CN215375503U

CN215375503U - High voltage resistance testing device for MOS bipolar chip

Info

Publication number: CN215375503U
Application number: CN202121187325.7U
Authority: CN
Inventors: 潘锋
Original assignee: Henan Shenfu Electronic Technology Co ltd
Current assignee: Henan Shenfu Electronic Technology Co ltd
Priority date: 2021-05-31
Filing date: 2021-05-31
Publication date: 2021-12-31
Anticipated expiration: 2031-05-31

Abstract

The utility model discloses a high-voltage-resistant testing device for an MOS bipolar chip, which comprises a base, cushion blocks, supporting columns, supporting plates, a buffering and pressing device, a bearing platform, a high-voltage detection mechanism, a detection probe, a supporting column and a placing plate. The utility model belongs to the technical field of chip voltage-withstanding detection, and particularly relates to a high-voltage-withstanding testing device for an MOS bipolar chip, which can press down the MOS bipolar chip so as to further contact the MOS bipolar chip with a detection probe, thereby improving the testing efficiency and the testing accuracy, and can control the force well while pressing down the MOS bipolar chip so as to avoid the MOS bipolar chip from being damaged by overlarge force.

Description

High voltage resistance testing device for MOS bipolar chip

Technical Field

The utility model belongs to the technical field of chip voltage resistance detection, and particularly relates to a high voltage resistance testing device for an MOS bipolar chip.

Background

In the production process of the MOS bipolar chip, a series of complex and fussy detections need to be carried out on the MOS bipolar chip, the detections have high accuracy, one of the detections needs to carry out high-voltage resistance tests on the MOS bipolar chip, and the traditional high-voltage resistance tests are easy to detect the MOS bipolar chip because of the problem of poor contact between the MOS bipolar chip and a detection probe, thereby greatly reducing the accuracy after the detection, further influencing the data of the detection and increasing the production cost. Therefore, the high-voltage-resistant testing device for the MOS bipolar chip, provided by the utility model, can be used for pressing down the MOS bipolar chip so as to further contact the MOS bipolar chip with the detection probe, thereby improving the testing efficiency and the testing accuracy, and meanwhile, the force can be well controlled while the MOS bipolar chip is pressed down, so that the MOS bipolar chip is prevented from being damaged by overlarge force.

SUMMERY OF THE UTILITY MODEL

In order to solve the problems, the utility model provides the high-voltage-resistant testing device for the MOS bipolar chip, which can press down the MOS bipolar chip so as to further contact the MOS bipolar chip with the detection probe, thereby improving the testing efficiency and the testing accuracy, and can control the force well while pressing down the MOS bipolar chip so as to avoid the MOS bipolar chip from being damaged by overlarge force.

In order to realize the functions, the technical scheme adopted by the utility model is as follows: a high-voltage resistance testing device for an MOS bipolar chip comprises a base, cushion blocks, supporting columns, supporting plates, buffering pressing devices, a bearing platform, a high-voltage detection mechanism, detection probes, a supporting column and a placing plate, wherein the cushion blocks are uniformly arranged under the base, the supporting columns are arranged on the base, the supporting columns are arranged in two groups by taking the vertical central line of the base as a symmetry axis, the supporting plates are arranged on the supporting columns to play a role of fixing and supporting, so that the whole body is more stable, the buffering pressing devices are arranged on the supporting plates and can press the MOS bipolar chip down, the MOS bipolar chip is further contacted with the detection probes, the force can be well controlled while the MOS bipolar chip is pressed down, the MOS chip is prevented from being damaged due to overlarge force, the bearing platform is arranged on the base, the high-voltage detection mechanism is arranged on the bearing platform, and the detection probes are uniformly arranged on the high-voltage detection mechanism, the detection probe is convenient for contact detection with the chip, the pillars are arranged on the bearing platform, the pillars are arranged in two groups by taking the vertical central line of the high-voltage detection mechanism as a symmetry axis, and the placing plate is arranged on the pillars and is convenient for placing the chip for detection; the buffering pressing device comprises a limiting sleeve ring, a connecting column, a motor, a gear, a moving column, a rack, a pressing plate, a limiting column, a slide rail, a slide block, a pressing block and a compression spring, wherein the limiting sleeve ring penetrates through the central position of the supporting plate and is arranged, the connecting column is arranged under the supporting plate, the motor is arranged at the bottom end of the connecting column, the gear is arranged at the output end of the motor, the moving column moves through the limiting sleeve ring, the rack is arranged on the side wall of the moving column, the rack is meshed with the gear, the pressing plate is arranged under the moving column, the limiting column is uniformly arranged under the pressing plate, the slide rail is embedded on the side wall of the limiting column, the slide block is slidably clamped on the slide rail, the pressing block is arranged at the joint of the slide block, one end of the compression spring is arranged under the pressing plate, the other end of the compression spring is arranged on the pressing block, the motor drives the gear to rotate, and the gear drives the rack to move, the rack drives and removes the post and removes in spacing lantern ring, it removes to remove the post and presses down according to the pressure board, when pressing the chip on the pressing block contact place board, press the pressing block can produce upwards extrusion compression spring when pressing the chip downwards, unload the power, press the pressing block to slide in the slide rail through the slider, carry out the ascending spacing of vertical side, avoid pressing the slope of pressing the pressing block, push down MOS bipolar chip, thereby make MOS bipolar chip and the further contact of test probe, thereby improve the degree of accuracy of efficiency of software testing and test, simultaneously push down MOS bipolar chip can be fine control dynamics, avoid the dynamics to cause the injury to MOS bipolar chip excessively.

Further, evenly inlay on placing the board and be equipped with the recess, the recess sets up with test probe one-to-one, the recess diapire runs through and is equipped with the probe hole, and the chip can be placed to the recess, and test probe passes through the chip contact detection of placing in probe mouth and the recess.

Furthermore, according to the setting of pressing block and recess one-to-one, be convenient for push down the chip, make the contact chip that test probe can be better detect.

Furthermore, a cushion layer is arranged below the pressing block and made of rubber materials, so that the cushion layer has a protection effect on the chip on one hand and plays an insulating role on the other hand.

Furthermore, the motor is a servo motor, so that the rotation direction can be conveniently controlled, and the moving direction of the moving column can be controlled.

The utility model adopts the structure to obtain the following beneficial effects: the high-voltage-resistant testing device for the MOS bipolar chip provided by the utility model has the advantages that through the arrangement of the buffering pressing device, the motor drives the gear to rotate, the gear drives the rack to move, the rack drives the moving column to move in the limiting sleeve ring, the moving column drives the pressing plate to move and press, when the pressing block contacts the chip on the placing plate, the pressing block presses the chip downwards and simultaneously generates an upward extrusion compression spring to unload force, the pressing block slides in the sliding rail through the sliding block to limit the position in the vertical direction, the inclination of the pressing block is avoided, the MOS bipolar chip is pressed downwards, the MOS bipolar chip is further contacted with the detection probe, the testing efficiency and the testing accuracy are improved, meanwhile, the force can be well controlled while the MOS bipolar chip is pressed downwards, the MOS bipolar chip is prevented from being damaged due to excessive force, and through the arrangement of the groove and the probe hole, the chip can be placed to the recess, and the chip contact that test probe placed in through probe mouth and recess detects, through the setting of bed course, has the guard action to the chip on the one hand, and on the other hand plays insulating effect.

Drawings

FIG. 1 is a schematic diagram of the overall structure of a high voltage withstand test device for a MOS bipolar chip according to the present invention;

FIG. 2 is an enlarged view of a portion A of FIG. 1;

fig. 3 is a sectional view of a mounting board of a high voltage withstand test apparatus for a MOS bipolar chip of the present invention.

The device comprises a base 1, a base 2, cushion blocks 3, support columns 4, a support plate 5, a buffering pressing device 6, a supporting platform 7, a high-voltage detection mechanism 8, a detection probe 9, a support column 10, a placing plate 11, a limiting lantern ring 12, a connecting column 13, a motor 14, a gear 15, a moving column 16, a rack 17, a pressing plate 18, a limiting column 19, a sliding rail 20, a sliding block 21, a pressing block 22, a compression spring 23, a groove 24, a probe hole 25 and a cushion layer.

Detailed Description

The technical solutions of the present invention will be described clearly and completely with reference to the accompanying drawings, and it should be understood that the described embodiments are some, but not all embodiments of the present invention. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.

In the description of the present invention, it should be noted that the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer", etc., indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings, and are only for convenience of description and simplicity of description, but do not indicate or imply that the device or element being referred to must have a particular orientation, be constructed and operated in a particular orientation, and thus, should not be construed as limiting the present invention. Furthermore, the terms "first," "second," and "third" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance. The present invention will be described in further detail with reference to the accompanying drawings.

As shown in fig. 1-3, the high voltage resistance testing device for MOS bipolar chip of the present invention comprises a base 1, cushion blocks 2, support columns 3, a support plate 4, buffer pressing devices 5, a support table 6, a high voltage detection mechanism 7, a detection probe 8, a support column 9 and a placing plate 10, wherein the cushion blocks 2 are uniformly arranged under the base 1, the support columns 3 are arranged on the base 1, the support columns 3 are arranged in two sets with the vertical central line of the base 1 as a symmetry axis, the support plate 4 is arranged on the support columns 3, the buffer pressing devices 5 are arranged on the support plate 4, the support table 6 is arranged on the base 1, the high voltage detection mechanism 7 is arranged on the support table 6, the detection probes 8 are uniformly arranged on the high voltage detection mechanism 7, the support column 9 is arranged on the support table 6, the support columns 9 are arranged in two sets with the vertical central line of the high voltage detection mechanism 7 as a symmetry axis, the placing plate 10 is arranged on the support column 9; the buffering pressing device comprises a limiting sleeve ring 11, a connecting post 12, a motor 13, a gear 14, a moving post 15, a rack 16, a pressing plate 17, a limiting post 18, a sliding rail 19, a sliding block 20, a pressing block 21 and a compression spring 22, wherein the limiting sleeve ring 11 penetrates through the central position of a supporting plate 4 to be arranged, the connecting post 12 is arranged below the supporting plate 4, the motor 13 is arranged at the bottom end of the connecting post 12, the gear 14 is arranged at the output end of the motor 13, the moving post 15 is arranged by moving through the limiting sleeve ring 11, the rack 16 is arranged on the side wall of the moving post 15, the rack 16 is meshed with the gear 14, the pressing plate 17 is arranged below the moving post 15, the limiting post 18 is uniformly arranged below the pressing plate 17, the sliding rail 19 is embedded on the side wall of the limiting post 18, the sliding block 20 is clamped on the sliding rail 19, the pressing block 21 is arranged at the joint of the sliding block 20, one end of the compression spring 22 is arranged below the pressing plate 17, the other end of the compression spring 22 is arranged on the pressing block 21.

Placing plate 10 and evenly inlaying and being equipped with recess 23, recess 23 and 8 one-to-one settings of test probe, 23 diapire of recess runs through and is equipped with probe hole 24.

The pressing blocks 21 are arranged in one-to-one correspondence with the grooves 23.

A cushion layer 25 is arranged below the pressing block 21, and the cushion layer 25 is made of rubber materials.

The motor 13 is a servo motor.

When the detection device is used specifically, an MOS bipolar chip is placed in the groove 23, the motor 13 is started, the motor 13 drives the gear 14 to rotate, the gear 14 drives the rack 16 to move, the rack 16 drives the moving column 15 to move in the limiting sleeve ring 11, the moving column 15 drives the pressing plate 17 to move and press, when the pressing plate 17 is in contact with the placing plate 10, the pressing block presses the MOS bipolar chip downwards in the groove 23, when the pressing block 21 is in contact with the chip on the placing plate 10, the pressing block 21 can generate upward extrusion of the compression spring 22 when pressing the chip downwards, the force is removed, the pressing block 21 slides in the sliding rail 19 through the sliding block 20 to limit the position in the vertical direction, the detection probe 8 on the high-voltage detection mechanism 7 is in contact with the MOS bipolar chip through the probe hole 24, and then the high-voltage detection mechanism 7 is used for detecting the high voltage resistance of the MOS bipolar chip.

The present invention and its embodiments have been described above, and the description is not intended to be limiting, and the drawings are only one embodiment of the present invention, and the actual structure is not limited thereto. In summary, those skilled in the art should appreciate that they can readily use the disclosed conception and specific embodiments as a basis for designing or modifying other structures for carrying out the same purposes of the present invention without departing from the spirit and scope of the utility model as defined by the appended claims.

Claims

1. A high voltage resistance testing device for a MOS bipolar chip is characterized in that: the device comprises a base, cushion blocks, support columns, a support plate, buffer pressing devices, supporting platforms, a high-voltage detection mechanism, detection probes, support columns and a placing plate, wherein the cushion blocks are uniformly arranged under the base, the support columns are arranged on the base, the support columns are arranged in two groups by taking the vertical central line of the base as a symmetry axis, the support plates are arranged on the support columns, the buffer pressing devices are arranged on the support plates, the supporting platforms are arranged on the base, the high-voltage detection mechanism is arranged on the supporting platforms, the detection probes are uniformly arranged on the high-voltage detection mechanism, the support columns are arranged on the supporting platforms, the support columns are arranged in two groups by taking the vertical central line of the high-voltage detection mechanism as a symmetry axis, and the placing plate is arranged on the support columns; buffering press device includes spacing lantern ring, spliced pole, motor, gear, removal post, rack, press the clamp plate, spacing post, slide rail, slider, presses the briquetting and compression spring, spacing lantern ring runs through backup pad central point and puts the department setting, the spliced pole is located under the backup pad, the spliced pole bottom is located to the motor, the motor output is located to the gear, it passes the setting of spacing lantern ring to remove the post removal, the rack is located on removing the post lateral wall, rack meshing in gear, press the clamp plate to locate under the removal post, spacing post is evenly located under the clamp plate, the slide rail inlays to be located on spacing post lateral wall, the slider slides the joint in the slide rail, press the junction that the slider was located to the briquetting, compression spring one end is located under the clamp plate, the compression spring other end is located on pressing the briquetting.

2. The high voltage withstand test device for the MOS bipolar chip according to claim 1, wherein: the placing plate is evenly embedded with grooves, the grooves are arranged in one-to-one correspondence with the detection probes, and probe holes are formed in the bottom wall of each groove in a penetrating mode.

3. The high voltage withstand test device for the MOS bipolar chip according to claim 2, wherein: the pressing blocks are arranged in one-to-one correspondence with the grooves.

4. A high voltage withstand test apparatus for a MOS bipolar chip according to claim 3, wherein: a cushion layer is arranged below the pressing block and made of rubber materials.

5. The high voltage withstand test device for the MOS bipolar chip according to claim 4, wherein: the motor is a servo motor.