CN214672047U - PTC thermistor with high-reliability glass-sealed diode structure - Google Patents
PTC thermistor with high-reliability glass-sealed diode structure Download PDFInfo
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- CN214672047U CN214672047U CN202023214438.XU CN202023214438U CN214672047U CN 214672047 U CN214672047 U CN 214672047U CN 202023214438 U CN202023214438 U CN 202023214438U CN 214672047 U CN214672047 U CN 214672047U
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Abstract
The utility model discloses a PTC thermistor of high reliable glass package diode structure, including the glass package tube, first connecting lead and second connecting lead, the glass package tube has the encapsulation lumen, the thermistor chip is installed to the encapsulation lumen of glass package tube, first connecting lead comprises first lead and first pin post, the second connecting lead comprises second lead and second pin post, first pin post cooperation is installed in glass package tube upper portion region, second pin post cooperation is installed in glass package tube lower part region, first pin post tip is through first welding piece and thermistor chip upper surface welded fastening, second pin post tip is through second welding piece and thermistor chip lower surface welded fastening. The utility model discloses a glass package tube carries out whole encapsulation, and its resistance chip has realized good transitional coupling with the connecting lead, can effectively eliminate contact resistance, has advantages such as good PTC effect, quality are light, stability is good, high reliability, longe-lived.
Description
Technical Field
The utility model relates to a PTC thermistor especially relates to a PTC thermistor of high-reliability glass-sealed diode structure.
Background
A PTC thermistor (Positive Temperature Coefficient) is a resistor whose resistance value increases with the increase of its own Temperature or ambient Temperature, and can be used for Temperature measurement, Temperature control, Temperature compensation, and the like in an electronic circuit by utilizing the characteristic that the resistance value changes with the change of Temperature. The commonly used semiconductor material monocrystalline silicon has a certain PTC effect under a certain condition, the resistance-temperature characteristic curve of the PTC thermistor made of the monocrystalline silicon is approximately in a linear change trend, the resistance temperature coefficient is 0.6-1.0%/K, and the PTC thermistor has the characteristics of good stability, wide application temperature range, high precision and the like and is commonly used for temperature measurement, temperature control, temperature compensation and the like in electronic circuits. With the development of electronic products toward miniaturization, reliability, and weight reduction, it has been a technical problem to be solved how to realize the use of single crystal silicon as a thermistor chip and manufacture a highly reliable, miniaturized, lightweight, and stabilized PTC thermistor.
SUMMERY OF THE UTILITY MODEL
Weak point to prior art exists, the utility model aims to provide a PTC thermistor of high-reliability glass package diode structure, at first the thermistor chip is by the single crystal silicon piece base member, inner electrode (nickel electrode), outer electrode (gold electrode) are constituteed, secondly form good ohmic contact through high temperature alloying between single crystal silicon piece base member and the nickel electrode, encapsulate in glass package tube encapsulation tube intracavity through packaging technology between at last thermistor chip and the connecting lead, at encapsulation in-process thermistor chip through the surperficial gold electrode with first connecting lead and second connecting lead between form metal transitional coupling by first welding piece and second welding piece, the produced contact resistance of traditional mechanical crimping connection has effectively been eliminated, guarantee the reliability of product long-term use under various temperature environment.
The purpose of the utility model is realized through the following technical scheme:
a PTC thermistor with a high-reliability glass-sealed diode structure comprises a thermistor chip, a glass-sealed tube shell, a first connecting lead and a second connecting lead, wherein the glass-sealed tube shell is provided with a sealed tube cavity, the thermistor chip is arranged in the middle of the sealed tube cavity of the glass-sealed tube shell, the first connecting lead is composed of a first lead and a first lead post, the second connecting lead is composed of a second lead and a second lead post, the first lead post is installed in the upper area of the sealed tube cavity of the glass-sealed tube shell in a matching mode, the second lead post is installed in the lower area of the sealed tube cavity of the glass-sealed tube shell in a matching mode, the thermistor chip, the first connecting lead and the second connecting lead are packaged in the tube cavity of the glass-sealed tube shell through shrinkage force generated by shrinkage in the cooling process after the glass-sealed tube shell is softened at high temperature, in addition, the end part of the first lead post is in metal transition connection with the upper surface of the thermistor chip through a first welding sheet, and the end part of the second lead post is in metal transition connection with the lower surface of the thermistor chip through a second welding sheet.
The utility model discloses a preferred resistance chip structure technical scheme is: the thermistor chip comprises a monocrystalline silicon wafer with a nickel electrode, and a nickel electrode layer is arranged outside the monocrystalline silicon wafer with the nickel electrode.
The utility model discloses the preferred resistance chip structure technical scheme of second is: the resistance chip comprises a monocrystalline silicon piece with a nickel electrode, the monocrystalline silicon piece with the nickel electrode is formed by alloying the monocrystalline silicon piece and a nickel electrode layer at high temperature, and a gold electrode layer is formed on the surface of the monocrystalline silicon piece with the nickel electrode by adopting a chemical deposition method.
The utility model discloses a further preferred technical scheme of resistance chip is: and a gold electrode layer is formed outside the nickel electrode layer of the resistance chip by adopting a chemical deposition method.
Preferably, the first welding piece and the second welding piece are both gold-tin welding pieces Au80Sn20, the melting point of the gold-tin welding Au80Sn20 is 280 +/-5 ℃, the gold-tin welding Au80Sn20 and the outer electrode of the thermistor chip have good weldability, and the first lead and the second lead are both Dumet wire leads. The first lead post and the first welding sheet have good weldability, and the second lead post and the second welding sheet have good weldability.
Preferably, the first lead post is connected to the thermistor chip by welding via the first welding tab, and the second lead post is connected to the thermistor chip by welding via the second welding tab.
Preferably, the first lead post, the first welding sheet, the thermistor chip, the second welding sheet and the second lead post are packaged in a packaging tube cavity of the glass-sealed tube shell through high-temperature glass at 585 ℃ under the protection of nitrogen.
Preferably, the dumet wire lead is a copper-clad nickel-iron alloy wire, the surface of the dumet wire lead is covered with a borate layer, and the thermal expansion coefficients of the thermistor chip, the first connecting lead, the second connecting lead and the glass-sealed tube shell are all 10-6In the order of%/° c.
Preferably, the monocrystalline silicon wafer with the nickel electrode has ohmic contact.
Preferably, the size of the resistance value of the thermistor chip can be adjusted by the size of the resistor chip.
Preferably, the first welding sheets respectively form metal transition connection between the thermistor chip and the first lead post in the packaging process. And the second welding sheets respectively form metal transition connection between the thermistor chip and the second lead post in the packaging process.
Preferably, the first welding sheets do not have contact resistance generated by a mechanical compression joint structure between the thermistor chip and the first lead post during packaging. The second welding sheet does not have contact resistance generated by a mechanical compression joint structure between the thermistor chip and the second lead post in the packaging process.
Preferably, the thermistor chip has a resistivity of (2 to 500) Ω.
Compared with the prior art, the utility model, have following advantage and beneficial effect:
(1) the utility model discloses thermistor chip and first connecting lead post form metal transitional coupling through first welding piece welding, thermistor chip and second connecting lead pass through second welding piece welding and form metal transitional coupling, and encapsulate in the glass package tube simultaneously, its thermistor chip is the base member by monocrystalline silicon piece and forms ohmic contact with the nickel electrode layer, the chip surface still adopts the chemical deposition mode to form one deck gold electrode, then adopt good welding performance between gold electrode and the welding piece, realize the good welding between thermistor chip and the lead wire in glass package in-process, the contact resistance that simple mechanical crimping structure arouses has effectively been eliminated, guarantee the reliability of product long-term use under various temperature environment.
(2) The utility model has the advantages of the PTC effect, resistance temperature characteristic is similar linear, comprises metal material and inorganic material, has that the reliability is high, small, the quality is light, stability is good, longe-lived, and its appearance size can be adjusted according to actual demand, can satisfy electronic components stabilization, miniaturization, lightweight development demand.
Drawings
Fig. 1 is a schematic structural view of the present invention;
fig. 2 is a sectional view of a thermistor chip mounted in a glass sealed envelope in a fitting manner;
FIG. 3 shows the resistance ratio (R) of the present inventionT/R25) -temperature profile.
Wherein, the names corresponding to the reference numbers in the drawings are:
1-glass sealed tube shell, 2-thermistor chip, 3-first welding sheet, 4-second welding sheet, 5-first connecting lead, 51-first lead, 52-first lead column, 6-second connecting lead, 61-second lead and 62-second lead column.
Detailed Description
The present invention will be described in further detail with reference to the following examples:
examples
As shown in fig. 1-2, a PTC thermistor with a highly reliable glass-sealed diode structure comprises a glass-sealed tube 1, a first connecting lead 5 and a second connecting lead 6, wherein the glass-sealed tube 1 has a sealed tube cavity, a thermistor chip 2 is mounted in the middle of the sealed tube cavity of the glass-sealed tube 1, the first connecting lead 5 is composed of a first lead 51 and a first lead post 52, the second connecting lead 6 is composed of a second lead 61 and a second lead post 62, the first lead post 52 is mounted in the upper region of the sealed tube cavity of the glass-sealed tube 1 in a matching manner, the second lead post 62 is mounted in the lower region of the sealed tube cavity of the glass-sealed tube 1 in a matching manner, the end of the first lead post 52 is fixed to the upper surface of the thermistor chip 2 by a first welding sheet 3 (preferably, the end of the first lead post 52 is connected to the thermistor chip 2 by a transition metal welding sheet 3), the end of the second lead post 62 is fixed to the lower surface of the thermistor chip 2 by welding via a second welding tab 4 (preferably, the end of the second lead post 62 is connected to the thermistor chip 2 by transition metal welding via the second welding tab 4).
The utility model discloses a first preferred thermistor chip structure technical scheme is: the thermistor chip 2 comprises a monocrystalline silicon piece substrate, wherein a nickel electrode layer is arranged outside the monocrystalline silicon piece substrate; a gold electrode layer is formed outside the nickel electrode layer of the thermistor chip 2 by adopting a chemical deposition method. Namely, the thermistor chip 2 comprises a monocrystalline silicon piece substrate, an inner electrode and an outer electrode, wherein the inner electrode of the monocrystalline silicon piece substrate is a nickel electrode, the nickel electrode has poor welding performance, the outer electrode is a gold electrode, and the gold electrode has good welding performance. The utility model discloses thermistor chip 2 has good PTC characteristic, and its resistance value increases along with the temperature increases, and the stable performance, resistance temperature curve are approximate linear curve, and with first welding piece 3, second welding piece 4 between the welding nature good. The external gold electrode of the nickel electrode layer of the thermistor chip 2 is also formed by a chemical deposition method.
The utility model discloses the preferred thermistor chip structure technical scheme of second is: the thermistor chip 2 comprises a monocrystalline silicon wafer with a nickel electrode, the nickel electrode is formed by alloying a monocrystalline silicon wafer substrate and a nickel electrode layer at high temperature, the monocrystalline silicon wafer with the nickel electrode has good ohmic contact, and a gold electrode layer is formed on the surface of the monocrystalline silicon wafer substrate by adopting a chemical deposition method. In this way, the thermistor chip 2 has ohmic contact characteristics, the ohmic contact characteristics of the thermistor chip 2 are formed by alloying a single crystal silicon wafer substrate with a nickel electrode, and the nickel electrode on the surface of the single crystal silicon wafer substrate is formed by a chemical deposition method.
The first welding piece 3 and the second welding piece 4 of this embodiment are gold-tin welding pieces Au80Sn20, the melting point of the gold-tin welding Au80Sn20 is 280 ℃ +/-5 ℃, the gold-tin welding Au80Sn20 and the thermistor chip 2 outer electrode have good weldability, the first lead 51 and the second lead 61 are Dumet wire leads, the first lead post 52 and the second lead post 62 are copper posts, the first lead post 52 and the first welding piece 3 have good weldability, and the second lead post 62 and the second welding piece 4 have good weldability.
The first soldering terminal 3 of the present embodiment forms a metal transition connection between the thermistor chip 2 and the first lead post 52 respectively during the packaging process; the second soldering terminal 4 forms a metal transition connection between the thermistor chip 2 and the second lead post 62, respectively, during the packaging process. The first soldering terminal 3 of the present embodiment has no contact resistance generated by the mechanical crimping structure between the thermistor chip 2 and the first lead post 52, respectively, during the packaging process; the second bonding pads 4 have no contact resistance caused by the mechanical press-fit structure between the thermistor chip 2 and the second lead post 62, respectively, during the packaging process. The first lead post 52, the first welding sheet 3, the thermistor chip 2, the second welding sheet 4 and the second lead post 62 are welded at high temperature in the packaging tube cavity of the glass-sealed tube shell 1 under the condition of oxygen-free nitrogen protection, namely, the first lead post 52, the first soldering terminal 3, the thermistor chip 2, the second soldering terminal 4, and the second lead post 62 are put into the package cavity of the glass package 1 in the manner shown in fig. 1, and in a graphite grinder, the structure is formed by high-temperature sealing under the protection of nitrogen, when in concrete manufacture, the first lead post 52, the first welding sheet 3, the thermistor chip 2, the second welding sheet 4 and the second lead post 62 are put into a packaging tube cavity of the glass sealing tube shell 1, the glass sealing tube shell 1 is put into a graphite tool, and then the mounted graphite tool is placed into a vacuum welding and packaging furnace, and is sealed at high temperature of 585 ℃ and under the protection of nitrogen to form an integral structure. The utility model discloses a first welding piece 3, second welding piece 4 is heated at high temperature packaging in-process and is melted, form good infiltration between one end and the 2 surperficial gold electrodes of thermistor chip, one end and first pin 52 or second pin 62 form good infiltration, form good metal transitional coupling between thermistor chip 2 and dumet wire lead wire in the encapsulation cooling process, effectually eliminated by the produced contact resistance of traditional mechanical crimping between thermistor chip 2 and the dumet wire lead wire, guarantee the reliability of the long-term effective use of product under different temperature environment.
The PTC thermistor of this embodiment has the dimensions shown in Table 1 below and a weight of 0.05-0.10 g.
| L1(mm) | Φ1(mm) | L2(mm) | Φ2(mm) |
| 3.57～4.01 | 1.83～1.88 | 28.20～28.73 | 0.49～0.51 |
TABLE 1
The utility model discloses PTC thermistor resistance temperature characteristic curve sees figure 3, the utility model discloses thermistor is seen as following table 2 in the resistance variation condition of high low temperature test in-process.
TABLE 2
The resistance value change condition of the thermistor in the 1000h load life test process is shown in the following table 3.
TABLE 3
The above description is only exemplary of the present invention and should not be taken as limiting the scope of the present invention, as any modifications, equivalents, improvements and the like made within the spirit and principles of the present invention are intended to be included within the scope of the present invention.
Claims (7)
1. A PTC thermistor with a high-reliability glass-sealed diode structure is characterized in that: the glass-sealed tube comprises a thermistor chip (2), a first welding sheet (3), a second welding sheet (4), a glass-sealed tube shell (1), a first connecting lead (5) and a second connecting lead (6), wherein the glass-sealed tube shell (1) is provided with a packaging tube cavity, the thermistor chip (2) is arranged in the middle of the packaging tube cavity of the glass-sealed tube shell (1), the first connecting lead (5) is composed of a first lead (51) and a first lead post (52), the second connecting lead (6) is composed of a second lead (61) and a second lead post (62), the first lead post (52) is arranged in the upper area of the packaging tube cavity of the glass-sealed tube shell (1) in a matching mode, the second lead post (62) is arranged in the lower area of the packaging tube cavity of the glass-sealed tube shell (1) in a matching mode, and transition metal welding connection is carried out between the end part of the first lead post (52) and the thermistor chip (2) through the first welding sheet (3), the end part of the second lead post (62) is connected with the thermistor chip (2) through a second welding sheet (4) in a transition metal welding mode.
2. A PTC thermistor of high reliability glass-sealed diode structure according to claim 1, characterized in that: the thermistor chip (2) comprises a monocrystalline silicon piece substrate, an inner electrode and an outer electrode, wherein the inner electrode is a nickel electrode, and the outer electrode is a gold electrode.
3. A PTC thermistor of high reliability glass-sealed diode structure according to claim 1, characterized in that: the thermistor chip (2) has ohmic contact characteristics, the thermistor chip (2) is formed by alloying a monocrystalline silicon piece substrate and a nickel electrode, and the nickel electrode on the surface of the monocrystalline silicon piece substrate is formed by adopting a chemical deposition method.
4. A PTC thermistor of high reliability glass-sealed diode structure according to claim 2, characterized in that: and a gold electrode outside the nickel electrode layer of the thermistor chip (2) is formed by adopting a chemical deposition method.
5. A PTC thermistor of high reliability glass-sealed diode structure according to claim 1, characterized in that: the first lead (51) and the second lead (61) are Dumet wire leads, and the first lead column (52) and the second lead column (62) are copper columns.
6. A PTC thermistor of high reliability glass-sealed diode structure according to claim 1, characterized in that: the first lead post (52), the first welding sheet (3), the thermistor chip (2), the second welding sheet (4) and the second lead post (62) are formed by high-temperature welding and sealing in a packaging tube cavity of the glass sealing tube shell (1) under the condition of oxygen-free nitrogen protection.
7. A PTC thermistor of high reliability glass-sealed diode structure according to claim 1, characterized in that: the thermal expansion coefficients of the thermistor chip (2), the first connecting lead (5), the second connecting lead (6) and the glass sealing tube shell (1) are all 10-6In the order of%/° c.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202023214438.XU CN214672047U (en) | 2020-12-28 | 2020-12-28 | PTC thermistor with high-reliability glass-sealed diode structure |
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| Application Number | Priority Date | Filing Date | Title |
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| CN202023214438.XU CN214672047U (en) | 2020-12-28 | 2020-12-28 | PTC thermistor with high-reliability glass-sealed diode structure |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112837875A (en) * | 2020-12-28 | 2021-05-25 | 成都宏明电子股份有限公司 | High-reliability glass-sealed diode PTC thermistor and preparation method thereof |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112837875A (en) * | 2020-12-28 | 2021-05-25 | 成都宏明电子股份有限公司 | High-reliability glass-sealed diode PTC thermistor and preparation method thereof |
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