CN215118500U - Low-decibel high-power impact-resistant radio frequency power attenuator - Google Patents
Low-decibel high-power impact-resistant radio frequency power attenuator Download PDFInfo
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- CN215118500U CN215118500U CN202121661326.0U CN202121661326U CN215118500U CN 215118500 U CN215118500 U CN 215118500U CN 202121661326 U CN202121661326 U CN 202121661326U CN 215118500 U CN215118500 U CN 215118500U
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Abstract
The utility model discloses a high-power type radio frequency power attenuator that shocks resistance of low decibel, including base member, resistance rete, metal lead wire to and the electrode film of setting on the base member, the electrode film includes A face electrode rete, B face electrode rete and side electrode rete, A face electrode rete sets up the upper surface at the base member, the lower surface of base member is provided with B face electrode rete, the base member side is provided with side electrode rete, the resistance rete includes input rectangle resistance film, output rectangle resistance film, bar resistance film, set up in the base member upper surface and with A face electrode rete overlap joint end overlap joint. The utility model relates to a resistance element technical field has solved traditional attenuator and can not bear the shortcoming of surge power to promoted the power capacity in the unit area, both improved attenuator rated power and made the attenuator bear the ability of surge power stronger when guaranteeing attenuator frequency characteristic, strengthened the reliability of attenuator greatly.
Description
Technical Field
The utility model relates to a resistive element technical field, concretely relates to high-power type radio frequency power attenuator that shocks resistance of low decibel.
Background
The attenuator is a widely used dual-channel power absorption element, the internal structure of the attenuator is a circuit formed by combining three resistors, and the attenuator can be matched with a back-end circuit in a device and a complete machine to achieve an expected power absorption target.
With the development of high-energy physical technology, the power requirements for power devices are higher and higher, and then the power bearing requirements for absorption loads in which power absorption is performed are higher and higher. The device is limited by the circuit layout and the space structure inside the device, a lot of scattered residual space cannot be utilized, the effective space reserved for the power absorption load is not sufficient, and the absorption load of a single substrate cannot meet the power absorption requirement. The attenuator can just effectively utilize the residual space inside the device and is matched with an absorption load to achieve the purpose of power absorption. However, the conventional attenuator is limited by the arrangement of the attenuation structure, the effective area of the substrate is not sufficiently utilized, the power absorption capacity is not strong all the time, and the impact of the surge type input signal cannot be borne. Therefore, an attenuator with large power capacity and surge impact resistance is urgently needed to meet the use of power devices in the high-energy physical field.
SUMMERY OF THE UTILITY MODEL
An object of the utility model is to provide a high-power type radio frequency power attenuator that shocks resistance of low decibel can solve the problem that traditional attenuator power capacity is not enough and input signal burns out easily when having the surge.
In order to achieve the above object, the utility model provides a following technical scheme: the utility model provides a high-power type radio frequency power attenuator that shocks resistance of low decibel, includes base member, resistance rete, metal lead to and the electrode film of setting on the base member, the electrode film includes A face electrode rete, B face electrode rete and side electrode rete, A face electrode rete sets up the upper surface at the base member, the lower surface of base member is provided with B face electrode rete, the base member side is provided with side electrode rete, A face electrode rete and B face electrode rete are connected to side electrode rete, the resistance rete includes input rectangle resistance film, output rectangle resistance film, bar resistance film, the resistance rete sets up in the base member upper surface and with A face electrode rete overlap joint end overlap joint, the surface covering of resistance rete has the protection rete, the base member upper surface is provided with the encapsulation apron.
Preferably, the B-side electrode film layer is printed on the entire lower surface of the substrate by screen printing, and the a-side electrode film layer includes a first bar-shaped electrode film, a second bar-shaped electrode film, a third bar-shaped electrode film, a fourth bar-shaped electrode film and an H-shaped electrode film at the center of the substrate.
Preferably, the resistance film layer is printed on the upper surface of the base body by adopting a silk screen printing process, and the resistance film layer is effectively and electrically connected with the A-face electrode film layer.
Preferably, the metal lead comprises a first metal lead and a second metal lead, the metal lead is welded on the electrode film layer on the surface A by adopting a hot-press welding process, the packaging cover plate is adhered to the upper surface of the base body by adopting a high-temperature-resistant adhesive, and the base body is made of beryllium oxide ceramic.
Preferably, the first, second, third and fourth electrode films are disposed at peripheral positions on the periphery of the upper surface of the base, and the side electrode film layers are electrically connected to the second and fourth electrode films in an effective manner.
Preferably, the input end rectangular resistive film and the output end rectangular resistive film are two vertical rectangular films with the same shape and different sizes, the strip-shaped resistive film is a vertical strip-shaped film, the input end rectangular resistive film and the output end rectangular resistive film are positioned on two sides of the H-shaped electrode film and are effectively and electrically connected with the H-shaped electrode film, the first strip-shaped electrode film and the third strip-shaped electrode film, and the strip-shaped resistive film is arranged in the center of the substrate, penetrates through the H-shaped electrode film and is effectively and electrically connected with the H-shaped electrode film, the second strip-shaped electrode film and the fourth strip-shaped electrode film.
Compared with the prior art, the utility model provides a high-power type radio frequency power attenuator that shocks resistance of low decibel possesses following beneficial effect:
the utility model discloses a distributed circuit layout structure distributes the form that 3 required resistances pass through two kinds of rectangle resistive films and a bar resistive film in the attenuation structure at the base member upper surface, shifts the heat source for the triplex of dispersion from partly concentrating, has reduced the heat effectively and has piled up for each partial temperature of attenuator base member is more balanced, and whole radiating effect obviously promotes, and the endurance ability obviously increases.
The attenuator is a resistor network formed by three internal resistors to achieve the purpose of attenuating passing power, two resistors in the three resistors have the same resistance value and are called as 2R, and the rest resistor is called as 1R. In the low-decibel T-shaped attenuation structure, the difference between the resistance value of 2R and the resistance value of 1R can reach more than 10 times. If the difference of the sheet resistances of the 2R and 1R resistive films is far lower than the difference of the resistance values of the resistive films, the attenuation precision deviation of the attenuator is very large, the attenuation fluctuation of the passing power is very large, and the normal use of the rear-end circuit is seriously influenced, so that the device and the whole machine cannot meet the set use requirements.
The utility model discloses a H shape electrode film will form 1R's resistive film control and put the bar membrane for erecting, forms 2R's resistive film control and puts the rectangular membrane for erecting, has reduced the difference of its resistance difference and square resistance difference for the attenuation accuracy deviation of attenuator reaches operation requirement. Meanwhile, the effective space of the substrate is fully utilized, the effective area of the resistive film is increased, the voltage and current resistance capability is improved, the power capacity is increased, and the power resistance capability of the attenuator is improved.
Due to the structure of the attenuator, when power passes through, the power absorbed by the three resistors inside the attenuator is different, the power absorbed by the resistor close to the input end is higher than that absorbed by the resistor close to the output end, and the phenomenon is aggravated as the attenuation decibel is increased.
The utility model discloses an asymmetric resistance rete design has both guaranteed that two resistance side resistances are the same, can once only print when manufacturing and accomplish, has increased the effective area who is close to input resistance again for anti-surge ability obtains effective reinforcing.
Drawings
The accompanying drawings are included to provide a further understanding of the invention, and are incorporated in and constitute a part of this specification, illustrate embodiments of the invention, and together with the description, do not constitute a limitation of the invention, in which:
fig. 1 is a schematic view of the overall structure of the present invention;
FIG. 2 is a schematic view of the split internal structure of the present invention;
FIG. 3 is a schematic diagram of the present invention with a further split structure;
fig. 4 is a schematic structural view of the a-side electrode film layer of the present invention;
fig. 5 is a schematic structural diagram of the resistor film layer of the present invention.
In the figure: 1. a substrate; 2. a B surface electrode film layer; 3. a side electrode film layer; 4. a surface A electrode film layer; 41. a first striped electrode film; 42. a second strip electrode film; 43. a third strip-shaped electrode film; 44. a fourth strip electrode film; 45. an H-shaped electrode film; 5. a resistance film layer; 51. an input end rectangular resistive film; 52. an output end rectangular resistive film; 53. a strip-shaped resistive film; 6. a protective film layer; 71. a first metal lead; 72. a second metal lead; 8. and (6) packaging the cover plate.
Detailed Description
The technical solutions in the embodiments of the present invention will be described clearly and completely with reference to the accompanying drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only some embodiments of the present invention, not all embodiments. Based on the embodiments in the present invention, all other embodiments obtained by a person skilled in the art without creative work belong to the protection scope of the present invention.
In the description of the present invention, it should be noted that the terms "upper", "lower", "inner", "outer", "front end", "rear end", "both ends", "one end", "the other end" and the like indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings, and are only for convenience of description and simplification of description, but do not indicate or imply that the device or element to which the reference is made must have a specific orientation, be constructed in a specific orientation, and be operated, and thus, should not be construed as limiting the present invention. Furthermore, the terms "first" and "second" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance.
In the description of the present invention, it is to be noted that, unless otherwise explicitly specified or limited, the terms "mounted," "disposed," "connected," and the like are to be construed broadly, and for example, "connected" may be a fixed connection, a detachable connection, or an integral connection; can be mechanically or electrically connected; they may be connected directly or indirectly through intervening media, or they may be interconnected between two elements. The specific meaning of the above terms in the present invention can be understood in specific cases to those skilled in the art.
Referring to fig. 1-5, the present invention provides a technical solution:
the utility model provides a high-power type radio frequency power attenuator that shocks resistance of low decibel, including base member 1, resistance film layer 5, the metal lead, and the electrode film of setting on base member 1, the electrode film includes A face electrode rete 4, B face electrode rete 2 and side electrode rete 3, A face electrode rete 4 sets up the upper surface at base member 1, the lower surface of base member 1 is provided with B face electrode rete 2, base member 1 side is provided with side electrode rete 3, A face electrode rete 4 and B face electrode rete 2 are connected to side electrode rete 3, resistance film layer 5 includes input rectangle resistance film 51, output rectangle resistance film 52, bar resistance film 53, resistance film layer 5 sets up in base member 1 upper surface and overlaps and holds the overlap joint with A face electrode rete 4, the surface covering of resistance film layer 5 has protection film layer 6, base member 1 upper surface is provided with encapsulation apron 8.
Specifically, the B-side electrode film layer 2 is printed on the entire lower surface of the base body 1 by screen printing, and the a-side electrode film layer 4 includes a first strip-shaped electrode film 41, a second strip-shaped electrode film 42, a third strip-shaped electrode film 43, a fourth strip-shaped electrode film 44, and an H-shaped electrode film 45 located at the center of the base body 1.
Specifically, the resistance film layer 5 is printed on the upper surface of the substrate 1 by adopting a silk screen printing process, and the resistance film layer 5 and the A-surface electrode film layer 4 form effective electrical connection.
Specifically, the metal leads include a first metal lead 71 and a second metal lead 72, the metal leads are welded on the electrode film layer 4 on the surface a by adopting a hot-press welding process, the package cover plate 8 is adhered on the upper surface of the base body 1 by adopting a high-temperature-resistant adhesive, and the base body 1 is made of beryllium oxide ceramic.
Specifically, the first, second, third, and fourth stripe electrode films 41, 42, 43, and 44 are provided at peripheral positions on the periphery of the upper surface of the base 1, and the side electrode film layers 3 are electrically connected to the second and fourth stripe electrode films 42 and 44.
Specifically, the input end rectangular resistive film 51 and the output end rectangular resistive film 52 are two vertical rectangular films with the same shape and different sizes, the bar-shaped resistive film 53 is a vertical bar-shaped film, the input end rectangular resistive film 51 and the output end rectangular resistive film 52 are located on two sides of the H-shaped electrode film 45 and are electrically connected with the H-shaped electrode film 45, the first bar-shaped electrode film 41 and the third bar-shaped electrode film 43 effectively, and the bar-shaped resistive film 53 is arranged in the center of the substrate 1, penetrates through the H-shaped electrode film 45 and is electrically connected with the H-shaped electrode film 45, the second bar-shaped electrode film 42 and the fourth bar-shaped electrode film 44 effectively.
As shown in the figure, the utility model discloses a including base member 1, B face electrode rete 2, side electrode rete 3, A face electrode rete 4, resistance rete 5, protection rete 6, metal lead wire, encapsulation apron 8. The substrate 1 is made of beryllium oxide ceramic, the B-surface electrode film layer 2 is printed on the whole lower surface of the substrate 1 in a covering manner by adopting a silk screen printing process, the A-surface electrode film layer 4 (comprising a first strip-shaped electrode film 41, a second strip-shaped electrode film 42, a third strip-shaped electrode film 43, a fourth strip-shaped electrode film 44 and an H-shaped electrode film 45) is arranged on the upper surface of the substrate 1, the side-surface electrode film layer 3 is used for connecting the A-surface electrode film layer 4 and the B-surface electrode film layer 2 on the side surface of the substrate 1, the resistor film layer 5 (comprising an input end rectangular resistor film 51, an output end rectangular resistor film 52 and a strip-shaped resistor film 53) is printed on the upper surface of the substrate 1 by adopting the silk screen printing process and is lapped with the overlapping end of the A-surface electrode film layer 4 to form effective electrical connection, the protective film layer 6 covers the whole resistor film layer 5 to protect the resistor film layer 5 from thermal breakdown and physical damage in the using process, and the metal lead (comprising a first metal lead 71, a second lead 45 and a third lead, The second metal lead 72) is welded on the electrode film layer 4 on the surface A by adopting a hot-press welding process, and the packaging cover plate 8 is adhered on the upper surface of the base body 1 by adopting a high-temperature resistant adhesive.
By adopting a distributed circuit layout structure, 3 resistors needed in the attenuation structure are distributed on the upper surface of the base body 1 in the form of two rectangular resistive films and one strip-shaped resistive film, a heat source is transferred from one concentrated part to three dispersed parts, heat accumulation is effectively reduced, the temperature of each part of the base body of the attenuator is more balanced, the integral heat dissipation effect is obviously improved, and the power resistance is obviously improved.
The attenuator is a resistor network formed by three internal resistors to achieve the purpose of attenuating passing power, two resistors in the three resistors have the same resistance value and are called as 2R, and the rest resistor is called as 1R. In the low-decibel T-shaped attenuation structure, the difference between the resistance value of 2R and the resistance value of 1R can reach more than 10 times. If the difference of the sheet resistances of the 2R and 1R resistive films is far lower than the difference of the resistance values of the resistive films, the attenuation precision deviation of the attenuator is very large, the attenuation fluctuation of the passing power is very large, and the normal use of the rear-end circuit is seriously influenced, so that the device and the whole machine cannot meet the set use requirements.
The resistance film forming 1R is controlled to be a vertical strip-shaped film through the H-shaped electrode film 45, the resistance film forming 2R is controlled to be a vertical rectangular film, the difference value between the resistance value difference and the sheet resistance difference is reduced, and the attenuation precision deviation of the attenuator meets the use requirement. Meanwhile, the effective space of the substrate 1 is fully utilized, the effective area of the resistive film is increased, the voltage and current resistance capability is improved, the power capacity is increased, and the power resistance capability of the attenuator is improved.
Due to the structure of the attenuator, when power passes through, the power absorbed by the three resistors inside the attenuator is different, the power absorbed by the resistor close to the input end is higher than that absorbed by the resistor close to the output end, and the phenomenon is aggravated as the attenuation decibel is increased.
By adopting the design of the asymmetric resistance film layer, the square resistances of the two resistors are ensured to be the same, the printing can be completed at one time during production and manufacturing, and the effective area close to the input end resistor is increased, so that the anti-surge capacity is effectively enhanced.
Although embodiments of the present invention have been shown and described, it will be appreciated by those skilled in the art that changes, modifications, substitutions and alterations can be made in these embodiments without departing from the principles and spirit of the invention, the scope of which is defined in the appended claims and their equivalents.
Claims (6)
1. The utility model provides a high-power type radio frequency power attenuator that shocks resistance of low decibel, includes base member (1), resistance rete (5), metal lead to and set up the electrode film on base member (1), its characterized in that: the electrode film comprises an A-surface electrode film layer (4), a B-surface electrode film layer (2) and a side electrode film layer (3), the A-surface electrode film layer (4) is arranged on the upper surface of the base body (1), the B-surface electrode film layer (2) is arranged on the lower surface of the base body (1), the side surface of the substrate (1) is provided with a side electrode film layer (3), the side electrode film layer (3) is connected with an A surface electrode film layer (4) and a B surface electrode film layer (2), the resistance film layer (5) comprises an input end rectangular resistance film (51), an output end rectangular resistance film (52) and a strip-shaped resistance film (53), the resistance film layer (5) is arranged on the upper surface of the base body (1) and is lapped with the lapping end of the A-surface electrode film layer (4), the surface of the resistance film layer (5) is covered with a protective film layer (6), and the upper surface of the base body (1) is provided with a packaging cover plate (8).
2. A low decibel high power impact resistant rf power attenuator as defined in claim 1, wherein: the surface B electrode film layer (2) is printed on the whole lower surface of the base body (1) in a covering mode through a silk screen printing process, and the surface A electrode film layer (4) comprises a first strip-shaped electrode film (41), a second strip-shaped electrode film (42), a third strip-shaped electrode film (43) and a fourth strip-shaped electrode film (44) which are arranged at the edge position of the upper surface of the base body (1) and an H-shaped electrode film (45) located at the center position of the base body (1).
3. A low decibel high power impact resistant rf power attenuator as defined in claim 1, wherein: the resistance film layer (5) is printed on the upper surface of the base body (1) by adopting a silk screen printing process, and the resistance film layer (5) and the A-surface electrode film layer (4) form effective electrical connection.
4. A low decibel high power impact resistant rf power attenuator as defined in claim 1, wherein: the metal lead comprises a first metal lead (71) and a second metal lead (72), the metal lead is welded on the electrode film layer (4) on the surface A by adopting a hot-press welding process, the packaging cover plate (8) is adhered to the upper surface of the base body (1) by adopting a high-temperature-resistant adhesive, and the base body (1) is made of beryllium oxide ceramic.
5. A low decibel high power impact resistant rf power attenuator as defined in claim 2, wherein: the first strip-shaped electrode film (41), the second strip-shaped electrode film (42), the third strip-shaped electrode film (43) and the fourth strip-shaped electrode film (44) are arranged at the peripheral positions of the periphery of the upper surface of the base body (1), and the side electrode film layer (3) is effectively and electrically connected with the second strip-shaped electrode film (42) and the fourth strip-shaped electrode film (44).
6. A low decibel high power impact resistant rf power attenuator as defined in claim 3, wherein: the input end rectangular resistive film (51) and the output end rectangular resistive film (52) are two vertical rectangular films with the same shape and different sizes, the strip-shaped resistive film (53) is a vertical strip-shaped film, the input end rectangular resistive film (51) and the output end rectangular resistive film (52) are located on two sides of the H-shaped electrode film (45) and are effectively and electrically connected with the H-shaped electrode film (45), the first strip-shaped electrode film (41) and the third strip-shaped electrode film (43), and the strip-shaped resistive film (53) is arranged at the center of the base body (1), penetrates through the H-shaped electrode film (45) and is effectively and electrically connected with the H-shaped electrode film (45), the second strip-shaped electrode film (42) and the fourth strip-shaped electrode film (44).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202121661326.0U CN215118500U (en) | 2021-07-21 | 2021-07-21 | Low-decibel high-power impact-resistant radio frequency power attenuator |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202121661326.0U CN215118500U (en) | 2021-07-21 | 2021-07-21 | Low-decibel high-power impact-resistant radio frequency power attenuator |
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| Publication Number | Publication Date |
|---|---|
| CN215118500U true CN215118500U (en) | 2021-12-10 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202121661326.0U Active CN215118500U (en) | 2021-07-21 | 2021-07-21 | Low-decibel high-power impact-resistant radio frequency power attenuator |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN215118500U (en) |
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2021
- 2021-07-21 CN CN202121661326.0U patent/CN215118500U/en active Active
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