CN212752231U - In-plane sliding type parallel capacitor radio frequency switch based on suspension potential - Google Patents
In-plane sliding type parallel capacitor radio frequency switch based on suspension potential Download PDFInfo
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- CN212752231U CN212752231U CN202021212226.5U CN202021212226U CN212752231U CN 212752231 U CN212752231 U CN 212752231U CN 202021212226 U CN202021212226 U CN 202021212226U CN 212752231 U CN212752231 U CN 212752231U
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- 239000003990 capacitor Substances 0.000 title claims description 16
- 239000000725 suspension Substances 0.000 title abstract description 4
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Abstract
The utility model provides a slidingtype parallel capacitance radio frequency switch in face based on suspension electric potential. When a driving voltage is applied between the driving parts, the sliding part slides to the position above the driving parts under the action of horizontal acting force, at the moment, a large capacitance is formed between the driving parts and the sliding part, and radio-frequency signals are almost totally reflected and transmitted and cut off; when driving voltage is applied between other driving parts, the sliding part slides to the other driving part under the action of horizontal force, at the moment, the front driving electrode and the sliding part have no direct area in the vertical direction, the capacitance is small, and radio-frequency signals can be transmitted basically without loss.
Description
Technical Field
The utility model belongs to the technical field of radio frequency micro-electro-mechanical system Switch (RF MEMS Switch), concretely relates to in-plane sliding type parallel capacitance radio frequency Switch based on suspension electric potential.
Background
With the development of radar and wireless communication technologies, small-sized, low-power consumption, high-performance, and multifunctional radio frequency devices are becoming the development trend in the radio field, radio frequency devices are developing towards miniaturization and integration, and MEMS switches are coming, and RF MEMS switches have gradually replaced the conventional GaAs FET switches and become the development direction of radio frequency switches (RF switches). Compared with the traditional switch, the RF MEMS switch has the advantages of lower insertion loss, higher isolation, better linearity, lower power consumption, smaller volume and the like, can be easily integrated with an IC circuit, and has wide application prospect. At present, the conventional RF MEMS switch mainly includes an electrostatic driving mechanism, a thermal driving mechanism, an electromagnetic driving mechanism, a piezoelectric driving mechanism, and the like in terms of driving modes.
As a basic electronic component, the RF MEMS electrostatic switch has characteristics of low power consumption, low insertion loss, low crosstalk, high isolation, high linearity, and the like, compared to conventional P-I-N diode switches and FET field effect thyristor switches, and is considered to be one of the most important MEMS devices. Particularly, with the rapid development of a 5G communication system, a radar system, a satellite communication system, and a high performance RF chip system in recent years, the industry has raised higher requirements on power consumption, reliability, isolation, linearity, power handling capability, and the like of an underlying RF switch device, for example, an LTE-a antenna switch having a carrier aggregation function in the 5G system must meet a requirement that IIP3 is 90dBm, while an RF-MEMS RF switch is the only one capable of achieving IIP3>90 dBm. Since conventional solid-state semiconductor switches (P-I-N and FETs) rely on doped carrier conduction and the presence of contact barriers, the switches exhibit poor quality factor (Ron × Coff) and leakage current in the off-state, which severely affects the insertion loss, isolation, linearity of the switch, making such switches unsuitable for switching of high frequency radio frequency signals. The RF MEMS electrostatic switch conducts radio frequency signals by means of mechanical contact, physical isolation exists between signal lines, and therefore the RF MEMS electrostatic switch has low power consumption (nj), low insertion loss, high isolation degree and linearity, energy consumption and cost of a wireless communication system, a radar detection system and a satellite system can be greatly reduced, fidelity of radio frequency signal transmission is improved, and comprehensive performance of the system is remarkably improved. The development and application of the method become key technologies of advanced electronic equipment such as a wireless communication (5G) system, a radar system, a satellite system and the like.
Despite the advantages of RF MEMS electrostatic switches compared to widely used semiconductor radio frequency switches, the mechanical contact switching presents serious reliability problems. The contact or the insulating layer of the RF MEMS electrostatic switch is easy to damage in high-speed collision, so that the on-resistance is increased, a stronger heat effect is caused, the device fails, meanwhile, the damage of the insulating layer can also aggravate the accumulation of surface charges, and when the accumulation of the charges exceeds a critical value, the switch fails through self-electrostatic adsorption; the arc discharge of the contact point at the moment of disconnection can cause the melting of the contact point material, which causes the remarkable increase of the contact resistance and even the direct adhesion of the contact point and the conducting wire; when high-energy power passes through the switch, enough electrostatic force can be coupled between an upper contact and a lower contact or a polar plate, so that the switch is subjected to self-locking pull-in, the processing power of the RF MEMS electrostatic switch is usually below 1W, and the processing power of the semiconductor switch can reach 1-10W. The above is one of the main reasons affecting the reliability and application field of the RF MEMS, and the service life of the RF MEMS electrostatic switch is two orders of magnitude lower than that of the conventional semiconductor switch. In addition, the standard voltage used in the IC integrated circuit system is lower than 5V, and the driving voltage of the RF MEMS electrostatic switch is generally between 10V and 80V, which is one of the reasons why the RF MEMS electrostatic switch is rarely used in the wireless communication system of the mobile phone. In summary, improving power handling capability, reducing driving voltage, and improving reliability are key issues to be solved in further development of RF-MEMS electrostatic switches.
The research of the structure ultra-smooth technology is the phenomenon of no friction and no abrasion sliding between two or the same materials, and the initial research is limited to the ultra-smooth phenomenon of nano-scale, such as the ultra-smooth between multi-arm coaxial carbon nanotubes, the ultra-smooth between a nano probe and a two-dimensional material, and the like. In 2013, zhengquan professor for the first time found the ultra-slip phenomenon between hopg (high Oriented cementitious graphite) sheet materials at micron scale, which marks the transition of ultra-slip from basic research to applicable technical research process. This novel super smooth principle of structure according to, put forward a slidingtype shunt capacitance radio frequency switch in face, can reduce driving voltage and greatly improve the life and the power handling capacity of switch.
Disclosure of Invention
This is novel according to super smooth structure and the low friction between the level heterogeneous basement, the sliding motion in the face of wearless, has proposed a structure super-slippery-based in-plane slidingtype parallel capacitance radio frequency switch. When a driving voltage is applied between the driving parts, the sliding part slides to the position above the driving parts under the action of horizontal acting force, at the moment, a large capacitance is formed between the driving parts and the sliding part, and radio-frequency signals are almost totally reflected and transmitted and cut off; when driving voltage is applied between other driving parts, the sliding part slides to the other driving part under the action of horizontal force, at the moment, the front driving electrode and the sliding part have no direct area in the vertical direction, the capacitance is small, and radio-frequency signals can be transmitted basically without loss.
Particularly, the novel in-plane sliding type parallel capacitor radio frequency switch is realized through the following scheme:
an in-plane sliding type parallel capacitor radio frequency switch, comprising a substrate, a driving part, an insulating layer and a sliding part, wherein the insulating layer is arranged on the surface of the substrate, and the sliding part is arranged on the insulating layer, and the in-plane sliding type parallel capacitor radio frequency switch is characterized in that: the sliding member has a super-slip surface, the insulating layer has an atomically smooth surface, and the super-slip surface is in contact with the atomically smooth surface of the insulating layer; the driving component at least comprises a first driving component, a second driving component and a third driving component, and the sliding component can be driven by the driving component and changes the position of the sliding component relative to the driving component.
Further, the sliding component can be driven to slide in the horizontal direction in the surface, and the switch is realized by adjusting the overlapping and the separation of the driving component and the sliding component in the vertical surface.
Further, the driving part is a driving electrode.
Further, the sliding member is a super-slip sheet, preferably made of graphite, preferably HOPG.
Further, the substrate is selected from an insulating material or a semiconductor material.
Further, the semiconductor material is preferably high group silicon; the insulating material is preferably selected from SiO2, SiC, sapphire, mica, and the like.
Further, the insulating layer is preferably a silicon oxide layer.
Further, the thickness of the insulating layer is in the nanometer level.
Further, the thickness of the insulating layer is preferably 2 to 50 nm.
Further, the driving method in which the driving member drives the sliding member to slide in the horizontal direction in the plane is electrostatic driving.
The novel sliding component is of a sandwich structure which sequentially comprises a driving component, an insulating layer and a sliding component from bottom to top, so that the sliding component can slide in a plane with an extremely low friction force and without abrasion on the surface of the flat insulating layer; when in the off state, the capacitance between the sliding member and the driving member is extremely small, so that the radio frequency signal is hardly lost; when the electronic device is in an off state, the sliding component and the driving component form a larger capacitance due to the insulating layer behind the nanometer level, and radio frequency signals are completely reflected. The on-off of the radio frequency switch is controlled by setting a voltage control time sequence.
Therefore, this novel because frictional force is extremely low and do not have wearing and tearing, can realize lower driving voltage, high life and power throughput, be expected to break through a main obstacle that restricts RF MEMS electrostatic switch life-span, impel its practicality process, promote wireless communication system (5G), high performance phased array radar and satellite communication system etc. relevant electronic equipment research's leap-over formula development.
Drawings
FIG. 1 is a schematic diagram of the on state of the novel parallel capacitor RF switch;
FIG. 2 is a top view of the on state of the novel parallel capacitor RF switch;
FIG. 3 is a schematic diagram of the blocking state of the novel parallel capacitor RF switch;
FIG. 4 is a plan view of the novel parallel capacitor RF switch in a blocking state;
fig. 5 is a cross-sectional view of the substrate with embedded driving electrodes of the novel parallel capacitive rf switch.
Reference numerals: 1, HOPG super sliding sheet, 2, insulating layer, 3, substrate, 4, first driving electrode, 5, second driving electrode, 6, third driving electrode
Detailed Description
Embodiments of the invention are further described below with reference to the following drawings:
the ultra-smooth sheet is a part of an ultra-smooth pair in the prior art, the friction force between two contacted ultra-smooth surfaces of the existing ultra-smooth pair is almost zero when the two contacted ultra-smooth surfaces slide relatively, the friction coefficient is less than one thousandth, and the abrasion is zero.
As shown in fig. 1, the in-plane sliding type parallel capacitance radio frequency switch is composed of a high-resistance silicon substrate 3, a first driving electrode 4, a second driving electrode 5, a third driving electrode 6, an insulating layer 2 and an HOPG ultra-sliding sheet 1. The first driving electrode 4, the second driving electrode 5 and the third driving electrode 6 are embedded in the substrate 3; the surfaces of the substrate 3 and the first driving electrode 4, the second driving electrode 5 and the third driving electrode 6 are flush and keep atomically flat; the insulating layer 2 covers the first driving electrode 4, the second driving electrode 5 and the third driving electrode 6 and is used for insulating the HOPG ultra-slip sheet from the first driving electrode 4, the second driving electrode 5 and the third driving electrode 6, and the thickness of the insulating layer 2 is controlled to be 2nm-50nm, so that gaps among the first driving electrode 4, the second driving electrode 5 and the third driving electrode 6 and the ultra-slip sheet 1 are small enough to ensure that the excitation voltage is small. And placing the HOPG super sliding sheet 1 on an insulating layer to form a super sliding contact pair with an insulating layer 2. The initial position of the HOPG super-slip sheet is over against the first driving electrode 4, and the HOPG super-slip sheet 1 has an atomic-level flat super-slip surface, so that the HOPG super-slip sheet can slide on the surface of the insulating layer 2 with extremely low friction without abrasion, meanwhile, the adhesion failure caused by charge accumulation on the electrode can be avoided, and the ultra-long service life can be realized.
The working process of the in-plane sliding type parallel capacitor radio frequency switch is as follows: fig. 1 and 2 show that the rf switch is in a conducting state, a driving voltage V is applied between the first driving electrode 4 and the second driving electrode 5, at this time, charges are induced at the left and right ends of the HOPG super-slip sheet 1 to generate a floating potential, the HOPG super-slip sheet 1 moves to a position with the minimum potential energy, that is, a position symmetrical with respect to the centers of the first driving electrode 4 and the second driving electrode 5, and at this time, because there is no overlapping area in the vertical direction between the HOPG super-slip sheet 1 and the third driving electrode 6, the capacitance approaches zero, and all rf signals can pass through without reflection loss.
When a driving voltage V is applied between the second driving electrode 5 and the third driving electrode 6, as shown in fig. 3 and 4, the HOPG super-slip sheet 1 is subjected to a leftward acting force and is pulled to the centrosymmetric positions of the second driving electrode 5 and the third driving electrode 6, and because the thickness of the insulating layer 2 is in the nanometer level, a large capacitance is formed between the HOPG super-slip sheet 1 and the third driving electrode 6, so that the radio-frequency signal is completely reflected and transmission is cut off.
The in-plane continuous sliding of the HOPG super-sliding sheet can be realized by adjusting the number, the arrangement, the time sequence control and the size of the HOPG super-sliding sheet.
The above description is only a preferred embodiment of the present invention, and the protection scope of the present invention is not limited to the above embodiment, but equivalent modifications or changes made by those skilled in the art according to the present invention should be included in the protection scope of the claims.
Claims (9)
1. An in-plane sliding type parallel capacitor radio frequency switch, comprising a substrate, a driving part, an insulating layer and a sliding part, wherein the insulating layer is arranged on the surface of the substrate, and the sliding part is arranged on the insulating layer, and the in-plane sliding type parallel capacitor radio frequency switch is characterized in that: the sliding member has a super-slip surface, the insulating layer has an atomically smooth surface, and the super-slip surface is in contact with the atomically smooth surface of the insulating layer; the driving component at least comprises a first driving component, a second driving component and a third driving component, and the sliding component can be driven by the driving component and changes the position of the sliding component relative to the driving component.
2. The in-plane sliding shunt capacitance radio frequency switch of claim 1, wherein: the sliding component can be driven to slide in the horizontal direction in the surface, and the switch is realized by adjusting the overlapping and the separation of the driving component and the sliding component in the vertical surface.
3. The in-plane sliding shunt capacitance radio frequency switch of claim 1, wherein: the drive member is an electrode.
4. The in-plane sliding shunt capacitance radio frequency switch of claim 1, wherein: the sliding member is a super-slide sheet having a super-slide surface.
5. The in-plane sliding shunt capacitance radio frequency switch of claim 4, wherein: the sliding component is a HOPG graphite layer super-sliding sheet.
6. The in-plane sliding parallel capacitor radio frequency switch according to any one of claims 1 to 5, wherein: the substrate is an insulating substrate or a semiconductor substrate.
7. The in-plane sliding parallel capacitor radio frequency switch according to any one of claims 1 to 5, wherein: the thickness of the insulating layer is 1-100 nanometers.
8. The in-plane sliding parallel capacitor radio frequency switch according to any one of claims 1 to 5, wherein: the thickness of the insulating layer is 2-50 nanometers.
9. The in-plane sliding parallel capacitor radio frequency switch according to any one of claims 1 to 5, wherein: the sliding member is driven by electrostatic driving.
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| Application Number | Priority Date | Filing Date | Title |
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| CN202021212226.5U CN212752231U (en) | 2020-06-28 | 2020-06-28 | In-plane sliding type parallel capacitor radio frequency switch based on suspension potential |
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| CN202021212226.5U CN212752231U (en) | 2020-06-28 | 2020-06-28 | In-plane sliding type parallel capacitor radio frequency switch based on suspension potential |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111884644A (en) * | 2020-06-28 | 2020-11-03 | 深圳清华大学研究院 | Parallel RF MEMS switch based on structure ultra-smoothness |
| CN113035650A (en) * | 2021-05-25 | 2021-06-25 | 深圳清华大学研究院 | High reliability capacitive RF MEMS switch |
| WO2023000224A1 (en) * | 2021-07-21 | 2023-01-26 | 深圳清华大学研究院 | Super-smooth skeleton having buried electrodes and production method therefor |
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2020
- 2020-06-28 CN CN202021212226.5U patent/CN212752231U/en active Active
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111884644A (en) * | 2020-06-28 | 2020-11-03 | 深圳清华大学研究院 | Parallel RF MEMS switch based on structure ultra-smoothness |
| CN111884644B (en) * | 2020-06-28 | 2024-04-19 | 深圳清华大学研究院 | Parallel RF MEMS switch based on structure ultra-slip |
| CN113035650A (en) * | 2021-05-25 | 2021-06-25 | 深圳清华大学研究院 | High reliability capacitive RF MEMS switch |
| CN113035650B (en) * | 2021-05-25 | 2021-09-07 | 深圳清华大学研究院 | High reliability capacitive RF MEMS switch |
| WO2022247064A1 (en) * | 2021-05-25 | 2022-12-01 | 深圳清华大学研究院 | High-reliability capacitive rf mems switch |
| WO2023000224A1 (en) * | 2021-07-21 | 2023-01-26 | 深圳清华大学研究院 | Super-smooth skeleton having buried electrodes and production method therefor |
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