CN216161694U - Preparation device of IC carrier plate and IC carrier plate - Google Patents
Preparation device of IC carrier plate and IC carrier plate Download PDFInfo
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- CN216161694U CN216161694U CN202120812983.4U CN202120812983U CN216161694U CN 216161694 U CN216161694 U CN 216161694U CN 202120812983 U CN202120812983 U CN 202120812983U CN 216161694 U CN216161694 U CN 216161694U
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Abstract
The preparation device of the IC carrier plate comprises a first pressure head assembly, wherein the first pressure head assembly comprises a first substrate, a first pressure head arranged on the first substrate and a first pressure surface arranged at one end, far away from the first substrate, of the first pressure head, and the roughness Ra of the first pressure surface is 0.2-0.5 mu m. The preparation device of the IC carrier plate provided by the utility model has the advantages of simple structure, convenience in use and low cost, the end surface of the pressure head is set into the rough first pressure surface, the tin balls on the IC carrier plate are pressed by adopting the rough first pressure surface, the surface roughness of the formed tin ball pad is high, the bonding strength is high during the subsequent welding with Die, the welding stability is better, and the yield of packaged products is favorably improved. The utility model also provides an IC carrier plate.
Description
Technical Field
The utility model relates to the technical field of IC carrier plate preparation, in particular to a preparation device of an IC carrier plate and the IC carrier plate.
Background
In order to make the combination of solder balls and Die more stable and to improve the yield of packaged products, the solder balls printed on the IC carrier plate need to be flattened to make each solder ball become a solder ball pad, thereby facilitating the subsequent soldering with Die.
However, the surface of the conventional solder ball flattening device is a mirror surface, so that the surface roughness of the pressed solder ball pad is low, and the bonding strength and the welding stability are low during subsequent welding with Die, thereby reducing the yield of packaged products.
SUMMERY OF THE UTILITY MODEL
In view of the above, in order to overcome at least one of the above drawbacks, it is necessary to provide an apparatus for preparing an IC carrier.
The IC carrier plate manufactured by the preparation device of the IC carrier plate is also necessary to be provided.
The utility model provides a preparation device of an IC carrier plate, which comprises a first pressure head assembly, wherein the first pressure head assembly comprises a first substrate, a first pressure head arranged on the first substrate and a first pressure surface arranged at one end of the first pressure head far away from the first substrate, and the roughness Ra of the first pressure surface is 0.2-0.5 mu m.
In an embodiment of the present application, the roughness Ra of the first press surface is 0.3 μm to 0.4 μm.
In the embodiment of the application, the first pressing surface and the first pressing head are of an integral structure.
In an embodiment of the present application, the first pressing surface includes a plurality of first recesses formed in the first pressing head and a first connecting portion connecting two adjacent first recesses.
In the embodiment of the application, the first pressure head is made of ceramic or metal.
In the embodiment of the application, the apparatus for preparing an IC carrier further comprises a second indenter assembly, the second indenter assembly comprises a second substrate, a second indenter disposed on the second substrate, and a second pressing surface disposed at one end of the second substrate and away from the second indenter, the second pressing surface is a mirror surface, or the roughness Ra of the second pressing surface is 0.2 μm to 0.5 μm.
The utility model also provides an IC carrier plate which is prepared by the preparation device of the IC carrier plate, the IC carrier plate comprises a circuit substrate and a welding pad arranged on at least one surface of the circuit substrate, the welding pad comprises a squeezing surface, and the roughness Ra of the squeezing surface is 0.2-0.5 mu m.
In the embodiment of the present application, the roughness Ra of the extrusion surface is 0.3 to 0.4. mu.m.
In an embodiment of the present application, the pressing surface includes a plurality of second recesses and a second connection portion connecting two adjacent second recesses, the second recesses have the same shape as the first connection portion, and the second connection portion has the same shape as the first recesses.
In the embodiment of the present application, the bonding pad is a tin bonding pad.
Compared with the prior art, the preparation device of the IC carrier plate provided by the utility model has the advantages that the structure is simple, the use is convenient, the cost is low, the end face of the pressure head is set to be the rough first pressure surface, the rough first pressure surface is adopted to press the solder balls on the IC carrier plate, the surface roughness of the formed solder ball pad is high, the bonding strength is high during the subsequent welding with Die, the welding stability is better, and the yield of the packaged product is favorably improved.
Drawings
Fig. 1 is a schematic structural diagram of a first ram assembly according to an embodiment of the present invention.
Fig. 2 is a sectional view taken along line II-II in fig. 1.
Fig. 3 to 4 are schematic views illustrating a manufacturing process of the first ram assembly according to the present invention.
Fig. 5 and fig. 6 are schematic views illustrating a process of manufacturing an IC carrier by using an apparatus for manufacturing an IC carrier according to an embodiment of the present invention.
Fig. 7 and 8 are schematic views illustrating a process of preparing an IC carrier by an apparatus for preparing an IC carrier according to another embodiment of the present invention.
Fig. 9 and fig. 10 are schematic views illustrating a process of preparing an IC carrier by an apparatus for preparing an IC carrier according to another embodiment of the present invention.
Fig. 11 is a schematic structural diagram of an IC carrier according to the present invention.
Fig. 12 is a diagram of the IC carrier before the bumps are pressed.
FIG. 13 is a diagram of a bump on an IC carrier after being pressed to form a bonding pad according to the present invention.
Fig. 14 is a scanning electron micrograph of a bond pad prepared using a conventional indenter assembly.
FIG. 15 is a scanning electron micrograph of a bonding pad on an IC carrier according to the present invention.
Description of the main elements
The following detailed description will further illustrate the utility model in conjunction with the above-described figures.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments.
Unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this invention belongs. The terminology used in the description of the utility model herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the utility model.
Some embodiments of the utility model are described in detail below with reference to the accompanying drawings. The embodiments described below and the features of the embodiments can be combined with each other without conflict.
Referring to fig. 1, fig. 5 and fig. 6, an embodiment of the present invention provides an apparatus 100 for manufacturing an IC carrier, the apparatus 100 includes a first pressing head assembly 10, the first pressing head assembly 10 includes a first substrate 1, a first pressing head 2 disposed on the first substrate 1, and a first pressing surface 3 disposed at an end of the first pressing head 2 away from the first substrate 1, and a roughness Ra of the first pressing surface 3 is 0.2 μm to 0.5 μm.
The first pressing surface 3 contacts with a bump 30 on an unformed IC carrier 300, the first pressing head assembly 10 is configured to press the bump 30, so that the bump 30 forms a bonding pad 40, the bonding pad 40 includes a pressing surface 41, and a surface roughness Ra of the pressing surface 41 is 0.2 μm to 0.5 μm.
Referring to fig. 1 again, the first substrate 1 includes a first surface 11 and a second surface 12 opposite to the first surface 11, and the first pressing head 2 is disposed on the first surface 11.
In the present embodiment, the material of the first substrate 1 may be ceramic, metal, or plastic.
In the present embodiment, the first substrate 1 is rectangular or circular.
Referring to fig. 1 and 2, and referring to fig. 3 and 4, the first pressing head 2 is protruded from the first surface 11 of the first substrate 1. The first ram 2 comprises a first end face (not shown) in contact with the first surface 11 and a second end face 21, on which the first pressing face 3 is arranged.
In the present embodiment, the first indenter 2 and the first substrate 1 may be made of the same material or different materials.
In this embodiment, the first indenter 2 and the first substrate 1 may be formed integrally.
In another embodiment, the first pressing head 2 and the first substrate 1 may be bonded together by gluing.
Referring to fig. 2 again, the first pressing surface 3 is an uneven surface, and specifically includes a plurality of first recesses 31 and a first connecting portion 32 connecting two adjacent first recesses 31. The first pressing surface 3 and the first pressing head 2 may be of an integral structure, or may be formed separately and then assembled together.
In the present embodiment, the first pressing surface 3 and the first ram 2 are formed integrally.
Referring to fig. 1, 3 and 4, in the present embodiment, the first pressing surface 3 is formed directly on the second end surface 21 and has an uneven structure. Specifically, the structure of the first pressing surface 3 is formed by performing sand blasting on the second end surface 21 of the first pressing head 2 through a sand blasting process, wherein the abrasive used in the sand blasting process may be steel sand, alumina, quartz sand, silicon carbide, or the like. The second end face 21 is formed into the above-described rugged structure by the sand blast process, thereby constituting the first pressed face 3 to improve the surface roughness of the first pressed face 3.
In another embodiment, the first pressing surface 3 may be formed directly on the second end surface 21 by etching, and the second end surface 21 may be formed with the above-mentioned rugged structure by etching, so as to form the first pressing surface 3, thereby improving the surface roughness of the first pressing surface 3.
It will be appreciated that other embodiments may be used to form the first pressing surface 3, for example, the first pressing surface 3 may be formed by the above-mentioned sand blasting process or etching process and then attached to the second end surface 21.
In the present embodiment, the roughness Ra of the first press surface 3 is preferably 0.3 μm to 0.4 μm.
Referring to fig. 5 and 10 in combination with fig. 12 to 15, the first pressing surface 3 is designed to have an uneven structure, so as to increase the surface roughness thereof, and can be used for pressing the bump 30 on the circuit substrate 20 to form a rough pressing surface 41 on the bump 30, the bump 30 can be a tin solder ball, and the pressed tin solder ball forms a tin solder pad, wherein the rough pressing surface 41 is a surface of the tin solder pad for soldering, and the rough soldering surface facilitates subsequent soldering with Die, thereby increasing the bonding strength between the IC carrier and Die, and further increasing the yield of the packaged product.
Referring to fig. 7 to 10, in another embodiment, the apparatus 200 for manufacturing an IC carrier further includes a second pressing head assembly 50, the second pressing head assembly 50 and the first pressing head assembly 10 are respectively located at two opposite sides of the circuit substrate 20, the second pressing head assembly 50 includes a second substrate 51, a second pressing head 52 disposed on the second substrate 51, and a second pressing surface 53 disposed at an end of the second pressing head 52 away from the second substrate 51, the second pressing surface 53 is a mirror surface, or a roughness Ra of the second pressing surface 53 is 0.2 μm to 0.5 μm, and the roughness Ra is preferably 0.3 μm to 0.4 μm.
The structure of the device for preparing the IC carrier can be designed according to the distribution of the bumps 30 on the circuit substrate 20, and specifically, there are the following three embodiments.
Referring to fig. 5 and fig. 6, in the first embodiment, the single surface of the IC carrier 300 before molding is provided with the bump 30, the IC carrier manufacturing apparatus 100 only includes the first pressing head assembly 10, during the specific pressing process, only the circuit substrate 20 needs to be placed on a platform, the IC carrier manufacturing apparatus 100 is placed on one side of the bump 30, the IC carrier manufacturing apparatus 100 moves along the arrow direction in fig. 5, the bump 30 is pressed by the first pressing surface 3 to form the bump 30 into the pad 40, and the surface of the pad 40 facing the first pressing surface 3 forms the rough pressing surface 41, so as to obtain the IC carrier 300.
Referring to fig. 7 and 8, in a second embodiment, a bump 30 is disposed on a single surface of the IC carrier 300 before molding, and the apparatus 200 for manufacturing an IC carrier includes a first pressing head assembly 10 and a second pressing head assembly 50, where the second pressing surface 53 of the second pressing head assembly 50 is a mirror surface. In the specific pressing process, a surface of the circuit substrate 20 without the bump 30 is placed on the second pressing surface 53 toward the second pressing assembly 50, the first pressing assembly 10 is disposed on a side of the circuit substrate 20 where the bump 30 is disposed, the first pressing assembly 10 in the IC carrier manufacturing apparatus 200 moves in the direction of the arrow in fig. 7, the first pressing assembly 10 and the second pressing assembly 50 press together, so that the first pressing surface 3 presses the bump 30 to form a bonding pad 40, and the surface of the bonding pad 40 facing the first pressing surface 3 forms a rough pressing surface 41, thereby obtaining the IC carrier 300.
Referring to fig. 9 and 10, in the third embodiment, the opposite surfaces of the IC carrier 400 are provided with bumps 30 before molding, the apparatus 200 for manufacturing an IC carrier includes a first pressing head assembly 10 and a second pressing head assembly 50, and at this time, the second pressing surface 53 of the second pressing head assembly 50 is a rough surface. In the specific pressing process, the first pressing head assembly 10 and the second pressing head assembly 50 are respectively disposed on two sides of the circuit substrate 20, and the first pressing surface 3 presses the bump 30 on one side of the circuit substrate 20 and the second pressing surface 53 presses the bump 30 on the other side of the circuit substrate 20 by moving the first pressing head assembly 10 and the second pressing head assembly 50 in the direction of the arrow in fig. 9, so that the bumps 30 on two sides of the circuit substrate 20 both form the bonding pads 40, and the surfaces of the bonding pads 40 on two sides of the circuit substrate 20 facing the first pressing surface 3 and the second pressing surface 53 both form the rough pressing surface 41, thereby obtaining the IC carrier 400.
Referring to fig. 3 and fig. 4, the manufacturing method of the IC carrier manufacturing apparatus 100 provided by the present invention includes: firstly, a whole raw material plate 60 (such as silicon nitride ceramic or tungsten steel) is subjected to CNC cutting forming to form a first substrate 1 and a first pressure head 2; grinding and flattening the end face of the first pressure head 2 far away from the first substrate 1 to form a second end face 21; the second end face 21 is sandblasted to form the first pressed face 3, wherein the roughness Ra of the first pressed face 3 is 0.2 to 0.5 μm, preferably 0.3 to 0.4 μm. The abrasive used in the sand blasting process is carborundum, and the grain diameter of the carborundum is 0.1-0.6 mu m.
Referring to fig. 6, 8, 10 and 11, the present invention further provides an IC carrier (300, 400), the IC carrier (300, 400) is prepared by the apparatus (100, 200) for preparing an IC carrier, the IC carrier (300, 400) includes a circuit substrate 20 and a bonding pad 40 disposed on at least one surface of the circuit substrate 20, the bonding pad 40 includes a pressing surface 41, and a roughness Ra of the pressing surface 41 is 0.2 μm to 0.5 μm.
In the present embodiment, the roughness Ra of the pressing surface 41 is 0.3 μm to 0.4 μm.
Referring to fig. 11 and fig. 2, in the present embodiment, the surface of the pressing surface 41 includes a plurality of second recesses 411 and a second connection portion 412 connecting two adjacent second recesses 411, the shapes of the second recesses 411 and the first connection portion 32 are the same, and the shapes of the second connection portion 412 and the first recess 31 are the same. Specifically, during the molding process, the first connection portion 32 of the first pressing surface 3 presses against the surface of the bump 30 to form the second recess 411, and the bump 30 is pressed to partially enter the first recess 31 to form the second connection portion 412.
In this embodiment, the bonding pad 40 is a solder pad.
Compared with the prior art, the preparation device of the IC carrier plate provided by the utility model has the advantages that the structure is simple, the use is convenient, the cost is low, the end face of the pressure head is set to be the rough first pressure surface, the rough first pressure surface is adopted to press the solder balls on the IC carrier plate, the surface roughness of the formed solder ball pad is high, the bonding strength is high during the subsequent welding with Die, the welding stability is better, and the yield of the packaged product is favorably improved.
Claims (9)
1. The preparation device of the IC carrier plate is characterized by comprising a first pressure head assembly, wherein the first pressure head assembly comprises a first substrate, a first pressure head arranged on the first substrate and a first pressure surface arranged at one end, far away from the first substrate, of the first pressure head, and the roughness Ra of the first pressure surface is 0.2-0.5 mu m.
2. The apparatus of claim 1, wherein the first pressing surface has a roughness Ra of 0.3 μm to 0.4 μm.
3. The apparatus of claim 1, wherein the first pressing surface and the first pressing head are of a unitary structure.
4. The apparatus of claim 3, wherein the first pressing surface comprises a plurality of first concave recesses formed on the first pressing head and a first connecting portion connecting two adjacent first concave recesses.
5. The apparatus of claim 1, wherein the first ram is made of ceramic or metal.
6. The apparatus of claim 1, further comprising a second indenter assembly, wherein the second indenter assembly comprises a second substrate, a second indenter disposed on the second substrate, and a second pressing surface disposed at an end of the second indenter away from the second substrate, the second pressing surface is a mirror surface, or the roughness Ra of the second pressing surface is 0.2 μm to 0.5 μm.
7. An IC carrier, characterized in that the IC carrier is prepared by the apparatus for preparing an IC carrier according to any one of claims 1-6, the IC carrier comprises a circuit substrate and a bonding pad disposed on at least one surface of the circuit substrate, the bonding pad comprises a pressing surface, and the roughness Ra of the pressing surface is 0.2 μm-0.5 μm.
8. The IC carrier according to claim 7, wherein the extrusion surface has a roughness Ra of 0.3 μm to 0.4 μm.
9. The IC carrier of claim 7, wherein the bonding pads are tin bonding pads.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202120812983.4U CN216161694U (en) | 2021-04-20 | 2021-04-20 | Preparation device of IC carrier plate and IC carrier plate |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202120812983.4U CN216161694U (en) | 2021-04-20 | 2021-04-20 | Preparation device of IC carrier plate and IC carrier plate |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN216161694U true CN216161694U (en) | 2022-04-01 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202120812983.4U Active CN216161694U (en) | 2021-04-20 | 2021-04-20 | Preparation device of IC carrier plate and IC carrier plate |
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| Country | Link |
|---|---|
| CN (1) | CN216161694U (en) |
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2021
- 2021-04-20 CN CN202120812983.4U patent/CN216161694U/en active Active
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