CN214612750U

CN214612750U - Double-sided plasma enhanced chemical vapor deposition structure and deposition device

Info

Publication number: CN214612750U
Application number: CN202120453543.4U
Authority: CN
Inventors: 范继良
Original assignee: Individual
Current assignee: Individual
Priority date: 2021-03-02
Filing date: 2021-03-02
Publication date: 2021-11-05
Anticipated expiration: 2031-03-02

Abstract

The utility model discloses a two-sided plasma reinforcing chemical vapor deposition structure, it includes the box and locates the gas box mechanism in the cavity of box, electrode mechanism and carrier, gas box mechanism is used for leading-in gas, electrode mechanism is connected with gas box mechanism and is used for ionizing the gas in the gas box mechanism, the carrier is located the one side of the air inlet of keeping away from gas box mechanism of box, set up the cell body structure that the opening link up the setting up and around being along the fore-and-aft direction of box in the carrier, the cell body structure has first loading end and the second loading end that is used for bearing the work piece, the carrier can be swung and locate the box and drive the work piece and switch between first loading end and second loading end, the extraction opening of being connected with the output of deposit room is seted up to the box. So the utility model discloses a two-sided plasma reinforcing chemical vapor deposition structure has the advantage that the deposit effect is good and efficient. The utility model also provides a deposition device.

Description

Double-sided plasma enhanced chemical vapor deposition structure and deposition device

Technical Field

The utility model relates to a two-sided plasma reinforcing chemical vapor deposition structure especially relates to a can carry out the two-sided plasma reinforcing chemical vapor deposition structure of ionization to multiple different gases simultaneously.

Background

With the rapid development of economic construction, the microelectronic technology has been developed rapidly, and the development and use of Plasma Enhanced Chemical Vapor Deposition (hereinafter referred to as PECVD) equipment are becoming more and more widespread. PECVD equipment is equipment for chemical deposition that uses high frequency power glow discharge to generate plasma, thereby reducing the deposition temperature due to the presence of plasma. At present, PECVD equipment is widely used in the liquid crystal display industry, the solar cell industry, the manufacturing industry of semiconductor devices and large scale integrated circuits, and the like.

Plasma Enhanced Chemical Vapor Deposition (PECVD) is commonly used to deposit layers of materials on substrates, such as transparent substrates or semiconductor wafers for flat panel displays. PECVD is generally accomplished by introducing a precursor gas or gas mixture into a vacuum chamber containing the substrate, which is energized (e.g., excited) into a plasma by applying radio frequency to the precursor gas or gas mixture, which plasma can react with each other or with substrate surface species to deposit a layer of material.

At present, the existing ionization device can only ionize one gas at the same time, when a plurality of deposition layers are required to be deposited on a substrate in sequence, the substrate with one deposited layer needs to be moved to another ionization device to deposit another material, or the substrate is waited to be deposited with one layer completely and then another gas is used for depositing another material, no matter which deposition mode and means are adopted, the substrate is deposited with one layer completely and then another layer is deposited, when the requirement of depositing the plurality of deposition layers on the substrate is required, repeated operation needs to be carried out repeatedly, the deposition efficiency is low, and the operation is complicated.

Therefore, a need exists for a dual-sided pecvd structure that can simultaneously perform multiple layer depositions.

SUMMERY OF THE UTILITY MODEL

An object of the utility model is to provide a two-sided plasma reinforcing chemical vapor deposition structure that can two-sided deposition processing, it has advantages such as the deposit effect is good, efficient and suitability is strong.

Another object of the present invention is to provide a deposition apparatus, which has the advantages of excellent deposition effect, high efficiency, and strong applicability.

In order to achieve the above object, the double-sided plasma enhanced chemical vapor deposition structure of the present invention comprises a box body, and a gas box mechanism, an electrode mechanism and a carrier arranged in a cavity of the box body, wherein the gas box mechanism is used for introducing gas, the electrode mechanism is connected with the gas box mechanism and is used for ionizing the gas in the gas box mechanism, the carrier is located at one side of the box body away from an air inlet of the gas box mechanism, a groove body structure with an upward opening and a front-back through arrangement along the front-back direction of the box body is arranged in the carrier to form a deposition chamber, the groove body structure is provided with a first carrying surface and a second carrying surface for carrying a workpiece, the carrier is arranged in the box body in a swinging manner and drives the workpiece to switch between the first carrying surface and the second carrying surface, the box body is provided with an air exhaust port connected with an output end of the deposition chamber, the ionized gas in the gas box mechanism is deposited on the workpiece at the carrier by the air exhaust of the air exhaust port.

Preferably, the gas box mechanism comprises a gas box body with a hollow structure, the hollow structure forms a gas cavity, the gas inlet is arranged at the center of the front side of the gas box body, the gas inlet is communicated with the gas cavity and penetrates through the front side of the box body, parallel and equidistant partition plates are arranged on one side of the gas box body, strip-shaped gas outlets communicated with the gas cavity are arranged on one side of the gas box body between every two adjacent partition plates in a penetrating manner, the gas outlets are arranged in a parallel and equidistant manner, an ionization cavity is formed between every two adjacent partition plates, the electrode mechanism comprises a supporting body, parallel and equidistant electrode strips extending out of the supporting body and corresponding to the ionization cavity, and the electrode strips are correspondingly suspended in the ionization cavity.

Preferably, the first bearing surface and the second bearing surface of the carrier form a V-shaped groove structure together.

Preferably, the first bearing surface and the second bearing surface are provided in plurality, and the first bearing surface and the second bearing surface are alternately arranged to bear a plurality of workpieces.

Preferably, the utility model discloses a two-sided plasma reinforcing chemical vapor deposition structure still includes swing actuating mechanism, swing actuating mechanism install in the bottom of carrier, the carrier swings under swing actuating mechanism's drive.

Specifically, the swing driving mechanism comprises a pivot central shaft, a left lifting device and a right lifting device, the pivot central shaft is located in the middle of the carrier, the left lifting device is located on the left side of the carrier, and the right lifting device is located on the right side of the carrier.

Preferably, an electric field for neutralizing static electricity is provided at the carrier.

Specifically, electric fields with opposite electrodes are additionally arranged on two sides of the carrier.

Specifically, the electrode strip suspended in the ionization chamber is located directly below the air outlet.

In order to achieve the above object, the utility model discloses a deposition device, a serial communication port, including gas collection room and foretell two-sided plasma reinforcing chemical vapor deposition structure, two-sided plasma reinforcing chemical vapor deposition structure is the symmetry setting, all the extraction opening of two-sided plasma reinforcing chemical vapor deposition structure all with gas collection room intercommunication.

Compared with the prior art, the double-sided plasma enhanced chemical vapor deposition structure of the utility model combines the box body, the gas box mechanism, the electrode mechanism and the carrier together, the gas box mechanism is used for leading in gas, the electrode mechanism is connected with the gas box mechanism and is used for ionizing the gas in the gas box mechanism, the cooperation between the electrode mechanism and the gas box mechanism ensures that the entering gas is ionized, the carrier is positioned at one side of the box body away from the gas inlet of the gas box mechanism, the carrier is internally provided with the groove body structure which has an upward opening and is arranged in a front-back through way along the front-back direction of the box body to form a deposition chamber, the ionized gas flows into the deposition chamber and is deposited on a workpiece at the carrier after flowing out from the gas box mechanism, thereby completing deposition processing, the groove body structure is provided with a first bearing surface and a second bearing surface for bearing the workpiece, the carrier can be arranged at the box body in a swinging way and drives the workpiece to be switched between the first bearing surface and the second bearing surface, because the carrier can swing, utilize the effect of gravity, after one of them side of work piece is accomplished in the deposit, utilize the swing of carrier to switch over the work piece to another side and carry out the deposit, thereby accomplish two-sided deposit processing, the extraction opening of being connected with the output of deposit room is seted up to the box, borrow by extracting air of extraction opening and make gas flow along appointed direction and make the interior gas deposition of ionization in the gas box mechanism in the work piece of carrier department, just so can accomplish the two-sided deposit of work piece automatically, have the advantage that the deposition effect is good, high efficiency and suitability are strong.

Drawings

Fig. 1 is a schematic structural view of a double-sided pecvd structure according to the present invention in a top view direction.

FIG. 2 is a partial perspective view of the double-sided PECVD structure of FIG. 1.

Fig. 3 is a schematic perspective view of the gas box mechanism and the electrode mechanism in the double-sided plasma enhanced chemical vapor deposition structure according to the present invention.

FIG. 4 is a schematic view of another angle of the double-sided PECVD structure of FIG. 3.

FIG. 5 is a schematic perspective view of the double-sided PECVD structure of FIG. 3 with the cell mechanism and the electrode mechanism separated

Detailed Description

In order to explain technical contents and structural features of the present invention in detail, the following description is made with reference to the embodiments and the accompanying drawings.

Referring to fig. 1 to 5, the deposition apparatus of the present invention includes a gas collecting chamber (not shown) and a double-sided plasma enhanced chemical vapor deposition structure 100, the double-sided plasma enhanced chemical vapor deposition structure 100 is symmetrically disposed, all the pumping holes 11 of the double-sided plasma enhanced chemical vapor deposition structure 100 are communicated with the gas collecting chamber, so that the gas exhausted by the double-sided plasma enhanced chemical vapor deposition structure 100 can be correspondingly collected by one gas collecting chamber, and the recycling is more convenient while saving space, wherein the double-sided plasma enhanced chemical vapor deposition structure 100 includes a box body 1, a gas box mechanism 2 disposed in a cavity of the box body 1, an electrode mechanism 3 and a carrier 5, the gas box mechanism 2 is used for introducing gas, the electrode mechanism 3 is connected with the gas box mechanism 2 and is used for ionizing the gas in the gas box mechanism 2, the electrode mechanism 3 and the gas box mechanism 2 are matched to ionize the gas entering, the carrier 5 is positioned at one side of the box body 1 far away from the gas inlet 23 of the gas box mechanism 2, a groove body structure 51 with an upward opening and penetrating through the box body 1 in the front-back direction is arranged in the carrier 5 to form a deposition chamber 6, the workpiece 200 is arranged on the carrier 5 in a leaning manner, when the ionized gas flows out of the gas box mechanism 2, the ionized gas flows into the deposition chamber 6 and is deposited on the workpiece 200 at the position of the carrier 5, so that deposition processing is completed, the groove body structure 51 is provided with a first bearing surface 511 and a second bearing surface 512 for bearing the workpiece 200, the carrier 5 is arranged on the box body 1 in a swinging manner and drives the workpiece 200 to be switched between the first bearing surface 511 and the second bearing surface 512, because the carrier 5 can swing, one side surface of the workpiece 200 is in an exposed state under the action of gravity, and the other side surface of the workpiece 200 is attached to the carrier 5 and is in a covering state, after one side of the workpiece 200 is deposited, the workpiece 200 is switched to the other side for deposition by using the swing of the carrier 5, so as to complete the double-sided deposition processing, the box body 1 is provided with an air pumping port 11 connected with the output end of the deposition chamber 6, air is pumped by the air pumping port 11 to flow along a specified direction (the flowing direction is the direction indicated by the arrow a in fig. 1 and fig. 2), and ionized air in the air box mechanism 2 is deposited on the workpiece 200 at the carrier 5, so that the double-sided deposition of the workpiece 200 can be automatically completed, and the double-sided deposition device has the advantages of excellent deposition effect, high efficiency and strong applicability. More specifically, the following:

referring to fig. 1 to 5, the hollow structure forms an air chamber 22, the center of the front side of the air box body 21 is provided with an air inlet 23 communicating with the air chamber 22 and penetrating the front side of the box body 1, one side of the air box body 21 is provided with parallel partitions 24 at equal intervals, the bottom surface of the air box body 21 between two adjacent partitions 24 is provided with strip-shaped air outlets 25 communicating with the air chamber 22, the air outlets 25 are arranged at parallel equal intervals, an ionization chamber 26 is formed between two adjacent partitions 24 and is communicated with the air chamber 22 by the air outlets 25, the electrode mechanism 3 comprises a carrier 31, electrode strips 32 extending parallel and at equal intervals on the carrier 31 and corresponding to the ionization chamber 26 are extended, the electrode strips 32 are correspondingly suspended in the ionization chamber 26, in other words, when in operation, the partitions 24 and the electrode strips 32 are respectively connected with different electrodes, so as to form an electric field between the partitions 24 and the electrode strips 32, because the ionization chamber 26 is communicated with the air chamber 22 by the strip-shaped air outlet 25, the partition plates 24 and the air outlets 25 forming the ionization chamber 26 are distributed at equal intervals, the air entering the ionization chamber 26 from the air chamber 22 is uniformly dispersed in the ionization chamber 26 along with the air suction of the air suction port 11, the air uniformly dispersed in the ionization chamber 26 is equivalently ionized in the three-dimensional electric field formed by the partition plates 24 and the electrode strips 32, and the air is uniformly ionized and passes through the deposition chamber 6 to form a uniform deposition layer on the workpiece 200 on the carrier 5, so that the uniformity of the deposition layer is effectively improved;

referring to fig. 1 to 2, the first bearing surface 511 and the second bearing surface 512 of the carrier 5 form a V-shaped groove structure. The first bearing surface 511 and the second bearing surface 512 are provided with a plurality of first bearing surfaces 511 and a plurality of second bearing surfaces 512, the first bearing surfaces 511 and the second bearing surfaces 512 are arranged alternately to bear a plurality of workpieces 200, when the workpieces 200 are attached to the first bearing surface 511, one surface of the workpieces 200 facing the second bearing surface 512 is subjected to deposition processing, when the workpieces 200 are attached to the second bearing surface 512, one surface of the workpieces 200 facing the first bearing surface 511 is subjected to deposition processing, so that two side surfaces of the workpieces 200 are processed, and the workpieces 200 can be switched in a pivoting manner by the V-shaped groove structure, so that switching can be realized by small force, convenience in switching is improved, and switching in place is ensured.

Referring to fig. 1 to 5, the double-sided plasma enhanced chemical vapor deposition structure 100 of the present invention further includes a swing driving mechanism 4, the swing driving mechanism 4 is installed at the bottom of the carrier 5, the carrier 5 swings under the driving of the swing driving mechanism 4, and the swing of the carrier 5 can drive the workpiece 200 to turn over. Specifically, the swing driving mechanism 4 includes a pivot center shaft 41, a left lifting device 42 and a right lifting device 43, the pivot center shaft 41 is located in the middle of the carrier 5, the left lifting device 42 is located on the left side of the carrier 5, the right lifting device 43 is located on the right side of the carrier 5, the pivot center shaft 41 forms a pivot axis, the left side of the carrier 5 is driven by the left lifting device 42 to lift, the right side of the carrier 5 is driven by the right lifting device 43 to lift, the left side of the carrier 5 is lifted, the right side of the carrier 5 is correspondingly lowered, the left side of the carrier 5 is lowered, and the right side of the carrier 5 is correspondingly raised, so that the workpiece 200 swings to switch the deposition surface.

Referring to fig. 1 to 5, since the gas of the gas box mechanism 2 has electrons, the attaching surface of the workpiece 200 and the contact surface of the carrier 5 have electrons, and when the contact surfaces of the workpiece 200 and the carrier 5 have electric charges with the same electric property, the same-polarity repulsive force will make the workpiece 200 unable to be turned over to the target position for deposition, thereby affecting the normal turning of the workpiece 200, so the carrier 5 of the double-sided plasma-enhanced chemical vapor deposition structure 100 of the present invention is provided with an electric field (not shown) for neutralizing static electricity, so as to neutralize the static electricity, so that the workpiece 200 can be attached to the carrier 5 without being forced. Specifically, the carrier 5 is provided with electric fields having opposite electrodes on both sides in the left-right direction of the case 1.

In order to make the gas entering the ionization chamber 26 from the gas outlet 25 be ionized uniformly and effectively by the electric field, the electrode strip 32 suspended in the ionization chamber 26 in the double-sided plasma enhanced chemical vapor deposition structure 100 of the present invention is located right below the gas outlet 25; the electrode strips 32 are arranged right below the gas outlet 25, so that the gas entering the ionization chamber 26 from the gas outlet 25 can be maximally positioned in the electric field generated by the electrode strips 32 and the partition plates 24, the gas ionization is more sufficient, and the uniformity of a deposition layer formed on the substrate is further ensured.

As shown in fig. 1 and fig. 3 to fig. 5, the gas box mechanism 2 in the double-sided plasma enhanced chemical vapor deposition structure 100 of the present invention further includes a mounting plate 27, the mounting plate 27 is relatively fixed on two opposite sides of the gas box body 21, and the two partition plates 24 located at the outermost side and the two mounting plates 27 enclose a rectangular structure, and the electrode strips 32 are detachably inserted on the mounting plate 27; the electrode strips 32 are supported by the mounting plate 27, so that the electrode strips 32 are suspended in the ionization chamber 26, and the structure is simple and practical; specifically, the mounting plate 27 is correspondingly provided with sockets 271 into which the electrode strips 32 are detachably inserted, and the electrode strips 32 are correspondingly inserted into the sockets 271 one by one, so that the electrode strips 32 are suspended in the ionization chamber 26.

As shown in fig. 1 and fig. 3 to fig. 5, the air inlet 23 of the double-sided plasma-enhanced chemical vapor deposition structure 100 of the present invention is further connected to an air inlet pipe (not shown), so that the air inlet pipe can be conveniently and rapidly communicated with an air supply device for providing gas to be ionized with the outside. The air inlet 23 of the double-sided plasma enhanced chemical vapor deposition structure 100 of the present invention is further connected to an exhaust tube (not shown), so that the gas can flow conveniently and rapidly by means of the exhaust tube.

As shown in fig. 1 to 5, the operation of the double-sided plasma enhanced chemical vapor deposition structure 100 of the present invention is described in detail as follows:

the workpiece 200 is obliquely placed on the carrier 5, the separator 24 and the electrode strips 32 are respectively connected with different electrodes, so that an electric field is formed between the separator 24 and the electrode strips 32, because the ionization chamber 26 is communicated with the air chamber 22 through the strip-shaped air outlet 25, the partition plates 24 and the air outlet 25 forming the ionization chamber 26 are distributed at equal intervals, therefore, along with the air suction of the air suction opening 11, the air enters from the air inlet 23, so that the air entering the ionization cavity 26 from the air cavity 22 is uniformly dispersed in the ionization cavity 26, the gas uniformly dispersed in the ionization chamber 26 is equivalently ionized in the three-dimensional electric field formed by the partition plates 24 and the electrode strips 32, since the gas is uniformly ionized and passes through the deposition chamber 6 so that the workpiece 200 forms a uniform deposition layer on the carrier 5, the gas is exhausted through the pumping port 11 (the gas path is indicated by an arrow a in fig. 1 and 2). When it is necessary to turn over the deposition surface, the carrier 5 is swung by the swing drive mechanism 4 (in a swing direction indicated by an arrow B in fig. 2), so that the workpiece 200 is swung by gravity to switch the deposition surface.

The box body 1, the gas box mechanism 2, the electrode mechanism 3, the carrier 5 and the like are combined together, the gas box mechanism 2 is used for introducing gas, the electrode mechanism 3 is connected with the gas box mechanism 2 and is used for ionizing the gas in the gas box mechanism 2, the electrode mechanism 3 is matched with the gas box mechanism 2 to ionize the entered gas, the carrier 5 is positioned at one side of the box body 1 far away from the gas inlet 23 of the gas box mechanism 2, a groove body structure 51 with an upward opening and penetrating through the box body 1 in the front-back direction is arranged in the carrier 5 to form a deposition chamber 6, the ionized gas flows into the deposition chamber 6 and is deposited on a workpiece 200 at the carrier 5 after flowing out of the gas box mechanism 2, so as to finish deposition processing, the groove body structure 51 is provided with a first bearing surface 511 and a second bearing surface 512 for bearing the workpiece 200, the carrier 5 is arranged on the box body 1 in a swinging manner and drives the workpiece 200 to be switched between the first bearing surface 511 and the second bearing surface 512, because the carrier 5 can swing, utilize the effect of gravity, after one side of work piece 200 is finished in the deposit, utilize the swing of carrier 5 to switch over work piece 200 to another side and carry out the deposit, thereby accomplish two-sided deposit processing, box 1 is seted up the extraction opening 11 of being connected with the output of deposit room 6, borrow the work piece 200 of making gas flow along appointed direction and making the interior ionization gas of gas box mechanism 2 deposit in carrier 5 department by the extraction of extraction opening 11, just so can accomplish the deposit of work piece 200 two-sided automatically, have the deposit effect excellence, efficient and the suitability is strong advantage.

In addition, the principle of ionization of the gas under the action of the electric field is well known to those skilled in the art, and will not be described in detail herein.

The above disclosure is only for the purpose of illustrating the preferred embodiments of the present invention and is not to be construed as limiting the scope of the invention, therefore, the invention is not limited thereto.

Claims

1. A double-sided plasma enhanced chemical vapor deposition structure is characterized by comprising a box body, a gas box mechanism, an electrode mechanism and a carrier, wherein the gas box mechanism, the electrode mechanism and the carrier are arranged in a cavity of the box body, the gas box mechanism is used for introducing gas, the electrode mechanism is connected with the gas box mechanism and is used for ionizing gas in the gas box mechanism, the carrier is positioned on one side of the box body, which is far away from an air inlet of the gas box mechanism, a groove body structure is arranged in the carrier, the opening of the groove body structure faces upwards, the groove body structure is in front-back through arrangement along the front-back direction of the box body to form a deposition chamber, the groove body structure is provided with a first bearing surface and a second bearing surface, the carrier is arranged in the box body in a swinging mode and drives a workpiece to be switched between the first bearing surface and the second bearing surface, the box body is provided with an air exhaust port connected with an output end of the deposition chamber, the ionized gas in the gas box mechanism is deposited on the workpiece at the carrier by the air exhaust of the air exhaust port.

2. The double-sided plasma-enhanced chemical vapor deposition structure of claim 1, the air box mechanism comprises an air box body with a hollow structure, the hollow structure forms an air cavity, the air inlet is arranged at the center of the front side of the air box body, the air inlet is communicated with the air cavity and penetrates the front side of the box body, the parallel partition plates are arranged at equal intervals on one side of the air box body, a strip-shaped air outlet communicated with the air cavity is arranged on one side of the air box body between every two adjacent partition plates in a penetrating way, the air outlets are arranged in parallel at equal intervals, an ionization cavity is formed between two adjacent baffles, the electrode mechanism comprises a supporting body, electrode strips which are parallel to each other and extend out of the supporting body at equal intervals and correspond to the ionization chamber, and the electrode strips are correspondingly suspended in the ionization chamber.

3. The dual-sided pecvd structure of claim 1, wherein the first bearing surface and the second bearing surface of the carrier together form a "V" groove structure.

4. The double-sided pecvd structure of claim 1, wherein a plurality of the first bearing surfaces and the second bearing surfaces are disposed, and the first bearing surfaces and the second bearing surfaces are alternately disposed to bear a plurality of workpieces.

5. The twin-sided pecvd structure of claim 1, further comprising an oscillating drive mechanism mounted to a bottom of the carrier, the carrier oscillating under the drive of the oscillating drive mechanism.

6. The twin-sided pecvd structure of claim 5, wherein the swing drive mechanism comprises a pivot center shaft located in the middle of the carrier, a left lift device located on the left side of the carrier, and a right lift device located on the right side of the carrier.

7. The double-sided pecvd structure of claim 1, wherein an electric field for neutralizing static electricity is provided at the carrier.

8. The double-sided pecvd structure of claim 7, wherein opposite electric fields are applied to both sides of the carrier.

9. The double-sided pecvd structure of claim 2, wherein the electrode strips suspended in the ionization chamber are located directly below the gas outlet.

10. A deposition apparatus comprising a gas collection chamber and at least two double-sided pecvd structures according to any of claims 1 to 9, wherein the double-sided pecvd structures are symmetrically arranged, and the pumping ports of all the double-sided pecvd structures are communicated with the gas collection chamber.