CN213635962U - Ordinary TVS paster diode packaging structure - Google Patents
Ordinary TVS paster diode packaging structure Download PDFInfo
- Publication number
- CN213635962U CN213635962U CN202022093202.9U CN202022093202U CN213635962U CN 213635962 U CN213635962 U CN 213635962U CN 202022093202 U CN202022093202 U CN 202022093202U CN 213635962 U CN213635962 U CN 213635962U
- Authority
- CN
- China
- Prior art keywords
- chip
- heat dissipation
- wire jumper
- copper sheet
- pin
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
Landscapes
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Abstract
The utility model discloses a common TVS paster diode packaging structure, including chip, 1 pair of wire jumper, 1 pair of pin and cladding chip, wire jumper and the glue sealing layer of pin, chip and wire jumper all set up in the glue sealing layer, the wire jumper welding is on chip upper and lower surface, and the pin is located the one end in the glue sealing layer and is connected with the wire jumper, and the other end extends the glue sealing layer outside, the glue sealing layer is located top wire jumper upper surface and is provided with the heat dissipation copper sheet that sets up with wire jumper and chip welding department corresponding; the utility model discloses a chip, wire jumper and heat dissipation copper sheet have set gradually, and the heat dissipation copper sheet setting is kept away from the back of wire jumper and chip welding department at the wire jumper, has increased the thermal capacity of chip welding position department, promotes transient state heat dispersion, reduces paster diode manufacturing cost, improves paster diode's reliability.
Description
Technical Field
The utility model relates to a technical field of the built-up member of constituteing by a plurality of single semiconductors or other solid-state devices, especially a ordinary TVS paster diode packaging structure.
Background
At present, domestic diode chips are mature after years of technology accumulation, a copper frame of a common TVS surface mount diode is generally formed by punching a copper strip, the thickness is uniform, the thickness of a welding part of an internal chip and the thickness of an external pin are uniform, and heat generated by the TVS chip after impact is not easy to be dissipated to the pin.
Disclosure of Invention
In view of this, the present invention provides a common TVS chip diode package structure; the utility model relates to a common TVS paster diode packaging structure is through having set gradually chip, wire jumper and heat dissipation copper sheet, and the heat dissipation copper sheet setting is kept away from the back of wire jumper and chip welding department at the wire jumper, has increased the thermal capacity of chip weld position department, promotes transient state heat dispersion, reduces paster diode manufacturing cost, improves paster diode's reliability.
In order to achieve the purpose, the utility model relates to a ordinary TVS paster diode packaging structure, including chip, 1 to the wire jumper, 1 to the glue sealing layer of pin and cladding chip, wire jumper and pin, chip and wire jumper all set up in sealing the glue layer, the wire jumper welding is on the surface about the chip, and the pin is located seals intraformational one end of glue and jumper connection, and the other end extends the glue sealing layer outside, it is provided with the heat dissipation copper sheet that corresponds the setting with wire jumper and chip welding department to seal intraformational top wire jumper upper surface.
Furthermore, a heat dissipation copper sheet I which is arranged corresponding to the welding position of the jumper wire and the chip is arranged on the lower surface of the jumper wire at the bottom in the adhesive sealing layer.
Furthermore, the middle part all around of the heat dissipation copper sheet is provided with a concave hole convenient for plastic packaging and glue injection.
Furthermore, the four corners of the heat dissipation copper sheet and the heat dissipation copper sheet I are provided with chamfers or fillets convenient for plastic packaging and glue injection.
Further, the pin sets up to U template structure, and U template one side sets up in gluing the glue layer, the both sides of gluing the glue layer bottom are provided with the holding tank that holds U template opposite side.
Further, the jumper wire includes the current conducting plate and connects in current conducting plate one end and be used for the connecting portion of being connected with the pin, and the current conducting plate bottom is provided with the welding part.
Further, connecting portion and current conducting plate parallel arrangement, be provided with the slant connecting strip between connecting portion and the current conducting plate.
Furthermore, the heat dissipation copper sheet I is connected with the pin I and the pin is connected with the jumper wire in a welding mode.
The invention has the beneficial effects that:
the utility model discloses ordinary TVS paster diode packaging structure is through having set gradually chip, wire jumper and heat dissipation copper sheet, and the heat dissipation copper sheet setting is kept away from the back of wire jumper and chip welding department at the wire jumper, has increased the thermal capacity of chip welding position department, promotes transient state heat dispersion, reduces paster diode manufacturing cost, improves paster diode's reliability.
Drawings
In order to make the purpose, technical scheme and beneficial effect of the utility model clearer, the utility model provides a following figure explains:
fig. 1 is a schematic structural view of a common TVS chip diode package structure of the present invention;
fig. 2 is a top view of the conventional TVS chip diode package structure of the present invention;
fig. 3 is a schematic structural diagram of a jumper wire in the general TVS chip diode package structure of the present invention;
fig. 4 is a top view of a jumper wire in the general TVS chip diode package structure of the present invention;
fig. 5 is a top view of a heat dissipation copper sheet in the conventional TVS chip diode package structure of the present invention;
fig. 6 is a top view of another embodiment of the heat dissipation copper sheet in the general TVS chip diode package structure of the present invention.
Reference numerals: 1-chip; 2-jumper wire; 3-a pin; 4-a heat-dissipating copper sheet; 5-sealing adhesive layer; 6-concave holes; 7-a weld; 8-connecting part.
Detailed Description
The present invention will be further explained with reference to the drawings and examples.
As shown in fig. 1-6 the utility model discloses ordinary TVS paster diode packaging structure's structural schematic diagram, the utility model relates to an ordinary TVS paster diode packaging structure, including chip 1, 1 to wire jumper 2, 1 to pin 3 and cladding chip 1, wire jumper 2 and pin 3's adhesive tape 5, chip 1 and wire jumper 2 all set up in adhesive tape 5, wire jumper 2 welds on chip 1 upper and lower surface, and pin 3 is located the one end and is connected with wire jumper 2 in adhesive tape 5, and the other end extends the adhesive tape 5 outside, it is provided with the heat dissipation copper sheet 4 that corresponds the setting with wire jumper 2 and chip 1 welding department to be located top wire jumper 2 upper surface in adhesive tape 5.
This embodiment is through having set gradually chip 1, wire jumper 2 and heat dissipation copper sheet 4, and heat dissipation copper sheet 4 sets up the back of keeping away from wire jumper 2 and chip 1 welding department at wire jumper 2, has increased the thermal capacity of chip 1 welding position department, promotes transient state heat dispersion, reduces paster diode manufacturing cost, improves paster diode's reliability.
In a preferred embodiment, a heat dissipation copper sheet I corresponding to the welding position of the jumper wire 2 and the chip 1 is arranged on the lower surface of the bottom jumper wire 2 in the adhesive layer 5.
In a preferred embodiment, a concave hole 6 convenient for plastic packaging and glue injection is formed in the middle of the periphery of the heat dissipation copper sheet 4.
In a preferred embodiment, the four corners of the heat dissipation copper sheet 4 and the heat dissipation copper sheet I are provided with chamfers or fillets convenient for plastic packaging and glue injection.
The preferred embodiment, pin 3 sets up to U template structure, and U template one side sets up in adhesive sealing layer 5, the both sides of adhesive sealing layer 5 bottom are provided with the holding tank that holds U template opposite side, and this structure is favorable to pin 3 to set up in 5 bottom both sides of adhesive sealing layer, makes things convenient for the diode to install and use.
Preferred embodiment, wire jumper 2 includes the current conducting plate and connects at current conducting plate one end and be used for the connecting portion 8 of being connected with the pin, and the current conducting plate bottom is provided with weld part 7, connecting portion 8 and current conducting plate parallel arrangement, be provided with the slant connecting strip between connecting portion 8 and the current conducting plate, this structure is favorable to improving wire jumper 2 in encapsulated layer 5 and the joint strength between the chip, avoids taking off the line under the exogenic action.
In a preferred embodiment, the heat dissipation copper sheet I and the pin I are connected through welding, and the pin and the jumper wire are connected through welding.
Finally, it is noted that the above embodiments are only used for illustrating the technical solutions of the present invention and not for limiting, and although the present invention has been described in detail with reference to the preferred embodiments, it should be understood by those skilled in the art that the technical solutions of the present invention can be modified or replaced by equivalents without departing from the spirit and scope of the technical solutions, which should be covered by the protection scope of the present invention.
Claims (8)
1. The utility model provides a ordinary TVS paster diode packaging structure which characterized in that: the chip and the jumper wire are arranged in a sealing adhesive layer, the jumper wire is welded on the upper surface and the lower surface of the chip, the pin is located at one end of the sealing adhesive layer and connected with the jumper wire, the other end of the sealing adhesive layer extends out of the sealing adhesive layer, and a heat dissipation copper sheet corresponding to the jumper wire and the welding position of the chip is arranged on the upper surface of the top jumper wire in the sealing adhesive layer.
2. The package structure of a common TVS chip diode as claimed in claim 1, wherein: and a heat dissipation copper sheet I which is arranged corresponding to the welding position of the jumper wire and the chip is arranged on the lower surface of the jumper wire at the bottom in the adhesive sealing layer.
3. A common TVS chip diode package structure as recited in claim 1 or 2, wherein: shrinkage holes convenient for plastic packaging and glue injection are formed in the middle of the periphery of the heat dissipation copper sheet.
4. A common TVS chip diode package structure as recited in claim 1 or 2, wherein: and four corners of the heat dissipation copper sheet and the heat dissipation copper sheet I are provided with chamfers or fillets convenient for plastic packaging and glue injection.
5. The package structure of a common TVS chip diode as claimed in claim 1, wherein: the pin sets up to U template structure, and U template one side sets up in gluing the glue layer, the both sides of gluing the glue layer bottom are provided with the holding tank that holds U template opposite side.
6. The package structure of a common TVS chip diode as claimed in claim 4, wherein: the jumper wire includes the current conducting plate and connects at current conducting plate one end and be used for the connecting portion of being connected with the pin, and the current conducting plate bottom is provided with the welding part.
7. A common TVS chip diode package structure as recited in claim 6, wherein: the connecting portion and the current conducting plate are arranged in parallel, and an oblique connecting strip is arranged between the connecting portion and the current conducting plate.
8. A common TVS chip diode package structure as recited in claim 3, wherein: and the heat dissipation copper sheet I is connected with the pin I and the pin is connected with the jumper wire in a welding mode.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202022093202.9U CN213635962U (en) | 2020-09-22 | 2020-09-22 | Ordinary TVS paster diode packaging structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202022093202.9U CN213635962U (en) | 2020-09-22 | 2020-09-22 | Ordinary TVS paster diode packaging structure |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN213635962U true CN213635962U (en) | 2021-07-06 |
Family
ID=76652853
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202022093202.9U Active CN213635962U (en) | 2020-09-22 | 2020-09-22 | Ordinary TVS paster diode packaging structure |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN213635962U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN116995041A (en) * | 2023-09-26 | 2023-11-03 | 深圳平创半导体有限公司 | Packaging structure and packaging method of power semiconductor device |
-
2020
- 2020-09-22 CN CN202022093202.9U patent/CN213635962U/en active Active
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN116995041A (en) * | 2023-09-26 | 2023-11-03 | 深圳平创半导体有限公司 | Packaging structure and packaging method of power semiconductor device |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN213635977U (en) | Paster diode packaging structure of multi-chip lamination | |
| CN213635962U (en) | Ordinary TVS paster diode packaging structure | |
| CN211743142U (en) | Double-chip heat-conducting patch diode | |
| CN218730911U (en) | Double-sided heat dissipation packaging structure with internal insulation | |
| CN111883492A (en) | Photovoltaic bypass diode module unit and processing technology thereof | |
| CN212517190U (en) | Bridge-connected positive-placing structure for diode packaging | |
| CN210245487U (en) | Diode and electrode connecting sheet thereof | |
| CN104882427B (en) | A kind of plastic sealed IPM modular electricals attachment structure | |
| CN212485342U (en) | SMD diode with reliable structure | |
| CN210778611U (en) | Rectifier diode based on MOS high-efficient chip | |
| CN112259517A (en) | Photovoltaic module bypass element soldering lug, bypass protection element module and junction box | |
| CN210467820U (en) | Anti-fracture patch type diode | |
| CN213783706U (en) | PCB board with paster diode packaging structure | |
| CN216389343U (en) | GPP chip packaging structure | |
| CN212517189U (en) | Novel common cathode diode packaging structure | |
| CN213635970U (en) | Vehicle high-power surface mount device TVS diode packaging structure | |
| CN203367267U (en) | Solder dosage-self adaptive rectifier structure | |
| CN219246686U (en) | Patch diode | |
| CN110648991A (en) | Adapter plate bonding structure for frame packaged chip and processing method thereof | |
| CN214850990U (en) | Bridge rectifier with high heat dissipation index | |
| CN212750881U (en) | Semiconductor power device | |
| CN214542227U (en) | Diode with high power density | |
| CN213212157U (en) | Photovoltaic module bypass element soldering lug, bypass protection element module and junction box | |
| CN211017095U (en) | Photovoltaic bypass diode in thin film solar field | |
| CN218939657U (en) | Patch diode connected through conductive adhesive |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GR01 | Patent grant | ||
| GR01 | Patent grant |