CN214361831U - Device for simultaneously and accurately controlling growth of multiple aluminum nitride crystals - Google Patents
Device for simultaneously and accurately controlling growth of multiple aluminum nitride crystals Download PDFInfo
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- CN214361831U CN214361831U CN202120486832.4U CN202120486832U CN214361831U CN 214361831 U CN214361831 U CN 214361831U CN 202120486832 U CN202120486832 U CN 202120486832U CN 214361831 U CN214361831 U CN 214361831U
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Abstract
A device for simultaneously and accurately controlling the growth of a plurality of aluminum nitride crystals belongs to the field of crystal growth. The utility model discloses an including base, lower heater, cyclic annular lateral wall heater, top heater and crucible, the base includes bottom plate, support and heat-conducting plate, installs the support on the bottom plate, and the heat-conducting plate is installed at the support top, and the crucible is installed at the heat-conducting plate top, and lower heater suit is in the support outside and with the installation of laminating of heat-conducting plate bottom, and the top heater passes through the support to be connected with the base establishment, and the top heater is arranged at the crucible top, and cyclic annular lateral wall heater passes through the telescopic link and establishes with the base to be connected, and the crucible is arranged inside cyclic annular lateral wall heater. The purpose is lower in order to solve crystal growth's mode output, does not accomplish the problem of each warm area accurate control in the heat field, the utility model discloses realize same heat, a plurality of crystals grow simultaneously to guaranteed crystal growth's temperature gradient condition, simple structure, design benefit, convenient operation, low cost are suitable for and use widely.
Description
Technical Field
The utility model relates to a device for simultaneously and accurately controlling the growth of a plurality of aluminum nitride crystals, which belongs to the field of crystal growth.
Background
Crystal growth is the process by which a substance forms crystals from a gas phase, a liquid phase or a solid phase under specific physical and chemical conditions. The human beings can sun cure salt and make sugar thousands of years ago. Artificially imitating natural minerals and successfully synthesized for the first time is corundum gemstones-french chemist a. Verner leaf has been tested in about 1890 years to grow gemstones by melting alumina powder with oxyhydrogen flame, and this method has been used up to now as the main method for growing jewel-type ornaments for bearings. After world war II, the natural crystal is regarded as strategic material to attract people's attention, and scientists invented the artificial crystal grown by the hydrothermal method. The diamond is synthesized under ultrahigh pressure, and important minerals such as mica with complex components grow under high temperature condition to supplement the deficiency of natural minerals. In the 50 s of the 20 th century, the growth of germanium and silicon single crystals was successful, and the development of semiconductor technology and electronic industry was promoted. In the 60 s of the 20 th century, ruby and yttrium aluminum garnet single crystals were developed, which laid a firm foundation for laser technology.
At present, the crystal growth of the PVT method can only be carried out once, so that the yield of the crystal growth mode is lower, and the accurate control of each temperature area in a thermal field cannot be realized by the conventional PVT method heater and a plurality of single heaters. The difficulty and precision of crystal growth are high.
Therefore, it is desirable to provide an apparatus for simultaneously and precisely controlling the growth of a plurality of aluminum nitride crystals to solve the above-mentioned problems.
SUMMERY OF THE UTILITY MODEL
The utility model discloses the research and development purpose is lower in order to solve the mode output of crystal growth, and the problem of each warm area accurate control in the thermal field can't be accomplished, has given about in the following the utility model discloses a brief summary to provide about the utility model discloses a basic understanding of some aspects. It should be understood that this summary is not an exhaustive overview of the invention. It is not intended to identify key or critical elements of the invention or to delineate the scope of the invention.
The technical scheme of the utility model:
the utility model provides a device that a plurality of aluminum nitride crystal of accurate control grow simultaneously, includes base, lower heater, cyclic annular lateral wall heater, top heater and crucible, the base includes bottom plate, support and heat-conducting plate, installs the support on the bottom plate, and the heat-conducting plate is installed at the support top, and the crucible is installed at the heat-conducting plate top, and lower heater suit is in the support outside and with the installation of laminating of heat-conducting plate bottom, and the top heater passes through the support and establishes with the base to be connected, and the top heater is arranged at the crucible top, and cyclic annular lateral wall heater passes through the telescopic link and establishes with the base to be connected, and the crucible is arranged inside cyclic annular lateral wall heater.
The utility model discloses a when solving crystal growth, each warm area accurate control's of thermal field problem in the crucible is proposed the technical scheme of the utility model is:
the utility model provides a device that a plurality of aluminum nitride crystal of accurate control grow simultaneously, includes base, lower heater, cyclic annular lateral wall heater, top heater and crucible, the base includes bottom plate, support and heat-conducting plate, installs the support on the bottom plate, and the heat-conducting plate is installed at the support top, and the crucible is installed at the heat-conducting plate top, and lower heater suit is in the support outside and with the installation of laminating of heat-conducting plate bottom, and the top heater passes through the support and establishes with the base to be connected, and the top heater is arranged at the crucible top, and cyclic annular lateral wall heater passes through the telescopic link and establishes with the base to be connected, and the crucible is arranged inside cyclic annular lateral wall heater.
Preferably: the annular side wall heater comprises an upper annular side wall heater and a lower annular side wall heater, the lower annular side wall heater is sleeved inside the upper annular side wall heater, the left side and the right side of the upper annular side wall heater and the left side and the right side of the lower annular side wall heater are both installed on the base through telescopic rods, and the crucible is arranged inside the annular side wall heater.
Preferably: the crucible is provided with first growth chamber, second growth chamber and raw materials room, and first growth chamber, second growth chamber and raw materials room are hollow cylindric cavity structures, and first growth chamber and second growth chamber are installed at raw materials roof portion, and first growth chamber and second growth chamber set up with the inside cavity intercommunication of raw materials room, and first growth chamber and second growth roof portion all have an upper cover.
Preferably: the top heater comprises a top upper cover heater, an inner side heater and a support, the upper cover heater and the inner side heater are both mounted at the top of the support through telescopic rods, the bottom of the support is mounted on the base, a through hole is formed in the center of the upper cover heater, and the inner side heater penetrates through the through hole and then is arranged between the first growth chamber and the second growth chamber.
Preferably: the lower heater and the top heater are both electric heating plates, and the annular side wall heater is an annular electric heating plate.
The utility model discloses a solve the problem of heater lift adjustment, its technical scheme is:
the utility model provides a device that a plurality of aluminum nitride crystal of accurate control grow simultaneously, includes base, lower heater, cyclic annular lateral wall heater, top heater and crucible, the base includes bottom plate, support and heat-conducting plate, installs the support on the bottom plate, and the heat-conducting plate is installed at the support top, and the crucible is installed at the heat-conducting plate top, and lower heater suit is in the support outside and with the installation of laminating of heat-conducting plate bottom, and the top heater passes through the support and establishes with the base to be connected, and the top heater is arranged at the crucible top, and cyclic annular lateral wall heater passes through the telescopic link and establishes with the base to be connected, and the crucible is arranged inside cyclic annular lateral wall heater.
Preferably: the telescopic link is sharp electric telescopic handle, the telescopic link includes rotating electrical machines, the casing down, go up the casing, lead screw flange bearing, the lead screw, the guide slide rail, the guide slider, initiative bevel gear and driven bevel gear, it sets up inside the casing down to go up the casing, the casing is open-top shell structure down, it is bottom open-ended shell structure to go up the casing, the internal rotating electrical machines of installing of casing down, rotating electrical machines's output and initiative bevel gear cooperation installation, initiative bevel gear and driven bevel gear meshing installation, driven bevel gear installs on the lead screw, the lead screw bottom is installed inside the casing down through the bearing, go up the casing bottom and pass through lead screw flange bearing and lead screw cooperation installation, the guide slide rail is installed at casing inside wall down, lead screw flange bearing lateral wall is through guide slider and guide slide rail sliding fit installation.
The utility model discloses following beneficial effect has:
1. the device for simultaneously and accurately controlling the growth of a plurality of aluminum nitride crystals realizes the simultaneous growth of a plurality of crystals in the same heat, and ensures the temperature gradient condition of the crystal growth;
2. the lower heater, the annular side wall heater and the top heater of the utility model are provided with a plurality of heaters, which can realize that the heated object is heated to the designated temperature quickly, realize the low temperature state that the crystal can not grow by the PVT method, and avoid the occurrence of excessive impurities and defects;
3. the utility model discloses a device for simultaneously and accurately controlling the growth of a plurality of aluminum nitride crystals, the heating mode of a heater can be controlled at will, the temperature field requirements of each stage of crystal growth are realized, and different temperature gradients are realized at different periods of crystal growth;
4. the utility model discloses a device for simultaneously and accurately controlling the growth of a plurality of aluminum nitride crystals obtains better crystal growth conditions, realizes the optimal design of large-size PVT method crystal growth, and the lower heater, the annular side wall heater and the top heater have different power supplies respectively, and can further regulate and control the distribution state of the temperature field through the difference of the power supply size, thereby realizing the adjustment of accurate temperature field distribution;
5. the utility model discloses a device that a plurality of aluminium nitride crystal of simultaneous accurate control grows simple structure, design benefit, convenient operation, low cost are suitable for and use widely.
Drawings
FIG. 1 is a perspective view of an apparatus for simultaneously and precisely controlling the growth of a plurality of aluminum nitride crystals;
FIG. 2 is a front view of an apparatus for simultaneously and precisely controlling the growth of a plurality of aluminum nitride crystals;
FIG. 3 is a top view of FIG. 2;
FIG. 4 is a cross-sectional view of FIG. 2;
FIG. 5 is a schematic view of the telescoping pole;
FIG. 6 is a schematic view of a crucible structure;
FIG. 7 is a schematic structural view of a third embodiment;
in the figure, 1-base, 2-lower heater, 3-annular side wall heater, 4-top heater, 5-crucible, 6-telescopic rod, 10-bottom plate, 11-support, 12-heat conducting plate, 31-upper annular side wall heater, 32-lower annular side wall heater, 41-top upper cover heater, 42-inner side heater, 43-support, 411-through hole, 51-first growth chamber, 52-second growth chamber, 53-raw material chamber, 54-upper cover, 55-aluminum nitride raw material, 56-seed crystal, 61-rotating motor, 62-lower shell, 63-upper shell, 64-lead screw flange bearing, 65-lead screw, 66-guide slide rail, 67-guide slide block, 68-drive bevel gear, 69-driven bevel gear, 610-bearing.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention will be described below with reference to specific embodiments shown in the accompanying drawings. It should be understood that the description is intended to be illustrative only and is not intended to limit the scope of the present invention. Moreover, in the following description, descriptions of well-known structures and techniques are omitted so as to not unnecessarily obscure the concepts of the present invention.
The utility model discloses the connection that mentions divide into fixed connection and can dismantle the connection, fixed connection is for the conventional fixed connection mode such as undetachable connection including but not limited to hem connection, rivet connection, adhesive connection and welded connection, can dismantle the connection including but not limited to conventional dismantlement modes such as threaded connection, buckle connection, pin joint and hinged joint, when not clearly prescribing a limit to concrete connection mode, acquiesces to always can find at least one kind of connected mode in current connected mode and can realize this function, and the technical staff in the art can select by oneself as required. For example: the fixed connection selects welding connection, and the detachable connection selects hinge connection.
The first embodiment is as follows: the embodiment is described by combining fig. 1-6, the device for simultaneously and accurately controlling the growth of a plurality of aluminum nitride crystals of the embodiment comprises a base 1, a lower heater 2, a ring-shaped side wall heater 3, a top heater 4 and a crucible 5, wherein the base 1 comprises a bottom plate 10, a support 11 and a heat conducting plate 12, the support 11 is installed on the bottom plate 10, the heat conducting plate 12 is installed on the top of the support 11, the crucible 5 is installed on the top of the heat conducting plate 12, the lower heater 2 is sleeved outside the support 11 and is attached to the bottom of the heat conducting plate 12, the top heater 4 is connected with the base 1 through a support 43, the top heater 4 is arranged on the top of the crucible 5, the ring-shaped side wall heater 3 is connected with the bottom plate 10 through a telescopic rod 6, the crucible 5 is arranged inside the ring-shaped side wall heater 3, the lower heater 2 transfers heat to the heat conducting plate 12, the heat conducting plate 12 is transferred to the crucible 5, this allows for more uniform heating.
The second embodiment is as follows: the present embodiment is described with reference to fig. 1 to fig. 6, and based on the first embodiment, the apparatus for simultaneously and precisely controlling the growth of a plurality of aluminum nitride crystals of the present embodiment includes an upper annular sidewall heater 31 and a lower annular sidewall heater 32, the lower annular sidewall heater 32 is sleeved inside the upper annular sidewall heater 31, both left and right sides of the upper annular sidewall heater 31 and the lower annular sidewall heater 32 are mounted on the base 1 through the telescopic rod 6, the crucible 5 is disposed inside the annular sidewall heater 3, the upper annular sidewall heater 31 and the lower annular sidewall heater 32 respectively heat the upper sidewall and the lower sidewall of the crucible 5, so as to ensure a corresponding appropriate temperature gradient and achieve an ideal temperature gradient condition.
The third concrete implementation mode: referring to fig. 1-7, the present embodiment is described, and based on the first embodiment, the crucible 5 of the present embodiment is provided with a first growth chamber 51, a second growth chamber 52 and a raw material chamber 53, the first growth chamber 51, the second growth chamber 52 and the raw material chamber 53 are all hollow cylindrical cavity structures, the first growth chamber 51 and the second growth chamber 52 are installed on the top of the raw material chamber 53, the first growth chamber 51 and the second growth chamber 52 are arranged to communicate with the inner cavity of the raw material chamber 53, and the top of each of the first growth chamber 51 and the second growth chamber 52 is provided with an upper cover 54.
More preferably, the growth chamber may be provided in plurality, in addition to two of the first growth chamber 51 and the second growth chamber 52, the plurality of growth chambers are annularly distributed on the top of the material chamber 53, the inner side heater 42 is provided at the annular center, the purpose of which is to perform temperature compensation on the inner side wall, the schematic plan view of the structure is shown in fig. 7, the material chamber 53 is provided with an aluminum nitride material 55, and the top of the growth chamber is provided with a seed crystal 56, the purpose of which is to perform crystal growth simultaneously by the plurality of seed crystals 56, thereby improving growth efficiency and saving energy.
The fourth concrete implementation mode: the embodiment is described with reference to fig. 1-6, and the apparatus for simultaneously and precisely controlling the growth of a plurality of aluminum nitride crystals of the embodiment comprises a top heater 4, an inner heater 42 and a support 43, wherein the top heater 41 and the inner heater 42 are both mounted on the top of the support 43 through an expansion rod 6, the bottom of the support 43 is mounted on a base 1, a through hole 411 is formed in the center of the top heater 41, the inner heater 42 is arranged between a first growth chamber 51 and a second growth chamber 52 after passing through the through hole 411, the top heater 41 performs temperature compensation on the top of a crucible, and the inner heater 42 performs temperature compensation on the inner side walls of the two growth chambers.
The fifth concrete implementation mode: the present embodiment is described with reference to fig. 1 to 6, and the apparatus for simultaneously and precisely controlling the growth of a plurality of aluminum nitride crystals of the present embodiment is a linear electric telescopic rod, the telescopic rod 6 includes a rotary motor 61, a lower housing 62, an upper housing 63, a lead screw flange bearing 64, a lead screw 65, a guide slide rail 66, a guide slider 67, a drive bevel gear 68 and a driven bevel gear 69, the upper housing 63 is disposed inside the lower housing 62, the lower housing 62 is a housing structure with an open top, the upper housing 63 is a housing structure with an open bottom, the lower housing 62 is internally provided with the rotary motor 61, an output end of the rotary motor 61 is installed in cooperation with the drive bevel gear 68, the drive bevel gear 68 is installed in engagement with the driven bevel gear 69, the driven bevel gear 69 is installed on the lead screw 65, the bottom of the lead screw 65 is installed inside the lower housing 62 through a bearing 610, the bottom of the upper housing 63 is installed in cooperation with the lead screw 65 through the lead screw flange bearing 64, the guide slide rail 66 is arranged on the inner side wall of the lower shell 62, the side wall of the lead screw flange bearing 64 is arranged in a sliding fit with the guide slide rail 66 through a guide slide block 67, the output end of the rotating motor 61 drives the driving bevel gear 68 to rotate, the driving bevel gear 68 drives the driven bevel gear 69 to rotate, the driven bevel gear 69 drives the lead screw 65 to rotate, the upper shell 63 is driven by the lead screw 65 to realize lifting movement through the lead screw flange bearing 64, and the guide slide block 67 slides on the guide slide rail 66 to play a role in radial limiting and guiding;
more preferably, the telescopic rod 6 can be a mechanical telescopic rod with a telescopic locking function disclosed in the prior art, besides a linear electric telescopic rod.
The sixth specific implementation mode: the present embodiment is described with reference to fig. 1 to 6, and the apparatus for simultaneously and precisely controlling the growth of a plurality of aluminum nitride crystals of the present embodiment includes an electric heating plate for the lower heater 2 and the top heater 4, an electric heating plate for the annular sidewall heater 3, and an electric heating plate and an annular electric heating plate for adjusting the temperature.
It is noted that the terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of example embodiments according to the present application. As used herein, the singular forms "a", "an" and "the" are intended to include the plural forms as well, and it should be understood that when the terms "comprises" and/or "comprising" are used in this specification, they specify the presence of stated features, steps, operations, devices, components, and/or combinations thereof, unless the context clearly indicates otherwise.
The relative arrangement of the components and steps, the numerical expressions and numerical values set forth in these embodiments do not limit the scope of the present invention unless specifically stated otherwise. Meanwhile, it should be understood that the sizes of the respective portions shown in the drawings are not drawn in an actual proportional relationship for the convenience of description. Techniques, methods, and apparatus known to those of ordinary skill in the relevant art may not be discussed in detail but are intended to be part of the specification where appropriate. In all examples shown and discussed herein, any particular value should be construed as merely illustrative, and not limiting. Thus, other examples of the exemplary embodiments may have different values. It should be noted that: like reference numbers and letters refer to like items in the following figures, and thus, once an item is defined in one figure, further discussion thereof is not required in subsequent figures.
In the description of the present invention, it is to be understood that the orientation or positional relationship indicated by the orientation words such as "front, rear, upper, lower, left, right", "lateral, vertical, horizontal" and "top, bottom", etc. are usually based on the orientation or positional relationship shown in the drawings, and are only for convenience of description and simplicity of description, and in the case of not making a reverse description, these orientation words do not indicate and imply that the device or element being referred to must have a specific orientation or be constructed and operated in a specific orientation, and therefore, should not be considered as limiting the scope of the present invention; the terms "inner and outer" refer to the inner and outer relative to the profile of the respective component itself.
Spatially relative terms, such as "above … …," "above … …," "above … …," "above," and the like, may be used herein for ease of description to describe one device or feature's spatial relationship to another device or feature as illustrated in the figures. It will be understood that the spatially relative terms are intended to encompass different orientations of the device in use or operation in addition to the orientation depicted in the figures. For example, if a device in the figures is turned over, devices described as "above" or "on" other devices or configurations would then be oriented "below" or "under" the other devices or configurations. Thus, the exemplary term "above … …" can include both an orientation of "above … …" and "below … …". The device may be otherwise variously oriented (rotated 90 degrees or at other orientations) and the spatially relative descriptors used herein interpreted accordingly.
It should be noted that the terms "first," "second," and the like in the description and claims of this application and in the drawings described above are used for distinguishing between similar elements and not necessarily for describing a particular sequential or chronological order. It is to be understood that the data so used is interchangeable under appropriate circumstances such that the embodiments of the application described herein are capable of operation in sequences other than those illustrated or described herein.
It should be noted that, in the above embodiments, as long as the technical solutions can be aligned and combined without contradiction, those skilled in the art can exhaust all possibilities according to the mathematical knowledge of the alignment and combination, and therefore, the present invention does not describe the technical solutions after alignment and combination one by one, but it should be understood that the technical solutions after alignment and combination have been disclosed by the present invention.
The above description is only a preferred embodiment of the present invention and is not intended to limit the present invention, and various modifications and changes may be made by those skilled in the art. Any modification, equivalent replacement, or improvement made within the spirit and principle of the present invention should be included in the protection scope of the present invention.
Claims (6)
1. An apparatus for simultaneously and accurately controlling the growth of a plurality of aluminum nitride crystals, characterized in that: including base (1), lower heater (2), cyclic annular lateral wall heater (3), top heater (4) and crucible (5), base (1) includes bottom plate (10), support (11) and heat-conducting plate (12), install support (11) on bottom plate (10), heat-conducting plate (12) are installed at support (11) top, crucible (5) are installed at heat-conducting plate (12) top, lower heater (2) suit is in support (11) outside and with the installation of laminating of heat-conducting plate (12) bottom, top heater (4) are established through support (43) and are connected with base (1), top heater (4) are arranged at crucible (5) top, cyclic annular lateral wall heater (3) are established through telescopic link (6) and are connected with bottom plate (10), crucible (5) are arranged inside cyclic annular lateral wall heater (3).
2. The apparatus of claim 1, wherein the apparatus is configured to control the growth of a plurality of aluminum nitride crystals simultaneously and precisely: the annular side wall heater (3) comprises an upper annular side wall heater (31) and a lower annular side wall heater (32), the lower annular side wall heater (32) is sleeved inside the upper annular side wall heater (31), and the left side and the right side of the upper annular side wall heater (31) and the lower annular side wall heater (32) are both installed on the base (1) through the telescopic rods (6).
3. The apparatus of claim 1, wherein the apparatus is configured to control the growth of a plurality of aluminum nitride crystals simultaneously and precisely: crucible (5) are provided with first growth chamber (51), second growth chamber (52) and raw materials room (53), and first growth chamber (51), second growth chamber (52) and raw materials room (53) are hollow cylindric cavity structures, and first growth chamber (51) and second growth chamber (52) are installed at raw materials room (53) top, and the inside cavity intercommunication setting of first growth chamber (51) and second growth chamber (52) and raw materials room (53), and first growth chamber (51) and second growth chamber (52) top all have an upper cover (54).
4. The apparatus of claim 3, wherein the apparatus is further configured to control the growth of a plurality of aluminum nitride crystals simultaneously and precisely: the top heater (4) comprises a top upper cover heater (41), an inner side heater (42) and a support (43), the upper cover heater (41) and the inner side heater (42) are all installed at the top of the support (43) through an expansion rod (6), the bottom of the support (43) is installed on the base (1), a through hole (411) is formed in the center of the upper cover heater (41), and the inner side heater (42) penetrates through the through hole (411) and then is arranged between the first growth chamber (51) and the second growth chamber (52).
5. The apparatus for simultaneously and precisely controlling the growth of a plurality of aluminum nitride crystals according to any one of claims 1 to 4, wherein: the telescopic rod (6) is a linear electric telescopic rod, the telescopic rod (6) comprises a rotary motor (61), a lower shell (62), an upper shell (63), a screw flange bearing (64), a screw rod (65), a guide sliding rail (66), a guide sliding block (67), a driving bevel gear (68) and a driven bevel gear (69), the upper shell (63) is arranged inside the lower shell (62), the lower shell (62) is of a shell structure with an opening at the top, the upper shell (63) is of a shell structure with an opening at the bottom, the lower shell (62) is internally provided with the rotary motor (61), the output end of the rotary motor (61) is matched and installed with the driving bevel gear (68), the driving bevel gear (68) is meshed and installed with the driven bevel gear (69), the driven bevel gear (69) is installed on the screw rod (65), the bottom of the screw rod (65) is installed inside the lower shell (62) through a bearing (610), the bottom of the upper shell (63) is matched with a screw rod (65) through a screw rod flange bearing (64), a guide sliding rail (66) is arranged on the inner side wall of the lower shell (62), and the side wall of the screw rod flange bearing (64) is matched with the guide sliding rail (66) in a sliding mode through a guide sliding block (67).
6. The apparatus of claim 5, wherein the apparatus is further configured to control the growth of a plurality of aluminum nitride crystals simultaneously and precisely: the lower heater (2) and the top heater (4) are both electric heating plates, and the annular side wall heater (3) is an annular electric heating plate.
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| Application Number | Priority Date | Filing Date | Title |
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| CN202120486832.4U CN214361831U (en) | 2021-03-08 | 2021-03-08 | Device for simultaneously and accurately controlling growth of multiple aluminum nitride crystals |
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| CN202120486832.4U CN214361831U (en) | 2021-03-08 | 2021-03-08 | Device for simultaneously and accurately controlling growth of multiple aluminum nitride crystals |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114873570A (en) * | 2022-07-11 | 2022-08-09 | 山西中科潞安半导体技术研究院有限公司 | Method and device for purifying aluminum nitride powder by adopting PVT (polyvinyl dichloride) method |
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2021
- 2021-03-08 CN CN202120486832.4U patent/CN214361831U/en active Active
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114873570A (en) * | 2022-07-11 | 2022-08-09 | 山西中科潞安半导体技术研究院有限公司 | Method and device for purifying aluminum nitride powder by adopting PVT (polyvinyl dichloride) method |
| CN114873570B (en) * | 2022-07-11 | 2022-09-27 | 山西中科潞安半导体技术研究院有限公司 | Method and device for purifying aluminum nitride powder by adopting PVT (polyvinyl dichloride) method |
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