CN214505742U - Photonic crystal double-band-pass filter - Google Patents
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Abstract
The utility model provides a photonic crystal double-bandpass filter, which comprises a first metal plate, a second metal plate, metal columns and defect metal columns, wherein the first metal plate and the second metal plate are correspondingly arranged, the metal columns are periodically arranged between the first metal plate and the second metal plate in a two-dimensional manner, and the two opposite ends of the metal columns are respectively contacted with the first metal plate and the second metal plate to form a metal column array; the height of the defect metal column is smaller than that of the surrounding metal columns, the defect metal column comprises a first defect metal column and a second defect metal column with different cross-sectional areas so as to form a defect sub-periodic structure, and the defect sub-periodic structure is two-dimensionally and periodically arranged in the metal column array. The utility model provides a two band-pass filter of photonic crystal can be used to future 6G communication and optical communication's two band-pass filter, has filled the blank in this field.
Description
Technical Field
The utility model belongs to the integrated optics field relates to a two band-pass filter of photonic crystal.
Background
In 1969, doctor Miller, bell laboratories, proposed the concept of integrated optics. Integrated optics has been primarily aimed at integrating bulky free-space optical systems onto the same substrate. The size of the integrated optical device changes with different frequency bands, for example, the millimeter wave frequency band is generally in millimeter level, and the terahertz (THz) frequency band is mainly in micrometer level. The integrated optical device has the advantages of low power consumption and small volume, and is in a relatively closed environment after being integrated, so that the interference of external electromagnetic radiation is small. Under the background that the integrated circuit is constrained by moore's law and the prospect is limited, the photoelectronic technology shows great advantages: the speed of photons in an integrated optical circuit is much greater than the speed of electrons in an integrated circuit, and has greater information capacity.
In recent decades, with the rapid development of integrated optical circuit technology, photonic crystals called "optical semiconductors" have attracted considerable attention. Photonic crystals are periodic structural materials that exhibit a periodic distribution of dielectric constants. Similar to the valence band, conduction band and passband of a semiconductor, photonic crystals also have photonic energy bands, and when the periodic dielectric constant of the photonic crystals meets a certain condition, the photonic energy bands can inhibit light transmission of certain frequencies, and are called photonic forbidden bands. At present, photonic crystals are used for designing and developing filters.
In nature, surface plasmons are collective oscillation modes of free electrons-photons formed by interaction of electromagnetic waves and free electrons on the surface of a metal. The surface plasmons can exist only at material interfaces with opposite real part of dielectric constant signs, such as interfaces between metal and air, and can be divided into two types, one is surface plasmon polaritons transmitted on the metal and dielectric medium interfaces, and the other is local surface plasmons limited on the surfaces of metal nanoparticles. In 2004, j.b. pendry et al, in order to realize Surface Plasmon polaritons in the microwave millimeter wave band, etching periodically arranged air holes in a metal cube realizes Surface Plasmon Polariton (SPP) transmission in the microwave millimeter wave band, and such a structure is called as an artificial Surface Plasmon Polariton (SSPP).
With the development of modern wireless communication technology, the bandwidth and communication rate of a communication system are increasing continuously, and the communication frequency band of the communication system is inevitably increased to a terahertz frequency band. In 5G and future 6G communication systems, dual-band portable phones and wireless local area networks are widely used, and dual-band filters will become important components of the front-end of future communication systems. The development of all-solid-state, miniaturized and low-power-consumption dual-bandpass filters becomes an important research subject in the future communication technical field, but the current research work on photonic crystal dual-bandpass and multi-bandpass filters is not much, and the physical mechanism and the research and development technology thereof need to be solved urgently.
Therefore, it is necessary to provide a photonic crystal dual band-pass filter.
SUMMERY OF THE UTILITY MODEL
In view of the above-mentioned shortcomings of the prior art, it is an object of the present invention to provide a photonic crystal dual band pass filter for expanding the applications of photonic crystals.
In order to achieve the above objects and other related objects, the present invention provides a photonic crystal dual band pass filter, which includes:
the first metal plate and the second metal plate are arranged correspondingly;
the metal posts are periodically arranged between the first metal plate and the second metal plate in a two-dimensional manner, and two opposite ends of the metal posts are respectively contacted with the first metal plate and the second metal plate to form a metal post array;
the defect metal posts are smaller than the surrounding metal posts in height, each defect metal post comprises a first defect metal post and a second defect metal post with different cross sections to form a defect sub-periodic structure, and the defect sub-periodic structures are periodically arranged in the metal post array in a two-dimensional mode.
Optionally, the metal posts are arranged at equal intervals.
Optionally, the metal pillars have the same cross-sectional area, and the cross-sectional morphology of the metal pillars includes circular, square, or elliptical.
Optionally, the first defective metal pillars are arranged at equal intervals; the second defective metal columns are arranged at equal intervals.
Optionally, the cross-sectional profile of the first defective metal pillar comprises a circle, a square, or an ellipse; the cross-sectional morphology of the second defective metal pillar includes circular, square, or elliptical.
Optionally, the metal pillar, the first defective metal pillar, and the second defective metal pillar have the same cross-sectional morphology.
Optionally, the first defective metal pillar and the second defective metal pillar have the same height.
Optionally, the shape of the structure surrounded by the defect sub-periodic structure includes one of a straight line type, a bent type and a T shape.
Optionally, the first metal plate, the second metal plate, the metal pillar, and the defect metal pillar are made of the same material, wherein the material includes one of gold metal, silver metal, copper metal, and aluminum metal.
Optionally, the diameter of the metal pillar is d, the height of the metal pillar is h, and the distance between the metal pillars is a; the diameter of the first defective metal pillar is daHeight of ha(ii) a The second defective metal pillar has a diameter dbHeight of haAnd the dimensional relation is d is 0.5a, da＝0.3a，db＝0.6a，ha＝0.83h，h＝a。
As described above, the photonic crystal dual bandpass filter of the present invention includes the first metal plate, the second metal plate, the metal posts and the defective metal posts, wherein the first metal plate and the second metal plate are disposed correspondingly, the metal posts are two-dimensionally and periodically arranged between the first metal plate and the second metal plate, and two opposite ends of the metal posts are in contact with the first metal plate and the second metal plate respectively to form a metal post array; the height of the defect metal column is smaller than that of the surrounding metal columns, the defect metal column comprises a first defect metal column and a second defect metal column with different cross-sectional areas so as to form a defect sub-periodic structure, and the defect sub-periodic structure is two-dimensionally and periodically arranged in the metal column array. The utility model forms a surface wave photonic crystal structure through the first metal plate, the metal column and the defective metal column, and by bonding the second metal plate on the basis of the surface wave photonic crystal structure, so that a two-dimensional closed surface wave photonic crystal structure including the surface wave photonic crystal structure and the metal-insulator-metal structure can be integrated, so as to provide a two-dimensional closed surface wave photonic crystal structure with stronger anti-interference performance and higher integration level, and in the two-dimensional closed surface wave photonic crystal structure, through a defect sub-periodic structure formed by a first defect metal column and a second defect metal column with different cross-sectional areas, a design and development scheme of a novel dual-passband narrow-band-pass filter is provided, the dual band-pass filter can be used for future 6G communication and optical communication, and fills the blank of the field.
Drawings
Fig. 1 is a schematic perspective view of a surface wave photonic crystal structure according to a comparative example of the present invention.
Fig. 2 is a schematic view showing a cross-sectional structure taken along line C-C' in fig. 1.
Fig. 3 is a schematic representation of the waveguide transmission coefficient for the surface wave photonic crystal structure of fig. 1.
FIG. 4 is a schematic representation of the passband versus field distribution of the surface wave photonic crystal structure of FIG. 1.
Fig. 5 is a schematic diagram showing the electric field local distribution corresponding to the transmission peak of the forbidden band of the surface wave photonic crystal structure in fig. 1.
Fig. 6 is a schematic perspective view of a photonic crystal dual bandpass filter according to an embodiment of the present invention.
Fig. 7 shows the exploded structure of fig. 6.
Fig. 8 is a schematic view showing the distribution structure of the metal pillars and the defective metal pillars in fig. 6.
Fig. 9 is a schematic view of the cross-sectional structure of fig. 6 taken along a-a' in fig. 7.
Fig. 10 is a schematic view of the cross-sectional structure of fig. 6 taken along B-B' in fig. 7.
Fig. 11 is a schematic diagram of waveguide modes of the photonic crystal dual band-pass filter of fig. 6 operating in the 0.1THz frequency band.
Fig. 12 is a diagram showing the transmission coefficient of the photonic crystal dual band-pass filter in fig. 6 operating in the 0.1THz frequency band.
Fig. 13 is a schematic diagram showing the local distribution of electric field of the photonic crystal dual band-pass filter in fig. 6 when operating in the 0.1THz frequency band.
Fig. 14 is a schematic diagram of waveguide modes of the photonic crystal dual band-pass filter of fig. 6 operating in the 4.3THz frequency band.
Fig. 15 is a diagram showing the transmission coefficient of the photonic crystal dual band-pass filter in fig. 6 operating in the 4.3THz frequency band.
Fig. 16 is a schematic diagram showing the local distribution of electric field of the photonic crystal dual band-pass filter in fig. 6 when operating in the 4.3THz frequency band.
Description of the element reference numerals
100. 10 first metal plate
200 second metal plate
300. 30 metal column
400. 40 defective metal pillar
410 first defective metal pillar
420 second defective metal pillar
Detailed Description
The following description of the embodiments of the present invention is provided for illustrative purposes, and other advantages and effects of the present invention will be readily apparent to those skilled in the art from the disclosure herein. The present invention can also be implemented or applied through other different specific embodiments, and various details in the present specification can be modified or changed based on different viewpoints and applications without departing from the spirit of the present invention.
As in the detailed description of the embodiments of the present invention, the cross-sectional views illustrating the device structure are not partially enlarged in general scale for convenience of illustration, and the schematic views are only examples, which should not limit the scope of the present invention. In addition, the three-dimensional dimensions of length, width and depth should be included in the actual fabrication.
For convenience in description, spatial relational terms such as "below," "beneath," "below," "under," "over," "upper," and the like may be used herein to describe one element or feature's relationship to another element or feature as illustrated in the figures. It will be understood that these terms of spatial relationship are intended to encompass other orientations of the device in use or operation in addition to the orientation depicted in the figures. Further, when a layer is referred to as being "between" two layers, it can be the only layer between the two layers, or one or more intervening layers may also be present. As used herein, "between … …" is meant to include both endpoints.
In the context of this application, a structure described as having a first feature "on" a second feature may include embodiments in which the first and second features are formed in direct contact, and may also include embodiments in which additional features are formed in between the first and second features, such that the first and second features may not be in direct contact.
It should be noted that the drawings provided in the present embodiment are only for illustrating the basic idea of the present invention, and only the components related to the present invention are shown in the drawings rather than being drawn according to the number, shape and size of the components in actual implementation, and the form, amount and ratio of the components in actual implementation may be changed at will, and the layout of the components may be more complicated.
As shown in fig. 6 to 10, the present embodiment provides a photonic crystal dual band-pass filter, which includes a first metal plate 100, a second metal plate 200, metal pillars 300 and defect metal pillars 400, wherein the first metal plate 100 and the second metal plate 200 are correspondingly disposed, and the metal pillars 300 are arranged in a two-dimensional periodic mannerArranged between the first metal plate 100 and the second metal plate 200, and opposite ends of the metal pillar 300 are respectively in contact with the first metal plate 100 and the second metal plate 200 to form a metal pillar array; height h of the defective metal pillar 400aThe defective metal pillar 400 includes a first defective metal pillar 410 and a second defective metal pillar 420 having different cross-sectional areas to form a defective sub-periodic structure N, which is periodically arranged in the metal pillar array in two dimensions, where M is a period of the photonic crystal dual band-pass filter, which is smaller than the height h of the surrounding metal pillar 300.
In this embodiment, the first metal plate 100, the metal pillar 300, and the defect metal pillar 400 may form a surface wave photonic crystal structure, and the two-dimensional closed surface wave photonic crystal structure including the surface wave photonic crystal structure and the metal-insulator-metal structure may be integrated by combining the second metal plate 200 on the basis of the surface wave photonic crystal structure, so as to provide the two-dimensional closed surface wave photonic crystal structure with strong anti-interference performance and high integration level, and in the two-dimensional closed surface wave photonic crystal structure, the defect sub-period structure N formed by the first defect metal pillar 410 and the second defect metal pillar 420 having different cross-sectional areas provides a design and development scheme of a novel dual-pass band narrow band pass filter, which may be used in a dual-pass filter for future 6G communication and optical communication, fills the blank of the field.
For example, the metal pillars 300 are arranged at equal intervals a, but not limited thereto, and the metal pillars 300 may also be arranged at unequal intervals as needed, which is not limited herein.
As an example, the metal pillars 300 have the same cross-sectional area, and the cross-sectional profile of the metal pillars 300 may include a circular shape, a square shape, or an oval shape.
Specifically, in the present embodiment, the metal pillars 300 have the same cross-sectional area and have a circular cross-sectional shape, that is, the metal pillars 300 have a cylindrical shape with the same radius d, but the shape of the metal pillars 300 is not limited thereto, and the metal pillars 300 may also have a square shape, an oval shape or any combination of a circular shape, a square shape and an oval shape as required, and the sizes of the metal pillars 300 are not limited to the same.
By way of example, the first defective metal pillars 410 are arranged at equal intervals (not shown), and the second defective metal pillars 420 are arranged at equal intervals, but the present invention is not limited thereto, and the intervals may be set at unequal intervals as needed, and are not limited herein.
As an example, the cross-sectional profile of the first defective metal pillar 410 includes a circle, a square, or an ellipse; the cross-sectional profile of the second defective metal pillar 420 includes a circular, square, or oval shape.
Specifically, in this embodiment, the first defective metal pillar 410 has the same cross-sectional area and a circular cross-sectional shape, that is, the first defective metal pillar 410 has the same radius daAs shown in fig. 9, the shape of the first defective metal pillar 410 is not limited thereto, and the first defective metal pillar 410 may also have a square shape, an oval shape, or any combination of a circular shape, a square shape, and an oval shape, as required. Similarly, the second defective metal pillar 420 has the same cross-sectional area and a circular cross-sectional shape, i.e., the second defective metal pillar 420 has the same radius dbAs shown in fig. 10, the second defective metal pillar 420 may have a square shape, an oval shape, or any combination of a circular shape, a square shape, and an oval shape, as needed, but the shape of the second defective metal pillar 420 is not limited thereto.
As an example, the metal pillar 300, the first defective metal pillar 410, and the second defective metal pillar 420 have the same cross-sectional profile.
Specifically, in this embodiment, the metal pillar 300, the first defective metal pillar 410 and the second defective metal pillar 420 preferably have the same cross-sectional profile, that is, the metal pillar 300, the first defective metal pillar 410 and the second defective metal pillar 420 are preferably cylindrical, but not limited thereto.
As an example, the first defective metal pillar 410 and the second defective metal pillar 420 have the same height haHowever, the present invention is not limited to this, and may be specifically set as needed.
As an example, the shape of the structure surrounded by the defect sub-period structures N includes one of a linear type, a curved type and a T-shape, and referring to fig. 8, this embodiment illustrates the defect sub-period structures N distributed in a linear type, but the distribution shape of the defect sub-period structures N is not limited thereto.
As an example, the first metal plate 100, the second metal plate 200, the metal pillar 300 and the defect metal pillar 400 are made of the same material, wherein the material may include one of gold metal, silver metal, copper metal and aluminum metal, and the specific material may be selected according to the requirement, which is not limited herein.
As an example, the metal pillars 300 have a diameter d, a height h, and a pitch a; the first defective metal pillar 410 has a diameter daHeight of ha(ii) a The second defective metal pillar 420 has a diameter dbHeight of haAnd the dimensional relation is d is 0.5a, da＝0.3a，db＝0.6a，ha＝0.83h，h＝a。
The design of the photonic crystal dual bandpass filter is described below with reference to experiments, wherein the selection of specific dimensions, morphology, materials, etc. of the photonic crystal dual bandpass filter is not limited herein, and changes in the operating frequency band, dispersion curve, and other results caused by changing any geometric parameters without changing the operating principle all belong to the patent scope.
Referring to fig. 1 to 5, comparative examples and experimental results thereof are provided, which specifically include:
as shown in fig. 1, a surface wave photonic crystal structure is provided which is comprised of two parts, a lower layer of a first metal 10 and an upper layer of a square array of metal posts 30 (using metal cylinders) and defect posts 40 (using metal cylinders). When operating at 0.1THz, the distance a 'between the metal posts 30 is equal to the height h' of the metal posts 30, i.e., h 'is 0.5mm, the radius r' of the metal posts 30 is 0.25mm 'is 0.125mm, i.e., d' is 0.5mm 'is 0.25mm, and the height h' of the metal posts 30 is 0.5mm0.5mm, the radius r 'of the defect column 40 is 0.25 a' to 0.125mm, i.e., d 'is 0.5 a' to 0.25mm, and the height h of the defect column 40 isa’＝0.83h’＝0.415mm。
After the defect column 40 is introduced, a photonic crystal waveguide can be constructed according to photonic forbidden bands and photonic local characteristics of the photonic crystal, the transmission coefficient of the waveguide is shown in fig. 3, the transmission coefficient comprises two parts of a passband frequency band and a forbidden band frequency band, the passband frequency band (100GHz for example) corresponds to the electric field distribution shown in fig. 4, and the forbidden band transmission peak (135GHz) corresponds to the electric field distribution shown in fig. 5.
Referring to fig. 6 to 16, embodiments and experimental results thereof are provided, which specifically include:
as shown in fig. 6 to 10, in this embodiment, a second metal plate 200 is added on the basis of the above comparative example to form a two-dimensional closed surface wave photonic crystal structure, and on the basis of the two-dimensional closed surface wave photonic crystal structure, a defect sub-period structure N including the first defect metal pillar 410 and the second defect metal pillar 420 is built inside, so as to provide a design and development scheme of a novel dual-passband narrow-band-pass filter, which can be used for a dual-bandpass filter for future 6G communication and optical communication, and fill up the blank in this field. The geometric structure of the photonic crystal double-bandpass filter is shown in fig. 6-10, and specifically comprises an upper layer structure, a middle layer structure and a lower layer structure, wherein the upper layer structure, the lower layer structure and the middle layer structure are metal plates, the middle layer structure is a metal column and a defect metal column which are arranged in a two-dimensional periodic manner, and the three layer structures are made of common metal for waveguides, such as silver metal. The top view of the intermediate layer periodic structure is shown in fig. 8, the dotted frame M is one period of the photonic crystal dual-bandpass filter, wherein the cross-sectional view of the a-a 'interface is shown in fig. 9, and the cross-sectional view of the BB' interface is shown in fig. 10. The diameter of the metal column 300 is d, the height is h, and the distance is a; the first defective metal pillar 410 has a diameter daHeight of ha(ii) a The second defective metal pillar 420 has a diameter dbHeight of haAnd the dimensional relation is d is 0.5a, da＝0.3a，db＝0.6a，ha＝0.83h，h＝a。
In the same surface wave photonic crystal structure, the working frequency can be skillfully moved to a low frequency direction by adding a metal plate on the top, and meanwhile, the forbidden band limit of the photonic crystal structure can be broken through, so that the integration level of the photonic crystal integrated optical circuit can be greatly increased. Meanwhile, due to the shielding effect of the upper metal plate and the lower metal plate, the structure can almost completely shield the transmission frequency of a first-order mode and a second-order mode in the self dispersion curve of the photonic crystal, so that only the frequency corresponding to a waveguide mode introduced by the defect is allowed to pass, and other frequency points except the waveguide frequency are shielded, so that the anti-interference performance of the photonic crystal is extremely high. In fact, because the microwave millimeter wave terahertz waveband metal is equivalent to a total reflection mirror, the metal plate at the top can serve as a mirror, so that the function that the current surface wave photonic crystal structure size can be realized only when being increased by 2 times is realized by using a mirror image method.
In order to further explain the innovation point of the present invention, the actual calculation is performed in the 0.1THz frequency band and the 4.3THz frequency band, wherein the corresponding dimension h of 0.1THz is 0.5mm, a is 0.5mm, the radius r of the cylinder is 0.125mm, and h is in the line defect waveguideaThe waveguide mode of the structure is shown in figure 11 when the structure works in a 100GHz frequency band, the transmission coefficient is shown in figure 12, two narrow pass bands exist, the narrow pass bands respectively work in two frequency bands of 86GHz-102GHz and 118.1GHz-128.8GHz, and the field distribution at 100GHz is shown in figure 13. When the corresponding size h is 11.64 mu m, a is 11.64 mu m, the cylinder radius r is 2.91 mu m in the 4.3THz frequency band, h in the linear defect waveguideaThe waveguide mode of the structure is shown in fig. 14 when the structure works in the 4.3THz frequency band, the transmission coefficient is shown in fig. 15, two narrow pass bands exist, the structure works in the two frequency bands of 3.67THz-4.37THz and 5.04THz-5.51THz respectively, and the field distribution at the 4.3THz is shown in fig. 16.
The utility model discloses on inheriting the restriction that two-dimensional closed surface wave photonic crystal structure broke through the photonic crystal passband, high integration degree, the extremely strong basis of interference immunity, constructed the dual passband filter, further promoted its range of application.
To sum up, the photonic crystal dual bandpass filter of the present invention includes a first metal plate, a second metal plate, metal pillars and defect metal pillars, wherein the first metal plate and the second metal plate are correspondingly disposed, the metal pillars are two-dimensionally and periodically arranged between the first metal plate and the second metal plate, and two opposite ends of the metal pillars are respectively in contact with the first metal plate and the second metal plate to form a metal pillar array; the height of the defect metal column is smaller than that of the surrounding metal columns, the defect metal column comprises a first defect metal column and a second defect metal column with different cross-sectional areas so as to form a defect sub-periodic structure, and the defect sub-periodic structure is two-dimensionally and periodically arranged in the metal column array. The utility model forms a surface wave photonic crystal structure through the first metal plate, the metal column and the defective metal column, and by bonding the second metal plate on the basis of the surface wave photonic crystal structure, so that a two-dimensional closed surface wave photonic crystal structure including the surface wave photonic crystal structure and the metal-insulator-metal structure can be integrated, so as to provide a two-dimensional closed surface wave photonic crystal structure with stronger anti-interference performance and higher integration level, and in the two-dimensional closed surface wave photonic crystal structure, through a defect sub-periodic structure formed by a first defect metal column and a second defect metal column with different cross-sectional areas, a design and development scheme of a novel dual-passband narrow-band-pass filter is provided, the dual band-pass filter can be used for future 6G communication and optical communication, and fills the blank of the field.
The above embodiments are merely illustrative of the principles and effects of the present invention, and are not to be construed as limiting the invention. Modifications and variations can be made to the above-described embodiments by those skilled in the art without departing from the spirit and scope of the present invention. Accordingly, it is intended that all equivalent modifications or changes which may be made by those skilled in the art without departing from the spirit and technical spirit of the present invention be covered by the claims of the present invention.
Claims (10)
1. A photonic crystal dual bandpass filter, comprising:
the first metal plate and the second metal plate are arranged correspondingly;
the metal posts are periodically arranged between the first metal plate and the second metal plate in a two-dimensional manner, and two opposite ends of the metal posts are respectively contacted with the first metal plate and the second metal plate to form a metal post array;
the defect metal posts are smaller than the surrounding metal posts in height, each defect metal post comprises a first defect metal post and a second defect metal post with different cross sections to form a defect sub-periodic structure, and the defect sub-periodic structures are periodically arranged in the metal post array in a two-dimensional mode.
2. The photonic crystal dual bandpass filter of claim 1, wherein: the metal columns are arranged at equal intervals.
3. The photonic crystal dual bandpass filter of claim 1, wherein: the metal columns have the same cross-sectional area, and the cross-sectional morphology of the metal columns comprises a circle, a square or an ellipse.
4. The photonic crystal dual bandpass filter of claim 1, wherein: the first defective metal columns are arranged at equal intervals; the second defective metal columns are arranged at equal intervals.
5. The photonic crystal dual bandpass filter of claim 1, wherein: the cross-sectional morphology of the first defective metal pillar comprises a circle, a square or an ellipse; the cross-sectional morphology of the second defective metal pillar includes circular, square, or elliptical.
6. The photonic crystal dual bandpass filter of claim 1, wherein: the metal column, the first defective metal column and the second defective metal column have the same cross-sectional morphology.
7. The photonic crystal dual bandpass filter of claim 1, wherein: the first defective metal pillar and the second defective metal pillar have the same height.
8. The photonic crystal dual bandpass filter of claim 1, wherein: the shape of the structure surrounded by the defect sub-periodic structure comprises one of a linear type, a bent type and a T shape.
9. The photonic crystal dual bandpass filter of claim 1, wherein: the first metal plate, the second metal plate, the metal column and the defect metal column are made of the same material, wherein the material comprises one of gold metal, silver metal, copper metal and aluminum metal.
10. The photonic crystal dual bandpass filter of claim 1, wherein: the diameter of the metal column is d, the height of the metal column is h, and the distance between the metal columns is a; the diameter of the first defective metal pillar is daHeight of ha(ii) a The second defective metal pillar has a diameter dbHeight of haAnd the dimensional relation is d is 0.5a, da＝0.3a，db＝0.6a，ha＝0.83h，h＝a。
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