CN111884644B - Parallel RF MEMS switch based on structure ultra-slip - Google Patents
Parallel RF MEMS switch based on structure ultra-slip Download PDFInfo
- Publication number
- CN111884644B CN111884644B CN202010596400.9A CN202010596400A CN111884644B CN 111884644 B CN111884644 B CN 111884644B CN 202010596400 A CN202010596400 A CN 202010596400A CN 111884644 B CN111884644 B CN 111884644B
- Authority
- CN
- China
- Prior art keywords
- insulating layer
- sliding
- parallel
- driving
- mems switch
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 239000000758 substrate Substances 0.000 claims abstract description 21
- 239000000463 material Substances 0.000 claims description 9
- 239000004065 semiconductor Substances 0.000 claims description 8
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 6
- 239000010439 graphite Substances 0.000 claims description 5
- 229910002804 graphite Inorganic materials 0.000 claims description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical group O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 4
- 239000011810 insulating material Substances 0.000 claims description 4
- 229910052710 silicon Inorganic materials 0.000 claims description 3
- 239000010703 silicon Substances 0.000 claims description 3
- 239000010445 mica Substances 0.000 claims description 2
- 229910052618 mica group Inorganic materials 0.000 claims description 2
- 229910052594 sapphire Inorganic materials 0.000 claims description 2
- 239000010980 sapphire Substances 0.000 claims description 2
- -1 siC Inorganic materials 0.000 claims description 2
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 2
- 229910004298 SiO 2 Inorganic materials 0.000 claims 1
- 238000004891 communication Methods 0.000 description 8
- 238000011161 development Methods 0.000 description 7
- 238000002955 isolation Methods 0.000 description 6
- 230000007246 mechanism Effects 0.000 description 5
- 238000011160 research Methods 0.000 description 5
- 238000005299 abrasion Methods 0.000 description 4
- 238000003780 insertion Methods 0.000 description 4
- 230000037431 insertion Effects 0.000 description 4
- 238000012545 processing Methods 0.000 description 4
- 238000009825 accumulation Methods 0.000 description 3
- 230000005540 biological transmission Effects 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000009471 action Effects 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 230000000903 blocking effect Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 230000002776 aggregation Effects 0.000 description 1
- 238000004220 aggregation Methods 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 239000002041 carbon nanotube Substances 0.000 description 1
- 229910021393 carbon nanotube Inorganic materials 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000010891 electric arc Methods 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 239000000523 sample Substances 0.000 description 1
- 230000008054 signal transmission Effects 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/94—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the way in which the control signals are generated
- H03K17/96—Touch switches
Landscapes
- Micromachines (AREA)
Abstract
The invention provides a parallel RF-MEMS switch, which is characterized in that: the device comprises a substrate, a driving part, an insulating layer and a sliding part, wherein the driving part is arranged in the substrate, and is level with the surface of the substrate and keeps level with nanometer level; the sliding part is provided with a charging dielectric layer and an atomically flat ultra-sliding surface, is contacted with the insulating layer through the ultra-sliding surface and is arranged on the insulating layer; the sliding part can be driven to slide in the horizontal direction in the plane, and the switch is realized by adjusting the overlapping and separating of the driving part and the sliding part in the vertical plane.
Description
Technical Field
The invention belongs to the technical field of radio frequency micro-electromechanical system switches (RF MEMS SWITCH), and particularly relates to a parallel RF MEMS switch based on structure ultra-sliding.
Background
With the development of radar and wireless communication technologies, small-sized, low-power-consumption, high-performance and multifunctional radio frequency devices have become a development trend in the radio field, and the radio frequency devices have been developed toward miniaturization and integration, and MEMS switches have been developed, and RF MEMS switches have gradually replaced conventional GaAs FET switches and have become a development direction of radio frequency switches (RF switches). Compared with the traditional switch, the RF MEMS switch has the advantages of lower insertion loss, higher isolation, better linearity, lower power consumption, smaller volume and the like, can be easily integrated with an IC circuit, and has wide application prospect. Currently, the existing RF MEMS switch mainly has several driving modes, such as an electrostatic driving mechanism, a thermal driving mechanism, an electromagnetic driving mechanism, and a piezoelectric driving mechanism.
The RF MEMS electrostatic switch, which is a basic electronic component, has characteristics of low power consumption, low insertion loss, low crosstalk, high isolation, high linearity, etc., as compared with the conventional P-I-N diode switch and FET field effect thyristor switch, and is considered as one of the most important MEMS devices. In particular, with the rapid development of 5G communication systems, radar systems, satellite communication systems, and high performance radio frequency chip systems in recent years, industry has put higher demands on power consumption, reliability, isolation, linearity, power handling capability, etc. of the underlying RF radio frequency switching devices, for example, an LTE-a antenna switch with carrier aggregation function in a 5G system must meet the requirement of iip3=90 dBm, and an RF-MEMS radio frequency switch is the only switch capable of achieving iip3>90 dBm. Since conventional solid-state semiconductor switches (P-I-N and FETs) rely on the presence of doped carrier conduction and contact barriers, the switches exhibit a poor quality factor (Ron x Coff) and have leakage currents in the off state, which severely affects the insertion loss, isolation, linearity of the switch, making such switches unsuitable for switching of high frequency radio frequency signals. The RF MEMS electrostatic switch conducts radio frequency signals by means of mechanical contact, and physical isolation exists between signal wires, so that the RF MEMS electrostatic switch has low power consumption (nj), low insertion loss, high isolation and linearity, and can greatly reduce the energy consumption and cost of a wireless communication system, a radar detection system and a satellite system, improve the fidelity of radio frequency signal transmission and remarkably improve the comprehensive performance of the system. The development and application of the system have become key technologies of advanced electronic equipment such as a wireless communication (5G) system, a radar system, a satellite system and the like.
Although RF MEMS electrostatic switches have many advantages over widely used semiconductor RF switches, the mechanical contact on-off approach presents serious reliability problems. The contact or insulating layer of the RF MEMS electrostatic switch is easy to damage in high-speed collision, so that on-resistance is increased, stronger thermal effect is caused, the device is invalid, meanwhile, the damage of the insulating layer can aggravate accumulation of surface charges, and when the charge accumulation amount exceeds a critical value, the switch is invalid due to self-electrostatic adsorption; arc discharge of the contact at the moment of disconnection can cause melting of contact materials, so that contact resistance is remarkably increased and even the contact is directly adhered to a conducting wire; when high-energy power passes through the switch, enough electrostatic force is coupled between the upper contact and the lower contact or the polar plate, so that the switch is self-locking and attracted, the processing power of the RF MEMS electrostatic switch is generally below 1W, and the semiconductor switch can reach 1-10W. The service life of the RF MEMS electrostatic switch is more than two orders of magnitude lower than that of a traditional semiconductor switch. In addition, the standard voltage used in the IC integrated circuit system is lower than 5V, and the driving voltage of the RF MEMS electrostatic switch is generally between 10V and 80V, which is one of the reasons why the RF-MEMS electrostatic switch is rarely used in the wireless communication system of the mobile phone. In summary, the improvement of the power processing capability, the reduction of the driving voltage and the improvement of the reliability are critical issues in the further development of the RF-MEMS electrostatic switch.
The structure super-slip technology researches on the phenomenon of friction-free and abrasion-free slip between two or the same materials, and the initial research is limited to the phenomenon of super-slip on the nanometer scale, such as super-slip between multi-arm coaxial carbon nanotubes, super-slip between a nano probe and a two-dimensional material, and the like. In 2013, zheng Quanshui taught the first discovery of the phenomenon of ultraslip between HOPG (Highly Oriented Pyrolytic Graphite) sheets of material on the micrometer scale, which marks the transition of ultraslip from basic research to applicable technical research procedures. According to the structure super-sliding principle, the invention provides a parallel RF MEMS switch based on mechanism super-sliding, which can reduce driving voltage and greatly improve service life and power processing capability of the switch.
Disclosure of Invention
The invention provides a parallel RF MEMS switch based on structure super-sliding by utilizing low friction and no abrasion surface sliding motion between a super-sliding structure and a flat heterogeneous material. When a driving voltage is applied between the driving parts, the driving parts carry positive and negative opposite charges, the sliding parts with the charging medium layers slide onto the driving parts with the opposite charges under the action of the charges, and at the moment, a large capacitance is formed between the driving parts and the sliding parts, radio frequency signals are almost totally reflected, and transmission is cut off; when a reverse driving voltage is applied between the driving parts, positive charges and negative charges carried by the driving parts are exchanged, the sliding part slides onto the other driving part under the action of the charges, at the moment, the front driving part and the sliding part have no opposite area in the vertical direction, the capacitance is small, and the radio frequency signal can realize basically lossless transmission.
Specifically, the parallel RF-MEMS switch provided by the invention is realized by the following scheme:
The parallel RF-MEMS switch comprises a substrate, a driving part, an insulating layer and a sliding part, wherein the driving part is arranged in the substrate, is level with the surface of the substrate and keeps level at a nanometer level; the sliding part is provided with a charging dielectric layer and an atomically flat ultra-sliding surface, is contacted with the insulating layer through the ultra-sliding surface and is arranged on the insulating layer; the sliding part can be driven to slide in the horizontal direction in the plane, the relative position of the sliding part and the driving part can be changed, and the switch is realized by adjusting the overlapping and separating of the driving part and the sliding part in the vertical plane.
Further, the driving part includes a plurality of driving parts, and preferably, the driving part includes a first driving part and a second driving part.
Further, the driving part includes a driving electrode.
Further, the sliding member includes a dielectric layer and a graphite layer having an ultra-slip surface, and more preferably the graphite layer is HOPG.
Further, the substrate is selected from an insulating material or a semiconductor material.
Further, the semiconductor material is preferably a high group silicon; the insulating material is preferably selected from SiO2, siC, sapphire, mica and the like.
Further, the insulating layer is preferably a silicon oxide layer.
Further, the thickness of the insulating layer is nano-scale.
Further, the thickness of the insulating layer is preferably 2 to 50 nm.
Further, the driving means for driving the sliding member to slide in the horizontal direction in the plane is a charge driving.
The invention utilizes a sandwich structure which sequentially comprises a driving part, an insulating layer and a sliding part with a charging medium layer from bottom to top to realize the abrasion-free sliding of the sliding part with extremely low friction force in the plane of the surface of the flat insulating layer; when in the disconnected state, the capacitance between the sliding part and the driving part is extremely small, so that radio frequency signals have little loss; when in the closed state, the sliding part and the driving part form a larger capacitor due to the insulating layer with the nano-scale thickness, and the radio frequency signals are totally reflected. The on-off of the radio frequency switch can be controlled by setting a voltage control time sequence. Therefore, the invention has extremely low friction force and no abrasion, can realize lower driving voltage, extremely long service life and power processing capability, is hopeful to break through a main obstacle restricting the service life of the RFMEMS electrostatic switch, promotes the practical process, and promotes the spanning development of the research of electronic equipment such as a domestic wireless communication system (5G), a high-performance phased array radar, a satellite communication system and the like.
Drawings
FIG. 1 is a schematic diagram of the on state of a parallel RF-MEMS switch of the present application;
FIG. 2 is a top view of the on state of the shunt RF-MEMS switch of the present application;
FIG. 3 is a schematic diagram of the blocking state of the parallel RF-MEMS switch of the present application;
FIG. 4 is a top view of the blocking state of the shunt RF-MEMS switch of the present application;
fig. 5 is a cross-sectional view of a substrate with parallel RF-MEMS embedded drive electrodes of the present application.
Reference numerals: the high-voltage power amplifier comprises an HOPG super slip sheet, an insulating layer, a substrate, a first driving electrode, a second driving electrode and a charging medium layer, wherein the HOPG super slip sheet is arranged on the substrate, the insulating layer is arranged on the substrate, the first driving electrode is arranged on the substrate, the second driving electrode is arranged on the substrate, and the charging medium layer is arranged on the substrate.
Detailed Description
Embodiments of the invention are further described below with reference to the accompanying drawings:
the super-slip sheet is a part of a super-slip pair in the prior art, the friction force between two contact super-slip surfaces of the existing super-slip pair is almost zero during relative sliding, the friction coefficient is smaller than one thousandth, and the abrasion is zero.
As shown in fig. 1, the parallel RF-MEMS switch is composed of a high-resistance silicon substrate 3, a first driving electrode 4, a second driving electrode 5, a nanoscale insulating layer 2, an HOPG super-slip sheet 1, and a positively charged dielectric layer 6. The first drive electrode 4 and the second drive electrode 5 are embedded in the substrate 3; the surfaces of the substrate 3, the first driving electrode 4 and the second driving electrode 5 are flush and kept nanoscale flat; the insulating layer 2 covers the first driving electrode 4 and the second driving electrode 5, is used for insulating the HOPG super-slip sheet from the first driving electrode 4 and the second driving electrode 5, and the thickness of the insulating layer 2 is controlled between 2nm and 50nm, and the gap is used for ensuring smaller excitation voltage. The HOPG super-slip sheet with the charging medium layer 6 is placed on the insulating layer, and forms a super-slip contact pair with the insulating layer 2, the initial position of the super-slip contact pair is opposite to the first driving electrode 4, and a certain amount of charges are charged in the charging medium layer 6. Because the HOPG super-slip sheet 1 with the charging medium layer has an atomically flat super-slip surface, the HOPG super-slip sheet can slide on the surface of the insulating layer 2 with extremely low friction without abrasion, and meanwhile, adhesion failure caused by charge accumulation on an electrode can be avoided, and the super-long service life can be realized.
The workflow of the parallel RF-MEMS switch is as follows: in fig. 1 and fig. 2, the radio frequency switch is in an on state, and at this time, there is no overlapping area between the HOPG super slip sheet 1 with the positive charge medium layer 6 and the second driving electrode 5 in the vertical direction, the capacitance is near zero, and the radio frequency signal can completely pass through without reflection loss. As shown in fig. 3 and 4, when a driving voltage is applied between the first driving electrode 4 and the second driving electrode 5, the first driving electrode 4 is positively charged, the second driving electrode 5 is negatively charged, and at this time, the HOPG super-sliding sheet 1 slides leftwards to the upper side of the first driving electrode 5 under the attractive force of the charges, and as the thickness of the insulating layer 2 is nano-scale, a larger capacitance is formed between the HOPG super-sliding sheet 1 and the second driving electrode 5, the radio frequency signal is completely reflected, and the transmission is cut off. When a reverse voltage is applied between the first driving electrode 4 and the second driving electrode 5, the first driving electrode 4 is negatively charged, the second driving electrode 5 is positively charged, at this time, the HOPG super-sliding sheet 1 slides to the upper side of the first driving electrode 4 by the charge attractive force of the right direction in the horizontal direction, as shown in fig. 1 and 2, at this time, the second driving electrode 5 and the HOPG super-sliding sheet 1 have no opposite area in the vertical direction, the capacitance is close to zero, and the radio frequency signal can pass through without loss.
Other embodiments can realize in-plane continuous sliding of the HOPG super-slip sheet by adjusting the number and arrangement of the driving electrodes and the dimension of the HOPG super-slip sheet.
The above description is merely of preferred embodiments of the present invention, and the scope of the present invention is not limited to the above embodiments, but all equivalent modifications or variations according to the present disclosure will be within the scope of the claims.
Claims (7)
1. A parallel RF MEMS switch comprising a substrate, a drive member, an insulating layer, and a slider member, characterized in that: the driving component is arranged in the substrate, is flush with the surface of the substrate, and at least comprises a first driving component and a second driving component, wherein the driving component is a driving electrode; the sliding part is provided with a charging medium layer, the inside of the charging medium layer is provided with positive charges and an ultra-sliding surface, the sliding part is contacted with the insulating layer through the ultra-sliding surface and is arranged on the insulating layer, and the thickness of the insulating layer is 1-100 nanometers; the sliding part can be driven to slide on the insulating layer under the drive of electric charges and can change the relative positions of the sliding part and the driving part, and when the sliding part is in a disconnected state, the capacitance between the sliding part and the driving part is extremely small, so that radio frequency signals are hardly lost; when in the closed state, the sliding component and the driving component form a large capacitance, and the radio frequency signal is completely reflected.
2. The parallel RF MEMS switch, as recited in claim 1, wherein: the sliding member further includes a graphite layer having an ultra-slip surface.
3. The parallel RF MEMS switch, as recited in claim 2, wherein: the graphite layer is HOPG.
4. The parallel RF MEMS switch, as recited in claim 1, wherein: the substrate is selected from an insulating material or a semiconductor material.
5. The parallel RF MEMS switch, as recited in claim 4, wherein: the semiconductor material is high-resistance silicon; the insulating material is SiO 2, siC, sapphire or mica.
6. The parallel RF MEMS switch, as recited in any of claims 1-5, wherein: the insulating layer is a silicon oxide layer.
7. The parallel RF MEMS switch, as recited in any of claims 1-5, wherein: the insulating layer has an atomically smooth surface, and the thickness of the insulating layer is 2-50 nanometers.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010596400.9A CN111884644B (en) | 2020-06-28 | 2020-06-28 | Parallel RF MEMS switch based on structure ultra-slip |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010596400.9A CN111884644B (en) | 2020-06-28 | 2020-06-28 | Parallel RF MEMS switch based on structure ultra-slip |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN111884644A CN111884644A (en) | 2020-11-03 |
| CN111884644B true CN111884644B (en) | 2024-04-19 |
Family
ID=73158057
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202010596400.9A Active CN111884644B (en) | 2020-06-28 | 2020-06-28 | Parallel RF MEMS switch based on structure ultra-slip |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN111884644B (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112645280A (en) * | 2020-12-30 | 2021-04-13 | 深圳清华大学研究院 | Processing technology of radio frequency switch |
| CN114873555A (en) * | 2022-04-11 | 2022-08-09 | 北京大学 | Method and device for modulating friction force between super-lubrication interfaces |
| CN115798949A (en) * | 2022-12-09 | 2023-03-14 | 深圳清华大学研究院 | RF MEMS switch and electronic equipment |
Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5121089A (en) * | 1990-11-01 | 1992-06-09 | Hughes Aircraft Company | Micro-machined switch and method of fabrication |
| WO1993025003A1 (en) * | 1992-06-01 | 1993-12-09 | Yale University | Sub-nanoscale electronic systems, devices and processes |
| CN1601902A (en) * | 2004-10-21 | 2005-03-30 | 上海交通大学 | Micromechanical capacitance microwave switch based on Nano dielectric film |
| CN103051244A (en) * | 2012-12-15 | 2013-04-17 | 华中科技大学 | Flexible paper-based power generating device and manufacture method thereof |
| CN109148157A (en) * | 2017-06-16 | 2019-01-04 | 清华大学 | A kind of composite capacitance structure and the preparation method and application thereof |
| CN109979768A (en) * | 2019-03-26 | 2019-07-05 | 北京清正泰科技术有限公司 | RF mems switch based on superslide structure |
| CN110230641A (en) * | 2019-06-03 | 2019-09-13 | 深圳清华大学研究院 | A kind of device of superslide sliding block long range zero abrasion sliding |
| CN212752231U (en) * | 2020-06-28 | 2021-03-19 | 深圳清华大学研究院 | In-plane sliding type parallel capacitor radio frequency switch based on suspension potential |
| CN213043664U (en) * | 2020-06-28 | 2021-04-23 | 深圳清华大学研究院 | In-plane sliding type parallel capacitor radio frequency switch |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20040214543A1 (en) * | 2003-04-28 | 2004-10-28 | Yasuo Osone | Variable capacitor system, microswitch and transmitter-receiver |
| US8354290B2 (en) * | 2010-04-07 | 2013-01-15 | Uchicago Argonne, Llc | Ultrananocrystalline diamond films with optimized dielectric properties for advanced RF MEMS capacitive switches |
| US20160377611A1 (en) * | 2015-06-29 | 2016-12-29 | Polestar Technologies, Inc. | Chemical sensor using molecularly-imprinted single layer graphene |
| US11232241B2 (en) * | 2018-07-16 | 2022-01-25 | Uchicago Argonne, Llc | Systems and methods for designing new materials for superlubricity |
-
2020
- 2020-06-28 CN CN202010596400.9A patent/CN111884644B/en active Active
Patent Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5121089A (en) * | 1990-11-01 | 1992-06-09 | Hughes Aircraft Company | Micro-machined switch and method of fabrication |
| WO1993025003A1 (en) * | 1992-06-01 | 1993-12-09 | Yale University | Sub-nanoscale electronic systems, devices and processes |
| CN1601902A (en) * | 2004-10-21 | 2005-03-30 | 上海交通大学 | Micromechanical capacitance microwave switch based on Nano dielectric film |
| CN103051244A (en) * | 2012-12-15 | 2013-04-17 | 华中科技大学 | Flexible paper-based power generating device and manufacture method thereof |
| CN109148157A (en) * | 2017-06-16 | 2019-01-04 | 清华大学 | A kind of composite capacitance structure and the preparation method and application thereof |
| CN109979768A (en) * | 2019-03-26 | 2019-07-05 | 北京清正泰科技术有限公司 | RF mems switch based on superslide structure |
| CN110230641A (en) * | 2019-06-03 | 2019-09-13 | 深圳清华大学研究院 | A kind of device of superslide sliding block long range zero abrasion sliding |
| CN212752231U (en) * | 2020-06-28 | 2021-03-19 | 深圳清华大学研究院 | In-plane sliding type parallel capacitor radio frequency switch based on suspension potential |
| CN213043664U (en) * | 2020-06-28 | 2021-04-23 | 深圳清华大学研究院 | In-plane sliding type parallel capacitor radio frequency switch |
Non-Patent Citations (2)
| Title |
|---|
| An investigation into graphene exfoliation and potential graphene application in MEMS devices;Fercana等;《Proceedings of SPIE》;20111228;第7928卷;1-7 * |
| Controlled Movements in Superlubric MEMS;郑泉水等;《Journal of Harbin Institute of Technology(New Series)》;第27卷(第3期);45-57 * |
Also Published As
| Publication number | Publication date |
|---|---|
| CN111884644A (en) | 2020-11-03 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN111884644B (en) | Parallel RF MEMS switch based on structure ultra-slip | |
| CN212752231U (en) | In-plane sliding type parallel capacitor radio frequency switch based on suspension potential | |
| US7772745B2 (en) | MEMS device with low operation voltage, large contact pressure force, and large separation force, and portable communication terminal with the MEMS device | |
| US8525185B2 (en) | RF-MEMS capacitive switches with high reliability | |
| KR20030038387A (en) | Electrostatic actuator and electrostatic microrelay and other devices using the same | |
| US6949985B2 (en) | Electrostatically actuated microwave MEMS switch | |
| CN1716492A (en) | Integrated RF MEMS switch | |
| CN213043664U (en) | In-plane sliding type parallel capacitor radio frequency switch | |
| US20090026880A1 (en) | Micromechanical device with piezoelectric and electrostatic actuation and method therefor | |
| CN212587426U (en) | Parallel RF MEMS switch based on structure ultra-smoothness | |
| WO2022247064A1 (en) | High-reliability capacitive rf mems switch | |
| CN213877967U (en) | In-plane sliding type heating radio frequency switch | |
| US20230238191A1 (en) | In-plane sliding parallel capacitive radio frequency switch | |
| CN213877968U (en) | Heating radio frequency switch based on structure is super smooth | |
| CN112151312B (en) | Electrode switch based on structure is super smooth | |
| CN112735918A (en) | Radio frequency switch sliding in surface | |
| CN101276708B (en) | Radio frequency micro electromechanical system switch of electrostatic push-draw type monocrystaline silicon beam | |
| US8115577B2 (en) | Electromechanical switch, filter using the same, and communication apparatus | |
| CN215816325U (en) | Contact type RF MEMS switch and electronic equipment | |
| CN111584310A (en) | Reconfigurable drive voltage RF MEMS switch and manufacturing method thereof | |
| CN213990624U (en) | Radio frequency switch sliding in surface | |
| CN107293449B (en) | Multi-channel rf micro-electromechanical switch based on variable elasticity modulus laminated film beam | |
| CN219286238U (en) | RF MEMS switch and electronic equipment | |
| CN213071018U (en) | In-plane sliding type MEMS switch | |
| WO2024119570A1 (en) | Rf mems switch and electronic device |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |