CN213581423U - Middle and far infrared optical filter for sensor - Google Patents
Middle and far infrared optical filter for sensor Download PDFInfo
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- CN213581423U CN213581423U CN202022491535.7U CN202022491535U CN213581423U CN 213581423 U CN213581423 U CN 213581423U CN 202022491535 U CN202022491535 U CN 202022491535U CN 213581423 U CN213581423 U CN 213581423U
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Abstract
The utility model provides a well far infrared light filter for sensor, including base plate, first membrane heap and second membrane heap, the first membrane heap deposits on the base plate upper surface, the second membrane heap deposits on the base plate lower surface, and the membrane system design structure is G |0.5HL0.5H | ^ L Air; wherein G is double-polished single crystal silicon substrate, H represents the high refractive index material layer of a lambda/4 optical thickness, L represents the low refractive index material layer of a lambda/4 optical thickness, "^" can be odd or even, and Air is the Air, membrane system design structure is plated for the ZnS through the high refractive index material layer that coincide in turn each other for Ge and low refractive index material layer L and is formed, the utility model discloses an use monocrystalline silicon to carry out the two-sided coating heap as the base plate, cut off the infrared light of wavelength within the 0.4 mu m-5 mu m scope, the Longpass Filters that the infrared was gone through within the 5.5 mu m-14 mu m wave band scope.
Description
Technical Field
The utility model relates to an optical coating technical field especially indicates a well far infrared light filter for sensor.
Background
Longpass Filters are important components of the sensor and are key windows for limiting the performance of the sensor, and the infrared filter plays a crucial role in the sensor, and the performance superiority and inferiority of the infrared filter directly influence the sensitivity and accuracy of the sensor. The key of the performance of the infrared filter is the film system design, the filter plays a crucial role in the sensor, the energy of a stray light wave band is filtered, and only light with a specific effective wave band passes through the filter. Moisture, carbon dioxide and the like in the atmosphere have strong absorption effects on infrared light with specific wavelength, and if the thermopile sensor receives the radiation energy, the interference of the concentration of atmospheric components can be easily caused, so that the output result of the sensor is influenced. The optical filter has low transmittance in the wave band less than 5 μm, so that the absorption wave bands of water vapor, carbon dioxide and the like in the atmosphere can be filtered, and the temperature sensor can not be interfered. The optical sensor has high transmittance in a wave band larger than 5 mu m, particularly in a wave band of 9-14 mu m corresponding to life rays, so that the optical sensor has higher flexibility. The instrument for testing the temperature of the object in the far infrared band is called as a far infrared thermometer, the infrared radiation characteristic of the object has a density relation with the temperature indicated by the infrared radiation characteristic, and therefore the surface temperature of the object can be accurately measured by accurately measuring the self-radiation infrared energy of the object. The infrared temperature measuring detector is used for collecting infrared rays emitted by an object, and cannot emit any harmful radiation, so that the infrared temperature measuring detector is completely harmless to the object. However, the infrared Longpass Filters with 5.5 micron front cutoff provided by the prior art have low signal-to-noise ratio and poor precision, and can not meet the development requirements of the existing market.
SUMMERY OF THE UTILITY MODEL
Technical problem to be solved
The utility model aims to provide a well far infrared filter for sensor carries out two-sided coating heap through using monocrystalline silicon to carry out as the base plate, ends the infrared light of wavelength 0.4 mu m-5 mu m within range, and 5.5 mu m-14 mu m wave band within range infrared Longpass Filters that sees through. In order to achieve the above purpose, the utility model adopts the following technical scheme:
(II) technical scheme
A middle and far infrared filter for a sensor comprises a substrate, a first film stack and a second film stack, wherein the first film stack is deposited on the upper surface of the substrate, the second film stack is deposited on the lower surface of the substrate, and the design structure of a film system is G |0.5HL0.5H | ^ L Air; wherein G is a double-polished single-crystal silicon substrate, H represents a high refractive index material layer with an optical thickness of lambda/4, L represents a low refractive index material layer with an optical thickness of lambda/4, "^" can be odd or even, and Air is Air, the film system design structure is formed by plating the high refractive index material layer H and the low refractive index material layer L which are alternately overlapped with each other, and the first film stack structure is G/1.281H 1.560L 0.969H 1.761L0.975H 2.075L0.823H 2.056L 0.703H 5.301L 1.734H 5.531L2.883H 4.425L2.661H 5.934L 2.778H 4.560L 3.281H 2.560L3.281H 10.560L/Air; the second film stack structure is G/0.918H 1.450L 1.721H1.181L 1.641H 1.641H2.025L 2.263H 2.426L 1.313H 2.201L 1.424H2.961L 1.312H2.411L 1.251.251H 2.294L 1.268H 2.240L 3.671H1.460L 4.361H1.434L 3.438H 1.660L 2.211H 2.860L 2.181H3.160 L2.183H 11.160L/Air, wherein the number before H and L is the thickness proportion coefficient of the film system film layers, the high-refractive-index material layer H is Ge, and the low-refractive-index material layer L is ZnS.
Further, the thickness of the high refractive index material layer H is 0.1-0.5 μm.
Further, the thickness of the low refractive index material layer L is 0.1-1.5 μm.
(III) advantageous effects
Compared with the prior art, the utility model have obvious advantage and beneficial effect, particularly, the utility model discloses an use two throwing piece monocrystalline silicon to carry out two-sided coating heap as the basement, can effective filtering wavelength at infrared energy below 5 mu m, high see through in the required wave band 8 mu m-14 mu m within range of object detection temperature to anti-reflection average transmittance is greater than 88%, can be fine be applied to infrared focal plane detector field of non-refrigeration type, has high transmittance, and the sensor has characteristics such as higher spirit degree.
Drawings
FIG. 1 is a diagram of a membrane system according to the present invention;
FIG. 2 is a schematic diagram of a transmittance spectrum of a substrate according to the present invention;
FIG. 3 is a schematic diagram of a transmittance spectrum of a single-sided first film stack of the middle substrate of the present invention;
FIG. 4 is a schematic diagram of the transmittance spectrum of the second film stack coated on a single surface of the substrate according to the present invention;
fig. 5 is a schematic diagram of the transmittance spectrum of the present invention.
Detailed Description
Reference will now be made in detail to embodiments of the present invention, examples of which are illustrated in the accompanying drawings, wherein like reference numerals refer to the same or similar elements or elements having the same or similar function throughout. The embodiments described below with reference to the drawings are exemplary and intended to be used for explaining the present invention, and should not be construed as limiting the present invention.
The present invention will be further described with reference to the accompanying drawings and the detailed description.
Referring to fig. 1, a middle and far infrared filter for a sensor includes a substrate, a first film stack deposited on an upper surface of the substrate, and a second film stack deposited on a lower surface of the substrate, wherein the film is designed to have a structure of G |0.5HL0.5H | ^ L Air; wherein G is a double-polished single-crystal silicon substrate, H represents a high refractive index material layer with an optical thickness of lambda/4, L represents a low refractive index material layer with an optical thickness of lambda/4, "^" can be odd or even, and Air is Air, the film system design structure is formed by plating the high refractive index material layer H and the low refractive index material layer L which are alternately overlapped with each other, and the first film stack structure is G/1.281H 1.560L 0.969H 1.761L0.975H 2.075L0.823H 2.056L 0.703H 5.301L 1. 5.531L2.883H 4.425.425L 2.661H 5.934L 2.778H 4.560L 3.281H 2.560L3.281H 10.560L/Air; the second film stack structure is G/0.918H 1.450L 1.721H1.181L 1.641.641H 2.025L 2.263H 2.426L 1.313H 2.201L 1.424H2.961L 1.312.312H 2.411L 1.251H 2.294L 1.268H 2.240L 3.671H1.460L 4.361H1.434L 3.438H 1.660L 2.211H 2.860L 2.181H3.160L 2.183.183H 11.160L/Air, wherein the number before H and L is the thickness proportion coefficient of the film system film layers, the high-refractive-index material layer H is Ge, and the low-refractive-index material layer L is ZnS.
In order to further optimize the embodiment, the thickness of the high refractive index material layer H is 0.1-0.5 μm, and the thickness of the low refractive index material layer L is 0.1-1.5 μm.
Please refer to fig. 2 to 5, the utility model discloses a regular membrane stack structure is passed to long wave, and the deposition of membrane system control mode adopts quartz crystal oscillator control, selects central wavelength lambda to be 5.5 μm, and the membrane system uses Essential Macleod or Tfcalc membrane system software optimal design, can see out from the transmittance spectrum of fig. 2-5, the utility model discloses a membrane system structure can effectively filter the wavelength and at the infrared energy below 5 μm, and the required wave band 8 μm-14 μm within range height of temperature is surveyed at the object is passed through to the average transmissivity of anti-reflection is greater than 88%.
The utility model discloses an infrared Longpass Filters with two throwing piece monocrystalline silicon as basement can effective filtering wavelength at the infrared energy below 5 mu m, high see through in the required wave band 8 mu m-14 mu m within range of object detection temperature to the anti-reflection average transmittance is greater than 88%, can be fine be applied to the infrared focal plane detector field of non-refrigeration type, has high transmittance, and the sensor has characteristics such as higher luminance.
The above description is only a preferred embodiment of the present invention, and is not intended to limit the technical scope of the present invention, so that any slight modifications, equivalent changes and modifications made by the technical spirit of the present invention to the above embodiments are all within the scope of the technical solution of the present invention.
Claims (3)
1. A middle and far infrared filter for a sensor is characterized in that: the film system comprises a substrate, a first film stack and a second film stack, wherein the first film stack is deposited on the upper surface of the substrate, the second film stack is deposited on the lower surface of the substrate, and the film system design structure is G |0.5HL0.5H | ^ L Air; wherein G is a double-polished single-crystal silicon substrate, H represents a high refractive index material layer with an optical thickness of lambda/4, L represents a low refractive index material layer with an optical thickness of lambda/4, "^" can be odd or even, and Air is Air, the film system design structure is formed by plating the high refractive index material layer H and the low refractive index material layer L which are alternately overlapped with each other, and the first film stack structure is G/1.281H 1.560L 0.969H 1.761L0.975H 2.075L0.823H 2.056L 0.703H 5.301L 1.734H 5.531L2.883H 4.425L2.661H 5.934L 2.778H 4.560L 3.281H 2.560L3.281H 10.560L/Air; the second film stack structure is G/0.918H 1.450L 1.721H1.181L 1.641H2.025L 2.263H 2.426L 1.313H 2.201L 1.424H2.961L 1.312H2.411L 1.251H 2.294L 1.268H 2.240L 3.671H1.460L 4.361H1.434L 3.438H 1.660L 2.211H 2.860L 2.181H3.160L 2.183H 11.160L/Air, wherein the number before H and L is the thickness proportional coefficient of the film-series film layers, the high-refractive-index material layer H is Ge, and the low-refractive-index material layer L is ZnS.
2. The mid-far infrared filter for a sensor according to claim 1, characterized in that: the thickness of the high-refractive-index material layer H is 0.1-0.5 μm.
3. The mid-far infrared filter for a sensor according to claim 1, characterized in that: the thickness of the low-refractive index material layer L is 0.1-1.5 μm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202022491535.7U CN213581423U (en) | 2020-11-02 | 2020-11-02 | Middle and far infrared optical filter for sensor |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202022491535.7U CN213581423U (en) | 2020-11-02 | 2020-11-02 | Middle and far infrared optical filter for sensor |
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| Publication Number | Publication Date |
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| CN213581423U true CN213581423U (en) | 2021-06-29 |
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| CN202022491535.7U Active CN213581423U (en) | 2020-11-02 | 2020-11-02 | Middle and far infrared optical filter for sensor |
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