CN215404467U - Low-temperature ITO (indium tin oxide) coating cavity - Google Patents
Low-temperature ITO (indium tin oxide) coating cavity Download PDFInfo
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- CN215404467U CN215404467U CN202120409106.2U CN202120409106U CN215404467U CN 215404467 U CN215404467 U CN 215404467U CN 202120409106 U CN202120409106 U CN 202120409106U CN 215404467 U CN215404467 U CN 215404467U
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Abstract
The utility model discloses a low-temperature ITO (indium tin oxide) coating cavity, which is characterized in that: the ITO coating device comprises an inlet chamber, a buffer chamber, a transition chamber, a coating chamber and an outlet chamber, wherein when ITO coating is carried out on a substrate with an insulating layer OC, vacuum pumps are arranged in the inlet chamber, the buffer chamber, the transition chamber, the coating chamber, the transition chamber, the buffer chamber and the outlet chamber, and cold hydrazine is also arranged in the transition chamber and the coating chamber. The cold trap is a device for pumping out impurities and water vapor in a vacuum cavity by utilizing a low-temperature surface, has low cost, and can realize the same pumping action of a vacuum pump. The arrangement of the cold trap increases the air exhaust capacity, so that the escaping impurity gas of the OC material can be effectively removed, the full-frame hanging piece of the low-temperature ITO coating film is realized, and the production efficiency is further improved.
Description
Technical Field
The utility model belongs to the technical field of touch screen manufacturing, and particularly relates to a low-temperature ITO (indium tin oxide) coating cavity which is used for removing miscellaneous gases in the cavity and improving the low-temperature ITO coating efficiency.
Background
As a latest computer input device, the touch screen is a simple, convenient and natural man-machine interaction mode. The capacitive screen is the most active capacitive screen, works by utilizing current induction of a human body, a layer of transparent special metal conductive substance is pasted on the surface of glass, and when a conductive object touches the transparent special metal conductive substance, the capacitance of a contact point can be changed, so that the touched position can be detected.
The OGS product in the capacitive screen becomes a hot door due to low cost, but the yield is always low, and the main defect is electrostatic damage. Through design optimization, a layer of insulating layer OC is arranged below the ITO film layer in a cushioning mode, so that the problem that the yield is abnormally improved can be solved, but the OC is an organic material and is not high-temperature-resistant, a large amount of miscellaneous gas can escape after the OC is baked by a film coating cavity, the resistance value of the ITO film layer is unstable, the resistance value exceeds the existing specification, and the quality is unstable. Aiming at the above abnormity, the current technical scheme is to reduce the number of hanging pieces, and the full rack (4 ST/rack) is changed into a half rack (2 ST/rack), but the number of hanging pieces of each rack is reduced, the output per hour is reduced by half, the production efficiency is only 50%, and the production cost is higher.
SUMMERY OF THE UTILITY MODEL
Aiming at the defects in the prior art, the utility model aims to provide the low-temperature ITO coating cavity which is simple in structure and convenient to use, air extraction capacity is improved by adding air extraction equipment, escaping miscellaneous gases of OC materials are effectively removed, full-frame hanging pieces of the low-temperature ITO coating are realized, and production efficiency is further improved.
In order to achieve the purpose, the technical scheme of the utility model is as follows: a low temperature ITO coating film cavity which characterized in that: the ITO coating device comprises an inlet chamber, a buffer chamber, a transition chamber, a coating chamber and an outlet chamber, wherein when ITO coating is carried out on a substrate with an insulating layer OC, vacuum pumps are arranged in the inlet chamber, the buffer chamber, the transition chamber, the coating chamber, the transition chamber, the buffer chamber and the outlet chamber, and cold hydrazine is also arranged in the transition chamber and the coating chamber.
Furthermore, the coating chambers comprise a first coating chamber, a second coating chamber and a third coating chamber, and the first coating chamber, the second coating chamber and the third coating chamber are sequentially arranged adjacently and are located in the middle of the ITO coating cavity.
Furthermore, a Si target is arranged in the first film coating chamber, and ITO targets are arranged in the second film coating chamber and the third film coating chamber.
Furthermore, the first coating chamber, the second coating chamber and the third coating chamber are respectively provided with a vacuum pump, cold hydrazine is further arranged in the first coating chamber, and the substrate with the insulating layer OC sequentially passes through the first coating chamber, the second coating chamber and the third coating chamber.
Furthermore, the transition chamber comprises a first transition chamber and a second transition chamber, the first transition chamber is positioned in front of the first coating chamber, the second transition chamber is positioned behind the third coating chamber, and the substrate with the insulating layer OC sequentially passes through the first transition chamber, the first coating chamber, the second coating chamber, the third coating chamber and the second transition chamber.
Furthermore, the first transition chamber and the second transition chamber are both provided with vacuum pumps, and the first transition chamber is also provided with cold hydrazine.
Further, the buffer chamber comprises a first buffer chamber and a second buffer chamber, the first buffer chamber is located behind the inlet chamber and in front of the first transition chamber, and the second buffer chamber is located behind the second transition chamber and in front of the outlet chamber.
Furthermore, vacuum pumps are arranged in the first buffer chamber and the second buffer chamber, and the substrate with the insulating layer OC sequentially passes through the inlet chamber, the first buffer chamber, the first transition chamber, the first film coating chamber, the second film coating chamber, the third film coating chamber, the second transition chamber, the second buffer chamber and the outlet chamber.
Furthermore, the refrigeration temperature of the cold hydrazine is less than or equal to 130K, and the helium pressure of the cold hydrazine is 2-2.5 Mpa.
The technical scheme adopted by the utility model has the advantages that:
1. the structural design of the low-temperature ITO coating cavity further reduces the temperature in the ITO coating cavity, enhances the air exhaust capacity, enables the low-temperature ITO coating to realize full-car hanging, improves the production efficiency by 50 percent, and has stable film quality.
2. The cold trap is arranged, so that the air extraction capacity is increased, the escaping miscellaneous gas of the OC material can be effectively removed, the cost is low, the refrigeration temperature of the cold trap is less than or equal to 130K, the full-frame hanging piece of the low-temperature ITO coating is realized, and the production efficiency is further improved.
Drawings
The utility model is described in further detail below with reference to the following figures and detailed description:
FIG. 1 is a schematic view of a low-temperature ITO coating chamber according to the present invention.
The labels in the above figures are respectively: 1. an inlet chamber; 2. a first buffer chamber; 3. a first transition chamber; 4. a first coating chamber; 5. a second coating chamber; 6. a third coating chamber; 7. a second transition chamber; 8. a second buffer chamber; 9. an outlet chamber; 10. a vacuum pump; 11. cooling hydrazine; 12. a Si target; 13. an ITO target.
Detailed Description
In the present invention, it is to be understood that the term "length"; "Width"; "Up"; "Down"; "front"; "Back"; "left"; "Right"; "vertical"; "horizontal"; "Top"; "bottom" "inner"; "outer"; "clockwise"; "counterclockwise"; "axial"; "planar direction"; "circumferential" and the like indicate orientations or positional relationships that are based on the orientations or positional relationships shown in the drawings, and are only for convenience in describing the present invention and simplifying the description, but do not indicate or imply that the indicated device or element must have a particular orientation; constructed and operative in a particular orientation and therefore should not be construed as limiting the utility model.
As shown in fig. 1, a low-temperature ITO coating cavity is characterized in that: the ITO coating machine comprises an inlet chamber 1, a buffer chamber, a transition chamber, a coating chamber and an outlet chamber 9, wherein when ITO coating is carried out on a substrate with an insulating layer OC, a vacuum pump 10 is respectively arranged in the inlet chamber 1, the buffer chamber, the transition chamber, the coating chamber, the buffer chamber and the outlet chamber 9 through the inlet chamber 1, the buffer chamber, the transition chamber, the coating chamber and the outlet chamber 9, and cold hydrazine 11 is also arranged in the transition chamber and the coating chamber. The cold trap is a device for pumping out impurities and water vapor in a vacuum cavity by utilizing a low-temperature surface, has low cost, and can realize the same pumping action of a vacuum pump. The arrangement of the cold hydrazine 11 increases the air extraction capacity, so that the escaping miscellaneous gas of the OC material can be effectively removed, the cost is low, the refrigeration temperature of the cold hydrazine is less than or equal to 130K, the full-frame hanging piece of the low-temperature ITO coating is realized, and the production efficiency is further improved.
The coating chamber comprises a first coating chamber 4, a second coating chamber 5 and a third coating chamber 6, wherein the first coating chamber 4, the second coating chamber 5 and the third coating chamber 6 are sequentially and adjacently arranged and are positioned in the middle of the ITO coating cavity. A Si target 12 is arranged in one film plating chamber 4, and ITO targets 13 are arranged in the second film plating chamber 5 and the third film plating chamber 6. The first coating chamber 4, the second coating chamber 5 and the third coating chamber 6 are all provided with a vacuum pump 10, a cold trap 11 is further arranged in the first coating chamber 4, and the substrate with the insulating layer OC sequentially passes through the first coating chamber 4, the second coating chamber 5 and the third coating chamber 6.
The transition chamber comprises a first transition chamber 3 and a second transition chamber 7, the first transition chamber 3 is located in front of the first film coating chamber 4, the second transition chamber 7 is located behind the third film coating chamber 6, the first transition chamber 3 and the second transition chamber 7 are both provided with a vacuum pump 10, a cold trap 11 is further arranged in the first transition chamber 3, and a substrate with an insulating layer OC sequentially passes through the first transition chamber 3, the first film coating chamber 4, the second film coating chamber 5, the third film coating chamber 6 and the second transition chamber 7.
The buffer chambers comprise a first buffer chamber 2 and a second buffer chamber 8, the first buffer chamber 2 being located behind the inlet chamber 1 in front of the first transition chamber 3, the second buffer chamber 8 being located behind the second transition chamber 7 in front of the outlet chamber 9. Vacuum pumps 10 are respectively arranged in the first buffer chamber 2 and the second buffer chamber 8, and a substrate with an insulating layer OC sequentially passes through the inlet chamber 1, the first buffer chamber 2, the first transition chamber 3, the first film coating chamber 4, the second film coating chamber 5, the third film coating chamber 6, the second transition chamber 7, the second buffer chamber 8 and the outlet chamber 9.
The refrigeration temperature of the cold hydrazine 11 is less than or equal to 130K, namely minus 143.5 ℃, the helium pressure of the cold hydrazine 11 is 2-2.5Mpa, and the number of the cold hydrazine 11 is more than or equal to 2 groups, and the refrigeration temperature can be specifically determined according to the cavity sealing effect and the material gas escape condition.
The structural design of the low-temperature ITO coating cavity further enhances the air exhaust capacity in the ITO coating cavity, so that the low-temperature ITO coating realizes full-car hanging, the production efficiency is improved by 50%, and meanwhile, the film quality is stable and the cost is low.
The utility model is described above with reference to the accompanying drawings, it is obvious that the specific implementation of the utility model is not limited by the above-mentioned manner, and it is within the scope of the utility model to adopt various insubstantial modifications of the technical solution of the utility model or to apply the concept and technical solution of the utility model directly to other occasions without modification.
Claims (9)
1. A low temperature ITO coating film cavity which characterized in that: the ITO coating machine comprises an inlet chamber (1), a buffer chamber, a transition chamber, a coating chamber and an outlet chamber (9), wherein when ITO coating is carried out on a substrate with an insulating layer OC, the substrate passes through the inlet chamber (1), the buffer chamber, the transition chamber, the coating chamber and the outlet chamber (9), vacuum pumps (10) are arranged in the inlet chamber (1), the buffer chamber, the transition chamber, the coating chamber and the outlet chamber (9), and cold hydrazine (11) is further arranged in the transition chamber and the coating chamber.
2. The low-temperature ITO coating chamber of claim 1, wherein: the coating chamber comprises a first coating chamber (4), a second coating chamber (5) and a third coating chamber (6), wherein the first coating chamber (4), the second coating chamber (5) and the third coating chamber (6) are sequentially and adjacently arranged and are located in the middle of the ITO coating cavity.
3. The low-temperature ITO coating chamber of claim 2, wherein: a Si target (12) is arranged in the first film plating chamber (4), and ITO targets (13) are arranged in the second film plating chamber (5) and the third film plating chamber (6).
4. The low-temperature ITO coating chamber of claim 3, wherein: the vacuum coating device is characterized in that the first coating chamber (4), the second coating chamber (5) and the third coating chamber (6) are respectively provided with a vacuum pump (10), a cold trap (11) is further arranged in the first coating chamber (4), and a substrate with an insulating layer OC sequentially passes through the first coating chamber (4), the second coating chamber (5) and the third coating chamber (6).
5. The low-temperature ITO coating chamber of claim 3 or 4, wherein: the transition chamber comprises a first transition chamber (3) and a second transition chamber (7), the first transition chamber (3) is located in front of the first coating chamber (4), the second transition chamber (7) is located behind the third coating chamber (6), and the substrate with the insulating layer OC sequentially passes through the first transition chamber (3), the first coating chamber (4), the second coating chamber (5), the third coating chamber (6) and the second transition chamber (7).
6. The low-temperature ITO coating chamber of claim 5, wherein: the first transition chamber (3) and the second transition chamber (7) are both provided with a vacuum pump (10), and a cold trap (11) is further arranged in the first transition chamber (3).
7. The low-temperature ITO coating chamber of claim 6, wherein: the buffer chambers comprise a first buffer chamber (2) and a second buffer chamber (8), the first buffer chamber (2) is located in front of a first transition chamber (3) behind the inlet chamber (1), and the second buffer chamber (8) is located in front of a rear outlet chamber (9) behind the second transition chamber (7).
8. The low-temperature ITO coating chamber of claim 7, wherein: the vacuum pumps (10) are arranged in the first buffer chamber (2) and the second buffer chamber (8), and the substrate with the insulating layer OC sequentially passes through the inlet chamber (1), the first buffer chamber (2), the first transition chamber (3), the first coating chamber (4), the second coating chamber (5), the third coating chamber (6), the second transition chamber (7), the second buffer chamber (8) and the outlet chamber (9).
9. The low-temperature ITO coating chamber of claim 8, wherein: the refrigeration temperature of the cold hydrazine (11) is less than or equal to 130K, and the helium pressure of the cold hydrazine (11) is 2-2.5 Mpa.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202120409106.2U CN215404467U (en) | 2021-02-24 | 2021-02-24 | Low-temperature ITO (indium tin oxide) coating cavity |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202120409106.2U CN215404467U (en) | 2021-02-24 | 2021-02-24 | Low-temperature ITO (indium tin oxide) coating cavity |
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| Publication Number | Publication Date |
|---|---|
| CN215404467U true CN215404467U (en) | 2022-01-04 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202120409106.2U Active CN215404467U (en) | 2021-02-24 | 2021-02-24 | Low-temperature ITO (indium tin oxide) coating cavity |
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