CN103516194A - Power factor correction (PFC) circuit, switching power supply module and PFC method - Google Patents

Power factor correction (PFC) circuit, switching power supply module and PFC method Download PDF

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CN103516194A
CN103516194A CN201210227082.4A CN201210227082A CN103516194A CN 103516194 A CN103516194 A CN 103516194A CN 201210227082 A CN201210227082 A CN 201210227082A CN 103516194 A CN103516194 A CN 103516194A
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diode
switch
switch module
circuit
parallel
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CN103516194B (en
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邓凯
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Dimension Corp.
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Emerson Network Power Energy Systems Noth America Inc
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    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02BCLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
    • Y02B70/00Technologies for an efficient end-user side electric power management and consumption
    • Y02B70/10Technologies improving the efficiency by using switched-mode power supplies [SMPS], i.e. efficient power electronics conversion e.g. power factor correction or reduction of losses in power supplies or efficient standby modes

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Abstract

The invention discloses a power factor correction (PFC) circuit, a switching power supply module and a PFC method. The PFC circuit includes a bridge rectifier circuit, a second parallel branch, a third parallel branch, a capacitor, an inductive branch and a first parallel branch; the bridge rectifier circuit is formed by a first diode, a second diode, a third diode and a fourth diode; the second parallel branch is formed by connecting a second switching assembly and the first diode in parallel; the third parallel branch is formed by connecting a third switching assembly and the second diode in parallel; one end of the capacitor is connected with the common end between the third diode and the second parallel branch, and the other end of the capacitor is connected with the common end between the fourth diode and the second parallel branch; the inductive branch is formed by connecting an AC power supply and an inductor in series; the first parallel branch is formed by connecting a first switching assembly and the two ends of the inductive branch in parallel. The PFC circuit can achieve a double frequency function, so that the power density of the switching power supply module is increased when the switching power supply module works under a double frequency working state.

Description

Circuit of power factor correction and switch power module, power factor correcting method
Technical field
The present invention relates to electronic technology field, espespecially a kind of circuit of power factor correction and switch power module, power factor correcting method.
Background technology
Switch power module is a kind of condenser input type circuit, high efficiency, high power density are two important indicators of switch power module, for reaching high efficiency target, reduce the exchange power loss that the phase difference between electric current and voltage causes, just need single-phase power factor correcting (Power Factor Correction, PFC) circuit to improve power factor, wherein, power factor refers to the relation between effective power and total power consumption, generally refers to that effective power is divided by the ratio of total power consumption.Can be used for weighing the degree that electric power is used effectively, power factor value is larger, and electric power utilance is higher.PFC aspect, adopts in the industry non-bridge PFC circuits topology conventionally, at present in power module conventional single-phase Bridgeless power factor circuit correcting circuit topology comprise two inductance without bridge topology, totem without bridge topology, bidirectional switch without circuit topologies such as bridge topologys.
Be illustrated in figure 1 two inductance without bridge topology, this circuit topology comprises metal-oxide-semiconductor switching device Q1 and the rectifier diode D1 of series connection, metal-oxide-semiconductor switching device Q2 and the rectifier diode D2 of series connection, AC power AC, two inductance L 1, L2, rectifier diode D3, D4, capacitor C etc., the annexation between each device is specifically referring to Fig. 1.When exchanging the positive half cycle of input, switching device Q1 conducting, inductance L 1 charging, now switching device Q2 conducting, then switching device Q2 cut-off, inductance L 1 releases energy, capacitor C charging; When exchanging input negative half period, switching device Q2 conducting, inductance L 2 chargings, now switching device Q1 conducting, then switching device Q1 cut-off, inductance L 2 releases energy, capacitor C charging.In this process, the operating frequency of inductance is identical with the operating frequency of switching device.
Be illustrated in figure 2 typical totem without bridge topology, this circuit topology comprises two metal-oxide-semiconductor switching device Q1, Q2 of series connection, two rectifier diode D3, D4 of series connection, AC power AC, inductance L, capacitor C etc., the annexation between each device is specifically referring to Fig. 2.When exchanging the positive half cycle of input, switching device Q1 conducting, rectifier diode D3 reverse bias, Q2 conducting in this process, inductance L storage power, after this Q2 cut-off, inductance L releases energy, and capacitor C is charged and produced output voltage; When exchanging input negative half period, switching device Q2 conducting, rectifier diode D4 reverse bias, Q1 conducting in this process, inductance L storage power, after this Q1 cut-off, inductance L releases energy, and capacitor C is charged and produced output voltage; In this process, the operating frequency of inductance is identical with the operating frequency of switching device.
Be illustrated in figure 3 bidirectional switch without bridge topology, two metal-oxide-semiconductor switching device Q1, Q2 of series connection, two rectifier diode D1, D2 of series connection, two rectifier diode D3, D4 of series connection, AC power AC, inductance L, capacitor C etc., the annexation between each device is specifically referring to Fig. 3.
Above-mentioned Fig. 1, Fig. 2, each non-bridge PFC circuits topology shown in Fig. 3, in performance, respectively there is quality, but the operating frequency that one of its denominator is exactly inductance equals the operating frequency of switching tube, improve the power density of the circuit topology with this specific character, (AC input filter is at Fig. 1 just must to reduce PFC inductance and AC input filter, 2, not shown in 3) volume, the volume that effectively reduces PFC inductance and input filter needs to realize by improving the operating frequency of circuit, and the operating frequency that improves circuit will cause the loss of drive circuit to increase, face the problem that heat radiation is difficult, even may destroy because heat dissipation problem causes device.Therefore, non-bridge PFC circuits topology is limited to the characteristic of device itself, and the raising of its operating frequency is restricted, thereby causes the raising of power density limited.
Summary of the invention
The embodiment of the present invention provides a kind of circuit of power factor correction and switch power module, power factor correcting method, in order to solve the non-bridge PFC circuits topology power density existing in prior art, improves limited problem.
, comprising:
The bridge rectifier of the first diode, the second diode, the 3rd diode and the 4th diode;
Second switch assembly, forms the second parallel branch with the first diodes in parallel;
The 3rd switch module, forms the 3rd parallel branch with the second diodes in parallel;
Wherein: in the second parallel branch, the common port of the first diode anode and second switch inter-module is connected with the common port between the 3rd switch module with the second diode cathode in the 3rd parallel branch, and the first diode cathode is connected with the negative electrode of the 3rd diode with the common port of second switch inter-module; The anode of the 3rd diode is connected with the negative electrode of the 4th diode, and the 4th diode anode is connected with the common port between the second diode anode with the 3rd switch module in the 3rd parallel branch;
Electric capacity, one end connects the common port between the 3rd diode and the second parallel branch, and the other end connects the common port between the 4th diode and the second parallel branch;
AC power and inductance, the inductive branch being composed in series;
The first switch module, two ends formation the first parallel branch in parallel with described inductive branch, wherein: one end of the first parallel branch connects the common port between the second parallel branch and the 3rd parallel branch, the other end connect the 4th diode negative electrode and and the anode of the 3rd diode between common port.
, comprise above-mentioned circuit of power factor correction.
, comprising: adopt above-mentioned circuit of power factor correction to realize, the method comprises:
When AC power input becomes positive half wave, comprise following process: described the first switch module is closed, induction charging; The first switch module disconnects, and described inductance, along the first diode and the 4th diode continuousing flow, is given described capacitor charging, described the 3rd switch module conducting in charging process, and described inductance is along the 3rd switch module and the 4th diode charging; Described the 3rd switch module disconnects, and described inductance, along the first diode and the 4th diode continuousing flow, is given described capacitor charging; Repeat said process until AC power input becomes negative half-wave;
When AC power input becomes negative half-wave, comprise following process: described the first switch module is closed, induction charging; The first switch module disconnects, and described inductance, along the 3rd diode and the second diode continuousing flow, is given described capacitor charging, the conducting in charging process of described second switch assembly, and described inductance is along the 3rd diode and the charging of second switch assembly; Described second switch assembly disconnects, and described inductance, along the 3rd diode and the second diode continuousing flow, is given described capacitor charging; Repeat said process until AC power input becomes positive half wave.
Beneficial effect of the present invention is as follows:
The circuit of power factor correction that the embodiment of the present invention provides and switch power module, power factor correcting method, this circuit is by first switch module in parallel with inductive branch, second switch assembly and the 3rd switch module of series connection, first diode in parallel with second switch assembly, second diode in parallel with the 3rd switch module, the alternation of each switch modules such as the 3rd diode of series connection and the 4th diode and diode, can realize two frequencys multiplication of circuit of power factor correction, solve non-bridge PFC circuits topology power density and improved limited problem, do not exist heat radiation to wait the problem that affects circuit performance and device lifetime, and improved the power density of circuit topology, by controlling operating state and the operating frequency of each switching device, also can realize single frequency multiplication simultaneously, make the use control strategy of circuit more flexible, various, improve versatility and the general applicability of circuit topology.
Accompanying drawing explanation
Accompanying drawing described herein is used to provide a further understanding of the present invention, forms a part of the present invention, and schematic description and description of the present invention is used for explaining the present invention, does not form inappropriate limitation of the present invention.In the accompanying drawings:
Fig. 1 be in prior art two inductance without the electrical block diagram of bridge topology;
Fig. 2 be in prior art totem without the electrical block diagram of bridge topology;
Fig. 3 be in prior art bidirectional switch without the electrical block diagram of bridge topology;
Fig. 4 is the structural representation of circuit of power factor correction in the embodiment of the present invention one;
Fig. 5 is the working timing figure of circuit of power factor correction in the embodiment of the present invention one;
Fig. 6 is the structural representation of circuit of power factor correction in the embodiment of the present invention two.
Embodiment
In order to make technical problem to be solved by this invention, technical scheme and beneficial effect clearer, clear, below in conjunction with drawings and Examples, the present invention is further elaborated.Should be appreciated that specific embodiment described herein, only in order to explain the present invention, is not intended to limit the present invention.
Embodiment mono-
In order to solve non-bridge PFC circuits topology power density in prior art, improve limited problem, the embodiment of the present invention one provides a kind of brand-new circuit of power factor correction, sort circuit topology Ke Yi She Ge is in switch power module, can realize two double frequency functions, so-called two frequencys multiplication equal two times of switching device operating frequency with regard to referring to the operating frequency of inductance.The structure of this circuit topology as shown in Figure 4, comprising:
The bridge rectifier that the first diode D1, the second diode D2, the 3rd diode D3 and the 4th diode D4 form;
Second switch assembly S2, with the first diode D1 formation the second parallel branch in parallel;
The 3rd switch module S3, with the second diode D2 formation the 3rd parallel branch in parallel;
Wherein: in the second parallel branch, common port between the first diode D1 anode and second switch assembly S2 is connected with the common port between the 3rd switch module S3 with the second diode D2 negative electrode in the 3rd parallel branch, and the first diode D1 negative electrode is connected with the negative electrode of the 3rd diode D3 with the common port between second switch assembly S2; The anode of the 3rd diode D3 is connected with the negative electrode of the 4th diode D4, and the 4th diode D4 anode is connected with the common port between the second diode D2 anode with the 3rd switch module S3 in the 3rd parallel branch;
Capacitor C, one end connects the common port between the 3rd diode D3 and the second parallel branch, and the other end connects the common port between the 4th diode D4 and the second parallel branch;
AC power AC and inductance L, the inductive branch being composed in series;
The first switch module S1, two ends formation the first parallel branch in parallel with inductive branch, wherein: one end of the first parallel branch connects the common port between the second parallel branch and the 3rd parallel branch, the other end connect the 4th diode D4 negative electrode and and the anode of the 3rd diode D3 between common port.
Preferably, above-mentioned circuit of power factor correction, the first switch module can comprise the first switching device of the setting quantity of first switching device or parallel connection; Second switch assembly can comprise the second switch device of the setting quantity of a second switch device or parallel connection; The 3rd switch module can comprise the 3rd switching device of the setting quantity of the 3rd switching device or parallel connection.The first switch module S1 is as shown in Figure 4 a first switching device S1, and second switch assembly S2 is a second switch device S2, and the 3rd switch module S3 is a 3rd switching device S3.
Preferably, in above-mentioned circuit of power factor correction, the first switching device S1 is bidirectional switch, second switch device S2 and the 3rd switching device S3 are metal-oxide semiconductor (MOS) (Metal Oxide Semiconductor, MOS) pipe, insulated gate bipolar transistor (Insulated Gate Bipolar Transistor, IGBT) or bidirectional switch.
Preferably, in above-mentioned circuit of power factor correction, the first diode D1 and the second diode D2 are fast diode, and the 3rd diode D3 and the 4th diode D4 are slow recovery diode.Or the first diode D1 and the second diode D2 are the body diode that is respectively second switch assembly S2 and the 3rd switch module S3, the 3rd diode D3 and the 4th diode D4 are slow recovery diode.
While adopting above-mentioned circuit of power factor correction to realize power factor correction, by the alternation of each switch module and each diode, can make two times of switch module operating frequencies such as operating frequency on inductance.
Concrete, when AC power input positive half wave, the 3rd switch module S3 work, coordinate with the first switch module S1, the first diode D1, the second diode D2, the 3rd diode D3, the 4th diode D4, AC power AC, inductance L, capacitor C, realize two frequencys multiplication of operating frequency in inductance L.Wherein the 3rd switch module S3 work refers to that the 3rd switch module S3 is according to control strategy conducting and disconnection.
When the negative half-wave of AC power input, second switch assembly S2 work, coordinate with the first switch module S1, the first diode D1, the second diode D2, the 3rd diode D3, the 4th diode D4, AC power AC, inductance L, capacitor C, realize two frequencys multiplication of operating frequency in inductance L.Wherein second switch assembly S2 work refers to that second switch assembly S2 is according to control strategy conducting and disconnection.
The method that adopts above-mentioned circuit of power factor correction to realize power factor correction comprises:
When AC power input becomes positive half wave, comprise following process:
The first switch module S1 is closed, inductance L charging; Now, second switch assembly S2, the 3rd switch module S3 are off-state, V ab=0;
The first switch module S1 disconnects, and inductance L, along the first diode D1 and the 4th diode D4 afterflow, is charged to capacitor C; V now ab=V 0;
The 3rd switch module S3 closed conducting in capacitor C charging process, inductance L is along the 3rd switch module S3 and the 4th diode D4 charging; Now, second switch assembly S2 is still off-state, V ab=0;
The 3rd switch module S3 disconnects, and inductance, along the first diode D1 and the 4th diode D4 afterflow, charges to capacitor C; V now ab=V 0;
Repeat said process until AC power input becomes negative half-wave;
When AC power input becomes negative half-wave, comprise following process:
The first switch module S1 is closed, inductance L charging; Now, second switch assembly S2, the 3rd switch module S3 all remain open state, V ab=0;
The first switch module S1 disconnects, and inductance L, along the 3rd diode D3 and the second diode D2 afterflow, is charged to capacitor C; V now ab=V0;
Second switch assembly S2 closed conducting in capacitor C charging process, inductance L is along the 3rd diode D3 and second switch assembly S2 charging; Now, the 3rd switch module S3 is still off-state, V ab=0;
Second switch assembly S2 disconnects, and inductance L, along the 3rd diode D3 and the second diode D2 afterflow, is charged to capacitor C; V now ab=V 0;
Repeat said process until AC power input becomes positive half wave.
When AC power input positive half wave and negative half-wave, the work schedule of the circuit shown in Fig. 4 as shown in Figure 5.In Fig. 5, V abvoltage between 2 of a in circuit shown in marked graph 4, b, its voltage is 0 and V 0between saltus step; i lrepresent the curent change situation in inductance L, the represented situation of change of the broken line in Fig. 5 specifically, level and smooth camber line wherein represents the input voltage of AC power; S1, S3, S2 represent respectively the operating state saltus step situation of the first switch module S1, the 3rd switch module S3 and second switch assembly S2.
According to above-mentioned work schedule situation of change, can find out when the operating frequency of the first switch module S1, second switch assembly S2 and the 3rd switch module S3 is fs, due to the first switch module S1 and second switch assembly S2, the 3rd switch module S3 alternation repeatedly, operating frequency in inductance L is 2fs, has realized two frequencys multiplication that exchange input current ripple.In the whole course of work, due to the reverse recovery characteristic of slow recovery diode D3, D4, the current potential that b is ordered is clamped at 0V or Vo, thereby makes circuit of the present invention have the good EMC characteristic identical with circuit shown in Fig. 1, Fig. 2, Fig. 3.
Above-mentioned circuit of power factor correction, by different control strategies, can also be realized the function of different frequencys multiplication.
Control strategy one:
The operating frequency of controlling the first switch module S1 in above-mentioned circuit of power factor correction is the first operating frequency f1, and the operating frequency of second switch assembly S2 and the 3rd switch module S3 is the second operating frequency f2.Here suppose f1 > f2(also can f2 > f1), L operating frequency is f1+f2; By adjusting f2, can make circuit be operated in as required the optional frequency in f1 to f1+f2 scope.This control strategy can be used for realizing the strategy frequently of trembling of circuit, wherein, trembles strategy frequently and refers to that circuit can change continuously within the scope of setpoint frequency, changes within the scope of frequency f 1 to f1+f2 continuously than described above.Also can be used for realizing the Local Property that mixing controls to adjust optimized circuit.
Control strategy two:
The the first switch module S1 controlling in above-mentioned circuit of power factor correction disconnects, and the operating frequency of second switch assembly S2 and the 3rd switch module S3 is the 3rd operating frequency f3, and wherein the value of f3 can be above-mentioned fs.Now can make the circuit shown in Fig. 4 realize the mode of operation of circuit shown in Fig. 2, the operating frequency in inductance L all becomes single frequency multiplication.
Control strategy three:
The operating frequency of controlling the first switch module S1 in above-mentioned circuit of power factor correction is the 4th operating frequency f4, and second switch assembly S2 and the 3rd switch module S3 disconnect, and wherein the value of f4 can be above-mentioned fs.Now can make the circuit shown in Fig. 4 realize the mode of operation of circuit shown in Fig. 3, the operating frequency in inductance L all becomes single frequency multiplication.
Above-mentioned circuit of power factor correction, combine the advantage of circuit topology shown in Fig. 2 and Fig. 3, by different control strategies, realize working independently of these two kinds of circuit or parallel operation, thereby there is more flexible and various control mode, be conducive to circuit according to the variation of operating state, freely select operating circuit pattern.For example: when lower or input current is very little at input voltage, circuit can enter interrupter duty pattern, now shorten the reverse recovery time of slow recovery diode, at this moment can cause b point current potential to be no longer clamped to stable potential, cause very strong common mode disturbances.Now, by controlling the first switch module S1, disconnect, only allow second switch assembly S2, the 3rd switch module S3 work, make whole circuit realize the mode of operation of the circuit shown in Fig. 2, can effectively address this problem.Similarly, under some operating state, also can control second switch assembly S2, the 3rd switch module S3 disconnection, only allow the first switch module S1 work, make whole circuit realize the mode of operation of the circuit shown in Fig. 3, can reduce the switching loss of second switch assembly S2, the 3rd switch module S3, improve the efficiency of module.
Because above-mentioned circuit of power factor correction can be realized the parallel operation state of circuit topology shown in Fig. 2 and Fig. 3, the first switch module S1 and second switch assembly S2 when AC power is input as positive half wave, with opening with closing (or staggered a period of time); The first switch module S1 and the 3rd switch module S3 during the negative half-wave of input, with opening with closing (or staggered a period of time), thereby realize the parallel operation of circuit, can improve the efficiency of circuit.
The circuit of power factor correction that the embodiment of the present invention provides, can not be limited to the operating frequency of single switch device, make single switching device still can be operated in suitable switching frequency, exchange two frequencys multiplication that input side and PFC inductance work in its switching frequency simultaneously, thereby improved the power density of PFC without bridge topology, and can not cause because of the raising of power density heat radiation etc. to affect the problem of circuit performance and device lifetime.Simultaneously, above-mentioned circuit of power factor correction, by different control strategies, can also realize single frequency multiplication, its control strategy is more versatile and flexible, by control strategy flexibly, realization is switched under different mode of operations, thereby both can realize two frequencys multiplication, also can realize the mode of operation of the circuit shown in Fig. 2 in prior art, Fig. 3, there is the advantage of the circuit shown in Fig. 2, Fig. 3, there is greater flexibility, improved versatility and the general applicability of circuit topology.
Embodiment bis-
In order to solve non-bridge PFC circuits topology power density in prior art, improve limited problem, the embodiment of the present invention two provides a kind of brand-new circuit of power factor correction, sort circuit topology can realize 2n double frequency function, and the structure of this circuit topology as shown in Figure 6, comprising:
This circuit topology and the difference of the circuit topology shown in Fig. 4 are that the first switch module S1 is the first switching device of setting quantity in parallel, as shown in Figure 6 the first switching device S 11..., S 1n; Second switch assembly S2 is the second switch device of setting quantity in parallel, as shown in Figure 6 second switch device S 21..., S 2n; The 3rd switch module S3 is the 3rd switching device of setting quantity in parallel, the 3rd switching device S as shown in FIG. 31..., S 3n.
This circuit topology is the derivative popularization of circuit topology shown in Fig. 4, by the parallel connection of switching tube, by control, make each switching tube with the frequency alternation of fs, only with an inductance, just realize the circuit parallel operation shown in a plurality of Fig. 4, can make like this frequency upgrading on PFC inductance to 2n*fs.
Above-mentioned explanation illustrates and has described the preferred embodiments of the present invention, but as previously mentioned, be to be understood that the present invention is not limited to disclosed form herein, should not regard the eliminating to other embodiment as, and can be used for various other combinations, modification and environment, and can, in invention contemplated scope described herein, by technology or the knowledge of above-mentioned instruction or association area, change.And the change that those skilled in the art carry out and variation do not depart from the spirit and scope of the present invention, all should be in the protection range of the appended claim of the present invention.

Claims (8)

1. a circuit of power factor correction, is characterized in that, comprising:
The bridge rectifier of the first diode, the second diode, the 3rd diode and the 4th diode;
Second switch assembly, forms the second parallel branch with the first diodes in parallel;
The 3rd switch module, forms the 3rd parallel branch with the second diodes in parallel;
Wherein: in the second parallel branch, the common port of the first diode anode and second switch inter-module is connected with the common port between the 3rd switch module with the second diode cathode in the 3rd parallel branch, and the first diode cathode is connected with the negative electrode of the 3rd diode with the common port of second switch inter-module; The anode of the 3rd diode is connected with the negative electrode of the 4th diode, and the 4th diode anode is connected with the common port between the second diode anode with the 3rd switch module in the 3rd parallel branch;
Electric capacity, one end connects the common port between the 3rd diode and the second parallel branch, and the other end connects the common port between the 4th diode and the second parallel branch;
AC power and inductance, the inductive branch being composed in series;
The first switch module, two ends formation the first parallel branch in parallel with described inductive branch, wherein: one end of the first parallel branch connects the common port between the second parallel branch and the 3rd parallel branch, the other end connect the 4th diode negative electrode and and the anode of the 3rd diode between common port.
2. circuit of power factor correction as claimed in claim 1, is characterized in that, described the first switch module comprises the first switching device of the setting quantity of first switching device or parallel connection; Second switch assembly comprises the second switch device of the setting quantity of a second switch device or parallel connection; The 3rd switch module comprises the 3rd switching device of the setting quantity of the 3rd switching device or parallel connection.
3. circuit of power factor correction as claimed in claim 2, it is characterized in that, described the first switching device is bidirectional switch, and second switch device and the 3rd switching device are metal-oxide semiconductor (MOS) metal-oxide-semiconductor, insulated gate bipolar transistor IGBT or bidirectional switch.
4. circuit of power factor correction as claimed in claim 1, is characterized in that, described the first diode and the second diode are fast diode, and the 3rd diode and the 4th diode are slow recovery diode.
5. circuit of power factor correction as claimed in claim 1, is characterized in that, described the first diode and the second diode are the body diode that is respectively second switch assembly and the 3rd switch module, and the 3rd diode and the 4th diode are slow recovery diode.
6. the circuit of power factor correction as described in as arbitrary in claim 1-5, is characterized in that, the operating frequency of the first switch module is that the operating frequency of the first operating frequency, second switch assembly and the 3rd switch module is the second operating frequency; Or
The first switch module disconnects, and the operating frequency of second switch assembly and the 3rd switch module is the 3rd operating frequency; Or
The operating frequency of the first switch module is the 4th operating frequency, and second switch assembly and the 3rd switch module disconnect.
7. a switch power module, is characterized in that, comprises the circuit of power factor correction as described in as arbitrary in claim 1-6.
8. a power factor correcting method, is characterized in that, comprising: adopt the circuit of power factor correction as described in as arbitrary in claim 1-6 to realize, the method comprises:
When AC power input becomes positive half wave, comprise following process: described the first switch module is closed, induction charging, second switch assembly S2 and the 3rd switch module S3 remain open state; The first switch module disconnects, and described inductance, along the first diode and the 4th diode continuousing flow, is given described capacitor charging, the closed conducting in described capacitor charging process of described the 3rd switch module, and described inductance is along the 3rd switch module and the 4th diode charging; Described the 3rd switch module disconnects, and described inductance, along the first diode and the 4th diode continuousing flow, is given described capacitor charging; Repeat said process until AC power input becomes negative half-wave;
When AC power input becomes negative half-wave, comprise following process: described the first switch module is closed, induction charging, second switch assembly S2 and the 3rd switch module S3 remain open state; The first switch module disconnects, and described inductance, along the 3rd diode and the second diode continuousing flow, is given described capacitor charging, the closed conducting in described capacitor charging process of described second switch assembly, and described inductance is along the 3rd diode and the charging of second switch assembly; Described second switch assembly disconnects, and described inductance, along the 3rd diode and the second diode continuousing flow, is given described capacitor charging; Repeat said process until AC power input becomes positive half wave.
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CN104953811A (en) * 2014-03-24 2015-09-30 艾默生网络能源系统北美公司 Control circuit for totem bridgeless PFC circuit
CN105337516A (en) * 2015-11-01 2016-02-17 华南理工大学 High-efficiency double-Boost bridge-free PFC converter
CN105356739A (en) * 2014-08-21 2016-02-24 艾默生网络能源有限公司 Control method and device of totem bridgeless power factor correction (PFC) circuit and rectification circuit
CN106026630A (en) * 2016-05-18 2016-10-12 浙江大学 Variable-modal bridgeless PFC circuit
CN112787497A (en) * 2021-01-28 2021-05-11 三峡大学 Single-phase three-level power factor correction circuit with Z-shaped bridge structure
US20240305191A1 (en) * 2022-03-04 2024-09-12 Innoscience (suzhou) Semiconductor Co., Ltd. Nitride-based power factor correction circuit and method for implementing the same

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CN106026630A (en) * 2016-05-18 2016-10-12 浙江大学 Variable-modal bridgeless PFC circuit
CN112787497A (en) * 2021-01-28 2021-05-11 三峡大学 Single-phase three-level power factor correction circuit with Z-shaped bridge structure
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US12132396B2 (en) * 2022-03-04 2024-10-29 Innoscience (suzhou) Semiconductor Co., Ltd. Nitride-based power factor correction circuit and method for implementing the same

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