CN114649972A - High-precision asymmetric bipolar pulse power supply system - Google Patents
High-precision asymmetric bipolar pulse power supply system Download PDFInfo
- Publication number
- CN114649972A CN114649972A CN202011512855.4A CN202011512855A CN114649972A CN 114649972 A CN114649972 A CN 114649972A CN 202011512855 A CN202011512855 A CN 202011512855A CN 114649972 A CN114649972 A CN 114649972A
- Authority
- CN
- China
- Prior art keywords
- circuit
- phase
- igbt
- power supply
- bridge
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Images
Classifications
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M11/00—Power conversion systems not covered by the preceding groups
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M3/00—Conversion of dc power input into dc power output
- H02M3/02—Conversion of dc power input into dc power output without intermediate conversion into ac
- H02M3/04—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M3/00—Conversion of dc power input into dc power output
- H02M3/02—Conversion of dc power input into dc power output without intermediate conversion into ac
- H02M3/04—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters
- H02M3/10—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
- H02M3/145—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
- H02M3/155—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only
- H02M3/156—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of output voltage or current, e.g. switching regulators
- H02M3/157—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of output voltage or current, e.g. switching regulators with digital control
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M3/00—Conversion of dc power input into dc power output
- H02M3/22—Conversion of dc power input into dc power output with intermediate conversion into ac
- H02M3/24—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters
- H02M3/28—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac
- H02M3/325—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac using devices of a triode or a transistor type requiring continuous application of a control signal
- H02M3/335—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac using devices of a triode or a transistor type requiring continuous application of a control signal using semiconductor devices only
- H02M3/33507—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac using devices of a triode or a transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of the output voltage or current, e.g. flyback converters
- H02M3/33515—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac using devices of a triode or a transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of the output voltage or current, e.g. flyback converters with digital control
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M3/00—Conversion of dc power input into dc power output
- H02M3/22—Conversion of dc power input into dc power output with intermediate conversion into ac
- H02M3/24—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters
- H02M3/28—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac
- H02M3/325—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac using devices of a triode or a transistor type requiring continuous application of a control signal
- H02M3/335—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac using devices of a triode or a transistor type requiring continuous application of a control signal using semiconductor devices only
- H02M3/33569—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac using devices of a triode or a transistor type requiring continuous application of a control signal using semiconductor devices only having several active switching elements
Abstract
The invention discloses a high-precision asymmetric bipolar pulse power supply system which can accurately control output power and provide a positive pulse at the rising edge of a negative pulse, wherein the size and the width of the positive pulse are adjustable. The invention comprises a phase-shifting inversion full-bridge circuit, wherein the phase-shifting inversion full-bridge circuit inverts direct current into high-frequency alternating current, adjusts inversion frequency and phase shift angle in real time according to set and feedback signals, and accurately controls the output power in real time; turning on the IGBT of the reverse polarity circuit to charge the current transformer in a period of time before the IGBT of the chopper circuit is turned off; after the IGBT of the chopper circuit is turned off for a period of time, the IGBT of the reverse polarity circuit is turned off before the next pulse of the chopper circuit comes. The invention effectively solves the problem of low control precision of the high-power high-density magnetron sputtering power supply, reduces the probability of vacuum chamber ignition, and inhibits the problems of arc target poisoning and anode disappearance.
Description
Technical Field
The invention relates to a power supply module, in particular to a high-precision asymmetric bipolar pulse power supply based on a vacuum magnetron sputtering process.
Background
The research on PVD coating plasma power supply is mature at home and abroad, but some problems to be solved still exist. Such as the problems of vacuum chamber ignition, cathode poisoning, anode disappearance, low power linear regulation precision and the like.
The magnetron sputtering process requires a magnetron sputtering power supply to quickly ionize working gas to form stable plasma, and form stable incident ion flow on the surface of a target material. The magnetron sputtering power supply is divided into a direct current power supply and a pulse power supply. The problems of target poisoning, anode disappearance, discharge arcing and the like easily occur when the direct current power supply is used for preparing the film. The pulse power supply is divided into a unipolar pulse power supply and a bipolar pulse power supply, and the waveform of the output pulse voltage is approximate to a rectangular wave. Generally, the positive electrode of a power supply is connected with a vacuum chamber shell and is connected to the ground; the negative pole of the power supply is connected with the magnetic control target, in one period, the positive voltage of the unidirectional pulse power supply is zero, the sputtering deposition only occurs in the negative voltage, and the neutralization effect of the surface charge of the target material is not ideal when the voltage is zero; when the bipolar power supply is under negative voltage, the power supply voltage is used for sputtering the target material; when the positive voltage is applied, electrons are introduced to clean the surface of the target material and neutralize positive charges accumulated on the surface of the target material, so that the accumulation and arcing of the charges in the film deposition process can be effectively overcome, and the problems of cathode poisoning, anode disappearance and the like are effectively solved. At present, the number of professional manufacturers for developing plasma power supplies in China is small, the number of manufacturers for producing pulse magnetron sputtering power supplies is less, and the manufacturers are mostly direct current power supplies and unipolar pulse magnetron sputtering power supplies. The two solutions of the bipolar pulse magnetron sputtering power supply which can be found at present are as follows:
a bipolar pulse power model machine is developed by adopting an asymmetric pulse generator, and the requirement of a high-power high-density magnetron sputtering process cannot be met due to low output voltage.
A network circuit structure topology is formed by bridge type pulses, and bipolar pulses with the highest voltage amplitude of 800V alternating positive and negative are generated on a vacuum coating load. The method has the advantages of complex circuit structure, inconvenience for industrialization, symmetrical positive and negative pulses, suitability for specific targets only and narrow application range. As previously mentioned, the positive voltage assumes the task of introducing electrons and neutralizing the positive charge accumulated on the target surface, thereby cleaning the target surface and reducing arcing, and does not require the same energy as the negative electrode assuming the sputter deposition function. Therefore, the voltage waveform required for the vacuum magnetron sputtering process should be asymmetric bipolar, with the magnitude and duration of the positive voltage being much smaller than the magnitude and duration of the negative voltage.
Disclosure of Invention
The invention aims to overcome the defects of the prior art, can accurately control the output power, can provide a positive pulse at the rising edge of the negative pulse, has adjustable size and width of the positive pulse, effectively solves the problem of low control accuracy of a high-power high-density magnetron sputtering power supply, reduces the probability of striking sparks of a vacuum chamber, and inhibits the problems of arc target poisoning and anode disappearance.
In order to achieve the purpose, the high-precision asymmetric bipolar pulse power supply system adopts the following technical scheme:
a high-precision asymmetric bipolar pulse power supply system comprises a phase-shift inverter full-bridge circuit, wherein the phase-shift inverter full-bridge circuit inverts direct current into high-frequency alternating current, adjusts the inverter frequency and the phase shift angle in real time according to set and feedback signals, and accurately controls the output power in real time;
further comprising: the IGBT switching circuit comprises a chopper circuit and a reverse polarity circuit, wherein the IGBT of the reverse polarity circuit is switched on to charge the current transformer in a period of time before the IGBT of the chopper circuit is switched off; after the IGBT of the chopper circuit is turned off for a period of time and before the next pulse of the chopper circuit comes, the IGBT of the reverse polarity circuit is turned off; the amplitude and the pulse width of the negative voltage at the vacuum coating load end are controlled by adjusting the inductance value of the reverse polarity circuit and the switching time of the IGBT;
the input end of the phase-shifting inversion full-bridge circuit is connected with a three-phase rectification and filter circuit, the phase-shifting inversion full-bridge circuit is connected with a single-phase rectification circuit after passing through a high-frequency transformer T1, the input end of the three-phase rectification and filter circuit is connected with a three-phase alternating current input, the single-phase rectification circuit sequentially passes through the filter circuit, a reverse polarity circuit is connected behind the chopper circuit, the chopper circuit is connected with a protection circuit, the output end of the protection circuit is connected with a control circuit, the input end of the control circuit is connected with the single-phase rectification circuit, the filter circuit, the output end of the control circuit is connected with the phase-shifting inversion full-bridge circuit, and the output end of the reverse polarity circuit is connected with a vacuum coating load.
Further, the high-frequency transformer T1 converts the input voltage into a desired voltage; the protection circuit carries out real-time detection and high-speed processing on output voltage and current, ensures that the power supply can close the IGBT of the reverse polarity circuit within 1 mu S when the vacuum coating load end is abnormal, and realizes the protection of the vacuum coating load and the power supply.
Furthermore, diodes D1, D2, D3, D6, D7 and D8 of the three-phase rectification and filtering circuit form a bridge arm circuit, and one diagonal of the bridge arm is connected with a polar capacitor C2; the polar capacitor C2 stores and filters the rectified electric energy, and the input three-phase electric energy is rectified into direct current.
Furthermore, IGBT tubes Q4, Q5, Q7 and Q8 in the phase-shift inverter full-bridge circuit form a full-bridge phase-shift circuit, one diagonal of the bridge is connected to a three-phase alternating current input after passing through a three-phase rectification and filtering circuit, and the other diagonal of the bridge is connected to a high-frequency transformer T1.
Furthermore, diodes D4, D5, D9 and D10 in the single-phase rectification circuit form a single-phase rectification circuit bridge, diodes D4, D5, D9 and D10 form a bridge arm circuit, one diagonal of the bridge arm is connected with the high-frequency transformer T1, and the other diagonal of the bridge arm is connected with the filter circuit;
a filter inductor L1 and a filter capacitor C1 in the filter circuit form a low-pass filter circuit, and the single-phase rectifier circuit and the filter circuit are connected to a phase modulation circuit and an AD interface of the DSP control board.
Further, a collector C of an IGBT (insulated gate bipolar transistor) Q3 of the chopper circuit is connected with the filter circuit, the chopper circuit chops direct current into pulse waves, a gate G of the IGBT Q3 is connected with the N2 optical coupling isolation driving circuit, an emitter E of the IGBT Q3 is connected to an inductor L2 in the reverse polarity circuit through a positive electrode and a negative electrode of a diode D12, and the other end of the inductor L2 is connected to the collector C of the IGBT Q6;
the reverse polarity circuit is composed of an inductor L2 and an IGBT tube Q6, the inductor L2 is connected to the positive pole OUT + of the output, the emitter E of the IGBT tube Q6 is connected to the negative pole OUT-of the output, and the gate G of the IGBT tube Q6 is connected with the N3 high-speed optical coupling isolation driving circuit.
Furthermore, the control circuit is composed of a DSP control board and a peripheral circuit thereof, a PWM output interface of the DSP control board is connected to an IGBT (insulated gate bipolar transistor) Q6 gate G of the reverse polarity circuit after passing through a comparator U1A and an N3 high-speed optical coupling isolation driving circuit; a pin 3 of a comparison amplifier U6A is connected to a positive voltage OUT + end of a vacuum coating load through resistors R16, R17 and R18, a pin 2 of the comparison amplifier U6A is connected to a negative voltage OUT-end of the vacuum coating load through resistors R21, R22 and R23, and an output end of the comparison amplifier U6A is connected to a phase modulation circuit and an AD interface of a DSP control board through a resistor R20; the high-speed serial port of the DSP control panel is connected with an upper computer.
Further, the protection circuit is composed of amplifiers U4A, U5A and peripheral circuits thereof, a pin 2 of the amplifier U4A is connected to an inductor L2 of the reverse polarity circuit through a resistor R8 and a pin 2 of the amplifier U5A through a resistor R15, an output end of a pin 1 of the amplifier U5A is connected to a phase modulation circuit and an AD interface of the DSP control board, a pin 1 of the amplifier U4A is connected to a PWM output interface and an interrupt interface of the N2 optical coupling isolation driving circuit and the DSP control board through a coupler U3, and the PWM output interface and the interrupt interface are connected to a pin 2 of a comparator U1A.
The invention provides a high-precision asymmetric bipolar pulse power supply designed based on a phase-shifted full-bridge control algorithm and matched with the characteristic of inductance energy storage on the basis of detailed research on a vacuum magnetron sputtering process aiming at the problems of low output power linear regulation precision, easy arc striking of a vacuum chamber and the like. The power supply utilizes the characteristic of high power control precision of the phase-shifted full-bridge circuit to improve the power control precision; by utilizing the characteristic that the inductor always hinders the current change, the circuit is reasonably designed, a positive voltage is generated at the end of the negative pulse, and the magnitude of the positive voltage can be adjusted by changing the magnitude of the inductance value. Positive voltage is used for attracting electrons and neutralizing positive charges accumulated on the surface of the target material, so that the probability of arcing of the vacuum chamber is effectively reduced, and the high-power high-density magnetron sputtering process can be met; the circuit structure is simple, and industrialization is convenient to realize.
The invention can accurately control the output power, can provide a positive pulse at the falling edge of the negative pulse, and has adjustable size and width of the positive pulse, thereby effectively solving the problems of low control precision of a high-power high-density magnetron sputtering power supply, reduction of the probability of firing a vacuum chamber, and inhibition of arc target poisoning and anode disappearance.
Drawings
FIG. 1 is a schematic block circuit diagram of an embodiment of the present invention;
fig. 2 is a circuit diagram of an embodiment of the present invention.
The reference numerals are explained below:
the device comprises a three-phase rectifying and filtering circuit 11, a phase-shifting inverter full-bridge circuit 12, a high-frequency transformer T1, a single-phase rectifying circuit 14, a filtering circuit 15, a chopper circuit 16, a reverse polarity circuit 17, a control circuit 18, a protection circuit 19 and a vacuum coating load 10.
Detailed Description
For further understanding of the features and technical means of the present invention, as well as the specific objects and functions attained by the present invention, the advantages and spirit of the present invention will be further understood by reference to the following detailed description and the accompanying drawings.
The invention is a functional block diagram, referring to fig. 1, this embodiment provides a high-precision asymmetric bipolar pulse power supply based on a phase-shifted full bridge and an energy-storage inductor, the main circuit comprises a three-phase rectifying and filtering circuit 11, the input end of the three-phase rectifying and filtering circuit 11 is connected with a three-phase alternating current input, the output end of the three-phase rectifying and filtering circuit 11 is connected with a phase-shifted inverting full bridge circuit 12, the phase-shifted inverting full bridge circuit 12 is connected with a single-phase rectifying circuit 14 after passing through a high-frequency transformer T1, the single-phase rectifying circuit 14 is connected with a reverse polarity circuit 17 after sequentially passing through a filtering circuit 15 and a chopping circuit 16, the chopping circuit 16 is connected with a protection circuit 19, the output end of the protection circuit 19 is connected with a control circuit 18, the input end of the control circuit 18 is connected with the single-phase rectifying circuit 14, the output ends of the filter circuit 15 and the control circuit 18 are connected with the phase-shift inverter full-bridge circuit 12 and the chopper circuit 16, and the output end of the reversed polarity circuit 17 is connected with the vacuum coating load 10.
As shown in fig. 2, diodes D1, D2, D3, D6, D7, and D8 of the three-phase rectification and filtering circuit 11 form a bridge arm circuit, and one diagonal of the bridge arm is connected to a polar capacitor C2; the polar capacitor C2 stores and filters the rectified electric energy, and the input three-phase electric energy is rectified into direct current.
In some embodiments, the IGBT transistors Q4, Q5, Q7, Q8 in the phase-shift inverter full bridge circuit 12 form a full bridge phase-shift circuit, one diagonal of the bridge is connected to the three-phase ac input through the three-phase rectifying and filtering circuit 11, and the other diagonal of the bridge is connected to the primary side of the high-frequency transformer T1.
The phase-shift inverter full bridge circuit 12 inverts the direct current into a high frequency alternating current. And adjusting the inversion frequency and the phase shift angle in real time according to the set and feedback signals, and accurately controlling the output power in real time. The high frequency transformer T1 transforms the input voltage to a desired voltage.
Diodes D4, D5, D9, and D10 in the single-phase rectification circuit 14 form a single-phase rectification circuit bridge, and convert the boosted alternating current into direct current; diodes D4, D5, D9 and D10 form a bridge arm circuit, one diagonal of the bridge arm is connected with the secondary side of a high-frequency transformer T1, and the other diagonal of the bridge arm is connected with a filter circuit.
In some embodiments, the filter inductor L1 and the filter capacitor C1 in the filter circuit 15 form a low-pass filter circuit to filter out high-frequency noise, and an LC filter circuit (composed of the filter inductor L1 and the filter capacitor C1) is used to filter out ac components and obtain clean dc power; the single-phase rectification circuit 14 and the filter circuit 15 are connected to a phase modulation circuit and an AD interface of the DSP control board.
The collector C of an IGBT tube Q3 of the chopper circuit 16 is connected with the filter circuit 15, the gate G of a GBT tube Q3 is connected with the N2 optical coupling isolation drive circuit, the emitter E of the IGBT tube Q3 is connected to an inductor L2 in the reverse polarity circuit 17 through the anode and the cathode of a diode D12, and the other end of the inductor L2 is connected to the collector C of the IGBT tube Q6. The chopper circuit 16 chops the direct current into a pulse wave.
The reverse polarity circuit 17 comprises an inductor L2 and an IGBT tube Q6, an emitter E of the IGBT tube Q6 is connected to a negative voltage OUT-end of the vacuum coating load 10 (the emitter E of the IGBT tube Q6 is connected to an output negative electrode OUT-), a collector C of the IGBT tube Q6 is connected to a positive voltage OUT + end of the vacuum coating load 10 through an inductor L2, the inductor L2 is connected to an output positive electrode OUT +, and a gate G of the IGBT tube Q6 is connected with the N3 high-speed optical coupling isolation driving circuit.
In a period of time before the IGBT tube Q3 of the chopper circuit 16 is turned off, the IGBT tube Q6 of the reverse polarity circuit 17 is turned on to charge the inductor L2; after the IGBT Q3 of the chopper circuit 16 is turned off for a certain period of time and before the next pulse of the chopper circuit 16 comes, the IGBT Q6 of the reverse polarity circuit 17 is turned off.
In some embodiments, the control circuit 18 is composed of a DSP control board and its peripheral circuits, the signal sampling circuit samples the output voltage and current in real time, and sends them to the control circuit 18 after being conditioned to proper values by the signal conditioning circuit, and the control circuit 18 calculates the frequency and pulse width of the PWM of the IGBTs in the main power circuit and the reverse polarity circuit 17 according to the feedback signal to control the magnitude and pulse width of the power output power and reverse polarity voltage of the next cycle. And a PWM output interface of the DSP control board is connected to an IGBT tube Q6 gate G of the reverse polarity circuit 17 after passing through a high-speed optical coupling isolation driving circuit of a comparator U1A and an N3. The output voltage of the reversed polarity circuit 17 to the vacuum coating load 10 leads out a sampling control signal, and the sampling control signal is amplified and shaped by a comparison amplifier U6A of the control circuit 18 to obtain a driving signal output by PWM.
Pin 3 of the comparison amplifier U6A is connected to the positive voltage OUT + end of the vacuum coating load 10 through resistors R16, R17 and R18, pin 2 of the comparison amplifier U6A is connected to the negative voltage OUT-end of the vacuum coating load 10 through resistors R21, R22 and R23, and the output end of the comparison amplifier U6A is connected to the phase modulation circuit and the AD interface of the DSP control board through resistor R20. The high-speed serial port of the DSP control panel is connected with an upper computer.
The protection circuit 19 is composed of amplifiers U4A, U5A and peripheral circuits thereof, wherein a pin 2 of the amplifier U4A is connected to the cathode of the diode D12 and the inductor L2 of the reversed polarity circuit 17 through a resistor R8 and a pin 2 of the amplifier U5A through a resistor R15, and then is connected to the emitter E of the IGBT tube Q3 through the cathode-anode of the diode D12. And the pin 2 of the amplifier U4A is connected to the positive voltage OUT + end of the vacuum coating load 10 through a resistor R8 and a pin 2 of an amplifier U5A.
The output end of a pin 1 of the amplifier U5A is connected to a phase modulation circuit and an AD interface of the DSP control board, the pin 1 of the amplifier U4A is connected to a PWM output and interrupt interface of the N2 optical coupling isolation driving circuit and the DSP control board after passing through a coupler U3(U3A and U3B), and the PWM output and interrupt interface is connected to a pin 2 of the comparator U1A. The protection circuit 19 detects the output voltage and current in real time and processes the output voltage and current at high speed, so that when the vacuum coating load 10 end is abnormal, the power supply can close the IGBT within 1 mu S, the vacuum coating load 10 and the power supply can be protected, and the power supply can be protected within 1 mu S.
The variable inductance in the reverse polarity circuit can be realized by two methods:
1. a multi-output tap inductor is employed. Determining which tap is adopted in real time by detecting the magnitude of the negative voltage in real time, wherein the higher the negative voltage is, the larger the adopted inductor is; the smaller the negative voltage, the smaller the inductance employed. This method works well, but due to the tap's discreteness, the tap selection cannot be matched very precisely to the positive charge accumulated in the vacuum chamber.
2. And the inductance value is adjusted by adopting an inductance iron core dynamic adjustment mode. The method can obtain a positive voltage which is more accurately matched with positive charges accumulated in the vacuum chamber, and only the magnetic core automatic adjusting circuit is slightly complicated. The driving motor is required to dynamically adjust the depth of the magnetic core inserted into the inductance coil.
In the embodiment, the DSP is adopted to generate the PWM signal, and then the motor is driven by the driving circuit and drives the actuating mechanism to move the magnetic core. The embodiment improves the control precision and the protection speed of the power supply, the current transformer samples current, the sampled current signal is input into the comparator for comparison, the output of the comparator is connected with an interrupt interface pin of the DSP control board, and the overcurrent information is sent to the upper computer after the interrupt program is processed; the total reaction transit time of this example was less than 500 nS.
The invention provides a novel high-precision asymmetric bipolar pulse power supply which is designed based on the characteristics of an out-of-phase control strategy matched with inductance energy storage aiming at the problems of low output power linear regulation precision, easiness in sparking of a vacuum chamber and the like. The power supply effectively improves the power control precision and reduces the probability of sparking of a vacuum chamber by utilizing the characteristics of high control precision of the phase-shifted full-bridge power and incapability of sudden change of inductance energy, and can meet the requirement of a high-power high-density magnetron sputtering process; the circuit structure is simple, and industrialization is convenient to realize.
The above-mentioned embodiments only express some embodiments of the present invention, and the description thereof is specific and detailed, but not to be construed as limiting the scope of the present invention. It should be noted that, for a person skilled in the art, several variations and modifications can be made without departing from the inventive concept, which falls within the scope of the present invention. Therefore, the protection scope of the present invention should be subject to the appended claims.
Claims (8)
1. A high-precision asymmetric bipolar pulse power supply system comprises: the phase-shifting inversion full-bridge circuit is characterized in that the phase-shifting inversion full-bridge circuit inverts direct current into high-frequency alternating current, adjusts inversion frequency and phase shift angle in real time according to set and feedback signals, and accurately controls the output power in real time;
further comprising: the IGBT switching circuit comprises a chopper circuit and a reverse polarity circuit, wherein the IGBT of the reverse polarity circuit is switched on to charge the current transformer in a period of time before the IGBT of the chopper circuit is switched off; after the IGBT of the chopper circuit is turned off for a period of time and before the next pulse of the chopper circuit comes, the IGBT of the reverse polarity circuit is turned off; the amplitude and the pulse width of the negative voltage at the vacuum coating load end are controlled by adjusting the inductance value of the reverse polarity circuit and the switching time of the IGBT;
the input end of the phase-shift inversion full-bridge circuit is connected with a three-phase rectification and filter circuit, the phase-shift inversion full-bridge circuit is connected with a single-phase rectification circuit after passing through a high-frequency transformer T1, the input end of the three-phase rectification and filter circuit is connected with a three-phase alternating current input, the single-phase rectification circuit sequentially passes through the filter circuit and a chopper circuit and then is connected with a reverse polarity circuit, the chopper circuit is connected with a protection circuit, the output end of the protection circuit is connected with a control circuit, the input end of the control circuit is connected with the single-phase rectification circuit and the filter circuit, the output end of the control circuit is connected with the phase-shift inversion full-bridge circuit, and the output end of the reverse polarity circuit is connected with a vacuum coating load.
2. A high precision asymmetric bipolar pulse power supply system as claimed in claim 1, wherein said high frequency transformer T1 transforms the input voltage to the required voltage; the protection circuit carries out real-time detection and high-speed processing on output voltage and current, ensures that the power supply can close the IGBT of the reverse polarity circuit within 1 mu S when the vacuum coating load end is abnormal, and realizes the protection of the vacuum coating load and the power supply.
3. A high-precision asymmetric bipolar pulse power supply system as claimed in claim 1, wherein the diodes D1, D2, D3, D6, D7 and D8 of the three-phase rectification and filtering circuit form a bridge arm circuit, and one diagonal of the bridge arm is connected with a polar capacitor C2; the polar capacitor C2 stores and filters the rectified electric energy, and the input three-phase electric energy is rectified into direct current.
4. The high-precision asymmetric bipolar pulse power supply system as claimed in claim 1, wherein IGBT tubes Q4, Q5, Q7 and Q8 in the phase-shift inverter full-bridge circuit form a full-bridge phase-shift circuit, one diagonal of the bridge is connected to a three-phase alternating current input after passing through a three-phase rectification and filtering circuit, and the other diagonal of the bridge is connected to a high-frequency transformer T1.
5. A high-precision asymmetric bipolar pulse power supply system as claimed in claim 1, wherein diodes D4, D5, D9 and D10 in the single-phase rectification circuit form a single-phase rectification circuit bridge, diodes D4, D5, D9 and D10 form a bridge arm circuit, one diagonal of the bridge arm is connected with a high-frequency transformer T1, and the other diagonal of the bridge arm is connected with a filter circuit;
a filter inductor L1 and a filter capacitor C1 in the filter circuit form a low-pass filter circuit, and the single-phase rectifier circuit and the filter circuit are connected to a phase modulation circuit and an AD interface of the DSP control board.
6. The high-precision asymmetric bipolar pulse power supply system as claimed in claim 1, wherein a collector C of an IGBT tube Q3 of the chopper circuit is connected with a filter circuit, the chopper circuit chops direct current into pulse waves, a gate G of the IGBT tube Q3 is connected with an N2 optical coupling isolation drive circuit, an emitter E of the IGBT tube Q3 is connected to an inductor L2 in the reverse polarity circuit through a positive electrode-negative electrode of a diode D12, and the other end of the inductor L2 is connected to a collector C of the IGBT tube Q6;
the reverse polarity circuit is composed of an inductor L2 and an IGBT tube Q6, the inductor L2 is connected to the positive pole OUT + of the output, the emitter E of the IGBT tube Q6 is connected to the negative pole OUT-of the output, and the gate G of the IGBT tube Q6 is connected with the N3 high-speed optical coupling isolation driving circuit.
7. The high-precision asymmetric bipolar pulse power supply system according to claim 1, wherein the control circuit is composed of a DSP control board and a peripheral circuit thereof, a PWM output interface of the DSP control board is connected to an IGBT (insulated gate bipolar transistor) Q6 gate G of a reverse polarity circuit after passing through a comparator U1A and an N3 high-speed optical coupling isolation driving circuit; a pin 3 of a comparison amplifier U6A is connected to a positive voltage OUT + end of a vacuum coating load through resistors R16, R17 and R18, a pin 2 of the comparison amplifier U6A is connected to a negative voltage OUT-end of the vacuum coating load through resistors R21, R22 and R23, and an output end of the comparison amplifier U6A is connected to a phase modulation circuit and an AD interface of a DSP control board through a resistor R20; the high-speed serial port of the DSP control panel is connected with an upper computer.
8. The high-precision asymmetric bipolar pulse power supply system as claimed in claim 1, wherein the protection circuit is composed of amplifiers U4A, U5A and peripheral circuits thereof, pin 2 of amplifier U4A is connected to inductor L2 of the reverse polarity circuit through resistor R8 and pin 2 of amplifier U5A through resistor R15, the output end of pin 1 of amplifier U5A is connected to the phase modulation circuit and AD interface of the DSP control board, pin 1 of amplifier U4A is connected to PWM output and interrupt interface of the N2 optical coupling isolation driving circuit and the DSP control board through coupler U3, and the PWM output and interrupt interface is connected to pin 2 of comparator U1A.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202011512855.4A CN114649972A (en) | 2020-12-20 | 2020-12-20 | High-precision asymmetric bipolar pulse power supply system |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202011512855.4A CN114649972A (en) | 2020-12-20 | 2020-12-20 | High-precision asymmetric bipolar pulse power supply system |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN114649972A true CN114649972A (en) | 2022-06-21 |
Family
ID=81990622
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202011512855.4A Pending CN114649972A (en) | 2020-12-20 | 2020-12-20 | High-precision asymmetric bipolar pulse power supply system |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN114649972A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115161594A (en) * | 2022-08-02 | 2022-10-11 | 上海陛通半导体能源科技股份有限公司 | Film coating equipment and method capable of improving deep hole filling |
-
2020
- 2020-12-20 CN CN202011512855.4A patent/CN114649972A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115161594A (en) * | 2022-08-02 | 2022-10-11 | 上海陛通半导体能源科技股份有限公司 | Film coating equipment and method capable of improving deep hole filling |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN214429469U (en) | Simple and practical PVD coating power module | |
| CN100550274C (en) | The control of the plasma conversion in sputter processing systems | |
| CN102307017B (en) | Control method applied to active-clamp flyback miniature photovoltaic grid-connected inverter device | |
| CN110474557B (en) | Control strategy and modulation method for four-quadrant converter of direct-drive permanent magnet electric locomotive | |
| CN104753386A (en) | Pulse sputtering power source | |
| CN112271926B (en) | Prediction current mode control method of GaN-based active clamp flyback converter | |
| CN111711364B (en) | Self-adaptive leading edge blanking circuit based on high-precision load current detection technology | |
| CN114649972A (en) | High-precision asymmetric bipolar pulse power supply system | |
| CN112468011B (en) | Voltage-limiting shaping circuit applied to high-voltage microsecond pulse power supply | |
| CN115189578A (en) | Isolated bidirectional charger CLLC converter control device and method | |
| CN206135741U (en) | High pressure plasma power | |
| CN110729914B (en) | Closed-loop regulated high-precision superaudio pulse power supply | |
| CN112636622A (en) | Soft switch control circuit of neutral point clamping type three-level inverter | |
| CN102427627B (en) | Full-bridge phase shift induction heating device | |
| CN113037125B (en) | Resonance repetition frequency high-voltage pulse power supply for generating low-temperature plasma | |
| CN103516194A (en) | Power factor correction (PFC) circuit, switching power supply module and PFC method | |
| Gupta et al. | Hysteresis based triangular current mode control for bridgeless totem pole converter | |
| CN204442197U (en) | A kind of pulsed sputter power supply | |
| Itakura et al. | Soft-switching technique applicable to capacitive load for resonant inverter of plasma generator | |
| CN213937765U (en) | Switch type driving power amplifier with large capacitive load | |
| CN112272423B (en) | Electromagnetic induction heating control method, electromagnetic heating device, and storage medium | |
| CN210053343U (en) | Drive control circuit and household electrical appliance | |
| US20190222050A1 (en) | Dual-output port charging circuit and control method | |
| CN115276421B (en) | Bipolar pulse power supply, power supply control method and readable storage medium | |
| CN211959065U (en) | PFC circuit |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination |