CN215118499U - High-pulse-resistant high-frequency radio-frequency power resistor - Google Patents
High-pulse-resistant high-frequency radio-frequency power resistor Download PDFInfo
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- CN215118499U CN215118499U CN202121661322.2U CN202121661322U CN215118499U CN 215118499 U CN215118499 U CN 215118499U CN 202121661322 U CN202121661322 U CN 202121661322U CN 215118499 U CN215118499 U CN 215118499U
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Abstract
The utility model discloses a resistant high pulse high frequency radio frequency power resistor, which comprises a base bod, the resistance rete, the metal lead wire, and set up the electrode film on the base member, the electrode film includes A face electrode rete, B face electrode rete and side electrode rete, A face electrode rete sets up the upper surface at the base member, B face electrode rete sets up the lower surface at the base member, side electrode rete sets up in the base member side and connects A face electrode rete and B face electrode rete, resistance rete and A face electrode rete overlap joint, resistance rete and the surface covering who connects part with A face electrode rete have glass glaze rete. The utility model relates to a resistive element technical field has solved the shortcoming that the radio frequency power resistor does not endure high pulse frequency for the resistor can tolerate the pulse power of several kilowatts simultaneously in the performance that possess high power and high-frequency channel. The n-type electrode and the bilateral grounding design are adopted, so that the pulse resistance of the resistor is improved. The split resistor design ensures that the resistance values of the two resistor film layers can be accurately measured and controlled during production, and avoids voltage breakdown. The thickened base body prevents the input end and the grounding end from generating flashover.
Description
Technical Field
The utility model belongs to the resistive element field, concretely relates to resistant high pulse high frequency radio frequency power resistor.
Background
With the development of radio frequency technology, a new pulse technology gradually becomes the mainstream technology in radio frequency circuit design due to its unique technical advantages. But the characteristics of high pulse, high frequency and broadband and the like bring brand new challenges to the design of radio frequency circuits and the design of matched components. Most of the existing radio frequency power resistors can only meet the requirement of high-frequency broadband or pulse-resistant power, and the volume of a resistance film layer is required to be large enough to meet the requirement of pulse-resistant power, so that the whole volume of the resistor is also increased. The requirement of satisfying high frequency broadband requires that the whole volume of the resistor is as small as possible, so as to obtain stable impedance and low distribution parameters.
SUMMERY OF THE UTILITY MODEL
An object of the utility model is to provide a resistant high pulse high frequency radio frequency power resistor to solve the problem that the current radio frequency power resistor that proposes in the above-mentioned background can only satisfy high frequency broadband or resistant pulse power requirement.
In order to achieve the above object, the utility model provides a following technical scheme: a high-pulse-resistant high-frequency radio-frequency power resistor comprises a substrate, a resistor film layer, a metal lead wire and an electrode film arranged on the substrate, wherein the electrode film comprises an A-surface electrode film layer, a B-surface electrode film layer and a side electrode film layer, the A-surface electrode film layer is arranged on the upper surface of the substrate and comprises three parts of an n-shaped film, a first strip-shaped film and a second strip-shaped film, the B-surface electrode film layer is arranged on the lower surface of the substrate, the side electrode film layer is arranged on the side surface of the substrate and connected with the A-surface electrode film layer and the B-surface electrode film layer, the resistor film layer comprises a first rectangular resistor film and a second rectangular resistor film, the first rectangular resistor film and the second rectangular resistor film are arranged at two sides of the n-shaped film and are in lap joint with the lap joint end of the A-surface electrode film layer, and the surface of the part connected with the A-surface electrode film layer are covered with a glass glaze film layer, and the upper surface of the base body is also provided with an encapsulation cover plate.
Preferably, the B-side electrode film layer is printed on the whole lower surface of the base body by adopting a silk screen printing process, and the side electrode film layer comprises two parts arranged on the left side surface and the right side surface of the base body and is effectively and electrically connected with the first strip-shaped film and the second strip-shaped film.
Preferably, the metal lead is welded on the n-shaped film by adopting a hot-press welding process, the packaging cover plate is adhered to the upper surface of the base body by adopting a high-temperature-resistant adhesive, and the base body is made of thickened beryllium oxide ceramic.
Preferably, the first strip-shaped film and the second strip-shaped film are arranged at the edge positions of two sides of the upper surface of the substrate, and the n-shaped film is arranged in the middle of the first strip-shaped film and the second strip-shaped film and is positioned in the center of the substrate.
Preferably, the first rectangular resistive film and the second rectangular resistive film are arranged at two sides of the n-shaped film, are positioned on the A-surface electrode film layer, are lapped with the overlapping ends of the n-shaped film, the first strip-shaped film and the second strip-shaped film, and form effective electrical connection.
Compared with the prior art, the utility model provides a resistant high pulse high frequency radio frequency power resistor possesses following beneficial effect:
1. the thickened ceramic substrate ensures that the resistor has enough creepage distance, and avoids the phenomenon that the resistor is broken down by voltage and fails due to flashover generated between a high pulse signal and a ground surface when the high pulse signal passes through an input end. Meanwhile, the thickened ceramic substrate can ensure that the electrode film layer and the resistance film layer which are carried by the ceramic substrate can have enough impedance under the condition of larger volume, thereby avoiding frequency deviation caused by smaller impedance and ensuring the high-frequency and high-bandwidth characteristics of the resistor.
2. The n-type electrode is adopted to be designed and matched with the double-path shunt structure, the input large current is shunted before reaching the resistance film layer and is divided into two paths to pass through, and the problem that the resistance film layer is burnt due to overlarge current is avoided. The difficulty of double-path shunt is how to evenly distribute the current, and the resistance difference of the two resistance film layers can cause the current to be unevenly distributed, thereby increasing the risk of burning one side with high current density. The split resistance film layer design enables the resistance values of the two times to be effectively measured and controlled. Meanwhile, the length of the resistance film layer is enough, and the high voltage of the pulse signal can be dispersed, so that the voltage value in unit length is limited within the rated working voltage of the resistance film layer.
3. And covering the whole resistance film layer and the part thereof connected with the electrode film layer by using glass glaze slurry. The glass in the glass glaze slurry can cover and fill the pores of the resistance film layer and the pores of the n-shaped electrode, the glass isolates the resistance film layer, failure caused by reaction of the resistance and air under the heating condition is avoided, and unexpected flashover between two feet of the n-shaped electrode is avoided due to the insulating characteristic of the glass.
Drawings
The accompanying drawings are included to provide a further understanding of the invention, and are incorporated in and constitute a part of this specification, illustrate embodiments of the invention, and together with the description, do not constitute a limitation of the invention, in which:
fig. 1 is a schematic view of the overall structure of the present invention;
FIG. 2 is a schematic view of the split internal structure of the present invention;
FIG. 3 is a schematic diagram of the present invention with a further split structure;
fig. 4 is a schematic structural view of the base body and the a-side electrode film layer of the present invention.
In the figure: 1. a substrate; 2. a B surface electrode film layer; 3. a side electrode film layer; 4. a surface A electrode film layer; 41. an n-shaped film; 42. a first strip film; 43. a second strip film; 5. a resistance film layer; 51. a first rectangular resistive film; 52. a second rectangular resistive film; 6. a glass glaze film layer; 7. a metal lead; 8. packaging the cover plate;
Detailed Description
The technical solutions in the embodiments of the present invention will be described clearly and completely with reference to the accompanying drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only some embodiments of the present invention, not all embodiments. Based on the embodiments in the present invention, all other embodiments obtained by a person skilled in the art without creative work belong to the protection scope of the present invention.
In the description of the present invention, it should be noted that the terms "upper", "lower", "left", "right", "inner", "outer", "both ends", "one end", "the other end", and the like indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings, and are only for convenience of description and simplification of description, but do not indicate or imply that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and thus, should not be construed as limiting the present invention. Furthermore, the terms "first" and "second" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance.
In the description of the present invention, it is to be noted that, unless otherwise explicitly specified or limited, the terms "mounted," "disposed," "connected," and the like are to be construed broadly, and for example, "connected" may be a fixed connection, a detachable connection, or an integral connection; can be mechanically or electrically connected; they may be connected directly or indirectly through intervening media, or they may be interconnected between two elements. The specific meaning of the above terms in the present invention can be understood in specific cases to those skilled in the art.
Referring to fig. 1-4, the present invention provides a technical solution:
a high-pulse-resistant high-frequency radio-frequency power resistor comprises a substrate 1, a resistor film layer 5, a metal lead 7 and an electrode film arranged on the substrate, wherein the electrode film comprises an A-surface electrode film layer 4, a B-surface electrode film layer 2 and a side electrode film layer 3, the A-surface electrode film layer 4 is arranged on the upper surface of the substrate 1 and comprises three parts, namely an n-shaped film 41, a first strip-shaped film 42 and a second strip-shaped film 43, the B-surface electrode film layer 2 is arranged on the lower surface of the substrate 1, the side electrode film layer 3 is arranged on the side surface of the substrate 1 and connected with the A-surface electrode film layer 4 and the B-surface electrode film layer 2, the resistor film layer 5 comprises a first rectangular resistor film 51 and a second rectangular resistor film 52, the first rectangular resistor film 51 and the second rectangular resistor film 52 are arranged at two sides of the n-shaped film 41 and overlapped with the A-surface electrode film layer 4, the surfaces of the resistor film layer 5 and the part connected with the A-surface electrode film layer 4 are covered with a glass glaze film layer 6, and the upper surface of the base body 1 is also provided with a packaging cover plate 8.
Specifically, the B-side electrode film layer 2 is printed on the entire lower surface of the base 1 by a screen printing process, and the side electrode film layer 3 includes two portions disposed on the left and right sides of the base 1, and is electrically connected to the first strip-shaped film 42 and the second strip-shaped film 43.
Specifically, the metal lead 7 is welded on the n-shaped film 41 by adopting a hot-press welding process, the packaging cover plate 8 is adhered on the upper surface of the base body 1 by adopting a high-temperature-resistant adhesive, and the base body 1 is made of thickened beryllium oxide ceramic.
Specifically, the first strip-shaped film 42 and the second strip-shaped film 43 are disposed at both side edge positions of the upper surface of the base 1, and the n-shaped film 41 is disposed at the center of the base 1 at the intermediate position between the first strip-shaped film 42 and the second strip-shaped film 43.
Specifically, the first and second rectangular resistive films 51 and 52 are disposed on both sides of the n-shaped film 41, on the a-plane electrode film layer 4, overlap the overlapping ends of the n-shaped film 41, the first strip film 42, and the second strip film 43, and form an effective electrical connection.
As shown in the figure, the utility model discloses a include base member 1, B face electrode rete 2, side electrode rete 3, A face electrode rete 4, resistance rete 5, glass glaze rete 6, metal lead 7, encapsulation apron 8. The substrate 1 is made of thickened beryllium oxide ceramic; the B-side electrode film layer 2 is printed on the whole lower surface of the substrate 1 by adopting a silk screen printing process, the A-side electrode film layer 4 (comprising an n-shaped film 41, a first strip-shaped film 42 and a second strip-shaped film 43) comprises a first strip-shaped film 42 and a second strip-shaped film 43 which are arranged at the edge positions of two sides of the upper surface of the substrate 1, the n-shaped film 41 is arranged at the middle position of the first strip-shaped film 42 and the second strip-shaped film 43 and is positioned at the center of the substrate 1, a side electrode film layer 3 is arranged at the side surface of the substrate 1 and is connected with the A-side electrode film layer 4 and the B-side electrode film layer 2, and the resistance film layer 5 (comprising a first rectangular resistance film 51 and a second rectangular resistance film 52) is arranged at the two side positions of the n-shaped film 41 and is positioned above the A-side electrode film layer 4 and is lapped with the overlapping ends of the n-shaped film 41, the first strip-shaped film 42 and the second strip-shaped film 43 to form effective electrical connection; the surface of the resistance film layer 5 and the connection part of the resistance film layer and the A-surface electrode film layer 4 is covered with a glass glaze film layer 6, a metal lead 7 is welded on the n-shaped film 41 by adopting a hot pressure welding process, and a packaging cover plate 8 is adhered on the upper surface of the base body 1 by adopting a high-temperature resistant adhesive.
The thickened ceramic substrate ensures that the resistor has enough creepage distance, and avoids the phenomenon that the resistor is broken down by voltage and fails due to flashover generated between a high pulse signal and a ground surface when the high pulse signal passes through an input end. Meanwhile, the thickened ceramic substrate can ensure that the electrode film layer and the resistance film layer which are carried by the ceramic substrate can have enough impedance under the condition of larger volume, thereby avoiding frequency deviation caused by smaller impedance and ensuring the high-frequency and high-bandwidth characteristics of the resistor.
The n-type electrode is adopted to be designed and matched with the double-path shunt structure, the input large current is shunted before reaching the resistance film layer and is divided into two paths to pass through, and the problem that the resistance film layer is burnt due to overlarge current is avoided. The difficulty of double-path shunt is how to evenly distribute the current, and the resistance difference of the two resistance film layers can cause the current to be unevenly distributed, thereby increasing the risk of burning one side with high current density. The split resistance film layer design enables the resistance values of the two times to be effectively measured and controlled. Meanwhile, the length of the resistance film layer is enough, and the high voltage of the pulse signal can be dispersed, so that the voltage value in unit length is limited within the rated working voltage of the resistance film layer.
And covering the whole resistance film layer and the part thereof connected with the electrode film layer by using glass glaze slurry. The glass in the glass glaze slurry can cover and fill the pores of the resistance film layer and the pores of the n-shaped electrode, the glass isolates the resistance film layer, failure caused by reaction of the resistance and air under the heating condition is avoided, and unexpected flashover between two feet of the n-shaped electrode is avoided due to the insulating characteristic of the glass.
Although embodiments of the present invention have been shown and described, it will be appreciated by those skilled in the art that changes, modifications, substitutions and alterations can be made in these embodiments without departing from the principles and spirit of the invention, the scope of which is defined in the appended claims and their equivalents.
Claims (5)
1. The utility model provides a resistant high pulse high frequency radio frequency power resistor, includes base member (1), resistance rete (5), metal lead (7) to and the electrode film of setting on the base member, its characterized in that: the electrode film comprises an A-surface electrode film layer (4), a B-surface electrode film layer (2) and a side electrode film layer (3), the A-surface electrode film layer (4) is arranged on the upper surface of a base body (1) and comprises three parts, namely an n-shaped film (41), a first strip-shaped film (42) and a second strip-shaped film (43), the B-surface electrode film layer (2) is arranged on the lower surface of the base body (1), the side electrode film layer (3) is arranged on the side surface of the base body (1) and connected with the A-surface electrode film layer (4) and the B-surface electrode film layer (2), the resistor film layer (5) comprises a first rectangular resistor film (51) and a second rectangular resistor film (52), the first rectangular resistor film (51) and the second rectangular resistor film (52) are arranged at the positions on the two sides of the n-shaped film (41) and are in lap joint with the A-surface electrode film layer (4), and the surface of the resistor film layer (5) and the part connected with the A-surface electrode film layer (4) is covered with a glass glaze film layer (6), and the upper surface of the base body (1) is also provided with an encapsulation cover plate (8).
2. The high pulse tolerant high frequency rf power resistor of claim 1, wherein: the B-side electrode film layer (2) is printed on the whole lower surface of the base body (1) by adopting a silk screen printing process, and the side electrode film layer (3) comprises two parts arranged on the left side surface and the right side surface of the base body (1) and is effectively and electrically connected with the first strip-shaped film (42) and the second strip-shaped film (43).
3. The high pulse tolerant high frequency rf power resistor of claim 1, wherein: the metal lead (7) is welded on the n-shaped film (41) by adopting a hot-press welding process, the packaging cover plate (8) is adhered to the upper surface of the base body (1) by adopting a high-temperature-resistant adhesive, and the base body (1) is made of thickened beryllium oxide ceramic.
4. The high pulse tolerant high frequency rf power resistor of claim 1, wherein: the first strip-shaped film (42) and the second strip-shaped film (43) are arranged at the edge positions of two sides of the upper surface of the base body (1), and the n-shaped film (41) is arranged in the middle of the first strip-shaped film (42) and the second strip-shaped film (43) and is positioned in the center of the base body (1).
5. The high pulse tolerant high frequency rf power resistor of claim 1, wherein: the first rectangular resistive film (51) and the second rectangular resistive film (52) are arranged at two sides of the n-shaped film (41), are positioned on the electrode film layer (4) on the A surface, are lapped with the lapping ends of the n-shaped film (41), the first strip-shaped film (42) and the second strip-shaped film (43), and form effective electrical connection.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202121661322.2U CN215118499U (en) | 2021-07-21 | 2021-07-21 | High-pulse-resistant high-frequency radio-frequency power resistor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202121661322.2U CN215118499U (en) | 2021-07-21 | 2021-07-21 | High-pulse-resistant high-frequency radio-frequency power resistor |
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| Publication Number | Publication Date |
|---|---|
| CN215118499U true CN215118499U (en) | 2021-12-10 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202121661322.2U Active CN215118499U (en) | 2021-07-21 | 2021-07-21 | High-pulse-resistant high-frequency radio-frequency power resistor |
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| Country | Link |
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| CN (1) | CN215118499U (en) |
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2021
- 2021-07-21 CN CN202121661322.2U patent/CN215118499U/en active Active
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