CN214218855U - Semiconductor processing equipment and process chamber thereof - Google Patents

Abstract

The application discloses semiconductor processing equipment and process chamber thereof belongs to semiconductor processing technology field. The disclosed process chamber of a semiconductor processing apparatus includes a first gas inlet mechanism (200), a second gas inlet mechanism (300), and a mixing device, wherein: the first gas inlet mechanism (200) and the second gas inlet mechanism (300) are communicated with a mixing device, the mixing device is positioned in the process chamber (100), the first gas input by the first gas inlet mechanism (200) and the second gas input by the second gas inlet mechanism (300) can be mixed in the mixing device, and the mixing device is provided with a gas outlet structure. By adopting the technical scheme, the problem that the thickness of a thin film on a silicon wafer cannot be uniform in the processing process of the semiconductor processing equipment in the background technology can be solved.

Description

Semiconductor processing equipment and process chamber thereof

Technical Field

The application belongs to the technical field of semiconductor processing, and particularly relates to semiconductor processing equipment and a process chamber thereof.

Background

Solar energy is used as a renewable energy source, creates great value for the survival development of human beings, and also leads the development of the industry using the solar energy as the energy source, wherein the development of the crystalline silicon solar cell is one of the solar energy and the solar energy.

During the last few years, the production of crystalline silicon solar cells has rapidly increased at an average annual rate of 30%, and the global demand for solar cells has increased, but the quality of crystalline silicon solar cells has decreased while the production has increased.

The manufacturing process of the crystalline silicon solar cell is complex, relevant parameters of each process directly or indirectly influence the performance of the crystalline silicon solar cell, and coating is an important process. For the coating process, whether the thickness of the thin film on the silicon wafer is uniform or not influences the performance of the battery. When semiconductor processing equipment at the present stage is used for preparing an antireflection film or a passivation film required by a crystalline silicon battery, the thickness of a thin film on a silicon wafer cannot be uniform.

SUMMERY OF THE UTILITY MODEL

An object of the embodiments of the present application is to provide a semiconductor processing apparatus and a process chamber thereof, which can solve the problem that the thickness of a thin film on a silicon wafer cannot be uniform in the processing process of the semiconductor processing apparatus in the background art.

In order to solve the technical problem, the present application is implemented as follows:

in a first aspect, an embodiment of the present application provides a process chamber of a semiconductor processing apparatus, including a first gas inlet mechanism, a second gas inlet mechanism, and a mixing device, wherein:

the first air inlet mechanism and the second air inlet mechanism are communicated with the mixing device, the mixing device is positioned in the process chamber, the first air input by the first air inlet mechanism and the second air input by the second air inlet mechanism can be mixed in the mixing device, and the mixing device is provided with an air outlet structure.

In a second aspect, embodiments of the present application provide a semiconductor processing apparatus that includes any of the process chambers described above.

By adopting the technical scheme, the following beneficial effects can be achieved:

the utility model provides a semiconductor processing equipment's process chamber, through improving correlation technique, mix the first gas of first air inlet mechanism input and the second gas of second air inlet mechanism input in mixing arrangement, mix through mixing arrangement and can make first gas and second gas mixing homogeneity better, thereby can make the process gas's in the process chamber degree of consistency better, thereby realize even deposition's purpose, finally can make the coating film comparatively even on the silicon chip.

Description of the drawings:

fig. 1 is a schematic diagram of an overall structure of a semiconductor processing apparatus according to an embodiment of the present disclosure;

FIG. 2 is an enlarged, fragmentary schematic view of a semiconductor processing apparatus disclosed in an embodiment of the present application;

FIG. 3 is a side view of a semiconductor processing apparatus as disclosed in an embodiment of the present application;

fig. 4 is a schematic perspective view of a first mixing mechanism of a semiconductor processing apparatus according to an embodiment of the disclosure;

fig. 5 is a schematic gas inlet process diagram of a semiconductor processing apparatus according to an embodiment of the present disclosure.

100-process chamber, 120-first chamber wall, 130-second chamber wall, 140-end cap, 150-chamber;

200-a first air inlet mechanism, 210-a first air inlet pipe, 220-a second air inlet pipe;

300-a second air inlet mechanism, 310-a third air inlet pipe and 320-a fourth air inlet pipe;

400-a first mixing mechanism, 410-a first air outlet, 420-an air outlet mechanism, 421-a first pipe section, 422-a second pipe section and 430-a connecting pipeline;

500-second mixing means, 510-second air outlet.

Detailed Description

The technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the drawings in the embodiments of the present application, and it is obvious that the described embodiments are some, but not all, embodiments of the present application. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present application.

The terms first, second and the like in the description and in the claims of the present application are used for distinguishing between similar elements and not necessarily for describing a particular sequential or chronological order. It will be appreciated that the data so used may be interchanged under appropriate circumstances such that embodiments of the application may be practiced in sequences other than those illustrated or described herein, and that the terms "first," "second," and the like are generally used herein in a generic sense and do not limit the number of terms, e.g., the first term can be one or more than one. In addition, "and/or" in the specification and claims means at least one of connected objects, a character "/" generally means that a preceding and succeeding related objects are in an "or" relationship.

The process chamber of the semiconductor processing equipment provided by the embodiment of the present application is described in detail by specific embodiments and application scenarios thereof with reference to the accompanying drawings.

As shown in fig. 1 to 5, an embodiment of the present application discloses a process chamber of a semiconductor processing apparatus, and the disclosed process chamber includes a first gas inlet mechanism 200, a second gas inlet mechanism 300, and a mixing device.

The process chamber is a structure that can be completely closed, and can be used as a mounting base for other components in the process chamber and also as a reaction space for process gases. The first gas inlet mechanism 200 and the second gas inlet mechanism 300 are media for introducing gas in the outside into the process chamber 100, and the mixing device can mix the gas introduced by the first gas inlet mechanism 200 and the second gas inlet mechanism 300, so that subsequent reaction in the process chamber 100 can be facilitated.

The first air inlet mechanism 200 and the second air inlet mechanism 300 are both communicated with the mixing device, so that the gas in the first air inlet mechanism 200 and the gas in the second air inlet mechanism 300 can be directly introduced into the mixing device. The mixing device is located in the process chamber 100, the first gas input by the first gas input mechanism 200 and the second gas input by the second gas input mechanism 300 can be mixed in the mixing device, so that the process gases mixed in the mixing device can be more uniform, the mixing device has a gas outlet structure, so that the process gases mixed by the mixing device can come out of the mixing device, and the process gases mixed uniformly can perform subsequent related reactions.

The process chamber of the semiconductor processing equipment disclosed by the embodiment of the application is improved by the related technology, the first gas input by the first gas inlet mechanism 200 and the second gas input by the second gas inlet mechanism 300 are mixed in the mixing device, the mixing uniformity of the first gas and the second gas can be better by mixing the mixing devices, so that the uniformity of the process gas in the process chamber 100 can be better, the purpose of uniform deposition is realized, and finally, the coating film on a silicon wafer can be more uniform.

In the process chamber disclosed in the embodiment of the present application, the first gas inlet mechanism 200 and the second gas inlet mechanism 300 may be disposed in the process chamber 100, the first gas inlet mechanism 200 may include a first gas inlet pipe 210 and a second gas inlet pipe 220, the second gas inlet mechanism 300 may include a third gas inlet pipe 310 and a fourth gas inlet pipe 320, and the mixing device may include a first mixing mechanism 400 and a second mixing mechanism 500. The first air inlet pipe 210 and the third air inlet pipe 310 both extend into the process chamber 100 and are both communicated with the first mixing mechanism 400, the first mixing mechanism 400 is provided with a first air outlet 410, the second air inlet pipe 220 and the fourth air inlet pipe 320 both extend into the process chamber 100 and are both communicated with the second mixing mechanism 500, and the second mixing mechanism 500 is provided with a second air outlet 510.

In the above case, the first gas inlet mechanism 200 and the second gas inlet mechanism 300 may each include two gas inlet pipes, and the mixing device also includes two mixing mechanisms, so that two sets of devices for gas inlet and gas mixing may exist in the process chamber 100 at the same time, and thus the mixing efficiency of the gas mixture in the process chamber 100 may be improved. Specifically, the gas in the external gas source can deliver the process gas to the first mixing mechanism 400 through the first gas inlet pipe 210 and the third gas inlet pipe 310, and the mixed process gas can be discharged into the process chamber 100 through the first gas outlet 410 for subsequent reactions. Similarly, the gas in the external gas source can also deliver the process gas to the second mixing mechanism 500 through the second gas inlet pipe 220 and the fourth gas inlet pipe 320, and the mixed gas can be discharged into the process chamber 100 through the second gas outlet 510 for subsequent reaction.

It should be noted that the number of the air inlet pipes of the first air intake mechanism 200 and the second air intake mechanism 300 may be 3, 4, etc., so that more types of gases can be mixed in the same mixing device, and the process requirement of mixing more types of gases can be met, and the number of the air inlet pipes of the first air intake mechanism 200 and the second air intake mechanism 300 is not specifically limited in the embodiment of the present application.

In a further embodiment, the first gas outlet 410 may be located at a first predetermined position in the process chamber 100, and the second gas outlet 510 may be located at a second predetermined position in the process chamber 100, and the first predetermined position and the second predetermined position are sequentially arranged along the length direction of the process chamber 100. In this case, the first gas outlet 410 and the second gas outlet 510 are disposed at different positions in the length direction of the process chamber 100, so that the process gases mixed uniformly can be discharged from different positions in the length direction of the process chamber 100, and the process gases mixed uniformly can be uniformly distributed in the process chamber 100, so that the thickness of the thin film on the silicon wafer can be uniform in the subsequent coating process on the silicon wafer.

In a more specific embodiment, the process chamber 100 may include a first chamber wall 120 and a second chamber wall 130 sequentially disposed along a length direction thereof, a distance between the first chamber wall 120 and the second chamber wall 130 is a length of the process chamber 100, the first air intake mechanism 200 and the second air intake mechanism 300 extend into the process chamber 100 through the first chamber wall 120, a distance between a first preset position and the first chamber wall 120 is a first distance, where M is equal to or less than L/4, where M is the first distance, and L is the length of the process chamber 100.

In the above case, the first gas outlet 410 of the first mixing mechanism 400 is disposed in the process chamber 100 at a position less than one fourth of the entire process chamber 100 from the first chamber wall 120, that is, the first gas outlet 410 is disposed at a position close to the first chamber wall 120, so that the uniformly mixed process gas discharged from the first gas outlet 410 can preferentially fill the portion of the process chamber 100 close to the first chamber wall 120, and the reaction of the film on the silicon wafer close to the first gas outlet 410 can be more uniform, thereby improving the quality of the silicon wafer film.

In a further optimized solution, the distance between the second preset position and the first chamber wall 120 is a second distance, wherein L/4 is greater than or equal to N is less than or equal to 3L/4, wherein N is the second distance, such that the second gas outlet 510 of the second mixing mechanism 500 is disposed in the process chamber 100 at a position which is less than one-half of the whole process chamber 100 away from the first chamber wall 120, that is, the second gas outlet 510 is also disposed at a position close to the first chamber wall 120 but far away from the first gas outlet 410, such that the process chamber 100 close to the second chamber wall 130 can be filled with the uniformly mixed process gas discharged from the second gas outlet 510, such that the whole process chamber 100 can be uniformly filled with the process gas discharged from the first gas outlet 410 and the second gas outlet 510, thereby placing a plurality of silicon wafers in the whole process chamber 100, or when the number of the reaction silicon wafers is increased, the obtained silicon wafer film has higher quality. Alternatively, N — L/2, thereby enabling the second predetermined position to be located at the middle of the process chamber 100.

Meanwhile, the arrangement of the first gas outlet 410 and the second gas outlet 510 at different positions in the length direction of the process chamber 100 can enable the first gas outlet 410 and the second gas outlet 510 to have a mutual compensation effect, specifically, when the first gas outlet 410 or the second gas outlet 510 fails, the other gas outlet which normally works can continuously discharge the uniformly mixed process gas to maintain the normal working procedures in the process chamber 100, so that the coating process in the process chamber 100 is not greatly influenced, and the loss can be reduced to a certain extent.

In the process chamber disclosed in the embodiment of the present application, each of the first mixing mechanism 400 and the second mixing mechanism 500 may include an engaging pipe 430 and an air outlet mechanism 420, the engaging pipe 430 may engage the air outlet mechanism 420 with an air inlet pipe, specifically, a first end of the engaging pipe 430 is communicated with the first air inlet pipe 210 and the third air inlet pipe 310 or the second air inlet pipe 220 and the fourth air inlet pipe 320, a second end of the engaging pipe 430 is communicated with the air outlet mechanism 420, the air outlet mechanism 420 is provided with a first air outlet 410 or a second air outlet 510, and a lumen of the engaging pipe 430 is a variable diameter lumen.

Under the above conditions, the gas in the gas source can enter the connecting pipeline 430 with a variable diameter pipe cavity through the first gas inlet pipe 210 and the third gas inlet pipe 310 or the second gas inlet pipe 220 and the fourth gas inlet pipe 320, the connecting pipeline 430 with the variable diameter pipe cavity enables the gas inside to collide, further mixing of the process gas in the first mixing mechanism 400 and the second mixing mechanism 500 is facilitated, the uniformly mixed process gas can enter the gas outlet mechanism 420 from the connecting pipeline 430, and finally the uniformly mixed process gas can be discharged into the process chamber 100 for subsequent silicon wafer reaction.

In a further technical scheme, the gas outlet mechanism 420 may be provided with a plurality of first gas outlets 410 or a plurality of second gas outlets 510, the plurality of first gas outlets 410 or the plurality of second gas outlets 510 are distributed at intervals, the plurality of first gas outlets 410 and the plurality of second gas outlets 510 are provided to split the mixed gas of the first mixing mechanism 400 and the second mixing mechanism 500, so that the mixed gas in the first mixing mechanism 400 and the second mixing mechanism 500 can be more uniformly filled into the whole process chamber 100, and the directions of the first gas outlets 410 and the second gas outlets 510 can be set according to specific use requirements, in this embodiment, specific directions of the first gas outlets 410 and the second gas outlets 510 are not limited.

In a more preferable embodiment, the air outlet mechanism 420 may include a first pipe segment 421 and a second pipe segment 422 perpendicular to and communicating with one end of the first pipe segment 421, and the plurality of first air outlets 410 or the plurality of second air outlets 510 are disposed on the second pipe segment 422. In this case, the second pipe segment 422 perpendicular to one end of the first pipe segment 421 is parallel to the width direction of the process chamber 100, so that the process gases mixed in the first mixing mechanism 400 and the second mixing mechanism 500 can be radiated to the width direction of the process chamber 100 in a wider range in a shorter time, and thus the process gases mixed uniformly can be filled in the process chamber 100 more quickly, and finally, the improvement of the coating quality of the silicon wafer can be facilitated.

In the process chamber disclosed in the embodiment of the present application, the process chamber 100 may include a chamber body 150 and an end cap 140, the end cap 140 may be detachably coupled to one end of the chamber body 150, the end cap 140 and the chamber body 150 enclose the process chamber 100, and the first and second gas inlet mechanisms 200 and 300 may be mounted on the end cap 140. Under the condition, the end cover 140 can be opened when the silicon wafer reactant is damaged or picked up, the work of workers can be facilitated, the end cover 140 can be connected to one end of the cavity 150 in a detachable connection mode such as plugging and buckling installation, the detachable connection between the end cover 140 and the cavity 150 can be in other modes, and the detachable connection mode between the end cover 140 and the cavity 150 is not specifically limited in the embodiment of the application.

Embodiments of the present application disclose a semiconductor processing apparatus that includes a process chamber of any of the above.

It should be noted that, in this document, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or apparatus. Without further limitation, an element defined by the phrase "comprising an … …" does not exclude the presence of other like elements in a process, method, article, or apparatus that comprises the element.

While the present embodiments have been described with reference to the accompanying drawings, it is to be understood that the invention is not limited to the precise embodiments described above, which are meant to be illustrative and not restrictive, and that various changes may be made therein by those skilled in the art without departing from the spirit and scope of the invention as defined by the appended claims.

Claims (10)

1. A process chamber of a semiconductor processing apparatus, comprising a first gas inlet mechanism (200), a second gas inlet mechanism (300), and a mixing device, wherein:

the first gas inlet mechanism (200) and the second gas inlet mechanism (300) are both communicated with the mixing device, the mixing device is positioned in the process chamber (100), the first gas input by the first gas inlet mechanism (200) and the second gas input by the second gas inlet mechanism (300) can be mixed in the mixing device, and the mixing device is provided with a gas outlet structure.

2. The process chamber of claim 1, wherein the first gas inlet mechanism (200) and the second gas inlet mechanism (300) are both disposed on the process chamber (100), the first gas inlet mechanism (200) comprises a first gas inlet pipe (210) and a second gas inlet pipe (220), the second gas inlet mechanism (300) comprises a third gas inlet pipe (310) and a fourth gas inlet pipe (320), and the mixing device comprises a first mixing mechanism (400) and a second mixing mechanism (500);

the first air inlet pipe (210) and the third air inlet pipe (310) both extend into the process chamber (100) and are communicated with the first mixing mechanism (400), and the first mixing mechanism (400) is provided with a first air outlet (410);

the second air inlet pipe (220) and the fourth air inlet pipe (320) both extend into the process chamber (100) and are communicated with the second mixing mechanism (500), and the second mixing mechanism (500) is provided with a second air outlet (510).

3. The process chamber of claim 2, wherein the first gas outlet (410) is located at a first predetermined position in the process chamber (100); the second gas outlet (510) is located at a second preset position in the process chamber (100), and the first preset position and the second preset position are sequentially arranged along the length direction of the process chamber (100).

4. The process chamber of claim 3, wherein the process chamber (100) comprises a first chamber wall (120) and a second chamber wall (130) sequentially arranged along a length direction of the process chamber (100), a distance between the first chamber wall (120) and the second chamber wall (130) is a length of the process chamber (100), the first gas inlet mechanism (200) and the second gas inlet mechanism (300) penetrate through the first chamber wall (120) to extend into the process chamber (100), a distance between the first preset position and the first chamber wall (120) is a first distance, wherein M is less than or equal to L/4, wherein M is the first distance, and L is the length of the process chamber (100).

5. The process chamber of claim 4, wherein a distance between the second predetermined location and the first chamber wall (120) is a second distance, wherein N is L/2, and wherein N is the second distance.

6. The process chamber of claim 2, wherein the first mixing mechanism (400) and the second mixing mechanism (500) each comprise an engagement pipe (430) and an air outlet mechanism (420), a first end of the engagement pipe (430) is communicated with the first air inlet pipe (210) and the third air inlet pipe (310) or the second air inlet pipe (220) is communicated with the fourth air inlet pipe (320), a second end of the engagement pipe (430) is communicated with the air outlet mechanism (420), the air outlet mechanism (420) is provided with the first air outlet (410) or the second air outlet (510), and a lumen of the engagement pipe (430) is a variable-diameter lumen.

7. The process chamber of claim 6, wherein the gas outlet mechanism (420) defines a plurality of the first gas outlets (410) or a plurality of the second gas outlets (510), and the plurality of the first gas outlets (410) or the plurality of the second gas outlets (510) are spaced apart from each other.

8. The process chamber of claim 7, wherein the gas outlet mechanism (420) comprises a first pipe section (421) and a second pipe section (422) perpendicular to and communicating with one end of the first pipe section (421), and a plurality of the first gas outlets (410) or a plurality of the second gas outlets (510) are disposed on the second pipe section (422).

9. The process chamber of claim 2, wherein the process chamber (100) comprises a chamber body (150) and an end cap (140), the end cap (140) is detachably connected to one end of the chamber body (150), the end cap (140) and the chamber body (150) enclose the process chamber (100), and the first gas inlet mechanism (200) and the second gas inlet mechanism (300) are mounted on the end cap (140).

10. A semiconductor processing apparatus comprising a process chamber according to any of claims 1 to 9.

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