CN212570988U - Spliced IGBT substrate - Google Patents

Spliced IGBT substrate Download PDF

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Publication number
CN212570988U
CN212570988U CN202021588558.3U CN202021588558U CN212570988U CN 212570988 U CN212570988 U CN 212570988U CN 202021588558 U CN202021588558 U CN 202021588558U CN 212570988 U CN212570988 U CN 212570988U
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China
Prior art keywords
igbt
substrate
base plate
base block
base
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CN202021588558.3U
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Chinese (zh)
Inventor
邓泽龙
冯小平
许新星
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Suzhou Guishi Technology Co ltd
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Suzhou Guishi Technology Co ltd
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Abstract

The utility model discloses a splicing type IGBT substrate, which comprises a substrate and IGBT base blocks, wherein the IGBT base blocks are equidistantly arranged on the top of the substrate, the substrate comprises a substrate body, a mounting hole, a heat dissipation port and a base block connecting column, the substrate body is a main body of the substrate, the mounting hole is equidistantly arranged on the position close to the top on the front side of the substrate body, the position close to the center on the front side of the substrate body is equidistantly provided with the heat dissipation port, the base block connecting column is equidistantly arranged in the middle of the front side of the substrate body, through the matching between the substrate and the IGBT base blocks, the effect of splicing and disassembling is achieved, the problem that the traditional welding is inconvenient to disassemble and splice is solved, through the matching between the substrate and the connecting columns, the effect that the installation is convenient for batch production is achieved, the problem that the traditional assembly efficiency is low is solved, through, the effect that the radiating efficiency is high is achieved, and the problem that the radiating efficiency is low in the past is solved.

Description

Spliced IGBT substrate
Technical Field
The utility model relates to a power electronic technology field specifically is a concatenation formula IGBT base plate.
Background
The substrate made of the novel high-thermal-conductivity composite material of aluminum silicon carbide is high in thermal conductivity up to 200W/(m.K), the expansion coefficient can be adjusted by the volume fraction (50-80%) of silicon carbide, and the novel high-thermal-conductivity composite material has the advantages of small density, light weight, high bending strength and the like, is a new material which is preferably adopted in the fields of aerospace, power devices, high-speed rails, microwaves and the like, most of preparation methods in the current market adopt a welding method to connect a chip and the substrate, the IGBT substrate prepared by the method has poor combination effect, and a few chips are established on the aluminum silicon carbide substrate in a film coating mode, but only one chip is established, so that the utilization efficiency of the substrate is greatly reduced, the waste of resources is caused, an IPM (intelligent power module) is widely applied to a variable frequency air conditioner, the novel high-reliability, the use is convenient and the like, and the novel high-thermal-conductivity composite, the IPM packaging structure is widely applied to the fields of variable frequency speed regulation, metallurgical machinery, electric traction, servo drive, variable frequency household appliances and the like, is an ideal power electronic, but because manufacturers usually adopt self-defined packaging modes when packaging IPMs, and the IPM specifications packaged by various manufacturers are different, different IPM modules need to be supported by corresponding drive circuits and PCB boards, so that the IPMs of various specifications cannot be compatible with each other, in order to break through the stiff office, 6 discrete IGBTs (insulated gate bipolar transistors) can be adopted to replace the IPM modules, because each IGBT manufacturer packages the IGBTs according to international standards, the provided IGBT specifications are unified, the compatibility problem of the IGBTs can be well solved, but the traditional assembly mode needs to respectively install the 6 discrete IGBTs, the assembly efficiency is low, and in addition, an insulating material between the IGBTs and a radiator metal plate, it is difficult to ensure insulation and heat dissipation effects between the IGBT and the metal plate at the same time.
SUMMERY OF THE UTILITY MODEL
An object of the utility model is to provide a concatenation formula IGBT base plate to solve the problem that proposes among the above-mentioned background art.
In order to achieve the above object, the utility model provides a following technical scheme: the spliced IGBT substrate comprises a substrate and IGBT base blocks, wherein the IGBT base blocks are arranged on the top of the substrate at equal intervals, and the IGBT base blocks are arranged on the top of the substrate at equal intervals.
Preferably, the base plate includes base plate body, mounting hole, thermovent and base block spliced pole, the base plate body is the main part of base plate, the equidistant position of seting up at the base plate body openly near the top of mounting hole, the thermovent has been seted up to the positive position equidistance near the center of base plate body, the equidistant setting of base block spliced pole is at the positive middle part of base plate body.
Preferably, the IGBT base block comprises an IGBT base block body and a base block connecting seat, the IGBT base block body is a main body of the IGBT base block, the base block connecting seat is arranged on the outer side of the front face of the IGBT base block body at equal intervals, the IGBT base block body is of a modular structure and can be replaced and spliced according to different requirements, and the IGBT base block is convenient to use and detach.
Preferably, be connected through basic spliced pole electricity between the base plate body and the IGBT base block body, and adopt and to splice detachable buckle formula structure, the front equidistance of base plate body is seted up flutedly, and is convenient for install and replace, the recess includes the pin groove, set up in by the recess, place IGBT's pin.
Preferably, the through-hole that mounting hole and screw match, mounting screw make the base plate be fixed in on the radiator metal sheet, equidistant division spraying area on the base plate body, and the spraying area is matrix structure and arranges, wherein has set gradually Al2O 3-3% TiO2 cladding material and copper coating on every spraying area.
Preferably, the base body and the groove are integrally formed.
Compared with the prior art, the beneficial effects of the utility model are that:
1. this base plate through cooperation between base plate and the IGBT base block, has reached the detachable effect that can splice, has solved the inconvenient dismantlement of welding back and the problem of concatenation in the past.
2. This base plate through the cooperation between base plate and the spliced pole, has reached simple to operate's the effect of the batch production of being convenient for, has solved the problem that assembly efficiency is low in the past.
3. This base plate, through cooperation between thermovent and the IGBT base block, has reached the effect that the radiating efficiency is high, has solved the problem that radiating efficiency is low in the past.
4. The substrate achieves the leveling effect when each element is mounted through the matching between the substrate and the substrate body, and solves the problem of unevenness in the past mounting.
5. This base plate through the cooperation between the base plate body, has reached the division and has improved the joint degree between chip and the base plate, and this base plate structure is effectual has improved the availability factor, makes the cohesion of IGBT base plate higher simultaneously, and the effectual manufacturing cost that has practiced thrift is produced portably.
6. The substrate achieves the effect of compatibility and convenient replacement through the cooperation between the IGBT base block modules, and solves the problem that the prior substrate is poor in compatibility and cannot be replaced.
7. The substrate is simple, durable and reliable, adopts an Alsic composite material and a cold spraying process, has the characteristics of small environmental pollution, low cost, high efficiency, strong process stability, excellent welding performance and the like, and has no foaming and shedding phenomena after a neutral salt spray test and a high-temperature screening test.
Drawings
FIG. 1 is a schematic structural view of the present invention;
FIG. 2 is a front view of the structure of the present invention;
fig. 3 is a side view of the structure of the present invention.
In the figure: 1 base plate, 2IGBT base block, 101 base plate body, 102 mounting hole, 103 thermovent, 104 base block spliced pole, 201IGBT base block body, 202 base block connecting seat.
Detailed Description
The technical solutions in the embodiments of the present invention will be described clearly and completely with reference to the accompanying drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only some embodiments of the present invention, not all embodiments. Based on the embodiments in the present invention, all other embodiments obtained by a person skilled in the art without creative work belong to the protection scope of the present invention.
Referring to fig. 1-3, the present invention provides a technical solution: a spliced IGBT substrate comprises a substrate 1 and IGBT base blocks 2, the IGBT base blocks 2 are equidistantly arranged on the top of the substrate 1, the substrate 1 comprises a substrate body 101, mounting holes 102, heat dissipation ports 103 and base block connecting columns 104, the substrate body 101 is a main body of the substrate 1, the mounting holes 102 are equidistantly arranged on the front surface of the substrate body 101 close to the top, the front surface of the substrate body 101 close to the center is equidistantly provided with the heat dissipation ports 103, the base block connecting columns 104 are equidistantly arranged on the middle part of the front surface of the substrate body 101, the IGBT base blocks 2 comprise IGBT base block bodies 201 and base block connecting seats 202, the IGBT base block bodies 201 are main bodies of the IGBT base blocks, the base block connecting seats 202 are equidistantly arranged on the outer sides of the front surfaces of the IGBT base block bodies 201, the IGBT base block bodies 201 are of a modular structure, replacement and splicing can be carried out according to different requirements, and the, be connected through basic spliced pole 104 electricity between the base plate body 101 and the IGBT base block body 201, and adopt and to splice detachable buckle formula structure, the positive equidistance of base plate body 101 has seted up flutedly, and is convenient for install and replacement, and the recess includes the pin groove, set up in by the recess, place the pin of IGBT, the through-hole that mounting hole 102 and screw match, mounting screw makes on base plate 1 is fixed in the radiator metal sheet, equidistant division spraying area on base plate body 101, and the spraying area is the matrix structure and arranges, wherein has set gradually Al2O 3-3% TiO2 cladding material and copper coating on every spraying area, base plate body 101 and recess are integrated into one piece.
The working principle is as follows: the basic structure is reasonable in design, installation and replacement maintenance are convenient, firstly, the installation process is carried out, a substrate 1 and IGBT base blocks 2 are arranged on the top of the substrate 1 at equal intervals, the use process is carried out after the installation, spraying areas are equidistantly divided on a substrate body 101 and are arranged in a matrix structure, wherein an Al2O 3-3% TiO2 coating and a copper coating are sequentially arranged on each spraying area, the substrate is made of ceramic, the insulation performance and the heat dissipation performance are good, the shape of a groove is consistent with that of the IGBT, the effect of positioning the IGBT can be achieved, the IGBT is placed in the groove during assembly, packaging can be completed, a module group, namely a discrete IGBT module group is formed, heat conducting paste is coated between the groove and the IGBT, heat conduction to the equidistant substrate is facilitated, and the heat dissipation is assisted by a radiator arranged on the substrate body 101, the heat dissipation effect is good, in order to ensure that the discrete IGBT module group is well fixed on the metal plate of the radiator, the connecting column is firstly fixed on the metal plate of the radiator to form a mounting column, and will pass through the substrate body 101 to complete the fixation of the substrate body 101 and the IGBT substrate block, the installation mode avoids respectively fixing a plurality of IGBTs, has higher installation speed and higher assembly efficiency, can meet the mass production, the screw hole is only contacted with the insulated substrate and is not contacted with the IGBT, can avoid the connection between the metal part of the IGBT and the metal plate of the radiator caused by the conductive performance of the screw, better improves the insulation, the substrate is simple, durable and reliable, adopts an Alsic composite material and a cold spraying process, has the characteristics of small environmental pollution, low cost, high efficiency, strong process stability, excellent welding performance and the like, and has no foaming and shedding phenomena after a neutral salt spray test and a high-temperature screening test.
Although embodiments of the present invention have been shown and described, it will be appreciated by those skilled in the art that changes, modifications, substitutions and alterations can be made in these embodiments without departing from the principles and spirit of the invention, the scope of which is defined in the appended claims and their equivalents.

Claims (6)

1. The utility model provides a concatenation formula IGBT base plate, includes base plate (1) and IGBT base block (2), its characterized in that: the IGBT base blocks (2) are arranged on the top of the substrate (1) at equal intervals, and the IGBT base blocks (2) are arranged on the top of the substrate (1) at equal intervals.
2. The tiled IGBT substrate according to claim 1, wherein: base plate (1) includes base plate body (101), mounting hole (102), thermovent (103) and base block spliced pole (104), base plate body (101) is the main part of base plate (1), the equidistant position of establishing near the top in base plate body (101) front of mounting hole (102), thermovent (103) have been seted up to base plate body (101) front near the position equidistance at center, the equidistant setting of base block spliced pole (104) is at the positive middle part of base plate body (101).
3. The tiled IGBT substrate according to claim 1, wherein: IGBT base block (2) are including IGBT base block body (201) and base block connecting seat (202), IGBT base block body (201) is the main part of IGBT base block, the setting of base block connecting seat (202) equidistance is in the positive outside of IGBT base block body (201), IGBT base block body (201) is a modular structure.
4. The tiled IGBT substrate according to claim 2, wherein: the IGBT substrate is characterized in that the substrate body (101) is electrically connected with the IGBT substrate body (201) through the substrate connecting column (104), a detachable buckle type structure capable of being spliced is adopted, and grooves are formed in the front face of the substrate body (101) at equal intervals.
5. The tiled IGBT substrate according to claim 2, wherein: through-hole that mounting hole (102) and screw match, mounting screw make base plate (1) be fixed in on the radiator metal sheet, the equidistant partition spraying area of base plate body (101), and the spraying area is matrix structure and arranges, wherein has set gradually Al2O 3-3% TiO2 cladding material and copper coating on every spraying area.
6. The tiled IGBT substrate according to claim 4, wherein: the substrate body (101) and the groove are integrally formed.
CN202021588558.3U 2020-08-04 2020-08-04 Spliced IGBT substrate Active CN212570988U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202021588558.3U CN212570988U (en) 2020-08-04 2020-08-04 Spliced IGBT substrate

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN202021588558.3U CN212570988U (en) 2020-08-04 2020-08-04 Spliced IGBT substrate

Publications (1)

Publication Number Publication Date
CN212570988U true CN212570988U (en) 2021-02-19

Family

ID=74627857

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202021588558.3U Active CN212570988U (en) 2020-08-04 2020-08-04 Spliced IGBT substrate

Country Status (1)

Country Link
CN (1) CN212570988U (en)

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Date Code Title Description
GR01 Patent grant
GR01 Patent grant
PE01 Entry into force of the registration of the contract for pledge of patent right
PE01 Entry into force of the registration of the contract for pledge of patent right

Denomination of utility model: A spliced IGBT substrate

Effective date of registration: 20230203

Granted publication date: 20210219

Pledgee: Suzhou high tech Industrial Development Zone sub branch of Bank of Communications Co.,Ltd.

Pledgor: Suzhou Guishi Technology Co.,Ltd.

Registration number: Y2023320010078