CN215366059U - Single crystal furnace with argon gas direction function - Google Patents
Single crystal furnace with argon gas direction function Download PDFInfo
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- CN215366059U CN215366059U CN202120725912.0U CN202120725912U CN215366059U CN 215366059 U CN215366059 U CN 215366059U CN 202120725912 U CN202120725912 U CN 202120725912U CN 215366059 U CN215366059 U CN 215366059U
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Abstract
The utility model discloses a single crystal furnace with an argon guiding function, and relates to the technical field of single crystal silicon production equipment. The crucible furnace comprises a furnace body, wherein a crucible shaft is fixed at the bottom inside the furnace body, and a crucible tray is welded and connected to the top of the crucible shaft. According to the utility model, through the mutual matching among the furnace body, the argon gas flow gathering cylinder and the three-petal type flow guide piece, the device improves the gathering property of argon gas, avoids the generation of a turbulent flow of argon gas, improves the utilization rate of argon gas, avoids the waste of argon gas and improves the yield of products, and through the mutual matching among the feeding motor, the material carrying plate and the feeding pipe, the device can continuously feed materials without stopping, the production time of monocrystalline silicon is shortened, the production efficiency is improved, the production cost is reduced, and through the mutual matching among the material storage cylinder, the material carrying plate and the material carrying plate, the device can quantitatively feed materials, and the condition of excessive one-time feeding is avoided.
Description
Technical Field
The utility model belongs to the technical field of monocrystalline silicon production equipment, and particularly relates to a monocrystalline furnace with an argon guiding function.
Background
As a semiconductor material generally used for manufacturing integrated circuits and other electronic components, there are two growing techniques of single crystal silicon at present, the float zone method and the Czochralski method, wherein the Czochralski method is a method commonly used at present, in the production of single crystal silicon, polycrystalline silicon is placed in a quartz crucible, melted by high temperature, then a seed crystal is lowered from the top into the melted polycrystalline silicon, and the melted seed crystal is recrystallized around by controlling the temperature of a liquid surface to produce an aligned single crystal silicon rod.
When utilizing single crystal silicon furnace production monocrystalline silicon, need whole use argon gas to cool off and protect the monocrystalline silicon of production, however, the solidification felt of current single crystal furnace inside is horizontal design and the size oven that does not laminate mostly, make the argon gas air current blow to produce the sinuous flow easily behind the plane, the gathering nature is relatively poor, make the argon gas low-usage, cause the waste of argon gas, unusual circumstances such as the crystal is sent out the color and is whitened even to unusual air current, the yields of product has been reduced, and current device is when producing monocrystalline silicon, can't be to continuous reinforced in the single crystal furnace, raw materials in the crucible is used up the back, just need to shut down, feed in raw materials, make monocrystalline silicon production comparatively consuming time, the production efficiency is reduced, and the production cost is improved.
SUMMERY OF THE UTILITY MODEL
The utility model aims to provide a single crystal furnace with an argon guiding function, which solves the existing problems that: the inside solidification felt of current single crystal growing furnace is horizontal design and size oven that does not laminate mostly for produce the turbulent flow easily behind the argon gas air current blows to the plane, and the gathering nature is poor relatively, makes the argon gas low-usage, causes the waste of argon gas, and unusual circumstances such as unusual air current causes the crystal to send out the color to turn white even have reduced the yields of product.
In order to solve the technical problems, the utility model is realized by the following technical scheme:
the utility model relates to a single crystal furnace with an argon guiding function, which comprises a furnace body, wherein a crucible shaft is fixed at the bottom inside the furnace body, a crucible tray is welded and connected to the top of the crucible shaft, a crucible supporting ring is placed at the top of the crucible tray, a graphite crucible is placed inside the crucible supporting ring, and a quartz crucible is placed inside the graphite crucible;
a heat preservation cylinder is fixed inside the furnace body and positioned outside the crucible tray, a heat preservation felt is assembled between the furnace body and the heat preservation cylinder, a heater is fixed at the lower end inside the heat preservation cylinder, a curing felt is fixed at the upper end inside the heat preservation cylinder, an argon gas gathering cylinder is fixed inside the curing felt, and a three-petal type flow guide piece is fixed at the top of the argon gas gathering cylinder;
the top of the furnace body is rotatably connected with a heat-insulating cover through a hinge, the top of the heat-insulating cover is provided with a first argon inlet, and the outer side of the furnace body is welded and connected with a material storage barrel;
the top of the storage barrel is provided with a second argon inlet, a material injection hole and a vacuum pumping hole, the top of the storage barrel is also fixed with a vacuum pump and a feeding motor, and the input end of the vacuum pump is connected with the vacuum pumping hole through a pumping pipe;
a central shaft rod is fixed at the output end of the feeding motor, the storage cylinder is rotationally connected with the central shaft rod, a material carrying plate is welded and connected to the lower end of the outer side of the central shaft rod, a plurality of material carrying through grooves are uniformly distributed in the material carrying plate, and the storage cylinder is rotationally connected with the material carrying plate;
the quartz crucible feeding device is characterized in that a flat plate is welded to one end inside the storage barrel and located at the top of the plate, a feeding hole is formed in the bottom of the storage barrel, a feeding pipe is welded inside the feeding hole, and one end of the feeding pipe is located at the upper end of the quartz crucible.
Furthermore, the three-petal type flow guide piece is made of quartz.
Furthermore, the outer diameter of the upper end of the three-petal type flow guide piece is 20 mm smaller than the inner diameter of the furnace body, and the outer diameter of the lower end of the three-petal type flow guide piece is equal to the outer diameter of the upper end of the argon gas flow gathering cylinder.
Further, the storage cylinder and the central shaft rod are rotatably connected through a ball bearing.
Furthermore, the ball guide groove is formed in the outer side of the material carrying plate, the ball limiting groove matched with the ball guide groove is formed in the storage cylinder, alloy balls are assembled between the ball guide groove and the ball limiting groove, and the storage cylinder is rotatably connected with the material carrying plate through the alloy balls.
Further, sealing rings are respectively assembled between the storage cylinder and the material carrying plate as well as between the material carrying plate and the material plate.
The utility model has the following beneficial effects:
1. according to the utility model, through the mutual matching of the furnace body, the argon gas flow gathering cylinder and the three-petal type flow guide piece, the device improves the gathering property of argon gas, avoids the generation of turbulent flow of argon gas, improves the utilization rate of argon gas, avoids the waste of argon gas and improves the yield of products.
2. According to the utility model, through the mutual matching among the feeding motor, the strip plate and the feeding pipe, the device can continuously feed materials without stopping the machine, the production time of monocrystalline silicon is shortened, the production efficiency is improved, and the production cost is reduced.
3. According to the quantitative feeding device, the storage barrel, the material carrying plate and the material flat plate are matched with each other, so that the quantitative feeding device can feed materials quantitatively, and the situation of excessive feeding at one time is avoided.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings used in the description of the embodiments will be briefly introduced below, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and it is obvious for those skilled in the art that other drawings can be obtained according to the drawings without creative efforts.
FIG. 1 is a schematic structural view of the present invention as a whole;
FIG. 2 is a schematic view of the internal structure of the present invention;
FIG. 3 is an enlarged view of a portion of FIG. 2A in accordance with the present invention;
FIG. 4 is a schematic structural diagram of a material carrying plate, a material leveling plate and alloy balls according to the present invention;
FIG. 5 is a schematic structural view of a three-petal type flow guide member of the present invention;
fig. 6 is a structural sectional view of the three-petal type flow guide piece of the utility model.
In the drawings, the components represented by the respective reference numerals are listed below:
1. a furnace body; 2. a crucible shaft; 3. a crucible tray; 4. a crucible supporting ring; 5. a graphite crucible; 6. a quartz crucible; 7. a heat-preserving cylinder; 8. a heat preservation felt; 9. a heater; 10. curing the felt; 11. an argon gas collecting cylinder; 12. a three-petal type flow guide piece; 13. a heat preservation cover; 14. a storage cylinder; 15. a vacuum pump; 16. a charging motor; 17. a central shaft; 18. a material carrying plate; 19. flattening the material plate; 20. a feed tube; 21. alloy ball.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
The embodiment discloses a single crystal furnace with an argon guiding function.
The utility model comprises a furnace body 1.
Please refer to fig. 1-6:
a crucible shaft 2 is fixed at the bottom inside the furnace body 1, a crucible tray 3 is welded and connected to the top of the crucible shaft 2, a crucible supporting ring 4 is placed at the top of the crucible tray 3, a graphite crucible 5 is placed inside the crucible supporting ring 4, and a quartz crucible 6 is placed inside the graphite crucible 5;
a heat preservation cylinder 7 is fixed in the furnace body 1 and positioned on the outer side of the crucible tray 3, a heat preservation felt 8 is assembled between the furnace body 1 and the heat preservation cylinder 7, a heater 9 is fixed at the lower end in the heat preservation cylinder 7, a curing felt 10 is fixed at the upper end in the heat preservation cylinder 7, an argon gas gathering cylinder 11 is fixed in the curing felt 10, and a three-petal type flow guide piece 12 is fixed at the top of the argon gas gathering cylinder 11;
preferably, the three-petal flow guide piece 12 is made of quartz;
preferably, the outer diameter of the upper end of the three-petal type flow guide piece 12 is 20 mm smaller than the inner diameter of the furnace body 1, and the outer diameter of the lower end of the three-petal type flow guide piece 12 is equal to the outer diameter of the upper end of the argon gas gathering cylinder 11;
the top of the furnace body 1 is rotatably connected with a heat-insulating cover 13 through a hinge, the top of the heat-insulating cover 13 is provided with a first argon inlet, and the outer side of the furnace body 1 is welded and connected with a storage barrel 14;
the top of the storage barrel 14 is provided with a second argon inlet, a material injection hole and a vacuum pumping hole, the top of the storage barrel 14 is also fixed with a vacuum pump 15 and a feeding motor 16, and the input end of the vacuum pump 15 is connected with the vacuum pumping hole through a pumping pipe;
a central shaft rod 17 is fixed at the output end of the feeding motor 16, the storage barrel 14 is rotationally connected with the central shaft rod 17 through a ball bearing, a material carrying plate 18 is welded and connected to the lower end of the outer side of the central shaft rod 17, a plurality of material carrying through grooves are uniformly distributed in the material carrying plate 18, and the storage barrel 14 is rotationally connected with the material carrying plate 18;
here, the outer side of the material carrying plate 18 is provided with a ball guide groove, the interior of the material storage barrel 14 is provided with a ball limiting groove adapted to the ball guide groove, an alloy ball 21 is assembled between the ball guide groove and the ball limiting groove, and the material storage barrel 14 and the material carrying plate 18 are rotationally connected through the alloy ball 21;
a flat material plate 19 is welded and connected to one end of the interior of the material storage barrel 14 and the top of the material carrying plate 18, a feeding hole is formed in the bottom of the material storage barrel 14, a feeding pipe 20 is welded and connected to the interior of the feeding hole, and one end of the feeding pipe 20 is located at the upper end of the quartz crucible 6;
preferably, the storage cylinders 14 and the material carrying plate 18 and the material carrying plate 19 are fitted with sealing rings therebetween.
One specific application of this embodiment is:
electrically connecting the device with an external power supply, feeding a polycrystalline silicon raw material into the storage barrel 14 through a material injection hole formed in the top of the storage barrel 14, starting a vacuum pump 15 to pump out air in the storage barrel 14, and injecting argon gas into the storage barrel 14 through a second argon gas inlet;
when polycrystalline silicon raw materials need to be put into the furnace body 1, the feeding motor 16 is started, the output end of the feeding motor 16 rotates, the feeding motor 16 drives the central shaft rod 17 to rotate through the fixed connection between the feeding motor 16 and the central shaft rod 17, the central shaft rod 17 drives the material driving plate 18 to rotate through the welded connection between the central shaft rod 17 and the material driving plate 18, the material driving through groove formed in the material driving plate 18 can carry quantitative raw materials to move, when the material driving through groove moves to the position above the feeding pipe 20, the raw materials in the material driving through groove slide down to the inside of the quartz crucible 6 through the feeding pipe 20, continuous feeding can be achieved without stopping the machine, meanwhile, quantitative feeding can be achieved, the production efficiency is improved, and the production cost is reduced;
when production monocrystalline silicon, the first argon gas entry of seting up through heat preservation lid 13 top pours into the argon gas into to furnace body 1's inside into, the argon gas is after the gathering of three lamella formula water conservancy diversion spare 12 surfaces, it blows to monocrystalline silicon to gather a section of thick bamboo 11 through the argon gas, cool off and protect monocrystalline silicon, and then can avoid the argon gas air current to blow to producing the random flow behind the plane, the gathering nature of argon gas has been improved, the argon gas utilization ratio has been improved, avoid causing the waste of argon gas, avoided unusual air current to cause the crystal to send out the abnormal conditions such as various whiting simultaneously, the yields of product has been improved.
In the description herein, references to the description of "one embodiment," "an example," "a specific example" or the like are intended to mean that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the utility model. In this specification, the schematic representations of the terms used above do not necessarily refer to the same embodiment or example. Furthermore, the particular features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples.
The preferred embodiments of the utility model disclosed above are intended to be illustrative only. The preferred embodiments are not exhaustive and do not limit the utility model to the precise embodiments disclosed. Obviously, many modifications and variations are possible in light of the above teaching. The embodiments were chosen and described in order to best explain the principles of the utility model and the practical application, to thereby enable others skilled in the art to best utilize the utility model. The utility model is limited only by the claims and their full scope and equivalents.
Claims (6)
1. A single crystal furnace with an argon guiding function comprises a furnace body (1) and is characterized in that a crucible shaft (2) is fixed at the bottom inside the furnace body (1), a crucible tray (3) is connected to the top of the crucible shaft (2) in a welding mode, a crucible supporting ring (4) is placed at the top of the crucible tray (3), a graphite crucible (5) is placed inside the crucible supporting ring (4), and a quartz crucible (6) is placed inside the graphite crucible (5);
a heat-insulating cylinder (7) is fixed inside the furnace body (1) and outside the crucible tray (3), a heat-insulating felt (8) is assembled between the furnace body (1) and the heat-insulating cylinder (7), a heater (9) is fixed at the lower end inside the heat-insulating cylinder (7), a curing felt (10) is fixed at the upper end inside the heat-insulating cylinder (7), an argon gas gathering cylinder (11) is fixed inside the curing felt (10), and a three-petal flow guide piece (12) is fixed at the top of the argon gas gathering cylinder (11);
the top of the furnace body (1) is rotatably connected with a heat-insulating cover (13) through a hinge, the top of the heat-insulating cover (13) is provided with a first argon inlet, and the outer side of the furnace body (1) is welded and connected with a storage barrel (14);
a second argon inlet, a material injection hole and a vacuum pumping hole are formed in the top of the material storage barrel (14), a vacuum pump (15) and a feeding motor (16) are further fixed to the top of the material storage barrel (14), and the input end of the vacuum pump (15) is connected with the vacuum pumping hole through a pumping pipe;
a central shaft lever (17) is fixed at the output end of the feeding motor (16), the storage cylinders (14) are rotationally connected with the central shaft lever (17), a material carrying plate (18) is welded at the lower end of the outer side of the central shaft lever (17), a plurality of material carrying through grooves are uniformly distributed in the material carrying plate (18), and the storage cylinders (14) are rotationally connected with the material carrying plate (18);
the quartz crucible feeding device is characterized in that a flat material plate (19) is welded to the top, located on a material carrying plate (18), of one end inside the material storage barrel (14), a feeding hole is formed in the bottom of the material storage barrel (14), a feeding pipe (20) is welded inside the feeding hole, and one end of the feeding pipe (20) is located at the upper end of a quartz crucible (6).
2. The single crystal furnace with the argon gas guiding function according to claim 1, wherein the material of the three-petal flow guide member (12) is quartz.
3. The single crystal furnace with the argon gas guiding function according to claim 1, wherein the outer diameter of the upper end of the three-petal type flow guide (12) is 20 mm smaller than the inner diameter of the furnace body (1), and the outer diameter of the lower end of the three-petal type flow guide (12) is equal to the outer diameter of the upper end of the argon gas gathering cylinder (11).
4. The single crystal furnace with the argon gas guiding function as claimed in claim 1, wherein the storage cylinder (14) and the central shaft (17) are rotatably connected through a ball bearing.
5. The single crystal furnace with the argon gas guiding function according to claim 1, wherein a ball guide groove is formed on the outer side of the material carrying plate (18), a ball limiting groove adapted to the ball guide groove is formed in the storage barrel (14), an alloy ball (21) is assembled between the ball guide groove and the ball limiting groove, and the storage barrel (14) and the material carrying plate (18) are rotatably connected through the alloy ball (21).
6. The single crystal furnace with the argon gas guiding function according to claim 1, wherein sealing rings are respectively assembled between the storage cylinder (14) and the material carrying plate (18) and between the material carrying plate (18) and the material plate (19).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202120725912.0U CN215366059U (en) | 2021-04-09 | 2021-04-09 | Single crystal furnace with argon gas direction function |
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| Application Number | Priority Date | Filing Date | Title |
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| CN202120725912.0U CN215366059U (en) | 2021-04-09 | 2021-04-09 | Single crystal furnace with argon gas direction function |
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| CN215366059U true CN215366059U (en) | 2021-12-31 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN116288657A (en) * | 2023-02-04 | 2023-06-23 | 浙江晶阳机电股份有限公司 | Intelligent side feeding device capable of automatically controlling addition amount and feeding method thereof |
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2021
- 2021-04-09 CN CN202120725912.0U patent/CN215366059U/en active Active
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN116288657A (en) * | 2023-02-04 | 2023-06-23 | 浙江晶阳机电股份有限公司 | Intelligent side feeding device capable of automatically controlling addition amount and feeding method thereof |
| CN116288657B (en) * | 2023-02-04 | 2023-10-24 | 浙江晶阳机电股份有限公司 | Intelligent side feeding device capable of automatically controlling addition amount and feeding method thereof |
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