CN213925000U - Microwave ion source assisted magnetron sputtering ion plating device - Google Patents
Microwave ion source assisted magnetron sputtering ion plating device Download PDFInfo
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- CN213925000U CN213925000U CN202023024105.0U CN202023024105U CN213925000U CN 213925000 U CN213925000 U CN 213925000U CN 202023024105 U CN202023024105 U CN 202023024105U CN 213925000 U CN213925000 U CN 213925000U
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Abstract
The utility model discloses a magnetron sputtering ion plating device assisted by a microwave ion source, which comprises an equipment stand, a sputtering target seat, a vacuum furnace body, a molecular pump and a resonant antenna component; the vacuum furnace body is arranged on the equipment stand, and the sputtering target holder is arranged on the outer side wall of the vacuum furnace body; the molecular pump is communicated to one side of the vacuum furnace body; the resonant antenna assembly comprises a power amplifier, a microwave monitor, a first waveguide, a second waveguide, a resonant antenna assembly and a short-circuit rod which are connected in sequence; the bottom surface of the power amplifier is arranged on the upper surface of the vacuum furnace body; the resonant antenna group is attached to the right side wall of the vacuum furnace body. The utility model uniformly guides the microwave into the magnetron sputtering equipment of the long rectangular target by the waveguide through the design and the mechanism of the resonant antenna and the waveguide aperture BJ26 of the power amplifier; thereby solving the problem that the microwave plasma can not be suitable for long magnetron sputtering equipment; a technique for effectively performing plasma-assisted post oxidation.
Description
Technical Field
The utility model belongs to the technical field of magnetron sputtering ion plating device and specifically relates to a microwave ion source assisted magnetron sputtering ion plating device.
Background
The Microwave auxiliary ion source is mostly used for depositing a diamond film by an MPCVD method, and a waveguide (WR340) with a fixed format is used for guiding Microwave plasma into a bell jar type vacuum furnace body and a cylindrical vacuum furnace body by the waveguide, so that the Microwave auxiliary ion source is not suitable for magnetron sputtering equipment of a long rectangular target, and magnetron sputtering of the long rectangular target lacks a corresponding waveguide, so that the existing plasma auxiliary magnetron sputtering optical ion plating equipment uses a radio frequency ion source which is called as an RF-ICP (radio frequency inductively coupled plasma) ion source, and the Microwave plasma (Microwave plasma) has the characteristics of strong ionization capacity, high plasma density (108-1014 cm-3), low air pressure (10-1Pa magnitude), stable performance and the like. High reactive particle activity, low ion energy, no high energy particle damage, no pollution, magnetic field confinement, and reduced interaction between the plasma and the wall of the reaction chamber. Is a low-pressure, high-density plasma source, can generate large-area uniform high-density plasma under lower pressure, and has more advantages than an RF-ICP (radio frequency inductively coupled plasma) ion source.
If the method can be applied to magnetron sputtering ion plating equipment, the problems can be successfully solved.
SUMMERY OF THE UTILITY MODEL
Utility model purpose: in order to solve the problems existing in the prior art, the utility model provides a magnetron sputtering ion plating device assisted by a microwave ion source, which solves the problem that microwave plasma can not be suitable for long magnetron sputtering equipment.
The technical scheme is as follows: in order to achieve the above purpose, the utility model can adopt the following technical proposal: a magnetron sputtering ion plating device assisted by a microwave ion source comprises an equipment stand, a sputtering target seat, a vacuum furnace body, a molecular pump and a resonant antenna component;
the vacuum furnace body is arranged on the equipment stand, and the sputtering target holder is at least one and is arranged on the outer side wall of the vacuum furnace body; the molecular pump is communicated to one side of the vacuum furnace body;
the resonant antenna assembly comprises a power amplifier, a microwave monitor, a first waveguide, a second waveguide, a resonant antenna group and a short-circuit rod which are connected in sequence;
the bottom surface of the power amplifier is arranged on the upper surface of the vacuum furnace body; the resonant antenna group is attached to and connected with the right side wall of the vacuum furnace body.
Further, the molecular pumps are divided into two groups; as the gas insulation design of 3 coating areas, the molecular pump is used for area isolation, so that the materials of each film layer are not easy to mix with each other.
Furthermore, the molecular pump is connected to the left side wall of the vacuum furnace body through a gate valve.
Furthermore, the first waveguide is a right-angle 90-degree bent waveguide; the second waveguide is a linear waveguide.
Furthermore, the first waveguide and the second waveguide are connected through a three-pin.
Furthermore, the number of the sputtering target seats is 3, a microwave auxiliary ionization source is also arranged, and multilayer films with hundreds of layers can be formed by using different coating materials in a reciprocating coating mode, so that the structural design of high-end optical coating is realized.
Furthermore, the waveguide aperture of the power amplifier is BJ 26.
Has the advantages that: the utility model has the advantages of it is following:
1) uniformly guiding microwaves into magnetron sputtering equipment of a long rectangular target by a waveguide through a resonant antenna design and mechanism according to the waveguide aperture BJ26 of the power amplifier; thereby solving the problem that the microwave plasma can not be suitable for long magnetron sputtering equipment; a technique for effectively performing plasma-assisted post oxidation;
2) compared with an RF-ICP ion source, the microwave plasma has the characteristics of strong ionization capacity, high plasma density, low gas pressure, stable performance and the like; high reactive particle activity, low ion energy, no high energy particle damage, no pollution, magnetic field confinement, and reduced interaction between the plasma and the wall of the reaction chamber. Can generate large-area uniform high-density plasma under lower air pressure.
Drawings
FIG. 1 is a schematic structural view of a magnetron sputtering ion plating apparatus assisted by a microwave ion source according to embodiment 1 of the present invention;
fig. 2 is a schematic structural diagram of a resonant antenna component in embodiment 1 of the present invention;
fig. 3 is a schematic diagram of the working principle of the power amplifier.
Detailed Description
Example 1:
referring to fig. 1-3, the utility model discloses a magnetron sputtering ion plating device assisted by a microwave ion source, which comprises an equipment stand 1, a sputtering target seat 2, a vacuum furnace body 3, a molecular pump 4 and a resonant antenna component 5;
the number of the molecular pumps 4 is two, and the molecular pumps 4 are connected to the left side wall of the vacuum furnace body 3 through gate valves 41; communicated to one side of the vacuum furnace body 3. As the gas insulation design of 3 coating areas, the molecular pump is used for area isolation, so that the materials of each film layer are not easy to mix with each other.
The vacuum furnace body 3 is arranged on the equipment stand 1, and the number of the sputtering target holders 2 is 3; the outer side walls of the vacuum furnace body 3 are uniformly arranged; in addition, a microwave auxiliary ionization source is also arranged, and the multilayer film with hundreds of layers can be formed by using different coating materials through reciprocating coating, so that the structural design of high-end optical coating is realized.
The resonant antenna component 5 comprises a power amplifier 51, a microwave monitor 52, a first waveguide 53, a second waveguide 55, a resonant antenna group 56 and a short-circuit rod 57 which are connected in sequence; the bottom surface of the power amplifier 51 is arranged on the upper surface of the vacuum furnace body 3; the resonant antenna group 56 is attached to the right side wall of the vacuum furnace body 3. The first waveguide 53 is a right angle 90 degree bend waveguide; the second waveguide 55 is a straight waveguide. The first waveguide 53 and the second waveguide 55 are connected by a triple pin 54.
The waveguide aperture of the power amplifier 51 is BJ 26. The magnetron sputtering device is characterized in that microwaves are uniformly guided into a long rectangular target through a waveguide and a resonant antenna design and mechanism; thereby solving the problem that the microwave plasma can not be suitable for long magnetron sputtering equipment; a technique for effectively performing plasma-assisted post oxidation.
Claims (7)
1. A magnetron sputtering ion plating device assisted by a microwave ion source is characterized by comprising an equipment stand (1), a sputtering target holder (2), a vacuum furnace body (3), a molecular pump (4) and a resonant antenna component (5);
the vacuum furnace body (3) is arranged on the equipment stand (1), and the sputtering target holder (2) is at least one and is arranged on the outer side wall of the vacuum furnace body (3); the molecular pump (4) is communicated to one side of the vacuum furnace body (3);
the resonant antenna assembly (5) comprises a power amplifier (51), a microwave monitor (52), a first waveguide (53), a second waveguide (55), a resonant antenna group (56) and a short-circuit rod (57) which are connected in sequence;
the bottom surface of the power amplifier (51) is arranged on the upper surface of the vacuum furnace body (3); the resonant antenna group (56) is attached to and connected with the right side wall of the vacuum furnace body (3).
2. The microwave ion source-assisted magnetron sputtering ion plating apparatus according to claim 1, characterized in that: the molecular pumps (4) are divided into two groups.
3. The microwave ion source-assisted magnetron sputtering ion plating apparatus according to claim 2, characterized in that: the molecular pump (4) is connected to the left side wall of the vacuum furnace body (3) through a gate valve (41).
4. The microwave ion source-assisted magnetron sputtering ion plating apparatus according to claim 1, characterized in that: the first waveguide (53) is a right-angle 90-degree bend waveguide; the second waveguide (55) is a straight waveguide.
5. The microwave ion source-assisted magnetron sputtering ion plating apparatus according to claim 4, characterized in that: the first waveguide (53) and the second waveguide (55) are connected through a three-pin (54).
6. The microwave ion source-assisted magnetron sputtering ion plating apparatus according to claim 1, characterized in that: the number of the sputtering target seats (2) is 3.
7. The microwave ion source-assisted magnetron sputtering ion plating apparatus according to claim 1, characterized in that: the waveguide caliber of the power amplifier (51) is BJ 26.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202023024105.0U CN213925000U (en) | 2020-12-16 | 2020-12-16 | Microwave ion source assisted magnetron sputtering ion plating device |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202023024105.0U CN213925000U (en) | 2020-12-16 | 2020-12-16 | Microwave ion source assisted magnetron sputtering ion plating device |
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| CN213925000U true CN213925000U (en) | 2021-08-10 |
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| CN202023024105.0U Active CN213925000U (en) | 2020-12-16 | 2020-12-16 | Microwave ion source assisted magnetron sputtering ion plating device |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115505887A (en) * | 2022-09-27 | 2022-12-23 | 南通派锐泰特精密科技有限公司 | Magnetron sputtering ion plating device with slot resonance antenna structure |
-
2020
- 2020-12-16 CN CN202023024105.0U patent/CN213925000U/en active Active
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115505887A (en) * | 2022-09-27 | 2022-12-23 | 南通派锐泰特精密科技有限公司 | Magnetron sputtering ion plating device with slot resonance antenna structure |
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