CN213459718U - Insulating type power semiconductor module - Google Patents
Insulating type power semiconductor module Download PDFInfo
- Publication number
- CN213459718U CN213459718U CN202022957638.8U CN202022957638U CN213459718U CN 213459718 U CN213459718 U CN 213459718U CN 202022957638 U CN202022957638 U CN 202022957638U CN 213459718 U CN213459718 U CN 213459718U
- Authority
- CN
- China
- Prior art keywords
- power semiconductor
- insulating ceramic
- ceramic base
- static insulating
- electronic element
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Abstract
The utility model discloses an insulating type power semiconductor module relates to power semiconductor module field, does not have the radiating mechanism of initiative for solving current power semiconductor module, and heat dispersion remains the problem that improves. Prevent being provided with the electronic component mounting panel on the upper end surface of static insulating ceramic base, electronic component has been spot-welded on the surface of electronic component mounting panel, be provided with the internal safety cover of power semiconductor on the upper end surface of static insulating ceramic base, the external portion at electronic component of the internal safety cover of power semiconductor, the space department between the internal safety cover of power semiconductor and the electronic component is filled there is heat conduction silicone grease, fixedly connected with power semiconductor radiating fin on the surface of the internal safety cover of power semiconductor.
Description
Technical Field
The utility model relates to a power semiconductor module field specifically is an insulating type power semiconductor module.
Background
The power semiconductor device is a high power device that performs power conversion and control. The electronic device can be directly used in a main circuit for processing electric energy to realize the conversion or control of the electric energy. The semiconductor module is mainly used for rectifiers, inverters, choppers, alternating-current voltage regulators and the like, and is widely applied to various fields of industrial and agricultural production, national defense, traffic and the like, wherein the power semiconductor module is an important component of a power semiconductor device.
The existing power semiconductor module has no active heat dissipation mechanism, the heat dissipation performance needs to be improved, and in order to increase the heat dissipation mechanism, the heat dissipation performance is enhanced; therefore, the market is urgently needed to develop an insulation type power semiconductor module to help people solve the existing problems.
SUMMERY OF THE UTILITY MODEL
An object of the utility model is to provide an insulating type power semiconductor module to solve current power semiconductor module among the above-mentioned background art and do not have the radiating mechanism of initiative, heat dispersion remains the problem that improves.
In order to achieve the above object, the utility model provides a following technical scheme: an insulating type power semiconductor module comprises an anti-static insulating ceramic base, wherein an electronic element mounting plate is arranged on the outer surface of the upper end of the anti-static insulating ceramic base, an electronic element is spot-welded on the outer surface of the electronic element mounting plate, an inner power semiconductor protection cover is arranged on the outer surface of the upper end of the anti-static insulating ceramic base and covers the outer part of the electronic element, heat-conducting silicone grease is filled in a gap between the inner power semiconductor protection cover and the electronic element, and a power semiconductor radiating fin is fixedly connected to the outer surface of the inner power semiconductor protection cover; the utility model discloses a power semiconductor device, including power semiconductor inner protective cover, anti-static insulating ceramic dustcoat has been cup jointed to the outside of power semiconductor inner protective cover, anti-static insulating ceramic dustcoat bonds on the upper end surface of anti-static insulating ceramic base through glue, all be provided with the heat dissipation through-hole on the surface of anti-static insulating ceramic dustcoat.
Preferably, two ends of the electronic component mounting plate are respectively provided with a power semiconductor electrical connection sheet, and the power semiconductor electrical connection sheet is electrically connected with the electronic component.
Preferably, a through groove is formed in the outer surface of the anti-static insulating ceramic base, and the power semiconductor electric connecting sheet is inserted into the through groove.
Preferably, the inner protection cover of the power semiconductor is fixedly connected with the anti-static insulating ceramic base through a bolt, and the electronic element mounting plate is bonded on the outer surface of the upper end of the anti-static insulating ceramic base.
Preferably, two symmetrical ends of the anti-static insulating ceramic base are respectively provided with a limiting fixing groove.
Compared with the prior art, the beneficial effects of the utility model are that:
1. the utility model discloses a through set up the electronic component mounting panel on the upper end surface of preventing static insulating ceramic base, the spot welding has electronic component on the surface of electronic component mounting panel, be provided with the interior safety cover of power semiconductor on the upper end surface of preventing static insulating ceramic base, the interior safety cover of power semiconductor is in electronic component's outside, the space department packing between the interior safety cover of power semiconductor and the electronic component has heat conduction silicone grease, fixedly connected with power semiconductor radiating fin on the surface of the interior safety cover of power semiconductor. The heat generated by the electronic element during working can be conducted to the inner protective cover of the power semiconductor by utilizing the heat-conducting silicone grease, and then the heat dissipation treatment is carried out by the heat dissipation fins of the power semiconductor.
2. The utility model discloses a cup joint through the outside of safety cover in power semiconductor and prevent electrostatic insulating ceramic dustcoat, prevent that electrostatic insulating ceramic dustcoat passes through glue and bonds on preventing the upper end surface of electrostatic insulating ceramic base, prevent all being provided with the heat dissipation through-hole on the surface of electrostatic insulating ceramic dustcoat, this utilization is prevented electrostatic insulating ceramic dustcoat and is prevented that electrostatic insulating ceramic base comes the outside static conduction of effectual separation to electronic component on, avoid electronic component to be damaged by the electric shock, the effectual life who improves this power semiconductor module.
Drawings
FIG. 1 is an internal structural view of the present invention;
fig. 2 is a top view of the present invention;
fig. 3 is a top view of the inner protective cover of the power semiconductor of the present invention.
In the figure: 1. an anti-static insulating ceramic base; 2. an electronic component mounting board; 3. a power semiconductor electrical connection sheet; 4. an electronic component; 5. heat-conducting silicone grease; 6. a power semiconductor inner protective cover; 7. a power semiconductor heat dissipation fin; 8. an anti-static insulating ceramic housing; 9. and the heat dissipation through hole.
Detailed Description
The technical solutions in the embodiments of the present invention will be described clearly and completely with reference to the accompanying drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only some embodiments of the present invention, not all embodiments.
Referring to fig. 1-3, the present invention provides an embodiment: the utility model provides an insulating type power semiconductor module, including preventing static insulating ceramic base 1, be provided with electronic component mounting panel 2 on preventing static insulating ceramic base 1's the upper end surface, electronic component 4 has been spot welded on electronic component mounting panel 2's the surface, prevent being provided with power semiconductor inner protective cover 6 on preventing static insulating ceramic base 1's the upper end surface, power semiconductor inner protective cover 6 covers in electronic component 4's outside, the space department between power semiconductor inner protective cover 6 and the electronic component 4 fills has heat conduction silicone grease 5, fixedly connected with power semiconductor radiating fin 7 on power semiconductor inner protective cover 6's the surface. The heat generated by the electronic element 4 during operation can be conducted to the inner protective cover 6 of the power semiconductor by the heat-conducting silicone grease 5, and then the heat dissipation treatment is carried out by the heat dissipation fins 7 of the power semiconductor, so that compared with the conventional semiconductor module which is used for dissipating heat by an external heat sink, the active heat dissipation mechanism is added, the heat dissipation performance is effectively improved, and the high stability of the power semiconductor module in subsequent operation is ensured.
Further, the outer part of the inner protective cover 6 of the power semiconductor is sleeved with an anti-static insulating ceramic outer cover 8, the anti-static insulating ceramic outer cover 8 is bonded on the outer surface of the upper end of the anti-static insulating ceramic base 1 through glue, and the outer surface of the anti-static insulating ceramic outer cover 8 is provided with a heat dissipation through hole 9. Therefore, the anti-static insulating ceramic outer cover 8 and the anti-static insulating ceramic base 1 are utilized to effectively prevent external static electricity from being conducted to the electronic element 4, the electronic element 4 is prevented from being damaged by electric shock, and the service life of the power semiconductor module is effectively prolonged.
Furthermore, two ends of the electronic component mounting board 2 are respectively provided with a power semiconductor electrical connection sheet 3, and the power semiconductor electrical connection sheet 3 is electrically connected with the electronic component 4.
Further, a through groove is formed in the outer surface of the anti-static insulating ceramic base 1, and the power semiconductor electric connecting sheet 3 is inserted into the through groove.
Further, the inner protection cover 6 of the power semiconductor is fixedly connected with the anti-static insulating ceramic base 1 through bolts, and the electronic component mounting plate 2 is bonded on the outer surface of the upper end of the anti-static insulating ceramic base 1.
Furthermore, two symmetrical ends of the anti-static insulating ceramic base 1 are respectively provided with a limiting fixing groove.
The working principle is as follows: when the power semiconductor module is used, the power semiconductor module is firstly installed at a specified position, and then the power supply is switched on. At this moment, the electronic element 4 normally works through the conduction of the electric connection sheet 3 of the power semiconductor, a large amount of heat can be generated in the working process of the electronic element 4, the generated heat energy is conducted to the inner protection cover 6 of the power semiconductor through the heat conduction silicone grease 5, then is conducted through the inner protection cover 6 of the power semiconductor and then is placed on the heat dissipation fins 7 of the power semiconductor, and finally, the heat is dissipated to the outside through the heat dissipation fins 7 of the power semiconductor, so that the heat dissipation performance is effectively improved. And the anti-static insulating ceramic cover 8 installed on the outer surface of the anti-static insulating ceramic base 1 can effectively avoid the influence of external static electricity on the electronic element 4, and meanwhile, the heat dissipation through holes 9 on the outer surface of the anti-static insulating ceramic cover 8 can effectively ensure the dissipation of internal heat.
It is obvious to a person skilled in the art that the invention is not restricted to details of the above-described exemplary embodiments, but that it can be implemented in other specific forms without departing from the spirit or essential characteristics of the invention. The present embodiments are therefore to be considered in all respects as illustrative and not restrictive, the scope of the invention being indicated by the appended claims rather than by the foregoing description, and all changes which come within the meaning and range of equivalency of the claims are therefore intended to be embraced therein. Any reference sign in a claim should not be construed as limiting the claim concerned.
Claims (5)
1. An insulated power semiconductor module comprising an antistatic insulating ceramic base (1), characterized in that: an electronic element mounting plate (2) is arranged on the outer surface of the upper end of the anti-static insulating ceramic base (1), an electronic element (4) is spot-welded on the outer surface of the electronic element mounting plate (2), an inner power semiconductor protection cover (6) is arranged on the outer surface of the upper end of the anti-static insulating ceramic base (1), the inner power semiconductor protection cover (6) covers the electronic element (4), heat-conducting silicone grease (5) is filled in a gap between the inner power semiconductor protection cover (6) and the electronic element (4), and a power semiconductor heat-radiating fin (7) is fixedly connected to the outer surface of the inner power semiconductor protection cover (6); the outer portion of the inner protection cover (6) of the power semiconductor is sleeved with an anti-static insulating ceramic outer cover (8), the anti-static insulating ceramic outer cover (8) is bonded on the outer surface of the upper end of the anti-static insulating ceramic base (1) through glue, and heat dissipation through holes (9) are formed in the outer surface of the anti-static insulating ceramic outer cover (8).
2. An insulated power semiconductor module according to claim 1, characterized in that: two ends of the electronic element mounting plate (2) are respectively provided with a power semiconductor electrical connection sheet (3), and the power semiconductor electrical connection sheet (3) is electrically connected with the electronic element (4).
3. An insulated power semiconductor module according to claim 2, characterized in that: a through groove is formed in the outer surface of the anti-static insulating ceramic base (1), and the power semiconductor electric connecting sheet (3) is inserted in the through groove.
4. An insulated power semiconductor module according to claim 1, characterized in that: the inner protection cover (6) of the power semiconductor and the anti-static insulating ceramic base (1) are fixedly connected through bolts, and the electronic element mounting plate (2) is bonded on the outer surface of the upper end of the anti-static insulating ceramic base (1).
5. An insulated power semiconductor module according to claim 1, characterized in that: and two symmetrical ends of the anti-static insulating ceramic base (1) are respectively provided with a limiting fixing groove.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202022957638.8U CN213459718U (en) | 2020-12-09 | 2020-12-09 | Insulating type power semiconductor module |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202022957638.8U CN213459718U (en) | 2020-12-09 | 2020-12-09 | Insulating type power semiconductor module |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN213459718U true CN213459718U (en) | 2021-06-15 |
Family
ID=76304546
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202022957638.8U Active CN213459718U (en) | 2020-12-09 | 2020-12-09 | Insulating type power semiconductor module |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN213459718U (en) |
-
2020
- 2020-12-09 CN CN202022957638.8U patent/CN213459718U/en active Active
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP5825264B2 (en) | Battery system | |
| WO2014038299A1 (en) | Power semiconductor module | |
| US4538169A (en) | Integrated alternator bridge heat sink | |
| CN111697846B (en) | Motor controller and vehicle | |
| CN213125974U (en) | Photovoltaic junction box and photovoltaic module | |
| JP2015100223A (en) | Electric power conversion system | |
| JP2014033147A (en) | Terminal box | |
| CN213459718U (en) | Insulating type power semiconductor module | |
| US3783345A (en) | Heat-dissipating encapsulated semi-conductor assembly | |
| CN210467825U (en) | SMD diode with anti-interference structure | |
| JP2011187729A (en) | Electric field radiation-reducing structure | |
| JP5523597B1 (en) | Power converter | |
| CN209806324U (en) | Motor controller and electric vehicle | |
| TWI283508B (en) | Improved rectifier bridge assembly | |
| CN112701880A (en) | Capacitor module insulation heat dissipation mode of power supply | |
| JPS60171751A (en) | Heat dissipating construction of ic | |
| CN213093051U (en) | Bus capacitor heat radiation structure and electric automobile controller | |
| CN218788373U (en) | Anti high voltage diode packaging structure | |
| CN210778564U (en) | Power semiconductor | |
| CN220474617U (en) | High-efficient heat dissipation type bridge rectifier | |
| CN214545322U (en) | Heat radiation structure of high-power supply | |
| CN213151722U (en) | PCBA with wireless power supply module | |
| CN214672591U (en) | Power device packaging structure | |
| CN216184542U (en) | Vehicle-mounted charger radiating through radiating block | |
| CN213343106U (en) | Heat dissipation type controller and electric tool |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GR01 | Patent grant | ||
| GR01 | Patent grant |