CN210171403U - Cavity for synthesizing gem-grade diamond single crystal - Google Patents
Cavity for synthesizing gem-grade diamond single crystal Download PDFInfo
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- CN210171403U CN210171403U CN201920795285.0U CN201920795285U CN210171403U CN 210171403 U CN210171403 U CN 210171403U CN 201920795285 U CN201920795285 U CN 201920795285U CN 210171403 U CN210171403 U CN 210171403U
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Abstract
The utility model relates to a diamond processing technology field specifically is a synthetic cavity of using of precious stone level diamond single crystal, including the biography pressure section of thick bamboo, the fixed cover in inboard of biography pressure section of thick bamboo connects and is equipped with interior bushing, and the inboard middle section of interior bushing cup joints and is equipped with the quartz layer, and first shutoff ring is all fixed cup jointing in both sides about the inside of interior bushing, and first shutoff ring is the annular structure, and its inside all imbeds has electrically conductive end cap, and beneficial effect is: this practicality is provided with three insulating cylinder structures of group in the inside on quartzy layer, and the inside of insulating cylinder is fixed cup joints high temperature resistant layer, and the heating pipe is cup jointed to the inside on high temperature resistant layer is fixed, and both sides all are provided with the carbon source ring about the inside of heating pipe, under high temperature high pressure environment, can order about the carbon source ring and change into the diamond, compare the conventional art, this practicality is provided with a plurality of little cavitys inside big cavity, not only makes the inside temperature distribution of synthetic cavity even, and the synthetic efficiency also increases to some extent moreover.
Description
Technical Field
The utility model relates to a diamond processing technology field specifically is a cavity is used in synthetic gem grade diamond single crystal.
Background
At present, three common synthetic methods of artificial diamond include a direct method, a flux method and an epitaxial method, and in order to synthesize single crystal diamond, the common method is generally the direct method, and the principle is as follows: the instantaneous static ultrahigh pressure and high temperature technology, the dynamic ultrahigh pressure and high temperature technology or the mixing technology of the two is utilized to directly convert the carbon raw materials such as graphite and the like from solid state or molten state into diamond. The synthesis of diamond must be accomplished inside a special cavity structure, and the existing diamond synthesis cavity has the following defects:
1. because the inner space of the cavity is larger, the temperature distribution in the cavity is uneven, and the quality of the synthesized diamond is poor;
2. if a small-space cavity is adopted to synthesize diamond, the synthesis efficiency is too low, and the mass production and manufacturing are not facilitated. Therefore, the utility model provides a cavity for synthesizing gem grade diamond single crystal, which is used for solving the problems.
SUMMERY OF THE UTILITY MODEL
An object of the utility model is to provide a cavity is used in synthetic of precious stone level diamond single crystal to solve the problem that proposes among the above-mentioned background art.
In order to achieve the above object, the utility model provides a following technical scheme: a cavity for synthesizing gem grade diamond single crystals comprises a pressure transfer cylinder, wherein a lining cylinder is fixedly sleeved and connected on the inner side of the pressure transfer cylinder, a quartz layer is sleeved and connected on the middle section of the inner side of the lining cylinder, first plugging rings are fixedly sleeved and connected on the upper side and the lower side of the inner part of the lining cylinder, each first plugging ring is of an annular structure, a conductive plug is embedded in each first plugging ring, a metal sheet is attached to the inner end of each conductive plug, each metal sheet is of a disc-shaped sheet structure, graphite sheets are attached to the inner sides of the metal sheets, the graphite sheets are fixedly connected with the metal sheets, an insulating cylinder is arranged between the upper graphite sheet and the lower graphite sheet, the number of the insulating cylinders is three, the diameter of each insulating cylinder is smaller than the inner radius of the quartz layer, a high temperature resistant layer is fixedly sleeved and connected to the inner side of the insulating cylinder, a heating pipe is sleeved and connected to the upper side and, the third shutoff ring is the loop configuration, and its inside conducting rod that has all imbedded, the outer end of conducting rod all laminates with the graphite flake, and fixed metal tank is all pasted to the inner of conducting rod, the metal tank is discoid structure, and the installation cavity has all been seted up to its inner, just the inside carbon source ring that has all imbedded of installation cavity.
Preferably, both sides all fixedly cup joint second shutoff ring about the inside on quartzy layer, the outer end of second shutoff ring is laminated with the inner of first shutoff ring, and the inner of second shutoff ring flushes with the medial surface of graphite flake, and the inside diameter of second shutoff ring equals with the diameter of sheetmetal and graphite flake.
Preferably, the insulating cylinder, the high temperature resistant layer and the heating pipe are all of a circular tubular structure, the heights of the insulating cylinder, the high temperature resistant layer and the heating pipe are the same, and the insulating cylinder, the high temperature resistant layer and the heating pipe are closely attached to each other.
Preferably, the outer ends of the first plugging rings are all flush with the end part of the pressure transmission cylinder, and the inner ends of the first plugging rings are all tightly attached to the end part of the quartz layer.
Compared with the prior art, the beneficial effects of the utility model are that: this practicality is provided with three insulating cylinder structures of group in the inside on quartzy layer, and the inside of insulating cylinder is fixed cup joints high temperature resistant layer, and the heating pipe is cup jointed to the inside on high temperature resistant layer is fixed, and both sides all are provided with the carbon source ring about the inside of heating pipe, under high temperature high pressure environment, can order about the carbon source ring and change into the diamond, compare the conventional art, this practicality is provided with a plurality of little cavitys inside big cavity, not only makes the inside temperature distribution of synthetic cavity even, and the synthetic efficiency also increases to some extent moreover.
Drawings
FIG. 1 is a schematic structural view of the present invention;
fig. 2 is a cross-sectional view taken along the line a-a of the present invention.
In the figure: the device comprises a pressure transmission cylinder 1, a lining cylinder 2, a quartz layer 3, a first plugging ring 4, a conductive plug 5, a second plugging ring 6, a metal sheet 7, a graphite sheet 8, an insulating cylinder 9, a high temperature resistant layer 10, a heating pipe 11, a third plugging ring 12, a conductive rod 13, a metal groove 14 and a carbon source ring 15.
Detailed Description
The technical solutions in the embodiments of the present invention will be described clearly and completely with reference to the accompanying drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only some embodiments of the present invention, not all embodiments. Based on the embodiments in the present invention, all other embodiments obtained by a person skilled in the art without creative work belong to the protection scope of the present invention.
Referring to fig. 1-2, the present invention provides a technical solution: the utility model provides a synthetic cavity of using of precious stone level diamond single crystal, including pressure transfer section of thick bamboo 1, the fixed cover in inboard of pressure transfer section of thick bamboo 1 connects and is equipped with interior lining section of thick bamboo 2, the inboard middle section of interior lining section of thick bamboo 2 cup joints and is equipped with quartz layer 3, both sides are all fixed cup joints first shutoff ring 4 about the inside of interior lining section of thick bamboo 2, pressure transfer section of thick bamboo 1 is the pyrophyllite material, it is insulating, high temperature resistant characteristic to have, interior lining section of thick bamboo 2 is metal tubular structure, quartz layer 3 is made for the quartz material, first shutoff ring 4 is fixed cup joints inside interior lining section of thick bamboo 2, its effect is.
Its inside all is embedded into conducting rod 13, and conducting rod 13's outer end all laminates with graphite flake 8, and fixed metal groove 14 is all pasted to conducting rod 13's the inner, and metal groove 14 is discoid structure, and the installation cavity has all been seted up to its inner, and the inside carbon source ring 15 that all embeds of installation cavity.
The both sides are all fixed cup joints second shutoff ring 6 about the inside of quartz capsule 3, and the outer end of second shutoff ring 6 is laminated with the inner of first shutoff ring 4, and the inner of second shutoff ring 6 flushes with the medial surface of graphite flake 8, and the inboard diameter of second shutoff ring 6 equals with the diameter of sheetmetal 7 and graphite flake 8, and the structural position of second shutoff ring 6 is shown in figure 1, and its effect is fixed sheetmetal 7 and graphite flake 8.
The insulating cylinder 9, the high temperature resistant layer 10 and the heating pipe 11 three are all round tubular structures, the heights of the three are the same, the two adjacent insulating cylinders are tightly attached, the structural positions of the insulating cylinder 9 are as shown in fig. 2, and the number of the insulating cylinders is three.
The outer end of the first plugging ring 4 is flush with the end part of the pressure transmission cylinder 1, and the inner end of the first plugging ring 4 is tightly attached to the end part of the quartz layer 3.
The working principle is as follows: the utility model discloses in, the inside fixed lining section of thick bamboo 2 that cup joints of a biography pressure section of thick bamboo 1, the inside fixed quartz layer 3 that cup joints of lining section of thick bamboo 2, and the inside of quartz layer 3 forms a big cavity. A plurality of insulating cylinders 9 are arranged in the quartz layer 3, a high-temperature-resistant layer 10 is fixedly sleeved in the insulating cylinders 9, a heating pipe 11 is fixedly sleeved in the high-temperature-resistant layer 10, and carbon source rings 15 are arranged on the upper side and the lower side of the inside of the heating pipe 11. In the process of synthesizing diamond, pressure is applied to the upper end and the lower end of the device, the conductive plug 5 is used for conducting electricity, so that the heating pipe 11 generates heat, a high-temperature and high-pressure environment is formed in the heating pipe 11, and the carbon source ring 15 can be driven to be directly converted into diamond crystals under appropriate pressure intensity and temperature (50-100 kb, 1100-3000 ℃).
Although embodiments of the present invention have been shown and described, it will be appreciated by those skilled in the art that changes, modifications, substitutions and alterations can be made in these embodiments without departing from the principles and spirit of the invention, the scope of which is defined in the appended claims and their equivalents.
Claims (4)
1. The utility model provides a cavity is used in synthetic diamond single crystal of precious stone level, includes pressure transmission cylinder (1), its characterized in that: the inner side of the pressure transfer cylinder (1) is fixedly sleeved with a lining cylinder (2), the middle section of the inner side of the lining cylinder (2) is sleeved with a quartz layer (3), the upper side and the lower side of the inner part of the lining cylinder (2) are fixedly sleeved with first plugging rings (4), each first plugging ring (4) is of an annular structure, a conductive plug (5) is embedded into each first plugging ring, the inner end of each conductive plug (5) is provided with a metal sheet (7) in an attached manner, each metal sheet (7) is of a disc-shaped sheet structure, the inner side of each metal sheet is provided with a graphite sheet (8) in an attached manner, each graphite sheet (8) is fixedly connected with each metal sheet (7), an insulating cylinder (9) is arranged between the upper graphite sheet (8) and the lower graphite sheet (8), the number of the insulating cylinders (9) is three, the diameter of each insulating cylinder (9) is smaller than the inner side radius of the quartz layer (3), and the inner, the inside of high temperature resistant layer (10) is cup jointed and is equipped with heating pipe (11), the inside upper and lower both sides of heating pipe (11) are all fixed and are cup jointed third shutoff ring (12), third shutoff ring (12) are the loop configuration, and its inside has all been embedded into conducting rod (13), the outer end of conducting rod (13) all laminates with graphite flake (8), and fixed metal slot (14) are all pasted to the inner of conducting rod (13), metal slot (14) are discoid structure, and the installation cavity has all been seted up to its inner, just the inside carbon source ring (15) that has all been embedded into of installation cavity.
2. A chamber for synthesis of a gem grade diamond monocrystal as claimed in claim 1, characterized in that: the inside upper and lower both sides of quartz capsule (3) all fixedly cup joint second shutoff ring (6), the outer end of second shutoff ring (6) and the laminating of the inner of first shutoff ring (4), the medial surface of the inner and graphite flake (8) of second shutoff ring (6) flush, and the diameter of the inboard diameter of second shutoff ring (6) equals with sheetmetal (7) and graphite flake (8).
3. A chamber for synthesis of a gem grade diamond monocrystal as claimed in claim 1, characterized in that: the insulation cylinder (9), the high temperature resistant layer (10) and the heating pipe (11) are all of a circular tubular structure, the heights of the insulation cylinder, the high temperature resistant layer and the heating pipe are the same, and the insulation cylinder, the high temperature resistant layer and the heating pipe are tightly attached to each other.
4. A chamber for synthesis of a gem grade diamond monocrystal as claimed in claim 1, characterized in that: the outer end of the first plugging ring (4) is flush with the end part of the pressure transmission cylinder (1), and the inner end of the first plugging ring (4) is tightly attached to the end part of the quartz layer (3).
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CN201920795285.0U CN210171403U (en) | 2019-05-30 | 2019-05-30 | Cavity for synthesizing gem-grade diamond single crystal |
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CN201920795285.0U CN210171403U (en) | 2019-05-30 | 2019-05-30 | Cavity for synthesizing gem-grade diamond single crystal |
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Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN115041099A (en) * | 2022-07-19 | 2022-09-13 | 彭伟华 | Diamond synthesis block and preparation method of diamond |
GB2609511A (en) * | 2021-07-30 | 2023-02-08 | Lam Stephanie Mak Yeuk | Memorial diamond synthesizing apparatus |
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2019
- 2019-05-30 CN CN201920795285.0U patent/CN210171403U/en active Active
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB2609511A (en) * | 2021-07-30 | 2023-02-08 | Lam Stephanie Mak Yeuk | Memorial diamond synthesizing apparatus |
GB2609511B (en) * | 2021-07-30 | 2023-10-04 | Uk Genetic Diamond Ltd | Memorial diamond synthesizing apparatus |
CN115041099A (en) * | 2022-07-19 | 2022-09-13 | 彭伟华 | Diamond synthesis block and preparation method of diamond |
CN115041099B (en) * | 2022-07-19 | 2023-11-17 | 彭伟华 | Diamond synthetic block and preparation method of diamond |
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