CN214411203U - High-power triode of integrated circuit - Google Patents
High-power triode of integrated circuit Download PDFInfo
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- CN214411203U CN214411203U CN202120528880.5U CN202120528880U CN214411203U CN 214411203 U CN214411203 U CN 214411203U CN 202120528880 U CN202120528880 U CN 202120528880U CN 214411203 U CN214411203 U CN 214411203U
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- Prior art keywords
- pole
- conducting strip
- packaging body
- triode
- utmost point
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- 238000004806 packaging method and process Methods 0.000 claims abstract description 32
- 238000009413 insulation Methods 0.000 claims abstract description 11
- 239000000919 ceramic Substances 0.000 claims abstract description 10
- WOCIAKWEIIZHES-UHFFFAOYSA-N ruthenium(iv) oxide Chemical compound O=[Ru]=O WOCIAKWEIIZHES-UHFFFAOYSA-N 0.000 claims description 6
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 3
- 229910001252 Pd alloy Inorganic materials 0.000 claims description 3
- 229910052799 carbon Inorganic materials 0.000 claims description 3
- SWELZOZIOHGSPA-UHFFFAOYSA-N palladium silver Chemical compound [Pd].[Ag] SWELZOZIOHGSPA-UHFFFAOYSA-N 0.000 claims description 3
- 238000005538 encapsulation Methods 0.000 abstract description 3
- 238000003466 welding Methods 0.000 description 3
- 239000006185 dispersion Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012856 packing Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 230000003245 working effect Effects 0.000 description 1
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Abstract
The utility model provides a high-power triode of an integrated circuit, which comprises an insulation packaging body, a triode chip, an E pole conducting strip, a C pole conducting strip and a B pole conducting strip, wherein an insulation ceramic plate positioned in the insulation packaging body is arranged on the B pole conducting strip, a resistance layer is covered on the insulation ceramic plate, two ends of the resistance layer are respectively connected with a first electrode layer and a second electrode layer, and one end of the first electrode, which is far away from the resistance layer, is conductively connected with the B pole conducting strip; the emitting electrode of the triode chip is welded on the E pole conducting strip, the collecting electrode of the triode chip is connected with the C pole conducting strip through the first conducting wire, and the base electrode of the triode chip is connected with the second electrode layer through the second conducting wire. The utility model discloses have higher biasing resistance, can be applied to during powerful product circuit, the integrated encapsulation of resistance structure is in insulating packaging body, and overall structure is compact, and can also reduce the use of resistance in the product circuit, can save the space of the PCB board of using.
Description
Technical Field
The utility model relates to a triode specifically discloses an integrated circuit's high-power triode.
Background
The triode is a semiconductor triode which has the function of amplifying a weak signal into a larger signal with an amplitude value and is also used as a contactless switch.
The triode is formed through using the encapsulation of triode chip, and when being applied to the product circuit of heavy current, triode among the prior art is burnt out by the easy, for avoiding being burnt out, establishes ties between the base of triode and product circuit usually and sets up resistance, though this kind of mode can reduce the probability that the triode was burnt out, needs additionally to set up resistance in the product circuit, is unfavorable for the miniaturized design of product.
SUMMERY OF THE UTILITY MODEL
Therefore, it is necessary to provide a high power transistor of an integrated circuit, which has a high bias resistance, can input a large current, and can save the space of the applied PCB.
In order to solve the prior art problem, the utility model discloses a high-power triode of an integrated circuit, which comprises an insulation packaging body, a triode chip, an E pole conducting strip, a C pole conducting strip and a B pole conducting strip, wherein an insulation ceramic plate positioned in the insulation packaging body is arranged on the B pole conducting strip;
the emitting electrode of the triode chip is welded on the E pole conducting strip, the collecting electrode of the triode chip is connected with the C pole conducting strip through the first conducting wire, and the base electrode of the triode chip is connected with the second electrode layer through the second conducting wire.
Furthermore, the E pole conducting strip comprises an E pole platform part, an E pole inclined part and an E pole contact part which are sequentially connected, the E pole platform part is positioned in the insulating packaging body, the E pole contact part is positioned outside the insulating packaging body, the E pole inclined part penetrates through the side wall of the insulating packaging body, and the emitting electrode of the triode chip is connected to the E pole platform part; the C pole conducting strip comprises a C pole platform part, a C pole inclined part and a C pole contact part which are sequentially connected, the C pole platform part is positioned in the insulating packaging body, the C pole contact part is positioned outside the insulating packaging body, the C pole inclined part penetrates through the side wall of the insulating packaging body, and the first lead is connected to the C pole platform part; the B pole conducting strip comprises a B pole platform part, a B pole inclined part and a B pole contact part which are sequentially connected, the B pole platform part is located in the insulating packaging body, the B pole contact part is located outside the insulating packaging body, the B pole inclined part penetrates through the side wall of the insulating packaging body, and the second wire is connected to the B pole platform part.
Further, the E pole contact portion, the C pole contact portion and the B pole contact portion are all bent U-shaped structures.
Furthermore, the E pole contact part is provided with an E pole yielding hole, the C pole contact part is provided with a C pole yielding hole, and the B pole contact part is provided with a B pole yielding hole.
Further, the resistance layer is a ruthenium dioxide layer or a carbon film layer.
Further, the first electrode layer and the second electrode layer are silver palladium alloy layers.
The utility model has the advantages that: the utility model discloses an integrated circuit's high-power triode is provided with reliable resistance structure and establishes ties between triode chip's base and the B utmost point conducting strip, has higher biasing resistance, can input the electric current big, can be applied to during powerful product circuit, the integrated encapsulation of resistance structure is in insulating packaging body, overall structure is compact, the triode size of packing can not increase basically, and can also reduce the use of resistance in the product circuit, can save the space of the PCB board of using.
Drawings
Fig. 1 is a schematic top view of the present invention.
Fig. 2 is a schematic view of the three-dimensional structure of the hidden insulating package of the present invention.
The reference signs are: the triode chip comprises an insulating package body 10, a triode chip 20, a first lead 21, a second lead 22, an E pole conducting strip 30, an E pole platform part 31, an E pole inclined part 32, an E pole contact part 33, an E pole abdicating hole 331, a C pole conducting strip 40, a C pole platform part 41, a C pole inclined part 42, a C pole contact part 43, a C pole abdicating hole 431, a B pole conducting strip 50, a B pole platform part 51, a B pole inclined part 52, a B pole contact part 53, a B pole abdicating hole 531, an insulating ceramic plate 60, a resistance layer 61, a first electrode layer 62 and a second electrode layer 63.
Detailed Description
For further understanding of the features and technical means of the present invention, as well as the specific objects and functions attained by the present invention, the present invention will be described in further detail with reference to the accompanying drawings and detailed description.
Refer to fig. 1 and 2.
The embodiment of the utility model discloses a high-power triode of integrated circuit, including insulating packaging body 10, triode chip 20, E utmost point conducting strip 30, C utmost point conducting strip 40 and B utmost point conducting strip 50, preferably, triode chip 20 is high-power triode chip, triode chip 20 is located insulating packaging body 10, E utmost point conducting strip 30, C utmost point conducting strip 40 and B utmost point conducting strip 50 all have a part to be located insulating packaging body 10, be equipped with insulating ceramic plate 60 that is located insulating packaging body 10 on B utmost point conducting strip 50, insulating ceramic plate 60 coats and is stamped resistive layer 61, insulating ceramic plate 60 can effectively improve the heat dispersion of integrated resistance, can also effectively improve the heat dispersion and the working property of overall structure, the both ends of resistive layer 61 are connected with first electrode layer 62 and second electrode layer 63 respectively, the one end that first electrode kept away from resistive layer 61 is connected with B utmost point 50 electricity conduction, preferably, one end of the first electrode, which is far away from the resistive layer 61, is connected with the B-pole conductive sheet 50 in a welding manner, and the second electrode layer 63 is not in contact with the B-pole conductive sheet 50;
an emitter electrode, namely an E electrode, of the triode chip 20 is welded on the E electrode conducting strip 30, a collector electrode, namely a C electrode, of the triode chip 20 is connected with the C electrode conducting strip 40 through a first wire 21, a base electrode, namely a B electrode, of the triode chip 20 is connected with a second electrode layer 63 through a second wire 22, and the resistor layer 61, the first electrode layer 62, the second electrode layer 63, the first wire 21 and the second wire 22 are all located in the insulating packaging body 10.
The utility model discloses an internal integration has the resistance structure, and triode chip 20's base passes through second electrode layer 63, resistance layer 61 and first electrode layer 62 and realizes conducting connection with B utmost point conducting strip 50, can effectively increase the biasing resistance of triode, can play the effect of current-limiting to the triode, can effectively avoid the triode to be burnt out; the utility model discloses when being applied to the product circuit, can effectively improve the maximum current that the product circuit can pass, can adapt to powerful product circuit, application scope is wide. The resistor is integrally packaged in the insulating packaging body 10, the overall structure is compact, the size of the packaged triode cannot be increased basically, and when the resistor is applied to a PCB, the use of the resistor can be effectively reduced, so that the space of the PCB is effectively saved, the layout difficulty can be effectively reduced, more electronic elements can be mounted on the PCB, and the resistor is stable and reliable in overall structure and good in heat dissipation performance.
In the present embodiment, the E-pole conductive sheet 30 includes an E-pole terrace portion 31, an E-pole inclined portion 32 and an E-pole contact portion 33, which are connected in sequence, preferably, the E-pole terrace portion 31, the E-pole inclined portion 32 and the E-pole contact portion 33 are an integrally formed structure, the E-pole terrace portion 31 is located in the insulating package 10, the E-pole contact portion 33 is located outside the insulating package 10, the E-pole inclined portion 32 penetrates through a sidewall of the insulating package 10, and an emitter of the triode chip 20 is connected to the E-pole terrace portion 31; the C-pole conductive sheet 40 includes a C-pole terrace 41, a C-pole inclined portion 42 and a C-pole contact portion 43 which are connected in sequence, preferably, the C-pole terrace 41, the C-pole inclined portion 42 and the C-pole contact portion 43 are an integrally formed structure, the C-pole terrace 41 is located in the insulating package body 10, the C-pole contact portion 43 is located outside the insulating package body 10, the C-pole inclined portion 42 penetrates through a side wall of the insulating package body 10, and the first wire 21 is connected to the C-pole terrace 41; the B-pole conductive sheet 50 includes a B-pole terrace 51, a B-pole inclined portion 52 and a B-pole contact portion 53 connected in sequence, preferably, the B-pole terrace 51, the B-pole inclined portion 52 and the B-pole contact portion 53 are an integrally formed structure, the B-pole terrace 51 is located in the insulating package 10, the B-pole contact portion 53 is located outside the insulating package 10, the B-pole inclined portion 52 penetrates through a sidewall of the insulating package 10, and the second wire 22 is connected to the B-pole terrace 51.
Based on the above embodiment, the E-pole contact portion 33, the C-pole contact portion 43, and the B-pole contact portion 53 are all U-shaped structures bent downward or upward, when the electronic device is welded and mounted on the PCB, the bottom protruding positions of the E-pole contact portion 33, the C-pole contact portion 43, and the B-pole contact portion 53 contact with the pads in the PCB, that is, the contact portions are not connected in a completely tight manner with the pads, so that the volume capable of accommodating solder can be effectively increased, and the stability of the welding can be effectively increased.
In the embodiment, the E pole contact portion 33 is provided with an E pole relief hole 331, the C pole contact portion 43 is provided with a C pole relief hole 431, and the B pole contact portion 53 is provided with a B pole relief hole 531, which can further provide a pressure relief path for the contact portion, thereby effectively improving the stability of the welding installation effect.
In the present embodiment, the resistance layer 61 is a ruthenium dioxide layer or a carbon film layer, and is fixed on the insulating ceramic plate 60 by magnetron sputtering or the like.
In the present embodiment, the first electrode layer 62 and the second electrode layer 63 are both silver-palladium alloy layers, which can effectively ensure the conductivity and corrosion resistance of the electrode layers.
The above-mentioned embodiments only represent some embodiments of the present invention, and the description thereof is specific and detailed, but not to be construed as limiting the scope of the present invention. It should be noted that, for those skilled in the art, without departing from the spirit of the present invention, several variations and modifications can be made, which are within the scope of the present invention. Therefore, the protection scope of the present invention should be subject to the appended claims.
Claims (6)
1. A high-power triode of an integrated circuit comprises an insulation packaging body (10), a triode chip (20), an E pole conducting strip (30), a C pole conducting strip (40) and a B pole conducting strip (50), and is characterized in that an insulation ceramic plate (60) located in the insulation packaging body (10) is arranged on the B pole conducting strip (50), a resistance layer (61) covers the insulation ceramic plate (60), two ends of the resistance layer (61) are respectively connected with a first electrode layer (62) and a second electrode layer (63), and one end, far away from the resistance layer (61), of the first electrode is in conductive connection with the B pole conducting strip (50);
the emitter of the triode chip (20) is welded on the E pole conducting strip (30), the collector of the triode chip (20) is connected with the C pole conducting strip (40) through a first lead (21), and the base of the triode chip (20) is connected with the second electrode layer (63) through a second lead (22).
2. The high power triode of claim 1, wherein the E-pole conducting strip (30) comprises an E-pole platform part (31), an E-pole inclined part (32) and an E-pole contact part (33) which are connected in sequence, the E-pole platform part (31) is positioned in the insulating packaging body (10), the E-pole contact part (33) is positioned outside the insulating packaging body (10), the E-pole inclined part (32) penetrates through the side wall of the insulating packaging body (10), and the emitter of the triode chip (20) is connected to the E-pole platform part (31); the C pole conducting strip (40) comprises a C pole platform part (41), a C pole inclined part (42) and a C pole contact part (43) which are sequentially connected, the C pole platform part (41) is located in the insulating packaging body (10), the C pole contact part (43) is located outside the insulating packaging body (10), the C pole inclined part (42) penetrates through the side wall of the insulating packaging body (10), and the first lead (21) is connected to the C pole platform part (41); b utmost point conducting strip (50) are including the B utmost point platform portion (51), B utmost point rake (52) and the B utmost point contact site (53) that connect gradually, B utmost point platform portion (51) are located in insulating packaging body (10), B utmost point contact site (53) are located outside insulating packaging body (10), B utmost point rake (52) run through the lateral wall of insulating packaging body (10), second wire (22) connect in on the B utmost point platform portion (51).
3. The power transistor of claim 2, wherein said E-contact (33), said C-contact (43), and said B-contact (53) are each of a bent U-shaped configuration.
4. A power transistor according to claim 2 or 3, wherein the E-pole contact portion (33) has an E-pole relief hole (331), the C-pole contact portion (43) has a C-pole relief hole (431), and the B-pole contact portion (53) has a B-pole relief hole (531).
5. The integrated circuit power transistor of claim 1, wherein the resistive layer (61) is a ruthenium dioxide layer or a carbon film layer.
6. The power transistor of claim 1, wherein said first electrode layer (62) and said second electrode layer (63) are both silver palladium alloy layers.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202120528880.5U CN214411203U (en) | 2021-03-12 | 2021-03-12 | High-power triode of integrated circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202120528880.5U CN214411203U (en) | 2021-03-12 | 2021-03-12 | High-power triode of integrated circuit |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN214411203U true CN214411203U (en) | 2021-10-15 |
Family
ID=78029028
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202120528880.5U Active CN214411203U (en) | 2021-03-12 | 2021-03-12 | High-power triode of integrated circuit |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN214411203U (en) |
-
2021
- 2021-03-12 CN CN202120528880.5U patent/CN214411203U/en active Active
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| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| TR01 | Transfer of patent right | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20231109 Address after: 523430 Building 1 and 2, No. 70, Liaobu Baiye Road, Liaobu Town, Dongguan City, Guangdong Province Patentee after: Xianzhike semiconductor technology (Dongguan) Co.,Ltd. Address before: 523430 Room 102, building 1, 76 Baiye Road, Liaobu Town, Dongguan City, Guangdong Province Patentee before: Mutual Creation (Dongguan) Electronic Technology Co.,Ltd. |