CN213425012U

CN213425012U - Inorganic LED packaging structure

Info

Publication number: CN213425012U
Application number: CN202021953353.0U
Authority: CN
Inventors: 马志华
Original assignee: Shenzhen Lepower Opto Electronics Co ltd
Current assignee: Shenzhen Lepower Opto Electronics Co ltd
Priority date: 2020-09-09
Filing date: 2020-09-09
Publication date: 2021-06-11
Anticipated expiration: 2030-09-09

Abstract

The embodiment of the utility model discloses inorganic LED packaging structure, include: the substrate, first pad and second pad, the area of first pad is greater than the area of second pad, and first pad sets up on the substrate with the second pad interval, encloses the frame piece, is fixed in on the substrate, encloses the frame piece and surrounds first pad and second pad setting, encloses to be equipped with the welding layer on the frame piece, and the chip is fixed in on the first pad, and the closing cap, the surface is equipped with the metal level, and the metal level welds on the welding layer. The utility model discloses be inorganic matter or metal in all materials and the process, do not have organic matter composition, so this encapsulation invention is full inorganic packaging technology, the encapsulation that can perfect solution ultraviolet UVLED meets the problem that the light closing cap drops easily.

Description

Inorganic LED packaging structure

Technical Field

The utility model discloses LED encapsulation technical field especially relates to an inorganic LED packaging structure.

Background

In the prior art, the chip is mostly packaged by organic materials such as silica gel and epoxy resin, the materials have good transmittance and are easy to operate, but the ultraviolet resistance is poor, the aging and deterioration are easy to occur in an ultraviolet environment, and the device is easy to lose efficacy due to thermal expansion of the materials, so that the organic materials are not beneficial to packaging the strong ultraviolet LED, and the organic matter is easy to lose efficacy due to ultraviolet irradiation, so that the packaged quartz glass or other seal covers fall off, and an effective solution cannot be obtained.

SUMMERY OF THE UTILITY MODEL

In view of the above, it is necessary to provide an inorganic LED package structure.

An inorganic LED package structure comprising: a substrate, a first electrode and a second electrode,

the first bonding pad and the second bonding pad are arranged on the substrate at intervals, and the area of the first bonding pad is smaller than that of the second bonding pad;

the surrounding frame piece is fixed on the substrate, arranged around the first bonding pad and the second bonding pad and provided with a welding layer;

the chip is fixed on the second bonding pad;

and the surface of the sealing cover is provided with a metal layer, and the metal layer is welded on the welding layer.

The first bonding pad and the second bonding pad are fan-shaped, rectangular or polygonal.

The chip is positioned in a central area formed by splicing the first bonding pad and the second bonding pad into a circle, an ellipse, a rectangle or a hexagon.

Wherein, the closing cap is hemisphere shell-shaped.

Wherein the sealing cover is a glass lens sealing cover.

Wherein the luminous surface of the glass lens is 30-180 degrees.

The chip comprises a normally-mounted UVC wafer and a normally-mounted Zener diode, the normally-mounted UVC wafer and the normally-mounted Zener diode are fixed on the second bonding pad, the normally-mounted UVC wafer is fixed in the center area of the second bonding pad, and the normally-mounted Zener diode is fixed in the edge area of the second bonding pad.

Wherein the height of the surrounding frame piece is 0.1mm-0.99 mm.

Wherein, the surrounding frame piece is a metal surrounding frame.

And a gold layer is arranged on the surface of the surrounding frame piece and fixedly connected with the welding layer.

Adopt the embodiment of the utility model provides a, following beneficial effect has: the substrate, the chip and the sealing cover are all made of inorganic or metal and are fixed together, organic matter components do not exist, the problem that organic matter failure is easily caused by UVC packaging light irradiation is effectively solved, the area of the first bonding pad is different from that of the second bonding pad, the chip is fixed in the central area of the bonding pad, two different electrodes are formed, the chip can be fixed in the central area of the bonding pad, and the heat dissipation effect is better.

Drawings

In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, it is obvious that the drawings in the following description are only some embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to these drawings without creative efforts.

Wherein:

fig. 1 is a schematic view of an inorganic LED package structure according to an embodiment of the present invention;

fig. 2 is a schematic cross-sectional view a-a of the inorganic LED package structure shown in fig. 1.

Detailed Description

The technical solutions in the embodiments of the present invention will be described clearly and completely with reference to the accompanying drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only some embodiments of the present invention, not all embodiments. Based on the embodiments in the present invention, all other embodiments obtained by a person skilled in the art without creative efforts belong to the protection scope of the present invention.

Referring to fig. 1 and 2, an inorganic LED package structure is provided, which includes a substrate 10, a surrounding frame 20, a chip 30, a cap 40, a first pad 50 and a second pad 60, wherein the first pad 50 and the second pad 60 are disposed on the substrate 10 at an interval, an area of the first pad 50 is smaller than an area of the second pad 60, the surrounding frame 20 is fixed on the substrate 10, the surrounding frame 20 is disposed around the first pad 50 and the second pad 60, a bonding layer 21 is disposed on the surrounding frame 20, the chip 30 is fixed on the second pad, a metal layer is disposed on a surface of the cap 40, and the metal layer is bonded on the bonding layer 21.

In this embodiment, the substrate 10 may be an aluminum nitride substrate, the aluminum nitride may be fabricated by using a bare board with a thickness of 0.38mm or 0.5mm, upper and lower surface circuit copper layers are fabricated on the aluminum nitride substrate by a ceramic DPC process, an aluminum nitride PCB double-sided substrate is fabricated by the ceramic DPC process, the chip 30 is fixed on the substrate dipped with the silver paste by using a nano silver paste as a crystal-fixing glue, the nano silver paste is baked at a high temperature in multiple stages, the temperature of 100 ℃ to 150 ℃ is one stage (1h-2h), the temperature of 180 ℃ to 200 ℃ is a second stage (1h-2h), and the temperature of 200 ℃ to 250 ℃ is a third stage (3h-5h), and the chip can be stably fixed on the substrate and is not easily damaged.

In this embodiment, the cover 40 is a glass lens capable of transmitting UV light, including but not limited to quartz glass or sapphire glass capable of transmitting common UV light, the cover glass lens can be at different angles (30-180 degrees), the cover 40 is exemplified by a 60-degree lens, the cover 40 is first metalized, the glass lens is first cleaned by ultrasonic clean water, and is then limited and fixed by a jig, the glass lens is first printed at the same position with a low temperature of 150-200 ℃ and then co-fired at a high temperature in a ceramic sintering furnace at a co-firing temperature of 550-750 ℃ and a co-firing time of about 0.5-2 h after two times of sintering, printing on the glass twice can significantly improve the soldering of the cover to the substrate.

The utility model discloses be inorganic matter or metal in all materials and the process, do not have organic matter composition, so this encapsulation invention is full inorganic packaging technology, the encapsulation that can perfect solution ultraviolet UVLED meets the problem that the light closing cap drops easily.

As shown in fig. 1 and 2, the first bonding pad and the second bonding pad are fan-shaped, rectangular or polygonal.

The chip is positioned in a central area formed by splicing the first bonding pad and the second bonding pad into a circle, an ellipse, a rectangle or a hexagon. Since the first pad 50 and the second pad 60 have a fan shape, a rectangular shape, or a polygonal shape, the first pad 50 and the second pad 60 may have a fan shape, and a circular shape or an elliptical shape may be joined to each other, and the first pad 50 and the second pad 60 may have a rectangular shape or a polygonal shape, and may have a rectangular shape or a hexagonal shape. The bonding pad is flexible and changeable due to the arrangement, and is suitable for various working scenes, so that the working efficiency is greatly improved.

Further, the cover 40 is a hemispherical shell. The cover 40 is a glass lens cover. The luminous surface of the glass lens is 30-180 degrees. In the present scheme, the cover 40 is selected to be hemispherical, in practical production and use, the arc degree of the glass lens of the cover 40 can be different, and the light emitting surface of the glass lens is 30 to 180 degrees, which is the best range according to product requirements, and certainly can exceed the range, which is actually 0 to 180 degrees, only 60 degrees is used in the present scheme, and the present scheme can exceed the range if necessary, and is not limited herein.

Further, the chip 30 includes a mounted UVC wafer 31 and a mounted zener diode 21, the mounted UVC wafer 31 and the mounted zener diode 32 are fixed on the second bonding pad 60, the mounted UVC wafer 31 is fixed on a central region of the second bonding pad 60, and the mounted zener diode 32 is fixed on an edge region of the second bonding pad 60. The first bonding pad 50 and the second bonding pad 60 are spliced to form a circle, the size of the first bonding pad 50 or the size of the second bonding pad 60 are not limited, the area of the first bonding pad 50 can be larger than that of the second bonding pad 60, and the area of the first bonding pad 50 can also be smaller than that of the second bonding pad 60, so that different requirements can be designed, and the production and the application are more convenient and flexible. The chip is generally fixed to the pad having a large area, and thus the chip can be fixed to the central region of the pad, and certainly can be fixed to the pad having a small area under the condition of special application.

Further, the solder layer 21 is a nano silver paste solder layer. The method comprises the steps of carrying out die bonding by using nano silver paste as die bonding glue, fixing a positively mounted UVA wafer 31 and a Zener diode 32 on a substrate 10 dipped with the silver paste, enabling current to stably diffuse by the positively mounted UVA wafer 31 and the Zener diode 32 to achieve uniform light emission, enabling a gold electrode to be highly ordered and good in stability, wherein the nano silver paste has a nano silver content of more than 90%, and after baking is finished, solvent components of the nano silver paste are mainly esters and are completely volatilized through baking, so that a nano silver metal layer is completely left.

Further, the height of the surrounding frame members 20 is 0.1mm to 0.99 mm. The enclosing frame is a metal enclosing frame, the enclosing frame 20 is made of ductile metal or alloy material, and the metal or alloy material is copper or copper alloy. The surface of the surrounding frame piece 20 is provided with a gold layer, and the thickness of the electroplated gold layer is 0.1-0.9 μm. The surrounding frame 20 is made of an electroplated copper layer, the height of the surrounding frame 20 is not limited, usually, the height is 0.1mm-0.99mm, the height of the surrounding frame 20 is determined according to the height of a chip, and the surrounding frame structure is completed through a DPC electroplating process. The enclosure frame can be made of metal or nonmetal, and a metal layer is arranged on the nonmetal. Therefore, the enclosure frame piece can be applied more flexibly and conveniently, and the materials are selected more easily.

The above disclosure is only for the purpose of illustrating the preferred embodiments of the present invention and is not to be construed as limiting the scope of the invention, which is defined by the appended claims.

Claims

1. An inorganic LED package structure, comprising:

a substrate, a first electrode and a second electrode,

the chip is fixed on the second bonding pad;

2. The inorganic LED package structure of claim 1, wherein the first and second bonding pads are each fan-shaped, rectangular, or polygonal.

3. The inorganic LED package structure of claim 2, wherein the chip is located in a central region where the first bonding pad and the second bonding pad are spliced to form a circle, an ellipse, a rectangle or a hexagon.

4. The inorganic LED package structure of claim 1, wherein the cap is hemispherical shell shaped.

5. The inorganic LED package structure of claim 4, wherein the cap is a glass lens cap.

6. The inorganic LED package structure of claim 5, wherein the light emitting face of the glass lens is 30 ° -180 °.

7. The inorganic LED package structure of claim 1, wherein the chip comprises a forward UVC wafer and a forward Zener diode, the forward UVC wafer and the forward Zener diode are both fixed on the second bonding pad, the forward UVC wafer is fixed on the center region of the second bonding pad, and the forward Zener diode is fixed on the edge region of the second bonding pad.

8. The inorganic LED package structure of claim 1, wherein the height of the frame member is 0.1mm-0.99 mm.

9. The inorganic LED package structure of claim 8, wherein said frame member is a metal frame.

10. The inorganic LED package structure of claim 1, wherein a gold layer is disposed on the surface of the frame member, and the gold layer is fixedly connected to the solder layer.