CN216624262U - Semiconductor wafer aluminum pressure welding spot bonding structure - Google Patents

Semiconductor wafer aluminum pressure welding spot bonding structure Download PDF

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Publication number
CN216624262U
CN216624262U CN202121918918.6U CN202121918918U CN216624262U CN 216624262 U CN216624262 U CN 216624262U CN 202121918918 U CN202121918918 U CN 202121918918U CN 216624262 U CN216624262 U CN 216624262U
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China
Prior art keywords
layer
semiconductor wafer
copper wire
palladium
copper
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CN202121918918.6U
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Chinese (zh)
Inventor
叶林旺
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Jiangsu Weisenmei Microelectronics Co ltd
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Jiangsu Weisenmei Microelectronics Co ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors

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  • Wire Bonding (AREA)

Abstract

The utility model discloses an aluminum pressure welding spot bonding structure of a semiconductor wafer, which relates to the technical field of semiconductors, and comprises a substrate, the semiconductor wafer and a copper wire, wherein the semiconductor wafer is arranged on the surface of the substrate through a die attach adhesive, an aluminum layer is bonded on the semiconductor wafer, a metal medium part for protecting the semiconductor wafer is arranged on the aluminum layer, a pin welding spot is arranged on the surface of the substrate, the metal medium part sequentially comprises a nickel layer, a palladium layer and a gold layer from inside to outside, and also comprises the palladium gold layer, the palladium gold layer is laid on the surface of the copper wire, the nickel layer, the palladium layer and the gold layer are arranged between the aluminum layer and the copper wire, the aluminum layer and the copper wire can be effectively isolated, the copper wire is prevented from being in direct contact with the aluminum layer, the aluminum bonding surface and the semiconductor wafer are well protected, and the palladium gold layer is laid on the surface of the copper wire, so that no oxidation reaction occurs in the welding process, does not need to increase protective gas, enhances the oxidation resistance and reduces the production cost.

Description

Semiconductor wafer aluminum pressure welding spot bonding structure
Technical Field
The utility model relates to the technical field of semiconductors, in particular to a semiconductor wafer aluminum pressure welding point bonding structure.
Background
The lead bonding is a method using a thin metal wire, the metal lead and a substrate bonding pad are tightly welded by utilizing heat, pressure and ultrasonic energy, so that the electrical interconnection between chips and a substrate and the information intercommunication between chips are realized, compared with a gold wire, the cost of the copper wire is lower, the copper wire has good conductivity and thermal performance, the copper wire has a trend of replacing the gold wire, but the copper wire is very easy to oxidize, the copper oxide layer generated on the surface cannot realize welding, nitrogen protection is required to be configured in the welding process, the production cost is improved, the density of the copper is higher than that of aluminum, the problem of aluminum pad overflow is easy to occur in the bonding process, and even a sensitive and fragile structure under a pressure welding point can be damaged, so that the failure of a device is caused.
SUMMERY OF THE UTILITY MODEL
The utility model aims to provide a semiconductor wafer aluminum pressure welding spot bonding structure, which is provided with a nickel layer I, a palladium layer I and a gold layer I which are arranged between an aluminum layer and a copper wire, can effectively isolate the aluminum layer from the copper wire, avoids the direct contact between the copper wire and the aluminum layer, the copper wire has good protection effect on an aluminum bonding surface and a semiconductor wafer thereof, the palladium-gold layer is laid on the surface of the copper wire, no oxidation reaction occurs in the welding process, no protective gas is required to be added, the oxidation resistance is enhanced, the production cost is reduced, the problems that the copper wire is very easy to oxidize, the copper oxide layer generated on the surface cannot be welded, nitrogen protection is required to be configured in the welding process, the production cost is improved, and the density of copper is greater than that of aluminum, so that the problem of aluminum pad overflow is easily caused in the bonding process, and even a sensitive and fragile structure under a pressure welding point can be damaged, so that the problem of failure of a device is caused.
In order to achieve the purpose, the utility model provides the following technical scheme: the utility model provides a semiconductor wafer aluminium pressure solder joint bonded structure, includes base plate and semiconductor wafer, still includes the copper line, the semiconductor wafer is installed through solid crystal glue the surface of base plate, the bonding has the aluminium lamination on the semiconductor wafer, be provided with on the aluminium lamination and be used for the protection the metal medium part of semiconductor wafer, the surface of base plate is provided with the pin solder joint, the metal medium layer with pass through between the pin solder joint the copper line welds mutually.
Optionally, the metal dielectric member sequentially includes a nickel layer one, a palladium layer and a gold layer one from inside to outside, the thickness of the nickel layer is 4 μm, the thickness of the palladium layer is 0.2 μm, and the thickness of the gold layer one is 0.06 μm.
Optionally, the copper wire further comprises a palladium-gold layer, and the palladium-gold layer is laid on the surface of the copper wire.
Optionally, the copper wire includes an included angle portion, and the included angle degree of the included angle portion is 90 degrees to 120 degrees.
Optionally, the pin pad includes a copper substrate, a nickel layer ii is electroplated on the surface of the copper substrate, and a gold layer ii is electroplated on the surface of the nickel layer.
Optionally, a copper-nickel-gold-palladium-gold-copper metallization interconnection structure is formed at the welding position of the copper wire and the pin welding spot.
Compared with the prior art, the utility model has the following beneficial effects:
the first nickel layer, the first palladium layer and the first gold layer are arranged between the aluminum layer and the copper wire, so that the aluminum layer and the copper wire can be effectively isolated, the copper wire and the aluminum layer are prevented from being in direct contact, a good joint can be formed between the copper wire and the first nickel layer through a chemical autocatalytic reaction, a Kenkedel cavity can not be formed, and an aluminum bonding surface and a semiconductor wafer thereof are well protected.
By arranging the included angle part, when the external temperature changes greatly and the expansion or contraction pulling force is applied to the copper wire by the expansion with heat and the contraction with cold of the colloid, the included angle part plays a role in buffering extension, reduces the stress of a connecting point of the copper wire and the semiconductor wafer, avoids the fracture and prolongs the service life of the structure.
Thirdly, the surface of the copper wire is laid with the palladium-gold layer, so that the outer surface of the copper wire is isolated from the outside air by utilizing the characteristic that the palladium-gold is not easy to oxidize, no oxidation reaction occurs in the welding process, and no protective gas is needed to be added, thereby simplifying the process, and enhancing the oxidation resistance and the production cost.
Drawings
FIG. 1 is a front view of the structure of the present invention;
FIG. 2 is a partial front view of the structure of the present invention;
fig. 3 is a partial cross-sectional view of the structure of the present invention.
In the figure: 1. a substrate; 2. a semiconductor wafer; 3. an aluminum layer; 4. a first nickel layer; 5. a palladium layer; 6. a first gold layer; 7. an included angle part; 8. a copper wire; 9. a copper-nickel-gold-palladium-gold-copper metallization interconnect structure; 10. a pin welding spot; 11. a copper base material; 12. a second nickel layer; 13. a second gold layer; 15. a palladium gold layer.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
Referring to fig. 1 to 3, the present invention provides a technical solution: the utility model provides a semiconductor wafer aluminium pressure solder joint bonded structure, including base plate 1 and semiconductor wafer 2, still include copper line 8, semiconductor wafer 2 installs on base plate 1's surface through solid crystal glue, semiconductor wafer 2 is gone up to bond has aluminium lamination 3, be provided with the metal medium part that is used for protecting semiconductor wafer 2 on the aluminium lamination 3, base plate 1's surface is provided with pin solder joint 10, weld through copper line 8 between metal medium layer and the pin solder joint 10 mutually, through setting up the metal medium part when using, can avoid copper line 8 and aluminium lamination 3 direct contact, play fine guard action to aluminium bonding face and its semiconductor wafer 2.
Further, the metal medium component comprises a nickel layer 4, a palladium layer 5 and a gold layer 6 in sequence from inside to outside, the thickness of the nickel layer 4 is 4 microns, the thickness of the palladium layer 5 is 0.2 microns, the thickness of the gold layer 6 is 0.06 microns, when the copper medium component is used, the nickel layer 4 and the palladium layer 5 and the gold layer 6 are arranged between the aluminum layer 3 and the copper line 8, the aluminum layer 3 and the copper line 8 can be effectively isolated, the copper line 8 is prevented from being in direct contact with the aluminum layer 3, good joint can be formed between the copper line 8 and the copper line through chemical autocatalysis reaction, a Kekedel hole cannot be formed, and the aluminum bonding surface and the semiconductor wafer 2 of the aluminum bonding surface are well protected.
In order to enhance the oxidation resistance and reduce the production cost, the copper wire structure further comprises a palladium-gold layer 15, the palladium-gold layer 15 is laid on the surface of the copper wire 8, the characteristic that palladium-gold is not easy to oxidize can be utilized, the outer surface of the copper wire 8 is isolated from the outside air, no oxidation reaction occurs in the welding process, and no protective gas is needed to be added, so that the process is simplified, the oxidation resistance is enhanced, and the production cost is reduced.
In order to reduce the atress of copper line 8 and semiconductor wafer 2 tie point, avoid breaking occur, improved the life of structure, it is further that copper line 8 includes contained angle portion 7, and contained angle degree of 7 of contained angle portion is 90 ~ 120, through setting up contained angle portion 7, and it is great when external temperature changes, and the expend with heat and contract with cold of colloid exerts the power of dragging of expansion or shrink to copper line 8, and contained angle portion 7 plays the effect that the buffering extends.
Furthermore, the pin welding point 10 comprises a copper substrate 11, a second nickel layer 12 is electroplated on the surface of the copper substrate 11, and a second gold layer 13 is electroplated on the surface of the second nickel layer 12, so that the firmness of connection between the copper wire 8 and the pin welding point 10 is enhanced in use.
In order to reduce the production cost and save metal resources, further, a copper-nickel-gold-palladium-gold-copper metallized interconnection structure 9 is formed at the welding position of the copper wire 8 and the pin welding spot 10, so that the copper wire 8 can be used as an inner lead to replace a traditional gold wire in circuit packaging, the production cost is reduced, and the metal resources are saved.
The working principle is as follows: when the semiconductor wafer aluminum pressure welding spot bonding structure is used, the nickel layer I4, the palladium layer 5 and the gold layer I6 are arranged between the aluminum layer 3 and the copper wire 8, so that the aluminum layer 3 and the copper wire 8 can be effectively isolated, the copper wire 8 is prevented from being in direct contact with the aluminum layer 3, a good joint can be formed between the copper wire 8 through a chemical autocatalysis reaction, a Kekender cavity can not be formed, and the aluminum bonding surface and the semiconductor wafer 2 thereof can be well protected;
by laying the palladium-gold layer 15 on the surface of the copper wire 8, the outer surface of the copper wire 8 can be isolated from the outside air by utilizing the characteristic that palladium-gold is not easy to oxidize, no oxidation reaction occurs in the welding process, and no protective gas is needed to be added, so that the process is simplified, the oxidation resistance is enhanced, and the production cost is reduced;
through setting up contained angle portion 7, it is great when ambient temperature changes, the expend with heat and contract with cold of colloid exert the power of dragging of inflation or shrink to copper line 8, contained angle portion 7 plays the effect that the buffering extends, reduces the atress of copper line 8 and 2 tie points of semiconductor wafer, avoids breaking, has improved the life of structure.
Although embodiments of the present invention have been shown and described, it will be appreciated by those skilled in the art that changes, modifications, substitutions and alterations can be made in these embodiments without departing from the principles and spirit of the utility model, the scope of which is defined in the appended claims and their equivalents.

Claims (6)

1. The utility model provides a semiconductor wafer aluminium pressure welding point bonded structure, includes base plate (1) and semiconductor wafer (2), its characterized in that: still include copper line (8), semiconductor wafer (2) are installed through solid crystal glue the surface of base plate (1), semiconductor wafer (2) are gone up the bonding and have aluminium lamination (3), be provided with on aluminium lamination (3) and be used for the protection the metal medium part of semiconductor wafer (2), the surface of base plate (1) is provided with pin solder joint (10), metal medium layer with pass through between pin solder joint (10) copper line (8) welds mutually.
2. The semiconductor wafer aluminum pressure welding point bonding structure of claim 1, characterized in that: the metal medium component sequentially comprises a nickel layer I (4), a palladium layer (5) and a gold layer I (6) from inside to outside, wherein the thickness of the nickel layer I (4) is 4 mu m, the thickness of the palladium layer (5) is 0.2 mu m, and the thickness of the gold layer I (6) is 0.06 mu m.
3. The semiconductor wafer aluminum pressure welding point bonding structure according to any one of the claims 1 or 2, characterized in that: the copper wire is characterized by further comprising a palladium-gold layer (15), wherein the palladium-gold layer (15) is laid on the surface of the copper wire (8).
4. The semiconductor wafer aluminum pressure welding point bonding structure of claim 3, characterized in that: the copper wire (8) comprises an included angle part (7), and the included angle degree of the included angle part (7) is 90-120 degrees.
5. The semiconductor wafer aluminum pressure welding point bonding structure of claim 4, characterized in that: the pin welding point (10) comprises a copper base material (11), wherein a second nickel layer (12) is electroplated on the surface of the copper base material (11), and a second gold layer (13) is electroplated on the surface of the second nickel layer (12).
6. The semiconductor wafer aluminum pressure welding point bonding structure of claim 5, characterized in that: and a copper-nickel-gold-palladium-gold-copper metallized interconnection structure (9) is formed at the welding position of the copper wire (8) and the pin welding spot (10).
CN202121918918.6U 2021-08-17 2021-08-17 Semiconductor wafer aluminum pressure welding spot bonding structure Active CN216624262U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202121918918.6U CN216624262U (en) 2021-08-17 2021-08-17 Semiconductor wafer aluminum pressure welding spot bonding structure

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN202121918918.6U CN216624262U (en) 2021-08-17 2021-08-17 Semiconductor wafer aluminum pressure welding spot bonding structure

Publications (1)

Publication Number Publication Date
CN216624262U true CN216624262U (en) 2022-05-27

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