CN212934611U - 显示装置 - Google Patents

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Publication number
CN212934611U
CN212934611U CN202022360540.4U CN202022360540U CN212934611U CN 212934611 U CN212934611 U CN 212934611U CN 202022360540 U CN202022360540 U CN 202022360540U CN 212934611 U CN212934611 U CN 212934611U
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CN
China
Prior art keywords
light emitting
light
emitting element
layer
type semiconductor
Prior art date
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Active
Application number
CN202022360540.4U
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English (en)
Chinese (zh)
Inventor
张锺敏
金彰渊
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seoul Viosys Co Ltd
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Seoul Viosys Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US17/075,636 external-priority patent/US11810944B2/en
Application filed by Seoul Viosys Co Ltd filed Critical Seoul Viosys Co Ltd
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Publication of CN212934611U publication Critical patent/CN212934611U/zh
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
    • H10H29/10—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00
    • H10H29/14—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00 comprising multiple light-emitting semiconductor components
    • H10H29/142—Two-dimensional arrangements, e.g. asymmetric LED layout
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/813—Bodies having a plurality of light-emitting regions, e.g. multi-junction LEDs or light-emitting devices having photoluminescent regions within the bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/831—Electrodes characterised by their shape
    • H10H20/8312—Electrodes characterised by their shape extending at least partially through the bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/831—Electrodes characterised by their shape
    • H10H20/8314—Electrodes characterised by their shape extending at least partially onto an outer side surface of the bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/84—Coatings, e.g. passivation layers or antireflective coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/8506—Containers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/852—Encapsulations
    • H10H20/853—Encapsulations characterised by their shape
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/852—Encapsulations
    • H10H20/854—Encapsulations characterised by their material, e.g. epoxy or silicone resins
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/855—Optical field-shaping means, e.g. lenses
    • H10H20/856—Reflecting means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/857—Interconnections, e.g. lead-frames, bond wires or solder balls
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
    • H10H29/30—Active-matrix LED displays
    • H10H29/34—Active-matrix LED displays characterised by the geometry or arrangement of subpixels within a pixel, e.g. relative disposition of the RGB subpixels
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
    • H10H29/80—Constructional details
    • H10H29/85—Packages
    • H10H29/852—Encapsulations
    • H10H29/853—Encapsulations characterised by their shape
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
    • H10H29/80—Constructional details
    • H10H29/962—Stacked configurations of light-emitting semiconductor components or devices, the components or devices emitting at different wavelengths
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations

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  • Led Device Packages (AREA)
  • Led Devices (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
CN202022360540.4U 2019-10-23 2020-10-21 显示装置 Active CN212934611U (zh)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US201962924737P 2019-10-23 2019-10-23
US62/924,737 2019-10-23
US17/075,636 US11810944B2 (en) 2019-10-23 2020-10-20 LED display apparatus
US17/075,636 2020-10-20

Publications (1)

Publication Number Publication Date
CN212934611U true CN212934611U (zh) 2021-04-09

Family

ID=75311507

Family Applications (2)

Application Number Title Priority Date Filing Date
CN202022360540.4U Active CN212934611U (zh) 2019-10-23 2020-10-21 显示装置
CN202080068801.5A Pending CN114467178A (zh) 2019-10-23 2020-10-21 Led显示装置

Family Applications After (1)

Application Number Title Priority Date Filing Date
CN202080068801.5A Pending CN114467178A (zh) 2019-10-23 2020-10-21 Led显示装置

Country Status (6)

Country Link
EP (1) EP4024452A4 (enExample)
JP (2) JP7561842B2 (enExample)
KR (1) KR20220088675A (enExample)
CN (2) CN212934611U (enExample)
BR (1) BR112022007494A2 (enExample)
MX (1) MX2022003387A (enExample)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114467178A (zh) * 2019-10-23 2022-05-10 首尔伟傲世有限公司 Led显示装置
CN114725276A (zh) * 2022-03-14 2022-07-08 湖南大学 Micro-LED分立器件
CN114725150A (zh) * 2022-03-14 2022-07-08 湖南大学 Micro-LED器件及微显示屏
WO2022220604A1 (ko) * 2021-04-14 2022-10-20 서울바이오시스주식회사 Led 디스플레이용 유닛 픽셀 및 그것을 갖는 디스플레이장치

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2026511883A (ja) * 2023-03-31 2026-04-14 京東方科技集團股▲ふん▼有限公司 発光デバイス、表示装置、およびバックライト装置

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002016312A (ja) 2000-06-27 2002-01-18 Sanyo Electric Co Ltd 窒化物系半導体素子およびその製造方法
TW522534B (en) 2001-09-11 2003-03-01 Hsiu-Hen Chang Light source of full color LED using die bonding and packaging technology
JP4374913B2 (ja) 2003-06-05 2009-12-02 日亜化学工業株式会社 発光装置
US20070170444A1 (en) * 2004-07-07 2007-07-26 Cao Group, Inc. Integrated LED Chip to Emit Multiple Colors and Method of Manufacturing the Same
KR101100579B1 (ko) * 2005-01-06 2012-01-13 엘지이노텍 주식회사 반도체 발광 다이오드 및 그의 제조 방법과 반도체 발광다이오드를 이용한 디스플레이의 제조 방법
TWI244228B (en) 2005-02-03 2005-11-21 United Epitaxy Co Ltd Light emitting device and manufacture method thereof
JP4901241B2 (ja) 2006-02-27 2012-03-21 スタンレー電気株式会社 半導体発光素子及びその製造方法
KR101761834B1 (ko) 2011-01-28 2017-07-27 서울바이오시스 주식회사 웨이퍼 레벨 발광 다이오드 패키지 및 그것을 제조하는 방법
JP6604786B2 (ja) 2015-09-11 2019-11-13 三星電子株式会社 半導体発光装置およびその製造方法
KR102513080B1 (ko) 2016-04-04 2023-03-24 삼성전자주식회사 Led 광원 모듈 및 디스플레이 장치
US11527519B2 (en) * 2017-11-27 2022-12-13 Seoul Viosys Co., Ltd. LED unit for display and display apparatus having the same
US11282981B2 (en) * 2017-11-27 2022-03-22 Seoul Viosys Co., Ltd. Passivation covered light emitting unit stack
US10886327B2 (en) * 2017-12-14 2021-01-05 Seoul Viosys Co., Ltd. Light emitting stacked structure and display device having the same
US11552057B2 (en) * 2017-12-20 2023-01-10 Seoul Viosys Co., Ltd. LED unit for display and display apparatus having the same
US11398462B2 (en) * 2019-09-18 2022-07-26 Seoul Viosys Co., Ltd. Light emitting device for display and light emitting package having the same
BR112022007494A2 (pt) * 2019-10-23 2022-07-12 Seoul Viosys Co Ltd Aparelho de exibição

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114467178A (zh) * 2019-10-23 2022-05-10 首尔伟傲世有限公司 Led显示装置
WO2022220604A1 (ko) * 2021-04-14 2022-10-20 서울바이오시스주식회사 Led 디스플레이용 유닛 픽셀 및 그것을 갖는 디스플레이장치
US12438132B2 (en) 2021-04-14 2025-10-07 Seoul Viosys Co., Ltd. Unit pixel for LED display and LED display apparatus having the same
CN114725276A (zh) * 2022-03-14 2022-07-08 湖南大学 Micro-LED分立器件
CN114725150A (zh) * 2022-03-14 2022-07-08 湖南大学 Micro-LED器件及微显示屏
CN114725276B (zh) * 2022-03-14 2023-10-03 湖南大学 Micro-LED分立器件
CN114725150B (zh) * 2022-03-14 2023-10-03 湖南大学 Micro-LED器件及微显示屏

Also Published As

Publication number Publication date
JP2022553986A (ja) 2022-12-27
US20230369385A1 (en) 2023-11-16
MX2022003387A (es) 2022-07-01
BR112022007494A2 (pt) 2022-07-12
EP4024452A1 (en) 2022-07-06
EP4024452A4 (en) 2023-10-04
JP7863146B2 (ja) 2026-05-20
JP2024180402A (ja) 2024-12-26
CN114467178A (zh) 2022-05-10
JP7561842B2 (ja) 2024-10-04
KR20220088675A (ko) 2022-06-28

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