CN214798176U

CN214798176U - Semiconductor laser packaging structure

Info

Publication number: CN214798176U
Application number: CN202121412286.6U
Authority: CN
Inventors: 李适宇; 许超; 鲍锋辉
Original assignee: Xi'an Jiahe Chaoyi Photoelectric Technology Co ltd
Current assignee: Xi'an Jiahe Chaoyi Photoelectric Technology Co ltd
Priority date: 2021-06-24
Filing date: 2021-06-24
Publication date: 2021-11-19
Anticipated expiration: 2031-06-24

Abstract

A semiconductor laser package structure comprising: the laser chip comprises a heat sink, a ceramic substrate and a laser chip, wherein the heat sink is provided with an installation groove; the ceramic substrate is arranged in the mounting groove, a first conducting layer and a second conducting layer are arranged on one surface, away from the heat sink, of the ceramic substrate, and the first conducting layer and the second conducting layer are arranged at intervals; the laser chip is arranged on one of the first conducting layer and the second conducting layer, the other one of the first conducting layer and the second conducting layer is electrically connected with the laser chip, and a heat dissipation layer is arranged on the surface of the laser chip. Through having seted up the mounting groove on heat sink, can be used for holding and place ceramic substrate and laser chip, the heat that produces in the laser chip course of operation also can be through heat sink in deriving external environment fast, laser chip's surface is provided with the heat dissipation layer, is favorable to in time deriving the heat that produces fast, has improved heat dispersion greatly, can effectively avoid laser chip during operation high temperature, avoids laser chip to burn out, has improved performance stability and life.

Description

Semiconductor laser packaging structure

Technical Field

The utility model relates to a laser instrument technical field, in particular to semiconductor laser packaging structure.

Background

The semiconductor laser is one of the lasers, and has the characteristics of small volume, light weight, low voltage, large power and the like, so the semiconductor laser is widely applied to optical fiber communication, photoelectric integration, optical disc storage, pumping light sources, atmospheric environment detection, trace toxic gas analysis, molecular spectroscopy and the like, is closely related to human life, and brings great convenience to the life of people.

However, when the semiconductor laser is used in some special fields, there is a higher requirement for the output power of the semiconductor laser, and the semiconductor laser is used under high power, but at the same time, the temperature of the active region of the semiconductor laser during operation is increased, the temperature of the semiconductor laser during operation has a significant influence on the threshold current density, slope efficiency, spectral stability, etc., and overheating of the light emitting region causes damage to the cavity surface of the light emitting region and even degradation of the device, which finally causes failure of the device.

SUMMERY OF THE UTILITY MODEL

In view of the above, it is necessary to provide a semiconductor laser package structure.

The utility model provides an above-mentioned technical problem's technical scheme as follows: a semiconductor laser package structure comprising:

the heat sink is provided with a mounting groove;

the ceramic substrate is arranged in the mounting groove, a first conducting layer and a second conducting layer are arranged on one surface, far away from the heat sink, of the ceramic substrate, and the first conducting layer and the second conducting layer are arranged at intervals; and

the laser chip is electrically connected with the first conducting layer and the second conducting layer respectively, the laser chip is arranged on one of the first conducting layer and the second conducting layer, and a heat dissipation layer is arranged on the surface of the laser chip.

In one embodiment, the laser chip further includes a metal wire, the laser chip is disposed on the first conductive layer, an electrode is disposed on a surface of the heat dissipation layer away from the laser chip, the electrode is electrically connected to the laser chip, one end of the metal wire is connected to the electrode, and the other end of the metal wire is connected to the second conductive layer.

In one embodiment, the laser chip further includes a conductive wire body, the laser chip is disposed on the second conductive layer, a metal plating layer is disposed on a surface of the heat dissipation layer away from the laser chip, the metal plating layer is electrically connected to the laser chip, one end of the conductive wire body is connected to the metal plating layer, and the other end of the conductive wire body is connected to the first conductive layer.

In one embodiment, the heat dissipation layer includes a heat dissipation core layer and a heat dissipation base layer, the heat dissipation base layer is wrapped outside the heat dissipation core layer, and the heat dissipation base layer is connected with the surface of the laser chip.

In one embodiment, the heat sink core layer includes at least one of an aluminum silicon carbide layer, an aluminum carbon layer, and an aluminum silicon layer.

In one embodiment, the heat dissipation base layer is an alloy layer.

In one embodiment, a copper-gold alloy layer is disposed at the bottom of the mounting groove, and one surface of the ceramic substrate, which is far away from the first conductive layer and the second conductive layer, is connected to the copper-gold alloy layer.

In one embodiment, the semiconductor laser package structure further comprises a support plate, and the heat sink is disposed on the support plate.

In one embodiment, a plurality of heat dissipation fins are arranged on one surface of the supporting plate away from the heat sink, and the heat dissipation fins are arranged at intervals.

In one embodiment, the heat sink is an aluminum heat sink.

Compared with the prior art, the utility model discloses at least, following advantage has:

the utility model discloses a mounting groove has been seted up on heat sink, can be used for holding and place ceramic substrate and laser chip, the heat that produces in the laser chip course of operation also can be through heat sink derive external environment fast in, ceramic substrate is provided with first conducting layer and second conducting layer, can regard as anodal pad and negative pole pad, be used for realizing that the circuit switches on, laser chip's surface is provided with the heat dissipation layer, be favorable to in time deriving the heat that produces fast, this semiconductor laser packaging structure's heat dispersion has been improved greatly, can effectively avoid laser chip during operation high temperature, avoid laser chip to burn out, this semiconductor laser packaging structure's stability and life have been improved.

Drawings

Fig. 1 is a schematic structural diagram of a semiconductor laser package structure according to an embodiment;

FIG. 2 is an enlarged schematic view of part A of the embodiment shown in FIG. 1;

fig. 3 is a schematic structural diagram of a heat dissipation core layer and a heat dissipation base layer of a semiconductor laser package structure according to an embodiment.

Detailed Description

It should be noted that, in the present invention, the embodiments and features of the embodiments may be combined with each other without conflict. The following will combine the drawings of the embodiments of the present invention to further describe the technical solution of the present invention, and the present invention is not limited to the following specific embodiments.

It should be understood that the same or similar reference numerals in the drawings of the embodiments correspond to the same or similar parts. In the description of the present invention, it should be understood that if there are terms such as "upper", "lower", "front", "rear", "left", "right", "top", "bottom", etc., indicating orientations or positional relationships based on the orientations or positional relationships shown in the drawings, the description is merely for convenience of description and simplicity of description, but does not indicate or imply that the equipment or components referred to must have specific orientations, be constructed in specific orientations, and be operated, and therefore, the terms describing the positional relationships in the drawings are only used for illustrative purposes and are not to be construed as limitations of the present patent, and those skilled in the art will understand the specific meanings of the terms according to specific situations.

Referring to fig. 1 and fig. 2, in an embodiment, a semiconductor laser package structure 10 includes a heat sink 100, a ceramic substrate 200, and a laser chip 300. The heat sink 100 is provided with a mounting groove 101. The ceramic substrate 200 is disposed in the mounting groove 101, a first conductive layer 110 and a second conductive layer 120 are disposed on a surface of the ceramic substrate 200 away from the heat sink 100, and the first conductive layer 110 and the second conductive layer 120 are disposed at an interval. The laser chip 300 is electrically connected to the first conductive layer 110 and the second conductive layer 120, respectively, the laser chip 300 is disposed on one of the first conductive layer 110 and the second conductive layer 120, and a heat dissipation layer 310 is disposed on a surface of the laser chip 300.

In this embodiment, the ceramic substrate 200 is disposed at the bottom of the mounting groove 101, and a first conductive layer 110 and a second conductive layer 120 are disposed on one surface of the ceramic substrate 200 away from the bottom of the mounting groove 101.

It should be noted that the heat sink 100 is provided with a mounting groove 101, the mounting groove 101 is communicated with the external environment, and the mounting groove 101 may be used for accommodating and placing the ceramic substrate 200 and the laser chip 300, for example, the heat sink 100 is an aluminum heat sink. The aluminum heat sink has the advantages of good heat dissipation performance and easy processing and forming, and particularly, in the embodiment, the ceramic substrate 200 is installed on the bottom of the installation groove 101, the first conductive layer 110 and the second conductive layer 120 are plated on the side, away from the heat sink 100, of the ceramic substrate 200 through an electroplating process, a gap is left between the first conductive layer 110 and the second conductive layer 120, the first conductive layer 110 and the second conductive layer 120 can be respectively used as a positive electrode pad and a negative electrode pad, the laser chip 300 is arranged on the first conductive layer 110 or the second conductive layer 120, and then the other one is electrically connected with the laser chip 300 through the arrangement of a conductive piece, so that the circuit connection of the laser chip 300 is realized, the heat dissipation layer 310 is arranged on the surface of the laser chip 300, thereby facilitating the acceleration of the heat dissipation generated during the operation of the laser chip 300, facilitating the rapid heat dissipation of the generated in time, and greatly improving the heat dissipation performance of the semiconductor laser package structure, the over-high temperature of the laser chip 300 during working can be effectively avoided, the laser chip 300 is prevented from being burnt out, and the performance stability and the service life of the semiconductor laser packaging structure are improved. It should be noted that the heat dissipation layer 310 may be made of a heat dissipation material with conductive performance, so that when the laser chip 300 is disposed on the first conductive layer 110 or the second conductive layer 120, it is beneficial to ensure that the laser chip 300 is in circuit communication with the first conductive layer 110 or the second conductive layer 120, and in addition, the laser chip 300 may also be in circuit communication with the first conductive layer 110 or the second conductive layer 120 by disposing a wire.

Referring to fig. 2, in an embodiment, the laser chip further includes a metal wire 400, the laser chip 300 is disposed on the first conductive layer 110, an electrode 311 is disposed on a surface of the heat dissipation layer 310 away from the laser chip 300, the electrode 311 is electrically connected to the laser chip 300, one end of the metal wire 400 is connected to the electrode 311, and the other end of the metal wire 400 is connected to the second conductive layer 120. It can be understood that, in this embodiment, the laser chip 300 is fixed on the first conductive layer 110 by welding, and the laser chip 300 is electrically connected to the second conductive layer 120 through the metal lead 400, so as to implement circuit conduction, for example, the metal lead 400 is a gold wire, and the metal lead 400 has a plurality of wires, and is simple in structure and easy to prepare.

In another embodiment, the laser chip further includes a conductive wire body, the laser chip is disposed on the second conductive layer, a metal plating layer is disposed on a surface of the heat dissipation layer away from the laser chip, the metal plating layer is electrically connected to the laser chip, one end of the conductive wire body is connected to the metal plating layer, and the other end of the conductive wire body is connected to the first conductive layer. It can be understood that, in this embodiment, the laser chip is fixed on the second conductive layer by welding, and the laser chip is electrically connected with the first conductive layer through the lead wire body, so as to implement circuit conduction.

Referring to fig. 3, in an embodiment, the heat dissipation layer 310 includes a heat dissipation core layer 312 and a heat dissipation base layer 313, the heat dissipation base layer 313 is wrapped outside the heat dissipation core layer 312, and the heat dissipation base layer 313 is connected to a surface of the laser chip 300. It can be understood that by using the heat dissipation core layer 312 and the heat dissipation base layer 313, different heat dissipation materials can be used, which is beneficial to achieving a better heat dissipation effect and improving heat dissipation performance. In this embodiment, the heat dissipation core layer 312 includes at least one of an aluminum silicon carbide layer, an aluminum carbon layer, and an aluminum silicon layer. The heat dissipation base layer 313 is an alloy layer. The aluminum silicon carbide, the aluminum carbon and the aluminum silicon are novel heat dissipation materials, have high heat dissipation performance and low price, are favorable for saving the production cost of the semiconductor laser packaging structure, the heat dissipation base layer 313 adopts an alloy layer, can ensure the electrical conductivity, ensures the circuit communication of the laser chip 300, and the alloy layer also has good thermal conductivity, for example, the alloy layer is a tungsten-copper alloy.

Referring to fig. 1 and 2, in order to further improve the heat dissipation performance, in an embodiment, a copper-gold alloy layer 101a is disposed at the bottom of the mounting groove 101, and one surface of the ceramic substrate 200 away from the first conductive layer 110 and the second conductive layer 120 is connected to the copper-gold alloy layer 101 a. Through the arrangement of the copper-gold alloy layer 101a, the copper-gold alloy material has high thermal conductivity, so that heat on the ceramic substrate 200 can be further rapidly transferred to the heat sink 100 for heat dissipation, and the heat dissipation performance is greatly improved.

Referring to fig. 1, in an embodiment, the semiconductor laser package structure further includes a supporting plate 500, and the heat sink 100 is disposed on the supporting plate 500. Through setting up the backup pad 500, can be used for the installation to place heat sink 100, thereby install laser chip 300 and ceramic substrate 200 on backup pad 500, thereby can install laser chip 300 in concrete work platform through backup pad 500, simple installation and firm, specifically, in this embodiment, mounting groove 101 is seted up in heat sink 100's vertical direction, mounting groove 101 runs through two relative sides of heat sink 100, thereby form concave profile structure in two relative sides, one of them concave profile structure's side is connected with backup pad 500, thereby install heat sink 100 in the backup pad, the heat that laser chip 300 produced can be derived to external environment through mounting groove 101, guarantee the radiating effect.

Referring to fig. 1 again, in order to further improve the heat dissipation performance of the semiconductor laser package structure, in an embodiment, a plurality of heat dissipation fins 510 are disposed on a surface of the supporting plate 500 away from the heat sink 100, and the heat dissipation fins 510 are disposed at intervals. It can be understood that, by providing the heat dissipation fins 510, when the heat generated by the laser chip 300 is transferred to the support plate 500 through the heat sink 100, the heat can be quickly transferred to the environment through each heat dissipation fin 510, so that the heat dissipation performance is greatly improved, and the heat dissipation effect is better.

It is obvious that the above embodiments of the present invention are only examples for clearly illustrating the present invention, and are not limitations to the embodiments of the present invention. Other variations and modifications will be apparent to persons skilled in the art in light of the above description. And are neither required nor exhaustive of all embodiments. Any modification, equivalent replacement, and improvement made within the spirit and principle of the present invention should be included in the protection scope of the claims of the present invention.

Claims

1. A semiconductor laser package structure, comprising:

the heat sink is provided with a mounting groove;

2. The semiconductor laser package structure of claim 1, further comprising a metal line, wherein the laser chip is disposed on the first conductive layer, an electrode is disposed on a surface of the heat dissipation layer away from the laser chip, the electrode is electrically connected to the laser chip, one end of the metal line is connected to the electrode, and another end of the metal line is connected to the second conductive layer.

3. The semiconductor laser package structure of claim 1, further comprising a conductive wire body, wherein the laser chip is disposed on the second conductive layer, a metal plating layer is disposed on a surface of the heat dissipation layer away from the laser chip, the metal plating layer is electrically connected to the laser chip, one end of the conductive wire body is connected to the metal plating layer, and another end of the conductive wire body is connected to the first conductive layer.

4. The semiconductor laser package of claim 1, wherein the heat spreader layer comprises a heat spreader core and a heat spreader base, the heat spreader base is wrapped around the heat spreader core, and the heat spreader base is attached to the surface of the laser chip.

5. The semiconductor laser package of claim 4, wherein the heat sink core layer comprises at least one of an aluminum silicon carbide layer, an aluminum carbon layer, and an aluminum silicon layer.

6. The semiconductor laser package of claim 4, wherein the heat spreading base layer is an alloy layer.

7. The semiconductor laser package structure of claim 1, wherein a layer of cu-au alloy is disposed at a bottom of the mounting recess, and a surface of the ceramic substrate away from the first and second conductive layers is connected to the layer of cu-au alloy.

8. The semiconductor laser package of claim 1, further comprising a support plate, the heat sink being disposed on the support plate.

9. The semiconductor laser package of claim 8, wherein a plurality of heat sink fins are disposed on a side of the support plate away from the heat sink, the heat sink fins being spaced apart from one another.

10. A semiconductor laser package structure as claimed in any one of claims 1-9 wherein the heat sink is an aluminum heat sink.