CN116826344A - Wide stop band absorption type filtering power divider - Google Patents
Wide stop band absorption type filtering power divider Download PDFInfo
- Publication number
- CN116826344A CN116826344A CN202310924661.2A CN202310924661A CN116826344A CN 116826344 A CN116826344 A CN 116826344A CN 202310924661 A CN202310924661 A CN 202310924661A CN 116826344 A CN116826344 A CN 116826344A
- Authority
- CN
- China
- Prior art keywords
- microstrip line
- line
- resistor
- coupling
- power divider
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000010521 absorption reaction Methods 0.000 title claims abstract description 73
- 238000001914 filtration Methods 0.000 title claims abstract description 26
- 239000002184 metal Substances 0.000 claims abstract description 42
- 238000002955 isolation Methods 0.000 claims abstract description 29
- 238000000034 method Methods 0.000 claims abstract description 17
- 230000002950 deficient Effects 0.000 claims abstract description 9
- 230000000694 effects Effects 0.000 claims abstract description 9
- 230000008878 coupling Effects 0.000 claims description 45
- 238000010168 coupling process Methods 0.000 claims description 45
- 238000005859 coupling reaction Methods 0.000 claims description 45
- 239000000758 substrate Substances 0.000 claims description 16
- 239000011229 interlayer Substances 0.000 claims description 13
- 230000005540 biological transmission Effects 0.000 claims description 11
- 239000010410 layer Substances 0.000 claims description 5
- 230000008859 change Effects 0.000 claims description 4
- 230000008569 process Effects 0.000 claims description 4
- 229910000831 Steel Inorganic materials 0.000 claims description 3
- 230000009471 action Effects 0.000 claims description 3
- 238000005452 bending Methods 0.000 claims description 3
- 239000010959 steel Substances 0.000 claims description 3
- 230000000149 penetrating effect Effects 0.000 claims description 2
- 238000004891 communication Methods 0.000 abstract description 8
- 230000004927 fusion Effects 0.000 abstract description 6
- 238000012545 processing Methods 0.000 abstract description 3
- 238000010586 diagram Methods 0.000 description 10
- 230000007547 defect Effects 0.000 description 6
- 238000013461 design Methods 0.000 description 6
- 230000010354 integration Effects 0.000 description 5
- 239000002131 composite material Substances 0.000 description 3
- 230000009977 dual effect Effects 0.000 description 3
- 230000004044 response Effects 0.000 description 3
- 238000004088 simulation Methods 0.000 description 3
- 230000001629 suppression Effects 0.000 description 2
- 101150005470 LCL2 gene Proteins 0.000 description 1
- 239000006096 absorbing agent Substances 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000005764 inhibitory process Effects 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 230000008054 signal transmission Effects 0.000 description 1
Landscapes
- Control Of Motors That Do Not Use Commutators (AREA)
Abstract
The invention relates to the technical field of microwave communication, in particular to a wide stop band absorption type filtering power divider. The invention consists of a first resistor R e1 A second microstrip line TL 2 A third microstrip line TL 3 Ground structure G 1 A second resistor R e2 A closed T-shaped network structure is formed, so that the high fusion of the isolation-absorption circuit is realized, and good absorption and isolation performances can be formed without loading additional absorption branches. The invention is realized by the method that the metal layer M is arranged at the bottom layer 2 The two pi-type defective structure groups are etched, so that the structure is simple and compact, the processing is easy, and the characteristic of a wide stop band is realized. The invention realizes the performance of the wide stop band absorption type filtering power divider, has simple and compact structure, is easy to integrate and miniaturize, and simultaneously realizes full-band absorption, high isolation, wide isolation range and good absorptionGood effects, high out-of-band rejection, good passband, and the like.
Description
Technical Field
The invention relates to the technical field of microwave communication, in particular to a wide stop band absorption type filtering power divider.
Background
In order to meet the demands of miniaturization and integration of wireless communication systems, functional fusion type filtering devices are widely focused and studied in recent years, such as a filtering power divider, and the functional fusion of the filter and the power divider is realized by improving the circuit structure utilization rate of two independent passive devices, namely the filter and the power divider, so that the size of a radio frequency front-end system is reduced, and the design integration level is improved. Meanwhile, reflected signals generated in the signal transmission process can cause interference to the operation of devices such as a mixer, an amplifier and the like in the radio frequency front-end system, so that the stability of the whole communication system is affected. The non-reflection filter successfully solves the problems, and the reflection signal is absorbed by using the resistor in the absorption circuit by introducing the reflection signal into the absorption circuit, so that the influence on the communication quality caused by the fact that the reflection signal enters a radio frequency front-end system is avoided. At present, the absorber circuit is applied to the filtering power divider, so that the design performance is further improved, and the method accords with the development of a communication system to the direction of multifunctional integration and high integration. The existing design method for realizing the absorption function of the absorption type filter power divider mainly comprises the steps of loading an absorption circuit on the input/output of the filter power divider, and consuming out-of-band reflection signals to realize the absorption function. However, the absorption circuit in such design has the problem of low absorption efficiency, and the isolation circuit is added, so that the whole circuit structure is complex, the integrated level of the whole circuit is low, the size is large, and the utilization rate of the circuit structure is low. In addition, the design is often low in stop band range, cannot inhibit adjacent frequency or harmonic waves, and is poor in anti-interference capability.
The existing absorption type filtering power divider has the problems that the functions of an absorption circuit and an isolation circuit are single, the fusion degree is low, the absorption performance is improved by the aid of an additional absorption circuit, the whole circuit structure is complex, the size is large, the utilization rate of the circuit structure is low, the integration degree is low, the rejection rate of a stop band is poor, the absorption performance is poor, the bandwidth of an isolation signal is narrow, the isolation degree is low and the like.
Therefore, the wide-impedance absorption type filtering power divider is designed, has high rejection and isolation, has a simple structure, and has important application value for improving the communication quality and the anti-interference capability of a wireless communication system.
Disclosure of Invention
The invention aims to solve the problems and provides a wide stop band absorption type filtering power divider. The invention constructs an absorption-isolation composite network and loads a defected ground group structure to realize dual performance of no reflection and isolation, expands the stop band bandwidth of the absorption type filtering power divider, has simple and compact structure, is easy to integrate and miniaturize, and simultaneously realizes excellent performances of full-band absorption, high isolation, wide isolation range, good absorption effect, high out-of-band rejection, good pass band and the like.
In order to achieve the aim of the invention, the technical scheme adopted by the invention is as follows:
a wide stop band absorption type filter power divider comprises a top metal structure M stacked from top to bottom 1 Intermediate dielectric substrate MS and bottom metal ground structure M 2 The method comprises the steps of carrying out a first treatment on the surface of the The interlayer dielectric substrate MS is provided with a pair of metal through holes VH in a penetrating way; the upper and lower ends of the metal through hole VH are respectively connected with the top metal structure M 1 Bottom metal ground structure M 2 Is connected with each other; the top metal structure M 1 Symmetrically arranged about a y-direction central axis; the top metal structure M 1 Includes a first microstrip line TL 1 To sixth microstrip line TL 6 First coupling structure CL 1 Second coupling structure CL 2 A first resistor R e1 A second resistor R e2 Ground structure G 1 The method comprises the steps of carrying out a first treatment on the surface of the The first coupling structure CL 1 Comprising parallel arranged first coupled lines CL 1 a and a second coupled line CL 1 b; the second coupling structure CL 2 Comprising third coupled lines CL arranged in parallel 2 a and fourth coupled line CL 2 b; the first microstrip line TL 1 Is connected with the first input port; the first micro-scaleStrip line TL 1 Is connected with the other end of the sixth microstrip line TL 6 Is connected with one end of the connecting rod; the sixth microstrip line TL 6 The other end of (a) is coupled with the second coupled line CL 1 b is connected with one end; the second coupled line CL 1 b and a second microstrip line TL 2 Is connected with one end of the connecting rod; second microstrip line TL 2 The other end of (a) is respectively connected with the first resistor R e1 Is a microstrip line TL 3 Is connected with one end of the connecting rod; the first resistor R e1 And the other end of the ground structure G 1 Is connected with one end of the connecting rod; the first coupling line CL 1 a is open at one end and connected with the third coupling line CL at the other end 2 One end of a is vertically connected to form an L-shaped structure; third coupled line CL 2 The other end of a is open; fourth coupled line CL 2 b has one end open circuit and the other end connected with the fifth microstrip line TL 5 One end of the connecting rod is vertically connected to form an L-shaped structure, and a chamfer is arranged at the connecting position; the fifth microstrip line TL 5 The other end of the first port is connected with the second port; the first coupling line CL 1 a and a third coupled line CL 2 a, a fourth microstrip line TL of a half-wavelength L shape is arranged at the right angle connection part of the a and the angular bisector 4 The method comprises the steps of carrying out a first treatment on the surface of the The fourth microstrip line TL 4 A chamfer is arranged at the bending part of the steel plate, and a gradual change structure is arranged at the right-angle joint part; the first microstrip line TL 1 To sixth microstrip line TL 6 First coupling structure CL 1 Second coupling structure CL 2 A first resistor R e1 Ground structure G 1 The second output port is symmetrically arranged about the y-direction central axis, and the third output port is symmetrically arranged about the y-direction central axis, so that a symmetrical circuit structure is formed; the second resistor R e2 Respectively with a second coupling line CL symmetrical about the y-direction central axis 1 The other end of b is connected; first resistor R symmetrical about central axis in y direction e1 A second microstrip line TL 2 A third microstrip line TL 3 Ground structure G 1 A second resistor R e2 Forming a closed T-shaped network structure; ground structure G 1 Is connected with the bottom metal ground structure M through the metal through hole VH 2 Is connected with each other.
Further asAccording to the preferred technical scheme of the invention, the bottom metal ground structure M 2 A first defected ground structure group and a second defected ground structure group which are symmetrical with respect to a central axis in the y direction are arranged on the surface in a hollowed-out manner; the first defected ground structure group and the second defected ground structure group comprise a plurality of pi-type defected ground structures DGS which are periodically arranged in the y direction; the pi-shaped defective ground structure DGS comprises a rectangular hollow structure and two symmetrical round hollow structures; the rectangular hollow structure is connected with the round hollow structure through a section of rectangular groove structure line.
Further, as a preferred embodiment of the present invention, when the microwave signal is fed from the input port one, the microwave signal passes through the first microstrip line TL 1 A pair of first coupling structures CL symmetrically distributed 1 The signal equal division transmission is completed, and the microwave signal passes through the first coupling structure CL 1 With a second coupling structure CL 2 The formed resonant structure forms a broadband band-pass filtering function; first coupling structure CL 1 With a second coupling structure CL 2 Half-wavelength fourth microstrip line TL with parallel connection at connection part 4 Two transmission zero points are respectively formed at two sides of the passband, and the generated filtered microwave signal passes through the fifth microstrip line TL 5 Respectively outputting through the second output port and the third output port to form an equal-power band-pass filtering signal output; the out-of-band microwave reflected signal enters a T-shaped network structure and is reflected by a first resistor R e1 Absorption, forming a non-reflective property of the signal; the crosstalk signals between the second output port and the third output port are respectively transmitted by the first resistor R through the T-shaped network structure e1 And a second resistor R e2 Absorbing to form an isolation property; the filtered power-division microwave signal passes through the fifth microstrip line TL 5 In the process of transmitting to the second output port and the third output port, the out-of-band signals of the high frequency band are restrained under the action of the low-pass effect of the first defected ground structure group (1) and the second defected ground structure group (2), so that the wide stop band performance is formed.
Further as a preferable technical solution of the present invention, the fourth microstrip line TL 4 Is L4 in length; wherein L4 and center frequency f 0 Relative dielectric constant ε of interlayer dielectric substrate MS r The relation between them is satisfied:
further as a preferable technical solution of the present invention, the third microstrip line TL 3 Is L3; wherein L3 and center frequency f 0 Relative dielectric constant ε of interlayer dielectric substrate MS r The relation between them is satisfied:
further as a preferable embodiment of the invention, the sixth microstrip line TL 6 Is L6; wherein L6 and center frequency f 0 Relative dielectric constant ε of interlayer dielectric substrate MS r The relation between them is satisfied:
compared with the prior art, the wide stop band absorption type filtering power divider provided by the invention has the following technical effects:
(1) The invention consists of a first resistor R e1 A second microstrip line TL 2 A third microstrip line TL 3 Ground structure G 1 A second resistor R e2 A closed T-shaped network structure is formed, so that the high fusion of the isolation-absorption circuit is realized, and good absorption and isolation performances can be formed without loading additional absorption branches.
(2) The invention is realized by the method that the metal layer M is arranged at the bottom layer 2 The two pi-type defective structure groups are etched, so that the structure is simple and compact, the processing is easy, and the characteristic of a wide stop band is realized.
(3) The invention realizes the performance of the wide stop band absorption type filtering power divider, has simple and compact structure, is easy to integrate and miniaturize, and simultaneously realizes the excellent performances of full-band absorption, high isolation, wide isolation range, good absorption effect, high out-of-band rejection, good passband and the like.
Drawings
FIG. 1 is a schematic diagram of the overall structure of a wide stop band absorption filter power divider according to an embodiment of the present invention;
FIG. 2 is a schematic diagram of a top metal structure of a wide stop band absorption filter power divider according to an embodiment of the present invention;
FIG. 3 is a schematic diagram of the structure of the bottom metal layer of the wide stop band absorption filter power divider according to an embodiment of the present invention;
FIG. 4 is a schematic diagram of a wide stop band absorption filter power divider according to an embodiment of the present invention;
FIG. 5 shows a top metal structure M of a wide stop band absorption filter power divider according to an embodiment of the present invention 1 A structural dimension schematic;
FIG. 6 shows a bottom metal structure M of a wide stop band absorption filter power divider according to an embodiment of the present invention 2 A structural dimension schematic;
FIG. 7 is a schematic diagram illustrating the side structure dimensions of a wide stop band absorption filter power divider according to an embodiment of the present invention;
FIG. 8 shows the transmission parameters S of a wide stop band absorption type filter power divider according to an embodiment of the present invention 21 And isolation coefficient S 32 A schematic diagram of a graph;
FIG. 9 shows the reflection coefficient S of the wide stop band absorption type filter power divider according to the embodiment of the invention 11 A simulation response diagram;
FIG. 10 shows an exemplary embodiment of an absorption filter power divider without pi-type defects and an exemplary embodiment S of the present invention 21 Comparing the curve schematic diagrams;
in the drawings, 1-a first defective structure group; 2-a second defective structural group.
Detailed Description
The invention is further explained in the following detailed description with reference to the drawings so that those skilled in the art can more fully understand the invention and can practice it, but the invention is explained below by way of example only and not by way of limitation.
As shown in FIGS. 1-3, a wide stop band absorption type filter power divider comprises a top metal structure M stacked from top to bottom 1 Intermediate dielectric substrate MS and bottom metal ground structure M 2 The method comprises the steps of carrying out a first treatment on the surface of the An interlayer dielectric substrate MS is penetrated with a pair of goldBelonging to the through-hole VH; the upper and lower ends of the metal through hole VH are respectively connected with the top metal structure M 1 Bottom metal ground structure M 2 Is connected with each other; top metal structure M 1 Symmetrically arranged about a y-direction central axis; top metal structure M 1 Includes a first microstrip line TL 1 To sixth microstrip line TL 6 First coupling structure CL 1 Second coupling structure CL 2 A first resistor R e1 A second resistor R e2 Ground structure G 1 The method comprises the steps of carrying out a first treatment on the surface of the First coupling structure CL 1 Comprising parallel arranged first coupled lines CL 1 a and a second coupled line CL 1 b; second coupling structure CL 2 Comprising third coupled lines CL arranged in parallel 2 a and fourth coupled line CL 2 b; first microstrip line TL 1 Is connected with the first input port; first microstrip line TL 1 Is connected with the other end of the sixth microstrip line TL 6 Is connected with one end of the connecting rod; sixth microstrip line TL 6 The other end of (a) is coupled with the second coupled line CL 1 b is connected with one end; second coupled line CL 1 b and a second microstrip line TL 2 Is connected with one end of the connecting rod; second microstrip line TL 2 The other end of (a) is respectively connected with the first resistor R e1 Is a microstrip line TL 3 Is connected with one end of the connecting rod; first resistor R e1 And the other end of the ground structure G 1 Is connected with one end of the connecting rod; first coupled line CL 1 a is open at one end and connected with the third coupling line CL at the other end 2 One end of a is vertically connected to form an L-shaped structure; third coupled line CL 2 The other end of a is open; fourth coupled line CL 2 b has one end open circuit and the other end connected with the fifth microstrip line TL 5 One end of the connecting rod is vertically connected to form an L-shaped structure, and a chamfer is arranged at the connecting position; fifth microstrip line TL 5 The other end of the first port is connected with the second port; first coupled line CL 1 a and a third coupled line CL 2 a, a fourth microstrip line TL of a half-wavelength L shape is arranged at the right angle connection part of the a and the angular bisector 4 The method comprises the steps of carrying out a first treatment on the surface of the Fourth microstrip line TL 4 A chamfer is arranged at the bending part of the steel plate, and a gradual change structure is arranged at the right-angle joint part; first microstrip line TL 1 To sixth microstrip line TL 6 First coupling structure CL 1 Second couplingStructure CL 2 A first resistor R e1 Ground structure G 1 The output ports II and III are symmetrically arranged about the central axis in the y direction, so that a symmetrical circuit structure is formed; second resistor R e2 Respectively with a second coupling line CL symmetrical about the y-direction central axis 1 The other end of b is connected; first resistor R symmetrical about central axis in y direction e1 A second microstrip line TL 2 A third microstrip line TL 3 Ground structure G 1 A second resistor R e2 Forming a closed T-shaped network structure; ground structure G 1 Is connected with the bottom metal ground structure M through the metal through hole VH 2 Is connected with each other.
Bottom metal ground structure M 2 A first defected ground structure group 1 and a second defected ground structure group 2 which are symmetrical with respect to a central axis in the y direction are arranged on the surface in a hollowed-out manner; the first defected ground structure group 1 and the second defected ground structure group 2 comprise a plurality of pi-type defected ground structures DGS which are periodically arranged in the y direction; the pi-shaped defective ground structure DGS comprises a rectangular hollow structure and two symmetrical round hollow structures; the rectangular hollow structure is connected with the round hollow structure through a section of rectangular groove structure line.
When a microwave signal is fed in from the input port, the microwave signal passes through the first microstrip line TL 1 A pair of first coupling structures CL symmetrically distributed 1 The signal equal division transmission is completed, and the microwave signal passes through the first coupling structure CL 1 With a second coupling structure CL 2 The formed resonant structure forms a broadband band-pass filtering function; first coupling structure CL 1 With a second coupling structure CL 2 Half-wavelength fourth microstrip line TL with parallel connection at connection part 4 Two transmission zero points are respectively formed at two sides of the passband, and the generated filtered microwave signal passes through the fifth microstrip line TL 5 Respectively outputting through the second output port and the third output port to form an equal-power band-pass filtering signal output; the out-of-band microwave reflected signal enters a T-shaped network structure and is reflected by a first resistor R e1 Absorption, forming a non-reflective property of the signal; the crosstalk signals between the second output port and the third output port are respectively transmitted by the first resistor R through the T-shaped network structure e1 And a second resistor R e2 Absorbing to form an isolation property; the filtered power-division microwave signal passes through the fifth microstrip line TL 5 In the process of transmitting to the second output port and the third output port, the out-of-band signals of the high frequency band are restrained under the action of the low-pass effect of the first defected ground structure group 1 and the second defected ground structure group 2, so that the wide stop band performance is formed.
Fig. 4 is a schematic diagram of a principle of a wide stop band absorption type filtering power divider, and it can be seen from fig. 4 that a microwave signal is evenly distributed from an input port one to a band-pass filter a, and is output to an output port two and an output port three through a low-pass filter C. The out-of-band reflected signal and the crosstalk signal between the output port two and the output port three form the dual performance of isolation of the in-band signal of the signal and absorption of the out-of-band reflected signal through the isolation-absorption composite network B.
The invention consists of a first resistor R e1 A second microstrip line TL 2 A third microstrip line TL 3 Ground structure G 1 A second resistor R e2 A closed T-shaped network structure is formed, so that the high fusion of the isolation-absorption circuit is realized, and good absorption and isolation performances can be formed without loading additional absorption branches. By underlying metallic ground structure M 2 The two groups of pi-type defected ground structures DGS are etched, so that the structure is simple and compact, the processing is easy, and the characteristic of a wide stop band is realized. The invention realizes the performance of the wide stop band absorption type filtering power divider, has simple and compact structure, is easy to integrate and miniaturize, and simultaneously realizes the excellent performances of full-band absorption, high isolation, wide isolation range, good absorption effect, high out-of-band rejection, good passband and the like.
FIG. 5 shows a top metal structure M of a wide stop band absorption filter power divider according to the present invention 1 Schematic structural dimensions. As shown in fig. 5, the first microstrip line TL 1 The line width of the line is w1, and the length is L1; first coupling structure CL 1 The line width of the line is wcl1, the length is Lcl1, and the interval is s1; second coupling structure CL 2 The line width of the line is wcl2, the length is Lcl2, and the interval is s2; fourth microstrip line TL 4 The line width of the line is w4, and the length is L4; fifth microstrip line TL 5 The line width of the line is w5, and the length is L5; first electricityR resistance e1 The resistance value of (2) is R1; second resistor R e2 The resistance value of (2) is R2; second microstrip line TL 2 The line width of the line is w2, and the length is L2; third microstrip line TL 3 The line width of the line is w3, and the length is L3; ground structure G 1 The pad size is Lp and the metal via VH radius is rh.
FIG. 6 shows a bottom metal ground structure M of a wide stop band absorption filter power divider according to the present invention 2 Schematic structural dimensions. As shown in fig. 6, the rectangular hollow structure of the pi-type defective structure DGS has a length Lc and a width wc; the radius of the circular hollow structure is rc, the length of the rectangular connecting groove of the rectangular hollow structure and the rectangular connecting groove of the circular hollow structure is Ld, and the width of the rectangular connecting groove is wd; the distance between two rectangular groove structures is Le, the distance between the pi-shaped defect ground structure DGS and the right end face is Lb, the distance between the pi-shaped defect ground structures DGS is Lj, and the distance between the lower end of the pi-shaped defect ground structure DGS and the central symmetry line is La.
FIG. 7 is a schematic diagram showing the side structure dimensions of a wide stop band absorption type filter power divider according to the present invention. The dielectric constant of the intermediate dielectric layer structure MS is epsilon r The thickness dimension is h.
Fourth microstrip line TL 4 Is L4 in length; wherein L4 and center frequency f 0 Relative dielectric constant ε of interlayer dielectric substrate MS r The relation between them is satisfied:
third microstrip line TL 3 Is L3; wherein L3 and center frequency f 0 Relative dielectric constant ε of interlayer dielectric substrate MS r The relation between them is satisfied:
sixth microstrip line TL 6 Is L6; wherein L6 and center frequency f 0 Relative dielectric constant ε of interlayer dielectric substrate MS r The relation between them is satisfied:
in particular, the invention provides a center frequency f 0 The specific size parameters of the wide stop band absorption type filtering power divider are as follows: first microstrip line TL 1 : l1=25.7mm, w1=3 mm; first coupling structure CL 1 : lcl1=23.6 mm, wcl1=0.6 mm, s1=0.16 mm; second coupling structure CL 2 : lcl2=23.4 mm, wcl2=0.85 mm, s2=0.16 mm; fourth microstrip line TL 4 : l4=46.4mm, w4=3.3 mm; second microstrip line TL 2 : l2=21.9mm, w2=0.23 mm; third microstrip line TL 3 : l3=45.1 mm, w3=0.31 mm; fifth microstrip line TL 5 : l5=51.5 mm, w5=3 mm; ground structure G 1 The length and the width are as follows: lp=1 mm; metal via radius VH: rh=0.3 mm; first resistor R e1 Resistance value: r1=91 Ω; second resistor R e2 Resistance value: r2=260 Ω; pi-type defective structure DGS: lc=12 mm, wc=4 mm, ld=5.5 mm, wd=0.52 mm, le=5 mm, rc=1.23 mm, la=31.4 mm, lb=3.1 mm, lj=4.6 mm; the interlayer dielectric substrate MS is made of RO4003C plate, the relative dielectric constant epsilon r is 3.55, and the thickness h is 1.524mm. The wide stop band absorption type filtering power divider of other frequency bands can be obtained by scaling in the embodiment.
FIG. 8 shows the transmission parameters S obtained by the simulation of the embodiment by establishing an actual 3D model with CST MWS three-dimensional simulation software 21 Reflection coefficient S 32 A frequency response curve. As can be seen from FIG. 8, the center frequency is 2GHz, the 3-dB relative bandwidth is 68.6% (corresponding to the frequency band of 1.36-2.78 GHz), the 1-dB relative bandwidth is 54% (corresponding to the frequency band of 1.47-2.53 GHz), the minimum insertion loss in the passband is 0.57dB, the stop band in the frequency band range of 3.1-14 GHz reaches more than 20dB, the isolation in the frequency range of 0-16GHz reaches more than 21dB, and the isolation outside the passband can be controlled to be more than 30 dB. In addition, there are 1 transmission zero point at each of 1GHz and 3GHz, showing good frequency selective characteristics.
FIG. 9 shows the reflection parameter S obtained by simulation of CST MWS three-dimensional simulation software in this embodiment 11 A frequency response curve. As can be seen from FIG. 8, the band is out of band in the range of 0 to 4.7GHzThe reflection signal is suppressed by more than 10dB, particularly in the frequency range of 0-4GHz, the reflection signal S11 is smaller than-11.6 dB, and the reflection-free performance is good.
FIG. 10 shows the transmission parameters S of two absorption-type filter power splitters without pi-type defect group structure and improved pi-type defect group structure in the embodiment of the present invention 21 Comparison curves. It can be seen from the figure that under the condition of no change of other conditions, the transmission performance of the absorption type filter power divider with the pi-type defect-free group structure is kept consistent in the low frequency band and the passband range, the out-of-band suppression reaches 20dB in the 3.1-4GHz frequency band range, the suppression is poorer in the frequency band range higher than 5GHz, and the highest point reaches-4.6 dB. In the embodiment of the design, the stop band in the frequency band range of 3.1-14 GHz reaches more than 20dB, and the inhibition bandwidth of the 20-dB stop band reaches 7f 0 (f 0 Is the working center frequency) has excellent performance of wide stop band.
The invention constructs an absorption-isolation composite network and loads a defected ground group structure to realize dual performance of no reflection and isolation, expands the stop band bandwidth of the absorption type filtering power divider, has simple and compact structure, is easy to integrate and miniaturize, and simultaneously realizes excellent performances of full-band absorption, high isolation, wide isolation range, good absorption effect, high out-of-band rejection, good pass band and the like.
While the foregoing is directed to embodiments of the present invention, other and further details of the invention may be devised without departing from the basic scope thereof, and the scope thereof is determined by the claims that follow.
Claims (6)
1. The wide stop band absorption type filtering power divider is characterized by comprising a top layer metal structure M which is stacked from top to bottom 1 Intermediate dielectric substrate MS and bottom metal ground structure M 2 The method comprises the steps of carrying out a first treatment on the surface of the The interlayer dielectric substrate MS is provided with a pair of metal through holes VH in a penetrating way; the upper and lower ends of the metal through hole VH are respectively connected with the top metal structure M 1 Bottom metal ground structure M 2 Is connected with each other; the top metal structure M 1 Symmetrically arranged about a y-direction central axis; the top metal structure M 1 Includes a first microstrip line TL 1 To sixth microstrip line TL 6 First coupling structure CL 1 Second coupling structure CL 2 A first resistor R e1 A second resistor R e2 Ground structure G 1 The method comprises the steps of carrying out a first treatment on the surface of the The first coupling structure CL 1 Comprising parallel arranged first coupled lines CL 1 a and a second coupled line CL 1 b; the second coupling structure CL 2 Comprising third coupled lines CL arranged in parallel 2 a and fourth coupled line CL 2 b; the first microstrip line TL 1 Is connected with the first input port; the first microstrip line TL 1 Is connected with the other end of the sixth microstrip line TL 6 Is connected with one end of the connecting rod; the sixth microstrip line TL 6 The other end of (a) is coupled with the second coupled line CL 1 b is connected with one end; the second coupled line CL 1 b and a second microstrip line TL 2 Is connected with one end of the connecting rod; second microstrip line TL 2 The other end of (a) is respectively connected with the first resistor R e1 Is a microstrip line TL 3 Is connected with one end of the connecting rod; the first resistor R e1 And the other end of the ground structure G 1 Is connected with one end of the connecting rod; the first coupling line CL 1 a is open at one end and connected with the third coupling line CL at the other end 2 One end of a is vertically connected to form an L-shaped structure; third coupled line CL 2 The other end of a is open; fourth coupled line CL 2 b has one end open circuit and the other end connected with the fifth microstrip line TL 5 One end of the connecting rod is vertically connected to form an L-shaped structure, and a chamfer is arranged at the connecting position; the fifth microstrip line TL 5 The other end of the first port is connected with the second port; the first coupling line CL 1 a and a third coupled line CL 2 a, a fourth microstrip line TL of a half-wavelength L shape is arranged at the right angle connection part of the a and the angular bisector 4 The method comprises the steps of carrying out a first treatment on the surface of the The fourth microstrip line TL 4 A chamfer is arranged at the bending part of the steel plate, and a gradual change structure is arranged at the right-angle joint part; the first microstrip line TL 1 To sixth microstrip line TL 6 First coupling structure CL 1 Second oneCoupling structure CL 2 A first resistor R e1 Ground structure G 1 The second output port is symmetrically arranged about the y-direction central axis, and the third output port is symmetrically arranged about the y-direction central axis, so that a symmetrical circuit structure is formed; the second resistor R e2 Respectively with a second coupling line CL symmetrical about the y-direction central axis 1 The other end of b is connected; first resistor R symmetrical about central axis in y direction e1 A second microstrip line TL 2 A third microstrip line TL 3 Ground structure G 1 A second resistor R e2 Forming a closed T-shaped network structure; ground structure G 1 Is connected with the bottom metal ground structure M through the metal through hole VH 2 Is connected with each other.
2. The wide stop band absorption type filter power divider according to claim 1, wherein the bottom metal ground structure M 2 A first defected ground structure group (1) and a second defected ground structure group (2) which are symmetrical with respect to a central axis in the y direction are arranged on the surface in a hollowed-out manner; the first defected ground structure group (1) and the second defected ground structure group (2) comprise a plurality of pi-shaped defected ground structures DGS which are periodically arranged in the y direction; the pi-shaped defective ground structure DGS comprises a rectangular hollow structure and two symmetrical round hollow structures; the rectangular hollow structure is connected with the round hollow structure through a section of rectangular groove structure line.
3. The wide stop band absorption type filter power divider as set forth in claim 1, wherein the microwave signal passes through the first microstrip line TL when being fed in from the input port 1 A pair of first coupling structures CL symmetrically distributed 1 The signal equal division transmission is completed, and the microwave signal passes through the first coupling structure CL 1 With a second coupling structure CL 2 The formed resonant structure forms a broadband band-pass filtering function; first coupling structure CL 1 With a second coupling structure CL 2 Half-wavelength fourth microstrip line TL with parallel connection at connection part 4 Two transmission zero points are respectively formed at two sides of the passband, and the generated filtered microwave signal passes through the fifth microstrip line TL 5 Respectively outputting through the second output port and the third output port to form an equal-power band-pass filtering signal output; the out-of-band microwave reflected signal enters a T-shaped network structure and is reflected by a first resistor R e1 Absorption, forming a non-reflective property of the signal; the crosstalk signals between the second output port and the third output port are respectively transmitted by the first resistor R through the T-shaped network structure e1 And a second resistor R e2 Absorbing to form an isolation property; the filtered power-division microwave signal passes through the fifth microstrip line TL 5 In the process of transmitting to the second output port and the third output port, the out-of-band signals of the high frequency band are restrained under the action of the low-pass effect of the first defected ground structure group (1) and the second defected ground structure group (2), so that the wide stop band performance is formed.
4. The wide stop band absorption filter power divider of claim 1, wherein the fourth microstrip line TL 4 Is L4 in length; wherein L4 and center frequency f 0 Relative dielectric constant ε of interlayer dielectric substrate MS r The relation between them is satisfied:
5. the wide stop band absorption type filter power divider according to claim 1, wherein the third microstrip line TL 3 Is L3; wherein L3 and center frequency f 0 Relative dielectric constant ε of interlayer dielectric substrate MS r The relation between them is satisfied:
6. the wide stop band absorption filter power divider of claim 1, wherein the sixth microstrip line TL 6 Is L6; wherein L6 and center frequency f 0 Relative dielectric constant ε of interlayer dielectric substrate MS r The relation between them is satisfied:
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202310924661.2A CN116826344A (en) | 2023-07-26 | 2023-07-26 | Wide stop band absorption type filtering power divider |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202310924661.2A CN116826344A (en) | 2023-07-26 | 2023-07-26 | Wide stop band absorption type filtering power divider |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN116826344A true CN116826344A (en) | 2023-09-29 |
Family
ID=88116808
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202310924661.2A Pending CN116826344A (en) | 2023-07-26 | 2023-07-26 | Wide stop band absorption type filtering power divider |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN116826344A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN117374543A (en) * | 2023-12-05 | 2024-01-09 | 兰州交通大学 | Integrated resonance suppression power divider |
-
2023
- 2023-07-26 CN CN202310924661.2A patent/CN116826344A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN117374543A (en) * | 2023-12-05 | 2024-01-09 | 兰州交通大学 | Integrated resonance suppression power divider |
| CN117374543B (en) * | 2023-12-05 | 2024-04-19 | 兰州交通大学 | Integrated resonance suppression power divider |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN113410638B (en) | Dual-polarization broadband millimeter wave filtering antenna based on super surface and communication equipment | |
| CN105514547A (en) | Low-pass band-pass five-duplex based on novel frequency separation structure | |
| CN116826344A (en) | Wide stop band absorption type filtering power divider | |
| CN112332051B (en) | Ultra-wideband filter | |
| CN113300108A (en) | Dual-polarized wide-stop-band filtering antenna | |
| US6064281A (en) | Semi-lumped bandpass filter | |
| CN115275545B (en) | Compact absorption type filtering power divider | |
| CN111430868A (en) | Balanced to unbalanced filtering power divider with broadband common mode rejection | |
| CN114978086B (en) | Low-loss high-phase-matching balun chip based on coplanar waveguide and application thereof | |
| CN114976540B (en) | Reflection-free band-pass filter based on three-wire coupling structure | |
| CN112688041B (en) | Multipath cross-coupling millimeter wave filter | |
| CN215376360U (en) | Parameter amplifying device | |
| CN109755711A (en) | The double-deck half module substrate integrated wave guide wideband filtered coupler | |
| CN113708030B (en) | Balance ultra-wideband band-pass filter based on multimode slot line resonator | |
| CN116130910A (en) | Electromagnetic band gap filtering power divider | |
| CN110492209B (en) | Self-packaging ultra-wideband balanced filter based on multi-layer LCP circuit technology | |
| CN114843729A (en) | Unbalanced to balanced millimeter wave substrate integrated waveguide filtering power divider | |
| CN210403988U (en) | Miniaturized high-isolation vehicle-mounted radio frequency signal separator | |
| CN113113742A (en) | Transverse signal interference double-broadband band-pass filter | |
| CN109103558B (en) | Broadband square ground coupling strip line bridge | |
| CN113505893A (en) | Parameter amplifying device and preparation method thereof | |
| CN114628873B (en) | Absorption type microstrip line band elimination filter structure | |
| Fang et al. | Synthesis and Design of SIW Bandpass Filter With Impedance Transformation for Filtering Antenna | |
| CN220474866U (en) | N-order quarter-wavelength high out-of-band rejection filter structure and filter | |
| CN216488426U (en) | Miniaturized high-performance duplexer |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination |