CN201908153U - Thermal field exhaust device of single crystal furnace - Google Patents
Thermal field exhaust device of single crystal furnace Download PDFInfo
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- CN201908153U CN201908153U CN201020666408XU CN201020666408U CN201908153U CN 201908153 U CN201908153 U CN 201908153U CN 201020666408X U CN201020666408X U CN 201020666408XU CN 201020666408 U CN201020666408 U CN 201020666408U CN 201908153 U CN201908153 U CN 201908153U
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- crucible
- heater
- heat
- single crystal
- heat insulation
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Abstract
The utility model relates to a thermal field exhaust device of a single crystal furnace, which belongs to the field of single crystal silicon production and manufacture equipment and comprises a furnace body (1), wherein the furnace body (1) is internally provided with a heat insulation cylinder (3), and a heat insulation felt (2) is arranged between the furnace body (1) and the heat insulation cylinder (3); the heat insulation cylinder (3) is internally provided with a heater (4) which is fixed on the bottom part of the furnace body (1) through electrode bolts (8) and connected with a heating electrode (6) at the bottom part of the furnace body (1); the center of the heater (4) is provided with a crucible shaft (7), and the upper end of the crucible shaft (7) is provided with a crucible tray (9), and the lower end of the crucible shaft (7) penetrates out of the bottom part of the furnace body (1); the crucible tray (9) is internally provided with a graphite crucible (10), the graphite crucible (10) is internally provided with a quartz crucible (11), the quartz crucible (11) used for placing polycrystalline material (14); a draft tube (12) is arranged above the quartz crucible (11); the top of the heat insulation cylinder (3) is provided with an insulation cover (13) connected with the draft tube (12); and a vacuum suction hole (5) which penetrates through the furnace body (1), the heat insulation felt (2) and the heat insulation cylinder (3) to be communicated with an internal cavity of the heat insulation cylinder (3) is arranged at the lower part of the furnace body (1).
Description
Technical field
The utility model relates to a kind of thermal field of single crystal furnace gas barrier, belongs to the manufacturing apparatus field of silicon single crystal.
Background technology
Silicon single crystal generally is used to make unicircuit and other electronic components as a kind of semiconductor material, and the growing technology of silicon single crystal has two kinds at present: zone melting method and vertical pulling method, wherein vertical pulling method is the method that generally adopts at present.When vertical pulling method is made silicon single crystal, polycrystal be placed quartz crucible, make its fusing through heat, seed crystal is fallen to the polysilicon of fusing by the top then, by the temperature of control liquid level, make polysilicon crystallization again around seed crystal of fusing, generate the silicon single crystal rod of marshalling.The single crystal growing furnace that generally adopts can volatilize the silicon monoxide particle when unmelted polycrystalline silicon at present; next silicon oxide particle of the condition of high temperature can react with accessories such as graphite heater, plumbago crucibles, thus the life-span of having reduced accessories such as graphite heater and plumbago crucible.Can discharge heat when silicon single crystal is from the growth from solution crystallization in addition, can the slow down crystallization velocity of silicon single-crystal of this part heat influences the production efficiency of silicon single-crystal.
Summary of the invention
The purpose of this utility model is to overcome above-mentioned deficiency, the thermal field of single crystal furnace gas barrier that provides the carbon monoxide of a kind of heat that discharges can be with the silicon single-crystal crystallization time and silicon solution evaporation in time to discharge.
The purpose of this utility model is achieved in that a kind of thermal field of single crystal furnace gas barrier, it comprises body of heater, be provided with heat-preservation cylinder in the described body of heater, be provided with insulation quilt between body of heater and the heat-preservation cylinder, be provided with well heater in the described heat-preservation cylinder, well heater is fixed on bottom of furnace body by electrode bolts, and be connected with the heating electrode of bottom of furnace body, well heater central authorities are provided with crucible shaft, the crucible shaft upper end is provided with the crucible pallet, the lower end passes bottom of furnace body, be provided with plumbago crucible in the crucible pallet, be provided with quartz crucible in the plumbago crucible, be used to place polycrystal in the quartz crucible, the quartz crucible top is provided with guide shell, and described heat-preservation cylinder top is provided with the insulation cover that is connected with guide shell, be characterized in: described body of heater bottom is provided with vacuum pumping port, and described vacuum pumping port passes body of heater, insulation quilt and heat-preservation cylinder and heat-preservation cylinder intracavity inter-connection.
The material of described insulation quilt is a graphite felt.
It is inverted trapezoidal that described guide shell is, and is made up of interior refluence tube, thermal insulation layer and outer tube three parts that flow backwards, and wherein the material of thermal insulation layer also is a graphite felt.
Compared with prior art, the beneficial effects of the utility model are:
A kind of thermal field of single crystal furnace gas barrier of the utility model, the heat that it can be in time discharges during with the carbon monoxide of silicon solution evaporation in the quartz crucible and silicon single-crystal crystallization by vacuum pumping port is got rid of outside the body of heater, can avoid accessory reactions such as carbon monoxide and well heater, heat-preservation cylinder and plumbago crucible effectively on the one hand, prolong their work-ing life, the heat that has discharged when it has taken away the silicon single-crystal crystallization on the other hand, can improve the silicon single-crystal crystallization speed, and then enhance productivity.
Description of drawings
Fig. 1 is the structural representation of a kind of thermal field of single crystal furnace gas barrier of the utility model.
Wherein:
Body of heater 1, insulation quilt 2, heat-preservation cylinder 3, well heater 4, vacuum pumping port 5, heating electrode 6, crucible shaft 7, electrode bolts 8, crucible pallet 9, plumbago crucible 10, quartz crucible 11, refluence tube 12, insulation cover 13, polycrystal 14.
Embodiment
Referring to Fig. 1, the utility model relates to a kind of thermal field of single crystal furnace gas barrier, it comprises body of heater 1, be provided with heat-preservation cylinder 3 in the described body of heater 1, be provided with insulation quilt 2 between body of heater 1 and the heat-preservation cylinder 3, described body of heater 1 bottom is provided with vacuum pumping port 5, described vacuum pumping port 5 penetrates body of heater 1, insulation quilt 2 and heat-preservation cylinder 3 and heat-preservation cylinder 3 intracavity inter-connections, the material of described insulation quilt 2 is a graphite felt, be provided with well heater 4 in the described heat-preservation cylinder 3, well heater 4 is fixed on body of heater 1 bottom by electrode bolts 8, and be connected with the heating electrode 6 of body of heater 1 bottom, well heater 4 central authorities are provided with crucible shaft 7, crucible shaft 7 upper ends are provided with crucible pallet 9, the lower end passes body of heater 1 bottom, be provided with plumbago crucible 10 in the crucible pallet 9, be provided with quartz crucible 11 in the plumbago crucible 10, be used to place polycrystal 14 in the quartz crucible 11, quartz crucible 11 tops are provided with guide shell 12, it is inverted trapezoidal that guide shell 12 is, by interior refluence tube, thermal insulation layer and outer tube three parts that flow backwards are formed, and wherein the material of thermal insulation layer also is a graphite felt, and described heat-preservation cylinder 3 tops are provided with the insulation cover 13 that is connected with guide shell 12.
During the utility model work; shielding gas flows down from single crystal growing furnace top; under the effect of guide shell 12, enter in the quartz crucible 11; the heat that produces when silicon monoxide particle that produces when taking away polycrystal fusing in the crucible and single crystal crystallization; discharge from external vacuum pump through vacuum pumping port 5; avoided silicon monoxide on the one hand effectively and be detained in the body of heater 1 and accessory reactions such as well heater 4 and plumbago crucible 10; prolonged the work-ing life of these accessories; the heat protected gas of crystallization generation is taken away on the other hand; can improve crystallization speed, and then enhance productivity.
Claims (3)
1. thermal field of single crystal furnace gas barrier, it comprises body of heater (1), be provided with heat-preservation cylinder (3) in the described body of heater (1), be provided with insulation quilt (2) between body of heater (1) and the heat-preservation cylinder (3), be provided with well heater (4) in the described heat-preservation cylinder (3), well heater (4) is fixed on body of heater (1) bottom by electrode bolts (8), and the heating electrode (6) bottom body of heater (1) is connected, well heater (4) central authorities are provided with crucible shaft (7), crucible shaft (7) upper end is provided with crucible pallet (9), the lower end passes body of heater (1) bottom, be provided with plumbago crucible (10) in the crucible pallet (9), be provided with quartz crucible (11) in the plumbago crucible (10), be used to place polycrystal (14) in the quartz crucible (11), quartz crucible (11) top is provided with guide shell (12), described heat-preservation cylinder (3) top is provided with the insulation cover (13) that is connected with guide shell (12), it is characterized in that: described body of heater (1) bottom is provided with vacuum pumping port (5), and described vacuum pumping port (5) passes body of heater (1), insulation quilt (2) and heat-preservation cylinder (3) and heat-preservation cylinder (3) intracavity inter-connection.
2. a kind of thermal field of single crystal furnace gas barrier according to claim 1 is characterized in that: the material of described insulation quilt (2) is a graphite felt.
3. a kind of thermal field of single crystal furnace gas barrier according to claim 1 is characterized in that: described guide shell (12) is inverted trapezoidal, is made up of interior refluence tube, thermal insulation layer and outer tube three parts that flow backwards, and wherein the material of thermal insulation layer also is a graphite felt.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201020666408XU CN201908153U (en) | 2010-12-18 | 2010-12-18 | Thermal field exhaust device of single crystal furnace |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201020666408XU CN201908153U (en) | 2010-12-18 | 2010-12-18 | Thermal field exhaust device of single crystal furnace |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN201908153U true CN201908153U (en) | 2011-07-27 |
Family
ID=44300358
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201020666408XU Expired - Fee Related CN201908153U (en) | 2010-12-18 | 2010-12-18 | Thermal field exhaust device of single crystal furnace |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN201908153U (en) |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102618921A (en) * | 2012-04-11 | 2012-08-01 | 浙江金瑞泓科技股份有限公司 | Double-exhaust flat-plate epitaxial furnace |
| CN105525346A (en) * | 2014-10-21 | 2016-04-27 | 镇江大成新能源有限公司 | Novel single crystal furnace |
| CN105887207A (en) * | 2014-10-21 | 2016-08-24 | 镇江大成新能源有限公司 | Low-power-consumption monocrystal furnace |
| CN108179469A (en) * | 2018-02-13 | 2018-06-19 | 南京晶能半导体科技有限公司 | A kind of exhaust apparatus and single crystal growing furnace of semiconductor grade monocrystal stove |
| CN110846713A (en) * | 2019-12-25 | 2020-02-28 | 南京晶升能源设备有限公司 | Semiconductor silicon material growth furnace |
| CN112048758A (en) * | 2020-09-17 | 2020-12-08 | 乐山新天源太阳能科技有限公司 | Continuous Czochralski single crystal rod process |
| CN115323480A (en) * | 2022-08-24 | 2022-11-11 | 山西中电科新能源技术有限公司 | On-line thermal field regeneration method for czochralski crystal growing furnace |
-
2010
- 2010-12-18 CN CN201020666408XU patent/CN201908153U/en not_active Expired - Fee Related
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102618921A (en) * | 2012-04-11 | 2012-08-01 | 浙江金瑞泓科技股份有限公司 | Double-exhaust flat-plate epitaxial furnace |
| CN102618921B (en) * | 2012-04-11 | 2015-06-03 | 浙江金瑞泓科技股份有限公司 | Double-exhaust flat-plate epitaxial furnace |
| CN105525346A (en) * | 2014-10-21 | 2016-04-27 | 镇江大成新能源有限公司 | Novel single crystal furnace |
| CN105887207A (en) * | 2014-10-21 | 2016-08-24 | 镇江大成新能源有限公司 | Low-power-consumption monocrystal furnace |
| CN108179469A (en) * | 2018-02-13 | 2018-06-19 | 南京晶能半导体科技有限公司 | A kind of exhaust apparatus and single crystal growing furnace of semiconductor grade monocrystal stove |
| CN110846713A (en) * | 2019-12-25 | 2020-02-28 | 南京晶升能源设备有限公司 | Semiconductor silicon material growth furnace |
| CN112048758A (en) * | 2020-09-17 | 2020-12-08 | 乐山新天源太阳能科技有限公司 | Continuous Czochralski single crystal rod process |
| CN115323480A (en) * | 2022-08-24 | 2022-11-11 | 山西中电科新能源技术有限公司 | On-line thermal field regeneration method for czochralski crystal growing furnace |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C17 | Cessation of patent right | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20110727 Termination date: 20131218 |