CN108183338B - Crown-shaped adjustable plasma metamaterial broadband wave absorber - Google Patents
Crown-shaped adjustable plasma metamaterial broadband wave absorber Download PDFInfo
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q17/00—Devices for absorbing waves radiated from an antenna; Combinations of such devices with active antenna elements or systems
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- H01Q17/00—Devices for absorbing waves radiated from an antenna; Combinations of such devices with active antenna elements or systems
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Abstract
The invention discloses a crown-shaped adjustable plasma metamaterial broadband wave absorber which structurally comprises a bottom metal reflecting plate, a dielectric substrate and a solid plasma resonance unit, wherein the dielectric substrate and the solid plasma resonance unit are arranged above the bottom metal reflecting plate. The solid plasma resonance unit has two working states, namely an excited state and an unexcited state. The plasma metamaterial broadband wave absorber has a good absorption effect on TE polarized waves and TM polarized waves, and the excitation area of a resonance unit formed by solid plasmas is controlled in a programming mode, so that excitation of different resonance units can be achieved, the purpose of dynamically regulating and controlling different frequencies of the wave absorber is achieved, broadband absorption of the wave absorber is achieved, and the working frequency of the wave absorber can cover the whole X wave band under the condition that the excitation area is selected to be proper.
Description
Technical Field
The invention relates to a crown type adjustable plasma metamaterial broadband wave absorber, belonging to the field of radio communication and microwave devices.
Background
Plasmonic metamaterials are metamaterials that exploit surface plasmons generated due to light and metal-dielectric material interactions. Under special conditions, incident light and surface plasmons couple to generate self-sustaining and propagating electromagnetic waves called surface plasmon polaritons. Once formed, such waves propagate along the metal-dielectric interface. Compared with incident light, the wavelength of the plasma polarized wave is much shorter, and the plasma metamaterial is made of composite materials; are designed with metals and dielectrics to achieve properties not found in nature. This property comes from the unitary structure of the composite material, which is characterized by separation by sub-wavelength distances.
With the development of information technology, microwave devices have been widely used in various systems in communications. Such as an antenna at the transmitting end, an electromagnetic shielding box, etc. The electromagnetic interference prevention and electromagnetic stealth prevention device has wide application prospect in the military and civil fields. The electromagnetic wave absorber meets the requirement, and the microwave device is designed and is more and more widely applied to the communication field. In the military field, the electromagnetic stealth characteristic of weapon equipment is improved, the detection probability of enemies is reduced, and the premise of capturing the victory of modern war is provided. In the civil field, basic devices in wireless communication, medical, health care and common consumer grade electronic products all have electronic compatibility requirements on electronic devices, and additional shielding of 'unwanted' electromagnetic signals is required. Low profile and miniaturized microwave absorbers are also strongly demanded in the civilian field. In order to meet the above requirements, electromagnetic metamaterials are often applied to the design of wave absorbers. However, the metamaterial wave absorber in the traditional sense is difficult to obtain a tunable absorption spectrum, a large number of lumped elements have to be introduced to obtain the tunable absorption spectrum, a control circuit is complex, and integration and chip-based integrated manufacturing are not facilitated.
The solid plasma can solve the problem well, and is formed by electrically or optically exciting a semiconductor intrinsic layer, and when the carrier concentration in the formed solid plasma reaches a certain value, the conductivity of the formed solid plasma is comparable to that of metal. When the material is not excited into solid plasma, the semiconductor material shows the characteristics of a medium, and the electromagnetic stealth performance can be realized by the characteristic of low RCS when the material is not responded to electromagnetic waves, so that the material can be used for manufacturing a tunable/reconfigurable microwave device.
Disclosure of Invention
The technical problem to be solved by the invention is to provide a crown-shaped adjustable plasma metamaterial broadband wave absorber, wherein the excitation state of an excitation area of solid plasma is controlled by a programmable logic array, so that dynamic adjustment and control of different frequencies are realized, the broadband absorption effect is achieved, and in addition, the absorption coverage of the whole X wave band can be realized by dynamically changing the excitation area. The structure unit in the invention adopts a crown structure, has good absorption effect on TE polarized waves and TM polarized waves, adopts solid plasma to replace metal to work, controls the excitation state of the excitation area of the solid plasma through a programmable logic array, realizes dynamic regulation and control on different frequencies, achieves the effect of broadband absorption, and can realize the absorption coverage on the whole X wave band by dynamically changing the excitation area.
The invention adopts the following technical scheme for solving the technical problems:
the invention provides a crown-shaped adjustable plasma metamaterial broadband wave absorber which comprises a bottom reflecting plate, wherein a dielectric substrate is arranged on the bottom reflecting plate, and a plurality of solid plasma resonance units which are symmetrically arranged diagonally and periodically are arranged on the dielectric substrate;
the structure of each solid plasma resonance unit is the same, a cross-shaped solid plasma unit is arranged at the center, a cross-shaped gap is arranged at the center of the cross-shaped solid plasma unit, a semicircular annular solid plasma unit with an inward opening is arranged above the cross-shaped solid plasma unit, a nested structure formed by two square annular solid plasma units with inward openings is arranged below the cross-shaped solid plasma unit, and the left side and the right side of the cross-shaped solid plasma unit are respectively half of an inverted triangular annular solid plasma unit and connected with the semicircular annular solid plasma unit above the cross-shaped solid plasma unit;
each solid-state plasma unit is respectively connected with one plasma excitation source for excitation, and the on-off of each plasma excitation source is controlled by a programming control logic array.
As a further technical scheme of the invention, the two square ring-shaped solid-state plasma units with the inward openings are respectively connected with the bottom layer reflecting plate through the plasma columns. .
As a further technical scheme of the invention, the dielectric substrate is FR-4 with loss tangent.
As a further technical scheme of the invention, the solid plasma is realized by an array formed by PIN units, and isolation layers are arranged among the PIN units for isolation.
As a further technical scheme of the invention, four solid-state plasma resonance units are symmetrically distributed on a diagonal line on the dielectric substrate, and the two solid-state plasma resonance units on the diagonal line have the same size.
As a further technical scheme of the invention, in the solid-state plasma resonance unit at the upper left corner: the cross-shaped gap is formed by rectangular gaps with the lengths of 7.476mm and 7.437mm and the widths of 0.174 mm; the inner diameter of the semi-circular solid plasma unit is 6.0456mm, and the width of the semi-circular solid plasma unit is 0.7328 mm; the side length of the inverted triangle annular solid plasma unit is 6.87mm, and the width of the inverted triangle annular solid plasma unit is 0.7328 mm; the length of the open square ring-shaped solid-state plasma unit on the inner side in the nested structure is 7.026mm, the width of the open square ring-shaped solid-state plasma unit is 6.611mm, the width of the open square ring-shaped solid-state plasma unit is 0.72mm, and the distance from the open square ring-shaped solid-state plasma unit to the cross-shaped solid-state plasma unit is 35; the length of the open square ring solid-state plasma unit on the outer side in the nested structure is 12.605mm, the width of the open square ring solid-state plasma unit is 8.05mm, the width of the open square ring solid-state plasma unit is 0.72mm, and the distance from the open square ring solid-state plasma unit on the inner side is 0.72 mm; the two open square ring-shaped solid-state plasma units are respectively connected with the bottom layer reflecting plate through plasma columns with the radius of 0.1832 mm;
in the solid plasma resonance unit at the upper right corner: the cross-shaped gap is formed by rectangular gaps with the lengths of 8.162mm and 8.120mm and the widths of 0.19 mm; the inner diameter of the semi-circular solid plasma unit is 6.7mm, and the width of the semi-circular solid plasma unit is 0.8 mm; the side length of the inverted triangle annular solid plasma unit is 7.5mm, and the width of the inverted triangle annular solid plasma unit is 0.8 mm; the length of the open square ring-shaped solid-state plasma unit on the inner side in the nested structure is 7.11mm, the width of the open square ring-shaped solid-state plasma unit is 6.689mm, the width of the open square ring-shaped solid-state plasma unit is 0.728mm, and the distance between the open square ring-shaped solid-state plasma unit and the cross-shaped solid-state plasma unit is 7.; the length of the open square ring solid-state plasma unit on the outer side in the nested structure is 12.754mm, the width of the open square ring solid-state plasma unit is 8.147mm, the width of the open square ring solid-state plasma unit is 0.728mm, and the distance from the open square ring solid-state plasma unit on the inner side is 0.729 mm; the two open square ring-shaped solid plasma units are respectively connected with the bottom layer reflecting plate through plasma columns with the radius of 0.2 mm.
As a further technical scheme of the invention, in a microwave band, the bottom reflecting plate adopts a metal reflecting plate; in the frequency bands of terahertz and light waves, the bottom layer reflecting plate adopts a multilayer medium reflecting plate or an artificial structure array with reflecting characteristics.
Compared with the prior art, the invention adopting the technical scheme has the following technical effects:
(1) the crown type adjustable plasma metamaterial broadband wave absorber has the advantages that the structural unit adopts a diagonal line symmetrical structure, and the absorbing effect on TE polarized waves and TM polarized waves is good;
(2) the invention adopts the solid plasma to replace metal to work, and controls the excitation state of the excitation area of the solid plasma through the programmable logic array, thereby realizing the dynamic regulation and control of different frequencies and achieving the effect of narrow-band absorption; the working frequency of the device can efficiently cover the whole X wave band under the condition of selecting proper excitation area range through proper parameter setting;
(3) the invention relates to a crown-shaped adjustable plasma metamaterial broadband wave absorber, which realizes three different excitation states through programming when electromagnetic waves enter so as to obtain a tunable absorption spectrum. The absorption peak value of the wave absorber in a specific frequency region can be increased and the absorption frequency band can be widened by determining the excitation region and the excitation state through reasonable program setting, so that the absorption rate and the absorption efficiency are improved;
(4) the invention can realize the absorption of lower frequency electromagnetic wave under smaller physical size, and has the characteristics of novel structure, programmable regulation, flexible design, strong functionality and the like.
Drawings
FIG. 1 is a front view of a structural unit of a crown type adjustable plasma metamaterial broadband wave absorber;
FIG. 2 is a front view of a structural unit of a crown type adjustable plasma metamaterial broadband wave absorber;
FIG. 3 is a side view of a structural unit of a crown type adjustable plasma metamaterial broadband wave absorber;
FIG. 4 is a structural diagram front view of a crown type adjustable plasma metamaterial broadband wave absorber array (3 × 3) in a state;
FIG. 5 is a perspective view of a structural unit of a crown type adjustable plasma metamaterial broadband wave absorber;
FIG. 6 is an excitation control diagram of different resonance units of a crown-shaped adjustable plasma metamaterial broadband wave absorber;
FIG. 7 is a front view of a state two structure unit of a crown type adjustable plasma metamaterial broadband wave absorber;
FIG. 8 is a front view of three structural units in a state of a crown type adjustable plasma metamaterial broadband wave absorber;
FIG. 9 is an absorption curve of a first state when TE-mode electromagnetic waves of a crown-shaped adjustable plasma metamaterial broadband wave absorber are vertically incident;
FIG. 10 is an absorption curve of a first state when a crown-shaped adjustable plasma metamaterial broadband wave absorber TM-mode electromagnetic wave is vertically incident;
FIG. 11 is an absorption curve of a second state when a crown-shaped adjustable plasma metamaterial broadband wave absorber TE mode electromagnetic waves are vertically incident;
FIG. 12 is an absorption curve of a third state when a crown-shaped adjustable plasma metamaterial broadband wave absorber TE mode electromagnetic waves are vertically incident;
FIG. 13 is an absorption curve of a crown-shaped adjustable plasma metamaterial broadband wave absorber when TE mode electromagnetic waves are vertically incident and resonant unit structures are different;
the reference signs explain: 13-dielectric substrate, 1, 2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12-resonance unit composed of solid plasma, 14-metal reflecting plate, 15, 16, 17, 18, 19, 20, 21, 22, 23, 24, 25, 26-solid plasma excitation source.
Detailed Description
The technical scheme of the invention is further explained in detail by combining the attached drawings:
the invention relates to a crown type adjustable plasma metamaterial broadband wave absorber, wherein a periodic structure unit of the wave absorber is in a diagonal symmetrical structure and comprises a bottom reflecting plate, a dielectric substrate, a solid plasma resonance unit and a plasma excitation source controlled by a programmable logic array, the bottom reflecting plate is provided with the dielectric substrate (FR-4 with a larger loss tangent), the dielectric substrate is provided with the solid plasma resonance unit, the plasma resonance unit is excited by being connected with the plasma excitation source, and the on-off of each plasma excitation source is controlled by programming a control logic array. In the invention, the solid plasma excitation source is controlled by the programmable logic array, so that the aim of dynamically regulating and controlling different frequencies of the wave absorber is fulfilled, the broadband absorption of the wave absorber is realized, and the working frequency of the wave absorber can cover the whole X wave band under the condition that the excitation area is properly selected.
In the invention, each solid plasma resonance unit has a similar structure, a cross-shaped solid plasma unit is arranged at the center as shown in fig. 1 to 4, a cross-shaped gap is arranged at the center of the cross-shaped solid plasma unit, a semicircular annular solid plasma unit with an inward opening is arranged above the cross-shaped solid plasma unit, a nested structure formed by two square annular solid plasma units with inward openings is arranged below the cross-shaped solid plasma unit, and the left side and the right side of the cross-shaped solid plasma unit are respectively half of an inverted triangular annular solid plasma unit and connected with the semicircular annular solid plasma unit above the cross-shaped solid plasma unit. And the two square annular solid-state plasma units with the inward openings are respectively connected with the bottom reflecting plate through the plasma columns.
The solid plasma resonance unit has two states, namely an excited state and an unexcited state, the solid plasma is realized by an array formed by PIN units, and isolation layers are arranged between the PIN units for isolation. The resonant unit formed by the solid plasma is realized by exciting the PIN unit array, and is excited by applying a bias voltage to two ends of the resonant unit, as shown in FIG. 6.
The wave absorber is formed by periodically arranging structural units, wherein the structural units have three working states, namely, a state I, a state II and a state II, wherein the structural units comprise a bottom layer metal reflecting plate 14, a medium substrate 13 and all excited solid-state plasma resonance; the structural units of the state II comprise a bottom layer metal reflecting plate 14, a dielectric substrate 13 and excited solid state plasma resonance units 1, 3, 4, 6, 7, 9, 10 and 12, the structural units of the state III comprise a bottom layer metal reflecting plate 14, a dielectric substrate 13 and excited solid state plasma resonance units 2, 3, 5, 6, 8, 9, 11 and 12, and the working states can be realized by programming a programmable logic array in an excitation control module, so that the aim of regulating and controlling the working state of the resonance unit formed by the solid state plasma is fulfilled.
The resonant unit is composed of solid plasma with each PIN unit size of 0.1mm × 0.1mm, and the Drude model is selected to describe the dielectric constant of the solid plasma, wherein the plasma frequency is 2.9 × 1015rad/s with a collision frequency of 1.65X 10141/S, as shown in FIG. 5. The resonant cells 1, 2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12 are excited by plasma excitation sources 15, 16, 17, 18, 19, 20, 21, 22, 23, 24, 25, 26, respectively, as shown in fig. 6.
According to the method for generating the crown-shaped adjustable plasma metamaterial broadband wave absorber, the wave absorber is insensitive to polarization of incident electromagnetic waves, and when the electromagnetic waves are vertically incident, the absorption effect of the state I is caused when all resonance units formed by solid plasmas are excited simultaneously; the absorption effect of state two is caused when the resonant cells 1, 3, 4, 6, 7, 9, 10, 12, which are constituted by solid plasma, are excited; the absorption effect of state three is caused when the resonant cells 2, 3, 5, 6, 8, 9, 11, 12, which are formed by solid plasma, are excited. The state described is the state in which the absorption is best when all the resonant cells, which are constituted by the plasma, are excited. The tunable absorption frequency can be realized in a programming mode while better wave absorption performance is realized.
The reflecting plate of the wave absorber is different in different frequency bands, for example, the reflecting plate can be an all-metal plate such as copper, aluminum and the like in a microwave band; in terahertz and light wave frequency bands, the reflecting plate can adopt a multilayer dielectric reflecting plate (such as a photonic crystal) or an artificial structure array with reflecting characteristics.
A crown-shaped adjustable plasma metamaterial broadband wave absorber is formed by periodically arranging a plurality of resonant units. The wave absorber has three working states, wherein a structural unit of the wave absorber is shown in figures 1 and 2, the bottom layer is a complete metal plate for total reflection, the middle layer is a medium substrate, all excited solid-state plasma resonance units are arranged on the medium substrate, and an array (3 multiplied by 3) of the wave absorber is shown in figure 4; in the second state, the structural units are shown in fig. 7, the bottom layer is a complete metal plate, the middle part is a dielectric substrate, and excited solid-state plasma resonance units 1, 3, 4, 6, 7, 9, 10 and 12 are arranged on the dielectric substrate; the structural unit of the third state is shown in fig. 8, the bottom layer is a complete metal plate, the middle part is a dielectric substrate, and the upper surface of the dielectric substrate is excited solid-state plasma resonance units 2, 3, 5, 6, 8, 9, 11 and 12.
In an embodiment of the present invention, four solid-state plasma resonance units are symmetrically distributed on a diagonal line of the dielectric substrate, and two solid-state plasma resonance units on the diagonal line have the same size. The middle of the resonance structure at the upper left corner is provided with a cross-shaped resonance unit with cross-shaped thin slits, the length of the cross-shaped thin slits at the middle is 7.476mm and 7.437mm, and the width of the cross-shaped thin slits at the middle is 0.174 mm. The resonance unit of top is 6.0456mm by triangle-shaped limit and internal diameter, the semicircle ring that the width is 0.7328mm forms through the combined design, cross resonance unit 6.409 mm's resonance unit is for 7.026mm in the middle of the below distance, wide for 6.611mm, the half open square ring resonance unit that the width is 0.72mm, be 12.605mm apart from this resonance unit 0.72mm, wide for 8.05mm, the half open square resonance unit that the width is 0.72mm, two half open square ring respectively are connected with the bottom reflecting plate through the plasma post that the radius is 0.1832 mm. The middle of the upper right corner resonant structure is also provided with a cross-shaped resonant unit with cross-shaped thin slits, the length of the cross-shaped thin slits in the middle is 8.162mm and 8.120mm, and the width of the cross-shaped thin slits in the middle is 0.19 mm. The resonance unit of top is 6.7mm by triangular limit and internal diameter, the semicircle ring that the width is 0.8mm forms through the combined design, below is apart from the resonance unit of central cross resonance unit 7.23mm for long 7.11mm wide 6.689mm, the width is the square ring resonance unit of half open type of 0.728mm, be 0.729mm apart from this resonance unit for long 12.754mm, wide 8.147mm, the width is 0.728mm square resonance unit of half open type, two half open type quad ring respectively are connected with the bottom reflecting plate through the plasma post that the radius is 0.2 mm.
Relevant parameters of the resonant unit in the metamaterial broadband wave absorber are shown in table 1.
TABLE 1 relevant parameters of the resonant cells
| Parameter(s) | a1 | b1 | c1 | d1 |
| Value of parameter (mm) | 7.786 | 6.0456 | 0.7328 | 12.605 |
| Parameter(s) | e1 | f1 | g1 | t1 |
| Value of parameter (mm) | 7.026 | 0.720 | 0.720 | 0.174 |
| Parameter(s) | a2 | b2 | c2 | d2 |
| Value of parameter (mm) | 8.5 | 6.7 | 0.8 | 12.754 |
| Parameter(s) | e2 | f2 | g2 | h |
| Value of parameter (mm) | 7.11 | 0.728 | 0.729 | 3.6 |
| Parameter(s) | t2 | l | r1 | r2 |
| Value of parameter (mm) | 0.19 | 60 | 0.1832 | 0.2 |
| Parameter(s) | f3 | f4 | k1 | w |
| Value of parameter (mm) | 0.7328 | 0.8 | 7.825 | 0.0138 |
| Parameter(s) | j1 | k2 | j2 | |
| Value of parameter (mm) | 6.611 | 8.543 | 6.689 |
As shown in fig. 9 and 10, which are absorption curves of the wave absorber state in different operation modes, and fig. 11 and 12 which are absorption curves of the wave absorber in other two operation states, because the wave absorber is polarization insensitive to incident electromagnetic waves. The other two states except the first state are absorption curves obtained in the TE mode, and electromagnetic waves are incident along the-z direction during operation. The absorption formula a (ω) is 1-R (ω) -T (ω), where R (ω) represents the reflectance and T (ω) represents the transmittance, and since T (ω) is 0 since the bottom layer is a complete metal reflective plate, a (ω) is 1-R (ω). Fig. 9 and 10 are absorption curves of different modes of state one (all resonant units are excited simultaneously), fig. 9 is an absorption curve of the wave absorber operating in the TE mode, the reflectivity in the frequency band from 8.976GHz to 11.291GHz is lower than-10 dB, the absorption rate is higher than 90%, and the absorption peaks at five absorption frequency points of 9.09GHz, 9.77GHz, 10.23GHz, 10.45GHz and 11GHz are 99.44%, 99.81%, 99.02%, 99.96% and 99.44%, respectively, so that the effect of broadband absorption is achieved. FIG. 10 is an absorption curve of the wave absorber operating in a TM mode, the reflectivity in a frequency band from 8.881GHz to 11.203GHz is lower than-10 dB, the absorptivity is higher than 90%, and the absorption peaks at six absorption frequency points of 8.98GHz, 9.43GHz, 9.62GHz, 10.12GHz, 10.49GHz and 10.95GHz are 97.3%, 99.97%, 99.93%, 99.95%, 98.71% and 94.94%, respectively. Fig. 11 shows the absorption curve for state two ( resonant cells 1, 3, 4, 6, 7, 9, 10, 12 excited) with three narrow-band absorption peaks at 8.577GHz, 9.214GHz, and 10.072GHz, respectively, and absorbances at 94.26%, 92.13%, and 97.16%, respectively. Fig. 12 is an absorption curve for state three ( resonant cells 2, 3, 5, 6, 8, 9, 11, 12 excited) with a reflectivity below-10 dB in the frequency band 9.587GHz to 9.865GHz, an absorption above 90%, and an absorption peak at the absorption frequency 9.717GHz of 99.5%. Comparing the three states, it can be seen that the resonant unit formed by the solid plasma has the best absorption effect when being excited simultaneously, and can realize the broadband absorption of the wave absorber. Obviously, the positions and the number of the working frequency points of the wave absorber can be manually regulated and controlled in a programming mode.
As shown in fig. 13, the curve is an absorption curve when the resonant cells composed of solid plasma are excited at the same time; and the second curve is that the length and the width of the cross-shaped fine slit in the resonant structure of each part are changed into 0, so that the resonant unit is excited in a newly reconstructed shape. As can be seen from fig. 13, the absorption characteristics have changed significantly after the wave absorber is modified. The absorptivity reaches over 90 percent at 9.1GHz to 9.68GHz, 9.89GHz to 10.67GHz and 10.96GHz to 11.4GHz, and the absorption lines move to the high frequency direction. Obviously, the absorption spectrum line can be moved by changing the shape of the solid plasma resonance unit, so that the purpose of covering the whole X-wave band by an absorption peak is achieved, and the working frequency and the performance of the wave absorber are regulated and controlled.
After being specially designed (programmed) the working frequency of the invention can cover the whole X wave band. The main absorption is caused by a resonance unit formed by solid plasma, and the narrow-band absorption of electromagnetic waves can be realized under a smaller physical size.
In conclusion, the plasma metamaterial broadband wave absorber has a good absorption effect on both TE polarized waves and TM polarized waves, and the excitation area of the resonance unit formed by the solid plasma is controlled in a programming mode, so that excitation on different resonance units can be realized, the purpose of dynamically regulating and controlling different frequencies of the wave absorber is achieved, broadband absorption of the wave absorber is realized, and the working frequency of the wave absorber can cover the whole X wave band under the condition that the excitation area is selected to be proper. The crown-shaped adjustable plasma metamaterial broadband wave absorber can absorb electromagnetic waves with lower frequency under smaller physical size, and has the characteristics of novel structure, programmable adjustment, flexible design, strong functionality and the like.
The foregoing illustrates and describes the principles, general features, and advantages of the present invention. It will be understood by those skilled in the art that the present invention is not limited to the embodiments described above, which are intended to further illustrate the principles of the invention, and that various changes and modifications may be made without departing from the spirit and scope of the invention, which is intended to be protected by the appended claims. The scope of the invention is defined by the claims and their equivalents.
Claims (6)
1. A crown-shaped adjustable plasma metamaterial broadband wave absorber is characterized by comprising a bottom reflecting plate, wherein a dielectric substrate is arranged on the bottom reflecting plate, and a plurality of solid plasma resonance units which are symmetrically arranged diagonally and periodically are arranged on the dielectric substrate;
the structure of each solid plasma resonance unit is the same, a cross-shaped solid plasma unit is arranged at the center, a cross-shaped gap is arranged at the center of the cross-shaped solid plasma unit, a semicircular annular solid plasma unit with an inward opening is arranged above the cross-shaped solid plasma unit, a nested structure formed by two square annular solid plasma units with inward openings is arranged below the cross-shaped solid plasma unit, and the left side and the right side of the cross-shaped solid plasma unit are respectively half of an inverted triangular annular solid plasma unit and connected with the semicircular annular solid plasma unit above the cross-shaped solid plasma unit;
each solid-state plasma unit is respectively connected with a plasma excitation source for excitation, and the on-off of each plasma excitation source is controlled by a programming control logic array;
the solid plasma is realized by an array formed by PIN units, and isolation layers are arranged among the PIN units for isolation.
2. The crown-type adjustable plasma metamaterial broadband wave absorber according to claim 1, wherein the two open square-ring-shaped solid-state plasma units with inward openings are respectively connected with the bottom reflecting plate through plasma columns.
3. The crown type tunable plasma metamaterial broadband wave absorber according to claim 1, wherein the dielectric substrate is FR-4 with loss tangent.
4. The crown-shaped adjustable plasma metamaterial broadband wave absorber according to claim 1, wherein four solid plasma resonance units are symmetrically distributed on a diagonal line of the dielectric substrate, and two solid plasma resonance units on the diagonal line have the same size.
5. The crown-type adjustable plasma metamaterial broadband wave absorber according to claim 4, wherein in the solid plasma resonance unit at the upper left corner: the cross-shaped gap is formed by rectangular gaps with the lengths of 7.476mm and 7.437mm and the widths of 0.174 mm; the inner diameter of the semi-circular solid plasma unit is 6.0456mm, and the width of the semi-circular solid plasma unit is 0.7328 mm; the side length of the inverted triangle annular solid plasma unit is 6.87mm, and the width of the inverted triangle annular solid plasma unit is 0.7328 mm; the length of the open square ring-shaped solid-state plasma unit on the inner side in the nested structure is 7.026mm, the width of the open square ring-shaped solid-state plasma unit is 6.611mm, the width of the open square ring-shaped solid-state plasma unit is 0.72mm, and the distance from the open square ring-shaped solid-state plasma unit to the cross-shaped solid-state plasma unit is 35; the length of the open square ring solid-state plasma unit on the outer side in the nested structure is 12.605mm, the width of the open square ring solid-state plasma unit is 8.05mm, the width of the open square ring solid-state plasma unit is 0.72mm, and the distance from the open square ring solid-state plasma unit on the inner side is 0.72 mm; the two open square ring-shaped solid-state plasma units are respectively connected with the bottom layer reflecting plate through plasma columns with the radius of 0.1832 mm;
in the solid plasma resonance unit at the upper right corner: the cross-shaped gap is formed by rectangular gaps with the lengths of 8.162mm and 8.120mm and the widths of 0.19 mm; the inner diameter of the semi-circular solid plasma unit is 6.7mm, and the width of the semi-circular solid plasma unit is 0.8 mm; the side length of the inverted triangle annular solid plasma unit is 7.5mm, and the width of the inverted triangle annular solid plasma unit is 0.8 mm; the length of the open square ring-shaped solid-state plasma unit on the inner side in the nested structure is 7.11mm, the width of the open square ring-shaped solid-state plasma unit is 6.689mm, the width of the open square ring-shaped solid-state plasma unit is 0.728mm, and the distance between the open square ring-shaped solid-state plasma unit and the cross-shaped solid-state plasma unit is 7.; the length of the open square ring solid-state plasma unit on the outer side in the nested structure is 12.754mm, the width of the open square ring solid-state plasma unit is 8.147mm, the width of the open square ring solid-state plasma unit is 0.728mm, and the distance from the open square ring solid-state plasma unit on the inner side is 0.729 mm; the two open square ring-shaped solid plasma units are respectively connected with the bottom layer reflecting plate through plasma columns with the radius of 0.2 mm.
6. The crown type adjustable plasma metamaterial broadband wave absorber according to claim 1, wherein in a microwave band, the bottom reflecting plate is a metal reflecting plate; in the frequency bands of terahertz and light waves, the bottom layer reflecting plate adopts a multilayer medium reflecting plate or an artificial structure array with reflecting characteristics.
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| CN110994091A (en) * | 2019-12-13 | 2020-04-10 | 华南理工大学 | Terahertz tunable filter based on super surface |
| CN113359326B (en) * | 2020-03-05 | 2022-05-31 | 南京邮电大学 | Electromagnetic modulator based on plasma metamaterial and multifunctional modulation method |
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| CN102903397A (en) * | 2011-07-29 | 2013-01-30 | 深圳光启高等理工研究院 | Artificial broadband absorbing electromagnetic material |
| CN106847903A (en) * | 2016-12-20 | 2017-06-13 | 西安科锐盛创新科技有限公司 | For the preparation method of the heterogeneous SPiN diodes of SiGe bases of restructural loop aerial |
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| CN102903397A (en) * | 2011-07-29 | 2013-01-30 | 深圳光启高等理工研究院 | Artificial broadband absorbing electromagnetic material |
| CN106847903A (en) * | 2016-12-20 | 2017-06-13 | 西安科锐盛创新科技有限公司 | For the preparation method of the heterogeneous SPiN diodes of SiGe bases of restructural loop aerial |
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