CN204442197U - A kind of pulsed sputter power supply - Google Patents
A kind of pulsed sputter power supply Download PDFInfo
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- CN204442197U CN204442197U CN201520155011.7U CN201520155011U CN204442197U CN 204442197 U CN204442197 U CN 204442197U CN 201520155011 U CN201520155011 U CN 201520155011U CN 204442197 U CN204442197 U CN 204442197U
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Abstract
A kind of pulsed sputter power supply, comprises the rectified three-phase circuit, inverter circuit, high frequency transformer, current rectifying and wave filtering circuit, the pulse generating circuit that are linked in sequence; The structure of described pulse generating circuit is: comprise switching tube V output and be connected to inductance L tap a and hold; Inductance L tap o end is connected to DC power supply circuit negative pole, and inductance L tap b end is connected with magnetic control sputtering device target, and switching tube V input and magnetic control sputtering device substrate are connected in DC power supply circuit positive pole jointly; The control end of described switching tube V is connected with pwm control circuit.The utility model solves the power supply reliability that in prior art, power switch pipe too much causes and declines, and provides a kind of pulsed sputter power supply that a kind of dynamic characteristic is good, cost is lower, it is simple and reliable to control, have energy feedback.
Description
Technical field
The present invention relates to magnetron sputtering technique field, particularly relate to a kind of pulsed sputter power supply.
Background technology
Thin film deposition is under vacuum conditions, utilizes the energetic ion bombardment target material surface in plasma, makes atom that target is shelled out or ion deposition grow into the film with specific function at matrix surface.Magnetron sputtering technique is the one of thin film deposition processes, is to utilize electromagnetic field to control the movement locus of gas anomaly glow discharge intermediate ion, electronics and the sputter coating process process of distribution situation in vacuum chamber.
The magnetron sputtering power supply of development both at home and abroad mainly contains DC sputtering power, radio frequency sputtering power supply, mid frequency sputtering power supply, the several types such as pulsed sputter power supply at present.Mid frequency sputtering, radio frequency sputtering and pulsed sputter can overcome charge accumulated in direct current sputtering process when doing reaction film and electric discharge, efficiently solve the phenomenon that target poison ing is serious, overcome the phenomenon that sputter procedure Anodic disappears.Mid frequency sputtering requires two twin targets, and sputter rate is lower than pulsed sputter, radio frequency sputtering power work frequency is at tens megahertzes, equipment cost is very high, and pulsed sputter directly can carry out on DC sputtering equipment, only need single target, sputter rate is higher than mid frequency sputtering, operating frequency is in tens KHz, and cost is significantly less than radio frequency sputtering power supply.Pulsed sputter power supply adopts the pulse power of square-wave voltage to replace Traditional DC shielding power supply to carry out thin film deposition.
Chinese patent (application number: CN201310024628) discloses a kind of high energy pulse formula magnetically controlled sputter method and magnetic control sputtering device, wherein, this high energy pulse formula magnetic control sputtering device, comprise vacuum chamber, vaccum-pumping equipment, power supply, central control unit, it is characterized in that, described power supply comprises impulse generating unit, grid bias power supply and DC power supply; Described grid bias power supply is connected on sample, described DC power supply is connected on target, described impulse generating unit is connected with central control unit by data wire, and this impulse generating unit is promoted to produce pulse current by DC power supply, and is exported in the target of vacuum chamber by this electric current.But this high energy pulse formula magnetic control sputtering device is not documented the circuit structure composition of magnetic control sputtering device, merely illustrates its operation principle, causes those skilled in the art cannot design according to its disclosure.
Xi'an University of Technology's journal (the 29th volume the 2nd phase in 2013, author: Chen Guitao etc.) disclose a kind of research of the Novel asymmetric bipolar pulse magnetron sputtering power supply based on FPGA, the document have studied the asymmetric bipolar pulse power based on FPGA, solve the common problem run in magnetron sputtering technique, obtain excellent film performance and wider processing range simultaneously.Pulse amplitude, frequency, duty ratio can be comprised according to magnetron sputtering power supply process requirements to bidirectional pulse parameter, and positive negative sense number and commutating period between direct impulse and negative-going pulse etc. free adjustment.Finally devise a 6kW/100kHz model machine, prime adopts two, and independently DC/DC converter is as DC source, and rear class is a non-symmetric pulse generator.Adopt the FPGA (EP3C25Q240C8) of altera corp to achieve the digital control of power supply as digital processing unit, realize high-freedom degree to rear class impulse transfer link simultaneously and control, interpretation of result demonstrates the feasibility of design further by experiment.But the mode that the rectangular voltage generating portion of this magnetron sputtering power supply adopts full-bridge inverting to add rectification realizes, and power switch pipe quantity is many, and power supply cost increases, and Energy control is complicated, affects power supply reliability.
Utility model content
The utility model is for the deficiencies in the prior art, provides the high-power impulse magnetron sputtering power supply that a kind of stable performance, cost are lower, have high impulse crest voltage.
The utility model is realized by the following technical programs: a kind of pulsed sputter power supply, comprises the rectified three-phase circuit, inverter circuit, high frequency transformer, current rectifying and wave filtering circuit, the pulse generating circuit that are linked in sequence; It is characterized in that: the structure of described pulse generating circuit is: comprise switching tube V output and be connected to inductance L tap a and hold; Inductance L tap o end is connected to DC power supply circuit negative pole, and inductance L tap b end is connected with magnetic control sputtering device target, and switching tube V input and magnetic control sputtering device substrate are connected in DC power supply circuit positive pole jointly; The control end of described switching tube V is connected with pwm control circuit.
Be preferably: also comprise central processing unit, drive circuit, signal acquisition module, protection module, host computer, LCD MODULE, signal input module; Described central processing unit is ARM system; Described signal acquisition module comprises voltage sampling circuit, current sampling circuit; Described protection module comprises overcurrent and short-circuit protection circuit.
Be preferably: the input of described rectified three-phase circuit is connected with air switch output; The input of described air switch connects can recover protective tube fast.
Be preferably: described drive circuit comprises the driving of driving to inverter circuit and paired pulses circuit for generating; The drive singal of described drive circuit is produced by ARM system and generates after photoelectric isolating circuit process.
Be preferably: described current sampling circuit comprises the output current sample circuit of output current to described current rectifying and wave filtering circuit and paired pulses circuit for generating.
Be preferably: described current sampling circuit comprises current sensor, described current sensor adopts Hall current sensor.
Be preferably: described voltage sampling circuit comprises the output voltage sampling circuit of output voltage to described current rectifying and wave filtering circuit and paired pulses circuit for generating.
Be preferably: described voltage sampling circuit, current sampling circuit are transferred to ARM control chip after A/D sample circuit.
Be preferably: the Signal transmissions between described host computer and ARM system is wireless transmission, be preferably 4G Internet Transmission.
Beneficial effect: the utility model solves the power supply reliability that power switch pipe too much causes in prior art and declines, provides that a kind of dynamic characteristic is good, cost is lower, control simple and reliable a kind of pulsed sputter power supply.
Accompanying drawing explanation
Accompanying drawing 1 is the utility model structural representation;
Accompanying drawing 2 is the utility model DC power supply circuit structural representation
Accompanying drawing 3 is the utility model pulse electricity-generating circuit structural representation;
Accompanying drawing 4 is the utility model voltage sampling circuit schematic diagram;
Accompanying drawing 5 is the utility model current sampling circuit schematic diagram;
Accompanying drawing 6 is the utility model short circuit over-current protection circuit schematic diagram;
Accompanying drawing 7 is the utility model voltage sample flow chart.
Embodiment
Shown in accompanying drawing 1.
A kind of pulsed sputter power supply, comprises the rectified three-phase circuit, inverter circuit, high frequency transformer, current rectifying and wave filtering circuit, the pulse generating circuit that are linked in sequence; It is characterized in that: comprise central processing unit, drive circuit, signal acquisition module, protection module, host computer, LCD MODULE, signal input module; Described central processing unit is ARM system; Described signal acquisition module comprises voltage sampling circuit, current sampling circuit; Described protection module comprises overcurrent and short-circuit protection circuit.The input of described rectified three-phase circuit is connected with air switch output; The input of described air switch connects can recover protective tube fast.Described drive circuit comprises the driving of driving to inverter circuit and paired pulses circuit for generating; The drive singal of described drive circuit is produced by ARM system and generates after photoelectric isolating circuit process.Described current sampling circuit comprises the output current sample circuit of output current to described current rectifying and wave filtering circuit and paired pulses circuit for generating.Described current sampling circuit comprises current sensor, and described current sensor adopts Hall current sensor.Described voltage sampling circuit comprises the output voltage sampling circuit of output voltage to described current rectifying and wave filtering circuit and paired pulses circuit for generating.Described voltage sampling circuit, current sampling circuit are transferred to ARM system after A/D sample circuit.Signal transmissions between described host computer and ARM system is wireless transmission, is preferably 4G Internet Transmission.The signal of described ARM system is input as input through keyboard or wireless input; Described ARM system be shown as liquid crystal display or numeral method.
Shown in accompanying drawing 2.Described rectified three-phase circuit, inverter circuit, high frequency transformer, rectifying and wave-filtering composition DC power supply circuit.Rectifier bridge D1 and filter capacitor C2 forms rectified three-phase circuit; Q1, Q2, Q3 and Q4 form inverter circuit; T1 is high frequency transformer; Rectifier bridge D2, inductance L o, electric capacity C4 form current rectifying and wave filtering circuit.Described inverter circuit switching tube Q1 and switching tube Q4, switching tube Q2 and switching tube Q3 alternate conduction and shutoff.
Three-phase 380V alternating current, after rectification circuit, is transformed to the direct current of size 540V, through inverter circuit, DC power conversion is the alternating current of 20KHZ and sends into high frequency transformer, and carry out boosting inverter, high voltagehigh frequency alternating current is transformed to direct current through rectifying and wave-filtering.
ARM system comprises ARM microcontroller: the preset and power work state display of input through keyboard, liquid crystal display primary responsibility power parameter, in addition ARM system its there is very strong communication capacity, by the communication between special purpose interface realization and outer computer, thus the upgrading of network management and software control procedure can be implemented easily.ARM system utilizes transducer to carry out the sampling of electric current, voltage signal, and electric current, voltage feedback signal are directly inputted ARM through signal transacting, by the A/D converter of ARM inside, is digital signal by the analog-signal transitions of electric current, Voltage Feedback; ARM is sent to the form of digital quantity by the Setting signal of the electric current of input through keyboard, voltage, frequency, pulse duration; ARM, according to each signal feeding value and value of feedback, carries out computing based on digital IIR filters, produces pwm pulse sequence; The pwm signal that ARM exports, by Phototube Coupling, drive circuit, controls the break-make of the device for power switching IGBT in inverter circuit and pulse generating circuit, obtains output voltage and the electric current of setting.Described ARM controller is preferably ARM8.
Shown in accompanying drawing 3.The structure of described pulse generating circuit is: comprise switching tube V output and be connected to inductance L tap a and hold, inductance L tap o end is connected to DC power supply circuit negative pole, inductance L tap b end is connected with magnetic control sputtering device target, and switching tube V input and magnetic control sputtering device substrate are connected in DC power supply circuit positive pole jointly; The control end of described switching tube V is connected with pwm control circuit; Described pwm control circuit controls conducting, the shutoff of described pulse generating circuit breaker in middle pipe after photoelectric isolating circuit, drive circuit after generating pwm control signal.The switching tube V of described pulse generating circuit is IGBT pipe.
Described DC power supply circuit is for generation of direct current, and its electric current and voltage is by pwm control circuit Inspect and control.Described pulse generating circuit is for generation of high frequency power pulse, and its frequency and duty ratio control by pwm control circuit.Described pwm control circuit, for gathering voltage and current signal, sends DC power supply circuit control signal, sends pulse generating circuit control signal.
The operation principle of described pulse generating circuit: the switching tube V of pwm control circuit control impuls circuit for generating opens and shutoff.During switching tube V shutoff, electric current flows out from DC power anode, powers to plasma, and flows back to DC power cathode through inductance L, and now inductance L polarity of voltage o holds as negative, b end are just, store electrical energy; Because target material surface accumulation positive charge causes plasma load to show capacitive properties, its polarity is upper just lower negative, during switching tube V conducting, now inductance L plays transformer action, and a end and o end are inputs, b end and a end are outputs, a end and b end are Same Name of Ends, a end of inductance L and o termination DC power supply circuit, and a end is higher than o terminal potential therefore b terminal potential is higher than a terminal potential, now inductance L is to plasma load reverse charging, in and target material surface stored charge; When switching tube V turns off again, there is inner circulation in inductance L, makes inductive current rapid equalisation.Inductance L has the double action of inductance and transformer, successively completes energy storage and transferring energy.Regulate the position that the centre cap a of inductance L holds, adjustable reverse charging voltage.
Pwm control circuit, is made up of ARM microcontroller and peripheral protective circuit.Its function: the collection of electric current, voltage signal and computing; The generation of pulse-width signal; The protection of abnormal arc discharge; The generation of constant current, constant voltage, constant output characteristic, the generation of pulse signal and the adjustment of frequency.
In the present invention, pulsed sputter supply voltage sample circuit and current sampling circuit are see accompanying drawing 4-5, add overcurrent and short-circuit protection circuit simultaneously, shown in accompanying drawing 6.
Voltage sampling circuit schematic diagram is Figure 4 shows that see attached.Sampled voltage is after resistance R11 and R22 dividing potential drop; enter the low pass filter of inductance L 11 and electric capacity C11 composition; filtering High-frequency Interference composition; the scaling circuit that rear feeding is made up of operational amplifier OA1, resistance R13 and R14 carries out impedance transformation; rear feeding optocoupler OI carries out Phototube Coupling, then sends into operational amplifier OA2, carries out impedance transformation; last sampled voltage one tunnel is sent to the analog-to-digital conversion part of ARM, and overcurrent and short-circuit protection circuit are delivered in a road.Described operational amplifier is chosen as OP07, OP27, UA741 integrated chip; Described optocoupler is linear optical coupling, is chosen as PC817A-C integrated chip.
See current sampling circuit schematic diagram shown in accompanying drawing 5.Hall current sensor LEM.A exports sampling current value by a certain percentage; then send into the low pass filter be made up of L1 and C1; filtering High-frequency Interference composition; the voltage follower that rear feeding operational amplifier OA forms carries out impedance transformation; last sample rate current one tunnel is sent to the analog-to-digital conversion part of ARM, and overcurrent and short-circuit protection circuit are delivered in a road.Described Hall current sensor model is preferably LEM45 integration module.
See overcurrent shown in accompanying drawing 6 and short-circuit protection circuit schematic diagram.Resistance R21, R22 and R25 and voltage comparator CP1 form current comparison circuit, resistance R23, R24 and R26 and voltage comparator CP2 form voltage comparator circuit, timer integrated circuit is NE555, with R27, C22, C21 jointly form monostable circuit wherein 2 pin be trigger end, 3 pin are output.
In coating process, gas discharge proceeds to arc discharge by glow discharge, and electric current can raise rapidly, and voltage reduces rapidly, and be that coating process institute is unallowed, the present invention adopts dual comparator to realize overcurrent and short-circuit protection.Described comparison circuit is preferably LM339 chip.
When current sampling data exceedes set point (being set by R21 and R22 partial pressure value), voltage comparator CP1 output low level, NAND gate NAND exports high level; When voltage sample value also can make NAND gate NAND export high level lower than set point (being set by R23 and R24 partial pressure value).If monostable circuit, export high level single pulse signal, Phototube Coupling is sent on a road, the transmission of cut-off pwm control signal; ARM interruptive port is sent on one tunnel, and ARM performs interrupt routine, stops the output of pwm control signal.Achieve duplicate protection, reach the object, protection power source and the target that suppress rapidly arc discharge.
The utility model lay special stress on: above-mentioned pulse generating circuit, voltage sampling circuit, current sampling circuit overcurrent and short-circuit protection circuit thereof; inventor through to research and develop for many years and to pay the classical circuit that performing creative labour designs; especially pulse generating circuit especially the present inventor pay performing creative labour obtain, by the design of foregoing circuit better ensure that pulsed sputter power supply reliability, dynamic characteristic is good, cost is low, control simple and reliable, to have energy feedback advantage.
In addition, the invention also discloses a kind of pulsed sputter power control method, the method comprises primary module, man-machine interaction submodule, breakdown judge submodule, closed-loop control submodule; Described closed-loop control submodule comprises Multimode Control submodule further; Wherein, described primary module mainly completes soft start, the collection to external data, the Multimode Control submodule of closed-loop system adjuster, the work such as formation, overvoltage, overcurrent, short-circuit protection of pulse generating circuit.Primary module mainly comprises breakdown judge submodule, interrupts detection sub-module, calculating sub module.
Wherein said breakdown judge submodule judges that whether power supply is working properly, if any fault, then carries out troubleshooting, carries out by the A/D function of ARM embedded OS the value that analog-to-digital conversion and algorithm judge input and output; By Multimode Control submodule adjustment electric power output voltage electric current.
In addition, closed-loop control submodule can comprise PID control submodule or fuzzy control submodule.
Wherein Fig. 7 is the embodiment of a voltage sample subroutine flow chart.In initialization procedure, first each input port of ARM is resetted, after initialization, open interrupt routine, if there is interrupt requests, respond, otherwise carry out data acquisition and read reference value, then data place is carried out, export corresponding control, if occurred by under-voltage, overvoltage, short circuit or overcurrent condition, then carry out troubleshooting.
Set forth a lot of detail in the above description so that fully understand the utility model.But above description is only preferred embodiment of the present utility model, the present invention can be much different from alternate manner described here to implement, and therefore the utility model is not by the disclosed concrete restriction implemented above.Any those skilled in the art are not departing under technical solution of the present invention ambit simultaneously, the Method and Technology content of above-mentioned announcement all can be utilized to make many possible variations and modification to technical solutions of the utility model, or be revised as the Equivalent embodiments of equivalent variations.Every content not departing from technical solution of the present invention, according to technical spirit of the present utility model to any simple modification made for any of the above embodiments, equivalent variations and modification, all still belongs in the scope of technical solutions of the utility model protection.
Claims (9)
1. a pulsed sputter power supply, comprises the rectified three-phase circuit, inverter circuit, high frequency transformer, current rectifying and wave filtering circuit, the pulse generating circuit that are linked in sequence; It is characterized in that: the structure of described pulse generating circuit is: comprise switching tube V output and be connected to inductance L tap a and hold; Inductance L tap o end is connected to DC power supply circuit negative pole, and inductance L tap b end is connected with magnetic control sputtering device target, and switching tube V input and magnetic control sputtering device substrate are connected in DC power supply circuit positive pole jointly; The control end of described switching tube V is connected with pwm control circuit.
2. pulsed sputter power supply according to claim 1, is characterized by: also comprise central processing unit, drive circuit, signal acquisition module, protection module, host computer, LCD MODULE, signal input module; Described central processing unit is ARM system; Described signal acquisition module comprises voltage sampling circuit, current sampling circuit; Described protection module comprises overcurrent and short-circuit protection circuit.
3. pulsed sputter power supply according to claim 1, is characterized by: the input of described rectified three-phase circuit is connected with air switch output; The input of described air switch connects can recover protective tube fast.
4. pulsed sputter power supply according to claim 2, is characterized by: described drive circuit comprises the driving of driving to inverter circuit and paired pulses circuit for generating; The drive singal of described drive circuit is produced by ARM system and generates after photoelectric isolating circuit process.
5. pulsed sputter power supply according to claim 2, is characterized by: described current sampling circuit comprises the output current sample circuit of output current to described current rectifying and wave filtering circuit and paired pulses circuit for generating.
6. pulsed sputter power supply according to claim 5, is characterized by: described current sampling circuit comprises current sensor, and described current sensor adopts Hall current sensor.
7. pulsed sputter power supply according to claim 2, is characterized by: described voltage sampling circuit comprises the output voltage sampling circuit of output voltage to described current rectifying and wave filtering circuit and paired pulses circuit for generating.
8. pulsed sputter power supply according to claim 2, is characterized by: described voltage sampling circuit, current sampling circuit are transferred to ARM system after A/D sample circuit.
9. pulsed sputter power supply according to claim 2, is characterized by: the Signal transmissions between described host computer and ARM system is 4G Internet Transmission.
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107911005A (en) * | 2017-11-28 | 2018-04-13 | 合肥华耀电子工业有限公司 | A kind of Switching Power Supply suitable for pulse load matching small capacitances |
| CN110855146A (en) * | 2019-11-13 | 2020-02-28 | 北京航空航天大学 | Large-current pulse type inductive energy storage power supply processor |
-
2015
- 2015-03-19 CN CN201520155011.7U patent/CN204442197U/en active Active
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107911005A (en) * | 2017-11-28 | 2018-04-13 | 合肥华耀电子工业有限公司 | A kind of Switching Power Supply suitable for pulse load matching small capacitances |
| CN110855146A (en) * | 2019-11-13 | 2020-02-28 | 北京航空航天大学 | Large-current pulse type inductive energy storage power supply processor |
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