CN214736202U - Czochralski single crystal reaction device - Google Patents
Czochralski single crystal reaction device Download PDFInfo
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- CN214736202U CN214736202U CN202120298427.XU CN202120298427U CN214736202U CN 214736202 U CN214736202 U CN 214736202U CN 202120298427 U CN202120298427 U CN 202120298427U CN 214736202 U CN214736202 U CN 214736202U
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- heat preservation
- heat
- thick bamboo
- cylinder
- single crystal
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Abstract
The utility model provides a czochralski single crystal reaction device, including interior heat preservation, outer heat preservation, an interior heat preservation section of thick bamboo and an outer heat preservation section of thick bamboo, an outer heat preservation section of thick bamboo is located the periphery of an interior heat preservation section of thick bamboo, an outer heat preservation section of thick bamboo with be equipped with the heat preservation clearance between the interior heat preservation section of thick bamboo, interior heat preservation with interior heat preservation section of thick bamboo zonulae occludens, outer heat preservation with an outer heat preservation section of thick bamboo zonulae occludens. The utility model is provided with an outer heat preservation cylinder outside the inner heat preservation cylinder, a heat preservation gap is arranged between the inner heat preservation cylinder and the outer heat preservation cylinder, and the wall surfaces of the inner heat preservation cylinder and the outer heat preservation cylinder are both closely connected with heat preservation layers to form a double-layer thermal field, thereby improving the heat preservation performance, having good consistency of the thermal field and prolonging the service life of the thermal field; through with the bottom detachably of interior heat preservation section of thick bamboo and an outer heat preservation section of thick bamboo connect in the bottom plate, and casing and bottom plate also can dismantle the connection, conveniently dismantle the transport, reduce intensity of labour.
Description
Technical Field
The utility model belongs to the technical field of monocrystalline silicon production, especially, relate to a vertical pulling single crystal reaction unit.
Background
Single crystal silicon is a semiconductor material generally used for manufacturing integrated circuits and other electronic components, and there are two growth techniques for single crystal silicon: the float zone process and the czochralski process, with the czochralski process being the process currently in common use. The Czochralski method comprises melting polycrystalline silicon in a quartz crucible by resistance heating, maintaining the temperature slightly higher than the melting point of silicon, and under the protection of inert gas, performing seeding, shouldering, shoulder rotating, diameter equalizing, ending, crystal taking out, etc. to complete crystal growth.
In the production of monocrystalline silicon, the crystal pulling is carried out by a single-layer heat preservation mode of a heat preservation cylinder and a soft felt/solid felt which is mainly used at present. In the thermal field with the single-layer thermal insulation structure, due to the high temperature in the crystal pulling process, the soft felt can be pulverized, so that the thermal insulation performance is deteriorated, the power is increased, the crystallization effect is deteriorated, and the thermal insulation felt needs to be replaced regularly. Additionally, in the use process of the thermal field with the single-layer thermal insulation structure, the thermal insulation effect is gradually deteriorated, the consistency is deteriorated, and the requirement for high-quality production of monocrystalline silicon cannot be met.
SUMMERY OF THE UTILITY MODEL
An object of the utility model is to overcome the not enough of above-mentioned prior art existence, provide a czochralski crystal reaction device, solved prior art in individual layer insulation construction not enough, overcome the defect that the heat preservation effect is poor, the production uniformity is poor, thermal field life is short.
The utility model provides a czochralski single crystal reaction device, including interior heat preservation, outer heat preservation, an interior heat preservation section of thick bamboo and an outer heat preservation section of thick bamboo, an outer heat preservation section of thick bamboo is located the periphery of an interior heat preservation section of thick bamboo, an outer heat preservation section of thick bamboo with be equipped with the heat preservation clearance between the interior heat preservation section of thick bamboo, interior heat preservation with interior heat preservation section of thick bamboo zonulae occludens, outer heat preservation with an outer heat preservation section of thick bamboo zonulae occludens.
Further, the inner heat-insulating layer is arranged on the outer wall of the inner heat-insulating cylinder.
Further, the outer heat-insulating layer is arranged on the outer wall of the outer heat-insulating cylinder.
Further, the heat insulation device also comprises an inner cover plate, wherein the inner cover plate is arranged at the top of the inner heat insulation cylinder.
Further, still include bottom plate and casing, the equal detachably of the bottom of interior heat preservation section of thick bamboo and outer heat preservation section of thick bamboo connect in the bottom plate, the casing is located the periphery of outer heat preservation section of thick bamboo, the casing with the connection can be dismantled to the bottom plate.
Further, the inner wall of the shell is tightly connected with the outer heat-insulating layer.
Further, the inner heat-insulating cylinder and the outer heat-insulating cylinder are made of graphite or carbon materials, and the inner heat-insulating layer and the outer heat-insulating layer are soft felts.
Further, the thickness of the outer heat-insulating layer is 50-115 mm.
Further, the thickness of the inner heat-insulating layer is 10-30 mm.
Further, the clearance between the inner heat-insulating layer and the inner wall of the outer heat-insulating cylinder is 115 mm.
The utility model has the advantages that:
the utility model provides a czochralski single crystal reaction device still is equipped with an outer heat preservation section of thick bamboo outside an inner heat preservation section of thick bamboo, has the heat preservation clearance between the two, all zonulae occludens on the wall of an inner heat preservation section of thick bamboo and an outer heat preservation section of thick bamboo including, forms double-deck thermal field, has improved the heat insulating ability, and the thermal field uniformity is good, increases thermal field life.
The utility model discloses with the bottom detachably of an interior heat preservation section of thick bamboo and an outer heat preservation section of thick bamboo connect in the bottom plate, and the casing also can dismantle with the bottom plate and be connected, conveniently dismantle the transport, reduce intensity of labour.
Drawings
The present invention is further explained by using the drawings, but the embodiments in the drawings do not constitute any limitation to the present invention, and for those skilled in the art, other drawings can be obtained according to the following drawings without any inventive work.
FIG. 1 is a plan view of a Czochralski single crystal reaction apparatus of this example 1.
Fig. 2 is a sectional view taken along line a-a in fig. 1.
Detailed Description
The technical solution of the present invention will be described clearly and completely with reference to the accompanying drawings, and obviously, the described embodiments are some, but not all embodiments of the present invention. Based on the embodiments in the present invention, all other embodiments obtained by a person skilled in the art without creative work belong to the protection scope of the present invention.
In the description of the present invention, it should be noted that the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer", and the like indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings, and are only for convenience of description and simplification of description, but do not indicate or imply that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and thus, should not be construed as limiting the present invention. Furthermore, the terms "first," "second," and "third" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance.
Example 1:
referring to fig. 1 to 2, embodiment 1 provides a czochralski single crystal reaction apparatus, which comprises an inner heat-insulating layer 11, an outer heat-insulating layer 21, an inner heat-insulating cylinder 12 and an outer heat-insulating cylinder 22, wherein the outer heat-insulating cylinder 22 is arranged at the periphery of the inner heat-insulating cylinder 12, the outer heat-insulating cylinder 22 is not in direct contact with the inner heat-insulating cylinder 12, a heat-insulating gap is arranged between the outer heat-insulating cylinder 22 and the inner heat-insulating cylinder 12, the inner heat-insulating layer 11 is tightly connected with the inner heat-insulating cylinder 12, and the outer heat-insulating layer 21 is tightly connected with the outer heat-insulating cylinder 22. The inner heat-insulating layer 11 and the inner heat-insulating cylinder 12 are equivalent to an inner layer thermal field, and the outer heat-insulating layer 21 and the outer heat-insulating cylinder 22 are equivalent to an outer layer thermal field, so that a double-layer thermal field is formed, the heat-insulating property is improved, the consistency of the thermal field is good, and the service life of the thermal field is prolonged. Additionally, in the crystal pulling process, the furnace is in a vacuum environment, argon can be introduced into the furnace, the argon can fill the heat-insulating gap between the inner-layer thermal field and the outer-layer thermal field, and the effect of isolating heat loss is achieved.
In one embodiment, the inner insulating layer 11 is arranged on the outer wall of the inner insulating cylinder 12; the outer heat-insulating layer 21 is arranged on the outer wall of the outer heat-insulating cylinder 22. And the heat-insulating layer and the heat-insulating cylinder can be tightly connected through auxiliary objects such as glue and the like.
Referring to fig. 2, in the present embodiment, an inner cover plate 13 is further included, the inner cover plate 13 is disposed on the top of the inner heat-preserving container 12, and the inner cover plate 13 is detachably mounted on the top of the inner heat-preserving container 12.
Referring to fig. 2, in this embodiment, the heat-insulating device further includes a bottom plate 4 and a casing 5, the bottoms of the inner heat-insulating cylinder 12 and the outer heat-insulating cylinder 22 are detachably connected to the bottom plate 4, the casing 5 is disposed on the periphery of the outer heat-insulating cylinder 22, the casing 5 is detachably connected to the bottom plate 4, after the casing 5 is connected to the bottom plate 4, an accommodating space is defined by the inside of the casing, and the inner heat-insulating cylinder 12 and the outer heat-insulating cylinder 22 are disposed in the accommodating space. The housing 5 is made of stainless steel material.
It should be noted that after the furnace is disassembled, only the inner thermal field needs to be cleaned, and the outer thermal field does not need to be cleaned; and because the inner thermal field is close to the high-temperature area, the inner heat-insulating layer 11 is soft felt and can be pulverized, so that the heat-insulating property is reduced, when the inner heat-insulating layer 11 needs to be replaced, the replacement cost is obviously reduced, the disassembly and the assembly are simple and convenient, and the operation is simple.
In one embodiment, the inner wall of the shell 5 is tightly connected with the outer insulation layer 21, that is, after the outer insulation layer 21 is attached to the outer wall of the outer insulation tube 22, the shell 5 is tightly attached to the outer wall of the outer insulation layer 21, and the shell 5 and the outer insulation tube 22 jointly clamp the outer insulation layer 21.
As an implementation mode, the inner heat-insulating cylinder 12 and the outer heat-insulating cylinder 22 are made of graphite or carbon materials, the inner heat-insulating layer 11 and the outer heat-insulating layer 21 are made of soft felts, due to the fact that the double-layer thermal field is adopted, the thickness of the soft felt of the inner heat-insulating layer 11 is 30mm, compared with the thickness of the soft felt in a single-layer thermal field, the thickness of the soft felt is generally 150mm, and replacement cost is reduced. Additionally, the inner heat-insulating cylinder 12 may be a multi-layer structure, which may be divided into a lower heat-insulating cylinder, an intermediate heat-insulating cylinder, and an upper heat-insulating cylinder. Additionally, the inner insulation layer 11 and the outer insulation layer 21 can be made of other insulation materials.
As an implementation mode, the thickness of the outer heat-insulating layer 21 is 50-115 mm, the thickness of the inner heat-insulating layer 11 is 10-30 mm, and the gap between the inner heat-insulating layer 11 and the inner wall of the outer heat-insulating cylinder 22 is 115mm, namely after the inner heat-insulating layer 21 and the inner heat-insulating cylinder 22 are installed, the real gap between the double-layer thermal fields is the gap between the inner heat-insulating layer 11 and the inner wall of the outer heat-insulating cylinder 22, the gap is 115mm, and the gap can be adjusted adaptively according to the size of the furnace.
Compared with the prior art, the utility model provides a czochralski single crystal reaction unit still is equipped with an outer heat preservation section of thick bamboo 22 outside an inner heat preservation section of thick bamboo 12, has the heat preservation clearance between the two, including all zonulae occludens on an inner heat preservation section of thick bamboo 12 and an outer heat preservation section of thick bamboo 22's the wall, form double-deck thermal field, improved the heat insulating ability, the thermal field uniformity is good, increases thermal field life.
The utility model discloses connect the bottom detachably of an interior heat preservation section of thick bamboo 12 and an outer heat preservation section of thick bamboo 22 in bottom plate 4, and casing 5 also can dismantle with bottom plate 4 and be connected, conveniently dismantle the transport, reduce intensity of labour.
Finally, it should be emphasized that the present invention is not limited to the above-described embodiments, but only to the preferred embodiments of the invention, and is not limited to the embodiments, and any modifications, equivalent substitutions, improvements, etc. made within the spirit and principle of the present invention should be included within the scope of the present invention.
Claims (10)
1. A Czochralski single crystal reaction device is characterized by comprising an inner heat-insulation layer, an outer heat-insulation layer, an inner heat-insulation cylinder and an outer heat-insulation cylinder, wherein the outer heat-insulation cylinder is arranged on the periphery of the inner heat-insulation cylinder, a heat-insulation gap is arranged between the outer heat-insulation cylinder and the inner heat-insulation cylinder, the inner heat-insulation layer is tightly connected with the inner heat-insulation cylinder, and the outer heat-insulation layer is tightly connected with the outer heat-insulation cylinder.
2. The Czochralski single crystal reaction apparatus of claim 1, wherein the inner insulating layer is disposed on an outer wall of the inner insulating cylinder.
3. The Czochralski single crystal reaction apparatus of claim 1, wherein the outer insulating layer is disposed on an outer wall of the outer insulating cylinder.
4. The Czochralski single crystal reaction apparatus as set forth in any one of claims 1 to 3, further comprising an inner cover plate provided on a top of the inner heat-retaining cylinder.
5. The Czochralski single crystal reaction apparatus of claim 4, further comprising a base plate and a housing, wherein the bottoms of both the inner and outer heat-retaining drums are detachably connected to the base plate, the housing is provided at the periphery of the outer heat-retaining drum, and the housing is detachably connected to the base plate.
6. A Czochralski single crystal reaction apparatus as set forth in claim 5, wherein the inner wall of the casing is closely attached to the outer insulating layer.
7. The Czochralski single crystal reaction device of claim 6, wherein the inner and outer insulating cylinders are made of graphite or carbon-carbon material, and the inner and outer insulating layers are soft felt.
8. The Czochralski single crystal reaction device of claim 7, wherein the thickness of the outer insulating layer is 50 to 115 mm.
9. The Czochralski single crystal reaction device of claim 8, wherein the thickness of the inner insulating layer is 10 to 30 mm.
10. The czochralski single crystal reaction device according to claim 9, wherein the gap between the inner insulating layer and the inner wall of the outer insulating cylinder is 115 mm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202120298427.XU CN214736202U (en) | 2021-02-02 | 2021-02-02 | Czochralski single crystal reaction device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202120298427.XU CN214736202U (en) | 2021-02-02 | 2021-02-02 | Czochralski single crystal reaction device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN214736202U true CN214736202U (en) | 2021-11-16 |
Family
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202120298427.XU Withdrawn - After Issue CN214736202U (en) | 2021-02-02 | 2021-02-02 | Czochralski single crystal reaction device |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN214736202U (en) |
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2021
- 2021-02-02 CN CN202120298427.XU patent/CN214736202U/en not_active Withdrawn - After Issue
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| GR01 | Patent grant | ||
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| CP01 | Change in the name or title of a patent holder |
Address after: 519000 room 11100, floor 1, building 1, Beiling Guihua industrial village, No. 205, Gongbei Guihua North Road, Xiangzhou District, Zhuhai City, Guangdong Province Patentee after: Guangdong Zhuhai Xiangzhou Gaojing Solar Energy Technology Co.,Ltd. Patentee after: Guangdong Jinwan Gaojing Solar Energy Technology Co.,Ltd. Patentee after: Gaojing Solar Co.,Ltd. Address before: 519000 room 11100, floor 1, building 1, Beiling Guihua industrial village, No. 205, Gongbei Guihua North Road, Xiangzhou District, Zhuhai City, Guangdong Province Patentee before: Guangdong Zhuhai Xiangzhou Gaojing Solar Energy Technology Co.,Ltd. Patentee before: Guangdong Jinwan Gaojing Solar Energy Technology Co.,Ltd. Patentee before: Guangdong Gaojing Solar Energy Technology Co.,Ltd. |
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| CP01 | Change in the name or title of a patent holder | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20230418 Address after: No. 1566, Hubin Road, Sanzao Town, Jinwan District, Zhuhai City, Guangdong Province, 519000 Patentee after: Guangdong Jinwan Gaojing Solar Energy Technology Co.,Ltd. Patentee after: Gaojing Solar Co.,Ltd. Address before: 519000 room 11100, floor 1, building 1, Beiling Guihua industrial village, No. 205, Gongbei Guihua North Road, Xiangzhou District, Zhuhai City, Guangdong Province Patentee before: Guangdong Zhuhai Xiangzhou Gaojing Solar Energy Technology Co.,Ltd. Patentee before: Guangdong Jinwan Gaojing Solar Energy Technology Co.,Ltd. Patentee before: Gaojing Solar Co.,Ltd. |
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| TR01 | Transfer of patent right | ||
| AV01 | Patent right actively abandoned |
Granted publication date: 20211116 Effective date of abandoning: 20230419 |
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| AV01 | Patent right actively abandoned |
Granted publication date: 20211116 Effective date of abandoning: 20230419 |
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| AV01 | Patent right actively abandoned | ||
| AV01 | Patent right actively abandoned |