CN213327878U - Wafer electroplating device - Google Patents
Wafer electroplating device Download PDFInfo
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- CN213327878U CN213327878U CN202021137557.7U CN202021137557U CN213327878U CN 213327878 U CN213327878 U CN 213327878U CN 202021137557 U CN202021137557 U CN 202021137557U CN 213327878 U CN213327878 U CN 213327878U
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- power line
- wafer
- shielding
- baffle
- electroplating
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Abstract
The utility model relates to a wafer electroplating device, include: an electroplating bath comprising a bath body; the electroplating shielding part is a closed area formed by a shielding straight line and a shielding arc line, the shielding arc line is tangent to the power line baffle, and the distance from the tangent line of the shielding arc line and the power line baffle to the shielding straight line is 2-4 cm; the anode material plate is arranged close to the inner wall of one side of the tank body; and the wafer fixing part is close to the inner wall of one side of the groove body, which is far away from the anode material plate. Implement the utility model discloses, the homogeneity of lug height in the wafer level encapsulation can be promoted.
Description
Technical Field
The utility model relates to a chip seals the survey field, in particular to wafer electroplating device.
Background
The flip-chip bump technology belongs to wafer-level packaging, and adopts an electrochemical deposition mode to electroplate copper and tin with a certain height on a welding pad opening or a rewiring opening of a chip to form a bump, cuts the wafer into single chips after packaging is completed, then flip-chips the bump on a substrate frame, and conducts the functions inside the chip and external devices through the bump. If the height difference between the bumps on the chip is large, poor welding abnormalities such as cold joint and the like are easily caused, and thus the performance of the chip is affected.
The abnormal welding defects such as cold joint are caused by a plurality of reasons, such as the characteristics of the electroplating tank body and the electroplating liquid medicine, the shape of the through hole of the power line baffle, the position of the power line baffle in the electroplating tank, the edge effect in the electroplating process and the like, which all affect the distribution of the power lines and further affect the uniformity of the height of the convex block.
SUMMERY OF THE UTILITY MODEL
To the above problem of the prior art, an object of the utility model is to provide a device is electroplated to wafer is through reforming transform the power line baffle among the device is electroplated to promote the homogeneity of lug height among the wafer level encapsulation.
The utility model provides a wafer electroplating device, wafer electroplating device includes: a plating bath comprising a bath body for holding a plating solution; the electroplating shielding part is a closed area formed by a shielding straight line and a shielding arc line, the shielding arc line is tangent to the power line baffle, and the distance from the tangent line of the shielding arc line and the power line baffle to the shielding straight line is 2-4 cm; the anode material plate is arranged close to the inner wall of one side of the tank body and is opposite to the power line baffle; the wafer fixing part is close to the inner wall of one side, far away from the anode material plate, of the groove body, and the wafer fixing part is used for fixing a wafer to be electroplated at a position opposite to the power line baffle.
Furthermore, a shielding part through hole is formed in the electroplating shielding part, and the aperture of the shielding part through hole is smaller than or equal to that of the power line baffle.
Furthermore, the shielding part through holes are uniformly distributed on the electroplating shielding part.
Furthermore, the aperture of the through hole of the shielding part is 1-2 mm.
Further, the electroplating shielding part is a high-temperature adhesive tape.
Furthermore, the aperture of the baffle through hole is 2-4 mm.
Furthermore, 3000 and 4000 baffle through holes are uniformly formed in the power line baffle.
Further, the diameter of the power line baffle is consistent with the diameter of the wafer to be electroplated.
Furthermore, the diameter of the power line baffle is 20cm, and 3000 and 4000 baffle through holes are uniformly formed in the power line baffle.
Further, the thickness of the power line baffle is 5-20 mm.
Further, the anode material plate is an anode copper plate or an anode tin plate.
Because of the technical scheme, the utility model discloses following beneficial effect has:
the power line baffle is arranged in the middle of the anode material plate and the wafer to be electroplated, and the electroplating shielding part is used for transforming the power line baffle, so that the distribution of power lines in the electroplating process is adjusted, and the uniformity of the height of the bump after electroplating is improved.
Drawings
In order to more clearly illustrate the technical solution of the present invention, the drawings used in the description of the embodiment or the prior art will be briefly described below. It is obvious that the drawings in the following description are only some embodiments of the invention, and that for a person skilled in the art, other drawings can be derived from them without inventive effort.
FIG. 1 is a schematic structural view of a wafer electroplating apparatus according to an embodiment of the present invention;
FIG. 2 is a schematic view of a power line baffle of a wafer electroplating apparatus according to an embodiment of the present invention;
FIG. 3 is a schematic flow chart of an electroplating preparation process according to an embodiment of the present invention;
FIG. 4 is a schematic structural diagram of a detection of a Mi-character thirteen-point in accordance with an embodiment of the present invention;
FIG. 5 is a schematic diagram of a power line without an electroplating shielding portion in a wafer electroplating apparatus according to an embodiment of the present invention;
fig. 6 is a simulation diagram of a power line when an electroplating shielding portion is disposed in a wafer electroplating apparatus according to an embodiment of the present invention.
In the drawings:
1-plating bath 2-power line baffle 21-plating shielding part
3-anode material plate 4-wafer 41-repassivation layer
42-sputtered layer 43-photoresist layer
Detailed Description
In order to make the technical solution of the present invention better understood, the technical solution of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only some embodiments of the present invention, not all embodiments. Based on the embodiments in the present invention, all other embodiments obtained by a person skilled in the art without creative efforts shall belong to the protection scope of the present invention.
It should be noted that the terms "first", "second", and the like in the description and in the claims and in the drawings of the present invention are used for distinguishing between similar elements and not necessarily for describing a particular sequential or chronological order. It is to be understood that the data so used is interchangeable under appropriate circumstances such that the embodiments of the invention described herein are capable of operation in sequences other than those illustrated or otherwise described herein. Furthermore, the terms "comprising" and "having," as well as any variations thereof, are intended to cover non-exclusive inclusions.
As shown in fig. 1, an embodiment of the present invention provides a wafer electroplating apparatus, which includes an electroplating bath 1, a power line baffle 2, an anode material plate 3 and a wafer fixing portion, wherein,
the electroplating bath 1 comprises bath bodies for containing electroplating solution, each electroplating bath 1 can comprise one or more bath bodies, as shown in fig. 1, the electroplating bath 1 comprises two bath bodies, and the power line baffle 2 is vertically placed in the middle of any one of the bath bodies;
as shown in fig. 2, the power line baffle 2 is a circular plate, a baffle through hole is formed in the power line baffle 2, electroplating shielding portions 21 are symmetrically arranged on two sides of the lower half portion of the tank body of the power line baffle 2, the electroplating shielding portions 21 are closed areas defined by shielding straight lines and shielding arc lines, the shielding arc lines are tangent to the power line baffle 2, and the distance from the tangent lines of the shielding arc lines and the power line baffle 2 to the shielding straight lines is 2-4 cm;
the anode material plate 3 is arranged close to the inner wall of one side of the tank body, and the anode material plate 3 is opposite to the power line baffle 2;
the wafer fixing part is arranged close to the inner wall of one side of the tank body, which is far away from the anode material plate 3, and the wafer fixing part is used for fixing a wafer 4 to be electroplated at a position opposite to the power line baffle plate 2, as shown in fig. 1, because the electroplating tank 1 comprises two tank bodies, and the wafers 4 in each tank body are uniformly arranged on the inner wall of one side of the anode material plate 3 in the tank body, which is to say, the wafers 4 in the two tank bodies are respectively arranged on two sides of the inner wall for separating the two tank bodies.
In the embodiment of the present invention, the specific position of the plating shielding part 21 on the power line baffle 2 can be adjusted within the above-mentioned position range according to actual requirements, and the steps are as follows:
step S1: putting a batch of wafers 4 to be electroplated, and completing preparation work before electroplating, namely arranging a re-passivation layer 41, a sputtering layer 42 (such as a titanium copper seed layer) and a photoresist layer 43 (for preparing an opening for electroplating) on the surface of one side of the wafer 4, which is provided with a welding pad, in sequence, wherein the preparation process before electroplating is shown in fig. 3;
step S2: taking a wafer 4 which finishes the preparation procedures and placing the wafer in a groove body of the wafer electroplating device for electroplating, and measuring the height of a bump on the wafer 4 after electroplating, wherein the height of the bump is measured at a point of Chinese character Mi-type thirteen points, and the inspection of the point of Chinese character Mi-type thirteen points is shown in figure 4;
during the plating process, the entire plating solution is circulated as indicated by the arrows in FIG. 1, and the continuous circulation of the plating solution is provided by the pump. Generally, the plating solution flows out of the bottom of the tank and flows upward through the surface of the wafer 4, and then overflows out of the tank and flows back to the pump after passing through the filter, thereby completing the entire circulation step.
During electroplating, positive charges flow in the tank in a direction opposite to the direction of electron flow, and the flow of charges causes electrochemistry to occur at the surface of the wafer 4 (e.g., Cu)2++2e-Cu) and a metal layer, such as copper, is deposited on the semiconductor wafer 4. The concentration of the plating solution in the plating solution is determined by the entire plating reaction cycle, e.g., metal anode (Cu ═ Cu)2++2e-) Equilibrium is obtained.
Generally, the composition of the plating solution includes Cu2+、Cl-、SO42-Or any combination of the foregoing.
Step S3: the power line baffle 2 is reformed according to the height of the bump, the power line baffle 2 in the area with higher height of the bump at the edge is covered by an electroplating shielding part 21, and the covering position is determined according to the height of the specific bump;
step S4: after transformation, a wafer 4 which is finished with the preparation process is taken again and placed in the tank body for electroplating, the height of the convex block is measured on the wafer 4 in a manner of being shaped like a Chinese character 'mi' and thirteen points after electroplating, and whether the electroplating shielding part 21 of the power line baffle 2 is optimized again is judged according to whether the height of the convex block is uniform or not;
step S5: and repeating the steps S2-S5 until the uniformity of the height of the bump measured by the Mi-shaped thirteen points is completely within the specification range, namely completing the modification of the power line baffle 2.
In practical application, the power line baffle 2 is arranged in the middle of the anode material plate 3 and the wafer 4 to be electroplated, and the electroplating shielding part 21 is used for transforming the power line baffle 2, so that the distribution of power lines in the electroplating process is adjusted, and the uniformity of the heights of the electroplated bumps is improved.
When the electric power line baffle plate 2 is not provided with the plating shielding portion 21, the distribution of electric power lines between the anode material plate 3 and the cathode wafer 4 during the plating process is as shown in fig. 5, and it can be seen that the density of the distribution of electric power lines at the middle portion between the anode material plate 3 and the cathode wafer 4 is lower than the density of the distribution of electric power lines at the two side portions, so that the height of the bump at the edge side of the cathode wafer 4 is higher than the height of the bump at the middle side of the cathode wafer 4 after the plating.
When the plating shielding portion 21 is disposed on the power line baffle 2, the power line distribution during the plating process is as shown in fig. 6, and it can be seen that the density of the power line distribution at the middle portion between the anode material plate 3 and the cathode wafer 4 is similar to or the same as the density of the power line distribution at the two side portions, so that after the plating, the height of the bump at the edge side of the cathode wafer 4 is close to the height of the bump at the middle side of the cathode wafer 4, thereby improving the uniformity of the height of the bump after the plating.
In some embodiments, the electroplating shielding portion 21 may have a shielding portion through hole, the aperture of the shielding portion through hole is smaller than the aperture of the power line shielding plate 2, and the aperture of the shielding portion through hole may be 1-2 mm.
In some embodiments, the shielding portion through holes are uniformly distributed on the plating shielding portion 21, for example, the arrangement of the shielding portion through holes may be consistent with the arrangement of the baffle through holes.
In some embodiments, the plating shielding portion 21 may be a high temperature adhesive tape, and it is understood that, since the plating solution has a certain corrosion resistance, the plating shielding portion 21 also needs to have a certain corrosion resistance, and of course, the plating shielding portion 21 may also be other components that are resistant to high temperature and corrosion and can be adhered or fixed on the plating shielding portion 21.
In some embodiments, the aperture of the baffle through hole may be 2-4 mm.
In some embodiments, the diameter of the power line baffle 2 may be the same as the diameter of the wafer 4 to be plated, and it can be understood that the uniformity of bumps on the wafer 4 after plating can be further improved by disposing the wafer 4 to be plated corresponding to the power line baffle 2 having the same diameter.
In some embodiments, the diameter of the power line baffle 2 is 20cm, and 3000 and 4000 baffle through holes are uniformly formed in the power line baffle 2.
In some embodiments, the power line baffle 2 has a thickness of 5-20 mm.
In some embodiments, the anode material plate 3 is an anode copper plate or an anode tin plate.
The above examples only represent some embodiments of the present invention, and the description thereof is more specific and detailed, but not to be construed as limiting the scope of the present invention. It should be noted that, for those skilled in the art, without departing from the spirit of the present invention, several variations and modifications can be made, which are within the scope of the present invention. Therefore, the protection scope of the present invention should be subject to the appended claims.
Claims (10)
1. A wafer plating apparatus, comprising:
the electroplating bath (1), wherein the electroplating bath (1) comprises a bath body for containing electroplating solution;
the power line baffle (2) is vertically placed in the middle of the tank body, the power line baffle (2) is a circular plate, a baffle through hole is formed in the power line baffle (2), electroplating shielding parts (21) are symmetrically arranged on two sides of the lower half portion of the tank body of the power line baffle (2), the electroplating shielding parts (21) are a closed area formed by a shielding straight line and a shielding arc line, the shielding arc line is tangent to the power line baffle (2), and the distance from the tangent line of the shielding arc line and the power line baffle (2) to the shielding straight line is 2-4 cm;
the anode material plate (3) is arranged close to the inner wall of one side of the tank body, and the anode material plate (3) is opposite to the power line baffle (2);
the wafer fixing part is close to the inner wall of one side, far away from the anode material plate (3), of the groove body, and the wafer fixing part is used for fixing a wafer (4) to be electroplated at a position opposite to the power line baffle (2).
2. A wafer electroplating apparatus according to claim 1, wherein a shielding portion through hole is formed in the electroplating shielding portion (21), and the aperture of the shielding portion through hole is smaller than or equal to the aperture of the power line baffle (2).
3. A wafer plating apparatus according to claim 2, wherein said shielding through holes are uniformly distributed on said plating shielding portion (21).
4. A wafer plating apparatus according to claim 2, wherein the diameter of the through hole of the shielding portion is 1-2 mm.
5. A wafer plating apparatus according to any one of claims 1 to 4, wherein said plating mask (21) is a high temperature tape.
6. The wafer plating apparatus as recited in claim 1, wherein the aperture of the baffle through hole is 2-4 mm.
7. A wafer plating apparatus according to claim 1, characterized in that the diameter of the power line baffle (2) coincides with the diameter of the wafer (4) to be plated.
8. The wafer electroplating device according to claim 1, wherein the diameter of the power line baffle (2) is 20cm, and 3000 and 4000 baffle through holes are uniformly formed on the power line baffle (2).
9. A wafer plating apparatus according to claim 1, wherein the thickness of said power line baffle plate (2) is 5-20 mm.
10. A wafer plating apparatus according to claim 1, wherein the anode material plate (3) is an anode copper plate or an anode tin plate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202021137557.7U CN213327878U (en) | 2020-06-18 | 2020-06-18 | Wafer electroplating device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202021137557.7U CN213327878U (en) | 2020-06-18 | 2020-06-18 | Wafer electroplating device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN213327878U true CN213327878U (en) | 2021-06-01 |
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ID=76080892
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202021137557.7U Active CN213327878U (en) | 2020-06-18 | 2020-06-18 | Wafer electroplating device |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN213327878U (en) |
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2020
- 2020-06-18 CN CN202021137557.7U patent/CN213327878U/en active Active
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