CN215376360U - Parameter amplifying device - Google Patents
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- CN215376360U CN215376360U CN202121604545.5U CN202121604545U CN215376360U CN 215376360 U CN215376360 U CN 215376360U CN 202121604545 U CN202121604545 U CN 202121604545U CN 215376360 U CN215376360 U CN 215376360U
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Abstract
The utility model discloses a parametric amplification device, which comprises: a first coplanar waveguide transmission line on the package substrate; a second coplanar waveguide transmission line on the parametric amplification functional chip; and one end of the filter circuit is electrically connected with the first coplanar waveguide transmission line, the other end of the filter circuit is electrically connected with the second coplanar waveguide transmission line, the filter circuit is a Butterworth filter circuit, and the Butterworth filter circuit is at least of four orders. According to the utility model, by arranging the filter circuit, the signal to be amplified output by the quantum chip is input into the parametric amplification functional chip through the first coplanar waveguide transmission line and the filter circuit, the signal to be amplified output by the quantum chip is filtered by the filter circuit, and an interference signal contained in the signal to be amplified is filtered, so that the precision of the signal to be amplified is improved, and the precision of the signal amplified by the parametric amplification device is improved.
Description
Technical Field
The utility model belongs to the field of quantum computers, and particularly relates to a parameter amplifying device.
Background
In the field of quantum computing, in order to obtain an operation result of a quantum chip, an output signal of the quantum chip, that is, a qubit read signal, needs to be collected and analyzed, the qubit read signal is usually very weak, an amplifier needs to be added to an output line of the qubit read signal to improve signal strength, and a quantum parametric amplification device is usually adopted.
The signals to be amplified output by the quantum chip also comprise some interference signals, and after the signals are amplified by the parametric amplification device, the interference signals can be amplified, so that the signal precision after amplification is greatly reduced. The existing quantum parametric amplification device lacks the function of processing the interference signal.
SUMMERY OF THE UTILITY MODEL
The present invention provides a parametric amplifier with a filter circuit to overcome the disadvantages of the prior art.
An embodiment of the present application provides a parametric amplification apparatus, the parametric amplification apparatus is configured to process a signal to be amplified output by a quantum chip, the parametric amplification apparatus includes:
a first coplanar waveguide transmission line on the package substrate;
a second coplanar waveguide transmission line on the parametric amplification functional chip; and
and one end of the filter circuit is electrically connected with the first coplanar waveguide transmission line, and the other end of the filter circuit is electrically connected with the second coplanar waveguide transmission line.
The parametric amplification device as described above, wherein the filter circuit is a low pass filter circuit.
The parametric amplification device as described above, wherein the low-pass filter circuit is a butterworth filter circuit, and the butterworth filter circuit is of at least four orders.
The parametric amplification device as described above, wherein the filter circuit includes:
a first transmission element with a first equivalent inductance and a second transmission element with a first equivalent capacitance to ground, the first transmission element and the second transmission element being located on the package substrate, and the first transmission element being electrically connected to the first coplanar waveguide transmission line;
the bonding connecting part is positioned on the parametric amplification functional chip and is electrically connected with the second coplanar waveguide transmission line;
and the first transmission element, the second transmission element, the bonding connection line and the bonding connection part are electrically connected in sequence.
The parametric amplification device as described above, wherein the first transmission element and the second transmission element are both formed by coplanar waveguide transmission lines, and a width of the first transmission element is smaller than a width of the second transmission element, and a ground pitch of the first transmission element is larger than a ground pitch of the second transmission element.
The parametric amplification device as described above, wherein the second coplanar waveguide transmission line is an impedance transformation transmission line.
The parametric amplification device as described above, wherein the first coplanar waveguide transmission line and the second coplanar waveguide transmission line are superconducting coplanar waveguide transmission lines.
Another embodiment of the present invention provides a method for manufacturing a parameter amplifying device, including:
forming a first coplanar waveguide transmission line on the package substrate;
forming a second coplanar waveguide transmission line on the parametric amplification functional chip;
and forming a filter circuit, wherein one end of the filter circuit is electrically connected with the first coplanar waveguide transmission line, and the other end of the filter circuit is electrically connected with the second coplanar waveguide transmission line.
In the manufacturing method described above, the step of forming the filter circuit includes:
forming a first transmission element with a first equivalent inductance and a second transmission element with a first equivalent capacitance to ground on the packaging substrate, wherein the first transmission element is electrically connected with the first coplanar waveguide transmission line;
forming a bonding connecting part on the parametric amplification functional chip, wherein the bonding connecting part is electrically connected with the second coplanar waveguide transmission line;
forming a bonding wire to electrically connect the second transmission element and the bonding connection portion.
In the manufacturing method, the cut-off frequency of the filter circuit is greater than the frequency of the signal to be amplified.
Compared with the prior art, the utility model has the advantages that through the arrangement of the filter circuit, the signal to be amplified output by the quantum chip is input into the parametric amplification function chip through the first coplanar waveguide transmission line and the filter circuit, the signal to be amplified output by the quantum chip is filtered by the filter circuit, and the interference signal contained in the signal to be amplified is filtered, so that the precision of the signal to be amplified is improved, and the precision of the signal amplified by the parametric amplification device is improved.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, it is obvious that the drawings in the following description are only some embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to the drawings without creative efforts.
FIG. 1 is a schematic diagram of a prior art parametric amplification device;
FIG. 2 is a schematic diagram of a parametric amplification device according to an embodiment of the present invention;
FIG. 3 is an equivalent circuit diagram of the filter circuit of FIG. 2;
fig. 4 is an equivalent circuit diagram of a filter circuit in the parametric amplification device according to an embodiment of the present invention;
fig. 5 is an equivalent circuit diagram of a filter circuit in a parametric amplification device according to yet another embodiment of the present invention;
fig. 6 is an equivalent circuit diagram of a filter circuit in a parametric amplification device according to another embodiment of the present invention;
fig. 7 is an equivalent circuit diagram of a filter circuit in a parametric amplification device according to still another embodiment of the present invention.
Description of reference numerals: 1-a first coplanar waveguide transmission line; 2-a filter circuit; 3-a parametric amplification functional chip; 4-a package substrate; 5-a second coplanar waveguide transmission line;
21-a first transmission element; 22-a second transmission element; 23-a bonding wire; 24-bond connection.
Detailed Description
The embodiments described below with reference to the drawings are illustrative only and should not be construed as limiting the utility model.
To make the objects, technical solutions and advantages of the embodiments of the present application clearer, the embodiments of the present application will be described in detail below with reference to the accompanying drawings. However, it will be appreciated by those of ordinary skill in the art that in the examples of the present application, numerous technical details are set forth in order to provide a better understanding of the present application. However, the technical solution claimed in the present application can be implemented without these technical details and various changes and modifications based on the following embodiments. The following embodiments are divided for convenience of description, and should not constitute any limitation to the specific implementation manner of the present application, and the embodiments may be mutually incorporated and referred to without contradiction.
It should be noted that the terms "first," "second," and the like in the description and claims of this application and in the drawings described above are used for distinguishing between similar elements and not necessarily for describing a particular sequential or chronological order. It is to be understood that the data so used is interchangeable under appropriate circumstances such that the embodiments of the application described herein are capable of operation in sequences other than those illustrated or described herein. Furthermore, the terms "comprises," "comprising," and "having," and any variations thereof, are intended to cover a non-exclusive inclusion, such that a process, method, system, article, or apparatus that comprises a list of steps or elements is not necessarily limited to those steps or elements expressly listed, but may include other steps or elements not expressly listed or inherent to such process, method, article, or apparatus.
In addition, it will be understood that when a layer (or film), region, pattern, or structure is referred to as being "on" a substrate, layer (or film), region, and/or pattern, it can be directly on the other layer or substrate, and/or intervening layers may also be present. In addition, it will be understood that when a layer is referred to as being "under" another layer, it can be directly under the other layer, and/or one or more intervening layers may also be present. In addition, references to "on" and "under" layers may be made based on the drawings.
Fig. 1 is a schematic structural diagram of a parametric amplification device in the prior art.
The conventional parametric amplification device comprises a packaging substrate 4 and a parametric amplification functional chip 3 mounted on the packaging substrate 4, wherein a bonding connecting part 24 is arranged on the parametric amplification functional chip 3, the bonding connecting part 24 is electrically connected with the packaging substrate 4 through a bonding connecting wire 23, a signal to be amplified output by a quantum chip contains some interference signals, and when the parametric amplification device amplifies the signal to be amplified, the interference signals are also amplified along with the signal to be amplified, so that the amplified signal has low precision.
The bonding connection line 23 connecting the parametric amplification functional chip 3 and the package substrate 4 is usually a metal bonding wire, for example, the bonding connection line 23 is an aluminum wire bonding wire with a diameter of 25um, in the transmission line in the parametric amplification device, the bonding connection line 23 can be regarded as an element with equivalent inductance, the bonding connection portion 24 is usually made of an aluminum film, and the bonding connection portion 24 can be regarded as an element with equivalent capacitance to ground.
The embodiment of the utility model provides a parametric amplification device, which aims to solve the problems that in the prior art, the quantum parametric amplification device is lack of a function of processing an interference signal, and the amplified signal is low in precision.
With reference to fig. 2, an embodiment of the present invention provides a parametric amplification device, where the parametric amplification device is configured to process a signal to be amplified output by a quantum chip, and the parametric amplification device includes: the parametric amplification device comprises a first coplanar waveguide transmission line 1 positioned on a packaging substrate 4, wherein a signal connector is installed on a shell of the parametric amplification device, a signal to be amplified output by a quantum chip is input into the parametric amplification device through the signal connector, and the signal connector is electrically connected with the first coplanar waveguide transmission line 1;
the parametric amplification device further comprises a filter circuit 2, one end of the filter circuit 2 is electrically connected with the first coplanar waveguide transmission line 1, the other end of the filter circuit is electrically connected with the second coplanar waveguide transmission line 5, a signal to be amplified output by the quantum chip is transmitted to the first coplanar waveguide transmission line 1 through a signal connector, and then is transmitted to the second coplanar waveguide transmission line 5 on the parametric amplification functional chip 3 through the filter circuit 2, and the signal to be amplified output by the quantum chip is amplified by the parametric amplification functional chip 3.
In the embodiment of the present application, for example, the package substrate 4 may be a PCB or a ceramic substrate.
In the working process of the parametric amplification device, an output signal of a quantum chip sequentially passes through the first coplanar waveguide transmission line 1, the filter circuit 2 and the second coplanar waveguide transmission line 5 to be input into the parametric amplification functional chip 3, the filter circuit 2 is arranged in the parametric amplification device, a signal to be amplified output by the quantum chip is filtered by the filter circuit 2, and an interference signal contained in the signal to be amplified is filtered, so that the precision of the signal to be amplified is improved, the transmission performance of an internal circuit of the parametric amplification device is improved, and the precision of the signal amplified by the parametric amplification device is improved.
In the microwave field, the coplanar waveguide is three parallel metal thin film conducting strip layers prepared on the surface of a dielectric layer, wherein the conducting strip layer positioned in the center is used for transmitting microwave signals, the conducting strip layers on two sides are connected to a ground plane, the biggest difference with the general circuit is that the coplanar waveguide is a distributed circuit element, the capacitance/inductance/reactance/impedance of the distributed circuit element is uniformly distributed along the signal propagation direction of the coplanar waveguide, the coplanar waveguide propagates TEM waves, and signals can pass through the distributed circuit element almost without loss along the signal propagation direction; in addition, coplanar waveguides have no cutoff frequency, while common lumped circuits have cutoff frequencies. For a section of uniform coplanar waveguide, most microwave signals in the frequency range can be transmitted smoothly, and the section of uniform coplanar waveguide is called a transmission line, namely a coplanar waveguide transmission line.
In some embodiments of the present invention, the filter circuit 2 is a low-pass filter circuit 2, the cut-off frequency of the low-pass filter circuit 2 can be set according to actual use requirements, and the low-pass filter circuit 2 can filter interference signals doped in output signals of the quantum chip and higher than the cut-off frequency of the low-pass filter circuit 2, so as to improve the precision of signals to be amplified and improve the transmission performance of internal circuits of the parametric amplification device.
Illustratively, in a specific manner, the low-pass filter circuit 2 is a butterworth filter circuit, and the butterworth filter circuit is at least of four orders, and the butterworth filter circuit has better passband stability and better passband-to-stopband attenuation steepness in the process of transmitting signals.
With reference to fig. 2 and fig. 3, in some embodiments of the present invention, the filter circuit 2 includes a first transmission element 21 having an equivalent inductance and a second transmission element 22 having an equivalent capacitance to ground, the first transmission element 21 and the second transmission element 22 are located on the package substrate 4, and the first transmission element 21 is electrically connected to the first coplanar waveguide transmission line 1; the filter circuit 2 further includes a bonding connection line 23 having a second equivalent inductance and a bonding connection portion 24 having a second equivalent capacitance with respect to ground, the bonding connection portion 24 is located on the parametric amplification functional chip 3 and electrically connected to the second coplanar waveguide transmission line 5, and the first transmission element 21, the second transmission element 22, the bonding connection line 23, and the bonding connection portion 24 are electrically connected in sequence. The equivalent circuit diagram of the filter circuit 2 is shown in fig. 3, the first transmission element 21 has an equivalent inductance L1, the second transmission element 22 has an equivalent capacitance C1 with respect to ground, the bonding wire 23 has an equivalent inductance L2, the bonding connection 24 has an equivalent capacitance C2 with respect to ground, the first end of the first transmission element 21 is electrically connected to the first coplanar waveguide transmission line 1, the second end of the first transmission element 21 is electrically connected to the second transmission element 22, the second transmission element 22 is electrically connected to the first end of the bonding wire 23, the second end of the bonding wire 23 is electrically connected to the bonding connection 24, and the bonding connection 24 is electrically connected to the second coplanar waveguide transmission line 5.
The first transmission element 21, the second transmission element 22, the bonding connection line 23 and the bonding connection part 24 are used for constructing a fourth-order Butterworth filter circuit, so that a transmission circuit in the parametric amplification device is optimized, in the transmission process of a signal to be amplified output by a quantum chip, the interference signal in the signal to be amplified is filtered by the fourth-order Butterworth filter circuit, in the embodiment, the bonding connection line 23 and the bonding connection part 24 with capacitance and inductance effects are used as elements in the fourth-order Butterworth filter, when the fourth-order Butterworth filter circuit is designed and constructed, the influence of the bonding connection line 23 and the bonding connection part 24 is considered, the bonding connection line 23 and the bonding connection part 24 are brought into the design optimization range, the bonding connection line 23 and the bonding connection part 24 become a part in the filter circuit 2, and by arranging the fourth-order Butterworth filter circuit, the transmission circuit in the parametric amplification device has better passband stability, and the attenuation gradient from the passband to the stopband is larger, so that the transmission performance of the line is improved.
It should be particularly noted that, in some embodiments of the present invention, the first transmission element 21 and the second transmission element 22 are both formed by coplanar waveguide transmission lines, and the width of the first transmission element 21 is smaller than the width of the second transmission element 22, and the ground distance of the first transmission element 21 is greater than the ground distance of the second transmission element 22. The first transmission element 21 and the second transmission element 22 are both formed by coplanar waveguide transmission lines formed on the package substrate 4, and the first coplanar waveguide transmission line 1 and the first transmission element 21 and the second transmission element 22 can be synchronously prepared and formed in the design and preparation process of the package substrate 4. The physical dimensions of the first transmission element and the second transmission element 22, that is, the widths and the ground-to-ground distances of the first transmission element and the second transmission element 22 determine the electrical parameters of the first transmission element and the second transmission element 22, and an implementer can determine the actual processing dimensions of the first transmission element and the second transmission element 22 according to the actual use requirements. Illustratively, in a specific way, the width of the first transmission element 21 is 0.08-0.14mm, the ground spacing of the first transmission element 21 is 1.05-1.11mm, the width of the second transmission element 22 is 1.98-2.04mm, and the ground spacing of the second transmission element 22 is 0.08-0.14 mm.
Fig. 4 is an equivalent circuit diagram of a filter circuit in a parametric amplification device according to an embodiment of the present invention, and fig. 5 is an equivalent circuit diagram of a filter circuit in a parametric amplification device according to another embodiment of the present invention.
In some embodiments of the present invention, as shown in fig. 4 and 5, the filter circuit 2 further includes at least one set of filter components disposed on the package substrate 4, and the filter components include a first filter element having an equivalent inductance and a second filter element having an equivalent capacitance to ground.
As shown in fig. 4, in some embodiments of the present invention, a set of filter assemblies is included, in which a first end of a first filter element is electrically connected to a second end of the first transmission element 21, a second end of the first filter element is electrically connected to a second filter element, and the second filter element is electrically connected to a signal input end of the bonding connection line 23, thereby constructing a sixth-order butterworth filter circuit.
As shown in fig. 5, in another embodiment of the present invention, the filter circuit includes two or more sets of filter components, and the filter components are connected in sequence and connected between the first transmission element 21 and the bonding connection line 23 in the filter circuit 2, so as to construct an eighth, tenth, and twelfth order butterworth filter circuit.
By arranging the filtering component in the filtering circuit 2, the filtering effect can be further improved, the stability of the passband of the filtering circuit 2 is improved, and the signal transmission characteristic of the filtering circuit 2 is improved.
It should be noted that, in some embodiments of the present invention, the first filtering element and the second filtering element are both formed by coplanar waveguide transmission lines, and in the design and manufacturing process of the package substrate 4, the first coplanar waveguide transmission line 1, the first transmission element 21, and the second transmission element 22 may be simultaneously manufactured and formed at the same time.
As shown in fig. 6 and 7, in some embodiments of the present invention, the filter circuit 2 further includes an auxiliary transmission element having an equivalent capacitance C0 with respect to ground, the auxiliary transmission element being electrically connected to the signal input terminal of the first transmission element 21, and the auxiliary transmission element being electrically connected to the first coplanar waveguide transmission line 1. The auxiliary transmission element is disposed on the package substrate 4.
The auxiliary transmission element with the equivalent capacitance to the ground is additionally arranged at the signal input end of the filter circuit 2, so that the filtering effect of the filter circuit 2 can be improved, and the line transmission characteristic of the filter circuit 2 is further improved.
It should be noted that, in some embodiments of the present invention, the auxiliary capacitive element is an element formed by a coplanar waveguide transmission line, and when the first coplanar waveguide transmission line 1, the first transmission element 21, and the second transmission element 22 are designed and prepared on the package substrate 4, the auxiliary transmission elements may be designed and prepared synchronously.
It should be noted that, in some embodiments of the present invention, the second coplanar waveguide transmission line 5 is an impedance transformation transmission line, so as to match the characteristic impedance of the internal circuit of the parametric amplification functional chip 3 with the characteristic impedance of the filter circuit 2, and optimize the transmission performance of the line.
It should be noted that, in some embodiments of the present invention, the first coplanar waveguide transmission line 1 and the second coplanar waveguide transmission line 5 are both superconducting coplanar waveguide transmission lines, so that the parametric amplification device provided by the present invention can operate in a superconducting environment and is adapted to a superconducting quantum chip.
The embodiment of the application provides a method for preparing a parameter amplifying device, which comprises the following steps:
forming a first coplanar waveguide transmission line 1 on a package substrate 4, wherein the package substrate 4 may be a PCB, and the first coplanar waveguide transmission line 1 is formed on the PCB, and the first coplanar waveguide transmission line 1 is made of a superconducting material, wherein the superconducting material is aluminum, and the aluminum has a superconducting property at a low temperature, such as in a dilution refrigerator;
forming a second coplanar waveguide transmission line 5 on the parametric amplification functional chip 3, illustratively, the parametric amplification functional chip 3 is a superconducting quantum parametric amplification functional chip, and the parametric amplification functional chip 3 is mounted on the package substrate 4;
and forming a filter circuit 2, wherein one end of the filter circuit 2 is electrically connected with the first coplanar waveguide transmission line 1, the other end of the filter circuit 2 is electrically connected with the second coplanar waveguide transmission line 5, one part of the filter circuit 2 is positioned on a packaging substrate 4, and the other part of the filter circuit 2 is positioned on a parametric amplification functional chip 3.
In some embodiments of the utility model, the step of forming the filter circuit 2 comprises:
forming a first transmission element 21 with a first equivalent inductance and a second transmission element 22 with a first equivalent capacitance to ground on the package substrate 4, wherein the first transmission element 21 is electrically connected with the first coplanar waveguide transmission line 1, and exemplarily, the first transmission element 21 and the second transmission element 22 are coplanar waveguide connection lines and are both made of superconducting materials, the width of the first transmission element 21 is 0.08-0.14mm, the ground distance of the first transmission element 21 is 1.05-1.11mm, the width of the second transmission element 22 is 1.98-2.04mm, and the ground distance of the second transmission element 22 is 0.08-0.14 mm;
forming a bonding connection part 24 on the parametric amplification functional chip 3, wherein the bonding connection part 24 is electrically connected with the second coplanar waveguide transmission line 5;
a bond wire 23 is formed to electrically connect the second transmission element 22 and the bond connection 24, the bond wire 23 being, for example, an aluminum wire bond wire with a diameter of 25 um.
A fourth-order Butterworth filter circuit is constructed by the first transmission element 21, the second transmission element 22, the bonding connecting line 23 and the bonding connecting portion 24, signals to be amplified output by the quantum chip can be filtered by the Butterworth filter circuit, accordingly, the transmission circuit in the quantum parameter amplifying device is optimized, the bonding connecting line 23 and the bonding connecting portion 24 are skillfully brought into an optimized range, and the transmission performance of a line is improved.
In some embodiments of the present invention, the step of forming the filter circuit 2 further comprises:
at least one group of filter assemblies is formed on the packaging substrate 4, each filter assembly comprises a first filter element with equivalent inductance and a second filter element with equivalent capacitance to the ground, and the first filter element and the second filter element are elements formed by coplanar waveguide transmission lines.
The equivalent circuit diagram of the filter circuit 2 is shown in fig. 4 and 5.
As shown in fig. 4, some embodiments of the present invention include a set of filter assemblies, in which one end of a first filter element is electrically connected to the second end of the first transmission element 21, the second end of the first filter element is connected to the first end of a second filter element, the second end of the second filter element is grounded, and the second end of the first filter element is electrically connected to the first end of the bonding connection line 23.
As shown in fig. 5, in another embodiment of the present invention, two or more sets of filter assemblies are included, and the filter assemblies are connected in sequence and connected between the first transmission element 21 and the bonding connection line 23 in the filter circuit 2.
By arranging the filtering component in the filtering circuit 2, the filtering effect can be further improved, the stability of the passband of the filtering circuit 2 is improved, and the signal transmission characteristic of the filtering circuit 2 is improved.
In some embodiments of the present invention, the step of forming the filter circuit 2 further comprises:
an auxiliary transmission element having an equivalent capacitance C0 is formed on the package substrate 4, and is formed of a coplanar waveguide transmission line, and is electrically connected to the signal input terminal of the first transmission element 21, and is also electrically connected to the first coplanar waveguide transmission line 1. The auxiliary transmission element is additionally arranged at the signal input end of the filter circuit 2, so that the filtering effect of the filter circuit 2 can be improved, and the signal transmission characteristic of the filter circuit 2 is further improved.
In some embodiments of the present invention, the cut-off frequency of the filter circuit 2 is greater than the frequency of the signal to be amplified, preventing the signal to be amplified from being filtered by the filter circuit 2.
Compared with the prior art, the parametric amplification device prepared by the preparation method in the embodiment of the application can operate in a superconducting environment, is adaptive to a superconducting quantum chip, can filter a signal to be amplified output by the superconducting quantum chip by forming the filter circuit 2 in the parametric amplification device and optimizing the line transmission characteristic in the parametric amplification device, and can remove interference signals mixed in the signal to be amplified, so that the precision of the signal to be amplified is improved, and the precision of the signal amplified by the parametric amplification device is further improved.
The construction, features and functions of the present invention are described in detail in the embodiments illustrated in the drawings, which are only preferred embodiments of the present invention, but the present invention is not limited by the drawings, and all equivalent embodiments modified or changed according to the idea of the present invention should fall within the protection scope of the present invention without departing from the spirit of the present invention covered by the description and the drawings.
Claims (7)
1. A parametric amplification device, wherein the parametric amplification device is configured to process a signal to be amplified output by a quantum chip, the parametric amplification device comprising:
a first coplanar waveguide transmission line (1) on the package substrate (4);
a second coplanar waveguide transmission line (5) on the parametric amplification functional chip (3); and
one end of the filter circuit (2) is electrically connected with the first coplanar waveguide transmission line (1), and the other end of the filter circuit (2) is electrically connected with the second coplanar waveguide transmission line (5).
2. A parametric amplification device as claimed in claim 1, wherein the filter circuit (2) is a low pass filter circuit (2).
3. Parametric amplification device as claimed in claim 2, wherein the low pass filter circuit (2) is a butterworth filter circuit (2) and the butterworth filter circuit (2) is of at least fourth order.
4. A parametric amplification device as claimed in any one of claims 1 to 3, wherein the filter circuit (2) comprises:
a first transmission element (21) with a first equivalent inductance and a second transmission element (22) with a first equivalent capacitance to ground, the first transmission element (21) and the second transmission element (22) being located on the package substrate (4), and the first transmission element (21) being electrically connected with the first coplanar waveguide transmission line (1);
the bonding connecting wire (23) is provided with a second equivalent inductor, the bonding connecting part (24) is provided with a second equivalent capacitor to the ground, and the bonding connecting part (24) is positioned on the parametric amplification functional chip (3) and is electrically connected with the second coplanar waveguide transmission line (5);
and the first transmission element (21), the second transmission element (22), the bonding connection line (23) and the bonding connection part (24) are electrically connected in sequence.
5. The parametric amplification device of claim 4, wherein the first transmission element (21) and the second transmission element (22) are formed by coplanar waveguide transmission lines, the width of the first transmission element (21) is smaller than that of the second transmission element (22), and the ground distance of the first transmission element (21) is larger than that of the second transmission element (22).
6. A parametric amplification device as in claim 1, wherein the second coplanar waveguide transmission line (5) is an impedance transformation transmission line.
7. A parametric amplification device as in claim 1, wherein the first coplanar waveguide transmission line (1) and the second coplanar waveguide transmission line (5) are superconducting coplanar waveguide transmission lines.
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| CN202121604545.5U CN215376360U (en) | 2021-07-13 | 2021-07-13 | Parameter amplifying device |
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| CN202121604545.5U CN215376360U (en) | 2021-07-13 | 2021-07-13 | Parameter amplifying device |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113505893A (en) * | 2021-07-13 | 2021-10-15 | 合肥本源量子计算科技有限责任公司 | Parameter amplifying device and preparation method thereof |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113505893A (en) * | 2021-07-13 | 2021-10-15 | 合肥本源量子计算科技有限责任公司 | Parameter amplifying device and preparation method thereof |
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