CN212627728U

CN212627728U - Intelligent power module

Info

Publication number: CN212627728U
Application number: CN202021619176.2U
Authority: CN
Inventors: 冯锴雄; 杨忠添
Original assignee: Guangdong Huixin Semiconductor Co Ltd
Current assignee: Guangdong Huixin Semiconductor Co Ltd
Priority date: 2020-08-06
Filing date: 2020-08-06
Publication date: 2021-02-26
Anticipated expiration: 2030-08-06

Abstract

The application discloses an intelligent power module, which is characterized by comprising a substrate; a driving chip disposed on the substrate; the inverter unit is arranged on the substrate and comprises at least two groups of inversion modules, each group of inversion modules comprises two tripolar transistors, the drain electrode of one tripolar transistor is connected with the high-voltage input end on the substrate, the source electrode of the tripolar transistor is connected with the drain electrode of the other tripolar transistor, the source electrode of the other tripolar transistor is connected with the low-voltage reference end on the substrate, and the grid electrodes of the two tripolar transistors are connected with the driving chip; one end of each output line is connected with the source electrode of the upper bridge arm of each group of inversion modules, and the other end of each output line is connected with the output end on the substrate; and the current detection coils penetrate through the output line and are connected with the driving chip.

Description

Intelligent power module

Technical Field

The present application relates to the field of integrated circuits, and more particularly, to an intelligent power module.

Background

An Intelligent Power Module, i.e. an IPM (Intelligent Power Module, abbreviated as IPM), is an advanced Power switch device, which is integrated with logic, control, detection and protection circuits, and is widely applied to frequency converters of driving motors and various inverter Power supplies, and is an ideal Power electronic device for variable frequency speed regulation, metallurgical machinery, electric traction, servo drive and variable frequency household appliances. The intelligent power module is used as a core component of motor drive, the current value of the intelligent power module is a vital parameter, and the intelligent power module is damaged when the current is too large, so that overcurrent protection needs to be carried out on the intelligent power module.

While the over-current protection of the smart power module requires first detecting the current flowing through the module. In the prior art, a current sampling circuit is generally designed at the periphery of an intelligent power module to detect the current of the intelligent power module, but the circuit detection method has the following problems: the current sampling circuit is independent from the intelligent power module, and is likely to be interfered by the outside, so that the module stops working due to the conditions of false triggering and the like, and the current sampling circuit has poor reliability and poor usability; and when the local current of the module is too large, the device cannot be protected.

Accordingly, the prior art is yet to be improved and developed.

SUMMERY OF THE UTILITY MODEL

In view of the above-mentioned shortcomings of the prior art, an object of the present application is to provide an intelligent power module, which aims to solve the problems of poor reliability and poor usability of the current detection method of the current sampling circuit designed on the periphery of the existing intelligent power module.

The technical scheme of the application is as follows:

a smart power module, comprising:

a substrate;

the driving chip is arranged on the substrate;

the inverter unit is arranged on the substrate and comprises at least two groups of inversion modules, each group of inversion modules comprises two tripolar transistors, the drain electrode of one tripolar transistor is connected with the high-voltage input end on the substrate, the source electrode of the tripolar transistor is connected with the drain electrode of the other tripolar transistor, the source electrode of the other tripolar transistor is connected with the low-voltage reference end on the substrate, and the grid electrodes of the two tripolar transistors are connected with the driving chip;

one end of each output line is connected with the source electrode of the upper bridge arm of each group of inversion modules, and the other end of each output line is connected with the output end of the substrate;

and the current detection coils penetrate through the output wire and are connected with the driving chip.

The intelligent power module is characterized in that an overcurrent protection circuit is arranged in the driving chip and connected with the current detection coil, and the overcurrent protection circuit is used for stopping working when the current collected by the current detection coil exceeds a set threshold value.

The intelligent power module, wherein,

the driver chip comprises a VSS port, a high side output port with and only HO1 port and HO2 port, and a low side output port with and only LO1 port and LO2 port;

the inverter unit is provided with only a first group of inversion modules and a second group of inversion modules, the first group of inversion modules comprise a first three-pole transistor and a second three-pole transistor, and the second group of inversion modules comprise a third three-pole transistor and a fourth three-pole transistor; the gate of the first triode transistor is connected with the HO1 port, the gate of the second triode transistor is connected with the LO1 port, the gate of the third triode transistor is connected with the HO2 port, and the gate of the fourth triode transistor is connected with the LO2 port.

The intelligent power module further comprises a first bootstrap capacitor;

the driving chip further comprises a VB1 port and a VS1 port; the VB1 port is connected with the VS1 port through the first bootstrap capacitor.

The intelligent power module further comprises a second bootstrap capacitor;

the driving chip further comprises a VB2 port and a VS2 port; the VB2 port is connected with the VS2 port through a second bootstrap capacitor.

The intelligent power module is characterized in that the triode transistor is one of an IGBT transistor, a reverse conducting type IGBT transistor or an MOSFET transistor.

In the intelligent power module, the three-pole transistors are all IGBT transistors;

each IGBT transistor is connected with a fast recovery diode, the anode of each fast recovery diode is connected with the source electrode of the IGBT transistor, and the cathode of each fast recovery diode is connected with the drain electrode of the IGBT transistor.

The intelligent power module is characterized in that the grid electrode of each triode transistor is connected with a grid electrode driving resistor, and the grid electrode driving resistor is arranged in the driving chip.

The intelligent power module is characterized in that an over-temperature protection switch is further arranged in the driving chip.

The intelligent power module is characterized in that an overvoltage protection switch is further arranged in the driving chip.

Has the advantages that: the application provides an intelligent power module, intelligent power module has the electric current at module internal integration and surveys the coil, detects the electric current of circuit, and the mistake that reducible external disturbance caused is turn-offed, improves the reliability and the ease for use of module, compares prior art and has simplified the structure of module, and the reliability is high, has reduced user's design cost moreover, and is effectual.

Drawings

Fig. 1 is a schematic diagram of an intelligent power module according to an embodiment of the present application.

Fig. 2 is a comparison graph of signal interference suffered by a current detection coil of an intelligent power module according to an embodiment of the present invention and a conventional circuit sampling circuit.

Fig. 3 is a schematic structural diagram of an intelligent power module according to an embodiment of the present application.

Fig. 4 is a schematic diagram of a driving chip of an intelligent power module in the embodiment shown in fig. 3.

Detailed Description

The technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the drawings in the embodiments of the present application.

In the description of the present application, it should be noted that the terms "inside", "outside", and the like indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings or orientations or positional relationships that the products of the application usually place when using, and are only used for convenience in describing the present application and simplifying the description, but do not indicate or imply that the devices or elements that are referred to must have a specific orientation, be constructed in a specific orientation, and operate, and thus, should not be construed as limiting the present application. Furthermore, the terms "first," "second," and the like are used merely to distinguish one description from another, and are not to be construed as indicating or implying relative importance.

It should also be noted that, unless expressly stated or limited otherwise, the terms "disposed" and "connected" are to be construed broadly, e.g., as meaning fixedly connected, detachably connected, or integrally connected; they may be connected directly or indirectly through intervening media, or they may be interconnected between two elements. The specific meaning of the above terms in the present application can be understood in a specific case by those of ordinary skill in the art.

Referring to fig. 1, fig. 1 is a schematic diagram of an intelligent power module in some embodiments of the present application, and it should be noted that the outer frame line 88 in fig. 1 is only a packaging schematic line of the intelligent power module in the embodiments of the present application, and does not refer to a connection line of each component or each pin in the intelligent power module in the embodiments of the present application. This intelligent power module includes: a substrate 1; a driving chip 2 disposed on the substrate 1; the inverter unit 3 is arranged on the substrate 1, the inverter unit 3 comprises at least two groups of inverter modules, each group of inverter modules comprises two tripolar transistors, and the two tripolar transistors are divided into a tripolar transistor 31 of an upper bridge arm and a tripolar transistor 32 of a lower bridge arm, wherein the drain electrode of the tripolar transistor 31 of the upper bridge arm is connected with the high-voltage input end on the substrate 1, the source electrode of the tripolar transistor 31 of the upper bridge arm is connected with the drain electrode of the tripolar transistor 32 of the lower bridge arm, the source electrode of the tripolar transistor 32 of the lower bridge arm is connected with the low-voltage reference end on the substrate 1, and the grid electrodes of the two; at least two output lines 4, wherein one end of each output line 4 is connected with the source electrode of the triode transistor 31 of the upper bridge arm, and the other end of each output line 4 is connected with the output end on the substrate 1; at least two current detection coils 5, current detection coil 5 wears to locate on output line 4 to be connected with drive chip 2.

In the embodiment shown in fig. 1, the inverter unit 3 includes three groups of inverter modules, namely a first group of inverter units B1, a second group of inverter units B2 and a third group of inverter units B3, which are suitable for a high-power motor load having three interfaces. It should be noted that point P is a high-voltage input end of the intelligent power module in the embodiment of the present application, and points U, V, and W are three-phase output ends of the intelligent power module in the embodiment of the present application, and the three-phase output ends are used for being connected with a motor load. The UN point, VN point and WN point are emitter output ends of the triode transistor 32 of the lower bridge arm of the three sets of inverter modules, respectively, and the three emitter output ends may be connected to the low voltage reference end of the substrate 1 or the ground end of the external circuit.

It should be noted that an overcurrent protection circuit is provided in the driving chip 2, and the overcurrent protection circuit is connected to the current detection coil 5. In the embodiment shown in fig. 1, the output lines 4 correspond to 3 lines, and the number of the current detection coils 5 also corresponds to 3 lines, wherein the three current detection coils 5 respectively monitor the currents at the three-phase output ends in real time by using the electromagnetic induction principle, and feed back the currents to the driving chip 2. When the monitored current exceeds the set threshold value, the driving chip 2 drives the overcurrent protection circuit, 6 triode transistors of the inverter unit are immediately turned off, and the work of the device is stopped, so that the device is prevented from being burnt.

Preferably, please refer to fig. 3, fig. 3 is a circuit diagram of an intelligent power module in some embodiments of the present application, and the embodiment in fig. 3 is a preferred embodiment of the present application. It should be noted that the outer frame wire 88 in fig. 3 is only a packaging schematic wire of the smart power module of the embodiment of the present application, and does not refer to a connection wire of each component or each pin in the smart power module of the embodiment of the present application. In the intelligent power module, the driver chip 2 comprises a VSS port, a high-side output port and a low-side output port, wherein the high-side output port is only provided with an HO1 port and an HO2 port, and the low-side output port is only provided with an LO1 port and an LO2 port; the inverter unit has and only has a first group of inverting modules a1 and a second group of inverting modules a2, wherein the first group of inverting modules a1 includes a first three-pole transistor 20 and a second three-pole transistor 30, and the second group of inverting modules a2 includes a third three-pole transistor 40 and a fourth three-pole transistor 50; the gate of the first triode transistor 20 is connected to the port HO1, the gate of the second triode transistor 30 is connected to the port LO1, the gate of the third triode transistor 40 is connected to the port HO2, and the gate of the fourth triode transistor 50 is connected to the port LO 2. In practical applications, the HO1 port, the HO2 port, the LO1 port, and the LO2 port correspond to control signal inputs of the first three-pole transistor 20, the second three-pole transistor 30, the third three-pole transistor 40, and the fourth three-pole transistor 50, respectively.

It should be noted that, in the embodiment shown in fig. 3, point a is a first output end a of the smart power module according to the embodiment of the present application, point B is a second output end B of the smart power module according to the embodiment of the present application, and point N is a low-voltage reference end of the smart power module according to the embodiment of the present application. The first output terminal a and the second output terminal B are interfaces of the motor load, and the point N is connected to the sources of the second three-pole transistor 30 and the fourth three-pole transistor 50.

In the embodiment shown in fig. 3, the driving chip 2 further includes a VCC port, a HIN1 port, a HIN2 port, an LIN1 port, and a LIN2 port, and the VCC port, the HIN1 port, the HIN2 port, the LIN1 port, and the LIN2 port respectively lead out a VCC pin, a HIN1 pin, a HIN2 pin, an LIN1 pin, and a LIN2 pin as the entire smart power module. And a VSS pin which is used as the whole intelligent power module is led out from the VSS port. The VCC pin, the VSS pin, the HIN1 pin, the HIN2 pin, the LIN1 pin and the LIN2 pin are all connected with the MCU and used for receiving corresponding control signals given by the MCU. The VCC pin is a power signal terminal of the driver chip 2, and the VSS pin is a common ground terminal of the intelligent power module. In practical applications, the voltage between the VCC pin and the VSS pin is generally set to 15V, and of course, the voltage at this point may be set according to practical needs, and is not limited herein.

It should be noted that, referring to fig. 4, fig. 4 is a schematic diagram of the driving chip 2 of the intelligent power module in the embodiment shown in fig. 3. The VCC pin of the intelligent power module is connected with the power circuit inside the driving chip 2 through the VCC port of the driving chip 2, and provides a working power supply for the driving chip 2. A pin HIN1 of the intelligent power module is connected to a first high-side driving circuit inside the driving chip 2 through a HIN1 port of the driving chip 2, and outputs a control signal through an HO1 port of the driving chip 2 to determine the on-off of the first triode transistor 20; a pin HIN2 of the intelligent power module is connected with a second high-side driving circuit inside the driving chip 2 through a HIN2 port of the driving chip 2, and outputs a control signal through an HO2 port of the driving chip 2 to determine the on-off of the third triode transistor 40; the LIN1 pin of the intelligent power module is connected with a first low-side driver circuit inside the driver chip 2 through the LIN1 port of the driver chip 2, and outputs a control signal through the LO1 port of the driver chip 2 to determine the on-off of the second triode transistor 30; the LIN2 pin of the smart power module is connected to the second low-side driver circuit inside the driver chip 2 through the LIN2 port of the driver chip 2, and outputs a control signal through the LO2 port of the driver chip 2 to determine the on/off of the fourth triode transistor 50. Among them, the HIN1 pin, the HIN2 pin, the LIN1 pin, and the LIN2 pin of the smart power module receive input signals of 0V or 5V. Of course, the input signal with other voltage amplitudes may be received according to actual needs, and the selection is specifically performed according to the actual device connected to the circuit.

It should be further explained that a power under-voltage protection circuit is further disposed inside the driving chip 2, and is connected to the power circuit to protect the intelligent power module and the device. And the two high-side driving circuits are also connected with a high-side undervoltage protection circuit to protect the intelligent power module and the device.

Wherein, the first triode transistor 20 and the second triode transistor 30 in the first group of inversion modules a1 can only be alternatively conducted; the third triode transistor 40 and the fourth triode transistor 50 in the second group of inverting modules a2 can only be turned on alternatively. Thus, the first and

fourth triode transistors

20 and 50 constitute a set of paths, driven by the same set of signals, turned on/off at the same time; the third triode transistor 40 and the second triode transistor 30 constitute another set of channels, driven by the same set of signals, turned on/off at the same time.

In addition, correspondingly, an interlock and dead zone circuit is respectively arranged between the first high-side driving circuit and the first low-side driving circuit and between the second high-side driving circuit and the second low-side driving circuit in the driving chip 2, so that two triode transistors in the inverter module can only be selectively conducted to prevent short circuit.

Further, in the embodiment shown in fig. 3, the smart power module further includes a first bootstrap capacitor 101 and a second bootstrap capacitor 102. The driver chip 2 further includes a VB1 port and a VS1 port, a VB2 port and a VS2 port. The VB1 port is connected with the VS1 port through the first bootstrap capacitor 101. The VB2 port is connected with the VS2 port through the second bootstrap capacitor 102. The port VB1 is the positive end of the power supply of the first bootstrap capacitor 101, and the port VS1 is the negative end of the power supply of the first bootstrap capacitor 101; the VB2 port is the positive power supply terminal of the second bootstrap capacitor 102, and the VS2 port is the negative power supply terminal of the second bootstrap capacitor 102. The first bootstrap capacitor 101 and the second bootstrap capacitor 102 are used for storing energy and supplying power (or boosting voltage) to provide boosting voltage for the power supply of the driver chip 2. The intelligent power module further comprises two bootstrap diodes, a VCC port of the driving chip 2 is connected with anodes of the two bootstrap diodes through the power supply circuit, cathodes of the two bootstrap diodes are correspondingly connected with the first bootstrap capacitor 101 and the second bootstrap capacitor 102 through a VB1 port and a VB2 port respectively, and the bootstrap diodes are used for rectifying and preventing current from flowing backwards so as to protect the power supply circuit.

In the embodiment shown in fig. 3, the intelligent power module further includes two current detection coils 5, and the two current detection coils 5 are respectively disposed on the output lines connected to the first output end a and the second output end B in a penetrating manner, and respectively monitor the currents at the output ends of the two inversion modules. Further, the driver chip 2 is provided with an ITRIP port, an ITRIP pin serving as an intelligent power module is led out from the ITRIP port, and the ITRIP pin of the intelligent power module is an overcurrent protection terminal. When the current detection coil 5 detects the current of the output end of the intelligent power module, the signal is fed back to the MCU through the ITRIP end of the intelligent power module, the MCU compares the current with a set current threshold value, if the current exceeds the set threshold value, the corresponding control signal is input through the ITRIP end, the overcurrent protection circuit is controlled to stop the work of the driving chip 2, then the work of the intelligent power module is stopped, and the device is protected.

Of course, it is understood that, in some embodiments, an over-temperature protection switch, an over-voltage protection switch, an enable protection switch, an error reporting circuit, and the like are further disposed in the driving chip 2. Aiming at an over-temperature protection switch, an overvoltage protection switch, an enable protection switch and an error reporting circuit, a driving chip 2 is correspondingly provided with a VTS port, an OV port, an EN port and an FO port, the VTS port, the EN port and the FO port are also connected with an MCU chip through a universal I/O interface and correspondingly receive or feed back corresponding signals to the MCU chip, the OV port is connected with a high-voltage input end P point, whether the voltage of the high-voltage input end P point exceeds a set threshold value or not is detected, and devices are included. Wherein, the overtemperature protection switch is a positive temperature coefficient temperature protection switch. In addition, the FO port of driver chip 2 is internally pulled up to the VCC port through a resistor.

In practical applications, all existing intelligent power modules are designed for three-interface high-power motor loads, so that the intelligent power module is provided with a plurality of structures shown in fig. 1: when the intelligent power module is applied to a low-power motor, two driving circuits of the three-phase full-bridge driving chip are wasted, or only two separated half-bridge driving chips +4 three-pole transistors can be adopted to realize a single-phase full-bridge circuit, but each half-bridge driving chip needs to be provided with protection circuits such as undervoltage, overcurrent, enabling, error reporting and the like, so that the protection circuits can be repeatedly wasted, and the area of the module can be wasted; in addition, each chip requires a scribe line, a sealing (i.e., a seal ring) or other non-functional region, and the more chips, the larger the non-functional region is, the more effective chip area cannot be realized. In the embodiments of fig. 3 and 4 of the present application, the intelligent power module controls a single-phase full bridge circuit formed by two sets of three-pole transistors by using a single driving chip 2, and is directly applicable to a low-power motor load with two interfaces without waste, and the single driving chip integrates four driving circuits, an enabling circuit, an under-voltage protection circuit, an over-current protection circuit, an over-voltage protection circuit, an over-temperature protection circuit, an error reporting circuit, and other functional circuits, and a bootstrap circuit, and further integrates functions of three-pole transistors, a bootstrap capacitor, and a current detection coil 5 to complete an IPM circuit, so as to realize a single-phase full bridge IPM complete function, and does not need a bootstrap capacitor, a current sampling circuit, and the like, so as to most effectively utilize the area of the chip, not to cause a protection function repetitive design, to minimize the occupied area ratio of a scribing lane, a SEALRING, and improve the space utilization ratio, the usability and reliability of the module are improved.

In some embodiments, the three-pole transistor of the intelligent power module of the integrated control chip of the embodiments of the present application is one of an IGBT transistor, a reverse conducting IGBT transistor, or a MOSFET transistor.

In the embodiment shown in fig. 1 and 3, the triode transistors are both IGBT transistors. Each IGBT transistor is connected with a fast recovery diode, the anode of each fast recovery diode is connected with the source electrode of the IGBT transistor, and the cathode of each fast recovery diode is connected with the drain electrode of the IGBT transistor. If the triode transistors are all reverse conducting IGBT transistors or MOSFET transistors, the fast recovery diodes can not be connected in parallel.

Further, in some embodiments, the gate of each triode transistor is connected to a gate driving resistor, which is disposed inside the driving chip 2 and used for preventing the driving current from being excessively large instantaneously to generate oscillation. The current detection circuit is integrated in the module, so that the using method of the module is simplified, and a user does not need to access the current detection circuit on the periphery when applying the module, so that the design cost of the user is reduced; and as shown in fig. 2, fig. 2 is a graph comparing the current detection coil of the smart power module according to some embodiments of the present application with the signal interference of the conventional circuit sampling circuit. Therefore, the intelligent power module of the embodiment of the application can reduce error turn-off caused by external interference. As shown in fig. 2, when external interference exists, a large peak may be generated by the conventional external current detection circuit, the driving chip turns off the inverter unit after receiving the signal, and thus the driving chip is turned off by mistake, and the current detection coil closer to the device is only disturbed by a small amount, which indicates that the actual current is still in the safe working range of the device, and the driving chip continues to work normally, thereby preventing false triggering. In addition, because an external current detection circuit is not needed, the intelligent power module has faster over-current protection action time, the existing over-current protection action time needs more than 10 microseconds, and the over-current protection action time of the embodiment of the application can be shortened to be within 5 microseconds and is smaller than the short-circuit tolerance of a common IGBT tube, so that the intelligent power module can be better protected. The current detection circuit generally adopts at least one sampling resistor to collect current, the sampling resistor needs to be connected into the circuit, the sampling resistor has a voltage division effect, power consumption and heat can be generated, and the heat dissipation burden of a device is increased. Therefore, compare prior art, the intelligent power module of this application embodiment simple structure, the stable function, it is effectual with low costs moreover.

It should be understood that the application of the present application is not limited to the above examples, and that modifications or changes may be made by those skilled in the art based on the above description, and all such modifications and changes are intended to fall within the scope of the appended claims.

Claims

1. A smart power module, comprising:

a substrate;

the driving chip is arranged on the substrate;

2. The intelligent power module according to claim 1, wherein an overcurrent protection circuit is disposed in the driving chip, and the overcurrent protection circuit is connected to the current detection coil and is configured to stop working when the current collected by the current detection coil exceeds a set threshold.

3. The smart power module of claim 1,

4. The smart power module of claim 3 further comprising a first bootstrap capacitor;

5. The smart power module of claim 4 further comprising a second bootstrap capacitor;

6. The smart power module of claim 1, wherein the triode transistor is one of an IGBT transistor, a reverse conducting IGBT transistor, or a MOSFET transistor.

7. The smart power module of claim 1 wherein the tri-polar transistors are all IGBT transistors;

8. The intelligent power module as claimed in claim 1, wherein the gate of each triode transistor is connected with a gate driving resistor, and the gate driving resistor is arranged inside the driving chip.

9. The smart power module of claim 1, wherein an over-temperature protection switch is further disposed within the driving chip.

10. The smart power module of claim 1 wherein an over-voltage protection switch is further disposed within the driver chip.