CN108183341B - Tunable ultra-wideband wave absorber with multilayer support structure - Google Patents
Tunable ultra-wideband wave absorber with multilayer support structure Download PDFInfo
- Publication number
- CN108183341B CN108183341B CN201810194060.XA CN201810194060A CN108183341B CN 108183341 B CN108183341 B CN 108183341B CN 201810194060 A CN201810194060 A CN 201810194060A CN 108183341 B CN108183341 B CN 108183341B
- Authority
- CN
- China
- Prior art keywords
- solid
- plasma resonance
- resonance unit
- solid plasma
- support structure
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q17/00—Devices for absorbing waves radiated from an antenna; Combinations of such devices with active antenna elements or systems
- H01Q17/007—Devices for absorbing waves radiated from an antenna; Combinations of such devices with active antenna elements or systems with means for controlling the absorption
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/003—Light absorbing elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q17/00—Devices for absorbing waves radiated from an antenna; Combinations of such devices with active antenna elements or systems
- H01Q17/008—Devices for absorbing waves radiated from an antenna; Combinations of such devices with active antenna elements or systems with a particular shape
Abstract
The invention discloses a novel tunable ultra-wideband wave absorber with a multilayer support structure, which structurally comprises a bottom metal reflecting plate, a medium substrate above the metal plate and three square-ring-shaped plasma resonance structures on the medium substrate, wherein a resistor is bridged between two square rings, a tree-fork-shaped solid-state plasma resonance unit in the medium substrate, a triangular ring-shaped plasma resonance unit of the bridged resistor and a conical solid-state plasma resonance unit connected with each resonance unit. The wave absorber has a good absorption effect on TE polarized waves, the excitation area of the resonance unit formed by the solid plasma is controlled in a programming mode, the excitation of different resonance units can be realized, the purpose of dynamically regulating and controlling different frequencies of the wave absorber is achieved, the ultra-wideband absorption of the wave absorber is realized, the working frequency of the wave absorber can cover a plurality of electromagnetic wave bands under the condition that the excitation area is properly selected, and the absorption of lower-frequency electromagnetic waves can be realized under the condition of smaller physical size.
Description
Technical Field
The invention relates to a novel tunable ultra-wideband wave absorber with a multilayer support structure, belonging to the technical field of radio communication and microwave devices.
Background
The metamaterial is a periodic dielectric medium or metal array manufactured artificially, the microstructure of the metamaterial is far smaller than the working wavelength of the metamaterial, and the metamaterial has wide application prospects in a plurality of fields such as electromagnetic stealth of military equipment, electromagnetic protection of civil equipment and the like due to the peculiar electromagnetic property of the metamaterial. An important application of the electromagnetic metamaterial in the aspect of electromagnetism is to generate an electromagnetic metamaterial wave absorber. The metamaterial wave absorber has the resonance absorption characteristic that the metamaterial wave absorber has wide application prospect in the field of microwave absorption, different geometric structures need specific electromagnetic wave polarization modes, the frequency band of resonance is very narrow, and the practical application of the metamaterial wave absorber is limited to a certain extent. The plasma metamaterial has many excellent characteristics in the design of the wave absorber due to the special properties of solid plasma, is formed on a semiconductor intrinsic layer in an electric or light excitation mode, and when the carrier concentration in the formed solid plasma reaches a certain value, the electric conductivity of the solid plasma metamaterial is comparable to that of metal. When the material is not excited into solid plasma, the semiconductor material shows the characteristics of a medium, and the electromagnetic stealth performance can be realized by the characteristic of low RCS when the material is not responded to electromagnetic waves, so that the material can be used for manufacturing a tunable/reconfigurable microwave device.
Disclosure of Invention
The invention aims to: aiming at the defects in the prior art, the tunable ultra-wideband wave absorber with the multilayer support structure is provided, and the excitation state of the excitation area of the solid plasma is controlled through a programmable logic array, so that dynamic regulation and control of different frequencies are realized, and the effect of ultra-wideband absorption is achieved.
In order to achieve the purpose, the technical scheme of the invention is as follows: a tunable ultra-wideband wave absorber with a multilayer support structure comprises a reflecting plate and a dielectric substrate above the reflecting plate, wherein solid plasma resonance units are respectively arranged inside the dielectric substrate and on the surface of the dielectric substrate; the solid plasma resonance unit positioned in the medium substrate is provided with two layers, the solid plasma resonance unit on the upper layer is connected with the solid plasma resonance unit on the lower layer through a first plasma cone, and the solid plasma resonance unit on the lower layer is connected with the bottom reflecting plate through a second plasma cone;
and each solid plasma resonance unit is excited by being connected with a plasma excitation source, and the on-off of each plasma excitation source is controlled by a programming control logic array.
The technical scheme of the invention is further defined as follows: the solid plasma resonance unit positioned on the surface of the dielectric substrate is in a square ring shape and consists of three discrete square ring-shaped solid plasma resonance units with openings, and the two outer plasma resonance units are connected through a resistor;
the upper layer solid plasma resonance unit positioned in the medium substrate is in an equilateral triangle ring shape, an opening is arranged at the midpoint of each side line of the triangle, the solid plasma resonance unit is cut into three parts through the opening, and the three parts are connected through a resistor;
the lower layer solid plasma resonance unit is Y-shaped, three branches of the lower layer solid plasma resonance unit are distributed along the symmetrical axis of the equilateral triangle ring by taking the center of the equilateral triangle ring as an endpoint, and two endpoints are respectively connected with the upper layer solid plasma resonance unit through the first plasma cone.
Furthermore, the side lengths of the square annular solid plasma resonance unit are respectively 2.5mm, 7mm and 8mm from inside to outside. The side lengths of the equilateral triangle solid plasma resonance units are respectively 6.9mm and 10.9mm, and the broadband is 0.1 mm. The side length of each branch of the Y-shaped solid plasma resonance unit is 6.4mm, and the width of each branch of the Y-shaped solid plasma resonance unit is 0.1 mm. The height of a plasma cone of the first solid-state plasma resonance unit is 1.4mm, and the radius of the bottom surface is 0.2857 mm; the height of the plasma cone of the second solid state plasma resonance unit and the bottom reflection plate is 0.1mm, and the radius is 0.2857 mm.
Further, the solid plasma is realized by an array formed by PIN units, and isolation layers are arranged among the PIN units for isolation; each resonance structure is respectively connected with a plasma excitation source and excited by loading bias voltage at two ends of the resonance structure; by an array of PIN cells exciting a solid plasma.
Furthermore, the reflecting plate is made of different materials in different frequency bands; in the microwave frequency band, the reflecting plate adopts a complete metal reflecting plate, and in the frequency bands of terahertz and light waves, the reflecting plate adopts a multilayer dielectric reflecting plate or an artificial structure array with reflecting characteristics.
Further, the dielectric substrate is FR-4 with loss tangent.
Compared with the prior art, the invention adopting the technical scheme has the following technical effects:
(1) the novel tunable ultra-wideband wave absorber with the multilayer support structure controls the excitation state of an excitation area of solid plasma in a manner of loading lumped resistors and through a programmable logic array, so that dynamic regulation and control of different frequencies are realized, and the effect of ultra-wideband absorption is achieved; through proper parameter setting, the working frequency can cover a plurality of frequency bands under the condition that the selection of the excitation area range is proper.
(2) According to the novel tunable ultra-wideband wave absorber with the multilayer support structure, when electromagnetic waves are incident, four different excitation states are realized through programming, so that tunable absorption frequency spectrum is obtained; the absorption peak value of the wave absorber in a specific frequency region can be increased and the absorption frequency band can be widened by determining the excitation region and the excitation state through reasonable program setting.
(3) The invention can realize the absorption of lower frequency electromagnetic wave under smaller physical size, and has the characteristics of popular structure, programmable regulation, flexible design, strong functionality and the like.
Drawings
The invention will be further described with reference to the accompanying drawings.
Fig. 1 is a front view of the present invention.
Fig. 2 is a front view of lumped resistance of a solid state plasmon resonance unit of the present invention.
Fig. 3 is a side view of the present invention.
FIG. 4 is a front view of the array (3') of the present invention.
Fig. 5 is a perspective view of a solid-state plasma resonance unit inside a dielectric substrate according to the present invention.
FIG. 6 is a perspective view of a solid state plasma resonance unit on the surface of a dielectric substrate according to the present invention.
FIG. 7 is a diagram illustrating the control of the excitation of the solid state plasma resonance unit inside the dielectric substrate according to the present invention.
FIG. 8 is an excitation control diagram of the solid-state plasma resonance unit on the surface of the dielectric substrate according to the present invention.
Fig. 9 is an excitation control diagram of the plasmon resonance unit according to the present invention.
FIG. 10 is an absorption curve of the first state of the invention when the TE mode electromagnetic wave is vertically incident.
FIG. 11 is an absorption curve of the second state of the invention when the TE mode electromagnetic wave is vertically incident.
FIG. 12 is a graph showing the absorption curve of the third state of the invention when the TE mode electromagnetic wave is vertically incident.
FIG. 13 is an absorption curve of the TE mode electromagnetic wave of the present invention in a state of being vertically incident.
FIG. 14 is a graph showing absorption curves of different widths of outer triangular rings when TE mode electromagnetic waves are perpendicularly incident.
Reference numerals: 18-dielectric substrate, 1, 2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14-resonant unit composed of solid plasma, 19-metal reflector, 20, 21, 22, 23, 24, 25, 26, 27, 28, 29, 30, 31, 32, 33-solid plasma excitation source, 15, 16, 17-resistance,
34-solid plasma region, 35-isolation region.
Detailed Description
The embodiment provides a tunable ultra-wideband wave absorber with a multilayer support structure, which is shown in fig. 1 to 9, and the structure of the tunable ultra-wideband wave absorber is composed of a bottom reflecting plate, a dielectric substrate, a solid-state plasma resonance unit and a plasma excitation source controlled by a programmable logic array.
Wherein, be provided with the dielectric substrate on the bottom reflecting plate, the dielectric substrate is FR-4 that has great loss tangent, and its inside has two-layer solid state plasma resonance structure: the upper layer solid plasma resonance structure is formed by cutting two separated equilateral triangle rings into three parts respectively, the three parts are connected through resistors, the resistance values are 570 omega and 800 omega respectively, and the lower layer Y-shaped solid plasma resonance structure is connected with the upper layer resonance structure and the bottom layer reflection plate through plasma cones respectively. The solid plasma resonance unit on the surface of the dielectric substrate is formed by cutting three discrete square annular solid plasma resonance units into two parts, the two discrete solid plasma resonance units on the outer layer are connected through resistors, and the resistance values are all 500 omega. Each solid plasma resonance unit is respectively connected with a plasma excitation source for excitation, and the on-off of each plasma excitation source is controlled by a programming control logic array, so that the dynamic regulation and control of the absorption performance of the suction filter are realized.
The solid state plasma resonance unit has two states, an excited state and an unexcited state. The solid plasma is realized by an array formed by PIN units, and isolation layers are arranged among the PIN units for isolation. The resonance unit formed by the solid plasma is realized by exciting the PIN unit array, and is excited by loading bias voltage at two ends of the resonance unit.
In the invention, the excitation state of the excitation area of the solid plasma is controlled by the programmable logic array through loading the lumped resistor and adopting the solid plasma to replace metal to work, so that dynamic regulation and control of different frequencies are realized, the effect of ultra-wideband absorption is achieved, and the working frequency of the wave absorber can cover a plurality of electromagnetic wave bands under the condition that the excitation area is properly selected. The wave absorber is formed by periodically arranging structural units.
The technical solution of the present invention is further illustrated by the following specific examples:
the novel tunable ultra-wideband wave absorber with the multilayer support structure has the following working states: state one, its structural unit includes the bottom metal reflecting plate 19, the dielectric base plate 18 and the solid state plasma resonance unit 1, 2, 3, 4, 5, 6, 7, 8, 9, 13, 14 excited; the structural units of the state II comprise a bottom layer metal reflecting plate 19, a dielectric substrate 18 and excited solid state plasma resonance units 1, 2, 3, 4, 5, 6, 7, 8, 9, 10, 13 and 14; the structural units of the state III comprise a bottom layer metal reflecting plate 19, a dielectric substrate 18 and excited solid-state plasma resonance units 1, 2, 3, 4, 5, 6, 7, 8, 9, 11, 12, 13 and 14; the structural units of the state four comprise a bottom layer metal reflecting plate 19, a dielectric substrate 18 and all excited solid state plasma resonance units. The parameters corresponding to the wave absorber are shown in table 1. The working states can be realized by programming a programmable logic array in the excitation control module, so that the aim of regulating and controlling the working state of the resonance unit formed by the solid-state plasma is fulfilled.
The resonance unit is composed of solid-state plasma, each PIN unit of which is 0.1mm '0.1 mm in size, and a Drude model is selected to describe the dielectric constant of the solid-state plasma, wherein the frequency of the plasma is 2.9' 1014rad/s, with a collision frequency of 1.65' 10131/S, as shown in FIG. 6.
The solid-state plasmon resonance units 1, 2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14 are excited by plasma excitation sources 20, 21, 22, 23, 24, 25, 26, 27, 28, 29, 30, 31, 32, 33, respectively, as shown in fig. 7, 8, and 9.
The invention relates to a method for generating a tunable ultra-wideband wave absorber with a multilayer structure by using a plasma metamaterial, wherein the wave absorber is polarization-sensitive to incident electromagnetic waves, and when the electromagnetic waves vertically enter, the absorption effect of a state I is caused when a resonance unit formed by resistors connected among resonance monomers and solid plasmas 1, 2, 3, 4, 5, 6, 7, 8, 9, 13 and 14 is excited simultaneously; the absorption effect of the second state is caused when the resonance units consisting of the resistance connected between the resonance single bodies and the solid- state plasmas 1, 2, 3, 4, 5, 6, 7, 8, 9, 10, 13 and 14 are excited simultaneously; the absorption effect of the state three is caused when the resonance units consisting of the resistance connected between the resonance cells and the solid- state plasmas 1, 2, 3, 4, 5, 6, 7, 8, 9, 11, 12, 13 and 14 are excited simultaneously; the state four absorption effect is caused when all resonance units formed by the resistance connected between the resonance single bodies and the solid plasma are excited; compared with the three wave absorbers, the wave absorber has the best absorption effect in the first state.
The reflecting plate of the wave absorber is different in different frequency bands, for example, the reflecting surface of the wave absorber can be made of all-metal plates such as copper and aluminum in microwave bands; in terahertz and light wave frequency bands, the reflecting plate can adopt a multilayer dielectric reflecting plate (such as a photonic crystal) or an artificial structure array with reflecting characteristics.
The medium substrate of the wave absorber can also be artificially synthesized medium with specific characteristics, such as gel type (flexible) medium obtained by a solution proportioning method, and then the medium substrate is combined with the flexible substrate to realize conformal ultra-wideband absorption.
The novel tunable ultra-wideband wave absorber with the multilayer support structure can realize good wave absorption and can realize tunable absorption frequency in a programming mode.
A novel tunable ultra-wideband wave absorber with a multilayer support structure is formed by periodically arranging a plurality of resonance units. The wave absorber has four working states, wherein in one working state, the bottom layer of a structural unit is a complete metal plate for total reflection, and a dielectric substrate, a resistor and excited solid plasma resonance units 1, 2, 3, 4, 5, 6, 7, 8, 9, 13 and 14 are arranged above the metal plate; in the second state, the bottom layer of the structural unit is a complete metal plate for total reflection, and a dielectric substrate, a resistor and excited solid-state plasma resonance units 1, 2, 3, 4, 5, 6, 7, 8, 9, 10, 13 and 14 are arranged above the metal plate; in the third state, the bottom layer of the structural unit is a complete metal plate for total reflection, and a dielectric substrate, a resistor and excited solid-state plasma resonance units 1, 2, 3, 4, 5, 6, 7, 8, 9, 11, 12, 13 and 14 are arranged above the metal plate; and in the state IV, the bottom layer of the structural unit is a complete metal plate for total reflection, and a dielectric substrate, a resistor and all excited solid-state plasma resonance units are arranged above the metal plate.
In the ultra-wideband wave absorber, solid plasma resonance units on a medium substrate are respectively cut into two parts by square rings with the side length of 2.5mm, 7mm and 8mm, upper-layer solid plasma resonance units in the medium substrate are respectively cut into three parts by equilateral triangular rings with the side length of 6.9mm and the width of 10.9mm of 0.1mm, the side length of each branch of a lower-layer Y-shaped solid plasma resonance unit in the medium substrate is 6.4mm, the width of each branch is 0.1mm, the height of a solid plasma cone connected between the Y-shaped solid plasma resonance unit and the upper-layer triangular ring resonance unit is 1.4mm, the radius of the solid plasma cone is 0.2857mm, and the height of the solid plasma cone connected between the Y-shaped plasma resonance unit and a bottom reflecting plate is 0.1mm and the radius of the solid plasma cone connected between the Y-shaped plasma resonance unit and the bottom reflecting plate is 0.2857 mm. The relevant parameters of the resonant cells are shown in table 1.
TABLE 1 relevant parameters of the resonant cells
| Parameter(s) | a | b | c | d |
| Value of parameter (mm) | 0.1 | 0.1 | 7.9 | 10.9 |
| Parameter(s) | r | s | t | l |
| Value of parameter (mm) | 0.2857 | 0.2 | 0.5 | 12 |
| Parameter(s) | e | f | g | p |
| Value of parameter (mm) | 2.5 | 7 | 8 | 0.0438 |
| Parameter(s) | h | w | h 1 | q |
| Value of parameter (mm) | 3.2 | 0.2 | 1.3562 | 0.1 |
| Parameter(s) | R 1 | R 2 | R 3 | |
| Value of parameter (Ω) | 570 | 800 | 500 |
As shown in FIG. 10, FIG. 11, FIG. 12 and FIG. 13, the absorption curves of the wave absorber in four states are the absorption curves obtained in TE mode, since the wave absorber is sensitive to the polarization of the incident electromagnetic wave, and the absorption curves in the following four states are the absorption curves obtained in TE mode, the electromagnetic wave is absorbed along the wave-absorbing material during operationzThe direction is incident. From the formula of absorption rateA(ω)=1-R(ω)-T(ω)，R(ω) The reflection rate is represented by the reflection rate,T(ω) Indicates the transmittance due toThe layers being integral metal reflectors, soT(ω) Not less than 0, thereforeA(ω)=1-R(ω). Fig. 10 is an absorption curve of the Y-type solid-state plasmon resonance unit when the Y-type solid-state plasmon resonance unit is not connected to the upper layer resonance unit in the dielectric substrate through the plasmon cone (the resonance units 1, 2, 3, 4, 5, 6, 7, 8, 9, 13, 14 are excited), and the ultra-wideband absorption is achieved with a reflectivity of less than-10 dB in a frequency band from 7.13GHz to 15.96GHz, an absorption rate of more than 90%, and a relative bandwidth of 76.48%. And has two higher absorption peaks at 8.17GHz and 14.64GHz respectively, and the absorption rates are 96.52% and 99.98% respectively. Fig. 11 is an absorption curve of a Y-type solid state plasma resonance unit when the Y-type solid state plasma resonance unit is connected to an upper layer solid state plasma resonance unit in a dielectric substrate through a plasma cone (the solid state plasma resonance units 1, 2, 3, 4, 5, 6, 7, 8, 9, 10, 13, 14 are excited), the reflectivity in a frequency band from 7.27GHz to 15.95GHz is lower than-10 dB, the absorptivity is higher than 90%, the relative bandwidth reaches 74.76%, two higher absorption peaks are respectively located at 8.38GHz and 14.6GHz, and the absorptivity is respectively 95.82% and 99.98%. Fig. 12 is an absorption curve of a Y-type solid state plasma resonance unit when connected to an upper layer solid state plasma resonance unit in a dielectric substrate through two plasma cones (the resonance units 1, 2, 3, 4, 5, 6, 7, 8, 9, 11, 12, 13, 14 are excited), which has a reflectivity of less than-10 dB in a frequency band of 7.69GHz to 16.08GHz, an absorption rate of more than 90%, a relative bandwidth of 70.59%, two higher absorption peaks at 9.32GHz and 14.58GHz, respectively, and absorption rates of 96.02% and 99.97%, respectively. Fig. 13 is an absorption curve of the Y-type solid state plasma resonance unit when it is connected to the upper solid state plasma resonance unit through three plasma columns (the solid state plasma resonance units 1, 2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14 are excited), which has a reflectivity of less than-10 dB in the frequency band of 8.1GHz to 16.07GHz, an absorption rate of more than 90%, a relative bandwidth of 65.94%, two higher absorption peaks at 9.425GHz and 14.57GHz, respectively, and absorption rates of 95.72% and 99.98%, respectively. Therefore, the excitation area of the resonant unit formed by the solid plasma can be controlled in a programming mode, and different plasma resonant units can be selectively excitedTherefore, the aim of dynamically regulating and controlling the suction filter is fulfilled.
As shown in fig. 14, the curves are absorption curves when the solid-state plasmon resonance units 1, 2, 3, 4, 5, 6, 7, 8, 9, 10, 13, 14 are excited; the second curve is an absorption curve when the width of the outer triangular ring-shaped solid-state plasma resonance unit (the width of the solid-state plasma resonance units 4, 5 and 6) is changed. As can be seen from FIG. 14, the absorption characteristics of the wave absorbing device after modification have changed significantly. The absorption curve moves towards the low-frequency direction, the reflectivity in a frequency band of 7.7GHz-12.07GHz and a frequency band of 14.05-16.46GHz is lower than-10 dB, and the absorptivity is higher than 90%, obviously, the absorption curve can move by changing the appearance of the solid plasma resonance unit, so that the purpose that the absorption peak covers a plurality of electromagnetic wave bands is achieved, and the programming regulation and control of the working frequency and the performance of the wave absorber are realized.
After specific design (programming control), the working frequency of the invention can realize dynamic regulation and control and can cover a plurality of electromagnetic wave bands. The main absorption is caused by a resonance unit formed by solid plasma and a loaded resistor together, and the ultra-wideband absorption of electromagnetic waves can be realized under a smaller physical size.
In addition to the above embodiments, the present invention may have other embodiments. All technical solutions formed by adopting equivalent substitutions or equivalent transformations fall within the protection scope of the claims of the present invention.
Claims (8)
1. The tunable ultra-wideband wave absorber with the multilayer support structure comprises a reflecting plate and a dielectric substrate arranged above the reflecting plate, and is characterized in that: solid plasma resonance units are respectively arranged in the dielectric substrate and on the surface of the dielectric substrate; the solid plasma resonance unit positioned in the medium substrate is provided with two layers, the solid plasma resonance unit on the upper layer is connected with the solid plasma resonance unit on the lower layer through a first solid plasma cone, and the solid plasma resonance unit on the lower layer is connected with the bottom reflecting plate through a second solid plasma cone;
the solid plasma is realized by an array consisting of PIN units, and isolation layers are arranged among the PIN units for isolation; each solid plasma resonance unit is excited by being connected with a plasma excitation source, and the on-off of each plasma excitation source is controlled by a programming control logic array;
the solid plasma resonance unit positioned on the surface of the dielectric substrate is in a square ring shape and consists of three discrete square ring-shaped solid plasma resonance units with openings, and the two outer square ring-shaped plasma resonance units with the openings are connected through a resistor;
the upper layer solid plasma resonance unit positioned in the medium substrate is formed by two groups of equilateral triangle rings, an opening is arranged along the midpoint of each side line of the two groups of equilateral triangle rings, the two groups of equilateral triangle ring solid plasma resonance units are cut into three parts through the openings, and the three parts are connected through resistors;
the lower layer solid plasma resonance unit is Y-shaped, three branches of the lower layer solid plasma resonance unit are distributed along the symmetrical axis of the equilateral triangle ring by taking the center of the equilateral triangle ring as an endpoint, and two endpoints of the lower layer solid plasma resonance unit are respectively connected with the upper layer solid plasma resonance unit through the first solid plasma cone.
2. The tunable ultra-wideband notch filter of multilayer support structure of claim 1, wherein: the side lengths of the square annular solid plasma resonance units are respectively 2.5mm, 7mm and 8mm from inside to outside.
3. The tunable ultra-wideband notch filter of multilayer support structure of claim 1, wherein: the side lengths of the two groups of equilateral triangle annular solid plasma resonance units are respectively 6.9mm and 10.9mm, and the widths of the two groups of equilateral triangle annular solid plasma resonance units are respectively 0.1 mm.
4. The tunable ultra-wideband notch filter of multilayer support structure of claim 1, wherein: the side length of each branch of the Y-shaped solid plasma resonance unit is 6.4mm, and the width of each branch of the Y-shaped solid plasma resonance unit is 0.1 mm.
5. The tunable ultra-wideband notch filter of multilayer support structure of claim 1, wherein: the height of each first solid plasma cone is 1.4mm, and the radius of the bottom surface is 0.2857 mm; the second solid state plasma cone has a height of 0.1mm and a radius of 0.2857 mm.
6. The tunable ultra-wideband notch filter of multilayer support structure of claim 1, wherein: each solid plasma resonance structure is respectively connected with a plasma excitation source and excited by loading bias voltage at two ends of the plasma excitation source; by an array of PIN cells exciting a solid plasma.
7. The tunable ultra-wideband notch filter of multilayer support structure of claim 1, wherein: the reflecting plate is made of different materials in different frequency bands; in the microwave frequency band, the reflecting plate adopts a complete metal reflecting plate, and in the frequency bands of terahertz and light waves, the reflecting plate adopts a multilayer dielectric reflecting plate or an artificial structure array with reflecting characteristics.
8. The tunable ultra-wideband notch filter of multilayer support structure of claim 1, wherein: the dielectric substrate is FR-4 having a loss tangent.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810194060.XA CN108183341B (en) | 2018-03-09 | 2018-03-09 | Tunable ultra-wideband wave absorber with multilayer support structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810194060.XA CN108183341B (en) | 2018-03-09 | 2018-03-09 | Tunable ultra-wideband wave absorber with multilayer support structure |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN108183341A CN108183341A (en) | 2018-06-19 |
| CN108183341B true CN108183341B (en) | 2020-08-14 |
Family
ID=62553381
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201810194060.XA Active CN108183341B (en) | 2018-03-09 | 2018-03-09 | Tunable ultra-wideband wave absorber with multilayer support structure |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN108183341B (en) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108901194A (en) * | 2018-08-14 | 2018-11-27 | 桂林电子科技大学 | A kind of Novel ultra wide band wave absorbing device |
| CN109286079B (en) * | 2018-09-11 | 2021-07-02 | 南京邮电大学 | Ultra-wideband polarization converter based on solid-state plasma |
| CN109489485B (en) * | 2018-11-28 | 2024-02-09 | 浙江大学 | Self-adaptive super-surface electromagnetic stealth clothing system and working method thereof |
| CN110165419B (en) * | 2019-05-21 | 2021-03-02 | 南京邮电大学 | Tunable unidirectional absorption wave absorber based on high-temperature superconductor |
| CN112817073B (en) * | 2020-12-31 | 2022-02-01 | 南京航空航天大学 | Infrared wave absorbing device based on principle of non-reflection filter |
| CN114204279B (en) * | 2021-12-14 | 2022-08-26 | 中南大学 | Resistance loading quad ring ultra wide band absorbing structure |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105161842B (en) * | 2015-10-15 | 2017-12-15 | 厦门大学 | The low elevation angle high-gain Big Dipper multifrequency microstrip antenna of sweatshirt type opening tuning ring |
| CN106847903A (en) * | 2016-12-20 | 2017-06-13 | 西安科锐盛创新科技有限公司 | For the preparation method of the heterogeneous SPiN diodes of SiGe bases of restructural loop aerial |
-
2018
- 2018-03-09 CN CN201810194060.XA patent/CN108183341B/en active Active
Also Published As
| Publication number | Publication date |
|---|---|
| CN108183341A (en) | 2018-06-19 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN108183341B (en) | Tunable ultra-wideband wave absorber with multilayer support structure | |
| CN108183339B (en) | Plasma metamaterial tunable ultra-wideband wave absorber with multilayer structure | |
| CN111276803B (en) | Super-surface-based high-gain low-scattering reconfigurable dual-frequency Fabry-Perot antenna and frequency modulation method thereof | |
| KR102027714B1 (en) | Metamaterial-Based Transmit Arrays for Multibeam Antenna Array Assemblies | |
| CN108183337B (en) | Wide-angle insensitive plasma metamaterial broadband wave absorber | |
| CN107978870B (en) | Narrow-band wave absorber based on plasma metamaterial regulation and control | |
| US20040263420A1 (en) | Pixelized frequency selective surfaces for reconfigurable artificial magnetically conducting ground planes | |
| CN106684548A (en) | Low profile broadband high gain filter antenna | |
| CN112928491B (en) | Ultra-wideband wave-absorbing dual-polarized switchable anti-absorption integrated material | |
| CN106299628B (en) | Antenna and wireless router | |
| JP6958748B2 (en) | Phase control device, antenna system and phase control method | |
| CN109088171B (en) | Wave absorber with broadened bandwidth based on cavity resonance and lumped element | |
| CN110474163B (en) | Frequency agile resonant cavity antenna | |
| CN100524941C (en) | Three-frequency bad high-performance frequency selection surface based on adjacent unit micro interference | |
| CN108183338B (en) | Crown-shaped adjustable plasma metamaterial broadband wave absorber | |
| CN107946775B (en) | Honeycomb-type-distribution adjustable plasma metamaterial narrow-band wave absorber | |
| Ramaccia et al. | Inductive tri-band double element FSS for space applications | |
| CN113285233B (en) | F-P cavity antenna based on dielectric-based metamaterial and electronic equipment | |
| CN114243268A (en) | Vibrator unit and base station antenna | |
| CN111817010B (en) | Reflecting band switchable three-dimensional broadband absorption type frequency selection structure | |
| CN111786120A (en) | Miniaturized frequency selective surface structure with rectangular coefficient close to 1 | |
| CN116780190A (en) | Broadband dielectric resonator omnidirectional antenna with stable radiation elevation angle | |
| CN101286584A (en) | Novel bilateral frequency selecting surface having sudden drop characteristic | |
| CN116130977A (en) | Active super-surface-based continuously adjustable ultra-wideband wave absorbing structure and control method | |
| Kretly et al. | The influence of the height variation on the frequency bandgap in an amc, artificial magnetic conductor, for wireless applications: an em experimental design approach |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |