CN215418531U - Substrate integrated waveguide band-pass filter with EBG structure - Google Patents
Substrate integrated waveguide band-pass filter with EBG structure Download PDFInfo
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- CN215418531U CN215418531U CN202121027759.0U CN202121027759U CN215418531U CN 215418531 U CN215418531 U CN 215418531U CN 202121027759 U CN202121027759 U CN 202121027759U CN 215418531 U CN215418531 U CN 215418531U
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Abstract
The utility model discloses a substrate integrated waveguide band-pass filter added with an EBG structure, which belongs to the technical field of microwave radio frequency and comprises a first metal layer, a medium substrate layer and a second metal layer which are sequentially stacked from top to bottom; the first metal layer comprises two one-eighth substrate integrated waveguide metal layers, four electromagnetic gap coupling structures, a coplanar waveguide input end and a coplanar waveguide output end; an eighth substrate integrated waveguide metal layer is adopted, the physical size is one eighth of that of a common substrate integrated waveguide structure, and miniaturization is easy; compared with structures such as microstrip lines and suspension lines, the structure has the advantages of higher Q value, higher integration level, better selectivity and lower loss; the performance of the filter is improved by adding the electromagnetic gap coupling structure between the coplanar waveguide input end and the coplanar waveguide output end of the substrate integrated waveguide filter, and the filter has better signal selectivity and lower loss.
Description
Technical Field
The utility model belongs to the technical field of microwave radio frequency, and relates to a substrate integrated waveguide band-pass filter added with an EBG structure.
Background
With the rapid development of modern wireless communication technology, the key technology of mobile communication is mainly embodied in two aspects of wireless transmission technology and wireless network technology, and the wireless transmission technology relates to technologies such as large-scale MIMO, multi-carrier based on filter banks, full duplex and the like. The filter is an important device in a radio frequency system, and plays a vital role in a transmitting end, a relay station and a receiving end. With the development of communication technology, there are more urgent needs for the speed of information transmission and carrying larger information amount, the frequency resources are increasingly tense, and the development and utilization of higher frequency bands are increasingly required. Microwave filters have become important components in communication systems as passive devices for separating useful signals from unwanted signals, and their performance directly affects the quality of the whole communication system, and while electronic systems are being miniaturized and lightened, the number of filters is greatly increased, and higher requirements are also made on the performance of the filters (including but not limited to integration level and reliability).
The microwave radio frequency filter is currently applied to the fields of microwave and millimeter wave communication, microwave navigation, guidance, remote measurement and control, satellite communication, military electronic countermeasure and the like, and the performance of the microwave radio frequency filter directly influences the quality of the whole communication system. Commonly used microwave rf filter structures include microstrip line structures, suspended line structures, substrate integrated waveguide Structures (SIW), and the like. With the development of technology, microwave rf filters are developed toward miniaturization, planarization, light weight, and high integration. Compared with other structures, the substrate integrated waveguide structure can better meet the requirements on the performance of the filter: high Q value, high integration, high selectivity, low loss, low cost, etc. And the substrate integrated waveguide structure is equally divided along the transverse direction, the longitudinal direction and the diagonal direction, and the obtained eighth substrate integrated waveguide metal layer is more miniaturized under the condition of the same performance.
The substrate integrated waveguide filter realizes the filtering function through the coupling action between the substrate integrated waveguide resonant cavities, and has the defects of out-of-band rejection and poor signal selectivity of the filter.
SUMMERY OF THE UTILITY MODEL
The utility model aims to: the substrate integrated waveguide band-pass filter with the EBG structure is provided, the electromagnetic gap coupling structures are added on two sides of the input microstrip line and the output microstrip line, the performance of the filter is improved, the signal selectivity is better, and the loss is lower.
The technical scheme adopted by the utility model is as follows:
a substrate integrated waveguide band-pass filter added with an EBG structure comprises a first metal layer, a medium substrate layer and a second metal layer which are sequentially stacked from top to bottom; the first metal layer comprises two one-eighth substrate integrated waveguide metal layers, four electromagnetic gap coupling structures, a coplanar waveguide input end and a coplanar waveguide output end;
the metalized through hole rows on the two eighth substrate integrated waveguide metal layers are positioned on the same horizontal plane and are parallel to each other, the two metalized through hole rows penetrate through the medium substrate layer and are communicated with the second metal layer, one eighth substrate integrated waveguide metal layer, the metalized through hole rows and the second metal layer form a resonant cavity, and the two resonant cavities are mutually coupled through a gap between the two eighth substrate integrated waveguide metal layers;
the outer side of one eighth substrate integrated waveguide metal layer is connected with the coplanar waveguide input end, the outer side of the other eighth substrate integrated waveguide metal layer is connected with the coplanar waveguide output end, and two sides of the coplanar waveguide input end and the coplanar waveguide output end are respectively provided with two electromagnetic gap coupling structures; the electromagnetic gap coupling structure is T-shaped, the top of the electromagnetic gap coupling structure is parallel to the coplanar waveguide input end and the coplanar waveguide output end, and the bottom of the electromagnetic gap coupling structure penetrates through the medium substrate layer through the metal through hole and is communicated with the second metal layer;
the second metal layer is rectangular, the length of the long side of the second metal layer is the same as that of the medium substrate layer, and the width of the second metal layer is the same as that of the two eighth substrate integrated waveguide metal layers after splicing.
Further, the coupling mode of the two resonant cavities is inductive coupling.
Further, the coupling strength of the two resonant cavities is adjusted by adjusting the size of the gap between the two eighth substrate integrated waveguide metal layers.
Further, the transmission zero point and out-of-band rejection are adjusted by adjusting the physical size and position of the coplanar waveguide input end or/and the electromagnetic gap coupling structure on both sides of the coplanar waveguide output end.
In summary, due to the adoption of the technical scheme, the utility model has the beneficial effects that:
the substrate integrated waveguide band-pass filter added with the EBG structure adopts one eighth substrate integrated waveguide metal layer, the physical size is one eighth of that of a common substrate integrated waveguide structure, and the substrate integrated waveguide band-pass filter is easy to miniaturize; compared with structures such as microstrip lines and suspension lines, the structure has the advantages of higher Q value, higher integration level, better selectivity and lower loss; the performance of the filter is improved by adding the electromagnetic gap coupling structure between the coplanar waveguide input end and the coplanar waveguide output end of the substrate integrated waveguide filter, and the filter has better signal selectivity and lower loss.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings that are required to be used in the embodiments will be briefly described below, it should be understood that the following drawings only illustrate some embodiments of the present invention and therefore should not be considered as limiting the scope, and that for those skilled in the art, other relevant drawings can be obtained according to the drawings without inventive effort, wherein:
FIG. 1 is a schematic structural view of the present invention;
FIG. 2 is a cross-sectional view of the present invention;
FIG. 3 is a top view of a first metal layer of an embodiment;
fig. 4 is a top view of a media substrate layer of an embodiment;
FIG. 5 is a top view of a second metal layer of an embodiment;
FIG. 6 is a graph of the transmission characteristics of an embodiment;
reference numerals: 11-a first metal layer, 12-an eighth substrate integrated waveguide metal layer, 13-an electromagnetic gap coupling structure, 14-a coplanar waveguide input end, 15-a coplanar waveguide output end, 21-a dielectric substrate layer, 22-a metal through hole row, 23-a metal through hole and 31-a third metal layer.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention is described in further detail below with reference to the accompanying drawings and embodiments. It should be understood that the detailed description and specific examples, while indicating the preferred embodiment of the utility model, are intended for purposes of illustration only and are not intended to limit the scope of the utility model. The components of embodiments of the present invention generally described and illustrated in the figures herein may be arranged and designed in a wide variety of different configurations.
Thus, the following detailed description of the embodiments of the present invention, presented in the figures, is not intended to limit the scope of the utility model, as claimed, but is merely representative of selected embodiments of the utility model. All other embodiments, which can be derived by a person skilled in the art from the embodiments of the present invention without making any creative effort, shall fall within the protection scope of the present invention.
It is noted that relational terms such as "first" and "second," and the like, may be used solely to distinguish one entity or action from another entity or action without necessarily requiring or implying any actual such relationship or order between such entities or actions. Also, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or apparatus. Without further limitation, an element defined by the phrase "comprising an … …" does not exclude the presence of other identical elements in a process, method, article, or apparatus that comprises the element.
Examples
As shown in fig. 1, fig. 2, fig. 3, fig. 4 and fig. 5, the substrate integrated waveguide bandpass filter with an added EBG structure provided by the present invention includes a first metal layer 11, a dielectric substrate layer 21 and a second metal layer, which are sequentially stacked from top to bottom; the first metal layer 11 comprises two one-eighth substrate integrated waveguide metal layers 12, four electromagnetic gap coupling structures 13, a coplanar waveguide input end 14 and a coplanar waveguide output end 15;
the metallization through hole rows on the two eighth substrate integrated waveguide metal layers 12 are positioned on the same horizontal plane and are parallel to each other, the two metallization through hole rows penetrate through the medium substrate layer 21 and are communicated with the second metal layer, one eighth substrate integrated waveguide metal layer 12, the metallization through hole rows and the second metal layer form a resonant cavity, and the two resonant cavities are coupled with each other through a gap between the two eighth substrate integrated waveguide metal layers 12;
the coupling mode of the two resonant cavities is inductive coupling, and the coupling strength of the two resonant cavities is adjusted by adjusting the size of the gap between the two eighth substrate integrated waveguide metal layers 12.
The outer side of one eighth substrate integrated waveguide metal layer 12 is connected with a coplanar waveguide input end 14, the outer side of the other eighth substrate integrated waveguide metal layer 12 is connected with a coplanar waveguide output end 15, and two sides of the coplanar waveguide input end 14 and the coplanar waveguide output end 15 are respectively provided with two electromagnetic gap coupling structures 13; the electromagnetic gap coupling structure 13 is T-shaped, the top of the electromagnetic gap coupling structure is parallel to the coplanar waveguide input end 14 and the coplanar waveguide output end 15, and the bottom of the electromagnetic gap coupling structure penetrates through the medium substrate layer 21 through a metal through hole 23 and is communicated with a second metal layer;
adjusting transmission zero and out-of-band rejection by adjusting the physical size and position of the electromagnetic gap coupling structure 13 at the two sides of the coplanar waveguide input end 14 or/and the coplanar waveguide output end 15;
in implementation, the change of the electromagnetic gap coupling strength is realized by adjusting the gap size from the electromagnetic gap coupling structure 13 to the coplanar waveguide input end 14 or the coplanar waveguide output end 15; the change of the position of the transmission zero point of the filter is realized by adjusting the size of the electromagnetic gap coupling structure 13.
The second metal layer is rectangular, the length of the long side of the second metal layer is the same as that of the dielectric substrate layer 21, and the width of the second metal layer is the same as that of the two eighth substrate integrated waveguide metal layers 12 after butt splicing.
In this embodiment, the first metal layer 11 and the second metal layer are made of metal silver, and the thickness is 0.01 mm. The dielectric constant of the dielectric substrate material is 7.8, the loss factor is 0.002, and the thickness is 0.05 mm. The diameter of the metalized through holes of the metalized through hole row forming the resonant cavity is 0.1mm, the hole spacing of the adjacent metalized through holes in the same row is 0.188mm, the gap size of the two resonant cavities in the same layer is 0.048mm, the diameter of the metal through hole 23 forming the electromagnetic gap coupling structure 13 is 0.04mm, the widths of the coplanar waveguide input end 14 and the coplanar waveguide output end 15 are both 0.05mm, the length of the second metal layer is 4.364mm, and the width is 1.416 mm. Fig. 6 shows the transmission characteristics of the embodiment.
In summary, one eighth of the substrate integrated waveguide metal layer is adopted, the physical size is one eighth of that of a common substrate integrated waveguide structure, and miniaturization is easy; compared with structures such as microstrip lines and suspension lines, the structure has the advantages of higher Q value, higher integration level, better selectivity and lower loss; the performance of the filter is improved by adding the electromagnetic gap coupling structure between the coplanar waveguide input end and the coplanar waveguide output end of the substrate integrated waveguide filter, and the filter has better signal selectivity and lower loss.
The above description is only for the purpose of illustrating the preferred embodiments of the present invention and should not be taken as limiting the scope of the present invention, and any modifications, equivalents and improvements made by those skilled in the art within the spirit and principle of the present invention should be included in the scope of the present invention.
Claims (4)
1. A substrate integrated waveguide band-pass filter with an EBG structure is characterized in that: the dielectric substrate layer comprises a first metal layer, a dielectric substrate layer and a second metal layer which are sequentially stacked from top to bottom; the first metal layer comprises two one-eighth substrate integrated waveguide metal layers, four electromagnetic gap coupling structures, a coplanar waveguide input end and a coplanar waveguide output end;
the metalized through hole rows on the two eighth substrate integrated waveguide metal layers are positioned on the same horizontal plane and are parallel to each other, the two metalized through hole rows penetrate through the medium substrate layer and are communicated with the second metal layer, one eighth substrate integrated waveguide metal layer, the metalized through hole rows and the second metal layer form a resonant cavity, and the two resonant cavities are mutually coupled through a gap between the two eighth substrate integrated waveguide metal layers;
the outer side of one eighth substrate integrated waveguide metal layer is connected with the coplanar waveguide input end, the outer side of the other eighth substrate integrated waveguide metal layer is connected with the coplanar waveguide output end, and two sides of the coplanar waveguide input end and the coplanar waveguide output end are respectively provided with two electromagnetic gap coupling structures; the electromagnetic gap coupling structure is T-shaped, the top of the electromagnetic gap coupling structure is parallel to the coplanar waveguide input end and the coplanar waveguide output end, and the bottom of the electromagnetic gap coupling structure penetrates through the medium substrate layer through the metal through hole and is communicated with the second metal layer;
the second metal layer is rectangular, the length of the long side of the second metal layer is the same as that of the medium substrate layer, and the width of the second metal layer is the same as that of the two eighth substrate integrated waveguide metal layers after splicing.
2. The substrate integrated waveguide bandpass filter with the added EBG structure according to claim 1, wherein: the coupling mode of the two resonant cavities is inductive coupling.
3. The substrate integrated waveguide bandpass filter with the added EBG structure according to claim 1, wherein: and adjusting the coupling strength of the two resonant cavities by adjusting the size of the gap between the two eighth substrate integrated waveguide metal layers.
4. The substrate integrated waveguide bandpass filter with the added EBG structure according to claim 1, wherein: and adjusting transmission zero and out-of-band rejection by adjusting the physical size and position of the coplanar waveguide input end or/and the electromagnetic gap coupling structure on both sides of the coplanar waveguide output end.
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN113224484A (en) * | 2021-05-12 | 2021-08-06 | 成都灏众科技有限公司 | Substrate integrated waveguide band-pass filter with EBG structure |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113224484A (en) * | 2021-05-12 | 2021-08-06 | 成都灏众科技有限公司 | Substrate integrated waveguide band-pass filter with EBG structure |
| CN113224484B (en) * | 2021-05-12 | 2024-06-25 | 成都灏众科技有限公司 | Substrate integrated waveguide band-pass filter added with EBG structure |
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