CN213638728U

CN213638728U - Transistor with good heat dissipation effect

Info

Publication number: CN213638728U
Application number: CN202023010156.8U
Authority: CN
Inventors: 夏远志
Original assignee: Shenzhen Haiben Electronic Technology Co ltd
Current assignee: Shenzhen Haiben Electronic Technology Co ltd
Priority date: 2020-12-14
Filing date: 2020-12-14
Publication date: 2021-07-06
Anticipated expiration: 2030-12-14

Abstract

The utility model discloses a transistor that radiating effect is good, including the transistor body, it has the pin that is equidistance structural distribution to peg graft on the outer wall of transistor body one side, and the pin is electric connection with the transistor body, the protection component has been cup jointed to the pin outside, the radiating groove that is equidistance structural distribution has all been seted up on the outer wall of transistor body both sides, the arrangement groove has all been seted up on the outer wall of transistor body top and the bottom outer wall, and it has the silica gel pad to bond on the inner wall of arrangement groove one side, it has the heat-conducting plate to bond on the outer wall of silica gel pad one side, and integrated into one piece has the fin board that is equidistance structural. The utility model discloses radiating groove, heat-conducting plate, fin board, the heat extraction board that sets up on the transistor body can accelerate the radiating efficiency of transistor body to prevent that the transistor from being heated and damaging, the protection subassembly can protect the pin moreover, avoids the pin because of receiving great external force and takes place to buckle then cracked phenomenon takes place, can accelerate the heat dissipation of pin department simultaneously.

Description

Transistor with good heat dissipation effect

Technical Field

The utility model relates to a transistor technical field especially relates to a transistor that radiating effect is good.

Background

A transistor is a solid semiconductor device having a plurality of functions such as detection, rectification, amplification, switching, voltage stabilization, signal modulation, and the like, and is a variable current switch capable of controlling an output current based on an input voltage.

At present, the transistor produces very big heat in the course of the work, and because itself is bulky limited for the radiating effect of transistor is relatively poor, and current transistor has set up longer pin for the various application requirements of adaptation simultaneously, makes when installing the transistor on the circuit board and receives external force, and the pin breaks that bends easily takes place, consequently, need to design a transistor that the radiating effect is good to solve above-mentioned problem urgently.

SUMMERY OF THE UTILITY MODEL

The utility model aims at solving the problem that the prior transistor heat dissipation effect existing in the prior art is poor and the pin is easy to break when receiving external force, and providing a transistor with good heat dissipation effect.

In order to achieve the above purpose, the utility model adopts the following technical scheme:

the utility model relates to a transistor that radiating effect is good, including the transistor body, it has the pin that is equidistance structural distribution to peg graft on the outer wall of transistor body one side, just the pin is electric connection with the transistor body, the protection subassembly has been cup jointed to the pin outside, the radiating groove that is equidistance structural distribution has all been seted up on the outer wall of transistor body both sides, all seted up the resettlement groove on the outer wall of transistor body top and on the outer wall of bottom, just it has the silica gel pad to bond on the inner wall of resettlement groove one side, it has the heat-conducting plate to bond on the outer wall of silica gel pad one side, just integrated into one piece has the fin board that is equidistance structural distribution on the outer wall of heat-conducting plate top.

In one embodiment, the heat-discharging plate is welded on the outer wall of one side of the transistor body, and a through hole is formed in one side of the outer wall of the top of the heat-discharging plate.

In one embodiment, lugs are integrally formed on the outer walls of two sides of the transistor body, and a spring is mounted on the outer wall of one side of each lug through a bolt.

In one embodiment, the spring is provided with a mounting plate at one end far away from the ear plate through a bolt, and two mounting holes are formed in the outer wall of one side of the mounting plate.

In one embodiment, the protection assembly comprises a heat conduction sleeve, and air holes distributed in an annular structure at equal intervals are formed in the inner wall of the side face of the heat conduction sleeve.

In one embodiment, the heat-conducting sleeve is externally bonded with a heat-dissipating sleeve, and the outer wall of the side surface of the heat-dissipating sleeve is provided with first grooves which are distributed in an annular structure at equal intervals.

The utility model relates to a transistor that radiating effect is good's beneficial effect does:

1. through radiating groove, heat-conducting plate, fin board, the heat extraction board that sets up, at this transistor during operation, radiating groove, heat-conducting plate, fin board, the heat extraction board that set up on the transistor body can accelerate the radiating efficiency of transistor body to prevent that the transistor from being heated the damage.

2. Through the protective assembly who sets up, protective assembly can protect the pin, avoids the pin to take place to buckle because of receiving great external force and then cracked phenomenon takes place, and protective assembly can accelerate the heat dissipation of pin department simultaneously.

3. Through the spring that sets up, when the circuit board received the striking, the shock-absorbing performance of transistor can be improved to the buffer performance of spring to avoid the transistor to appear the gap receiving great vibrations pin and circuit board junction, can avoid vibrations to influence the use of transistor simultaneously.

Drawings

In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings that are required to be used in the embodiments will be briefly described below, it should be understood that the following drawings only illustrate some embodiments of the present invention, and therefore should not be considered as limiting the scope, and for those skilled in the art, other related drawings can be obtained according to the drawings without inventive efforts.

Fig. 1 is a front view of a transistor with a good heat dissipation effect according to the present invention;

fig. 2 is a schematic structural diagram of a transistor body of a transistor with a good heat dissipation effect according to the present invention;

fig. 3 is a sectional view of a transistor body structure of a transistor with a good heat dissipation effect according to the present invention;

fig. 4 is a schematic structural diagram of a protection component of a transistor with a good heat dissipation effect according to the present invention.

In the figure: the heat dissipation structure comprises a transistor body 1, an ear plate 2, a spring 3, a pin 4, a mounting plate 5, a mounting hole 6, a protective component 7, a heat conduction sleeve 8, a heat dissipation sleeve 9, a first groove 10, a placement groove 11, a silica gel pad 12, a heat conduction plate 13, a fin plate 14, a second groove 15, a heat dissipation groove 16, a heat exhaust plate 17, a through hole 18 and an air hole 19.

Detailed Description

In order to make the objects, technical solutions and advantages of the embodiments of the present invention clearer, the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention, and it is obvious that the described embodiments are some, but not all, embodiments of the present invention. The components of the embodiments of the present invention, as generally described and illustrated in the figures herein, may be arranged and designed in a wide variety of different configurations.

Thus, the following detailed description of the embodiments of the present invention, presented in the accompanying drawings, is not intended to limit the scope of the invention, as claimed, but is merely representative of selected embodiments of the invention. Based on the embodiments in the present invention, all other embodiments obtained by a person skilled in the art without creative work belong to the protection scope of the present invention.

It should be noted that: like reference numbers and letters refer to like items in the following figures, and thus, once an item is defined in one figure, it need not be further defined and explained in subsequent figures.

In the description of the present invention, it should be noted that the terms "upper" and "lower" are used for indicating the position or positional relationship based on the position or positional relationship shown in the drawings, or the position or positional relationship which is usually placed when the product of the present invention is used, and are only for convenience of describing the present invention and simplifying the description, but not for indicating or implying that the indicated device or element must have a specific position, be constructed and operated in a specific position, and thus should not be construed as limiting the present invention.

Further, in the present disclosure, unless otherwise expressly stated or limited, the first feature may comprise both the first and second features directly contacting each other, and also may comprise the first and second features not being directly contacting each other but being in contact with each other by means of further features between them. Also, the first feature being above, on or above the second feature includes the first feature being directly above and obliquely above the second feature, or merely means that the first feature is at a higher level than the second feature. A first feature that underlies, and underlies a second feature includes a first feature that is directly under and obliquely under a second feature, or simply means that the first feature is at a lesser level than the second feature.

Furthermore, the terms "horizontal", "vertical" and the like do not imply that the components are required to be absolutely horizontal or pendant, but rather may be slightly inclined. For example, "horizontal" merely means that the direction is more horizontal than "vertical" and does not mean that the structure must be perfectly horizontal, but may be slightly inclined.

In the description of the present invention, it should also be noted that, unless explicitly stated or limited otherwise, the terms "disposed," "connected," and "connected" are to be construed broadly, e.g., as meaning fixedly connected, detachably connected, or integrally connected; can be mechanically or electrically connected; they may be connected directly or indirectly through intervening media, or they may be interconnected between two elements. The specific meaning of the above terms in the present invention can be understood in specific cases to those skilled in the art.

Referring to fig. 1 to 4, a transistor with good heat dissipation effect includes a transistor body 1, pins 4 are inserted into an outer wall of one side of the transistor body 1 and are distributed equidistantly, the pins 4 are electrically connected to the transistor body 1, a protection component 7 is sleeved outside the pins 4, the protection component 7 is convenient for protecting the pins 4 and preventing the pins 4 from being damaged, heat dissipation grooves 16 are formed on outer walls of two sides of the transistor body 1 and are distributed equidistantly, the heat dissipation grooves 16 are convenient for heat dissipation of the transistor body, mounting grooves 11 are formed on an outer wall of a top and an outer wall of a bottom of the transistor body 1, a silicone pad 12 is adhered on an inner wall of one side of the mounting grooves 11, a heat conduction plate 13 is convenient for mounting the heat conduction plate 13 inside the mounting grooves 11, the heat conduction plate 13 is adhered on an outer wall of one side of the silicone pad 12, the heat conduction plate 13 is used for conducting heat to a fin plate 14, and fin plates 14 are integrally formed on an outer wall of, the fin plate 14 is convenient for quickening the heat dissipation of the transistor, the two outer walls of the two sides of the fin plate 14 are respectively provided with a second groove 15, and the second grooves 15 are convenient for enlarging the contact area of the fin plate 14 and the air.

Furthermore, a heat discharging plate 17 is welded on the outer wall of one side of the transistor body 1, the heat discharging plate 17 is convenient for accelerating heat dissipation of the transistor, and a through hole 18 is formed in one side of the outer wall of the top of the heat discharging plate 17.

Further, the outer wall of the two sides of the transistor body 1 is provided with the lug plates 2 in a whole, the outer wall of one side of each lug plate 2 is provided with the spring 3 through the bolt, and the spring 3 is used for reducing the vibration of the transistor when the circuit board is impacted.

Further, the mounting panel 5 is installed through the bolt to the one end that the otic placode 2 was kept away from to spring 3, and mounting panel 5 just fixes the transistor on the circuit board with the bolt to avoid the transistor to receive external force to take place to empty, and seted up two mounting holes 6 on the outer wall of mounting panel 5 one side, mounting hole 6 is convenient for the bolt and passes mounting panel 5.

Further, the protection component 7 comprises a heat conduction sleeve 8, the heat conduction sleeve 8 is used for transferring heat on the pin 4 to the heat dissipation sleeve 9, air holes 19 distributed in an annular structure at equal intervals are formed in the inner wall of the side face of the heat conduction sleeve 8, and the air holes 19 are convenient for heat dissipation on the pin 4.

Furthermore, the heat dissipation sleeve 9 is bonded outside the heat conduction sleeve 8, the heat dissipation sleeve 9 is used for accelerating the heat dissipation returned by the heat conduction sleeve 8, grooves 10 distributed in an annular structure are formed in the outer wall of the side face of the heat dissipation sleeve 9 at equal intervals, and the grooves 10 are used for increasing the contact area between the heat dissipation sleeve 9 and the air, so that the heat dissipation of the pins is accelerated.

The working principle is as follows: when the transistor is used, a worker can insert the pins 4 on the assembled transistor body 1 on a circuit board, then the pins 4 are fixed on the circuit board through welding, then the mounting plate 5 is fixed on the circuit board through the mounting holes 6 formed by penetrating the mounting plate 5 through bolts by the worker, so that the transistor is mounted on the circuit board, then when the transistor works, the silicone pad 12 in the mounting groove 11 can transmit heat to the heat conducting plate 13, the heat conducting plate 13 can quickly radiate the heat generated by the transistor under the action of the fin plate 14, meanwhile, the heat radiating plate 17 and the heat radiating groove 16 on the transistor body 1 can also accelerate the heat radiation of the transistor, so that the transistor is protected from being burnt out due to excessive heating, at the moment, the heat conducting sleeve 8 can transmit the heat on the pins 4 to the heat radiating sleeve 9 for quickly radiating, so that the heat radiation of the pins 4 is accelerated, and meanwhile, the protection component 7 consisting of the heat conducting sleeve 8 and the heat radiating sleeve 9, avoid pin 4 by the rupture when the pin is strikeed to external force, when the circuit board received the striking, spring 3 can reduce the vibrations that receive of transistor simultaneously to avoid the transistor to appear the gap receiving great vibrations pin 4 and circuit board junction.

The above, only be the concrete implementation of the preferred embodiment of the present invention, but the protection scope of the present invention is not limited thereto, and any person skilled in the art is in the technical scope of the present invention, according to the technical solution of the present invention and the utility model, the concept of which is equivalent to replace or change, should be covered within the protection scope of the present invention.

Claims

1. The utility model provides a transistor that radiating effect is good, includes the transistor body, its characterized in that, it has the pin that is equidistant structure and distributes to peg graft on the outer wall of transistor body one side, just the pin is electric connection with the transistor body, the protection subassembly has been cup jointed to the pin outside, the radiating groove that is equidistant structure and distributes has all been seted up on the outer wall of transistor body both sides, all seted up the resettlement groove on the outer wall of transistor body top and on the outer wall of bottom, just it has the silica gel pad to bond on the inner wall of resettlement groove one side, it has the heat-conducting plate to bond on the outer wall of silica gel pad one side, just integrated into one piece has the fin board that is equidistant structure and distributes on the outer wall of heat-conducting plate top.

2. The transistor with good heat dissipation effect as claimed in claim 1, wherein a heat dissipation plate is welded on an outer wall of one side of the transistor body, and a through hole is formed in one side of an outer wall of the top of the heat dissipation plate.

3. The transistor with good heat dissipation effect of claim 1, wherein the outer walls of two sides of the transistor body are integrally formed with ear plates, and the outer wall of one side of each ear plate is provided with a spring through a bolt.

4. The transistor with good heat dissipation effect as claimed in claim 3, wherein a mounting plate is mounted on one end of the spring away from the ear plate through a bolt, and two mounting holes are formed in an outer wall of one side of the mounting plate.

5. The transistor with the good heat dissipation effect as claimed in claim 1, wherein the protection assembly comprises a heat conduction sleeve, and the inner wall of the side surface of the heat conduction sleeve is provided with air holes distributed in an annular structure at equal intervals.

6. The transistor with good heat dissipation effect according to claim 5, wherein a heat dissipation sleeve is bonded outside the heat conduction sleeve, and grooves I are formed in the outer wall of the side face of the heat dissipation sleeve and distributed in an annular structure at equal intervals.