CN210468379U

CN210468379U - Semiconductor laser, semiconductor laser module, and laser device

Info

Publication number: CN210468379U
Application number: CN201921835531.7U
Authority: CN
Inventors: 勾志勇; 肖岩; 周德来
Original assignee: Shenzhen Lemon Photon Technology Co ltd
Current assignee: Shenzhen Lemon Photon Technology Co ltd
Priority date: 2019-10-29
Filing date: 2019-10-29
Publication date: 2020-05-05
Anticipated expiration: 2029-10-29

Abstract

The utility model relates to a semiconductor laser, semiconductor laser module and laser equipment, wherein, the semiconductor laser is a horizontal cavity surface emitting laser HCSEL; the HCSEL emits one-direction collimated light beam and one-direction non-collimated light beam, or the light emitted by the HCSEL is collimated light beams in two directions; the HCSEL comprises a grating, laser mode locking is realized through the grating, laser is coupled and output, and light is coupled and vertically output. The semiconductor laser is used as a laser chip to form a semiconductor laser module which can directly output uniform line beams without being coupled to optical fibers, and the semiconductor laser has the advantages of simple process, low cost, high production efficiency, good effect and very high cost performance.

Description

Semiconductor laser, semiconductor laser module, and laser device

Technical Field

The utility model belongs to the technical field of the laser technology and specifically relates to a semiconductor laser, semiconductor laser module and laser equipment.

Background

Generally, the spatial intensity distribution of a laser beam emitted by coupling an optical fiber laser and a semiconductor laser to an optical fiber is gaussian distribution, namely a gaussian beam, and the laser intensity is expected to be a linear spot uniformly distributed in the application of many laser technologies, such as the application fields of laser cleaning, laser inspection, laser ablation, laser 3D scanning, laser cladding, laser heating, laser ablation, intelligent detection, cosmetic skin treatment, characterization processing, color ablation/paint removal, coating removal and the like.

On the other hand, the current traditional process is too complex in working procedure, high in cost and low in cost performance.

One of the conventional methods is to use chip linear array or laser bar, the fast axis direction must be aligned or focused to narrow square by aspheric surface or binary or its diffraction optics (green lines), and the slow axis direction is extended to long strip direction by aspheric surface or binary or diffraction optics. Binary optics is adopted, aspheric surface or diffraction optics is high in cost, and due to the fact that Gaussian distribution of a semiconductor chip is serious, secondary homogenization design cannot be carried out in a mode of light field superposition in some cases, the desired effect cannot be achieved in many cases, and the method is rarely used at present.

In another conventional method, for example, a semiconductor laser of several hundred watts is coupled to an optical fiber, multiple LD chips are used for collimation in the fast and slow directions, then multiple reflectors are used for superposition of light fields, and then a condenser is coupled to the output of the optical fiber, the output light fields are still gaussian distributed, in application, secondary optics (aspheric or binary optics and diffraction optics) are used for gaussian homogenization to make required uniform lines, and the method has the advantages of complex process, low efficiency and high cost.

In another conventional method, a few hundred watts of fiber laser is adopted, but output beams of the fiber laser are also in gaussian or multimode distribution, which cannot be directly applied to some fields with high requirements on the beams, so that the beams need to be homogenized. Such a method is as expensive as the conventional methods described above and the coupling of semiconductor lasers to optical fibers.

SUMMERY OF THE UTILITY MODEL

The utility model discloses the technical problem that will solve is: the semiconductor laser, the semiconductor laser module and the laser device are provided, and the problems of too complex process procedures, high cost and low cost performance of the semiconductor laser in the prior art are solved.

In order to solve the technical problem, the utility model adopts the following technical scheme:

a semiconductor laser is a horizontal cavity surface emitting laser HCSEL; the HCSEL emits light with one-direction collimated light beam and one-direction non-collimated light beam, or the two directions of the light emitted by the HCSEL are collimated light beams; the HCSEL comprises a grating, laser mode locking is realized through the grating, laser is coupled and output, and light is coupled and vertically output.

Further, the grating is a high-order grating, and the high-order grating is a linear grating, a nonlinear grating or a non-uniform grating; the HCSEL is in a horizontal oscillation mode and outputs a homogenized line beam; the high-order grating is positioned on the surface of or inside a horizontal cavity of the HCSEL; the light emitting direction of the HCSEL is perpendicular to the upper surface or the lower surface of the HCSEL horizontal cavity, and the light emitting direction of the HCSEL is strip-shaped or square.

Further, the HCSEL comprises a P electrode, an N electrode, a substrate, an excitation area and a grating which are laminated to form a horizontal cavity of the horizontal cavity surface emitting laser, wherein the front surface or the back surface of the horizontal cavity forms a light emitting area; according to the position of the grating in the horizontal cavity, the HCSEL emits light directly from the surface of the horizontal cavity or from the inside correspondingly.

As some examples, N electrode, substrate, excitation area, P electrode are from the top to the bottom horizontally laminated, the grating is located in the arbitrary layer or the position of upper and lower surface; the shapes and sizes of the layers are mutually matched to form a flat laminated structure.

The utility model provides a semiconductor laser module, semiconductor laser module includes that a plurality of as above semiconductor laser arrange as laser chip and form.

Furthermore, the single or a plurality of HCSELs are linearly arranged in the direction of the length of the light-emitting region to form a laser chip array, and the laser chip array directly outputs homogenized light beams without adopting a coupling optical fiber;

the semiconductor laser module comprises an optical element for focusing and/or angle expanding beams, wherein the beams emitted from the HCSEL in the long slow axis direction are focused into required narrow-strip-direction light spots by adopting an asymmetric curvature optical element; and/or the presence of a gas in the gas,

the light emitted from the HCSEL in the narrow direction and the fast axis is expanded into light spots in the required long direction through another optical element; after the angle is focused or expanded by the optical element, the fast axis light and the slow axis light are superposed into a uniform linear light spot.

As some embodiments, the optical element is a lens; the geometric center of the single or the plurality of HCSELs after arrangement and the center of the optical axis of the lens are on the same central line; the length direction of the light emitting surface of the HCSEL or the length direction of the light emitting surface of the HCSEL array is the direction with slow angle divergence and the Y direction of the slow axis, and corresponds to the narrow direction of the focused line light spot; the narrow direction of the light emitting surface of the HCSEL corresponds to the direction of rapid angle divergence and also corresponds to the direction of the fast axis X, and corresponds to the long strip direction of the line spot after focusing.

As some embodiments, the optical element of the semiconductor laser module includes one or more lenses; the directions of the curvature radius R of the lens are mutually vertical: namely, one curvature radius Rx is X direction, curvature radius Y direction Ry is 0, one curvature radius Ry is Y direction, curvature radius X direction Rx is 0; the function of each radius of curvature R is: the curvature radius R is in the length direction of a focusing light spot line towards the length direction of the light emitting surface of the HCSEL, and the function of the curvature radius R in the short direction of the chip is in the length direction of the focusing light spot line; when the optical element is a piece, the curvature radiuses on the lenses are in a mutually perpendicular state; when the optical element comprises two pieces, the curvature radius directions of the lenses are relatively vertical;

in some embodiments, the lens is any one of a cylindrical lens, an aspherical cylindrical lens, a compound curved surface, a binary optical element, and a diffractive optical element, or a combination of any several of them.

As some embodiments, a plurality of HCSELs are arranged on a heat sink, a plurality of HCSELs are arranged into a chip array according to the slow axis direction or the light-emitting area length direction, and each HCSEL is independently arranged on the same heat sink by one heat sink or a plurality of HCSELs; the HCSEL is soldered to the heat sink and the HCSEL and HCSEL are electrically connected in series.

The utility model also provides a laser equipment, including laser output unit, laser output unit includes as above semiconductor laser module.

As some examples, the laser device is one of laser cladding, laser cleaning, laser inspection, laser ablation, laser 3D scanning, laser heating, laser ablation, smart detection, and the like.

The utility model has the advantages that:

the semiconductor laser of the utility model can be collimated in one direction, not collimated in one direction, or collimated in two directions, and the light distribution from the semiconductor laser is relatively uniform; adopt the utility model discloses a semiconductor laser arranges the semiconductor laser module that forms as the chip, need not to adopt coupling lens to optic fibre alright direct output even light, and can adopt ordinary optical element can output the homogenization light beam, and process is simple, low cost.

The present invention will be described in further detail with reference to the accompanying drawings.

Drawings

Fig. 1 is a schematic diagram of an internal structure of a semiconductor laser according to an embodiment of the present invention.

Fig. 2 is a schematic diagram of light output of a semiconductor laser according to an embodiment of the present invention.

Fig. 3 is a schematic diagram of different light emitting modes of a semiconductor laser according to an embodiment of the present invention; fig. 3(a) shows a back light emitting mode when the grating is on the surface, fig. 3(b) shows a surface light emitting mode when the grating is on the surface, fig. 3(c) shows a front light emitting mode when the grating is inside, and fig. 3(d) shows a back light emitting mode when the grating is inside.

Fig. 4 shows a directional collimated and a directional non-collimated near field beam distribution curve of a semiconductor laser, where fig. 4(a) is a near field beam energy distribution diagram in the fast axis direction; FIG. 4(b) is a diagram showing a near-field beam energy distribution in the slow axis direction.

Fig. 5 is an embodiment of the semiconductor laser module of the present invention.

Fig. 6 is an optical schematic diagram of a semiconductor laser module according to an embodiment of the present invention.

Fig. 7 is a schematic diagram of an output light spot of a semiconductor laser module according to an embodiment of the present invention.

Fig. 8 is a size distribution diagram of an output spot of a semiconductor laser module according to an embodiment of the present invention.

Detailed Description

It should be noted that, in the present invention, features of various embodiments and embodiments can be combined with each other without conflict, and the present invention is further described in detail with reference to the accompanying drawings and specific embodiments.

Referring to fig. 1-8, embodiments of the present invention relate to a semiconductor laser 10 (see fig. 1-3) and a semiconductor laser module 100 (see fig. 5-6). The semiconductor laser is a semiconductor laser HCSEL 10. The module 100 comprises a single or a plurality of horizontal cavity surface emitting lasers HCSEL as laser chips, and by arranging the HCSEL10 in a line along the length direction of the light emitting area, the module can output a homogenized light beam without coupling to an optical fiber and by adopting a common optical element.

Further, use the utility model discloses a semiconductor laser module is applied to laser equipment as laser output unit, and equipment system is simple, and the component is few, can adopt ordinary optical element for example ordinary optical lens can reach required homogenization line beam, and process is simple, low cost, and production efficiency is high, and is respond well, has very high price/performance ratio, and the whole scheme price/performance ratio is compared in optical fiber coupling and other semiconductor chip array arrangement with low costs.

The semiconductor laser of the present invention is a HCSEL (Horizontal Cavity emitting laser). Referring to fig. 1-2, as shown in the drawings, a schematic diagram of a structure of a semiconductor laser HCSEL10 as a non-limiting example, the HCSEL10 is in a horizontal oscillation mode and outputs a uniform line beam, and the laser chip structure and the light emitting mode of the HCSEL can reduce the chip cost, simplify the process procedure during coupling, and facilitate integration with other optical devices in a module.

Specifically, the semiconductor laser HCSEL10 of the present embodiment includes a P electrode 2, an N electrode 3, a substrate 4, an excitation region 5, a grating 1, and other structures, which are stacked in layers and horizontally, to form a horizontal cavity of the horizontal cavity surface emitting laser as a whole, a light emitting region 11 is formed on the front surface or the back surface of the horizontal cavity, a top layer (or an upper surface) and a bottom layer (or a lower surface) are respectively corresponding to the front surface or the back surface of the horizontal cavity of the HCSEL chip, and the light emitting region 11 is formed on the front surface or the back surface of the horizontal cavity surface, accordingly, light is emitted from the front surface and/or the back surface of the horizontal cavity surface, and the light emitting direction is. The grating 1 may be located on the surface or inside of the semiconductor laser HCSEL according to the embodiment of the present invention, and may also be located at other positions of the semiconductor laser HCSEL chip.

As a specific example of the laminated structure of the semiconductor laser HCSEL10, the P-electrode 2 and the N-electrode 3 are located at upper and lower layers and outside two layers of the substrate 4 and the excitation region 5; the substrate 4 and the excitation region 5 are respectively positioned on the upper layer and the lower layer and are positioned between the two layers of the P electrode 2 and the N electrode 3. More specifically, the N electrode 3, the substrate 4, the excitation region 5, and the P electrode 2 are horizontally stacked from top to bottom, and the grating 1 may be located at any layer or position of the upper and lower surfaces (front or back). In the non-limiting example shown in fig. 1-2, the grating 1 is located between the excitation region 5 and the P-electrode 2, and the light emitting region is located in front of a Horizontal Cavity Surface Emitting Laser (HCSEL). The shapes and sizes of the layers are mutually matched to form a flat laminated structure.

The grating 1 is preferably a high-order grating, laser mode locking is realized through the high-order grating, laser is coupled and output through the high-order grating, and vertical output light is coupled. The semiconductor laser HCSEL10 of the utility model emits light with a collimated light beam in one direction and emits light with a non-collimated light beam in one direction; or the light emerging is a collimated beam in both directions. Referring to fig. 4, an example of a light intensity distribution curve corresponding to light emission angles in fast and slow directions of the semiconductor laser HCSEL is shown, the semiconductor laser HCSEL being collimated in one direction (i.e., in the slow direction) and non-collimated in one direction (i.e., in the fast direction).

The high-order grating is a linear grating, a nonlinear grating, a binary grating or a non-uniform grating. More specifically, the higher order grating may be one or more of a binary grating, a linear grating, a curved grating, a reflective grating, a diffraction grating, and the like. The high order grating is located on the surface or inside the HCSEL 10.

Referring again to fig. 2, the utility model discloses semiconductor laser HCSEL 10's light-emitting direction perpendicular to the upper surface or the lower surface of semiconductor laser HCSEL horizontal cavity, and be bar or square facula, the light distribution is relatively even.

The semiconductor laser HCSEL10 of the utility model can emit light from the front side and also can emit light from the back side; the light can be emitted from the surface or from the inside; other forms of light extraction are also possible. In the practical application, can set up according to specific application scenario the utility model discloses semiconductor laser HCSEL 10's light-emitting mode. Referring to fig. 3, the non-limiting examples of the semiconductor laser HCSEL according to the present invention include a grating 1, a back light-emitting pattern of the grating on the surface in fig. 3(a), a surface light-emitting pattern of the grating 1 on the surface in fig. 3(b), a front light-emitting pattern of the grating in fig. 3(c), and a back light-emitting pattern of the grating in fig. 3 (d).

Referring to fig. 5-6, the present invention also relates to a semiconductor laser module 100, which includes a plurality of semiconductor laser chips and an optical element for focusing or expanding the light emitted from the chips. The semiconductor laser chip adopts the semiconductor laser HCSEL10 of the embodiment, the HCSEL10 is used as a novel integrated light source chip, collimation can be performed at one side, collimation is not performed at the other side, collimation can be performed in both directions, and the light distribution emitted by the HCSEL10 is relatively uniform. The utility model discloses semiconductor laser module can adopt single or a plurality of above-mentioned semiconductor laser HCSEL10 as laser chip, and a plurality of conductor laser HCSEL10 arrange into the chip array.

The utility model discloses a can arrange the HCSEL chip according to the long slow axis direction of emitting light face among the semiconductor laser module 100, arrange quantity and can be single or a plurality of. Using an optical element to emit light beams from the long slow axis direction of the semiconductor laser HCSEL10, and focusing the light beams into light spots in the required narrow strip direction by using an optical element with asymmetric curvature; and/or the light emitted from the HCSEL10 in the narrow direction and the fast axis is expanded to form a light spot in the required long-strip direction by another optical element. After the lens focuses or expands the angle, the fast axis light and the slow axis light are overlapped to be very uniform.

The utility model discloses in semiconductor laser module 100, a plurality of HCSEL10 has the characteristic of homogenization line beam output according to the long direction linear arrangement of luminous region, need not to adopt the coupling to optic fibre, and the ordinary optical element focus of accessible or angle expanding alright obtain homogenization line beam, and process is simple, low cost, and production efficiency is high, and is respond well, has very high price/performance ratio.

In some embodiments, the semiconductor laser module 100 includes a Horizontal Cavity Surface Emitting Laser (HCSEL)10, a heat sink 20, and an optical element (or mirror) 30. The plurality of semiconductor lasers HCSEL10 are arranged on the heat sink 20, the plurality of horizontal cavity surface emitting lasers HCSEL10 are arranged into a chip array according to the slow axis direction, namely, the horizontal cavity surface emitting lasers HCSEL10 are arranged together according to the direction of the length of a light emitting area, the heat sink 20 is used for radiating heat for the HCSEL chips, each semiconductor laser HCSEL10 can be independently used with one heat sink, or a plurality of HCSEL chips can be placed on the same heat sink (shown in figure 5), the HCSEL chips and the heat sink are connected by adopting solders, and the chips are connected in series.

Specifically, referring to fig. 5-6, the semiconductor laser module 100 is formed by arranging a plurality of HCSEL chips along a long direction line of a light emitting region, and focusing or expanding an angle by using a common optical element, wherein a narrow focusing direction corresponds to a long strip direction in the arrangement, i.e., a slow axis direction, and a long focusing line direction corresponds to a narrow chip direction, i.e., a fast axis direction, and the arrangement is different from the arrangement of the chips in the conventional semiconductor laser module. The chips are arranged on a heat sink 20, the chips are arranged together along the long direction of the light-emitting area, namely the slow axis direction, the heat sink is used for dispersing heat on the chips, the HCSEL chips are connected with the heat sink by adopting solder, and the chips are connected in series by adopting routing. As a non-limiting example, the HCSEL chip size is 5mm × 0.5mm, the corresponding angle is 0.5 degrees × 23 degrees, the power of each chip is 50W, the module emits light of about 150W, the light is arranged in a row according to the chip long direction, the chip light-emitting surface 5mm long direction is the slow axis Y direction, the divergence angle is small, the chip 0.5mm light-emitting surface narrow direction is the fast axis X direction, and the light-emitting angle is large.

The semiconductor laser module 100 further includes an optical element 30 for focusing or angle-expanding the outgoing light of the HCSEL chip. The geometric center of the single or a plurality of HCSEL10 arranged and the optical axis center of the lens are on the same central line, specifically, the length direction of the light emitting surface of the HCSEL chip or the length direction of the light emitting surface of the plurality of chips arranged, namely the direction with slow angle divergence, namely the Y direction of the slow axis, corresponds to the narrow direction of the focused line light spot; the narrow direction of the HCSEL10, i.e. the direction in which the angle diverges rapidly, the so-called fast axis X-direction, is the long-strip direction of the line spot after focusing.

The optical element 30 of the present invention may be a lens or two lenses, if a lens is a piece of lens, the curvature radius of the lens is perpendicular to each other, and if two lenses are made, the curvature radius direction of the lens is perpendicular to each other. In some embodiments, the lens is any one of a cylindrical lens, an aspherical cylindrical lens, a compound curved surface, a binary optical element, and a diffractive optical element, or a combination of any several of them. Preferably, the optical element 30 is a cylindrical lens.

As an example, the optical element 30 of the semiconductor laser module 100 includes two lenses, the directions of curvature radii R of the two lenses are perpendicular to each other, i.e., one curvature radius Rx is X direction, the Y direction Ry of curvature radius is 0, one curvature radius Ry is Y direction, the X direction Rx of curvature radius is 0, and each curvature radius R functions as: the curvature radius R is the length direction of the focusing spot line towards the length direction of the chip, and the function of the curvature radius R towards the short direction of the chip is the length direction of the focusing spot line.

In this embodiment, the optical element 30 includes a first lens 31 in the slow axis direction and a second lens 32 in the fast axis direction, the Y curvature direction Ry1 of the first lens 31 is the same as the slow axis Y direction of a single HCSEL chip or the Y direction of a plurality of HCSEL chips after being arranged, and is perpendicular to the fast axis X direction of the HCSEL chip, and the X curvature Rx1 of the first lens 31 is 0; the X-direction Rx2 of the second lens 32 is consistent with the X-direction of the fast axis of the HCSEL chip, is vertical to the Y-direction of the slow axis, and the Y-direction Rx2 of the second lens 32 is 0.

Light 40 (shown by a dotted line/a central line in fig. 6) coming out from the slow axis Y direction of the HCSEL chip is focused by the Ry curvature of the first optical lens 31, and the light focused by the first optical lens 31 passes through the second optical lens 32, and because the Ry2 of the second optical lens 32 is 0, the light is not changed and is directly focused to the distance required by the design; because the fast axis direction Rx1 of the first lens 31 is 0, the light 50 coming out from the chip fast axis x direction directly passes through the first lens 31 and reaches the second lens 32, and when passing through the second lens 32, the light is expanded to the required length due to the action of Rx 2; such as to form elongated spots 60 in fig. 6 and 7. By using the HCSEL chip, uniform lines of different shapes can be obtained by combining different common optical elements 30.

The first lens 31 of the above embodiment may include a single lens or a combination of lenses, and may be a spherical lens, an aspheric lens, a binary optical lens, a diffractive optical lens, etc. for focusing the light beam, and the focused light beam passing through the lens 1 is in a narrow direction of a uniform line spot.

The second lens 32 can be a single lens or a plurality of lenses or a combination of a plurality of lenses, can be a spherical lens, an aspheric lens, a binary optical lens, a diffractive optical lens and the like, and is used for expanding the angle of the light beam and forming flat-topped light after the light emitted by the chip is expanded; the flattened light after angle expansion corresponds to the long direction of the light spot at the required distance.

In the specific example of the semiconductor laser module 100 shown in fig. 6, the first lens 31 and the second lens 32 in front of the light-emitting surface of the laser chip array are single lenses. Wherein, the first lens 31 is a plano-convex lens, the curvature convex direction is far away from the laser chip, the second lens 32 is a plano-concave direction, and the concave direction faces the laser chip. Emergent light of the laser chip is focused through the first lens 31 and then is subjected to angle expansion through the second lens 32, the second lens 32 is located behind the first lens 31, and the distance from the second lens 32 to a focusing working surface is 100 mm. By way of non-limiting example, the optical parameters of lens 1 and lens 2 are as follows:

after the emergent light of the laser chip is focused and angle-expanded through the first lens and the second lens, the spot size of 1mmx50mm is obtained, referring to fig. 7. Referring to fig. 8, it can be seen that the light intensity in the light spot is uniform.

The first lens 31 and the second lens 32 of the embodiment of the utility model can be interchanged. In the array geometry of the laser chip, the center of the first lens 31 and the center of the second lens 32 are in a straight line.

The utility model discloses a semiconductor laser module 100, for the even module of direct semiconductor line, can be used to laser cladding, laser cleaning, laser inspection, laser excision, laser 3D scanning, laser heating, laser ablation, as laser equipment's laser output unit among laser equipment such as intellectual detection system, need not to carry out the fiber coupling, the system of application equipment is simple, the component is few, the process is simple, and is with low costs, semiconductor laser module 100's component can adopt ordinary sphere column mirror piece, low price, whole scheme price/performance ratio is compared in fiber coupling and other semiconductor chip array arrangement low costs.

Although embodiments of the present invention have been shown and described, it will be appreciated by those skilled in the art that various changes, modifications, substitutions and alterations can be made in these embodiments without departing from the principles and spirit of the invention, and are intended to be within the scope of the invention; the scope of the invention is defined by the appended claims and equivalents thereof.

Claims

1. A semiconductor laser, characterized by: the semiconductor laser is a Horizontal Cavity Surface Emitting Laser (HCSEL); the HCSEL emits light with one-direction collimated light beam and one-direction non-collimated light beam, or the two directions of the light emitted by the HCSEL are collimated light beams; the HCSEL comprises a grating, laser mode locking is realized through the grating, laser is coupled and output, and light is coupled and vertically output.

2. A semiconductor laser as claimed in claim 1 wherein: the grating is a high-order grating which is a linear grating, a nonlinear grating or a non-uniform grating; the HCSEL is in a horizontal oscillation mode and outputs a homogenized line beam; the high-order grating is positioned on the surface of or inside a horizontal cavity of the HCSEL; the light emitting direction of the HCSEL is perpendicular to the upper surface or the lower surface of the HCSEL horizontal cavity, and the light emitting direction of the HCSEL is strip-shaped or square.

3. A semiconductor laser as claimed in any one of claims 1 to 2 wherein: the HCSEL comprises a P electrode, an N electrode, a substrate, an excitation area and a grating which are laminated to form a horizontal cavity of the horizontal cavity surface emitting laser integrally, and a light emitting area is formed on the front surface or the back surface of the horizontal cavity; according to the position of the grating in the horizontal cavity, the HCSEL emits light directly from the surface of the horizontal cavity or from the inside correspondingly.

4. A semiconductor laser as claimed in claim 3 wherein: the N electrode, the substrate, the excitation area and the P electrode are horizontally laminated from top to bottom, and the grating is positioned on any layer or the upper surface and the lower surface; the shapes and sizes of the layers are mutually matched to form a flat laminated structure.

5. A semiconductor laser module characterized by: the semiconductor laser module comprises a plurality of semiconductor lasers as claimed in any one of claims 1 to 4 arranged as laser chips.

6. The semiconductor laser module of claim 5, wherein: the single or a plurality of HCSELs are linearly arranged according to the long direction of the light-emitting area to form a laser chip array, and the laser chip array directly outputs homogenized light beams without adopting a coupling optical fiber;

7. The semiconductor laser module of claim 6, wherein: the optical element is a lens; the geometric center of the single or the plurality of HCSELs after arrangement and the center of the optical axis of the lens are on the same central line; the length direction of the light emitting surface of the HCSEL or the length direction of the light emitting surface of the HCSEL array is the direction with slow angle divergence and the Y direction of the slow axis, and corresponds to the narrow direction of the focused line light spot; the narrow direction of the light emitting surface of the HCSEL corresponds to the direction of rapid angle divergence and also corresponds to the direction of the fast axis X, and corresponds to the long strip direction of the line spot after focusing.

8. The semiconductor laser module according to any one of claims 5 to 7, wherein: the optical element of the semiconductor laser module comprises one or more lenses; the directions of the curvature radius R of the lens are mutually vertical: namely, one curvature radius Rx is X direction, curvature radius Y direction Ry is 0, one curvature radius Ry is Y direction, curvature radius X direction Rx is 0; the function of each radius of curvature R is: the curvature radius R is in the length direction of a focusing light spot line towards the length direction of the light emitting surface of the HCSEL, and the function of the curvature radius R in the short direction of the chip is in the length direction of the focusing light spot line;

when the optical element is a piece, the curvature radiuses on the lenses are in a mutually perpendicular state; when the optical element comprises two pieces, the curvature radius directions of the lenses are relatively vertical;

the lens is any one or combination of any several of a cylindrical lens, a non-spherical cylindrical lens, a compound curved surface, a binary optical element and a diffractive optical element.

9. The semiconductor laser module of claim 8, wherein: the HCSELs are arranged on the heat sink, the HCSELs are arranged into a chip array according to the slow axis direction or the light emitting region length direction, and each HCSEL is independently arranged on the same heat sink by one heat sink or a plurality of HCSELs; the HCSEL is soldered to the heat sink and the HCSEL and HCSEL are electrically connected in series.

10. A laser apparatus comprising a laser output unit, characterized in that: the laser output unit includes the semiconductor laser module according to any one of claims 5 to 9.

11. The laser apparatus of claim 10, wherein: the laser equipment is one of laser cladding, laser cleaning, laser inspection, laser ablation, laser 3D scanning, laser heating, laser ablation, intelligent detection and the like.