CN1845281A - Tri-state RF switch - Google Patents
Tri-state RF switch Download PDFInfo
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- CN1845281A CN1845281A CNA2006100513099A CN200610051309A CN1845281A CN 1845281 A CN1845281 A CN 1845281A CN A2006100513099 A CNA2006100513099 A CN A2006100513099A CN 200610051309 A CN200610051309 A CN 200610051309A CN 1845281 A CN1845281 A CN 1845281A
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- 229910001218 Gallium arsenide Inorganic materials 0.000 description 5
- 239000004411 aluminium Substances 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
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- 238000005452 bending Methods 0.000 description 3
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- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 2
- 239000004642 Polyimide Substances 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000001465 metallisation Methods 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
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- 238000004891 communication Methods 0.000 description 1
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- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
- H01H59/00—Electrostatic relays; Electro-adhesion relays
- H01H59/0009—Electrostatic relays; Electro-adhesion relays making use of micromechanics
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
- H01H59/00—Electrostatic relays; Electro-adhesion relays
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P1/00—Auxiliary devices
- H01P1/10—Auxiliary devices for switching or interrupting
- H01P1/12—Auxiliary devices for switching or interrupting by mechanical chopper
- H01P1/127—Strip line switches
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
- H01H1/00—Contacts
- H01H1/0036—Switches making use of microelectromechanical systems [MEMS]
- H01H2001/0042—Bistable switches, i.e. having two stable positions requiring only actuating energy for switching between them, e.g. with snap membrane or by permanent magnet
Abstract
A tri-state RF MEMS switch includes: a first well formed in a first substrate; a first input signal line and a first output signal line forming a first gap therebetween in the first well; a post bar forming a boundary between the second well and third well in the second substrate; a second input signal line and a second output signal line, and a third input signal line and a third output signal line forming a second gap and a third gap in the second well and the third well, respectively; and a membrane disposed between the first substrate and the second substrate such that the membrane crosses the first, second and third gaps, the membrane including a first conductive pad, a second conductive pad, and a third conductive pad thereon to face the first, second and third gaps, respectively.
Description
Technical field
The present invention relates to three-state and latch radio frequency (RF) switch, particularly, radio frequency Micro Electro Mechanical System (the MEMS-micro electo-mechanical system) switch of a kind of state of locking in three-state.
Background technology
Radio frequency (RF) Micro Electro Mechanical System (MEMS) device can be applied in communication, aspects such as radar and wireless lan (wlan) technology.RF MEMS device comprises little processing (micromachined) electric capacity, inductance, RF switch, phase shifter and tunable oscillator etc.These devices have more performance than the device with the past fabrication techniques.For example, with the FET field effect transistor of a routine or gallium arsenic pin diode switch (GaAs PIN diode switch) relatively, the RF mems switch has as low insertion loss, good characteristics such as Signal Separation, high linearity and low intermodulation.Particularly, the RF mems switch in the firing frequency scope as when being higher than the radio-frequency region of several gigahertzs (GHz), having shown excellent characteristic.
Simultaneously, complementary metal oxide semiconductors (CMOS) (CMOS) manufacturing and encapsulation technology can reduce making RFMEMS device cost.Cmos circuit and RF MEMS device can be easy to be integrated on the one chip.Most of RF mems switches are at low temperatures with surperficial micro fabrication and the processing of body micro fabrication.
The RF switch has one or two output signal corresponding to an input signal.In addition, if the input voltage cancellation, then the RF switch returns their initial condition, and holding wire disconnects.
Under the situation of using traditional RF switch,, need be connected the RF switch of two two output signals, thereby increase the complexity of device in order to realize three output signals corresponding to an input signal.
Therefore, demand to the novel RF switch with the corresponding input signal of three output signals has appearred.
In addition,, also can keep output signal, have the RF switch of blocking mechanism, in order to keep the stable of output signal even also need a kind of input voltage cancellation.
Summary of the invention
The invention provides ternary radio frequency (RF) switch with three output signals.
The present invention simultaneously also provides output signal blocked ternary RF switch.
According to an aspect of the present invention, the ternary RF switch that it provided comprises: first well, and it is formed on first substrate; First input signal cable in first well and first output signal line, they form first gap to each other; Each holding wire in the radio frequency ground connection, itself and first well is isolated; First drive electrode, it is formed in first well; Second substrate, it has second well and Mitsui corresponding to first well on this first substrate; Boundary hurdle (post bar) forms the border between its second well in second substrate and the Mitsui; Second input signal cable and second output signal line, the 3rd input signal cable and the 3rd output signal line, they form second gap and third space respectively in second well and Mitsui; Radio frequency ground connection, it is isolated with each holding wire in second well and Mitsui; Second drive electrode and the 3rd drive electrode, they are respectively formed in second well and the Mitsui; Barrier film, it is arranged between first substrate and second substrate, on first, second and third gap, striding across, and have respectively with its on first gap, second gap first metal pad, second metal pad and three metal pad relative with third space.
Barrier film can be formed with predetermined compression.
Barrier film may be locked in the arbitrary state in three states, and three states comprise: first state, first metal pad touch the holding wire that forms first gap; Second state, second metal pad touch the holding wire that forms second gap; The third state, the 3rd metal pad are touched the holding wire that forms third space.
Barrier film can comprise metal level and at metal level on it and the dielectric layer under it.
First to the 3rd input signal cable is divided by rf signal line and is formed.
When second metal pad of barrier film or the 3rd metal pad contacted with second gap or third space, barrier film formed wave-like by the boundary hurdle.
The height on boundary hurdle is substantially the same with the height of second well.
Description of drawings
With reference to accompanying drawing, more obvious by detailed description thereby the present invention is above-mentioned and its feature will become to one exemplary embodiment, wherein:
Fig. 1 is the diagram schematic diagram of RF construction of switch according to an embodiment of the invention;
Fig. 2 is that the II-II line along Fig. 1 cuts open the cross sectional view of getting, and illustrates first state of RF switch among Fig. 1;
Fig. 3 is the cross sectional view of the demonstration example of diagram Fig. 2 septation;
Fig. 4 is the cross sectional view of second state of RF switch among diagram Fig. 1;
Fig. 5 is the cross sectional view of the third state of RF switch among diagram Fig. 1;
Fig. 6 is that the figure line of the driving voltage of RF switch in the analogous diagram 1 with the result that relation obtained of primary stress passed through in diagram;
Fig. 7 A is the cross sectional view of explaining the method for making ternary RF switch according to a further embodiment of the invention to Fig. 7 H.
Embodiment
Fig. 1 is a perspective schematic view, shows the structure of RF switch according to an embodiment of the invention.Referring to Fig. 1, the input signal cable of RF switch is divided into first to the 3rd input signal cable 112,212 and 312, and forms first to third space G1, G2 and G3 between this input signal cable 112,212 and 312 and three output signal lines 110,210 and 310.First output signal line 110 is positioned at different height with second and third output signal line 210 and 310.
Between first output signal line 110 and other two output signal lines 210 and 310, form across first the barrier film 400 to third space G1, G2 and G3.On this barrier film 400, form respectively corresponding to this first first to the 3rd metal pad 411,412 and 413 to third space G1, G2 and G3, simultaneously metal pad 411,412 and 413 can be between the input signal cable of correspondence and output signal line electric energy transmitting.Barrier film 400 will be described after a while.
Fig. 2 is that the II-II line along Fig. 1 cuts open the cross sectional view of getting, and it illustrates substrate, boundary hurdle, radio frequency ground connection and the drive electrode that can not easily show on Fig. 1.
Referring to Fig. 1 and Fig. 2, on infrabasal plate 100, form first well 102, and form first output signal line 110 in the bottom of first well 102.Radio frequency ground connection 120 is arranged in the both sides of this first output signal line 110.In addition, formed first drive electrode 130 in the outside of radio frequency ground connection 120.
The upper substrate 200 that forms second well 202 and Mitsui 203 is arranged on the infrabasal plate 100.On the border between second well 202 and the Mitsui 203, formed boundary hurdle 350.Second output signal line 210, radio frequency ground connection 220 and second drive electrode 230 are formed on the bottom of second well 202, and the 3rd output signal line 310, radio frequency ground connection 320 and the 3rd drive electrode 330 are formed on the bottom of Mitsui 203 simultaneously.The height on boundary hurdle 350 can be substantially the same with the height of second well 202.
Fig. 3 is a cross sectional view, illustrates an example of Fig. 2 septation 400.Referring to Fig. 3, barrier film 400 can comprise an intermediate metal layer 402 and be respectively formed at the top and following dielectric layer 404 and 406 of intermediate metal layer 402.First to the 3rd metal pad 411,412 and 413 can be respectively formed at corresponding to first position to third space G1, G2 and G3.These metal pads touch corresponding gap, and between the input signal cable of correspondence and output signal line electric energy transmitting.
Though drive electrode in the present embodiment with the holding wire setting at grade, the invention is not restricted to this.These drive electrodes can be arranged under the holding wire.
According to another embodiment of the invention, will describe the operation of RF switch now in detail.
First state
If sacrifice layer is removed (this process will be described later) in the course of processing, barrier film 400 can be crooked downwards owing to the effect of compression, and then first metal pad 411 connects first input signal cable 112 and first output signal lines 110.If a predetermined actuation voltage is applied to first drive electrode 130, then barrier film 400 will be by the electrostatic force between himself and first drive electrode 130 and second or the third state that will describe from behind and bending.Even be applied to the voltage cancellation of first drive electrode 130, this barrier film 400 still maintains first state.This lock function comes from the compression of barrier film 400.
Second state
If predetermined actuation voltage is applied to second drive electrode 230 of the RF switch that is in first state, then barrier film 400 will be owing to the electrostatic force bending between himself and second drive electrode 230, and towards this second drive electrode 230, diagram as shown in Figure 4.In this case, second metal pad 412 connects second input signal cable 212 and second output signal line 210 and produces electric current.Barrier film 400 is owing to boundary hurdle 350 forms wave-like.Even the input voltage cancellation is constant at second state in the RF of second state switch keeping.
The third state
If predetermined actuation voltage is applied to the 3rd drive electrode 330 of the RF switch of first state that is in or second state, because the electrostatic force between the 3rd drive electrode 330 and the barrier film 400, barrier film 400 can be towards the direction bending of the 3rd drive electrode 330, as the diagram of Fig. 5.In this case, the 3rd metal pad 413 connects the 3rd input signal cable 312 and the 3rd output signal line 310 and produces electric current.Because this RF switch in the third state has lock function, even this input voltage cancellation, this RF switch still maintains the third state.
Fig. 6 caption, the driving voltage according to the present invention by emulation RF switch is with the relation of primary stress, the result who is obtained.Referring to Fig. 6, barrier film 400 long 600 μ m, thickness 1 μ m and Young's modulus (Young ' s modulus) be 200GPa, and the gap between drive electrode and the barrier film 400 is 3-4 μ m.Can determine that thus its threshold voltage increases and increases along with initial compression stress.In order to reduce threshold voltage, the length of barrier film 400 should increase, and thickness should reduce, and requires barrier film 400 to have a lower elastic constant and the initial compression of minimizing.
Fig. 7 A has explained the method that another kind of embodiment according to the present invention makes a ternary RF switch to the cross sectional view of 7H.The element application of present embodiment the label identical with previous embodiment, therefore detailed description will be omitted.
The making of understructure
Referring to Fig. 7 A, the about 2 μ m of the degree of depth of first well 102 are formed on the infrabasal plate 100 by etching.Infrabasal plate 100 can be silicon, GaAs (GaAs), quartz or glass etc.
Referring to Fig. 7 B, aluminium or chromium/golden metal deposition is on first well 102, and composition then is so that form first input signal cable 112 (with reference to figure 1) and first output signal line 110, radio frequency ground connection 120 and first drive electrode 130.
Referring to Fig. 7 C, sacrifice layer 105 is spun on the infrabasal plate 100, to fill first well 102, etching and leveling (planarized) then.Sacrifice layer 105 can be photoresist (photoresist), polyimides (polyimide) or Si oxide (silicon oxide).
Referring to Fig. 7 D, metal material is deposited on the sacrifice layer 105, and structure pattern then is so that form first metal pad 411 on sacrifice layer 105.Then, first dielectric layer 404, metal level 402 and second dielectric layer 406 are stacked on sacrifice layer 105 and the infrabasal plate 100 continuously.Then, give the stacked structure composition, so that barrier film 400 forms predetermined width.Subsequently, second metal pad 412 and the 3rd metal pad 413 are formed on the barrier film 400.
First and second dielectric layers 404 and 406 can be formed by Si oxide or silicon nitride, and metal level 402 is formed by aluminium or gold.In addition, first to the 3rd metal pad 411,412 and 413 can be formed by aluminium.
Predetermined compression is applied on the material of deposition barrier film 400.Compression depends on sedimentary condition, for example, and depositing temperature, deposition and source gas.In addition, compression partly depends on the material of barrier film 400.Because pressure is applied on the barrier film 400, so barrier film 400 bends towards on one side.
Referring to Fig. 7 E, if use wet etching or plasma ashing to remove sacrifice layer 105, barrier film 400 bends towards the below and maintains first state.In this case, first metal pad 411 of barrier film 400 first clearance G 1 (referring to Fig. 1) between first input signal cable 112 and first output signal line 110.
Superstructure is made
Referring to Fig. 7 F, second well 202 and Mitsui 203 each dark about 2 μ m, it is formed on the upper substrate 200 by etching.Boundary hurdle 350 is formed in the boundary between second well 202 and the Mitsui 203.Upper substrate 200 can be made by silicon, GaAs (GaAs), quartz or glass etc.
Boundary hurdle 350 can be the island type, and second well 202 and Mitsui 203 can form a well simultaneously.
Referring to Fig. 7 G, aluminium or chromium/golden metal deposition is second and Mitsui 202 and 203, and composition is so that form second and the 3rd input signal cable 212 and 312, the second and the 3rd output signal lines 210 and 310 then, radio frequency ground connection 220 and 320 also has the second and the 3rd drive electrode 230 and 330.
The combination of superstructure and understructure
Referring to Fig. 7 H, infrabasal plate 100 and upper substrate 200 are bonded to each other, thereby make a ternary RF switch.
As mentioned above, in ternary RF switch, provide three output signal lines corresponding input signal cable, and it is simple in structure according to the present invention.In addition, because this three-state RF switch has lock function, even the voltage that is applied cancellation, lock-out state still can be kept.
Although the present invention is shown specifically and describes with reference to one exemplary embodiment, but it will be understood by those skilled in the art that the various variations on the formal and details of carrying out all can not break away from the spirit and scope of the present invention as defined by the appended claims thereon.
Claims (7)
1, a kind of tri-state RF switch comprises:
First well, it is formed on first substrate;
First input signal cable in this first well and first output signal line, they form first gap to each other;
The first radio frequency ground connection, it is isolated with those holding wires in this first well;
First drive electrode, it is formed in this first well;
Second substrate, it has second well and Mitsui corresponding to this first well on this first substrate;
The boundary hurdle forms the border between its this second well in this second substrate and the Mitsui;
Second input signal cable and second output signal line, and the 3rd input signal cable and the 3rd output signal line, they form second gap and third space respectively in this second well and this Mitsui;
The second radio frequency ground connection, it is isolated with those holding wires in this second well and this Mitsui;
Second drive electrode and the 3rd drive electrode, they are respectively formed in this second well and this Mitsui; With
Barrier film, it is arranged between this first substrate and this second substrate, with across this first gap, this second and third space, and have first metal pad, second metal pad and the 3rd metal pad on it, relative with this first gap, this second gap respectively with this third space.
2, tri-state RF switch as claimed in claim 1, wherein this barrier film is formed with predetermined compression.
3, tri-state RF switch as claimed in claim 1, wherein this barrier film is locked in arbitrary state in the three-state, and these three states comprise:
First state, this first metal pad touch those holding wires that form this first gap;
Second state, this second metal pad touch those holding wires that form this second gap;
The third state, the 3rd metal pad are touched those holding wires that form this third space.
4, tri-state RF switch as claimed in claim 1, wherein this barrier film comprise metal level and be formed on this metal level its go up with its under dielectric layer.
5, tri-state RF switch as claimed in claim 1, wherein this first to the 3rd input signal cable is divided by rf signal line and is formed.
6, tri-state RF switch as claimed in claim 1, wherein, when this second metal pad of this barrier film or the 3rd metal pad contacted this second gap or this third space, this barrier film formed wave-like by the boundary hurdle.
7, tri-state RF switch as claimed in claim 1, the height on the hurdle that wherein should demarcate is substantially the same with the height of this second well.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020050029575A KR100612893B1 (en) | 2005-04-08 | 2005-04-08 | Tri-state rf switch |
| KR29575/05 | 2005-04-08 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN1845281A true CN1845281A (en) | 2006-10-11 |
Family
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNA2006100513099A Pending CN1845281A (en) | 2005-04-08 | 2006-01-05 | Tri-state RF switch |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US7477884B2 (en) |
| KR (1) | KR100612893B1 (en) |
| CN (1) | CN1845281A (en) |
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| CN105228946A (en) * | 2013-03-15 | 2016-01-06 | 维斯普瑞公司 | Actuator plate segmentation and control device and method |
| CN107128873A (en) * | 2017-05-09 | 2017-09-05 | 北方工业大学 | MEMS micro-actuator and manufacturing method thereof |
| CN108109882A (en) * | 2018-01-24 | 2018-06-01 | 瑞声科技（南京）有限公司 | A kind of rf micromechanical switch and preparation method thereof |
| CN108508392A (en) * | 2018-06-21 | 2018-09-07 | 中北大学 | A kind of four beam type Electronic Calibration part of T-type switch |
| CN109950063A (en) * | 2019-04-16 | 2019-06-28 | 苏州希美微纳系统有限公司 | Bistable state RF MEMS touch switch based on lever principle |
| CN111261980A (en) * | 2018-11-30 | 2020-06-09 | 华为技术有限公司 | Switch assembly and antenna device |
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| US8451077B2 (en) | 2008-04-22 | 2013-05-28 | International Business Machines Corporation | MEMS switches with reduced switching voltage and methods of manufacture |
| EP2277185A1 (en) * | 2008-05-12 | 2011-01-26 | Nxp B.V. | Mems devices |
| ES2388126T3 (en) * | 2009-03-20 | 2012-10-09 | Delfmems | MEMS type structure with a flexible membrane and improved electric drive means |
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- 2005-04-08 KR KR1020050029575A patent/KR100612893B1/en active IP Right Grant
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2006
- 2006-01-05 CN CNA2006100513099A patent/CN1845281A/en active Pending
- 2006-02-02 US US11/345,237 patent/US7477884B2/en active Active
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN105228946A (en) * | 2013-03-15 | 2016-01-06 | 维斯普瑞公司 | Actuator plate segmentation and control device and method |
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| CN108109882A (en) * | 2018-01-24 | 2018-06-01 | 瑞声科技（南京）有限公司 | A kind of rf micromechanical switch and preparation method thereof |
| CN108109882B (en) * | 2018-01-24 | 2019-08-27 | 瑞声科技（南京）有限公司 | A kind of rf micromechanical switch and preparation method thereof |
| CN108508392A (en) * | 2018-06-21 | 2018-09-07 | 中北大学 | A kind of four beam type Electronic Calibration part of T-type switch |
| CN111261980A (en) * | 2018-11-30 | 2020-06-09 | 华为技术有限公司 | Switch assembly and antenna device |
| CN111261980B (en) * | 2018-11-30 | 2021-06-01 | 华为技术有限公司 | Switch assembly and antenna device |
| CN109950063A (en) * | 2019-04-16 | 2019-06-28 | 苏州希美微纳系统有限公司 | Bistable state RF MEMS touch switch based on lever principle |
Also Published As
| Publication number | Publication date |
|---|---|
| US20060229045A1 (en) | 2006-10-12 |
| US7477884B2 (en) | 2009-01-13 |
| KR100612893B1 (en) | 2006-08-14 |
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