CN213877968U

CN213877968U - Heating radio frequency switch based on structure is super smooth

Info

Publication number: CN213877968U
Application number: CN202023234334.5U
Authority: CN
Inventors: 邓杨; 向小健; 郑泉水
Original assignee: Tsinghua University; Shenzhen Research Institute Tsinghua University
Current assignee: Tsinghua University; Shenzhen Research Institute Tsinghua University
Priority date: 2020-12-28
Filing date: 2020-12-28
Publication date: 2021-08-03
Anticipated expiration: 2030-12-28

Abstract

The utility model provides a heating radio frequency switch based on structure is super smooth, including basement, drive assembly, insulating layer, heating element and sliding part, the insulating layer is located in the basement, and the insulating layer has atomic level and levels, and inside the basement was located to drive assembly, sliding part's bottom surface had super smooth surface, and the inside of basement is located to heating element, and the outside of drive assembly is located to the heating element ring, drive assembly with be equipped with the insulating layer between the heating element. The sliding component can slide under the drive of the driving component, the heating element is arranged in the substrate, the heating element can directly transmit heat towards the insulating layer, the transmission efficiency is higher, the required heat is smaller, the heat insulation layer is arranged between the heating element and the driving component, the heat insulation layer can avoid the direct transmission of the temperature of the heating element to the driving component, the problem that the service life of the driving component is lower is avoided, the thickness of the whole radio frequency switch is thinner, and the occupied space is smaller.

Description

Heating radio frequency switch based on structure is super smooth

Technical Field

The utility model relates to a technical field of radio frequency micro-electromechanical system switch, concretely relates to heating radio frequency switch based on structure is super smooth.

Background

With the development of radar and wireless communication technologies, small-sized, low-power-consumption, high-performance, and multifunctional radio frequency devices are becoming the development trend in the radio field, radio frequency devices are developing towards miniaturization and integration, MEMS switches are coming, and RF MEMS switches gradually replace the conventional GaAs FET switches and become the development direction of radio frequency switches (RF switches). Compared with the traditional switch, the RF MEMS switch has the advantages of lower insertion loss, higher isolation, better linearity, lower power consumption, smaller volume and the like, can be easily integrated with an IC circuit, and has wide application prospect. At present, the conventional RF MEMS switch mainly includes an electrostatic driving mechanism, a thermal driving mechanism, an electromagnetic driving mechanism, a piezoelectric driving mechanism, and the like in terms of driving modes.

As a basic electronic component, the RF MEMS electrostatic switch has characteristics of low power consumption, low insertion loss, low crosstalk, high isolation, high linearity, and the like, compared to conventional P-I-N diode switches and FET field effect thyristor switches, and is considered to be one of the most important MEMS devices. Particularly, with the rapid development of a 5G communication system, a radar system, a satellite communication system, and a high performance RF chip system in recent years, the industry has raised higher requirements on power consumption, reliability, isolation, linearity, power handling capability, and the like of an underlying RF switch device, for example, an LTE-a antenna switch having a carrier aggregation function in the 5G system must meet a requirement that IIP3 is 90dBm, while an RF-MEMS RF switch is the only one capable of achieving IIP3>90 dBm. Since conventional solid-state semiconductor switches (P-I-N and FETs) rely on doped carrier conduction and the presence of contact barriers, the switches exhibit poor quality factor (Ron × Coff) and leakage current in the off-state, which severely affects the insertion loss, isolation, linearity of the switch, making such switches unsuitable for switching of high frequency radio frequency signals. The RF MEMS electrostatic switch conducts radio frequency signals by means of mechanical contact, physical isolation exists between signal lines, and therefore the RF MEMS electrostatic switch has low power consumption (nj), low insertion loss, high isolation degree and linearity, energy consumption and cost of a wireless communication system, a radar detection system and a satellite system can be greatly reduced, fidelity of radio frequency signal transmission is improved, and comprehensive performance of the system is remarkably improved. The development and application of the method become key technologies of advanced electronic equipment such as a wireless communication (5G) system, a radar system, a satellite system and the like.

Despite the advantages of RF MEMS electrostatic switches compared to widely used semiconductor radio frequency switches, the mechanical contact switching presents serious reliability problems. The contact or the insulating layer of the RF MEMS electrostatic switch is easy to damage in high-speed collision, so that the on-resistance is increased, a stronger heat effect is caused, the device fails, meanwhile, the damage of the insulating layer can also aggravate the accumulation of surface charges, and when the accumulation of the charges exceeds a critical value, the switch fails through self-electrostatic adsorption; the arc discharge of the contact point at the moment of disconnection can cause the melting of the contact point material, which causes the remarkable increase of the contact resistance and even the direct adhesion of the contact point and the conducting wire; when high-energy power passes through the switch, enough electrostatic force can be coupled between an upper contact and a lower contact or a polar plate, so that the switch is subjected to self-locking pull-in, the processing power of the RF MEMS electrostatic switch is usually below 1W, and the processing power of the semiconductor switch can reach 1-10W. The above is one of the main reasons affecting the reliability and application field of the RF MEMS, and the service life of the RF MEMS electrostatic switch is two orders of magnitude lower than that of the conventional semiconductor switch. In addition, the standard voltage used in the IC integrated circuit system is lower than 5V, and the driving voltage of the RF MEMS electrostatic switch is generally between 10V and 80V, which is one of the reasons why the RF MEMS electrostatic switch is rarely used in the wireless communication system of the mobile phone. In summary, improving power handling capability, reducing driving voltage, and improving reliability are key issues to be solved in further development of RF-MEMS electrostatic switches.

The research of the structure ultra-smooth technology is the phenomenon of no friction and no abrasion sliding between two or the same materials, and the initial research is limited to the ultra-smooth phenomenon of nano-scale, such as the ultra-smooth between multi-arm coaxial carbon nanotubes, the ultra-smooth between a nano probe and a two-dimensional material, and the like. In 2013, zhengquan professor for the first time found the ultra-slip phenomenon between hopg (high Oriented cementitious graphite) sheet materials at micron scale, which marks the transition of ultra-slip from basic research to applicable technical research process. The structural ultra-smooth technology is a phenomenon that frictional wear caused by non-axiality contact is almost zero, but certain friction may still exist in the structural ultra-smooth state, the friction force can be reduced by increasing the temperature between ultra-smooth interfaces, but the temperature of the electrode element can be synchronously increased by increasing the temperature, so that the service life of the electrode element is reduced.

SUMMERY OF THE UTILITY MODEL

An object of the utility model is to provide a heating radio frequency switch based on structure is super smooth to adopt the mode of heating to reduce frictional force among the solution prior art, can lead to the technical problem that electrode component's life reduces.

In order to achieve the above object, the utility model adopts the following technical scheme: the utility model provides a heating radio frequency switch based on structure is super smooth, includes basement, driver part, insulating layer and sliding part, the insulating layer is located on the basement, just the insulating layer has atomic level and levels the surface, driver part locates inside the basement, sliding part's bottom surface has super smooth surface, sliding part passes through super smooth surface with the surface contact of insulating layer, and place in on the insulating layer, still include heating element, heating element locates the inside of basement, heating element ring is located the outside of driver part, driver part with be equipped with the insulating layer between the heating element.

Furthermore, the heat insulation layer comprises a heat insulation layer and a dielectric layer, the heat insulation layer is annularly arranged on the outer side of the dielectric layer, and the dielectric layer is annularly arranged on the outer side of the driving part.

Further, the heat dissipation structure also comprises a heat dissipation layer arranged at the bottom of the substrate.

Further, the heat dissipation layer is made of a porous material.

Further, the heat dissipation layer comprises support frames and at least one cavity arranged between the support frames, and the cavity is opposite to the heating element.

Further, the thicknesses of the heat-insulating layer and the dielectric layer are respectively 1-100 nanometers.

Further, the thicknesses of the heat-insulating layer and the dielectric layer are respectively 2-50 nanometers.

Further, the sliding member is driven in a charge driving manner.

Further, a charging medium layer is arranged on the top of the sliding part, the driving part at least comprises a first driving electrode and a second driving electrode, and a voltage difference is formed between the first driving electrode and the second driving electrode.

The utility model provides a heating radio frequency switch based on structure is super smooth has: compared with the prior art, the utility model discloses a heating radio frequency switch based on structure is super smooth, the super smooth contact between insulating layer and the super sliding surface, sliding part can slide under drive unit's drive, inside at the basement sets up heating element, heating element can be direct towards insulating layer transmission heat, its transmission efficiency is higher, the heat that needs is littleer, make frictional force between insulating layer and the sliding part further reduction after the heating, can realize lower driving voltage, high life and power processing ability, be provided with the insulating layer between heating element and the driving part simultaneously, this insulating layer can avoid heating element's temperature direct transfer to drive unit, the lower problem of drive unit life has been avoided, and whole radio frequency switch's thickness is thinner, the space that occupies is less.

Drawings

In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the embodiments or the technical solutions in the prior art will be briefly described below, and it is obvious that the drawings in the following description are some embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to these drawings without creative efforts.

Fig. 1 is a schematic structural diagram of a heating rf switch based on structural ultra-smoothness according to an embodiment of the present invention;

fig. 2 is a schematic cross-sectional structural diagram of a heating rf switch based on structural ultra-smoothness provided by an embodiment of the present invention.

Description of reference numerals:

1. a substrate; 2. a drive member; 3. an insulating layer; 4. a sliding member; 5. a heating element; 6. a heat dissipation layer; 7. a heat-insulating layer; 8. a dielectric layer; 21. a first drive electrode; 22. a second drive electrode; 41. an ultra-smooth surface; 42. and a charging medium layer.

Detailed Description

The technical solution of the present invention will be described clearly and completely with reference to the accompanying drawings, and obviously, the described embodiments are some, but not all embodiments of the present invention. Based on the embodiments in the present invention, all other embodiments obtained by a person skilled in the art without creative work belong to the protection scope of the present invention.

In the description of the present invention, it should be noted that the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer", and the like indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings, and are only for convenience of description and simplification of description, but do not indicate or imply that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and thus, should not be construed as limiting the present invention. Furthermore, the terms "first," "second," and "third" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance.

In the description of the present invention, it is to be noted that, unless otherwise explicitly specified or limited, the terms "mounted," "connected," and "connected" are to be construed broadly, and may be, for example, fixedly connected, detachably connected, or integrally connected; can be mechanically or electrically connected; they may be connected directly or indirectly through intervening media, or they may be interconnected between two elements. The specific meaning of the above terms in the present invention can be understood in specific cases to those skilled in the art.

Because the ultra-slip of a large scale cannot be realized for a long time, the phenomenon that the friction coefficient is in the order of thousandth or lower is often called as ultra-slip in documents for over ten years; the phenomenon that the initial friction and wear caused by the non-degree-of-concentricity contact are almost zero is called 'structural lubrication', and the 'ultra-lubricity' referred to in the invention refers to the phenomenon that the friction and wear caused by the non-degree-of-concentricity contact are almost zero.

Super slippery surface, be the vice partly of super-smooth among the prior art, between the super-smooth surface of two contacts of current super-smooth pair, frictional force is almost zero during relative sliding, coefficient of friction is less than thousandth, wearing and tearing are zero.

Furthermore, the technical features mentioned in the different embodiments of the invention described below can be combined with each other as long as they do not conflict with each other.

Referring to fig. 1 and fig. 2, the structure-based ultra-smooth heating rf switch of the present invention will now be described. The structure-based ultra-smooth heating radio frequency switch comprises a substrate 1, a driving part 2, an insulating layer 3, a sliding part 4 and a heating element 5, wherein the driving part 2 is generally arranged inside the substrate 1, the substrate 1 is generally selected from insulating materials or semiconductor materials, the semiconductor materials are preferably high-resistance silicon, and the insulating materials are generally preferably silicon dioxide, silicon carbide, sapphire, mica and the like.

The insulating layer 3 is disposed on the substrate 1, and the insulating layer 3 has an atomic flatness, so that the sliding component 4 having the super-sliding surface 41 can make super-sliding contact with the insulating layer 3 and achieve zero-friction sliding, wherein the insulating layer 3 is generally made of silicon oxide, the insulating layer 3 is generally thin, generally nano-scale, and generally 1 to 100 nm in thickness, and preferably, the insulating layer 3 is 2 to 50 nm in thickness. The driving component 2 is arranged in the substrate 1, the bottom surface of the sliding component 4 is provided with an ultra-sliding surface 41, the sliding component 4 is contacted with the insulating layer 3 through the ultra-sliding surface 41 and is arranged on the insulating layer 3, and the driving component 2 drives the sliding component 4 to slide on the insulating layer 3.

Wherein, the bottom surface of the sliding component 4 has a super-sliding surface 41 which can be made of HoPG graphite sheet, the sliding component 4 contacts with the insulating layer 3 through the super-sliding surface 41, and the sliding component 4 can realize the sliding with extremely low friction under the driving of the driving component 2. The top of the sliding member 4 is also provided with a charging medium layer 42, the inside of which charging medium layer 42 has a certain amount of electric charge, so that the sliding member 4 can be driven by the electric charge.

The heating element 5 is arranged in the substrate 1, and the temperature emitted by the heating element 5 can be directly transferred to the insulating layer 3, so that the utilization efficiency of heat can be improved. The heat generated by the heating element 5 can raise the temperature of the contact surface between the insulating layer 3 and the sliding component 4, and at the moment, the friction force between the insulating layer 3 and the sliding component 4 can be further reduced, the friction force can be almost zero when the sliding component slides relatively, the friction coefficient is far less than one per thousand, and the abrasion is zero.

The heating element 5 can raise the temperature of the insulating layer 3, the temperature is generally 100 to 200 degrees, the heating mode can be electric heating, and heating wires or heating resistors are uniformly arranged in the substrate 1, and the positions of the driving part 2 need to be avoided by the arrangement of the heating wires and the heating resistors, so that the driving part 2 is prevented from being directly heated, and the service life of the driving part 2 is shortened. I.e. the heating element 5 is arranged around the outside of the drive member 2.

Preferably, the heating element 5 is a heating wire, the heating wire is uniformly wound and distributed inside the substrate 1, and the heating element 5 is not arranged on two sides of the driving element, and in addition, in order to further improve the service life of the whole driving part 2, the driving part 2 which is high temperature resistant can be selected, for example, a conducting wire and an electrode which are made of copper materials are adopted, the influence of the temperature is less, and the performance and the service life of the driving part 2 are not influenced.

Preferably, a heat insulation layer is further arranged inside the substrate 1, and the heat insulation layers are located between the heating element 5 and the driving component 2, so that the heat insulation effect can be achieved, and the heating temperature of the driving component 2 is prevented from being too high. The heat insulation layer generally comprises two layers, namely a heat insulation layer 7 and a dielectric layer 8, the heat insulation layer 7 is generally arranged on the outer side of the dielectric layer 8, the heat insulation layer 7 can be made of heat insulation materials, namely the dielectric layer 8 is closer to the driving part 2, and the heat insulation layer 7 is far away from the driving part 2; wherein the positions of the insulating layer 7 and the dielectric layer 8 can also be adjusted, and are not limited in this respect.

Preferably, the insulating layer 7 and the dielectric layer 8 can be made of two different materials, and the thicknesses thereof are relatively thin, and the thicknesses of the insulating layer 7 and the dielectric layer 8 are generally 1 to 100 nanometers, preferably 2 to 50 nanometers respectively.

Preferably, the bottom of the heating element 5 is further provided with a heat dissipation layer 6, so that the temperature emitted by the heating element 5 is prevented from being transmitted downwards, the ambient temperature and the service life of the bottom material are influenced, and the heat dissipation of the heating element 5 can be accelerated through the heat dissipation layer 6, so that the heating temperature is prevented from being too high.

Preferably, the heat dissipation layer 6 can be directly made of a porous material, such as a polysilicon material, and the porous material has a plurality of through holes inside, so that heat dissipation can be realized in an accelerated manner.

The heat dissipation layer 6 can also adopt a large-cavity structure to realize heat dissipation of air, and comprises a support frame, wherein the support frame can adopt an annular support or a single support block, the annular support frame or the support block is arranged below the heat dissipation layer 6, a large cavity can be formed inside the annular support frame for heat dissipation, and the direct transmission of heat of the heating element 5 to a device below the cavity can be avoided.

Preferably, in order to ensure better heat dissipation efficiency, a cavity is arranged right below the heating resistor or the heating wire, and the support frame can be arranged at other places, so that a better heat dissipation effect can be achieved. And the lower part of the support frame can be made of heat conduction materials, so that the heat dissipation surface can be enlarged, and the heat dissipation efficiency is accelerated.

The driving member 2 mainly functions to drive the sliding member 4 to slide on the surface of the insulating layer 3, and the driving method generally adopts a charge driving method, which has the advantage of high driving stability.

The charging medium layer 42 is disposed on the top of the sliding member 4, a certain amount of electric charges are charged in the charging medium layer 42, the driving member 2 includes a first driving electrode 21 and a second driving electrode 22, the first driving electrode 21 and the second driving electrode can be connected by a conducting wire, a voltage difference exists between the first driving electrode 21 and the second driving electrode 22, and the sliding member 4 can be driven to move by forming a tolerance on two sides of the sliding member 4.

As an alternative embodiment of the present invention, the in-plane continuous sliding of the sliding member 4 can be realized by adjusting the number of the driving electrodes, the arrangement, and the size of the sliding member 4.

As an alternative embodiment of the present invention, the thermal insulation layer may be made of a specific thermal insulation material, such as a porous material, which is not limited in this embodiment.

It should be understood that the above examples are only for clarity of illustration and are not intended to limit the embodiments. Other variations and modifications will be apparent to persons skilled in the art in light of the above description. And are neither required nor exhaustive of all embodiments. And obvious variations or modifications can be made without departing from the scope of the invention.

Claims

1. The structure ultra-smooth based heating radio frequency switch comprises a substrate, a driving part, an insulating layer and a sliding part, wherein the insulating layer is arranged on the substrate and is provided with an atomic-level flat surface, the driving part is arranged in the substrate, the bottom surface of the sliding part is provided with an ultra-smooth surface, the sliding part is in contact with the surface of the insulating layer through the ultra-smooth surface and is arranged on the insulating layer, and the structure ultra-smooth based heating radio frequency switch is characterized in that: the heating element is arranged in the substrate, the heating element is arranged on the outer side of the driving part in a surrounding mode, and a heat insulation layer is arranged between the driving part and the heating element.

2. The structurally ultra-smooth based heated radio frequency switch of claim 1, wherein: the heat insulation layer comprises a heat insulation layer and a dielectric layer, the heat insulation layer is annularly arranged on the outer side of the dielectric layer, and the dielectric layer is annularly arranged on the outer side of the driving part.

3. The structurally ultra-smooth based heated radio frequency switch of claim 1, wherein: the heat dissipation layer is arranged at the bottom of the substrate.

4. The structurally ultra-smooth based heated radio frequency switch of claim 3, wherein: the heat dissipation layer is made of porous materials.

5. The structurally ultra-smooth based heated radio frequency switch of claim 3, wherein: the heat dissipation layer comprises support frames and at least one cavity arranged between the support frames, and the cavity is opposite to the heating element.

6. The structurally ultra-smooth based heated radio frequency switch of claim 2, wherein: the thicknesses of the heat-insulating layer and the dielectric layer are respectively 1-100 nanometers.

7. The structurally ultra-smooth based heated radio frequency switch of claim 6, wherein: the thicknesses of the heat-insulating layer and the dielectric layer are respectively 2-50 nanometers.

8. The structurally ultra-smooth based heated radio frequency switch of any of claims 1 to 7, wherein: the sliding member is driven in a charge driving manner.

9. The structurally ultra-smooth based heated radio frequency switch of claim 8, wherein: the top of the sliding part is provided with a charging medium layer, the driving part at least comprises a first driving electrode and a second driving electrode, and a voltage difference is formed between the first driving electrode and the second driving electrode.