CN212783433U

CN212783433U - Heat radiation structure of parallelly connected MOSFET power board

Info

Publication number: CN212783433U
Application number: CN202022104098.9U
Authority: CN
Inventors: 程晓华; 刘红; 张晓阳; 王林
Original assignee: Hefei Longkong Intelligent Technology Co ltd
Current assignee: Hefei Longkong Intelligent Technology Co ltd
Priority date: 2020-09-23
Filing date: 2020-09-23
Publication date: 2021-03-23
Anticipated expiration: 2030-09-23

Abstract

The utility model discloses a heat radiation structure of a parallel MOSFET power board, which comprises a power board component and a heat radiation component, wherein the power board component comprises a power board body, a heat insulation board, a relief hole and a heat conducting bolt, the heat radiation component comprises a heat conducting block, a heat conducting sheet and a semiconductor refrigerating sheet, the heat radiation structure of the parallel MOSFET power board can realize the heat absorption and cooling of the interior of the MOSFET power board through the design of the semiconductor refrigerating sheet, the heat radiation performance is improved, the overheating problem easily generated after the long-term operation of the MOSFET power board with the traditional structure is greatly avoided, and the heat conducting bolt, the heat conducting block and the heat conducting sheet are mutually matched, so that the heat absorption can be directly carried out on the front end and the rear end of the MOSFET power board, the heat radiation function is further enhanced, in addition, the limit can be carried out on the heat conducting bolt, and the purpose of good installation firmness can be achieved, finally, the stability of the parallel MOSFET power board is ensured.

Description

Heat radiation structure of parallelly connected MOSFET power board

Technical Field

The utility model relates to a MOSFET power board technical field especially relates to a heat radiation structure of parallelly connected MOSFET power board.

Background

A Metal-Oxide Semiconductor Field Effect Transistor (MOSFET) is a Field-Effect Transistor (Field-Effect Transistor) that can be widely used in analog circuits and digital circuits.

The power MOSFET is mainly used in the fields of computer peripherals (such as drivers, printers and plotters), power supplies, motor controllers, automotive electronics, acoustic circuits and instruments, meters and the like.

According to the aforesaid, the parallelly connected MOSFET power board of prior art because of generating heat easily, though the design has corresponding heat radiation structure, but current heat radiation structure generally does not possess active heat absorption cooling function for passive louvre or heat conduction board etc. nevertheless, leads to the radiating effect poor, brings the problem of very big potential safety hazard for follow-up use. Therefore, in view of the above drawbacks, it is necessary to design a heat dissipation structure for parallel MOSFET power boards.

SUMMERY OF THE UTILITY MODEL

The utility model discloses the technical problem that will solve lies in: a heat dissipation structure of a parallel MOSFET power board is provided to solve the problems in the prior art.

In order to solve the technical problem, the technical scheme of the utility model is that: a heat dissipation structure of a parallel MOSFET power board comprises a power board assembly and a heat dissipation assembly, wherein the power board assembly comprises a power board body, a heat insulation board, a avoiding hole and a heat conducting bolt, the heat dissipation assembly comprises a guide block, a conducting sheet and a semiconductor refrigerating sheet, the heat dissipation assembly is fixedly arranged on the left side of the power board assembly and is connected with the power board assembly through a bolt, the heat insulation board is fixedly arranged on the left side of the power board body, the heat insulation board and the power board body are connected through hot melting, the avoiding hole is arranged inside the power board body and the heat insulation board, the avoiding hole is a rectangular through hole, the heat conducting bolts are a plurality of pieces, the heat conducting bolts are uniformly and fixedly arranged at the front end and the rear end inside the power board body, the heat conducting bolts are connected with the power board body through internal and external threads, the guide block is arranged on the left side of the heat insulation board, lead and lead the piece and adopt swing joint with the insulating plate, the conduction piece set firmly both ends around the piece right side that leads, the conduction piece with lead a piece integrated into one piece, the semiconductor refrigeration piece set firmly in the inside left side of the piece that leads, the semiconductor refrigeration piece with lead the piece and adopt the hot melt to be connected.

Further, the power board body is internally provided with a mounting hole which is a circular through hole, and the power board body is internally provided with a circulation cavity which is a hollow cavity.

Further, both ends still are equipped with the thread groove around the inside left side of heat insulating board, the thread groove be the screw thread recess, the heat insulating board about both ends still set firmly the limiting plate, limiting plate and heat insulating board integrated into one piece.

Furthermore, fastening bolts penetrate through the front end and the rear end of the inner part of the lead block, the fastening bolts are movably connected with the lead block, and the fastening bolts are connected with the thread grooves through internal threads and external threads.

Furthermore, the right side of the semiconductor refrigeration piece is provided with a heat absorption end, the heat absorption end and the semiconductor refrigeration piece are integrally formed, the left side of the semiconductor refrigeration piece is provided with a heat release end, and the heat release end and the semiconductor refrigeration piece are integrally formed.

Compared with the prior art, the heat radiation structure of the parallel MOSFET power board has the following advantages:

1. at first, through the design of the semiconductor refrigeration piece, the heat absorption and cooling of the interior of the MOSFET power board can be realized, the heat dissipation performance is improved, and the overheating problem caused by the fact that the MOSFET power board with a traditional structure is easy to generate after long-term operation is greatly avoided.

2. Secondly by leading the effect that temperature bolt, lead and ally oneself with the piece and conduct the piece structure and mutually support, not only can directly absorb heat to both ends around the MOSFET power board, further strengthened the heat dissipation function, also can carry on spacingly to leading the temperature bolt in addition, make it reach fine installation fastness purpose, finally ensured the stability of parallelly connected MOSFET power board.

Drawings

In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the embodiments or the technical solutions in the prior art will be briefly described below, and it is obvious that the drawings in the following description are some embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to these drawings without creative efforts.

FIG. 1 is a front view of a heat dissipation structure for a parallel MOSFET power board;

FIG. 2 is a top view of a heat dissipation structure for a parallel MOSFET power board;

FIG. 3 is a cross-sectional view A of a heat dissipation structure of a parallel MOSFET power board;

fig. 4 is a perspective view of a heat dissipation structure of a parallel MOSFET power board 1;

fig. 5 is a perspective view 2 of a heat dissipation structure of a parallel MOSFET power board;

fig. 6 is a perspective view of a heat dissipating structure of a parallel MOSFET power board in an isolated state, fig. 1;

fig. 7 is a perspective view of a heat dissipation structure of a parallel MOSFET power board in an isolated state, fig. 2.

The heat dissipation structure comprises a power plate assembly 1, a heat dissipation assembly 2, a power plate body 3, a heat insulation plate 4, avoidance holes 5, heat conduction bolts 6, lead blocks 7, conducting pieces 8, semiconductor refrigeration pieces 9, mounting holes 301, a circulation cavity 302, threaded grooves 401, limiting plates 402, fastening bolts 701, a heat absorption end 901 and a heat release end 902.

The following detailed description will be further described in conjunction with the above-identified drawings.

Detailed Description

In the following description, numerous specific details are set forth in order to provide a thorough understanding of the concepts underlying the described embodiments, however, it will be apparent to one skilled in the art that the described embodiments may be practiced without some or all of these specific details, and in other cases well-known process steps have not been described in detail.

In the description of the present invention, it is to be understood that the terms "upper", "lower", "front", "rear", "left", "right", "top", "bottom", "inner", "outer", and the like indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings, and are only for convenience of description and simplicity of description, and do not indicate or imply that the device or element being referred to must have a specific orientation, be constructed and operated in a specific orientation, and thus, should not be construed as limiting the present invention.

As shown in fig. 1, fig. 2, fig. 3, fig. 4, fig. 5, fig. 6, and fig. 7, a heat dissipation structure of a parallel MOSFET power board includes a power board assembly 1, a heat dissipation assembly 2, a power board body 3, a heat insulation board 4, an avoiding hole 5, a heat conduction bolt 6, a lead block 7, a conduction sheet 8, and a semiconductor refrigeration sheet 9, wherein the heat dissipation assembly 2 is fixedly disposed at the left side of the power board assembly 1, the heat dissipation assembly 2 and the power board assembly 1 are connected by a bolt, the heat insulation board 4 is fixedly disposed at the left side of the power board body 3, the heat insulation board 4 and the power board body 3 are connected by a hot melt, the avoiding hole 5 is disposed inside the power board body 3 and the heat insulation board 4, the avoiding hole 5 is a rectangular through hole, the heat conduction bolts 6 are several in number, the heat conduction bolts 6 are uniformly fixedly disposed at the front and rear ends inside the power board body 3, the heat conduction bolts 6 and the power board body 3 are connected by internal and external threads, the lead block 7 is positioned on the left side of the heat insulation plate 4, the lead block 7 is movably connected with the heat insulation plate 4, the conducting pieces 8 are fixedly arranged at the front end and the rear end of the right side of the lead block 7, the conducting pieces 8 and the lead block 7 are integrally formed, the semiconductor refrigerating piece 9 is fixedly arranged on the left side inside the lead block 7, and the semiconductor refrigerating piece 9 and the lead block 7 are connected in a hot melting mode;

the heat dissipation structure of the parallel MOSFET power board has the following functions;

A. the avoidance hole 5 in the heat insulation plate 4 can facilitate the right side placement of the semiconductor refrigeration sheet 9, and absorbs heat of the circulation cavity 302 in the heat insulation plate, so that the purpose of heat dissipation of one layer is achieved;

B. the temperature conduction bolt 6 can fix a MOSFET power plate (not marked) in the power plate assembly 1, and meanwhile, the outer side of the temperature conduction bolt is provided with a conduction piece 8, after the semiconductor refrigeration piece 9 is opened, the conduction piece 8 and the temperature conduction bolt 6 can absorb heat through the conduction block 7, when the temperature conduction bolt 6 is cooled, the heat dissipation and cooling can be carried out on the front and back of the contacted MOSFET power plate (not marked), meanwhile, the conduction piece 8 also limits the outer side of the temperature conduction bolt 6, and the threaded connection firmness of the temperature conduction bolt 6 and the power plate body 3 is improved;

C. the power board assembly 1 and the heat dissipation assembly 2 are of a combined splicing structure, so that the production and installation are convenient, and the subsequent maintenance and recovery treatment are also convenient;

the power board body 3 is also internally provided with a mounting hole 301, the mounting hole 301 is a circular through hole, the power board body 3 is also internally provided with a circulation cavity 302, and the circulation cavity 302 is a hollow cavity;

it should be noted that the mounting hole 301 can facilitate the insertion of an existing bolt (not labeled) to realize the mounting connection (not labeled) of the MOSFET power board (not labeled) and the existing device carrier, and the circulation cavity 302 facilitates the air circulation to improve the heat dissipation performance;

threaded grooves 401 are further formed in the front end and the rear end of the left side inside the heat insulation plate 4, the threaded grooves 401 are threaded grooves, limiting plates 402 are further fixedly arranged at the upper end and the lower end of the heat insulation plate 4, and the limiting plates 402 and the heat insulation plate 4 are integrally formed;

the threaded groove 401 to be described can facilitate the rotary insertion of the fastening bolt 701, so that the combined fixation of the heat dissipation assembly 2 and the power plate assembly 1 is realized, the limiting plate 402 can achieve the up-and-down guiding and limiting, the guide connection block 7 can be conveniently inserted into the left side of the heat insulation plate 4, and the operation convenience is improved;

fastening bolts 701 penetrate through the front end and the rear end inside the lead block 7, the fastening bolts 701 are movably connected with the lead block 7, and the fastening bolts 701 are connected with the thread grooves 401 through internal and external threads;

it should be noted that the fastening bolts 701 penetrate through the front end and the rear end inside the lead block 7 and are connected with the thread groove 401 by internal and external threads, so that the lead block 7 and the thermal insulation plate 4 can be fixedly connected;

the right side of the semiconductor refrigeration piece 9 is provided with a heat absorption end 901, the heat absorption end 901 is integrally formed with the semiconductor refrigeration piece 9, the left side of the semiconductor refrigeration piece 9 is provided with a heat release end 902, and the heat release end 902 is integrally formed with the semiconductor refrigeration piece 9;

it should be noted that the right side of the semiconductor refrigeration piece 9 is the heat absorption end 901, and when the semiconductor refrigeration piece 9 is opened, the right side absorbs heat, even if the ambient temperature drops, the cooling purpose is realized, and the left side of the semiconductor refrigeration piece 9 is the heat release end 902, so that the heat can be conveniently discharged from the left side, the heat is effectively prevented from contacting the power board assembly 1 in a short distance, and finally, the active heat dissipation effect is realized.

Claims

1. The utility model provides a heat radiation structure of parallelly connected MOSFET power board, its characterized in that includes power board subassembly and radiator unit, the power board subassembly by power board body, thermal-insulated board, dodge the hole and lead the warm bolt and constitute, radiator unit constitute by leading antithetical couplet piece, conduction piece and semiconductor refrigeration piece, radiator unit set firmly in power board subassembly left side, the thermal-insulated board set firmly in power board body left side, dodge the hole and be located power board body and thermal-insulated inboard inside, lead warm bolt quantity be a plurality of, lead the warm bolt and evenly set firmly both ends around this internal portion of power board, the piece of leading be located the thermal-insulated board left side, the conduction piece set firmly both ends around the piece right side of leading, semiconductor refrigeration piece set firmly in the inside left side of piece of leading.

2. The heat dissipating structure of a parallel MOSFET power board as claimed in claim 1, wherein the power board body further has a mounting hole therein, and the power board body further has a flow-through cavity therein.

3. The heat dissipation structure of claim 1, wherein the heat insulation plate has screw grooves at the front and back ends of the left side, and limiting plates are fixed at the upper and lower ends of the heat insulation plate.

4. The heat dissipating structure of a parallel MOSFET power board as claimed in claim 3, wherein fastening bolts are further inserted through the front and rear ends of the inside of the lead block, and the fastening bolts and the screw grooves are connected by internal and external threads.

5. The heat dissipating structure of claim 1, wherein the right side of the semiconductor chilling plate is a heat absorbing end, and the left side of the semiconductor chilling plate is a heat releasing end.