CN214429469U - Simple and practical PVD coating power module - Google Patents
Simple and practical PVD coating power module Download PDFInfo
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- CN214429469U CN214429469U CN202023078423.5U CN202023078423U CN214429469U CN 214429469 U CN214429469 U CN 214429469U CN 202023078423 U CN202023078423 U CN 202023078423U CN 214429469 U CN214429469 U CN 214429469U
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- 239000011248 coating agent Substances 0.000 title claims abstract description 12
- 238000000576 coating method Methods 0.000 title claims abstract description 12
- 238000001771 vacuum deposition Methods 0.000 claims abstract description 18
- 238000005240 physical vapour deposition Methods 0.000 claims abstract description 11
- 238000001914 filtration Methods 0.000 claims description 16
- 238000002955 isolation Methods 0.000 claims description 12
- 230000008878 coupling Effects 0.000 claims description 11
- 238000010168 coupling process Methods 0.000 claims description 11
- 238000005859 coupling reaction Methods 0.000 claims description 11
- 230000003287 optical effect Effects 0.000 claims description 11
- 239000003990 capacitor Substances 0.000 claims description 8
- 230000010363 phase shift Effects 0.000 claims description 8
- 230000002093 peripheral effect Effects 0.000 claims description 6
- 238000001755 magnetron sputter deposition Methods 0.000 abstract description 15
- 230000008034 disappearance Effects 0.000 abstract description 5
- 231100000572 poisoning Toxicity 0.000 abstract description 5
- 230000000607 poisoning effect Effects 0.000 abstract description 5
- 230000000630 rising effect Effects 0.000 abstract description 2
- 238000000034 method Methods 0.000 description 12
- 230000008569 process Effects 0.000 description 8
- 239000013077 target material Substances 0.000 description 6
- 238000010586 diagram Methods 0.000 description 3
- 238000004146 energy storage Methods 0.000 description 3
- 238000005070 sampling Methods 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- 230000008859 change Effects 0.000 description 2
- 230000003472 neutralizing effect Effects 0.000 description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical group [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 1
- 230000002159 abnormal effect Effects 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 230000001143 conditioned effect Effects 0.000 description 1
- 230000003750 conditioning effect Effects 0.000 description 1
- 238000011217 control strategy Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000006386 neutralization reaction Methods 0.000 description 1
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Abstract
The utility model discloses a simple and practical PVD coating film power module can accurate control output, can provide a positive pulse at the rising edge of undershoot, and the size and the width of positive pulse are adjustable. The utility model discloses a three-phase rectification and filter circuit output end connects phase-shifting contravariant full bridge circuit, and phase-shifting contravariant full bridge circuit is received single-phase rectifier circuit behind high-frequency transformer, and single-phase rectifier circuit connects the reverse polarity circuit behind filter circuit, chopper circuit in proper order; the chopper circuit is connected with the protection circuit, the output end of the protection circuit is connected with the control circuit, and the output end of the reversed polarity circuit is connected with the vacuum coating load. The utility model discloses effectively solved the problem that high-power high density magnetron sputtering power control accuracy is low, reduced the probability of real empty room striking sparks, restrained arc target poisoning and positive pole disappearance problem.
Description
Technical Field
The utility model relates to a power supply unit especially relates to a power supply unit based on vacuum magnetron sputtering process.
Background
The research on PVD coating plasma power supply is mature at home and abroad, but some problems to be solved still exist. Such as the problems of vacuum chamber ignition, cathode poisoning, anode disappearance, low power linear regulation precision and the like.
The magnetron sputtering process requires a magnetron sputtering power supply to quickly ionize working gas to form stable plasma, and form stable incident ion flow on the surface of a target material. The magnetron sputtering power supply is divided into a direct current power supply and a pulse power supply. The problems of target poisoning, anode disappearance, discharge arcing and the like easily occur when the direct current power supply is used for preparing the film. The pulse power supply is divided into a unipolar pulse power supply and a bipolar pulse power supply, and the waveform of the output pulse voltage is approximate to a rectangular wave. Generally, the positive electrode of a power supply is connected with a vacuum chamber shell and is connected to the ground; the negative pole of the power supply is connected with the magnetic control target, in one period, the positive voltage of the unidirectional pulse power supply is zero, the sputtering deposition only occurs in the negative voltage, and the neutralization effect of the surface charge of the target material is not ideal when the voltage is zero; when the bipolar power supply is under negative voltage, the power supply voltage is used for sputtering the target material; when the positive voltage is applied, electrons are introduced to clean the surface of the target material and neutralize positive charges accumulated on the surface of the target material, so that the accumulation and arcing of the charges in the film deposition process can be effectively overcome, and the problems of cathode poisoning, anode disappearance and the like are effectively solved. At present, the number of professional manufacturers for developing plasma power supplies in China is small, the number of manufacturers for producing pulse magnetron sputtering power supplies is less, and the manufacturers are mostly direct current power supplies and unipolar pulse magnetron sputtering power supplies. The two solutions of the bipolar pulse magnetron sputtering power source which can be found at present are as follows:
a bipolar pulse power model machine is developed by adopting an asymmetric pulse generator, and the requirement of a high-power high-density magnetron sputtering process cannot be met due to low output voltage.
A network circuit structure topology is formed by bridge type pulses, and bipolar pulses with the highest voltage amplitude of 800V alternating positive and negative are generated on a vacuum coating load. The method has the advantages of complex circuit structure, inconvenience for industrialization, symmetrical positive and negative pulses, suitability for specific targets only and narrow application range. As previously mentioned, the positive voltage assumes the task of introducing electrons and neutralizing the positive charge accumulated on the target surface, thereby cleaning the target surface and reducing arcing, and does not require the same energy as the negative electrode assuming the sputter deposition function. Therefore, the voltage waveform required for the vacuum magnetron sputtering process should be asymmetric bipolar, with the magnitude and duration of the positive voltage being much smaller than the magnitude and duration of the negative voltage.
SUMMERY OF THE UTILITY MODEL
The utility model aims at overcoming prior art's shortcoming, can accurate control output, can provide a positive pulse at the rising edge of undershoot, the size and the width of positive pulse are adjustable, have effectively solved the problem that high-power high density magnetron sputtering power control precision is low, have reduced the probability of real empty room striking sparks, have restrained the poisoning of arc target and positive pole disappearance problem.
In order to achieve the above purpose, the utility model discloses a simple and practical PVD coating power module adopts following technical scheme:
a simple and practical PVD coating power supply module comprises a three-phase rectifying and filtering circuit, wherein the input end of the three-phase rectifying and filtering circuit is connected with a three-phase alternating current input, the output end of the three-phase rectifying and filtering circuit is connected with a phase-shifting inversion full-bridge circuit, the phase-shifting inversion full-bridge circuit is connected to a single-phase rectifying circuit after passing through a high-frequency transformer, and the single-phase rectifying circuit is connected with a reverse polarity circuit after sequentially passing through a filtering circuit and a chopper circuit;
the chopper circuit is connected with the protection circuit, the output end of the protection circuit is connected with the control circuit, the input end of the control circuit is connected with the single-phase rectification circuit and the filter circuit, the output end of the control circuit is connected with the phase-shifting inversion full-bridge circuit, and the output end of the reversed-polarity circuit is connected with the vacuum coating load.
Furthermore, diodes D1, D2, D3, D6, D7 and D8 of the three-phase rectification and filtering circuit form a bridge arm circuit, and one diagonal of the bridge arm is connected with a polar capacitor C2; IGBT tubes Q4, Q5, Q7 and Q8 in the phase-shift inverter full-bridge circuit form a full-bridge phase-shift circuit, one diagonal of the bridge is connected to a three-phase alternating current input after passing through a three-phase rectifying and filtering circuit, and the other diagonal of the bridge is connected to a high-frequency transformer T1.
Furthermore, diodes D4, D5, D9 and D10 in the single-phase rectification circuit form a single-phase rectification circuit bridge, diodes D4, D5, D9 and D10 form a bridge arm circuit, one diagonal of the bridge arm is connected with the high-frequency transformer T1, and the other diagonal of the bridge arm is connected with the filter circuit; a filter inductor L1 and a filter capacitor C1 in the filter circuit form a low-pass filter circuit, and the single-phase rectifier circuit and the filter circuit are connected to a phase modulation circuit and an AD interface of the DSP control board.
Furthermore, a collector C of an IGBT (insulated gate bipolar transistor) Q3 of the chopper circuit is connected with the filter circuit, a gate G of the IGBT Q3 is connected with the N2 optical coupling isolation driving circuit, an emitter E of the IGBT Q3 is connected to an inductor L2 in the reverse polarity circuit through the anode and the cathode of a diode D12, and the other end of the inductor L2 is connected to the collector C of the IGBT Q6; the reverse polarity circuit is composed of an inductor L2 and an IGBT tube Q6, the inductor L2 is connected to the positive pole OUT + of the output, the emitter E of the IGBT tube Q6 is connected to the negative pole OUT-of the output, and the gate G of the IGBT tube Q6 is connected with the N3 high-speed optical coupling isolation driving circuit.
Furthermore, the control circuit consists of a DSP control board and a peripheral circuit thereof, a PWM output interface of the DSP control board is connected to an IGBT tube Q6 gate G of the reverse polarity circuit after passing through a comparator U1A and an N3 high-speed optical coupling isolation driving circuit; a pin 3 of a comparison amplifier U6A is connected to a positive voltage OUT + end of a vacuum coating load through resistors R16, R17 and R18, a pin 2 of the comparison amplifier U6A is connected to a negative voltage OUT-end of the vacuum coating load through resistors R21, R22 and R23, and an output end of the comparison amplifier U6A is connected to a phase modulation circuit and an AD interface of a DSP control board through a resistor R20; the high-speed serial port of the DSP control panel is connected with an upper computer.
Further, the protection circuit is composed of amplifiers U4A, U5A and peripheral circuits thereof, a pin 2 of the amplifier U4A is connected to an inductor L2 of a reverse polarity circuit through a resistor R8 and a pin 2 of the amplifier U5A through a resistor R15, an output end of a pin 1 of the amplifier U5A is connected to a phase modulation circuit and an AD interface of a DSP control board, a pin 1 of the amplifier U4A is connected to a PWM output interface and an interrupt interface of an N2 optical coupling isolation driving circuit and the DSP control board through a coupler U3, and the PWM output interface and the interrupt interface are connected to a pin 2 of a comparator U1A.
The utility model discloses it is low to the linear regulation precision of output power, and the easy scheduling problem that arcs of real empty room has proposed a high accuracy asymmetric bipolar pulse power supply based on phase shift full-bridge control algorithm, the characteristics design of cooperation inductance energy storage on the basis of the detailed study vacuum magnetron sputtering process. The power supply improves the power control precision by utilizing the characteristic of high power control precision of the phase-shifted full-bridge circuit; by utilizing the characteristic that the inductor always hinders the current change, the circuit is reasonably designed, a positive voltage is generated at the end of the negative pulse, and the magnitude of the positive voltage can be adjusted by changing the magnitude of the inductance value. Positive voltage is used for attracting electrons and neutralizing positive charges accumulated on the surface of the target material, so that the probability of arcing of the vacuum chamber is effectively reduced, and the high-power high-density magnetron sputtering process can be met; the circuit structure is simple, and industrialization is convenient to realize.
The utility model discloses can accurate control output, can provide a positive pulse at the falling edge of undershoot, the size and the width of positive pulse are adjustable, have effectively solved high-power high density magnetron sputtering power control precision low, have reduced the probability that real empty room struck sparks, have restrained that the arc target is poisoned and the positive pole disappears the problem.
Drawings
Fig. 1 is a schematic block diagram of a circuit according to an embodiment of the present invention;
fig. 2 is a circuit diagram of an embodiment of the present invention.
The reference numerals are explained below:
the device comprises a three-phase rectifying and filtering circuit 11, a phase-shifting inverter full-bridge circuit 12, a high-frequency transformer T1, a single-phase rectifying circuit 14, a filtering circuit 15, a chopper circuit 16, a reverse polarity circuit 17, a control circuit 18, a protection circuit 19 and a vacuum coating load 10.
Detailed Description
To further understand the features and technical means of the present invention, and the specific purpose and function achieved, the advantages and spirit of the present invention are further understood by the following detailed description of the present invention with reference to the accompanying drawings.
The invention is a functional block diagram, referring to fig. 1, this embodiment provides a high-precision asymmetric bipolar pulse power supply based on a phase-shifted full bridge and an energy-storage inductor, the main circuit comprises a three-phase rectifying and filtering circuit 11, the input end of the three-phase rectifying and filtering circuit 11 is connected with a three-phase alternating current input, the output end of the three-phase rectifying and filtering circuit 11 is connected with a phase-shifted inverting full bridge circuit 12, the phase-shifted inverting full bridge circuit 12 is connected with a single-phase rectifying circuit 14 after passing through a high-frequency transformer T1, the single-phase rectifying circuit 14 is connected with a reverse polarity circuit 17 after sequentially passing through a filtering circuit 15 and a chopping circuit 16, the chopping circuit 16 is connected with a protection circuit 19, the output end of the protection circuit 19 is connected with a control circuit 18, the input end of the control circuit 18 is connected with the single-phase rectifying circuit 14, the output ends of the filter circuit 15 and the control circuit 18 are connected with the phase-shift inverter full-bridge circuit 12 and the chopper circuit 16, and the output end of the reversed polarity circuit 17 is connected with the vacuum coating load 10.
As shown in fig. 2, diodes D1, D2, D3, D6, D7 and D8 of the three-phase rectifying and filtering circuit 11 form a bridge arm circuit, and one diagonal of the bridge arm is connected with a polar capacitor C2; the polar capacitor C2 stores and filters the rectified electric energy, and the input three-phase electric energy is rectified into direct current.
In some embodiments, the IGBT transistors Q4, Q5, Q7, and Q8 in the phase-shifted inverter full bridge circuit 12 form a full bridge phase-shifted circuit, one diagonal of the bridge is connected to the three-phase ac input through the three-phase rectifying and filtering circuit 11, and the other diagonal of the bridge is connected to the primary side of the high-frequency transformer T1.
The phase-shift inverter full bridge circuit 12 inverts the direct current into a high frequency alternating current. And adjusting the inversion frequency and the phase shift angle in real time according to the set and feedback signals, and accurately controlling the output power in real time. The high frequency transformer T1 transforms the input voltage to a desired voltage.
Diodes D4, D5, D9, and D10 in the single-phase rectifier circuit 14 form a single-phase rectifier circuit bridge, and convert the boosted alternating current into direct current; the diodes D4, D5, D9 and D10 form a bridge arm circuit, one diagonal of the bridge arm is connected with the secondary side of the high-frequency transformer T1, and the other diagonal of the bridge arm is connected with the filter circuit 15.
In some embodiments, the filter inductor L1 and the filter capacitor C1 in the filter circuit 15 form a low-pass filter circuit to filter out high-frequency noise, and an LC filter circuit (consisting of the filter inductor L1 and the filter capacitor C1) is used to filter out ac components and obtain clean dc; the single-phase rectification circuit 14 and the filter circuit 15 are connected to a phase modulation circuit and an AD interface of the DSP control board.
The collector C of an IGBT tube Q3 of the chopper circuit 16 is connected with the filter circuit 15, the gate G of a GBT tube Q3 is connected with the N2 optical coupling isolation driving circuit, the emitter E of the IGBT tube Q3 is connected with an inductor L2 in the reverse polarity circuit 17 through the anode and the cathode of a diode D12, and the other end of the inductor L2 is connected with the collector C of the IGBT tube Q6. The chopper circuit 16 chops the direct current into a pulse wave.
The reverse polarity circuit 17 comprises an inductor L2 and an IGBT tube Q6, an emitter E of the IGBT tube Q6 is connected to a negative voltage OUT-end of the vacuum coating load 10 (the emitter E of the IGBT tube Q6 is connected to an output negative electrode OUT-), a collector C of the IGBT tube Q6 is connected to a positive voltage OUT + end of the vacuum coating load 10 through an inductor L2, an inductor L2 is connected to an output positive electrode OUT +, and a gate G of the IGBT tube Q6 is connected with the N3 high-speed optical coupling isolation driving circuit.
In a period of time before the IGBT tube Q3 of the chopper circuit 16 is turned off, the IGBT tube Q6 of the reverse polarity circuit 17 is turned on to charge the inductor L2; after the IGBT Q3 of the chopper circuit 16 is turned off for a certain period of time and before the next pulse of the chopper circuit 16 comes, the IGBT Q6 of the reverse polarity circuit 17 is turned off.
In some embodiments, the control circuit 18 is composed of a DSP control board and its peripheral circuits, the signal sampling circuit samples the output voltage and current in real time, and sends them to the control circuit 18 after being conditioned to proper values by the signal conditioning circuit, and the control circuit 18 calculates the frequency and pulse width of the PWM of the IGBTs in the main power circuit and the reverse polarity circuit 17 according to the feedback signal to control the magnitude and pulse width of the power output power and reverse polarity voltage of the next cycle. And a PWM output interface of the DSP control board is connected to an IGBT tube Q6 gate G of the reverse polarity circuit 17 after passing through a high-speed optical coupling isolation driving circuit of a comparator U1A and an N3. The output voltage of the reversed polarity circuit 17 to the vacuum coating load 10 leads out a sampling control signal, and the sampling control signal is amplified and shaped by a comparison amplifier U6A of the control circuit 18 to obtain a driving signal output by PWM.
The pin 3 of the comparison amplifier U6A is connected to the positive voltage OUT + end of the vacuum coating load 10 through resistors R16, R17 and R18, the pin 2 of the comparison amplifier U6A is connected to the negative voltage OUT-end of the vacuum coating load 10 through resistors R21, R22 and R23, and the output end of the comparison amplifier U6A is connected to the phase modulation circuit and the AD interface of the DSP control board through a resistor R20. The high-speed serial port of the DSP control panel is connected with an upper computer.
The protection circuit 19 is composed of amplifiers U4A, U5A and peripheral circuits thereof, a pin 2 of the amplifier U4A is connected to the cathode of a diode D12 and the inductor L2 of the reverse polarity circuit 17 through a resistor R8 and a pin 2 of the amplifier U5A and a resistor R15, and is connected to the emitter E of an IGBT tube Q3 through the cathode-anode of a diode D12. And the pin 2 of the amplifier U4A is connected to the positive voltage OUT + end of the vacuum coating load 10 through a resistor R8 and a pin 2 of the amplifier U5A.
The output end of a pin 1 of an amplifier U5A is connected to a phase modulation circuit and an AD interface of a DSP control board, a pin 1 of an amplifier U4A is connected to a PWM output and interrupt interface of an N2 optical coupling isolation driving circuit and the DSP control board after passing through a coupler U3(U3A and U3B), and the PWM output and interrupt interface is connected to a pin 2 of a comparator U1A. The protection circuit 19 detects the output voltage and current in real time and processes the output voltage and current at high speed, so that when the vacuum coating load 10 end is abnormal, the power supply can close the IGBT within 1 mu S, the vacuum coating load 10 and the power supply can be protected, and the power supply can be protected within 1 mu S.
The variable inductance in the reverse polarity circuit can be realized by two methods:
1. a multi-output tap inductor is employed. Determining which tap is adopted in real time by detecting the magnitude of the negative voltage in real time, wherein the higher the negative voltage is, the larger the adopted inductor is; the smaller the negative voltage, the smaller the inductance employed. This method works well, but due to the tap discreteness, the tap selection cannot be matched very precisely to the positive charge accumulated in the vacuum chamber.
2. And the inductance value is adjusted by adopting an inductance iron core dynamic adjustment mode. The method can obtain a positive voltage which is more accurately matched with positive charges accumulated in the vacuum chamber, and only the magnetic core automatic adjusting circuit is slightly complicated. The driving motor is required to dynamically adjust the depth of the magnetic core inserted into the inductance coil.
In the embodiment, the DSP is adopted to generate the PWM signal, and then the motor is driven by the driving circuit and drives the actuating mechanism to move the magnetic core. The embodiment improves the control precision and the protection speed of the power supply, the current transformer samples current, the sampled current signal is input into the comparator for comparison, the output of the comparator is connected with an interrupt interface pin of the DSP control board, and the overcurrent information is sent to the upper computer after the interrupt program is processed; the total reaction transit time of this example was less than 500 nS.
The utility model discloses it is low to the linear regulation precision of output, and the scheduling problem is struck sparks easily to real empty room, proposes a characteristics based on out-of-phase control strategy cooperation inductance energy storage and has designed a novel asymmetric bipolar pulse power supply of high accuracy. The power supply effectively improves the power control precision and reduces the probability of sparking of a vacuum chamber by utilizing the characteristics of high control precision of the phase-shifted full-bridge power and incapability of sudden change of inductance energy, and can meet the requirement of a high-power high-density magnetron sputtering process; the circuit structure is simple, and industrialization is convenient to realize.
The above-mentioned embodiments only represent some embodiments of the present invention, and the description thereof is specific and detailed, but not construed as limiting the scope of the present invention. It should be noted that, for those skilled in the art, without departing from the spirit of the present invention, several variations and modifications can be made, which are within the scope of the present invention. Therefore, the protection scope of the present invention should be subject to the appended claims.
Claims (6)
1. A simple and practical PVD coating power module contains: the three-phase rectification and filter circuit is characterized in that the input end of the three-phase rectification and filter circuit is connected with a three-phase alternating current input, the output end of the three-phase rectification and filter circuit is connected with a phase-shifting inversion full-bridge circuit, the phase-shifting inversion full-bridge circuit is connected with a single-phase rectification circuit after passing through a high-frequency transformer, and the single-phase rectification circuit is connected with a reverse polarity circuit after passing through a filter circuit and a chopper circuit in sequence;
the chopper circuit is connected with the protection circuit, the output end of the protection circuit is connected with the control circuit, the input end of the control circuit is connected with the single-phase rectification circuit and the filter circuit, the output end of the control circuit is connected with the phase-shifting inversion full-bridge circuit, and the output end of the reversed-polarity circuit is connected with the vacuum coating load.
2. The PVD coating power supply module as recited in claim 1, wherein the diodes D1, D2, D3, D6, D7 and D8 of the three-phase rectifying and filtering circuit form a bridge arm circuit, and one diagonal of the bridge arm is connected with a polar capacitor C2;
IGBT tubes Q4, Q5, Q7 and Q8 in the phase-shift inverter full-bridge circuit form a full-bridge phase-shift circuit, one diagonal of the bridge is connected to a three-phase alternating current input after passing through a three-phase rectifying and filtering circuit, and the other diagonal of the bridge is connected to a high-frequency transformer T1.
3. A simple and practical PVD coating power supply module as claimed in claim 1, wherein the diodes D4, D5, D9 and D10 in the single-phase rectification circuit form a single-phase rectification circuit bridge, the diodes D4, D5, D9 and D10 form a bridge arm circuit, one diagonal of the bridge arm is connected with a high-frequency transformer T1, and the other diagonal of the bridge arm is connected with a filter circuit;
a filter inductor L1 and a filter capacitor C1 in the filter circuit form a low-pass filter circuit, and the single-phase rectifier circuit and the filter circuit are connected to a phase modulation circuit and an AD interface of the DSP control board.
4. The PVD coating power module as recited in claim 1, wherein a collector C of an IGBT tube Q3 of the chopper circuit is connected with a filter circuit, a gate G of an IGBT tube Q3 is connected with an N2 optically-coupled isolation driving circuit, an emitter E of the IGBT tube Q3 is connected to an inductor L2 in a reverse polarity circuit through a diode D12 from positive to negative, and the other end of the inductor L2 is connected to the collector C of the IGBT tube Q6;
the reverse polarity circuit is composed of an inductor L2 and an IGBT tube Q6, the inductor L2 is connected to the positive pole OUT + of the output, the emitter E of the IGBT tube Q6 is connected to the negative pole OUT-of the output, and the gate G of the IGBT tube Q6 is connected with the N3 high-speed optical coupling isolation driving circuit.
5. The simple and practical PVD coating power module as claimed in claim 1, wherein the control circuit is composed of a DSP control board and peripheral circuits thereof, a PWM output interface of the DSP control board is connected to an IGBT tube Q6 gate G of a reverse polarity circuit after passing through a comparator U1A and an N3 high-speed optical coupling isolation driving circuit; a pin 3 of a comparison amplifier U6A is connected to a positive voltage OUT + end of a vacuum coating load through resistors R16, R17 and R18, a pin 2 of the comparison amplifier U6A is connected to a negative voltage OUT-end of the vacuum coating load through resistors R21, R22 and R23, and an output end of the comparison amplifier U6A is connected to a phase modulation circuit and an AD interface of a DSP control board through a resistor R20; the high-speed serial port of the DSP control panel is connected with an upper computer.
6. The PVD coating power supply module as claimed in claim 1, wherein the protection circuit comprises amplifiers U4A, U5A and their peripheral circuits, pin 2 of amplifier U4A is connected to inductor L2 of reversed polarity circuit through resistor R8 and amplifier U5A through resistor R15, pin 1 of amplifier U5A is connected to phase modulation circuit and AD interface of DSP control board, pin 1 of amplifier U4A is connected to PWM output and interrupt interface of N2 optical coupling isolation driving circuit and DSP control board through coupler U3, and PWM output and interrupt interface are connected to pin 2 of comparator U1A.
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| Application Number | Priority Date | Filing Date | Title |
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| CN202023078423.5U CN214429469U (en) | 2020-12-20 | 2020-12-20 | Simple and practical PVD coating power module |
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| CN202023078423.5U CN214429469U (en) | 2020-12-20 | 2020-12-20 | Simple and practical PVD coating power module |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114438465A (en) * | 2022-02-18 | 2022-05-06 | 中国工程物理研究院流体物理研究所 | Quick response power protection circuit for high-power pulse magnetron sputtering load arcing |
| CN114481071A (en) * | 2022-02-11 | 2022-05-13 | 松山湖材料实验室 | Film coating device and DLC film coating process |
-
2020
- 2020-12-20 CN CN202023078423.5U patent/CN214429469U/en active Active
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114481071A (en) * | 2022-02-11 | 2022-05-13 | 松山湖材料实验室 | Film coating device and DLC film coating process |
| CN114481071B (en) * | 2022-02-11 | 2023-10-27 | 松山湖材料实验室 | Coating device and DLC coating process |
| CN114438465A (en) * | 2022-02-18 | 2022-05-06 | 中国工程物理研究院流体物理研究所 | Quick response power protection circuit for high-power pulse magnetron sputtering load arcing |
| CN114438465B (en) * | 2022-02-18 | 2023-04-21 | 中国工程物理研究院流体物理研究所 | Fast response power supply protection circuit for high-power pulse magnetron sputtering load arcing |
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