CN214612755U

CN214612755U - Vertical plasma enhanced chemical vapor deposition structure

Info

Publication number: CN214612755U
Application number: CN202120453415.XU
Authority: CN
Inventors: 范继良
Original assignee: Individual
Current assignee: Individual
Priority date: 2021-03-02
Filing date: 2021-03-02
Publication date: 2021-11-05
Anticipated expiration: 2031-03-02

Abstract

The utility model discloses a vertical plasma enhanced chemical vapor deposition structure, which comprises a box body, a gas box mechanism, an electrode mechanism, a rotary driving mechanism and a carrier, wherein the gas box mechanism is arranged in a cavity of the box body, the gas box mechanism comprises a gas box body with a hollow structure, the center of the top surface of the gas box body is provided with an air inlet which is communicated with the gas cavity and is arranged at the top of the box body in a penetrating way, the bottom surface of the gas box body is provided with parallel and equidistant baffles, the bottom surface of the gas box body between two adjacent baffles is provided with a strip-shaped air outlet which is communicated with the gas cavity in a penetrating way, the electrode mechanism comprises a supporting body, the carrier is provided with a clamping groove which is used for clamping one side of a workpiece, the carrier is arranged at the output end of the rotary driving mechanism, the carrier rotates under the driving of the rotary driving mechanism, so as to drive the workpiece to turn over, a deposition chamber is formed between the carrier and the ionization chamber, and the box body is provided with an air suction opening connected with the deposition chamber. Therefore, the utility model discloses a rectilinear plasma reinforcing chemical vapor deposition structure has the advantage that the deposit effect is good and efficient.

Description

Vertical plasma enhanced chemical vapor deposition structure

Technical Field

The utility model relates to a rectilinear plasma reinforcing chemical vapor deposition structure especially relates to a rectilinear plasma reinforcing chemical vapor deposition structure that can carry out the ionization to multiple different gases simultaneously.

Background

With the rapid development of economic construction, the microelectronic technology has been developed rapidly, and the development and use of Plasma Enhanced Chemical Vapor Deposition (hereinafter referred to as PECVD) equipment are becoming more and more widespread. PECVD equipment is equipment for chemical deposition that uses high frequency power glow discharge to generate plasma, thereby reducing the deposition temperature due to the presence of plasma. At present, PECVD equipment is widely used in the liquid crystal display industry, the solar cell industry, the manufacturing industry of semiconductor devices and large scale integrated circuits, and the like.

Plasma Enhanced Chemical Vapor Deposition (PECVD) is commonly used to deposit layers of materials on substrates, such as transparent substrates or semiconductor wafers for flat panel displays. PECVD is generally accomplished by introducing a precursor gas or gas mixture into a vacuum chamber containing the substrate, which is energized (e.g., excited) into a plasma by applying radio frequency to the precursor gas or gas mixture, which plasma can react with each other or with substrate surface species to deposit a layer of material.

The existing ionization device can only deposit a plurality of layers of deposition layers on one surface of a workpiece at the same time, when the other surface of the workpiece needs to be deposited, the other surface needs to be taken out and deposited, the deposition efficiency is low, and the operation is complicated.

Therefore, a vertical pecvd structure is needed.

SUMMERY OF THE UTILITY MODEL

An object of the utility model is to provide a can carry out deposit and deposit effect good, efficient and the suitability strong rectilinear plasma reinforcing chemical vapor deposition structure to the two sides of work piece.

In order to achieve the above object, the vertical plasma enhanced chemical vapor deposition structure of the present invention comprises a box body, and a gas box mechanism, an electrode mechanism, a rotation driving mechanism and a carrier arranged in the cavity of the box body, wherein the gas box mechanism comprises a gas box body with a hollow structure, the hollow structure forms a gas cavity, the center of the top surface of the gas box body is provided with gas inlets communicated with the gas cavity and penetrating the top of the box body, the bottom surface of the gas box body is provided with parallel and equidistant partition plates, the bottom surface of the gas box body between two adjacent partition plates is provided with strip-shaped gas outlets communicated with the gas cavity, the gas outlets are arranged in parallel and equidistant manner, an ionization chamber is formed between two adjacent partition plates, the electrode mechanism comprises a supporting body, parallel and equidistant extension of electrode strips corresponding to the ionization chamber are arranged on the supporting body, the electrode strip is correspondingly suspended in the ionization chamber, the carrier is positioned below the ionization chamber, the carrier is provided with a clamping groove used for clamping one side of a workpiece, the carrier is installed at the output end of the rotary driving mechanism and driven by the rotary driving mechanism to rotate so as to drive the workpiece to turn over, a deposition chamber is formed between the carrier and the ionization chamber, and the box body is provided with an air suction port connected with the deposition chamber.

Preferably, the box body is arranged in a vacuum mode.

Preferably, the rotation driving mechanism includes a connection plate and a rotation device, the connection plate is hollow, the connection plate is installed below the ionization chamber, the rotation device is installed on the connection plate, the carrier is installed at an output end of the rotation device, and the carrier rotates under the driving of the rotation device.

Specifically, the connecting plate is spaced from the bottom end face of the box body.

Specifically, the carrier and the rotating device are close to the side wall of the box body.

Preferably, the electrode strip suspended in the ionization chamber is located directly below the air outlet.

Preferably, the air inlet is further connected with an air inlet pipe.

Preferably, the air pumping port is further connected with an air pumping pipe.

Compared with the prior art, the vertical plasma enhanced chemical vapor deposition structure of the utility model combines the box body, the gas box mechanism, the electrode mechanism, the rotary driving mechanism and the carrier, the gas box mechanism comprises a gas box body with a hollow structure, the hollow structure forms an air cavity, the center of the top surface of the gas box body is provided with air inlets which are communicated with the air cavity and penetrate through the top of the box body, the bottom surfaces of the gas box body are provided with parallel and equidistant clapboards, the bottom surface of the gas box body between two adjacent clapboards is provided with strip-shaped air outlets which are communicated with the air cavity in a penetrating way, the air outlets are arranged in a parallel and equidistant way, an ionization cavity is formed between two adjacent clapped boards, the electrode mechanism comprises a bearing body, electrode strips which are parallel and equidistant and extend out and correspond to the ionization cavity are correspondingly suspended in the ionization cavity, the carrier is located the below of ionization chamber, and the carrier has the draw-in groove that is used for one side of chucking work piece to one side of chucking work piece can not shelter from the work piece yet and influence the whole deposition effect of work piece, and the carrier is installed in rotary driving mechanism's output, and the carrier rotates under rotary driving mechanism's drive, in order to drive the work piece upset, forms the deposit room between carrier and the ionization chamber, and the extraction opening of being connected with the deposit room is seted up to the box, thereby drives the gaseous deposit of deposit on the work piece of carrier. In other words, during operation, the partition board and the electrode strips are respectively communicated with different electrodes, so that an electric field is formed between the partition board and the electrode strips, the ionization chamber is communicated with the air chamber through the strip-shaped air outlets, and the partition board and the air outlets forming the ionization chamber are distributed at equal intervals, so that gas entering the ionization chamber from the air chamber is uniformly dispersed in the ionization chamber along with air suction of the air suction port, the gas uniformly dispersed in the ionization chamber is subjected to equivalent ionization in the three-dimensional electric field formed by the partition board and the electrode strips, and a uniform deposition layer is formed on a workpiece on the carrier through the deposition chamber due to uniform ionization of the gas, so that the uniformity of the deposition layer is effectively improved; in addition, the carrier can turn over to drive the workpiece to turn over, so that deposition on two sides of the workpiece can be automatically completed, and the deposition device is excellent in deposition effect, high in efficiency and strong in applicability.

Drawings

Fig. 1 is a schematic structural diagram of a vertical plasma enhanced chemical vapor deposition structure according to the present invention.

Fig. 2 is a schematic structural diagram of a rotation driving mechanism, a carrier and a workpiece of the vertical plasma enhanced chemical vapor deposition structure of the present invention.

Fig. 3 is a schematic perspective view of the vertical pecvd structure of the present invention when the cell mechanism and the electrode mechanism are combined.

FIG. 4 is a schematic view of another angle of the vertical PECVD structure of FIG. 3.

FIG. 5 is a schematic perspective view of the vertical PECVD structure of FIG. 3 with the cassette mechanism and the electrode mechanism separated.

Detailed Description

In order to explain technical contents and structural features of the present invention in detail, the following description is made with reference to the embodiments and the accompanying drawings.

Referring to fig. 1 to 5, a vertical plasma enhanced chemical vapor deposition structure 100 of the present invention includes a box 1, a gas box mechanism 2, an electrode mechanism 3, a rotation driving mechanism 4 and a carrier 5, wherein the box 1 is vacuum-disposed, the gas box mechanism 2, the electrode mechanism 3, the rotation driving mechanism 4 and the carrier 5 are disposed in a cavity of the box 1, the box 1 is vacuum-disposed so as to effectively avoid ionization from being affected, the gas box mechanism 2, the electrode mechanism 3, the carrier 5 and the rotation driving mechanism 4 are sequentially disposed along a height direction of the box 1 from top to bottom, the gas box mechanism 2 includes a gas box body 21 having a hollow structure, the hollow structure forms a gas cavity 22, an air inlet 23 communicating with the gas cavity 22 and penetrating through a top of the box 1 is disposed at a center of a top surface of the gas box body 21, the gas box body 21 is rectangular, and parallel partitions 24 are disposed at equal intervals on a bottom surface of the gas box body 21, the bottom surface of the air box body 21 between two adjacent partition boards 24 is provided with strip-shaped air outlets 25 communicated with the air cavity 22 in a penetrating way, the air outlets 25 are arranged in parallel at equal intervals, an ionization cavity 26 is formed between two adjacent partition boards 24 and is communicated with the air cavity 22 through the air outlets 25, the electrode mechanism 3 comprises a bearing body 31, the bearing body 31 is connected with the box body 1, electrode strips 32 corresponding to the ionization cavity 26 extend out of the bearing body 31 at parallel and equal intervals, the electrode strips 32 are correspondingly suspended in the ionization cavity 26, the carrier 5 is positioned below the ionization cavity 26, the carrier 5 is provided with a clamping groove 51 used for clamping one side of the workpiece 200, so that one side of the workpiece 200 can not shield the workpiece 200 and influence the overall deposition effect of the workpiece 200, the carrier 5 can also be provided with a clamping claw-shaped structure so as to avoid shielding the workpiece 200, the carrier 5 is arranged at the output end of the rotary driving mechanism 4, the carrier 5 is driven by the rotary driving mechanism 4 to rotate so as to drive the workpiece 200 to turn over, a deposition chamber 6 is formed between the carrier 5 and the ionization chamber 26, and the box body 1 is provided with an air suction port 11 connected with the deposition chamber 6, so that deposited gas is driven to deposit on the workpiece 200 of the carrier 5. In other words, during operation, the partition plates 24 and the electrode strips 32 are respectively connected to different electrodes, so that an electric field is formed between the partition plates 24 and the electrode strips 32, since the ionization chamber 26 is communicated with the air chamber 22 through the strip-shaped air outlets 25, and the partition plates 24 and the air outlets 25 forming the ionization chamber 26 are distributed at equal intervals, the gas entering the ionization chamber 26 from the air chamber 22 is uniformly dispersed in the ionization chamber 26 along with the air suction of the air suction port 11, and the gas uniformly dispersed in the ionization chamber 26 is equivalently ionized in the three-dimensional electric field formed by the partition plates 24 and the electrode strips 32, and since the gas is uniformly ionized and passes through the deposition chamber 6, a uniform deposition layer is formed on the workpiece 200 on the carrier 5, thereby effectively improving the uniformity of the deposition layer; in addition, the carrier 5 can turn over to drive the workpiece 200 to turn over, so that deposition on two sides of the workpiece 200 can be automatically completed, and the deposition device is excellent in deposition effect, high in efficiency and strong in applicability. It should be understood that fig. 1 is a schematic structural view in a top view, the carrier 5 is located at the bottom, and the workpiece 200 is vertically inserted into the slot 51 of the carrier 5. More specifically, the following:

as shown in fig. 1 to 5, the rotation driving mechanism 4 includes a connecting plate 41 and a rotating device 42, the connecting plate 41 is hollow, so that the gas can pass through, the connecting plate 41 is installed below the ionization chamber 26, the rotating device 42 is installed on the connecting plate 41, the carrier 5 is installed at the output end of the rotating device 42, the carrier 5 is driven by the rotating device 42 to rotate (the rotation direction is the direction indicated by arrow B in fig. 1), the pumping port 11 is located below the connecting plate 41, a gap is formed between the connecting plate 41 and the bottom end surface of the box 1, and the pumping port 11 is located below the connecting plate 41, so that the gas can be pumped out from the pumping port 11 only when being deposited on the workpiece 200, and a guiding effect is formed on the flow of the gas. The carrier 5 and the rotating device 42 are close to the side wall of the box 1 so as to avoid interference.

As shown in fig. 1, in order to make the gas entering the ionization chamber 26 from the gas outlet 25 be ionized uniformly and effectively by the electric field, the electrode strip 32 suspended in the ionization chamber 26 in the vertical plasma enhanced chemical vapor deposition structure 100 of the present invention is located right below the gas outlet 25; the electrode strips 32 are arranged right below the gas outlet 25, so that the gas entering the ionization chamber 26 from the gas outlet 25 can be maximally positioned in the electric field generated by the electrode strips 32 and the partition plates 24, the gas ionization is more sufficient, and the uniformity of a deposition layer formed on the substrate is further ensured.

As shown in fig. 1-5, the gas box mechanism 2 of the vertical plasma enhanced chemical vapor deposition structure 100 of the present invention further includes a mounting plate 27, the mounting plate 27 is relatively fixed on two opposite sides of the gas box body 21, and the two partition plates 24 located at the outermost side and the two mounting plates 27 form a rectangular structure, and the electrode strips 32 are detachably inserted on the mounting plate 27; the electrode strips 32 are supported by the mounting plate 27, so that the electrode strips 32 are suspended in the ionization chamber 26, and the structure is simple and practical; specifically, the mounting plate 27 is correspondingly provided with sockets 271 into which the electrode strips 32 are detachably inserted, and the electrode strips 32 are correspondingly inserted into the sockets 271 one by one, so that the electrode strips 32 are suspended in the ionization chamber 26.

As shown in fig. 1, the air inlet 23 of the vertical pecvd structure 100 of the present invention is further connected to an air inlet pipe (not shown), and the air inlet pipe can be conveniently and rapidly communicated with an air supply device for providing gas to be ionized with the outside. The pumping hole 11 of the vertical plasma enhanced chemical vapor deposition structure 100 of the present invention is further connected to a pumping tube (not shown), so that the pumping tube can facilitate and fast gas flow.

The operation of the vertical pecvd structure 100 of the present invention will be described in detail with reference to fig. 1 to 5, as follows:

the clamping groove 51 of the carrier 5 is clamped with the workpiece 200 to lock the workpiece 200, the partition plates 24 and the electrode strips 32 are respectively connected with different electrodes, so that an electric field is formed between the partition plates 24 and the electrode strips 32, as the ionization chamber 26 is communicated with the air chamber 22 through the strip-shaped air outlets 25, and the partition plates 24 and the air outlets 25 forming the ionization chamber 26 are distributed at equal intervals, along with the air suction of the air suction port 11, air enters from the air inlet 23, so that the air entering the ionization chamber 26 from the air chamber 22 is uniformly dispersed in the ionization chamber 26, the air uniformly dispersed in the ionization chamber 26 is equivalently ionized in the three-dimensional electric field formed by the partition plates 24 and the electrode strips 32, as the air is uniformly ionized, and passes through the deposition chamber 6, so that a uniform deposition layer is formed on the workpiece 200 on the carrier 5 (the deposition path is as indicated by an arrow a direction in fig. 1), and after the deposition on one side of the workpiece 200 is completed, the carrier 5 is installed at the output end of the rotation driving mechanism 4, and the carrier 5 is driven by the rotation driving mechanism 4 to rotate (the rotation direction is indicated by arrow B in fig. 1) to drive the workpiece 200 to turn over, so as to deposit on the other side of the workpiece 200, and the gas is exhausted from the pumping port 11.

By combining the box body 1, the air box mechanism 2, the electrode mechanism 3, the rotary driving mechanism 4 and the carrier 5 together, the air box mechanism 2 comprises an air box body 21 with a hollow structure, the hollow structure forms an air cavity 22, an air inlet 23 communicated with the air cavity 22 and penetrating the top of the box body 1 is arranged at the center of the top surface of the air box body 21, baffles 24 are arranged at the bottom surface of the air box body 21 in parallel and at equal intervals, strip-shaped air outlets 25 communicated with the air cavity 22 are arranged at the bottom surface of the air box body 21 between two adjacent baffles 24 in a penetrating way, the air outlets 25 are arranged at parallel and at equal intervals, an ionization cavity 26 is formed between two adjacent baffles 24 and communicated with the air cavity 22 by the air outlets 25, the electrode mechanism 3 comprises a bearing body 31, electrode strips 32 extending out of the bearing body 31 in parallel and at equal intervals and corresponding to the ionization cavity 26 are correspondingly suspended in the ionization cavity 26, the carrier 5 is located the below of ionization chamber 26, carrier 5 has the draw-in groove 51 that is used for the one side of chucking work piece 200, thereby the whole deposit effect of work piece 200 and influence work piece 200 also can not be sheltered from to the one side of chucking work piece 200, carrier 5 installs in the output of rotary driving mechanism 4, carrier 5 rotates under rotary driving mechanism 4's drive, in order to drive work piece 200 upset, form deposit chamber 6 between carrier 5 and the ionization chamber 26, the extraction opening 11 of being connected with deposit chamber 6 is seted up to box 1, thereby it deposits on the work piece 200 of carrier 5 to drive the gaseous deposit of deposit. In other words, during operation, the partition plates 24 and the electrode strips 32 are respectively connected to different electrodes, so that an electric field is formed between the partition plates 24 and the electrode strips 32, since the ionization chamber 26 is communicated with the air chamber 22 through the strip-shaped air outlets 25, and the partition plates 24 and the air outlets 25 forming the ionization chamber 26 are distributed at equal intervals, the gas entering the ionization chamber 26 from the air chamber 22 is uniformly dispersed in the ionization chamber 26 along with the air suction of the air suction port 11, and the gas uniformly dispersed in the ionization chamber 26 is equivalently ionized in the three-dimensional electric field formed by the partition plates 24 and the electrode strips 32, and since the gas is uniformly ionized and passes through the deposition chamber 6, a uniform deposition layer is formed on the workpiece 200 on the carrier 5, thereby effectively improving the uniformity of the deposition layer; in addition, the carrier 5 can turn over to drive the workpiece 200 to turn over, so that deposition on two sides of the workpiece 200 can be automatically completed, and the deposition device is excellent in deposition effect, high in efficiency and strong in applicability.

In addition, the principle of ionization of the gas under the action of the electric field is well known to those skilled in the art, and will not be described in detail herein.

The above disclosure is only for the purpose of illustrating the preferred embodiments of the present invention and is not to be construed as limiting the scope of the invention, therefore, the invention is not limited thereto.

Claims

1. A vertical plasma enhanced chemical vapor deposition structure is characterized by comprising a box body, a gas box mechanism, an electrode mechanism, a rotary driving mechanism and a carrier, wherein the gas box mechanism, the electrode mechanism, the rotary driving mechanism and the carrier are arranged in a cavity of the box body, the gas box mechanism comprises a gas box body with a hollow structure, the hollow structure forms a gas cavity, the center of the top surface of the gas box body is provided with a gas inlet which is communicated with the gas cavity and penetrates through the top of the box body, the bottom surfaces of the gas box body between two adjacent partition plates are provided with partition plates in parallel and equidistant mode, strip-shaped gas outlets which are communicated with the gas cavity penetrate through the bottom surface of the gas box body between the two adjacent partition plates, the gas outlets are arranged in parallel and equidistant mode, an ionization cavity is formed between the two adjacent partition plates, the electrode mechanism comprises a supporting body, electrode strips which are parallel and equidistant and extend out of the supporting body and correspond to the ionization cavity, the electrode strip is correspondingly suspended in the ionization chamber, the carrier is positioned below the ionization chamber, the carrier is provided with a clamping groove used for clamping one side of a workpiece, the carrier is installed at the output end of the rotary driving mechanism and driven by the rotary driving mechanism to rotate so as to drive the workpiece to turn over, a deposition chamber is formed between the carrier and the ionization chamber, and the box body is provided with an air suction port connected with the deposition chamber.

2. The vertical plasma enhanced chemical vapor deposition structure of claim 1, wherein the chamber is vacuum disposed.

3. The pecvd structure of claim 1, wherein the rotation driving mechanism comprises a connection plate and a rotation device, the connection plate is hollow, the connection plate is installed below the ionization chamber, the rotation device is installed on the connection plate, the carrier is installed at an output end of the rotation device, and the carrier is driven by the rotation device to rotate.

4. The vertical plasma enhanced chemical vapor deposition structure of claim 3, wherein the web is spaced from a bottom end surface of the tank.

5. The pecvd structure of claim 3, wherein the carrier and the rotating device are proximate to a sidewall of the chamber.

6. The vertical plasma enhanced chemical vapor deposition structure of claim 1, wherein the electrode bar suspended in the ionization chamber is located directly below the gas outlet.

7. A vertical pecvd structure according to claim 1, wherein the gas inlet is further connected to a gas inlet tube.

8. The vertical plasma enhanced chemical vapor deposition structure of claim 1, wherein the pumping port is further connected to a pumping tube.