CN206396351U - A kind of InP crystal growing furnaces based on VGF methods - Google Patents
A kind of InP crystal growing furnaces based on VGF methods Download PDFInfo
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- CN206396351U CN206396351U CN201621341907.5U CN201621341907U CN206396351U CN 206396351 U CN206396351 U CN 206396351U CN 201621341907 U CN201621341907 U CN 201621341907U CN 206396351 U CN206396351 U CN 206396351U
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Abstract
The utility model discloses a kind of InP crystal growing furnaces based on VGF methods, belong to growing semiconductor crystal equipment technical field.InP crystal growing furnaces described in the utility model include：Furnace base, furnace wall, and furnace base forms confined space with furnace wall, blow vent is opened up in furnace base, crucible tray is fixedly connected with furnace base upper surface, crucible is placed with above crucible tray, coaxial placement whether there is the isolating cylinder of bottom surface on the outside of crucible tray and crucible, in isolating cylinder periphery, vertical direction is arranged at intervals with multistage heating element, every section of heating element heater is respectively and fixedly provided with electrode mounting seat, heating electrode is connected by electrode mounting seat with heating element heater, and is extended to outside furnace base, and is fixedly connected with having heaters installing plate every section of heating element heater bottom.Thermal convection current and heat radiation in the utility model between heater installing plate barrier adjacent heating element, make the heating-up temperature of heating element heater keep stable.
Description
Technical field
The utility model is related to growing semiconductor crystal equipment technical field, specifically, more particularly to a kind of to be based on VGF methods
InP crystal growing furnaces.
Background technology
Indium phosphide (InP) is to be bound up III-V by group-III element indium (In) and V group element phosphorus (P) and partly led
Body material, has very important strategic status in field of semiconductor materials, be current photoelectric device and microelectronic component not
Alternative semi-conducting material.Compared with germanium, silicon materials, InP has many advantages：Direct transition type band structure, with height
Electro-optical efficiency；Electron mobility is high, it is easy to semi insulating material is made, and is adapted to make high-frequency microwave device and circuit；Work
Make temperature high；With strong capability of resistance to radiation；Conversion efficiency height as solar cell material etc..Therefore, InP materials are wide
It is general to apply in the high-tech such as solid luminescent, microwave communication, fiber optic communication, microwave, millimetric wave device, radioresistance solar cell neck
Domain.InP monocrystalline turn into a kind of important photoelectron and microelectronics basic material, for manufacture fiber optic communication laser,
Detector, the integrated circuit of network optic communication and high-frequency microwave device.
Fig. 1 is the InP crystal growing furnace schematic diagrames for being based on VGF (VGF) method in the prior art, such as Fig. 1 institutes
Show, seed crystal 17 used in guiding InP crystal growths is placed with the bottom thin footpath of crucible 5, and the InP polycrystal materials 18 of top are heated element
7 heating and meltings.Heating element heater 7 has multistage, is vertically spacedly distributed in the periphery of crucible 5.By supplying 7 each sections of differences of heating element heater
Heating power, make to form the thermograde that temperature gradually rises from the bottom to top in crucible.Under the driving of this thermograde,
InP melts are adsorbed at seed crystal, forming core, the InP crystal grown up so as to diameter needed for obtaining and quality.Therefore, temperature in crucible
And the stabilization of thermograde is most important for growing high-quality InP crystal.Contain wall scroll in protecting tube 15 in Fig. 1
Temperature at thermocouple, detectable seed crystal 17, passes through the different heating work(of heating element heater 7 at supply from top to bottom diverse location
Rate, forms the increased thermograde of temperature from the bottom to top, and such as thermograde is 0.1 DEG C~10 DEG C/cm, every section of heating element heater 7
Heating power changed according to the data of thermocouple Real-time Feedback, wherein, every section of heating element heater 7 is symmetrical by two
Heating electrode 8 support and (wherein one illustrate only in Fig. 1).
Because of free convection and heat radiation between the existing InP crystal growing furnaces based on VGF methods, adjacent two sections of heating element heaters
Reason, can influence the heating-up temperature of heating element heater stable.In addition, during InP growths, plane of crystal is at high temperature because solution defection is produced
Part phosphorous vapor, although the inert gas in fluid-tight agent boron oxide and high-pressure chamber above InP crystal can suppress InP solution
From, but it is rapid because being dissociated under high temperature, part phosphorous vapor spilling is still had, so as to be produced to the Temperature Distribution formed in crucible
Disturbance.Two above reason, makes temperature and thermograde in the InP monocrystal growing furnaces of existing VGF methods unstable, so as to influence
The growth quality of InP crystal.
Utility model content
In view of problem above, the purpose of this utility model is to provide a kind of InP crystal growing furnaces based on VGF methods, to solve
The problem of free convection and heat radiation influence on in-furnace temperature distributional stability between certainly adjacent two sections of heating element heaters, is conducive to life
Grow high-quality InP crystal.
To achieve these goals, the utility model uses following technical scheme：
InP crystal growing furnaces described in the utility model based on VGF methods, including furnace base, furnace wall, and furnace base and furnace wall
Confined space is formed, blow vent is opened up in furnace base, is fixedly connected with crucible tray in furnace base upper surface, is put above crucible tray
Crucible is equipped with, coaxial placement whether there is the isolating cylinder of bottom surface on the outside of crucible tray and crucible, at isolating cylinder periphery vertical direction interval
Multistage heating element is provided with, every section of heating element heater is respectively and fixedly provided with electrode mounting seat, and heating electrode is by electrode mounting seat with adding
Thermal element is connected, and is extended to outside the furnace base, and having heaters installing plate is fixedly connected with every section of heating element heater bottom,
For isolating two adjacent heating element heaters.
It is preferred that, heat-preservation cylinder is provided between heating element heater and furnace wall, and heat-preservation cylinder upper end is provided with closure.
Further, it is preferable to, heater installing plate is circular ring, annular diameters are bigger than isolating cylinder external diameter by 1~
2mm, outer annular diameter 1~2mm smaller than heat-preservation cylinder internal diameter.
It is preferred that, heating element heater is circular ring, and material is high purity graphite, and the material of heater installing plate is protected to be heat-resisting
Adiabator.
It is preferred that, dead ring is installed between heating element heater and heater installing plate, heating element heater and heater is prevented
It is conductive between installing plate.
Further, the heater installing plate positioned at bottom is fixedly connected with having heaters support base, heater support base
It is fixedly connected by multiple support bars with furnace base upper surface.
Further, it is fixedly connected between heater installing plate by multiple connecting rods.
Further, electrode mounting seat is located at same one end of heating element heater.
It is preferred that, protection sleeve pipe is vertically installed with furnace base, many thermocouples are enclosed with protection sleeve pipe, vertical peace
Loaded on cylindrical side in heating element heater, every thermocouple one heating element heater of correspondence detects the temperature of heating element heater.
It is preferred that, isolating cylinder upper end is fixedly connected with closure, isolating cylinder and closure formation confined space, in isolating cylinder
Bottom offers passage.
Compared with prior art, the utility model has advantages below and beneficial effect：
First, the heat between having heaters installing plate, barrier adjacent heating element is fixedly connected with every section of heating element heater bottom
Convection current and heat radiation, make the heating-up temperature of heating element heater keep stable；
2nd, isolating cylinder upper end seal cap sealing, and passage is opened up in isolating cylinder bottom, make InP planes of crystal by height
The dissociation steam of temperature dissociation is directed to isolating cylinder bottom, deposits to the cold in bottom, it is to avoid dissociation steam is to heating element heater
Interference.
Brief description of the drawings
Fig. 1 is the existing InP crystal growing furnace schematic diagrames based on VGF methods；
Fig. 2 is the scheme of installation of heating element heater in existing InP crystal growing furnaces；
Fig. 3 is the InP crystal growing furnace preferred embodiment diagrammatic cross-sections described in the utility model based on VGF methods；
Fig. 4 is the heating element heater scheme of installation of InP crystal growing furnaces preferred embodiment described in the utility model.
Embodiment
The utility model is described further in conjunction with the drawings and specific embodiments, in order to the utility model more
Understand and should be readily appreciated that.
Fig. 3 is the InP crystal growing furnace preferred embodiment diagrammatic cross-sections described in the utility model based on VGF methods, such as Fig. 3
Shown, the InP crystal growing furnaces described in the utility model based on VGF methods include：Furnace base 1, furnace wall 2, and furnace base 1 and furnace wall
2 are fixedly connected, and pass through the sealing ring formation confined space at the axial notch of furnace base 1.Blow vent is opened up in furnace base 1
3, inert gas is passed through into stove or is realized in cavity by blow vent 3 vacuumizes, to realize the growth work of necessary InP crystal
Skill condition.Crucible tray 4 is fixedly connected with the upper face center position of furnace base 1, crucible 5 is placed with the top of crucible tray 4,
Crucible tray 4 whether there is the isolating cylinder 6 of bottom surface with the outside coaxial placement of crucible 5, and isolating cylinder 6 is exotic material, such as metal molybdenum, pottery
Porcelain and high purity graphite etc., the step that bottom and the furnace base 1 of isolating cylinder 6 protrude coordinate positioning.
Shown in Fig. 3, the periphery vertical direction of isolating cylinder 6 is equidistantly arranged with four heating element heaters 7, heating element heater 7 is circle
Cyclic structure, the different heating power of four heating element heaters of supply makes to be formed temperature gradually increased temperature from the bottom to top in crucible 5
Gradient is spent, under the driving of this thermograde, promotes the growth of InP crystal.Difference in the outer toroid of four sections of heating element heaters 7
Position is respectively and fixedly provided with electrode mounting seat 71, and heating electrode 8 is connected by electrode mounting seat 71 with heating element heater 7, and extends to stove
The outside of base 1.Between each bottom of heating element heater 7 is fixedly connected between having heaters installing plate 9, and heater installing plate 9
Away from equal, two adjacent heating element heaters 7 are kept apart, the heat between the heating element heater 7 of adjacent different heating temperature has been obstructed
Convection current and heat radiation, make the heating-up temperature of heating element heater 7 stable.
In addition, being provided with heat-preservation cylinder 10 between heating element heater 7 and furnace wall 2, the material of heat-preservation cylinder 10 is heat insulation material
Material, the utility model is preferably graphite felt, and the upper end of heat-preservation cylinder 10 is provided with closure, and lower end can be directly placed at furnace base 1
Upper surface, dismantled when being easy to safeguard, a passage 101 offered in the bottom of heat-preservation cylinder 10, so that inside and outside heat-preservation cylinder 10
The cavity of side keeps connection.
Heater installing plate 9 is circular ring, wherein, the internal diameter of heater installing plate 9 is close with the external diameter of isolating cylinder 6,
The annular diameters of the utility model preferred heater installing plate 9 than the big 1~2mm of external diameter of isolating cylinder 6, heater installing plate 9 it is outer
Footpath is close with the internal diameter of heat-preservation cylinder 10, and the outer annular diameter of the utility model preferred heater installing plate 9 is smaller than heat-preservation cylinder internal diameter by 1~
2mm.The inner ring and outer rings of heater installing plate 9 keep certain interval with the outer shroud of isolating cylinder 6 and the inner ring of heat-preservation cylinder 10 respectively,
Both it was easily installed, and also can effectively prevents the thermal convection current and heat radiation between adjacent heating element 7, so as to avoids different heating temperature
Heating element heater 7 between interfere.
In the utility model, the material of heating element heater 7 is high purity graphite, and heater installing plate 9 is high-temperature-resistant thermal-insulation material
Material, the utility model is preferably graphite felt, is both conductive material, then pacifies between heating element heater 7 and heater installing plate 9
It is conductive between heating element heater 7 and heater installing plate 9 to prevent equipped with dead ring 11, add so as to avoid heating electrode 8 from passing to
The current direction heater installing plate 9 of thermal element 7, makes the conductive exothermal of heating installing plate 8, and bad shadow is caused to in-furnace temperature distribution
Ring.
Fig. 2 is display in the scheme of installation of heating element heater in existing InP crystal growing furnaces, Fig. 2, and heating element heater 7 passes through
Symmetrical electrode mounting seat 71 is supported by two heating electrodes 81, now, and heating electrode 8 is while heated current is transmitted
Also act as the effect that support phase answers heating element heater 7.Heating element heater 7 is supported by the heating electrode 8 of different length, heats electrode 8
Lower end connects heating power supply, the different heating power of supply heating element heater 7, to form the thermograde in stove.Such a heating unit
The mounting means of part also can be used for the InP crystal of the utility model growth reduced size.
In the utility model, as shown in Figure 3 and Figure 4, the heater installing plate 9 positioned at bottom is fixedly connected with heating
Device support base 12, heater support base 12 is fixedly connected by multiple support bars 13 with the upper surface of furnace base 1.Wherein, support
Bar 13 is uniformly distributed to realize stable support, and the quantity of support bar 13 can be 3,4 or 6, preferably 3 branch of the utility model
Strut 13 is uniformly distributed, connection heater support base 12 and furnace base 1.In addition, by many between each heater installing plate 9
Individual connecting rod 14 is fixedly connected.Wherein, connecting rod 14 is uniformly distributed on heater installing plate 9, and the quantity of connecting rod 14 can be 3
It is individual, 4 or 6, the utility model is preferably that 3 connecting rods are uniformly distributed, and passes through 3 screwed hole c1 and heater installing plate 9
It is fixedly connected.In order to realize the sealing of whole body of heater, sealed insulation set 20 is embedded between heating electrode 8 and furnace base 1.For reality
The now insulation between heating electrode 8 and heater support base 12, insulation sleeve is embedded between heater support base 12 and heating electrode 8
21。
As shown in figure 4, two electrode mounting seats 71 are located at same one end of heating element heater 7, with being distributed in the one end of heating element heater 7
Electrode mounting seat 71 by up and down two nuts 711 lock.Now, heating electrode 8 can only transmit heated current, and branch is not played
The effect of heating element heater 7 is supportted, heating element heater 7 passes through support bar 13 and the plane stability of connecting rod 14 and heater installing plate 9
Support, makes heating electrode 8 easy for installation and avoids the installation of some locking insulating parts, simplify structure, even and if growth is big
During size InP crystal, support can also stablize.
Shown in Fig. 4, uppermost heating element heater 7 is connected with most long a pair of heating electrodes 81, is heated electrode 81 and is passed through
Through hole a1 extends to the outside of furnace base 1 through four pieces of heater installing plates 9.The heating being connected with most beneath heating element heater 7
Electrode 82 is most short a pair, and the outside of furnace base 1 is extended to by the through hole a4 of heater installing plate 9.Two other heating
Electrode 8 is each passed through through hole a3 and a4 two heating element heaters 7 corresponding with centre and is connected.Supplied respectively by different heating electrodes 8
The different heating power of section heating element heater 7, is easy to the thermograde to be formed needed for InP crystal growths.
In addition, being vertically installed with protection sleeve pipe 15 on furnace base 1, many thermocouples are enclosed with protection sleeve pipe 15
16, cylindrical side in heating element heater 7 is installed vertically on, every one heating element heater 7 of correspondence of thermocouple 16 detects heating element heater 7
Temperature.Protection sleeve pipe 15 extends to furnace base 1 through four heating element heaters 7 in figure 3, and correspondence four adds in protection sleeve pipe 15
Thermal element 7 has wrapped up four different thermocouples of height 16, and four sections of heating units above and below four heating element heaters 7, detection are pressed close to respectively
The heating-up temperature of part 7, so as to the requirement according to in-furnace temperature and thermograde, by heating electrode 8 respectively to four
Heating element heater 7 provides different heating powers, and passes through the heating temperature of the different corresponding heating element heaters 7 of the Real-time Feedback of thermocouple 16
Degree, the heating power of each section of heating element heater 7 is controlled by different temperature controllers, is realized in crucible 5 from the bottom to top respectively
Temperature gradually increased axial-temperature gradient distribution, meets the growth conditions of InP crystal.
In grown InP crystal, the different heating power of heating element heater 7 is supplied by different heating electrodes 8, in crucible
Outer to form the thermograde gradually risen from the bottom to top, seed crystal gradually completes the growth of crystal under the driving of this thermograde,
The heater installing plate 9 being fixedly connected in the bottom of heating element heater 11 obstructed two adjacent heating element heaters, it is to avoid it is adjacent plus
Thermal convection current and heat radiation between thermal element are interfered to Temperature Distribution.
In addition, as shown in figure 3, opening a recessed blind hole in the upper-center of crucible tray 4, recessed blind hole upper end changes into taper, crucible 5
For cylinder and bottom is embedded in recessed blind hole, make whole crucible 5 is accurately firm to be positioned on crucible tray 4.In the thin footpath chamber of crucible 5
The seed crystal 17 of guiding crystal growth can be placed at body, is the InP polycrystal materials 18 for growing crystal in the top of seed crystal 17,
Melt covered with one layer of fluid-tight agent boron oxide 19, InP polycrystal materials and boron oxide under more than 1040 DEG C high temperature the top of InP polycrystal materials 18
Change, because the InP polycrystal materials of boron oxide liq density ratio melting are low after thawing, can be covered on InP melt body.InP crystal is given birth to
When long, when plane of crystal is in high temperature, monocrystalline is easy to dissociation：6InP(s)→6In(l)+P2(g)+P4(g)；Wherein P2(g)、
P4(g) be respectively under higher temperature and lower temperature under red phosphorus dissociation steam, the boron oxide of covering can prevent as fluid-tight agent
InP dissociation, but part red phosphorus dissociation steam spilling is still had when dissociating rapid at high temperature.Therefore, it is solid in the upper end of isolating cylinder 6
Surely closure 61, isolating cylinder 6 and the formation confined space of closure 61 are connected with, passage 62 is offered in the bottom of isolating cylinder 6, makes
Above-mentioned dissociation red phosphorus steam is directed to the bottom of isolating cylinder 6, because bottom is low-temperature space, steam deposits to the cold, it is to avoid dissociation is steamed
Gas produces disturbance to the Temperature Distribution formed in crucible.
Preferred embodiment of the present utility model is the foregoing is only, the utility model is not limited to, for this area
Technical staff for, the utility model can have various modifications and variations.It is all it is of the present utility model spirit and principle within,
Any modification, equivalent substitution and improvements made etc., should be included within protection domain of the present utility model.
Claims (10)
1. a kind of InP crystal growing furnaces based on VGF methods, including furnace base, furnace wall, the furnace base form close with the furnace wall
Space is closed, the furnace base opens up blow vent, and the furnace base upper surface is fixedly connected with above crucible tray, the crucible tray and put
Crucible is equipped with, the crucible tray whether there is the isolating cylinder of bottom surface with coaxial placement on the outside of the crucible, and the isolating cylinder periphery is vertical
Direction is arranged at intervals with multistage heating element, it is characterised in that every section of heating element heater is respectively and fixedly provided with electrode mounting seat, heating
Electrode is connected by the electrode mounting seat with the heating element heater, and is extended to outside the furnace base, is being added described in every section
Thermal element bottom is fixedly connected with having heaters installing plate, for isolating two adjacent heating element heaters.
2. the InP crystal growing furnaces according to claim 1 based on VGF methods, it is characterised in that the heating element heater and institute
State and be provided with heat-preservation cylinder between furnace wall, the heat-preservation cylinder upper end is provided with closure.
3. the InP crystal growing furnaces according to claim 2 based on VGF methods, it is characterised in that the heater installing plate
For circular ring, annular diameters than the big 1~2mm of isolating cylinder external diameter, outer annular diameter is smaller by 1 than the heat-preservation cylinder internal diameter~
2mm。
4. the InP crystal growing furnaces according to claim 1 based on VGF methods, it is characterised in that the heating element heater is circle
Cyclic structure, material is high purity graphite, and the material of the heater installing plate is heat-resistant insulation material.
5. the InP crystal growing furnaces according to claim 1 based on VGF methods, it is characterised in that the heating element heater and institute
State and dead ring is installed between heater installing plate.
6. the InP crystal growing furnaces according to claim 1 based on VGF methods, it is characterised in that positioned at described in bottom
Heater installing plate is fixedly connected with having heaters support base, and the heater support base passes through multiple support bars and the furnace base
Upper surface is fixedly connected.
7. the InP crystal growing furnaces according to claim 6 based on VGF methods, it is characterised in that the heater installing plate
Between be fixedly connected by multiple connecting rods.
8. the InP crystal growing furnaces according to claim 7 based on VGF methods, it is characterised in that the electrode installs seat
In same one end of the heating element heater.
9. the InP crystal growing furnaces according to claim 1 based on VGF methods, it is characterised in that the furnace base is vertically pacified
Equipped with protection sleeve pipe, many thermocouples are enclosed with the protection sleeve pipe, cylindrical side in the heating element heater are installed vertically on, often
Root thermocouple one heating element heater of correspondence, detects the temperature of the heating element heater.
10. the InP crystal growing furnaces according to claim 1 based on VGF methods, it is characterised in that the isolating cylinder upper end
Closure, the isolating cylinder and closure formation confined space are fixedly connected with, the isolating cylinder bottom offers ventilation
Hole.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201621341907.5U CN206396351U (en) | 2016-12-08 | 2016-12-08 | A kind of InP crystal growing furnaces based on VGF methods |
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| CN201621341907.5U CN206396351U (en) | 2016-12-08 | 2016-12-08 | A kind of InP crystal growing furnaces based on VGF methods |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109629002A (en) * | 2018-12-29 | 2019-04-16 | 珠海鼎泰芯源晶体有限公司 | The method that seed crystal, seeding and crystallization situation determine is carried out to the InP crystal ingot of VGF method production |
| WO2019109367A1 (en) * | 2017-12-08 | 2019-06-13 | 中国电子科技集团公司第十三研究所 | Device and method for rotational and continuous crystal growth by vgf process after horizontal injection and synthesis |
-
2016
- 2016-12-08 CN CN201621341907.5U patent/CN206396351U/en active Active
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2019109367A1 (en) * | 2017-12-08 | 2019-06-13 | 中国电子科技集团公司第十三研究所 | Device and method for rotational and continuous crystal growth by vgf process after horizontal injection and synthesis |
| US10519563B2 (en) | 2017-12-08 | 2019-12-31 | The 13Th Research Institute Of China Electronics Technology Group Corporation | Device and method for continuous VGF crystal growth through rotation after horizontal injection synthesis |
| CN109629002A (en) * | 2018-12-29 | 2019-04-16 | 珠海鼎泰芯源晶体有限公司 | The method that seed crystal, seeding and crystallization situation determine is carried out to the InP crystal ingot of VGF method production |
| CN109629002B (en) * | 2018-12-29 | 2021-03-16 | 珠海鼎泰芯源晶体有限公司 | Method for performing seed crystal, seeding and crystallization condition judgment on InP crystal ingot produced by VGF method |
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Effective date of registration: 20170803 Address after: 100080 Haidian District street, Haidian, building B, block 10, level 340, level 3, Patentee after: Beijing Ding Tai Xinyuan Technology Development Co. Ltd. Address before: 519085 Guangdong province Zhuhai city road two Jinding Industrial Area high-tech zone on the south side of A1 building, Rui Patentee before: Zhuhai Ding Tai Xinyuan crystal Ltd |
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Effective date of registration: 20170828 Address after: 519085 Guangdong province Zhuhai city road two Jinding Industrial Area high-tech zone on the south side of A1 building, Rui Patentee after: Zhuhai Ding Tai Xinyuan crystal Ltd Address before: 100080 Haidian District street, Haidian, building B, block 10, level 340, level 3, Patentee before: Beijing Ding Tai Xinyuan Technology Development Co. Ltd. |