CN205347623U - Heat exchange stove - Google Patents
Heat exchange stove Download PDFInfo
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- CN205347623U CN205347623U CN201620018708.4U CN201620018708U CN205347623U CN 205347623 U CN205347623 U CN 205347623U CN 201620018708 U CN201620018708 U CN 201620018708U CN 205347623 U CN205347623 U CN 205347623U
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Abstract
The utility model discloses a heat exchange stove from export -oriented interior including furnace body, heat preservation, annular heating member, annular thermal field correcting member and crucible, still includes the outer hot exchange pipe who feeds through of crucible bottom and stove, the annular heating member is the grid form, and annular thermal field correcting member comprises individual layer or multilayer high temperature resistance inert material layer. After having set up annular thermal field correcting member between crucible and the annular heating member, the in various degree selectivity shielding of heat by heating that the heat -generating body sent annular thermal field correcting member on co -altitude not with filter the back, again to crucible indirect heating, can improve the temperature gradient field distribution, and solve well because the heat -generating body of lattice -shaped, the electrode, the uneven problem of distribution of temperature that the convection current caused with the fuse -element is arranged to asymmetric thermal fields such as crucible support ring and temperature measurement hole passageway, compare current heat exchange stove, more be favorable to the growth of large size sapphire crystal.
Description
Technical field
This utility model relates to technical field of crystal growth, particularly relates to a kind of heat-exchanging furnace.
Background technology
Heat-exchanging method is a kind of mode of crystal growth, is that material is first heated to molten mass from solid, then after from molten mass, local is subject to cryogenic gas cooling, the process of crystallization gradually.Heat-exchanging method growth crystal is high with its automaticity, thermal field is stable, life-span length and rely on the advantage such as relatively low become the very important production method of one of the crystal growth such as sapphire to artificial, is particularly suitable for large-sized sapphire crystal.Utilize heat-exchanging method growing large-size sapphire crystallization, large-sized sapphire solid material is placed in crucible, utilize the annular-heating body around crucible that it is heated, because sapphire volume is bigger so that the crucible holding it is substantially filled with the efficient heat generation region of annular heater.And theory analysis is it can be seen that heterogeneity phantom is required significantly high by heat-exchanging method, it is necessary to build the temperature gradient field that the low upper temp of crucible bottom temperature is high, external temperature high central temperature is low, the whether reasonable quality that can badly influence sapphire crystal of this gradient.
The existing body of heater utilizing heat-exchanging method growth super large sapphire crystal, reason due to configuration aspects, at crystal such as growing sapphires, during particularly in especially big superelevation crystal more than 200kg, owing to crystal volume is big, crucible height is substantially filled with the efficient heat generation region of heater, and top gradient is improper, easily occur that the top crystal speed of growth is difficult to control to, cause that crystal mass is poor.Additionally, due to the temperature distributing disproportionation that the asymmetric thermal fields such as the heater of lattice-shaped, electrode, crucible supporting ring and thermometer hole passage are arranged and melt convection causes, therefore how improving, by structure, the heat-exchanging furnace obtaining being more suitable for the thermograde of super large sapphire crystalline growth is problem demanding prompt solution.
Utility model content
This utility model provides a kind of heat-exchanging furnace, to solve the irrational problem of temperature field Temperature Distribution of heat-exchanging furnace of the prior art.
In order to solve above-mentioned technical problem, the utility model discloses following technical scheme:
A kind of heat-exchanging furnace, for super large sapphire crystal growth, include body of heater, heat-insulation layer, annular-heating body, annular thermal field adjustment parts and crucible, described annular-heating body and annular thermal field adjustment parts from outside to inside concentric, and described crucible is positioned at annular thermal field and adjusts the center of parts；Also include described crucible bottom and the heat-exchange tube connected outside stove；Described annular-heating body is grid-like.Described annular thermal field adjusts parts and is made up of the resistant to elevated temperatures inert material layer of single or multiple lift.
Preferably, in above-mentioned heat-exchanging furnace, described annular thermal field adjusts the floor height floor height lower than described annular-heating body of parts, and described annular thermal field adjusts the apical side height height lower than the upper cover plate of described crucible of parts.
Preferably, in above-mentioned heat-exchanging furnace, on direction from the top down, described annular thermal field adjust parts thickness be incremented by.
Preferably, in above-mentioned heat-exchanging furnace, described resistant to elevated temperatures inert material layer is made up of graphite linings, tungsten layer, molybdenum layer and/or tungsten-molybdenum alloy layer.
From above technical scheme, the heat-exchanging furnace device that this utility model provides, heating lattice body portion in the structure of heater lattice-shaped is different for the radiation effect of crucible with gap, the problem that result in crucible surface temperature distributing disproportionation, after being provided with annular thermal field adjustment parts between crucible and annular-heating body, the heat that heater sends is by after heating annular thermal field adjustment parts selectively masking in various degree on differing heights and filtering, again crucible is heated indirectly, thermograde can be improved often be distributed, and solve the heater due to lattice-shaped well, electrode, the problem of the temperature distributing disproportionation that the asymmetric thermal fields such as crucible supporting ring and thermometer hole passage are arranged and melt convection causes, compare existing heat-exchanging furnace, it is more beneficial for the growth of oversize sapphire crystal.
Accompanying drawing explanation
In order to be illustrated more clearly that the technical scheme in this utility model embodiment, below the accompanying drawing used required for embodiment is briefly described, apparently, for those of ordinary skills, under the premise not paying creative work, it is also possible to obtain other accompanying drawing according to these accompanying drawings.
The cross-sectional view of a kind of heat-exchanging furnace that Fig. 1 provides for this utility model embodiment；
Sapphire crystallization process schematic diagram in the crucible that Fig. 2 provides for this utility model embodiment.
Wherein:
1-body of heater, 2-heat-insulation layer, 3-annular heater, 4-annular thermal field adjusts parts, and 5-base plate, 6-heat-exchange tube, 7-crucible, 701-props up pushing out ring.
Detailed description of the invention
This utility model embodiment provides a kind of heat-exchanging furnace, can solve the irrational problem of temperature field Temperature Distribution of heat-exchanging furnace of the prior art.
In order to make those skilled in the art be more fully understood that the technical scheme in this utility model, below in conjunction with the accompanying drawing in this utility model embodiment, technical scheme in this utility model embodiment is clearly and completely described, obviously, described embodiment is only a part of embodiment of this utility model, rather than whole embodiments.Based on the embodiment in this utility model, the every other embodiment that those of ordinary skill in the art obtain under not making creative work premise, all should belong to the scope of this utility model protection.
Illustrate the cross-section structure of a kind of heat-exchanging furnace that this utility model embodiment provides incorporated by reference to reference accompanying drawing 1 and accompanying drawing 2, Fig. 1, Fig. 2 illustrates sapphire crystallization process in crucible.As described in Figure, a kind of heat-exchanging furnace, include body of heater 1, heat-insulation layer 2, annular-heating body 3, annular thermal field adjustment parts 4 and crucible 7, described annular-heating body 3 and annular thermal field from outside to inside and adjust parts 4 with one heart, and described crucible 7 is positioned at annular thermal field and adjusts the center of parts 4；The heat-exchange tube 6 also including described crucible bottom and connect outside stove.Described annular thermal field adjusts parts 4 and is made up of the resistant to elevated temperatures inert material layer of single or multiple lift.Crucible 7 is put into the sapphire material of solid, shaped, first heats to molten condition, be then continuously increased the cooling gas flow passed into from heat-exchange tube 6 to crucible bottom, take away heat, start the crystallization process from bottom to top of molten mass, until long crystalline substance terminates.
Described annular-heating body 3 is grid-like, heating lattice body portion in the structure of heater lattice-shaped is different for the radiation effect of crucible 7 with gap, there is thermometer hole passage in the intermediate height portion plus heater electrode and heater, make radial temperature profile uneven (Fig. 1 is sectional view, so thermometer hole passage is not shown).Furthermore, as shown in Figure 2, a pushing out ring 701 below crucible 7 is placed on base plate 5, buffer action is defined for crucible bottom and thermal field, plus melt convection impact herein, causing that crucible bottom corner becomes hot localised points, be unfavorable for building the high thermal field of the low upper temp of crucible bottom temperature, hot localised points makes the melt convection at this place slower in addition.
At crystal such as growing sapphires, during particularly in especially big superelevation crystal more than 200kg, owing to crystal volume is big, crucible 7 is highly substantially filled with the efficient heat generation region of heater, cause not easily passing through the adjustment crucible 7 position in thermal field to adjust heterogeneity phantom, top gradient is improper, it is easy to occurs that the top crystal speed of growth is difficult to control to, causes that crystal mass is poor.So, the temperature of thermal field distribution that the reason of above-mentioned several respects causes is very unfavorable to crystal growth, and not easily regulates.The heat-exchanging furnace that this utility model embodiment provides, after being provided with annular thermal field adjustment parts 4 between crucible 7 and annular-heating body 3, first the heat that annular heater 3 sends heats annular thermal field and adjusts parts 4, by it, crucible 7 is heated indirectly again, annular thermal field adjusts parts 4 inert material layer can adopt graphite linings, tungsten layer, molybdenum layer or tungsten-molybdenum alloy layer etc. have the material of higher thermal conductivity, can be that above-mentioned homogenous material MULTILAYER COMPOSITE forms, can also be that multiple material is composited, the problem that can solve the temperature distributing disproportionation caused due to annular-heating body.
Bending down upper high gradient to better build crucible 7 thermal field, described annular thermal field adjusts the floor height floor height lower than described annular-heating body 3 of parts 4.Described annular thermal field adjusts the apical side height height lower than the upper cover plate of described crucible 7 of parts 4.The heat that reason is heater epimere is directly radiated to crucible 7, and the heat of hypomere is through annular thermal field adjustment parts 4 re-radiation to crucible 7.Based on same reason, it is also possible to the change being adjusted component thickness direction by annular around city is realized crucible thermal field and bends down upper high gradient, it is preferable that on direction from the top down, the described annular thermal field thickness that adjusts parts 4 is incremented by.Certainly, if adopting the mode of upper and lower uniform thickness, compared with existing do not add annular thermal field adjust parts time, also can reach to build the purpose of more suitably thermograde, simply compared to above-mentioned from top to bottom, the mode that thickness is incremented by, the thermograde of the thermal field of component is less.In actual use, annular thermal field adjustment parts 4 can be directly placed on base plate 5, it is also possible to being looped around around crucible 7 by being suspended on the mode of heat-insulation layer 2, no matter take which kind of mode, the height of its bottom surface is lower than under the floor height of heater.
For the duty of different amount of filler, can pass through to adjust annular thermal field in advance and adjust the thickness of parts 4 and the method for height, obtain the most suitable annular heater heat distribution in stove for this amount of filler, build the optimized temperature field being suitable for this size sapphire growth.Adjust convenient effectively, be particularly suitable for produce more than 200Kg superelevation crystal.Annular thermal field is adjusted to the height adjustment of parts 4, can according to following principle: for a certain specific amount of filler, annular thermal field adjusts the apical side height of parts 4 most high liquid level (HLL) after solid packing all melts and all after crystallization between the intermediate altitude of crystal, it is preferable that apical side height is positioned at after whole crystallization near crystal height.In the process of crystallization, for crystallization from bottom to top, in order to vivider illustrates that annular thermal field adjusts the height adjustment principle of parts 4, refer to Fig. 2, in figure, curve can represent the shift position of crystalline boundary, and the straight line of top can represent the most high liquid level (HLL) position after all fusings.State this moment be at the bottom of curve and crucible between for crystal, be melt on curve.Illustrating, if now liquid level (from crucible bottom) is 390mm, after crystallization, crystal height is 300mm.Then the height of annular heat replacement part end face is that 160-410mm is advisable, it is preferable that be highly 300-330mm.
The above is only detailed description of the invention of the present utility model, makes to skilled artisans appreciate that or realize this utility model.The multiple amendment of these embodiments be will be apparent to one skilled in the art, and generic principles defined herein when without departing from spirit or scope of the present utility model, can realize in other embodiments.Therefore, this utility model is not intended to be limited to the embodiments shown herein, and is to fit to the widest scope consistent with principles disclosed herein and features of novelty.
The above is only detailed description of the invention of the present utility model; it should be pointed out that, for those skilled in the art, under the premise without departing from this utility model principle; can also making some improvements and modifications, these improvements and modifications also should be regarded as protection domain of the present utility model.
Claims (4)
1. a heat-exchanging furnace, for super large sapphire crystal growth, it is characterized in that, include body of heater, heat-insulation layer, annular-heating body, annular thermal field adjustment parts and crucible from outside to inside, it is concentric that described annular-heating body and annular thermal field adjust parts, and described crucible is positioned at annular thermal field and adjusts the center of parts；Also include described crucible bottom and the heat-exchange tube connected outside stove；Described annular-heating body is grid-like, and described annular thermal field adjusts parts and is made up of the resistant to elevated temperatures inert material layer of single or multiple lift.
2. heat-exchanging furnace according to claim 1, it is characterised in that described annular thermal field adjusts the floor height floor height lower than described annular-heating body of parts, and described annular thermal field adjusts the apical side height height lower than the upper cover plate of described crucible of parts.
3. heat-exchanging furnace according to claim 1, it is characterised in that on direction from the top down, described annular thermal field adjust parts thickness be incremented by.
4. heat-exchanging furnace according to claim 1, it is characterised in that described resistant to elevated temperatures inert material layer is made up of graphite linings, tungsten layer, molybdenum layer and/or tungsten-molybdenum alloy layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201620018708.4U CN205347623U (en) | 2016-01-11 | 2016-01-11 | Heat exchange stove |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201620018708.4U CN205347623U (en) | 2016-01-11 | 2016-01-11 | Heat exchange stove |
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| CN205347623U true CN205347623U (en) | 2016-06-29 |
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| CN201620018708.4U Active CN205347623U (en) | 2016-01-11 | 2016-01-11 | Heat exchange stove |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114318494A (en) * | 2021-11-30 | 2022-04-12 | 江苏吉星新材料有限公司 | Method for reducing crystal growth defects of sapphire crystal and sapphire crystal growth furnace |
-
2016
- 2016-01-11 CN CN201620018708.4U patent/CN205347623U/en active Active
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114318494A (en) * | 2021-11-30 | 2022-04-12 | 江苏吉星新材料有限公司 | Method for reducing crystal growth defects of sapphire crystal and sapphire crystal growth furnace |
| CN114318494B (en) * | 2021-11-30 | 2023-09-19 | 江苏吉星新材料有限公司 | Method for reducing sapphire crystal growth defect and sapphire crystal growth furnace |
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