CN214148809U - Device for preparing silicon carbide powder - Google Patents
Device for preparing silicon carbide powder Download PDFInfo
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- CN214148809U CN214148809U CN202023275649.4U CN202023275649U CN214148809U CN 214148809 U CN214148809 U CN 214148809U CN 202023275649 U CN202023275649 U CN 202023275649U CN 214148809 U CN214148809 U CN 214148809U
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- silicon carbide
- carbide powder
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Abstract
The utility model provides a device for preparing carborundum powder, the device includes: the crucible comprises an upper crucible and a lower crucible, wherein the upper crucible is a hollow cylinder with an opening at the bottom end; the lower crucible is a hollow cylinder with an opening at the top end, a raw material area is arranged in the lower crucible, and the top end of the lower crucible is hermetically connected with the bottom end of the upper crucible; and the joint of the upper crucible and the lower crucible and the raw material area are both positioned in the heating coil. By arranging the sealed upper crucible and the sealed lower crucible, the raw materials can be conveniently filled, and the problem of silicon atmosphere overflow can be solved; and the junction of the upper crucible and the lower crucible is positioned in the heating coil, so that the junction of the upper crucible and the lower crucible is positioned in a relatively high-temperature region, the crystallization of silicon atmosphere at the junction is effectively reduced, and the crucible can be detached and recycled.
Description
Technical Field
The utility model relates to a device for preparing carborundum powder belongs to semiconductor material preparation technical field.
Background
The silicon carbide single crystal material has excellent semiconductor physical properties such as high thermal conductivity, high breakdown voltage, extremely high carrier mobility, high chemical stability and the like, can be manufactured into high-frequency and high-power electronic devices and optoelectronic devices which work under the conditions of high temperature and strong radiation, has great application value in the fields of national defense, high technology, industrial production, power supply and power transformation, and is regarded as a third-generation wide-bandgap semiconductor material with great development prospect.
At present, the preparation of silicon carbide powder is mainly realized by a self-propagating high-temperature synthesis method. The method utilizes high temperature to give initial heat to the reactant, so that the reactant starts to generate chemical reaction; as the reaction proceeds, the unreacted materials continue to complete the chemical reaction under exothermic conditions of reaction. Meanwhile, as the temperature rises, the silicon atmosphere begins to overflow, so that the carbon-silicon ratio is inevitably unbalanced, and high-purity silicon carbide powder is difficult to synthesize.
The prior art can not completely solve the problem that silicon atmosphere overflows in the growth process of silicon carbide powder, the problem that the silicon atmosphere escapes can be solved by sealing the crucible, but the silicon atmosphere can seriously erode the crucible and the sealing position of the crucible body and the crucible cover by the method, so that the crucible cover can not be detached, and the reuse of the crucible is influenced; the crucible is not sealed, so that the silicon atmosphere completely escapes, the heat insulation material is seriously corroded, the material of the heat insulation material is caused, and the processing cost is increased.
SUMMERY OF THE UTILITY MODEL
In order to solve the problems, the utility model provides a device for preparing silicon carbide powder, which is provided with an upper crucible and a lower crucible, wherein the upper crucible and the lower crucible are sealed, thereby not only facilitating the filling of raw materials, but also solving the problem of silicon atmosphere overflow; and the joint of the upper crucible and the lower crucible is positioned in the heating coil, so that the joint of the upper crucible and the lower crucible is positioned in a relatively high-temperature region, the crystallization corrosion of the silicon atmosphere at the joint is effectively reduced, and the service life of the crucible is prolonged.
The technical scheme adopted by the application is as follows:
the application provides an apparatus for preparing carborundum powder, the apparatus includes:
the crucible comprises an upper crucible and a lower crucible, wherein the upper crucible is a hollow cylinder with an opening at the bottom end;
the lower crucible is a hollow cylinder with an opening at the top end, a raw material area is arranged in the lower crucible, and the top end of the lower crucible is hermetically connected with the bottom end of the upper crucible;
and the joint of the upper crucible and the lower crucible and the raw material area are both positioned in the heating coil.
Preferably, the bottom end of the upper crucible is provided with a first step, and the top end of the lower crucible is provided with a second step matched with the first step.
Preferably, the bottom end of the upper crucible is provided with a bulge, and the top end of the lower crucible is provided with a groove matched with the bulge.
Preferably, the height of the upper crucible is not less than the height of the lower crucible.
Preferably, the ratio of the height of the upper crucible to the height of the lower crucible is 1-4: 1.
preferably, the thickness of the top wall of the upper crucible is greater than the thickness of the side wall of the upper crucible.
Preferably, the inner wall of the top of the upper crucible is covered with an insulating layer, and the insulating layer is made of graphite materials.
Preferably, the heating coil is connected to a lifting device.
Preferably, the upper crucible and the lower crucible have the same diameter, and both the upper crucible and the lower crucible are graphite crucibles.
Preferably, the upper crucible and the lower crucible are positioned inside the furnace body, and the heating coil is arranged around the outside of the furnace body.
The utility model has the advantages of but not limited to:
(1) the device for preparing the silicon carbide powder comprises an upper crucible and a lower crucible, wherein the top end of the lower crucible is hermetically connected with the bottom end of the upper crucible, and the joint of the upper crucible and the lower crucible and a raw material area are both positioned inside a heating coil; by arranging the sealed upper crucible and the sealed lower crucible, the raw materials can be conveniently filled, and the problem of silicon atmosphere overflow can be solved; and the joint of the upper crucible and the lower crucible is positioned in the heating coil, so that the joint of the upper crucible and the lower crucible is positioned in a relatively high-temperature region, the crystallization of silicon atmosphere at the joint is effectively reduced, and the service life of the crucible is prolonged.
(2) The utility model relates to a device for preparing silicon carbide powder, which is characterized in that the thickness of the top wall of an upper crucible is larger than that of the side wall of the upper crucible; the silicon atmosphere volatilizes, causes the erosion to last crucible roof, will go up the roof thickening of crucible, has prolonged the life of crucible.
(3) The utility model relates to a device for preparing carborundum powder covers through last crucible top inner wall and has the heat preservation, and the heat preservation is selected from the graphite material. The silicon atmosphere volatilizes upwards, and the silicon atmosphere reacts with the graphite raw material to generate silicon carbide powder with larger size, and the silicon atmosphere can not run out, and can not corrode the crucible, thereby effectively prolonging the service life of the crucible.
(4) The device for preparing the silicon carbide powder is connected with the lifting device through the heating coil; the lifting device controls the movement of the heating coil, and the raw material area is in a high-temperature area in the process of preparing the silicon carbide powder; when the growth of the silicon carbide powder is finished, the heating coil is moved upwards, so that the joint of the upper crucible and the lower crucible is located in the middle of the heating coil, the joint is located in an absolute high-temperature area, the silicon atmosphere is ensured to be free of crystallization at the joint, and the silicon gas can be volatilized again at high temperature even if a small amount of crystallization exists in the past, and the joint is ensured to be free of crystallization.
Drawings
The accompanying drawings, which are included to provide a further understanding of the application and are incorporated in and constitute a part of this application, illustrate embodiment(s) of the application and together with the description serve to explain the application and not to limit the application. In the drawings:
FIG. 1 is a cross-sectional view of an apparatus for preparing silicon carbide powder according to the present invention;
FIG. 2 is a schematic view of the structure of the combination of the upper crucible and the lower crucible according to an embodiment of the present invention;
FIG. 3 is a schematic view of the structure of the combination of the upper crucible and the lower crucible according to another embodiment of the present invention;
wherein, 1, an upper crucible; 2. a lower crucible; 3. a furnace body; 4. a heating coil; 5. a first step; 6. a second step; 7. a protrusion; 8. a groove; 9. and (7) an insulating layer.
Detailed Description
The present application will be described in detail with reference to examples, but the present application is not limited to these examples.
In the following description, numerous specific details are set forth in order to provide a thorough understanding of the present application, however, the present application may be practiced in other ways than those described herein, and therefore the scope of the present application is not limited by the specific embodiments disclosed below.
In addition, in the description of the present application, it is to be understood that the terms "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", etc. indicate orientations or positional relationships based on those shown in the drawings, and are only for convenience of description and simplicity of description, and do not indicate or imply that the referred devices or elements must have a specific orientation, be constructed in a specific orientation, and be operated, and thus, should not be construed as limiting the present application.
The embodiments in the present specification are described in a progressive manner, and the same and similar parts among the embodiments are referred to each other, and each embodiment focuses on the differences from the other embodiments.
Furthermore, the terms "first", "second" and "first" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include one or more of that feature. In the description of the present application, "a plurality" means two or more unless specifically limited otherwise.
In this application, unless expressly stated or limited otherwise, the terms "mounted," "connected," "coupled," and the like are to be construed broadly and include, for example, fixed or removable connections or integral parts; the connection can be mechanical connection, electrical connection or communication; either directly or indirectly through intervening media, either internally or in any other relationship. The specific meaning of the above terms in the present application can be understood by those of ordinary skill in the art as appropriate.
In this application, unless expressly stated or limited otherwise, the first feature "on" or "under" the second feature may be directly contacting the first and second features or indirectly contacting the first and second features through intervening media. In the description herein, reference to the description of the term "one embodiment," "some embodiments," "an example," "a specific example," or "some examples," etc., means that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the application. In this specification, the schematic representations of the terms used above are not necessarily intended to refer to the same embodiment or example. Furthermore, the particular features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples.
Example 1
Referring to fig. 1, the present embodiment provides an apparatus for preparing silicon carbide powder, the apparatus comprising an upper crucible 1, a lower crucible 2 and a heating coil 4, the upper crucible 1 being a hollow cylinder with an open bottom end; the lower crucible 2 is a hollow cylinder with an opening at the top end, a raw material area is arranged in the lower crucible 2, and the top end of the lower crucible 2 is hermetically connected with the bottom end of the upper crucible 1; the joint of the upper crucible 1 and the lower crucible 2 and the raw material area are both positioned inside the heating coil 4. By arranging the sealed upper crucible 1 and the lower crucible 2, the raw materials can be conveniently filled, and the problem of overflowing of silicon atmosphere can be solved; and the junction of the upper crucible 1 and the lower crucible 2 is positioned inside the heating coil 4, so that the junction of the upper crucible 1 and the lower crucible 2 is positioned in a relatively high-temperature region, the crystallization of silicon atmosphere at the junction is effectively reduced, the crucible can be guaranteed to be disassembled and reused, and the service life of the crucible is prolonged.
Specifically, the connection mode of the upper crucible 1 and the lower crucible 2 is not particularly limited as long as the upper crucible 1 and the lower crucible 2 are hermetically connected, so that the upper crucible 1 and the lower crucible 2 form a closed reaction chamber, and the silicon atmosphere does not escape.
As an embodiment of the present application, with reference to fig. 2 in combination, the bottom end of the upper crucible 1 is provided with a first step 5, and the top end of the lower crucible 2 is provided with a second step 6 cooperating with the first step 5. The upper crucible 1 and the lower crucible 2 are hermetically connected through the matching of the first step 5 and the second step 6, and in order to improve the sealing effect, a sealing ring can be arranged at the joint of the steps, preferably, the sealing ring is an O-shaped rubber sealing ring.
As an embodiment of the present application, with reference to FIG. 3 in combination, the bottom end of the upper crucible 1 is provided with a protrusion 7 and the top end of the lower crucible 2 is provided with a recess 8 cooperating with the protrusion 7. By inserting the protrusion 7 into the groove 8, the upper crucible 1 and the lower crucible 2 are hermetically connected, and the connection structure is simple and firm.
In one embodiment of the present application, the height of upper crucible 1 is set to be not less than the height of lower crucible 2 in order to fill more raw material in upper crucible 1 and to improve the efficiency of silicon carbide powder growth. Preferably, the ratio of the height of the upper crucible 1 to the height of the lower crucible 2 is 1-4: 1, more preferably, the ratio of the height of the upper crucible 1 to the height of the lower crucible 2 is 2: 1.
as an embodiment of the application, the upper crucible 1 and the lower crucible 2 are communicated up and down, and after the upper crucible 1 is filled through the opening end of the upper crucible 2, the lower crucible 2 is placed on the top of the upper crucible 1 to realize sealing.
As an embodiment of the present application, the thickness of the top wall of the upper crucible 1 is greater than the thickness of the side wall of the upper crucible 1. The silicon atmosphere volatilizes, causes the erosion to the roof of lower upper crucible 1, will go up the roof thickening of crucible 1, has prolonged the life of crucible.
As an embodiment of the present application, the top inner wall of the upper crucible 1 is covered with an insulating layer 9, and the insulating layer 9 is selected from graphite materials. The silicon atmosphere volatilizes upwards, and the silicon atmosphere reacts with the graphite raw material to generate silicon carbide powder with larger size, and the silicon atmosphere can not run out, and can not corrode the crucible, thereby effectively prolonging the service life of the crucible.
As an embodiment of the present application, the heating coil 4 is connected to a lifting device. The lifting device controls the movement of the heating coil 4, and the raw material area is in a high-temperature area in the process of preparing the silicon carbide powder; when the growth of the silicon carbide powder is finished, the heating coil 4 is moved upwards, so that the joint of the upper crucible 1 and the lower crucible 2 is located in the middle of the heating coil 4, the joint is located in an absolute high-temperature area, the condition that the silicon atmosphere is not crystallized at the joint is ensured, even if a small amount of crystals exist in the front, the crystals can be volatilized again at high temperature, and the condition that the joint is not crystallized is ensured.
As an embodiment of the application, the diameters of the upper crucible 1 and the lower crucible 2 are the same, so that the upper crucible 1 and the lower crucible 2 are connected to form a reaction chamber with a smooth inner wall, and the silicon atmosphere volatilized in a raw material area can not escape to corrode the heat insulating material. Preferably, the upper crucible 1 and the lower crucible 2 are both graphite crucibles, so that the influence of the crucibles on the growth quality of the silicon carbide powder due to the impurities brought by the silicon carbide powder is avoided.
As an embodiment of the application, the device also comprises a furnace body 3, the upper crucible 1 and the lower crucible 2 are positioned inside the furnace body 3, and the heating coil 4 is arranged around the outside of the furnace body 3. After the raw materials are filled in the upper crucible 1, the lower crucible 2 is placed on the upper crucible 1 to realize sealing, the connected upper crucible 1 and the lower crucible 2 are placed inside the furnace body 1, the heat insulation materials are arranged around the outer sides of the upper crucible 1 and the lower crucible 2, and through the sealing of the upper crucible 1 and the lower crucible 2, the silicon atmosphere cannot escape and cannot corrode the heat insulation materials.
The embodiments in the present specification are described in a progressive manner, and the same and similar parts among the embodiments are referred to each other, and each embodiment focuses on the differences from the other embodiments. In particular, for the system embodiment, since it is substantially similar to the method embodiment, the description is simple, and for the relevant points, reference may be made to the partial description of the method embodiment.
The above are merely examples of the present application, and the scope of the present application is not limited by these specific examples, but is defined by the claims of the present application. Various modifications and changes may occur to those skilled in the art. Any modification, equivalent replacement, improvement, etc. made within the technical idea and principle of the present application should be included in the protection scope of the present application.
Claims (10)
1. An apparatus for preparing silicon carbide powder, the apparatus comprising:
the crucible comprises an upper crucible and a lower crucible, wherein the upper crucible is a hollow cylinder with an opening at the bottom end;
the lower crucible is a hollow cylinder with an opening at the top end, a raw material area is arranged in the lower crucible, and the top end of the lower crucible is hermetically connected with the bottom end of the upper crucible;
and the joint of the upper crucible and the lower crucible and the raw material area are both positioned in the heating coil.
2. The apparatus for preparing silicon carbide powder according to claim 1, wherein the bottom end of the upper crucible is provided with a first step, and the top end of the lower crucible is provided with a second step which is engaged with the first step.
3. The apparatus for preparing silicon carbide powder according to claim 1, wherein the bottom end of the upper crucible is provided with a protrusion, and the top end of the lower crucible is provided with a groove which is matched with the protrusion.
4. The apparatus for preparing silicon carbide powder according to claim 1, wherein the height of the upper crucible is not less than the height of the lower crucible.
5. The apparatus for preparing silicon carbide powder according to claim 1, wherein the ratio of the height of the upper crucible to the height of the lower crucible is 1 to 4: 1.
6. the apparatus for preparing silicon carbide powder according to claim 1, wherein the top wall of the upper crucible has a thickness greater than the side wall of the upper crucible.
7. The apparatus for preparing silicon carbide powder according to claim 1, wherein the inner wall of the top of the upper crucible is covered with an insulating layer selected from graphite materials.
8. The apparatus for preparing silicon carbide powder according to claim 1, wherein the heating coil is connected to an elevating device.
9. The apparatus for preparing silicon carbide powder according to claim 1, wherein the upper crucible and the lower crucible have the same diameter, and both the upper crucible and the lower crucible are graphite crucibles.
10. The apparatus for preparing silicon carbide powder according to claim 1, further comprising a furnace body, wherein the upper crucible and the lower crucible are located inside the furnace body, and the heating coil is disposed around the outside of the furnace body.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202023275649.4U CN214148809U (en) | 2020-12-29 | 2020-12-29 | Device for preparing silicon carbide powder |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202023275649.4U CN214148809U (en) | 2020-12-29 | 2020-12-29 | Device for preparing silicon carbide powder |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN214148809U true CN214148809U (en) | 2021-09-07 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN202023275649.4U Active CN214148809U (en) | 2020-12-29 | 2020-12-29 | Device for preparing silicon carbide powder |
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| CN (1) | CN214148809U (en) |
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- 2020-12-29 CN CN202023275649.4U patent/CN214148809U/en active Active
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