CN213660361U - Dry etching apparatus - Google Patents

Dry etching apparatus Download PDF

Info

Publication number
CN213660361U
CN213660361U CN202023337409.2U CN202023337409U CN213660361U CN 213660361 U CN213660361 U CN 213660361U CN 202023337409 U CN202023337409 U CN 202023337409U CN 213660361 U CN213660361 U CN 213660361U
Authority
CN
China
Prior art keywords
electrode
dry etching
heating
etching apparatus
protective frame
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN202023337409.2U
Other languages
Chinese (zh)
Inventor
彭军
欧凤
权亚平
叶明军
张洋铭
王运均
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Chengdu BOE Display Technology Co Ltd
Original Assignee
Chengdu CEC Panda Display Technology Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Chengdu CEC Panda Display Technology Co Ltd filed Critical Chengdu CEC Panda Display Technology Co Ltd
Priority to CN202023337409.2U priority Critical patent/CN213660361U/en
Application granted granted Critical
Publication of CN213660361U publication Critical patent/CN213660361U/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Landscapes

  • Drying Of Semiconductors (AREA)

Abstract

The present application provides a dry etching apparatus. The application provides a dry etching device is used for etching the base plate, this dry etching device includes first electrode and bearer bar, the bearer bar encloses the circumference edge of establishing at the first electrode, the clearance has between bearer bar and the first electrode, the bearer bar has the inner chamber, the inner chamber is used for holding heating member or heating medium, heating member or heating medium can let in the inner chamber, heat the bearer bar, thereby avoid technology waste gas deposit in the clearance, guarantee that display panel's quality is not influenced.

Description

Dry etching apparatus
Technical Field
The present disclosure relates to the field of semiconductor manufacturing technologies, and particularly, to a dry etching apparatus.
Background
The array substrate of the flat panel display device generally comprises a plurality of stacked film layers, such as an electrical layer, an insulating layer, and a protective layer, and during manufacturing, different film layers need to form corresponding pattern shapes through a plurality of process steps, such as exposure, etching, and the like, wherein the etching process is generally performed by an etching apparatus, and the commonly used etching process includes dry etching, wet etching, and the like.
In the prior art, dry etching is mainly performed by placing a specific gas in an electric field, exciting the gas into plasma consisting of electrons, positive ions, free radicals and the like, thereby performing chemical etching or ion bombardment on the specific film to remove the film and form a corresponding pattern.
However, the waste gas generated in the process of the conventional dry etching equipment is easily adsorbed and deposited in the gap between the protective frame and the electrode to form fine particles, which affects the quality of the display panel.
SUMMERY OF THE UTILITY MODEL
The application provides a dry etching device, which can prevent waste gas in process engineering from adsorbing and depositing between an electrode and a protective frame to form fine particles, thereby ensuring that a display panel has good quality.
The application provides a dry etching device for etching the base plate, this dry etching device includes first electrode and protecting frame, and the protecting frame encloses the circumference edge of establishing at the first electrode, has the clearance between protecting frame and the first electrode, and the first electrode is used for forming the electric field in the top of base plate.
The protective frame is provided with an inner cavity, the inner cavity is used for accommodating a heating body or a heating medium, and the heating body or the heating medium can be led into the inner cavity to heat the protective frame, so that waste gas generated by etching is prevented from depositing in a gap between the first electrode and the protective frame.
When the dry etching device provided by the application etches a substrate, process waste gas is generated and flows into a gap between the first electrode and the protective frame in the etching process, the protective frame on the edge of the outer side of the first electrode is heated by using the heating body or the heating medium, so that the environment in the gap between the first electrode and the protective frame can be maintained at a proper temperature, the waste gas is prevented from being deposited in the gap, the cleanness of the manufacturing environment in the dry etching process is ensured, and the quality of a finally produced display panel is prevented from being influenced.
As an alternative embodiment, the interior cavity of the bezel extends along the length of the bezel. With the arrangement, the heating body can transfer heat to each position in the length direction of the protection frame, so that each position of the circumferential gap between the first electrode and the protection frame can be maintained at a proper temperature.
As another alternative embodiment, the dry etching apparatus provided by the present application may further include a first heating assembly including a heating element disposed in the inner cavity of the protective frame and extending along a length direction of the inner cavity. So set up, heating element can transmit the heat to each position of protecting the frame to maintain the equilibrium of each position temperature on the protecting frame.
As an alternative embodiment, the heating element may abut against the inner wall of the inner cavity of the protective frame, and the heating element may be a resistance wire or a resistance sheet. So set up, can improve the heat transfer efficiency between heating element and the protective frame to on the one hand can improve the intensification efficiency of the gaseous in the clearance between first electrode and the protective frame in the course of the technology, on the other hand can reduce the energy consumption.
As an alternative embodiment, the dry etching apparatus provided by the present application may further include a second heating assembly, and the second heating assembly may include a heating medium generator, and the heating medium generator is communicated with the inner cavity and is configured to introduce a heating medium into the inner cavity, so that the heating medium may flow in the inner cavity of the protective frame. So set up, the higher heating medium of temperature can heat the protecting frame to make the protecting frame position at a preset temperature.
As an alternative embodiment, the heating medium may be water vapor, and the protective frame may be provided with two openings through which water vapor can flow in and out. According to the arrangement, the water vapor can circularly flow in the inner cavity of the protective frame, so that the temperature balance of each position on the protective frame is maintained.
As an optional implementation manner, the second heating assembly may further include a communicating pipe, the communicating pipe is located in the inner cavity, an outer wall of the communicating pipe contacts with a wall of the inner cavity, and the heating medium generator is communicated with the communicating pipe to introduce the heating medium into the communicating pipe.
As an alternative embodiment, the protective frame includes a plurality of protective segments, and the plurality of protective segments are spaced along an outer edge of the first electrode. Therefore, the protective frame can be conveniently mounted and dismounted, and equipment can be conveniently cleaned.
As an alternative embodiment, the plurality of guard segments are located on different sides of the first electrode. In this way, the plurality of protection sections can protect all circumferential positions of the first electrode, so that the first electrode is prevented from being damaged.
As an optional implementation manner, the dry etching apparatus provided in the present application further includes a second electrode, where the second electrode is disposed opposite to the first electrode, and the substrate to be subjected to the dry etching process is located between the first electrode and the second electrode. With such an arrangement, the electric field formed between the first electrode and the second electrode can cause the filled specific gas to react, thereby etching the substrate.
The application provides a dry etching device for etching a substrate, which comprises a first electrode and a protective frame, wherein the protective frame is arranged around the circumferential edge of the first electrode, a gap is arranged between the protective frame and the first electrode, the first electrode is used for forming an electric field above the substrate, the protective frame is provided with an inner cavity, the inner cavity is used for accommodating a heating body or a heating medium, the heating body or the heating medium can be introduced into the inner cavity to heat the protective frame, process waste gas is generated and flows into the gap between the first electrode and the protective frame in the etching process when the dry etching device etches the substrate, the protective frame on the outer edge of the first electrode is heated by using the heating body or the heating medium, the environment in the gap between the first electrode and the protective frame can be maintained at a proper temperature, and waste gas is prevented from depositing in the gap, the cleanness of the manufacturing environment in the dry etching process is ensured, so that the quality of the finally produced display panel is prevented from being influenced.
Drawings
In order to more clearly illustrate the technical solutions of the present application or the prior art, the drawings needed for the description of the embodiments or the prior art will be briefly described below, and it is obvious that the drawings in the following description are some embodiments of the present application, and those skilled in the art can also obtain other drawings according to the drawings without inventive labor.
Fig. 1 is a schematic structural diagram of a dry etching apparatus according to an embodiment of the present disclosure;
fig. 2 is a schematic structural diagram illustrating a connection between a first heating element and a protection frame in a dry etching apparatus according to an embodiment of the present disclosure;
fig. 3 is a schematic cross-sectional view illustrating a protective frame of a dry etching apparatus according to an embodiment of the present disclosure;
fig. 4 is a schematic structural view illustrating a connection between a second heating element and a protection frame in a dry etching apparatus according to an embodiment of the present disclosure;
fig. 5 is a second schematic cross-sectional view of a protective frame in a dry etching apparatus according to an embodiment of the present disclosure.
Description of reference numerals:
10-a first electrode;
101-gap;
20-a protective frame;
201-lumen;
21-a protection section;
211-an opening;
30-a first heating assembly;
31-a heating body;
32-an electric heater;
40-a second heating assembly;
41-heating medium;
42-a heating medium generator;
43-communicating tube.
Detailed Description
In order to make the objects, technical solutions and advantages of the embodiments of the present application clearer, the technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the drawings in the embodiments of the present application, and it is obvious that the described embodiments are some embodiments of the present application, but not all embodiments.
First, it should be understood by those skilled in the art that these embodiments are merely for explaining the technical principles of the present application, and are not intended to limit the scope of the present application. And can be adjusted as needed by those skilled in the art to suit particular applications.
Second, it should be noted that in the description of the present application, the terms of direction or positional relationship indicated by the terms "inside", "outside", and the like are based on the direction or positional relationship shown in the drawings, which are merely for convenience of description, and do not indicate or imply that a device or member must have a specific orientation, be constructed in a specific orientation, and be operated, and thus, should not be construed as limiting the present application.
Furthermore, it should be noted that, in the description of the present application, unless otherwise explicitly specified or limited, the terms "connected" and "connected" should be interpreted broadly, e.g., as being fixed or detachable or integrally connected; can be mechanically or electrically connected; the two components can be directly connected or indirectly connected through an intermediate medium, and the two components can be communicated with each other. The specific meaning of the above terms in the present application can be understood by those skilled in the art as the case may be.
In the description herein, reference to the description of the terms "one embodiment," "some embodiments," "an illustrative embodiment," "an example," "a specific example," or "some examples" or the like means that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the present disclosure. In this specification, the schematic representations of the terms used above do not necessarily refer to the same embodiment or example. Furthermore, the particular features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples.
The array substrate of the flat panel display device generally comprises a plurality of stacked film layers, such as an electrical layer, an insulating layer, and a protective layer, and during manufacturing, different film layers need to form corresponding pattern shapes through a plurality of process steps, such as exposure, etching, and the like, wherein the etching process is generally performed by an etching apparatus, and the commonly used etching process includes dry etching, wet etching, and the like.
In the prior art, dry etching is mainly performed by placing a specific gas in an electric field, exciting the gas into plasma consisting of electrons, positive ions, free radicals and the like, thereby performing chemical etching or ion bombardment on the specific film to remove the film and form a corresponding pattern.
However, the waste gas generated in the process of the conventional dry etching equipment is easily adsorbed and deposited in the gap between the protective frame and the electrode to form fine particles, which affects the quality of the display panel.
In order to solve the above problem, an embodiment of the present application provides a dry etching apparatus, which can prevent the waste gas in the process engineering from adsorbing and depositing between the electrode and the protection frame to form fine particles, thereby ensuring that the display panel has good quality.
Fig. 1 is a schematic structural diagram of a dry etching apparatus provided in an embodiment of the present application, and as shown in fig. 1, the dry etching apparatus provided in this embodiment is used for etching a substrate, and includes a first electrode 10 and a protective frame 20, the protective frame 20 is disposed around a circumferential edge of the first electrode 10, the first electrode 10 is used for forming an electric field above the substrate, a gap 101 is provided between the protective frame 20 and the first electrode 10, and a gas in a dry etching process may enter into the gap 101.
Specifically, the protective frame 20 has an inner cavity 201, the inner cavity 201 can be used for accommodating the heating body 31 or the heating medium 41, and the heating body 31 or the heating medium 41 can pass through the inner cavity 201 to heat the protective frame 20, so as to prevent the waste gas generated by etching from depositing in the gap 101 between the first electrode 10 and the protective frame 20.
It should be noted that, in the dry etching apparatus provided in this embodiment, when the substrate is etched, process waste gas is generated and flows into the gap 101 between the first electrode 10 and the protective frame 20 in the etching process, and since the process waste gas is more easily adsorbed and deposited on the edge of the first electrode 10 or the protective frame 20 at normal temperature or low temperature, the environment in the gap 101 between the first electrode 10 and the protective frame 20 can be maintained at a suitable temperature by heating the protective frame 20 on the outer edge of the first electrode 10 with the heating body 31 or the heating medium 41, so that the waste gas is prevented from being deposited in the gap 101 due to a low temperature, and the manufacturing environment in the dry etching process is ensured to be clean, thereby preventing the quality of the finally produced display panel from being affected.
In addition, if the process exhaust deposits fine particles between the first electrode 10 and the protection frame 20, and the fine particles start to accumulate, in order to avoid the substrate etched by the dry etching apparatus having good quality, the apparatus needs to be shut down to clean and maintain, which reduces the working efficiency of the dry etching apparatus.
Optionally, the substrate etched by the dry etching apparatus of this embodiment may be an array substrate of a liquid crystal display panel, the array substrate may include a wiring layer, a passivation layer, a semiconductor layer, a protective layer, and a pixel electrode layer, which are stacked, and a layer structure is formed by depositing and etching layer by layer, and the dry etching apparatus may etch and form a pattern of any layer structure.
As an alternative embodiment, the inner cavity 201 of the protective frame 20 may extend along the length direction of the protective frame 20, and the heating body 31 or the heating medium 41 may transfer heat to each position in the length direction of the protective frame 20, so that each position of the circumferential gap between the first electrode 10 and the protective frame 20 may be maintained at a suitable temperature.
As an alternative embodiment, the protective frame 20 may include a plurality of protective segments 21, and the plurality of protective segments 21 may be spaced along the outer edge of the first electrode 10, so that the mounting and dismounting of the protective frame 20 may be facilitated, and the cleaning of the device may be facilitated.
Specifically, the protection segment 21 may extend along an edge of the first electrode 10, and the protection segment 21 may be a rod-shaped member, so that when the first electrode 10 needs to be cleaned or adjusted, the protection segments 21 may be sequentially removed. The present embodiment does not limit the specific installation manner of the protection segment 21.
Optionally, the plurality of protection segments 21 are respectively located at different sides of the first electrode 10, the first electrode 10 may be square, the size of the first electrode 10 may be matched with the size of the substrate to be etched, and the plurality of protection segments 21 may be arranged opposite to each side of the square first electrode 10, so that the plurality of protection segments 21 may protect each circumferential position of the first electrode 10, and damage to the first electrode 10 is avoided.
In the present embodiment, the protective frame 20 should be disposed in close contact with the edge of the first electrode 10 as much as possible, but since the protective frame 20 is detachable from the first electrode 10, a gap 101 into which gas can enter is inevitably present between the protective frame 20 and the first electrode 10, and the specific size of the gap 101 is not limited in the present embodiment. In addition, the material of the protective frame 20 may be an insulating material to insulate the first electrode 10 from the outside, and the specific material of the protective frame 20 is not limited in this embodiment, and for example, the material of the protective frame 20 may be Polytetrafluoroethylene (PTFE).
As an alternative embodiment, the inner cavity 201 may have at least one opening 211, the heating body 31 or the heating medium 41 may be introduced into the inner cavity 201 through the opening 211, or may be introduced out of the inner cavity 201 through the opening 211, and the heating body 31 or the heating medium 41 may transfer heat to various positions in the length direction of the protective frame 20, so that various positions of the circumferential gap 101 between the first electrode 10 and the protective frame 20 may be maintained at a suitable temperature.
In particular, in order to enable the heating body 31 in the inner cavity 201 to generate heat by the thermal unit 32, the thermal unit 32 is connected to the opening 211 by a connector, and the opening 211 of the protection section 21 may be provided with a connector protruding from the rod body of the protection section 21, and the connector may be detachably connected to the connector in a clamping manner or a fastening manner.
Optionally, the plurality of protection sections 21 all have inner cavities 201, the connecting piece can be connected with one of the plurality of protection sections 21, and the inner cavities 201 of the plurality of protection sections 21 communicate with each other, or alternatively, a plurality of connecting pieces can be provided, and the plurality of connecting pieces are respectively arranged in one-to-one correspondence with the plurality of protection sections 21, so that the heating unit 32 can respectively heat the heating bodies 31 in the inner cavities 201.
The principle and specific structure for achieving heating will be described in detail below.
As an optional implementation manner, the dry etching apparatus provided in this embodiment may further include a first heating assembly 30, fig. 2 is a schematic structural diagram illustrating that the first heating assembly is connected to the protective frame in the dry etching apparatus provided in this embodiment, and fig. 3 is a schematic cross-sectional diagram illustrating that the protective frame in the dry etching apparatus provided in this embodiment, as shown in fig. 2 and fig. 3, the first heating assembly 30 may include a heating element, the heating element may be disposed in the inner cavity 201 of the protective frame 20 and form a heating body 31, the heating body 31 extends along the length direction of the inner cavity 201, the heating body 31 may be a resistive element, and the heating body 31 may protrude from the opening 211 of the protective frame 20, and an electric heater 32 may be disposed outside the protective frame 20, so that the electric heater 32 may be connected to the heating body 31 through a wire, and thus may generate heat by supplying current to the heating body 31, and the heating body 31 generating heat can transfer heat to each position of the protective frame 20 to maintain the temperature uniformity of each position on the protective frame 20.
Optionally, the heating body 31 is provided with an anode connecting end and a cathode connecting end, the anode connecting end and the cathode connecting end may be disposed corresponding to the opening 211 of the protection frame 20 and extend out of the opening 211, meanwhile, the electric heater 32 may be a power supply, and the anode connecting end and the cathode connecting end of the heating body 31 may be electrically connected to the anode and the cathode of the electric heater 32.
Optionally, the heating body 31 may abut against the inner wall of the inner cavity 201, and thus, the heat transfer efficiency between the heating body 31 and the protection frame 20 may be improved, so that on one hand, the temperature rise efficiency of the gas in the gap 101 between the first electrode 10 and the protection frame 20 may be improved in the process, and on the other hand, the energy consumption may be reduced.
Illustratively, the heating body 31 may be a resistance wire or a resistance sheet, and the resistance wire or the resistance sheet may be fixed in the inner cavity 201 in an integrally formed manner during the manufacturing of the protection frame 20, or may be inserted into the inner cavity 201 in a removable manner after the protection frame 20 is formed.
As another optional implementation manner, the dry etching apparatus provided in this embodiment may further include a second heating assembly 40, fig. 4 is a schematic structural view illustrating that the second heating assembly is connected to the protection frame in the dry etching apparatus provided in this embodiment, and fig. 5 is a schematic cross-sectional view illustrating the protection frame in the dry etching apparatus provided in this embodiment, as shown in fig. 4 and fig. 5, the second heating assembly 40 may include a heating medium generator 42, the heating medium generator 42 is communicated with the inner cavity 201 and is configured to introduce a heating medium 41 into the inner cavity 201, so that the heating medium 41 may flow in the inner cavity 201 of the protection frame 20, and the heating medium 41 may be water vapor, so that water vapor with a higher temperature flows through the inner cavity 201 of the protection frame 20 to heat the protection frame 20, so that the protection frame 20 is maintained at a preset temperature.
Optionally, the second heating assembly 40 may further include a communicating tube 43, the communicating tube 43 is located in the inner cavity 201, an outer wall of the communicating tube 43 contacts with a wall of the inner cavity 201, and the heating medium generator 42 is communicated with the communicating tube 43 to introduce the heating medium 41 into the communicating tube 43.
Alternatively, the opening 211 may include an air inlet and an air outlet, which are respectively communicated with the heating medium generator 42, so that the circulation of the water vapor in the inner cavity 201 of the protection frame 20 can be realized to maintain the temperature balance at various positions on the protection frame 20.
Alternatively, the temperature of the steam generated by the heating medium generator 42 may be controlled within a range of 20 ℃ to 30 ℃ to control the temperature of the inner cavity 201 of the protective frame 20 within the range, and accordingly, the ambient temperature of the gap 101 between the first electrode 10 and the protective frame 20 may be maintained within the range. For example, the temperature of the steam generated by the heating medium generator 32 may be 25 ℃.
It should be noted that, no matter the first heating element 30 or the second heating element 40 is adopted, the cross-sectional shape of the inner cavity 201 of the protective frame 20 may be circular or square, and the cross-sectional shape and the size of the cross-section of the inner cavity 201 of the protective frame 20 are not particularly limited in this embodiment.
As an optional implementation manner, the dry etching apparatus provided in this embodiment further includes a second electrode, the second electrode may be disposed opposite to the first electrode 10, and the substrate to be subjected to the dry etching process is located between the first electrode 10 and the second electrode, so that an electric field formed between the first electrode 10 and the second electrode may cause the filled specific gas to react, thereby etching the substrate.
Specifically, the substrate may be disposed above the first electrode 10, and the second electrode may be disposed above the substrate, and a surface of the substrate to be etched faces the second electrode, that is, in the dry etching apparatus provided in this embodiment, the first electrode 10 is a lower electrode, the second electrode is an upper electrode, and the protective frame 20 may ensure stability of the supporting structure of the first electrode 10.
As an optional implementation manner, the dry etching apparatus provided in this embodiment may further include a temperature control device, where the temperature control device may control and maintain the temperature of the first electrode 10, the first electrode 10 maintains a specific temperature, and the protection frame 20 may also maintain the specific temperature through the first heating element 30 or the second heating element 40, so as to more effectively control the temperature between the first electrode 10 and the protection frame 20, and avoid deposition of process waste gas. In addition, the temperature of the first electrode 10 is set to a gas reaction temperature required for performing the dry etching process, which is a prior art and is not described herein again.
The dry etching apparatus provided by this embodiment is used for etching a substrate, and includes a first electrode and a protection frame, where the protection frame is disposed around a circumferential edge of the first electrode, a gap is formed between the protection frame and the first electrode, the first electrode is used for forming an electric field above the substrate, the protection frame has an inner cavity, the inner cavity is used for accommodating a heating body or a heating medium, the heating body or the heating medium can be introduced into the inner cavity to heat the protection frame, when the dry etching apparatus etches the substrate, process waste gas is generated and flows into the gap between the first electrode and the protection frame during an etching process, and the protection frame on an outer edge of the first electrode is heated by using the heating body or the heating medium, so that an environment in the gap between the first electrode and the protection frame can be maintained at a proper temperature to prevent the waste gas from depositing in the gap, the cleanness of the manufacturing environment in the dry etching process is ensured, so that the quality of the finally produced display panel is prevented from being influenced.
Finally, it should be noted that: the above embodiments are only used for illustrating the technical solutions of the present application, and not for limiting the same; although the present application has been described in detail with reference to the foregoing embodiments, it should be understood by those of ordinary skill in the art that: the technical solutions described in the foregoing embodiments may still be modified, or some or all of the technical features may be equivalently replaced; and the modifications or the substitutions do not make the essence of the corresponding technical solutions depart from the scope of the technical solutions of the embodiments of the present application.

Claims (10)

1. A dry etching device is used for etching a substrate and is characterized by comprising a first electrode and a protective frame, wherein the protective frame is arranged around the circumferential edge of the first electrode, a gap is formed between the protective frame and the first electrode, and the first electrode is used for forming an electric field above the substrate;
the protection frame is provided with an inner cavity, and the inner cavity is used for accommodating a heating body or a heating medium, so that the heating body or the heating medium is introduced into the inner cavity, and the protection frame is heated.
2. The dry etching apparatus according to claim 1, wherein the cavity extends in a longitudinal direction of the protective frame.
3. The dry etching apparatus according to claim 2, further comprising a first heating assembly including a heating element disposed in the inner cavity and forming the heating body, the heating element extending along a length direction of the inner cavity.
4. The dry etching apparatus according to claim 3, wherein the heating element abuts against an inner wall of the cavity.
5. The dry etching apparatus according to claim 3, wherein the heating element is a resistance wire or a resistance sheet.
6. The dry etching apparatus according to claim 2, further comprising a second heating unit including a heating medium generator, the heating medium generator being in communication with the internal cavity and configured to introduce the heating medium into the internal cavity.
7. The dry etching apparatus according to claim 6, wherein the second heating unit further comprises a communicating pipe, the communicating pipe is located in the inner chamber, an outer wall of the communicating pipe is in contact with a wall of the inner chamber, and the heating medium generator is communicated with the communicating pipe to introduce the heating medium into the communicating pipe.
8. The dry etching apparatus according to any one of claims 1 to 7, wherein the protective frame includes a plurality of protective segments, and the plurality of protective segments are provided at intervals along an outer edge of the first electrode.
9. The dry etching apparatus according to claim 8, wherein the plurality of protective segments are respectively located on different sides of the first electrode.
10. The dry etching apparatus according to any one of claims 1 to 7, further comprising a second electrode disposed opposite to the first electrode, the substrate being located between the first electrode and the second electrode.
CN202023337409.2U 2020-12-30 2020-12-30 Dry etching apparatus Active CN213660361U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202023337409.2U CN213660361U (en) 2020-12-30 2020-12-30 Dry etching apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN202023337409.2U CN213660361U (en) 2020-12-30 2020-12-30 Dry etching apparatus

Publications (1)

Publication Number Publication Date
CN213660361U true CN213660361U (en) 2021-07-09

Family

ID=76690744

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202023337409.2U Active CN213660361U (en) 2020-12-30 2020-12-30 Dry etching apparatus

Country Status (1)

Country Link
CN (1) CN213660361U (en)

Similar Documents

Publication Publication Date Title
TWI708524B (en) Showerhead having a detachable high resistivity gas distribution plate
TWI688668B (en) Showerhead having a detachable gas distribution plate
TWI454592B (en) Apparatus for an optimized plasma chamber grounded electrode assembly
TW202137281A (en) High power electrostatic chuck with aperture-reducing plug in a gas hole, and method and chamber relating thereto
CN102148125B (en) Plasma processing apparatus
CN115354298A (en) PECVD equipment graphite boat cleaning system
JP3970815B2 (en) Semiconductor device manufacturing equipment
JP2010225296A (en) Inductively coupled antenna unit and plasma processing device
CN213660361U (en) Dry etching apparatus
JP2022134112A (en) Substrate processing apparatus and substrate processing method
WO2008038901A1 (en) Plasma generator
KR20030085195A (en) Chemical Vapor Deposition Apparatus
KR20110006932A (en) Apparatus for fixing substrate
TWI469695B (en) Plasma processing device
KR200420693Y1 (en) Radio frequency grounding apparatus
WO2006095575A1 (en) Plasma treatment apparatus and semiconductor thin film manufacturing method using same
KR102081801B1 (en) Sheath heater sealing device of heat treatment oven chamber
KR101986834B1 (en) Dry Texturing Apparatus for Alkali SDR Surface of Crystalloid Solar Cell using Atmospheric Plasma
WO2011132454A1 (en) Plasma processing device, plasma processing method, and method for producing semiconductor element
CN212517132U (en) Plasma etching apparatus and plasma etching system
CN220092384U (en) Dry cleaning device for graphite boat
TWI841385B (en) Semiconductor process equipment
US20230377855A1 (en) Lower deposition chamber ccp electrode cleaning solution
KR20090095787A (en) Apparatus for treating surface of a substrate with atmospheric pressure plasma
KR102518875B1 (en) Substrate processing apparatus

Legal Events

Date Code Title Description
GR01 Patent grant
GR01 Patent grant
CP03 Change of name, title or address

Address after: No. 1778, Qinglan Road, Huangjia Street, Shuangliu District, Chengdu, Sichuan 610200

Patentee after: Chengdu BOE Display Technology Co.,Ltd.

Country or region after: China

Address before: No. 1778, Qinglan Road, Gongxing street, Shuangliu District, Chengdu, Sichuan 610200

Patentee before: CHENGDU ZHONGDIAN PANDA DISPLAY TECHNOLOGY Co.,Ltd.

Country or region before: China

CP03 Change of name, title or address