CN109950063A - Bistable state RF MEMS touch switch based on lever principle - Google Patents
Bistable state RF MEMS touch switch based on lever principle Download PDFInfo
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- CN109950063A CN109950063A CN201910304252.6A CN201910304252A CN109950063A CN 109950063 A CN109950063 A CN 109950063A CN 201910304252 A CN201910304252 A CN 201910304252A CN 109950063 A CN109950063 A CN 109950063A
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- substrate
- transmission line
- microwave transmission
- lever principle
- touch switch
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- 239000000758 substrate Substances 0.000 claims abstract description 35
- 230000005540 biological transmission Effects 0.000 claims abstract description 33
- 229910052751 metal Inorganic materials 0.000 claims abstract description 30
- 239000002184 metal Substances 0.000 claims abstract description 30
- 230000015572 biosynthetic process Effects 0.000 claims abstract description 5
- 238000009413 insulation Methods 0.000 claims description 4
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical group [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 claims description 3
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 3
- 239000000919 ceramic Substances 0.000 claims description 3
- 239000011521 glass Substances 0.000 claims description 3
- 230000004044 response Effects 0.000 abstract description 6
- 238000002955 isolation Methods 0.000 abstract description 4
- UGQMRVRMYYASKQ-KQYNXXCUSA-N Inosine Chemical compound O[C@@H]1[C@H](O)[C@@H](CO)O[C@H]1N1C2=NC=NC(O)=C2N=C1 UGQMRVRMYYASKQ-KQYNXXCUSA-N 0.000 abstract description 3
- 230000009471 action Effects 0.000 abstract description 3
- 238000000034 method Methods 0.000 description 4
- 238000003780 insertion Methods 0.000 description 3
- 230000037431 insertion Effects 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 238000004891 communication Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical group [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
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- Waveguide Switches, Polarizers, And Phase Shifters (AREA)
Abstract
The present invention relates to a kind of bistable state RF MEMS touch switch based on lever principle, it include substrate, microwave transmission line is distributed on substrate, ground structure is distributed in microwave transmission line two sides, driving electrodes accommodating groove is offered in ground structure, four switch drive electrodes of mirror image distribution two-by-two are provided in driving electrodes accommodating groove, parallel shelf is equipped with cantilever beam on microwave transmission line, wraping plate component is symmetrically arranged at left and right sides of cantilever beam, constitute T-shape metal film bridge, there is the connection of metal anchor point between microwave transmission line and cantilever beam, the position of wraping plate component is corresponding with electrode accommodating groove, fulcrum formation is provided between the bottom and substrate of wraping plate component.Moving seesaw-type structure is used as a result, there is bistable state, and switch reliability is higher.When " ON " turns " OFF " state, due to there is the double action of driving force and cantilever beam selfer power, the response time is faster.In " OFF " state, metal film bridge with contact so that switch isolation Du Genggao.
Description
Technical field
The present invention relates to a kind of contact-making switch more particularly to a kind of bistable state RF MEMS contacts based on lever principle
Switch.
Background technique
Basic structural unit of the RF switch as communication device, there is very important status in a communications system.RF
Mems switch is using a kind of RF switch of MEMS technology production, by the movement of micro mechanical structure, to reach control signal
Through and off purpose, and compare that conventional radio frequency semiconductor switch is low with Insertion Loss, and isolation is high and with long service life excellent
Point.
RF MEMS touch switch is generally monostable configuration at present, i.e. " ON " state is to have the stable state of driving voltage,
" OFF " state is the unstable state of not driving voltage；In addition, frequency range of the tradition RF MEMS touch switch in 30GHz or more is isolated
Degree is universal poor.In view of the above shortcomings, the designer, is actively subject to research and innovation, it is a kind of former based on lever to found
The bistable state RF MEMS touch switch of reason makes it with more the utility value in industry.
Summary of the invention
In order to solve the above technical problems, the object of the present invention is to provide a kind of bistable state RF MEMS based on lever principle
Touch switch.
Bistable state RF MEMS touch switch based on lever principle of the invention, includes substrate, in which: the lining
Microwave transmission line is distributed on bottom, ground structure is distributed in the microwave transmission line two sides, and driving electricity is offered in the ground structure
Pole accommodating groove, four switch drive electrodes of mirror image distribution two-by-two are provided in the driving electrodes accommodating groove, and the microwave passes
Parallel shelf is equipped with cantilever beam on defeated line, and wraping plate component is symmetrically arranged at left and right sides of the cantilever beam, constitutes T-shape metal film
Bridge has the connection of metal anchor point, position and the electrode accommodating groove phase of the wraping plate component between the microwave transmission line and cantilever beam
It is corresponding, fulcrum formation is provided between the bottom and substrate of the wraping plate component.
Further, the above-mentioned bistable state RF MEMS touch switch based on lever principle, wherein described four are opened
It closes in driving electrodes, a pair of of driving electrodes close to microwave transmission line are " ON " state driving electrodes, one far from microwave transmission line
It is " OFF " state driving electrodes to driving electrodes.
Further, the above-mentioned bistable state RF MEMS touch switch based on lever principle, wherein " OFF "
Earthing contact is provided at state driving electrodes.
Further, the above-mentioned bistable state RF MEMS touch switch based on lever principle, wherein the switch
Driving electrodes include the metal substrate positioned at bottom, are superimposed with dielectric layer on the metal substrate.
Further, the above-mentioned bistable state RF MEMS touch switch based on lever principle, wherein the wraping plate
Component is wraping plate with holes, and uniform cavernous structure is distributed with.
Further, the above-mentioned bistable state RF MEMS touch switch based on lever principle, wherein the microwave
Transmission line is co-planar waveguide, or is microstrip line.
Further, the above-mentioned bistable state RF MEMS touch switch based on lever principle, wherein the substrate
For HR-Si substrate；Or it is glass substrate (quartz substrate)；Or it is ceramic substrate；Or it is gallium arsenide substrate.
Still further, the above-mentioned bistable state RF MEMS touch switch based on lever principle, wherein the fulcrum
It is configured to insulation anchor point.
According to the above aspect of the present invention, the present invention has at least the following advantages:
1, using moving seesaw-type structure, there is bistable state, switch reliability is higher.
2, when " ON " turns " OFF " state, due to there is the double action of driving force and cantilever beam selfer power, the response time is more
It is short.
3, in " OFF " state, metal film bridge with contact so that switch isolation Du Genggao.
4, there is no driving electrodes immediately below microwave transmission line, signals leakiness can be reduced, reduce insertion loss.
5, the cavernous structure of wraping plate with holes had not only facilitated the release of metal film bridge, but also reduced the air resistance in switching process
Power, to reduce the switch response time.
The above description is only an overview of the technical scheme of the present invention, in order to better understand the technical means of the present invention,
And can be implemented in accordance with the contents of the specification, the following is a detailed description of the preferred embodiments of the present invention and the accompanying drawings.
Detailed description of the invention
Fig. 1 is the structural schematic diagram of the RF MEMS touch switch of this wraping plate structure.
The meaning of each appended drawing reference is as follows in figure.
1 substrate, 2 microwave transmission line
3 ground structure, 4 cantilever beam
5 wraping plate component, 6 metal anchor point
7 insulation anchor point 8 " ON " state driving electrodes
9 " OFF " state driving electrodes, 10 earthing contact
Specific embodiment
With reference to the accompanying drawings and examples, specific embodiments of the present invention will be described in further detail.Implement below
Example is not intended to limit the scope of the invention for illustrating the present invention.
It include substrate 1 such as the bistable state RF MEMS touch switch based on lever principle of Fig. 1 extremely, it is unusual
Place is: in view of quick, the accurate delivery of signal, microwave transmission line 2 is provided on substrate 1.Meanwhile in microwave transmission
Ground structure 3 is distributed in the two sides of line 2, and electrode accommodating groove is offered in ground structure 3, mirror two-by-two is provided in driving electrodes accommodating groove
As four switch drive electrodes of distribution.Cantilever beam 4 is provided on microwave transmission line 2, the left and right sides of cantilever beam 4 is symmetrically set
It is equipped with wraping plate component 5, constitutes the metal film bridge of T-shape, wraping plate component 5 is enabled to be connected to each other, is formed across microwave transmission line 2 whole
Body.Also, it is provided with metal anchor point 6 between microwave transmission line 2 and cantilever beam 4, metal film bridge can be used as by metal anchor point 6
With the connection of microwave transmission line 2, supporting point as cantilever beam 4 in metal film bridge.The position of wraping plate component 5 and electrode accommodating groove
It is corresponding, the fulcrum formation that insulation anchor point 7 is constituted is provided between the bottom and substrate 1 of wraping plate component 5, to realize that lever is transported
It is dynamic.
From the point of view of an of the invention preferable embodiment, the switch drive electrode of use has multiple, drives in these switches
In moving electrode, a pair of of driving electrodes close to microwave transmission line 2 are " ON " state driving electrodes 8, far from signal wire microwave transmission line 2
A pair of of driving electrodes be " OFF " state driving electrodes 9.Meanwhile it being provided with earthing contact 10 at " OFF " state driving electrodes 9, it can
It is grounded metal film bridge.
Furthermore, switch drive electrode includes the metal substrate positioned at bottom, medium is superimposed on metal substrate
Layer.Meanwhile uniform cavernous structure is distributed with for wraping plate with holes in the wraping plate component 5 that the present invention uses.In this way, facilitating metal film
The release of bridge, and the air drag in switching process is reduced, to reduce the switch response time.Also, in order to adapt to not
Same use demand, microwave transmission line is co-planar waveguide, or microstrip line.
Furthermore, the substrate 1 that the present invention uses is HR-Si substrate.It, can also be with according to the difference of use demand
For glass substrate (quartz substrate).Certainly, it is also ceramic substrate 1 for the application of certain special circumstances, or is served as a contrast for GaAs
Bottom.
Working principle of the present invention is as follows:
Microwave transmission line 2, ground structure 3, wraping plate component 5, cantilever beam 4 can choose the low metal material of resistivity, preferably
For gold.Metal substrate is aluminium, and deielectric-coating can use silicon nitride.Golden material also can be selected in metal anchor point 6, microwave transmission line 2.
When the simultaneously powered up pressure of two " ON " state driving electrodes 8, and when voltage is not added in " OFF " state driving electrodes 9, in driving force
It is pulled to electrode on the inside of wraping plate 07 with holes under effect, this metal film bridge is contacted with the hard contact of microwave transmission line 2, microwave transmission
Line 2 is connected.Simultaneously as lever principle, wraping plate outside with holes is tilted.
When the simultaneously powered up pressure of " OFF " state driving electrodes 9, and when voltage is not added in two " ON " state driving electrodes 8, in driving force
Electrode is pulled on the outside of wraping plate with holes under effect.At this point, being contacted on the outside of wraping plate with holes with earthing contact 10.Metal film bridge ground connection,
It is tilted on the inside of wraping plate with holes simultaneously, metal film bridge and 2 hard contact of microwave transmission line are detached from, and signal disconnects.
It can be seen from the above written description and the attached drawings that after applying the present invention, gathering around and having the following advantages:
1, using moving seesaw-type structure, there is bistable state, switch reliability is higher.
2, when " ON " turns " OFF " state, due to there is the double action of driving force and cantilever beam selfer power, the response time is more
It is short.
3, in " OFF " state, metal film bridge with contact so that switch isolation Du Genggao.
4, there is no driving electrodes immediately below microwave transmission line, signals leakiness can be reduced, reduce insertion loss.
5, the cavernous structure of wraping plate with holes had not only facilitated the release of metal film bridge, but also reduced the air resistance in switching process
Power, to reduce the switch response time.
The above is only a preferred embodiment of the present invention, it is not intended to restrict the invention, it is noted that for this skill
For the those of ordinary skill in art field, without departing from the technical principles of the invention, can also make it is several improvement and
Modification, these improvements and modifications also should be regarded as protection scope of the present invention.
Claims (8)
1. the bistable state RF MEMS touch switch based on lever principle, includes substrate, it is characterised in that: on the substrate
Microwave transmission line is distributed with, ground structure is distributed in the microwave transmission line two sides, and driving electrodes receipts are offered in the ground structure
It receives slot, four switch drive electrodes of mirror image distribution two-by-two, the microwave transmission line is provided in the driving electrodes accommodating groove
Upper parallel shelf is equipped with cantilever beam, and wraping plate component is symmetrically arranged at left and right sides of the cantilever beam, constitutes T-shape metal film bridge, institute
Stating between microwave transmission line and cantilever beam has the connection of metal anchor point, and the position of the wraping plate component is corresponding with electrode accommodating groove,
Fulcrum formation is provided between the bottom and substrate of the wraping plate component.
2. the bistable state RF MEMS touch switch according to claim 1 based on lever principle, it is characterised in that: institute
It states in four switch drive electrodes, a pair of of driving electrodes close to microwave transmission line are " ON " state driving electrodes, are passed far from microwave
A pair of of driving electrodes of defeated line are " OFF " state driving electrodes.
3. the bistable state RF MEMS touch switch according to claim 2 based on lever principle, it is characterised in that: institute
It states and is provided with earthing contact at " OFF " state driving electrodes.
4. the bistable state RF MEMS touch switch according to claim 1 based on lever principle, it is characterised in that: institute
Stating switch drive electrode includes the metal substrate positioned at bottom, is superimposed with dielectric layer on the metal substrate.
5. the bistable state RF MEMS touch switch according to claim 1 based on lever principle, it is characterised in that: institute
Stating wraping plate component is wraping plate with holes, and uniform cavernous structure is distributed with.
6. the bistable state RF MEMS touch switch according to claim 1 based on lever principle, it is characterised in that: institute
Stating microwave transmission line is co-planar waveguide, or is microstrip line.
7. the bistable state RF MEMS touch switch according to claim 1 based on lever principle, it is characterised in that: institute
Stating substrate is HR-Si substrate；Or it is glass substrate；Or it is ceramic substrate；Or it is gallium arsenide substrate.
8. the bistable state RF MEMS touch switch according to claim 1 based on lever principle, it is characterised in that: institute
Fulcrum formation is stated as insulation anchor point.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910304252.6A CN109950063B (en) | 2019-04-16 | 2019-04-16 | Bistable RF MEMS contact switch based on lever principle |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910304252.6A CN109950063B (en) | 2019-04-16 | 2019-04-16 | Bistable RF MEMS contact switch based on lever principle |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN109950063A true CN109950063A (en) | 2019-06-28 |
| CN109950063B CN109950063B (en) | 2024-06-14 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201910304252.6A Active CN109950063B (en) | 2019-04-16 | 2019-04-16 | Bistable RF MEMS contact switch based on lever principle |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115295362A (en) * | 2022-07-05 | 2022-11-04 | 清华大学 | Electrostatic bistable RF MEMS switch and preparation method thereof |
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| US20180260598A1 (en) * | 2017-03-08 | 2018-09-13 | Tower Semiconductor Ltd. | Hybrid MEMs-Floating Gate Device |
| CN209461308U (en) * | 2019-04-16 | 2019-10-01 | 苏州希美微纳系统有限公司 | A kind of RF MEMS touch switch of wraping plate structure |
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2019
- 2019-04-16 CN CN201910304252.6A patent/CN109950063B/en active Active
Patent Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6787438B1 (en) * | 2001-10-16 | 2004-09-07 | Teravieta Technologies, Inc. | Device having one or more contact structures interposed between a pair of electrodes |
| US20060192641A1 (en) * | 2003-08-01 | 2006-08-31 | Commissariat A L'energie Atomique | Bistable micromechanical switch, actuating method and corresponding method for realizing the same |
| CN1845281A (en) * | 2005-04-08 | 2006-10-11 | 三星电子株式会社 | Tri-state RF switch |
| CN103518248A (en) * | 2011-03-28 | 2014-01-15 | 德尔福芒斯公司 | RF MEMS crosspoint switch and crosspoint switch matrix comprising RF MEMS crosspoint switches |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115295362A (en) * | 2022-07-05 | 2022-11-04 | 清华大学 | Electrostatic bistable RF MEMS switch and preparation method thereof |
| CN115295362B (en) * | 2022-07-05 | 2024-05-28 | 清华大学 | Electrostatic bistable RF MEMS switch and preparation method thereof |
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| Publication number | Publication date |
|---|---|
| CN109950063B (en) | 2024-06-14 |
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