CN214044335U

CN214044335U - High-power semiconductor laser

Info

Publication number: CN214044335U
Application number: CN202120209724.2U
Authority: CN
Inventors: 周少丰; 欧阳春宝; 崔泽林
Original assignee: Shenzhen Xinghan Laser Technology Co Ltd
Current assignee: Shenzhen Xinghan Laser Technology Co Ltd
Priority date: 2021-01-26
Filing date: 2021-01-26
Publication date: 2021-08-24
Anticipated expiration: 2031-01-26

Abstract

The utility model provides a high power semiconductor laser, including casing, dodging component and a plurality of luminescence unit, luminescence unit and dodging component are all packaged in the casing, dodging component is located luminescence unit's light-emitting direction, the unthreaded hole is seted up to the side of casing, the unthreaded hole is located dodging component's light-emitting direction, the laser beam that luminescence unit sent is through dodging component dodging, and the laser beam after the dodging is exported after the unthreaded hole plastic. The utility model provides a semiconductor laser carries out dodging through the laser beam that sets up dodging component and send the luminescence unit, has improved the distribution homogeneity of facula energy, carries out the plastic to the laser beam through seting up the light-emitting hole on the casing, can export the high and big laser beam of diameter of energy of specific shape as required.

Description

High-power semiconductor laser

Technical Field

The utility model relates to a laser instrument technical field especially relates to a high power semiconductor laser.

Background

The laser is a device which can be used for emitting laser, laser is generated by a laser chip arranged in the laser, the laser emitted by the laser chip is generally collimated in the fast and slow axis direction by a collimating mirror, after the collimated parallel laser beam is reflected by a reflecting mirror, the laser beam with high power and high energy density is obtained after the laser beam is combined, in the prior technical scheme, the laser beam is output by optical fiber coupling, and the laser beam is coupled into the optical fiber by adopting a focusing lens to compress the laser beam to a specific size. Although the laser is guided into the optical fiber, which is convenient for the loading, unloading and moving of the whole laser, the optical fiber coupling process needs the front end focused beam to have higher matching with the diameter, NA and the like of the optical fiber, so as to have higher coupling efficiency, and actually increase the loss of laser energy. In addition, under the condition of high power, the optical fiber is easy to burn due to the fact that some flaws exist in the optical fiber, so that the manufacturing difficulty of the laser is increased, and the manufacturing cost is increased. In some application occasions requiring large-diameter laser beams, such as welding and other use environments, high-energy large-size laser beams are required to be continuously output to melt the surface of an object, and at the moment, the manufacturing difficulty and the rework rate of the laser are effectively reduced by adopting a method of directly outputting collimated laser without optical fiber coupling, and the production efficiency of the direct laser is improved.

Disclosure of Invention

In view of the above, the present invention provides a high power semiconductor laser capable of outputting a high energy laser beam.

The utility model provides a high power semiconductor laser, including casing, dodging component and a plurality of luminescence unit, luminescence unit and dodging component are all packaged in the casing, dodging component is located luminescence unit's light-emitting direction, the unthreaded hole is seted up to the side of casing, the unthreaded hole is located dodging component's light-emitting direction, the laser beam that luminescence unit sent is through dodging component dodging, and the laser beam after the dodging is exported after the unthreaded hole plastic.

Further, the center of the light outlet hole is coincident with the center of the laser beam emitted by the light uniformizing element.

Further, the cross-sectional area of the light outlet hole is smaller than that of the laser beam emitted by the light uniformizing element.

Further, the shape of the light outlet hole is circular, square or polygonal.

Further, the light uniformizing element is arranged between the light outlet hole and the light emitting unit.

Furthermore, the light homogenizing element is attached to the inner side surface of the light outlet hole.

Furthermore, the light homogenizing element is embedded in the light outlet hole.

Further, the dodging element is a micro-lens array or a diffraction element.

Furthermore, each light-emitting unit comprises a laser chip, a fast axis collimating mirror, a slow axis collimating mirror and a reflecting mirror, and laser emitted by the laser chip is converted into parallel laser beams after sequentially passing through the fast axis collimating mirror, the slow axis collimating mirror and the reflecting mirror.

The utility model provides a beneficial effect that technical scheme brought is: the utility model provides a semiconductor laser carries out dodging through the laser beam that sets up dodging component and send the luminescence unit, improves the distribution homogeneity of facula energy, carries out the plastic to the laser beam through seting up the light-emitting hole on the casing, exports the energy of specific shape and the laser beam that the diameter is big as required.

Drawings

Fig. 1 is a schematic diagram of a three-dimensional structure of a high power semiconductor laser according to the present invention.

Fig. 2 is another schematic perspective view of the high power semiconductor laser of the present invention.

Fig. 3 is a top view of the high power semiconductor laser of the present invention.

Fig. 4 is a side view of a high power semiconductor laser of the present invention.

Detailed Description

In order to make the objects, technical solutions and advantages of the present invention clearer, embodiments of the present invention will be further described below with reference to the accompanying drawings.

Example 1:

referring to fig. 1 and fig. 2, an embodiment 1 of the present invention provides a high power semiconductor laser, which includes a housing 1, a plurality of light emitting units 2 arranged in a step shape, and a light uniformizing element 3, wherein the light emitting units 2 and the light uniformizing element 3 are all enclosed in the housing 1.

The side end of the shell 1 is provided with a light outlet hole 11, the light outlet hole 11 is positioned in the light outlet direction of the light uniformizing element 3, the center of the light outlet hole 11 is overlapped with the center of a laser beam emitted by the light uniformizing element 3, the sectional area of the light outlet hole 11 is smaller than that of the laser beam so as to shape the laser beam, meanwhile, lasers with low peripheral energy of the laser beam can be filtered out, the shape of the light outlet hole 11 can be set according to the shape of a light spot needing to be output, for example, when a circular light spot needs to be output, the light outlet hole 11 can be set to be circular; when a square light spot needs to be output, the light outlet 11 is set to be square; or when a polygonal light spot needs to be output, the light outlet 11 is set to be polygonal.

The light exit hole 11 extends outward along the outer side of the case 1 to form a protrusion 111, and the protrusion 111 facilitates alignment when welding using laser.

Referring to fig. 3, each light emitting unit 2 includes a laser chip 21, a fast axis collimator 22, a slow axis collimator 23, and a reflector 24, and laser light emitted from the laser chip 21 is converted into parallel laser beams after passing through the fast axis collimator 22, the slow axis collimator 23, and the reflector 24 in sequence.

The light uniformizing element 3 is arranged in the light outgoing direction of the reflector 24, and the light uniformizing element 3 is used for homogenizing light spots of the laser beam and improving the distribution uniformity of light spot energy; in this embodiment, the light uniformizing element 3 is disposed between the light exit hole 11 and the light emitting unit 2, a certain distance is kept between the light uniformizing element 3 and the light exit hole 11, and the laser beam emitted from the light emitting unit 2 is uniformized by the light uniformizing element 3; the light unifying element 3 may be a microlens array or a diffractive element.

Referring to fig. 4, in the present embodiment, a stepped heat sink 4 is disposed on the bottom surface inside the housing 1, the stepped heat sink 4 includes at least one stepped surface 41, each stepped surface 41 is used for placing the laser chip 21 of a light emitting unit 2, the fast axis collimating mirror 22, the slow axis collimating mirror 23 and the reflecting mirror 24, and the heights of the stepped surfaces 41 of the stepped heat sink 4 are sequentially arranged in an arithmetic progression, and the lower the height of the stepped surface 41 of the light emitting unit 2 located closer to the light exit hole 11 is, the higher the height of the stepped surface 41 of the light emitting unit 2 located farther from the light exit hole 11 is, so that light spots output by the light path of each light emitting unit 2 are not overlapped with each other and can be input to the dodging element 3.

The working principle of the high-power semiconductor laser provided by the embodiment is as follows: laser emitted by the laser chip 21 sequentially passes through the fast axis collimating mirror 22 and the slow axis collimating mirror 23 and then is collimated in the directions of the fast axis and the slow axis, collimated parallel laser beams are reflected by the reflecting mirror 24, the reflected parallel laser beams are homogenized by the light homogenizing element 3, and the homogenized laser beams are shaped by the light outlet hole 11 in the shell 1 and then are output.

Example 2:

example 2 differs from example 1 only in that: the light homogenizing element 3 is attached to the inner side surface of the light outlet hole 11; the rest of the structure is basically the same as that of embodiment 1.

Example 3:

example 3 differs from example 1 only in that: the dodging element 3 is embedded in the light outlet hole 11; the rest of the structure is basically the same as that of embodiment 1.

In this document, the terms front, back, upper and lower are used to define the components in the drawings and the positions of the components relative to each other, and are used for clarity and convenience of the technical solution. It is to be understood that the use of the directional terms should not be taken to limit the scope of the claims.

The features of the embodiments and embodiments described herein above may be combined with each other without conflict.

The above description is only for the preferred embodiment of the present invention, and is not intended to limit the present invention, and any modifications, equivalent replacements, improvements, etc. made within the spirit and principle of the present invention should be included within the protection scope of the present invention.

Claims

1. The utility model provides a high power semiconductor laser, its characterized in that includes casing, even light component and a plurality of luminescence unit, luminescence unit and even light component uniform package are in the casing, even light component is located luminescence unit's light-emitting direction, the unthreaded hole is seted up to the side of casing, the unthreaded hole is located even light component's light-emitting direction, the laser beam that luminescence unit sent is through even light component even light, and the laser beam behind the even light is exported after the unthreaded hole plastic.

2. The high power semiconductor laser according to claim 1, wherein the center of the light exit aperture coincides with the center of the laser beam emitted by the light unifying element.

3. The high power semiconductor laser as claimed in claim 1 wherein the cross-sectional area of the exit aperture is smaller than the cross-sectional area of the laser beam exiting the dodging element.

4. The high power semiconductor laser according to claim 1, wherein the light exit aperture is any one of circular, square or polygonal in shape.

5. The high power semiconductor laser according to claim 1, wherein the light unifying element is disposed between the light exit aperture and the light emitting unit.

6. The high power semiconductor laser as claimed in claim 5, wherein the light homogenizing element is attached to the inner surface of the light exit hole.

7. The high power semiconductor laser as claimed in claim 1 wherein the light homogenizing element is embedded inside the light exit aperture.

8. The high power semiconductor laser as claimed in claim 1, wherein each light emitting unit comprises a laser chip, a fast axis collimator, a slow axis collimator and a reflector, and the laser emitted from the laser chip is converted into parallel laser beams after passing through the fast axis collimator, the slow axis collimator and the reflector in sequence.