CN215120740U - Hybrid integrated power amplifier circuit adopting DCB substrate - Google Patents
Hybrid integrated power amplifier circuit adopting DCB substrate Download PDFInfo
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- CN215120740U CN215120740U CN202121461689.XU CN202121461689U CN215120740U CN 215120740 U CN215120740 U CN 215120740U CN 202121461689 U CN202121461689 U CN 202121461689U CN 215120740 U CN215120740 U CN 215120740U
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Abstract
A hybrid integrated power amplifier circuit adopting a DCB substrate comprises a thick film substrate and the DCB substrate which are arranged in a tube shell, wherein the thick film substrate is provided with a control circuit, a current limiting circuit and a temperature control circuit, the DCB substrate is provided with a driving circuit, a current detection circuit and a temperature detection circuit, and four output pins of the control circuit are respectively and electrically connected with four MOS tube switches of the driving circuit; two voltage output ends of the driving circuit are respectively and electrically connected with two input pins of the control circuit; the current detection circuit is connected between the drive circuit and the grounding end, and the output end of the current detection circuit is electrically connected with the positive input end of the temperature control circuit; the output end of the temperature detection circuit is electrically connected with the output end of the current detection circuit; the output end of the temperature control circuit is electrically connected with the positive input end of the current limiting circuit; the negative input end of the current limiting circuit is electrically connected with a preset voltage formed by the voltage dividing circuit; the output end of the control circuit is electrically connected with the input pin of the control circuit. The circuit has good heat dissipation effect and has the function of temperature overheat protection.
Description
Technical Field
The utility model relates to a semiconductor hybrid circuit device, in particular to adopt hybrid integrated power amplifier circuit of DCB substrate.
Background
With the development of electronic technology, power amplifier circuits have become one of the most widely used circuits. The power amplifier circuit product in the specific field requires more and more output power, and the heat generated by the product per se is larger, so that a lot of difficulties are brought to the design and the process of the power amplifier circuit, effective heat dissipation area needs to be increased and proper materials are selected in order to meet the power driving capability of the power amplifier circuit, and the heat dissipation of a power amplifier device is facilitated. The common PCB material has limited heat dissipation capacity, and meanwhile, a large amount of space is occupied by the control part of the layout, so that the requirement of miniaturization of the power amplifier circuit is met by a thick film mixing process.
SUMMERY OF THE UTILITY MODEL
The utility model aims to solve the technical problem that a hybrid integrated power amplifier circuit of adoption DCB substrate that radiating effect is good has the overheated protect function of temperature is provided.
In order to achieve the above purpose, the utility model adopts the following technical scheme:
a mixed integrated power amplifier circuit using DCB substrate comprises a tube shell, a thick film substrate and a DCB substrate fixed in the tube shell, a control circuit, a current limiting circuit and a temperature control circuit arranged on the thick film substrate, a drive circuit, a current detection circuit and a temperature detection circuit arranged on the DCB substrate,
the input signal of the control circuit is a TTL voltage signal, and four output pins of the control circuit are respectively and electrically connected with the grids of four MOS tube switches of the drive circuit and are used for converting the input signal into four paths of output signals and respectively controlling the on-off of the four MOS tube switches of the drive circuit;
the driving circuit is an H-bridge circuit formed by four MOS tube switches, two voltage output ends of the H-bridge circuit are respectively and electrically connected with two input pins of the control circuit and used for detecting voltage values of the two voltage output ends of the H-bridge circuit so as to control the gate-source voltage difference of the MOS tube switches of a bridge arm on the H-bridge circuit;
the current detection circuit comprises a sampling resistor and is electrically connected between the H-bridge circuit and a grounding end, and the output end of the current detection circuit is electrically connected with the positive input end of the temperature control circuit and is used for converting a current signal on the H-bridge circuit into a voltage signal and transmitting the voltage signal to the temperature control circuit;
the signal output end of the temperature detection circuit is electrically connected with the output end of the current detection circuit and is used for superposing the detected temperature signal and the current signal and then sending the superposed temperature signal and the superposed current signal into the temperature control circuit;
the temperature control circuit comprises a single power supply instrument amplifier, the output end of the single power supply instrument amplifier is electrically connected with the positive input end of the current limiting circuit, and the temperature control circuit is used for amplifying the superposed temperature signal and current signal and then sending the temperature signal and current signal into the current limiting circuit;
the current limiting circuit comprises a voltage comparator, and the negative input end of the voltage comparator is electrically connected with a preset voltage output end formed by a voltage dividing circuit; the output end of the temperature sensor is electrically connected with an input pin of the control circuit and is used for comparing the temperature signal and the current signal after superposition amplification with a preset voltage and outputting a signal to be fed back to the control circuit.
Preferably, the control circuit comprises a double-precision voltage comparator and a driving chip, and input signals of the control circuit are electrically connected with a group of input ends with opposite phases of two voltage comparators in the double-precision voltage comparator respectively; the other group of input ends with opposite phases of the two voltage comparators in the double-precision voltage comparator are connected in parallel with a preset voltage output end formed by the voltage dividing circuit, and the output ends of the two voltage comparators in the double-precision voltage comparator are respectively and correspondingly connected with two input pins of the driving chip and are used for converting the input signals into two paths of voltage signals with opposite high and low potentials to be transmitted to the driving chip so as to control the cross connection and disconnection of four MOS tube switches of the driving circuit.
More preferably, IRF4710 is used for the MOS transistor switch.
More preferably, the sampling resistor is formed by connecting 12 resistors in parallel.
Further preferably, the temperature detection circuit includes a temperature sensor and a resistor R26, and the temperature sensor and the resistor R26 are connected in series between the 12V power supply and the ground.
More preferably, the single power instrumentation amplifier is AMP 04.
More preferably, the voltage comparator is LM 193.
More preferably, the dual precision voltage comparator employs LM 119.
As a further preferred, the driver chip employs HIP 4081.
The utility model has the advantages that:
1. because the thick film substrate and the DCB substrate are fixed in the tube shell, the control circuit, the current limiting circuit and the temperature control circuit are arranged on the thick film substrate, the driving circuit, the current detection circuit and the temperature detection circuit are arranged on the DCB substrate, and the driving circuit with larger heat productivity is arranged on the DCB substrate, the heat dissipation effect is good, and the heat conductivity coefficient from the substrate to the tube shell can be improved.
2. The temperature signal on the DCB substrate can be detected in real time through a temperature detection circuit arranged on the DCB substrate and transmitted to a temperature control circuit, and the current signal on the driving circuit can be detected through a current detection circuit arranged on the DCB substrate and converted into a voltage signal to be transmitted to the temperature control circuit; the temperature control circuit can amplify the superposed temperature signal and current signal and then send the temperature signal and current signal into the current limiting circuit; the temperature signal and the current signal after superposition amplification are compared with the preset voltage through the current limiting circuit, and the output signal is fed back to the control circuit, so that the temperature overheating protection function can be realized, the temperature on the DCB substrate and the current signal on the driving circuit can be detected in real time, and the on-off of four MOS tube switches of the driving circuit is controlled according to the detected double signals.
Drawings
Fig. 1 is a schematic structural diagram of the present invention.
Fig. 2 is a block diagram of the circuit of the present invention.
Fig. 3 is a schematic circuit diagram of the present invention.
In the figure: the device comprises a tube shell 1, a DCB substrate 2, a thick film substrate 3, a surface-mounted resistor 4, a control circuit 5, a driving circuit 6, a temperature detection circuit 7, a current detection circuit 8, a temperature control circuit 9 and a current limiting circuit 10.
Detailed Description
Reference will now be made in detail to embodiments of the present patent, examples of which are illustrated in the accompanying drawings, wherein like or similar reference numerals refer to the same or similar elements or elements having the same or similar function throughout. The embodiments described below with reference to the drawings are exemplary only for the purpose of explaining the present patent and are not to be construed as limiting the present patent.
As shown in fig. 1-3, the utility model relates to an adopt hybrid integrated power amplifier circuit of DCB substrate, including a tube 1, it is fixed with thick film substrate 3 and DCB substrate 2 to bond side by side in tube 1, is equipped with control circuit 5, current-limiting circuit 10 and temperature control circuit 9 on thick film substrate 3, is equipped with drive circuit 6, current detection circuit 8 and temperature detection circuit 7 on DCB substrate 2.
The input signal of the control circuit 5 is a TTL voltage signal, and four output pins of the control circuit 5 are respectively electrically connected to the gates of the four MOS transistor switches of the driving circuit 6, and are used for converting the input signal into four output signals and respectively controlling the on/off of the four MOS transistor switches of the driving circuit 6.
The control circuit 5 comprises a double-precision voltage comparator U1, a driving chip U2 and peripheral circuits thereof, the double-precision voltage comparator U1 adopts LM119 and is provided with two voltage comparators U1A and U1B, and input signals of the control circuit 5 are respectively and electrically connected with positive input ends of the two voltage comparators U1A and negative input ends of the U1B of the double-precision voltage comparator; the negative input end of a voltage comparator U1A and the positive input end of a voltage comparator U1B of the double-precision voltage comparator are connected in parallel with a preset voltage output end formed by a voltage dividing circuit, the output ends of the two voltage comparators U1A and U1B are respectively connected with two input pins ALI and BLI of a driving chip U2 through gold conduction bands and gold wires in a one-to-one correspondence mode, and the output ends are used for converting the input signals into two paths of voltage signals (12V or 0V) with opposite high and low potentials and transmitting the two paths of voltage signals to the driving chip U2 so as to control the cross connection and disconnection of four MOS tube switches of the driving circuit 6. The driving chip U2 adopts HIP4081, and its four output pins BHO, BLO, ALO and AHO are respectively electrically connected with the gates of the four MOS tube switches Q2-Q5 of the driving circuit 6 through gold conduction bands and gold wires. The peripheral circuit of the control circuit 5 comprises resistors R1-R10, R12-R21, capacitors C1-C6 and diodes D1-D6.
The voltage division circuit comprises resistors R3 and R4 and a capacitor C1, wherein the resistors R4 and R3 are connected between a +12V power supply and a ground end in series, and the capacitor C1 is connected to two ends of the resistor R3 in parallel. The preset voltage output end is arranged between the resistors R3 and R4.
The driving circuit 6 is an H-bridge circuit composed of four MOS tube switches Q2-Q5, two voltage output ends MTA and MTB of the H-bridge circuit are respectively and electrically connected with two input pins BHS and AHS of the driving chip U2 and are used for detecting the voltage values of the two voltage output ends of the H-bridge circuit so as to control the gate-source voltage difference of the MOS tube switches of the upper bridge arm of the H-bridge circuit; the MOS tube switches Q2-Q5 adopt IRF 4710.
The current detection circuit 8 includes a sampling resistor R0 and is electrically connected between a bridge arm loop of the H-bridge circuit and a ground terminal (power ground), and an output terminal of the current detection circuit 8 is electrically connected with a positive input terminal of the temperature control circuit 9 through a conductive tape and a gold wire, and is configured to convert a current signal on the H-bridge circuit into a voltage signal and transmit the voltage signal to the temperature control circuit 9. The sampling resistor R0 is formed by connecting 12 surface-mounted resistors 4 in parallel.
And the signal output end of the temperature detection circuit 7 is electrically connected with the output end of the current detection circuit 8 and is used for superposing the detected temperature signal and the current signal and then sending the superposed temperature signal and the superposed current signal into the temperature control circuit 9. The temperature detection circuit 7 comprises a temperature sensor U5 and a resistor R26, wherein the temperature sensor U5 and the resistor R26 are connected in series between a 12V power supply and a ground terminal. The temperature sensor U5 adopts AD590, and the resistance value of the resistor R26 is far larger than that of the sampling resistor R0.
The temperature control circuit 9 comprises a single power supply instrument amplifier U3, a positive input end of which is electrically connected with the signal output ends of the current detection circuit 8 and the temperature detection circuit 7, a negative input end of which is grounded, and an output end of which is electrically connected with the positive input end of the current limiting circuit 10 through a resistor R23, and is used for amplifying the superposed temperature signal and current signal and then sending the amplified temperature signal and current signal into the current limiting circuit 10; the single power instrumentation amplifier U3 employs AMP 04.
The current limiting circuit 10 comprises a voltage comparator U4, the voltage comparator U4 adopts an LM193, and the negative input end of the voltage comparator U4 is electrically connected with the preset voltage output end formed by the voltage dividing circuit through a resistor R24; the output end of the control circuit is electrically connected with an input pin DIS of a driving chip U2 of the control circuit 5, and the control circuit is used for comparing the temperature signal and the current signal after superposition amplification with a preset voltage and then outputting a signal to be fed back to the driving chip U2 of the control circuit.
When the driving circuit works, a load is electrically connected through the voltage output end MTA and the MTB, an input signal is a TTL voltage signal and enters the double-precision voltage comparator U1, the input signal is compared with a preset voltage formed through the voltage division circuit through the two voltage comparators U1A and U1B of the double-precision voltage comparator U1 to form two paths of voltage signals (12V or 0V) with opposite high and low potentials and transmitted to the driving chip U2, and the driving chip U2 controls the cross connection and disconnection of four MOS tube switches of the driving circuit 6, so that the load is driven to work.
When the load works, the temperature detection circuit 7 can detect the temperature signal on the DCB substrate 2 in real time and transmit the temperature signal to the temperature control circuit 9, and the current detection circuit 8 can detect the current signal of the H-bridge circuit, convert the current signal into a voltage signal and transmit the voltage signal to the temperature control circuit 9; the single power supply instrument amplifier of the temperature control circuit can amplify the superposed temperature signal and current signal by about 50 times and then send the amplified signals into the current limiting circuit 10; the temperature signal and the current signal after superposition amplification are compared with the preset voltage through the current limiting circuit 10, and the output signal is fed back to the driving chip, so that the on-off of four MOS tube switches of the driving circuit is controlled, and the temperature overheating protection function can be realized.
The above, only be the concrete implementation of the preferred embodiment of the present invention, but the protection scope of the present invention is not limited thereto, and any person skilled in the art is in the technical scope of the present invention, according to the technical solution of the present invention and the utility model, the concept of which is equivalent to replace or change, should be covered within the protection scope of the present invention.
Claims (9)
1. A hybrid integrated power amplifier circuit adopting a DCB substrate comprises a tube shell and is characterized in that: a thick film substrate and a DCB substrate are fixed in the tube shell, a control circuit, a current limiting circuit and a temperature control circuit are arranged on the thick film substrate, a driving circuit, a current detection circuit and a temperature detection circuit are arranged on the DCB substrate,
the control circuit is provided with a TTL voltage signal input end, and four output pins of the control circuit are respectively and electrically connected with the grids of the four MOS tube switches of the drive circuit and are used for converting input signals into four paths of output signals and respectively controlling the on-off of the four MOS tube switches of the drive circuit;
the driving circuit is an H-bridge circuit consisting of four MOS tube switches, two voltage output ends of the H-bridge circuit are respectively and electrically connected with two input pins of the control circuit and are used for detecting the voltage values of the two voltage output ends of the H-bridge circuit so as to control the gate-source voltage difference of the MOS tube switches of a bridge arm on the H-bridge circuit;
the current detection circuit comprises a sampling resistor electrically connected between the H-bridge circuit and a grounding end, and the output end of the current detection circuit is electrically connected with the positive input end of the temperature control circuit and is used for converting a current signal on the H-bridge circuit into a voltage signal and transmitting the voltage signal to the temperature control circuit;
the signal output end of the temperature detection circuit is electrically connected with the output end of the current detection circuit and is used for superposing the detected temperature signal and the current signal and then sending the superposed temperature signal and the superposed current signal into the temperature control circuit;
the temperature control circuit comprises a single power supply instrument amplifier, the output end of the single power supply instrument amplifier is electrically connected with the positive input end of the current limiting circuit, and the temperature control circuit is used for amplifying the superposed temperature signal and current signal and then sending the temperature signal and current signal into the current limiting circuit;
the current limiting circuit comprises a voltage comparator, and the negative input end of the voltage comparator is electrically connected with a preset voltage output end formed by a voltage dividing circuit; the output end of the temperature sensor is electrically connected with an input pin of the control circuit and is used for comparing the temperature signal and the current signal after superposition amplification with a preset voltage and outputting a signal to be fed back to the control circuit.
2. The hybrid integrated power amplifier circuit using DCB substrate as claimed in claim 1, wherein: the control circuit comprises a double-precision voltage comparator and a driving chip, and input signals of the control circuit are respectively and electrically connected with a group of input ends with opposite phases of two voltage comparators in the double-precision voltage comparator; the other group of input ends with opposite phases of the two voltage comparators in the double-precision voltage comparator are connected in parallel with a preset voltage output end formed by the voltage dividing circuit, and the output ends of the two voltage comparators in the double-precision voltage comparator are respectively and correspondingly connected with two input pins of the driving chip and are used for converting the input signals into two paths of voltage signals with opposite high and low potentials to be transmitted to the driving chip so as to control the cross connection and disconnection of four MOS tube switches of the driving circuit.
3. A hybrid integrated power amplifier circuit using DCB substrate as claimed in claim 1 or 2, wherein: the MOS tube switch adopts IRF 4710.
4. The hybrid integrated power amplifier circuit using DCB substrate as claimed in claim 1, wherein: the sampling resistor is formed by connecting 12 resistors in parallel.
5. The hybrid integrated power amplifier circuit using DCB substrate as claimed in claim 1, wherein: the temperature detection circuit comprises a temperature sensor and a resistor, and the temperature sensor and the resistor are connected between a 12V power supply and a ground terminal in series.
6. The hybrid integrated power amplifier circuit using DCB substrate as claimed in claim 1, wherein: the single power instrumentation amplifier employs AMP 04.
7. The hybrid integrated power amplifier circuit using DCB substrate as claimed in claim 1, wherein: the voltage comparator employs LM 193.
8. The hybrid integrated power amplifier circuit using DCB substrate as claimed in claim 2, wherein: the dual precision voltage comparator adopts LM 119.
9. The hybrid integrated power amplifier circuit using DCB substrate as claimed in claim 2, wherein: the driver chip adopts HIP 4081.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202121461689.XU CN215120740U (en) | 2021-06-29 | 2021-06-29 | Hybrid integrated power amplifier circuit adopting DCB substrate |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202121461689.XU CN215120740U (en) | 2021-06-29 | 2021-06-29 | Hybrid integrated power amplifier circuit adopting DCB substrate |
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| Publication Number | Publication Date |
|---|---|
| CN215120740U true CN215120740U (en) | 2021-12-10 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202121461689.XU Active CN215120740U (en) | 2021-06-29 | 2021-06-29 | Hybrid integrated power amplifier circuit adopting DCB substrate |
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| Country | Link |
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| CN (1) | CN215120740U (en) |
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- 2021-06-29 CN CN202121461689.XU patent/CN215120740U/en active Active
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